“ith id ily pri Whenever 3 , ‘ nit a Wy a wide ‘ : 26 bee «(positive chan, ioe fot sae , rw regative space chal Ff sat ide of 44 tied : pened on wither side of junction gre PR an svetion and a2 of Pom Je. Buie 10 positive spice charge gr 8-OF Imeneser toe Th Rien go ctetie Held iS developed! at the junediat A Neat vg et devel of yar eee erie fei electeons drift fray HH ch as eto 4 drift current. Thy Morr of te i te Pode | ailibriurn state the two, drift curent io : " pl NE fuKt alan eqcye CPOE hs thar ag geet Me ht ivi ie* ; wsiOn ahd spain oF uy jection THs potential opposes further flow of oem» FP firier potential charge carriers aciy x When sve foln an external potential source ay led the ice and n-side of junction : ide of pi fue oi replete eoutse: the funtion i ety Sees Pe OO Sisarrangemvent, width of depletion layers reduced and sons eae Bian, I comet flows easily: and dynamic resi ea And potential bartier slow ci ; stance offered: by pu juncd ered, Crsequently ifthe forward bias voltage is tons junction in forward bins iw than # threshold volt tus grostor than threshold voltage (~ 02 V4 cen ere itn pele ie inb terminal of yi revere biased, In reverse current increases. exponentially even lor a small incroe W fortalicon deste) pon junction ks joined to ve i 21 When pide the junction Is sale tot sind the potent siirent flows ae catremely high, lage souree and feadde i as, the Wilt of the cep nly, an extremely sina (ol m | barrier is fortified, Conseq. bse the pun junction due'to minority charge eartiers and jn 4 Duw:to:its property of seloctive conduction in forward bias, a pen junetion can be w i, to toctty-a.c In 48 Aluliwave rec 4 fulkwave rectifier allows unictirectional, current 6 With the help of a capacitor input filter the output voltage catt be southened As a evetiine ab nto uuniei ut hal output signal cr alkows only: positive: half of the input a.c. anal locks megative hall. However complimentary ro Woalmost d.c. voltage. ERE TBOOKERERCES ——— HU. In an n-type silicon, which of the following statement is trae {) Electrons are majority earriers and trivalent atoms are the dopants, 1) Electrons are minority carriers and pentavalent atoms are the dopants. (0) Hotes are minority carriers and pentavalent ator» are the ee (0 Holes are majority carriers and trivalent atoms are the dopants, Correct statement is (¢), according 1 which (9 Holes are minority carriers and pentavalent Which of the statements given in Exercise 14-4 Statement (i) is trae for p-type semiconductors, °° {@) Holes are majority carriers and trivalent atoms are semiconductor Eloconies « Malet Oe ‘atompare the dopants . ig true for p-type semiconductors ? according to which e dopants ica ant Sino Croat | 641143; Carbon, silicon and germanium have four valence lesions each: These ate by valence and conduction bands separated By ghergy bane gap respectively (Es; and (EQgq Which of the following * ees, eae > (Ey 1) (Est < dee < (Ele |) Ege < Ey 8 | (0 (Ee = (gles = (Ede } hatiety (0) Ede > (Epes > ie oe (Eh ‘Ans. The correct option is (o), according to which CE, Ie > (Ey si 144. tn an unbiased jen junction, holes diffuse from the p-region to n-n (2) free electrons in the neregion attract them. (8) they move across the junction by the potential difference. (c) hole concentration in jr-region is more as compared to r-region. (W) Allthe above. | ion because Ans. Correct option i (c), according to which (2) hole concentration in p-region is more as compared to n-region. 14.5, When a forward bias is applied to a p.m junction, it (9) raises the potential bartier. ()) reduces the majority carrier carrent (©) lowers the potential barrier. (@) none of the above. Ans: Cartest option is () aécording to which “when a forward bias is applied t0 pn juncty g lowers the potential barrier” 146; In halt-waye rectification, what is the output frequency ifthe input frequency is 50H. Wy 44 the output frequency of a full-wave rectifier for the same input frequency ? Anis, Frequency of inpitt supply v= 50 Hz + Output frequency of half-wave fectifier = ¥= 50 Fz and oulpait frequency of « fullwwave rectifier = 2v=2.