EDC

50+ Most Expected

Question (Part-3)
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50+ Most Expected Question (Part-3)
50+ Most Expected Question (Part-3)
Q. The avalanche diode regulates at 50 V over a range of
diode currents from 5 to 40 mA. The supply voltage V
= 200 V. Calculate R to allow voltage regulation from
a load current IL = 0 up to Imax, the maximum possible
value of IL. What is Imax?
50+ Most Expected Question (Part-3)
50+ Most Expected Question (Part-3)
50+ Most Expected Question (Part-3)
50+ Most Expected Question (Part-3)

Q. The CE transistor used in the circuit

shown has B=50.& negligible Ico.
A. Find VBB if VCC = 10 V, VCE = –1V, and
RL = 250 Ω.
B. if VCC = 10 V, find RL so that IC = –20
mA and VCE = –4V.
50+ Most Expected Question (Part-3)
50+ Most Expected Question (Part-3)
50+ Most Expected Question (Part-3)
50+ Most Expected Question (Part-3)
50+ Most Expected Question (Part-3)

Q. It is predicated that, for germanium, the reverse

saturation increase by 0.11°C–1. It is found
experimentally in a particular reverse voltage of 10V,
the reverse current is 5 μA and the temperature
dependence is only 0.07°C–1. What is the leakage
resistance shunting the diode?
50+ Most Expected Question (Part-3)
50+ Most Expected Question (Part-3)
50+ Most Expected Question (Part-3)

Q.) A certain photo-surface has a spectral

sensitivity of 6 mA/W of incident radiation
of wavelength 2537 𝐴ሶ , the number of
electrons emitted photo electrically by a
pulse of radiation consisting of 10000
photons of this wavelength, will be
________.
50+ Most Expected Question (Part-3)
50+ Most Expected Question (Part-3)
Q.) An n-type germanium bar used in figure,
having majority carrier concentration ND =
1017/cm3 and mobility μ = 3800 cm2/V-sec.
Assume Bz = 0.1 Wb/m2, d = 3 mm, and Еx =
5 V/cm. The magnitude of the Hall voltage
VH is ________.
50+ Most Expected Question (Part-3)
50+ Most Expected Question (Part-3)
50+ Most Expected Question (Part-3)
Q.) If you wanted to produce a p-type
semiconductor, which of these would you
use?
a) Acceptor atoms
b) Donor atoms
c) Pentavalent impurity
d) Silicon
50+ Most Expected Question (Part-3)
Q.) Determine the change in collector
current, ∆Ic due to change in base emitter
voltage VBE from 25°C to 100°C for a
Silicon Transistor in Fixed Bias
Configuration having β = 100.
(Consider following variation in Silicon
transistor parameters with temperature- At
T= 25°C, VBE = 0.65 V and At T = 100°C.
VBE = 0.5 V)
(a) 60 μA
(b) 30 μA
(c) 15 μA
(d) 120 μA
 50+ Most Expected Question (Part-3)
Multiple Select Question
Q.) In the given circuit if VCC = 10 V and
(MSQ)
VBB = 5 V. β = 100, VBE = 0.7 V then for Ic
= 10 mA and VCE = 5 V.

a) The value of resistance RC = 0.5 kΩ.

b) The value of resistance RB = 43 kΩ.
c) If 100 Ω emitter resistance is added to
circuit then circuit will become self
biased circuit.
d) For given circuit Q point is stable.
 50+ Most Expected Question (Part-3)
Multiple Select Question Q.) In the two-stage circuit shown, assume
(MSQ) β = 100 for each transistor, VCE1 = -4 V and
VCE2 = -6 V.

a) The value of resistance R = 210 kΩ.

b) The given figure is an example of
transistor compensation for Q point
stabilisation.
c) Fixed biased circuit is more stable
than self biased circuit.
d) Thermistor has positive temperature
coefficient of conductivity.