% 50 = 100 He. Out of Syllabus, 10 20, 147. MA, The number of silicon atoms perm? in 5 > 102%, atoms per m! of Anenic and 5x 10% perm? atoms of Indium, Calculate the number of ‘This i¢ doped simultaneously with § «10 electrons and hales, Given that 1) = 1.5% 10! ay, Is the material n-type or p-type ? ‘Aon Whon a setilcendtor ial bth donor (pentavalan)) ancl acceptor trvaleny) atom then br charige neutrality, following condition should be fulfilled.» Np -Nasne =m, whete Np aro donor itsins and Ny are acceptor ators, ‘Alte for 4 semicondticlor having ny Intense change carriers, we have ‘) y+ Adding (1) and (4), we have x ie = 5 Given, No “10 Ne 5it erent 45; 107 m2 Mh the crystal is n-tyy ood the fOllOWINE AN ANSWEF Dy fone gue, sands in Crystalline Soligs— Ay na, Fang obits electrons depends on the orbit ee Ievel, However, inside a crystalline soa ig aectrons from neighbouring atoms would « Techelectron will have a ditfere pen variation form energy bands Soe energy band which includes the energy lovely of th Sand All the valence electrons reside in the valence bund. 1 Weaied the conduction band. Normally the conduction hand inane, “Tibi lowest level in the conduction band happens tobe i Wind electrons from the valence band may « “fehavesas.a conductor. Hithere is some gap between the conduction band and the valenew bund, eleetPohs lin the valen Mand remain confined to it and no free electrons are available inthe conduetion baad. ttimoler te fan insulator, j femme of the electrons from the valence band may gain external energy to cross the gap betweun FL. conduction band and valence band, these electrons will-mave into the conduction band and ly create vacant enorgy levels in the valence band. Therefore, there is a possibility of | Gohduction due to electrons in conduction band as well as due to vacancies in the valence ban The conduction band in a polid is partially filled at 0 K, The given solid is (0) an insulator, Gd) prtype memiconidictr. et at absolute zero temperature is called mS from (() by () INE Aton n PAS a emul, energy level. These i with continous Valence electrnes is called the band. The energy band ae above the valence band lower than the highest lev sasily move tnte the: conduction of the Wale nt And the wl W) neonductor. 9 asemiconductor ‘The expected energy of the electrons ina sol “(@ emission energy. (0) fermi ene 19 forbidden energy. (a) work fanction: Tan insulator ies peeiden energy gap between the valence band ‘and conduction band is ad () oad Mev nergy gap between the conduction Pam ie conductor. x inwilator. (0) conductor, (©) ; ae ty ae jiagram © 44.01 shows energy band diagram 5 Fis decreased, then } Eyand E increase but Fy decree acl " Mateo emiooncuctor Eieoror(8) Ey.and Ee decrease but Ey increases (0) By, Ecand E; all the three decresse (0 Ey, Be andl E, all the threeiincrease. Ans. (0. (0) a conductor CH) (b) termi energy. Wid) (fy 5 eV ‘ (%) (©) a semiconductor : (0) (a) Ey. and Ex inereae but E, decreases Fig 1401 Q2. Read the following and answer any four questions from (7) to(0) Rectifier — A pn junction allows current to pass only when it is forward biased. This proppeyy .¢ diode is made use of to rectify alternating, voltages: Tan alternating voltages applied aerins a diode in series with a lond, a pulsating voltage appa, across the load only during the half-cyeles of a.. input durinys which the clocle is torward base To getoutput rectified voltage corresponcding to both positive as well as negative half ofa, supp We arrange the circuit using two diodes. Such an atringement is called full-wave rectifier, Ou {ull-wave rectifier bs unidirectional buit it does not havea steady value, To get steady «6 output weuse a filter, i) A rectifier is an electronic arrangement, w! (a) transforms alternating cuirrent into uniditectional current. () transforms ditect current into alternating, current, (6) oth (a) aswell as (Hy. i) none of these. (i) A pom junction diode hana resistance of 200 when forward 5 aon oy biased and 2 10° 9 when reverse biased. The current in the — it diode for the arrangement shown here will be Fig. 1402 (a) 040 eA (9 ODA (a) 250A (ii) What is the correct circuit diagram of a halfewave rectifier ? SCTE “he "7 Fig. 4.03 (ip) Select the correct statement : i) a full-wave retiter wo diwen wi oo) Ina floret to ide wormage (6) The-ffckeney of full at half-wave rectifier is same (a), The full-wawe roetiBier is bidirectional, fe) An ae. of frequency 50 He iy present in output af rectifier iy @) ste We any 668 | WLIKE Pryce (a)2) At, copper bs a PET |S a Rood ; 4, As per Kitchhott’s law v seems > m1. TDethi 2005) O58 “Ans.‘Ans. Doping of an intririsic semiconductor means deliberately introducing & controlled quan, (generally 1 part in 10° parts or 0.001%) of impurity element which is either pentavalent gp valent s0 45 to obtain n-type and p-type semiconductors, respectively. ‘The electrical conductivity of an extrinsic semiconductor formed as a result of doping is many folg increased as compared to that of undoped intrinsic semiconductor, Distinguish between an intrinsic semiconductor and p-type semiconductor. Give reason, why Potype semiconductor is electrically neutral, although m, >> m1. TDethi 2005) O58 “Ans.Be — in the terms and 9 bartier potentiaye increase ion, an fora Eien SA Sasng across theme ni: HOW doe (an epletion layer’ and ‘bar (Dethi 2 bide Ay te sctthe width, ie ans For depleti + batticr potential sue Sins A 26 A. toa spent oe (The width ofthe depletion layer dan 55 ON Ir net oestONS Number ge 7 Cl ) In forward biasing arranger Sn lhcreasing the. i EME the wide loping concentratio the width of depletion tayer increases of MePletion lye cranes bt in ve es But in reverse 9. How is forward biasing different ¢ rt biasing rom reverse by ward biasing anid reve d biasing arrangement 1. External voltage is applied junction such that puside jg +yeteminal and side to: voltage supply. 2. Unider forward biasing the depletion ayer width decreases. and barrier potential ig reduced. 3: In forward biasing p-n junction offers fies resistance and a Current flows tasily, sing in Se biasing Px junction diode 7 1Dethi 2011) Formnnd bias, ACROSS Fo contticetic fe ve terminal of Qa0. Assuming that two diodes Dy and Ds used in the electric circuit shown (Fig, 14.18] are ideal, find out the value of the (-—[>+ current flowing through 2 0 resistor, [Foreign 2017) Ans. An ideal diode offers no resistance in forward bias but an 4 infinite resistance in reverse bias, Hence, no-current will low through diode D; and main circuit current flowing through 20 2.2 resistor will be ame oa Te eee aga Pee Gra QUL. Two semiconductor materials X and ¥, shown in the given Fig. 14.19, are made by doping Sermanium crystal with indium and arsenic respectively, The two are joined end to end and connected to a battery as shown. (@) Will the junction be forward biased or reverse biased ? vee (i) Sketch a V-F graph for this arrangement. Ans. (i) The semiconductor material X is behaving as p-type, because here aT wes as rl because ee anneal patton fale connected to positive terminal of battery, the jurstion is @ oe is shown in Fig. 14.17. ailexw eX oteta we A semiconductor has equal electron a se eeeitmt 7 caty te eno ‘semiconductor obtained after doping as | {H) Calculate the new hole concentrate: | a ai q ‘Ans, Here 6 108m and an oping = 9100 hence the doped a hasNie know that for a doped semiconductor nn, <2 9x10" Explain with the help of a circuit diagram, the working of a p-» junction diode hatha 1A. 2006, 2013 G, 2014, 2016, Delhi a ‘circuit diagram of a half-wave rectifier is shown. Fig. 14.20(a). As the supp! one, hence the voltage supplied by the secondary of the transformer across; Alto alternating, When the voltage at is positive, the diode is forward biased aig Ais the diode is reverse biased and it dors not conduct. a current through th ‘Toad resistor Ry and we get an ouigay lof, teres ne cuttent and hence no output voltage Tha ‘only and is rectified. Since the rectified output its called as “half-wave rectifer”. The iipit ang 009, 2016) ly vieis as ‘| ned tb) ' 0 -5y ; Fig. 14.23 bal Ans. (2) ASV) ¥ ) Veo5y Hence diode ts reverse by (9 Aa Yo-Yo 10-52 Su hc ee iad Gh Aa ty Ma = 10 Om, eng diay Weve bi i (0 As Vy Vy = SVQ yye gy fe V=47, Give its ; [CBSE Sample Question Paper] Or ‘Wave rectifier circuit and briefl (Ad, 2011, 2012, 2017, 2017 ©, Or A.student wants to use two p-n junction did: oi Vert a.c into de. Draw the labelled circuit diagram she would use and explain hovy it works, Draw a labelled diagram of a full ly explain its working. Show the input-output waveforms, Dethi 2007, 2009, 2014, 2015 C, 2019) Jcuse 2018) uency Ans, We use a full-wave rectifier circuit pulsating dic. signal of freqouney 2y, The circuit arrangement of a fullvave arrangement to convert an ac. signal of fre rectifier using two diodes Dy and Dy is shown in figure We use a centre tap transformer Raving is secondary wound into tivo equal parts auich that voltages at any instant at (input of diode D;) anid B (input of diode D,) are qut of phase with cach other, Let initially input voltage at A is positive then it will be negative voltage at Bat that instant‘Consequently diode D,, being in forward bias, conducts while D3, being in reverse bias, does no [eondluct, We get output current and hence output voltage across load resistance Ry joined between Nand ¥ due to Dj. After hatf-cycle of ac. input, voltage at A becomes negative and that at g Positive. Now diode D, does not conduct but Ds conducts and output voltage is again obtain actos Ry in the same direction. Thus, output is oblained throughout the input wave cycle. The input and output waveforms have been shown above. (Q2 What is an intrinsic semiconductor ? How can this material be converted into (i) putype, (i) n-type extrinsic semiconductor ? Explain with the help of energy band diagrams, Ans. A puire semiconductor is called an intrinsic semiconductor. Pute silicon and germanium behave ag intrinsicseiniconductors. ()) te-type semiconductor : When we dope an intrinsic semiconductor (say silicon), which has folir valence electrons, with a controlled quantity of pentavalent atoms, s4y phosphorous, ‘which has five valence electrons, these impurity atoms are adjusted in the crystal structury ‘of silicon. Four of the five valence electrons of phosphorous are shared in covalent bonding ‘with four neighbouring silicon atoms, while the fifth electron is comparatively free to move. re ae ore eee n-type semiconductor is formed, ‘the energy band diagram in Fig. 14.10, these donor electrons form an energy IEC ee che bead et on applying an external electric field pass on to the conduction ‘band and can freely conduet. _ (ii) prype semiconductor : When we dope intrinsic silicon with » controlled quantity of trivalent Gay akiminium) impurity atoms, there will be one incomplete bond wherever impurity ‘has only three valence electrons, Thus, there is a deficiency of aaa aceite sae a secron from one of the Si-SiTwo main distin cas hing feat in etween them ate as folio Consduchors (rietatsy ~— BE Nea 1, The conduction band hee and valence band 1 Asma enesey gap OFabout | eV exists overlap. Se Pe, and conduction band luction ban 2. Alarge number of Ava tery wperature other % conduction electrons are | thai absolute zero few an a, re % € all d, aay & = - 5 Q5. Show, on a plot, variation of resistivity of (() a conductor, and (i) a typieal semiconductor as a : function of temperature. Using the expression for the resistivity in terms of number density and relaxation time between 7 | the collisions, explain how resistivity in the case of a conductor increases while it decreases in a } semiconductor, with the rise of temperature. TAL 2019) : Ans. Variation of resistivity py of (f) a conductor, and (i) 9 typical semiconductor as a function of i temperature T has been shawn here. : a i z ; 2 ; i | 0 > Twmperatina T (W) Semiconductor > Temperature ()/Conayetor Fig. 1427 tn i wn by the relation P= oy The resistivity of a material ks sgiven by =e | When conductor does ! | the muanber denalty of conduction electrons i) ina Ce cpieiae ee atomic/molecular vibrations increases and, corey pa ey ‘of callsions ‘with electrons increases. As a result, relaxation period decreases sae resisti luctor increases. : Ge mae ae Increasing the temperature, In seanicondluctors, ; =i _ fine in temperature due to transfer of tion level on account of hight kinetc energy of fe aston ec perio it of much consequees, Duet nrg circuil diode tages ow Vol characters of apn unelon 208 , ae of the characteristic curves: aves Draw ne AEA 205,208 20,2008) Re forward and the revert lang of « Fi t jp of necessary diagrams, Ine twocwes, Explain briefly, with the help fe curves in the junction de ie dv ec ecm a ne rae eAns. Working of a p:junction diode can be studied in () forward blas, and (Hi) rever ngeMeNt We pre bins arrange To study characteristics af a p-r junction in these blaning ar “ed 8 favs, (9) Forward bias: In forward bias arrangement p-sieis of p-t junction i hown int F vonniected to 4¥¢ termi 425A). A voltmeter Of battiery and t-side to —ve terminal of battery as and a rulliganmeter mA are joined as shown In igure: The voltage applied to pon june can bbe altered by swing a theostat with battery , In forward bias, the current jp frst increases very slowly tll a certain threshold voltag (07 v4 silicon diode) is reached. After the threshold voltage, the diode current increases exponention, teristic curve is shoven €ven for a very small increase in the diode bias voltage. ‘The char Fig, 14:28), os ae =v) (a) ) Fig. 1428, Mil) Reverse ‘bias + In revere bias arrangement pride of pon junction 4h connected’ to -re terminal and m-side to +vo terminal of battery as shown in Fig. 14.29(a). A voltmeter V and a microammeter 1A (since current in reverse bias is extremely small) are also connected as shown. In reverse bias the battery is capable of providing 4 Volt ’ In reverse bias, the current fis very gmall and almost remains co reverse bias voltage Ve. It (6 called “reverse saturation current”, Ho reverse bias the current suddenty increases, This voltage is known as thi 6 or zener voltage. The characteristic curve is shown in Pig. 14.296). Vp (V) = 100 ge of even up to 100 nt with. chang ak very h akdown voltage (yay = () Fig. 1429) Q7. Draw V-1 characteristics of 4 p-n junction diode. Answer the following questions, giving reasons: (7) Why is the current under reverse biay almost independent of the applied potential upto 2 critical voltage ? (id, Why does the reverse current show a sudden increase at the critical voltage ? Name any semiconductor device which operates under the reverve bias in the en i TAs 20 region. ~ 658 | U-LKE Pryvor™t! A ;a QS. What isa filter > With the help of and output w Pet waveforms to Ans. the rectified output. But pats load and the voliage nero gi wo El th d to the peak w Lange, then rate of fall of the volta to teakdown Sreuit agram describe the roe redvet of capa across the capacitor is slow t V an obtained by using capacitor input filter is almost equal to the . if value of capacitance Can oe Sie angen ——_ x seearpenet high . . j > * 7 voltage Input 06 & ‘ | + Hee he (a Fig. 1430 09, With the help of «labeled ciruil diagram, explain how a junction diodes used ap fellate ectifier, Draw its input and output wave forms How do you obtain steady d.c, output from the palsating voltage? {Dethi 2013 CH For use of junction diode asa fullewave rectifier see Long Ansys Questionst Number 1. Fo obtain steady d.c. output from, the pulsating volta provided by the full-eave rectifier we aesect a capacitor Gof high eapacitanét io parallel tthe oad! site Ry Tho ac: dpple present in pulsating wolage ie oypassed through te sepicton because i 04 npedance at path for that, Asa resull, steady dc ‘utpuit is obtain’ across the Lond nesisancs £Q.30, (i) Inthe given ig. 14.3175! la a semlcondacie® Would £ you increase or decrease the value of Rio keep the at reading of the ammeter A constant whieh Sip heated ? Give reason for your answee. (0) Inthe given Pig: 14.32, which will glow and why? pulb out of By and Bs- > 1, SECTION C Show, O11 plok, Variation of wailsivity of ()) a conductor, and Ui) a typical semiconds function of temperiture, Using the expressican for the resistivity in teri of number density ar telacation time between the collisions, explain) how nesistivity in the cake of a conductor incteasos while Nt decresses ina serniconduictor, with the rise of temperature, 6) QAI2, Draiy'a labelled diagram of a fall-waye rectifier ctreuit and briefly explain its working. Shaw the input-output waveforms a 13, In the iiven Fig, 14.37, which bulb out of By and 8 will glow and why ? ay sh jy and Bz will gl Cs ig 4.97 SECTION D Q:14. 60) Write any to distingaishing features between conductors, semiconductors ancl insulators on the basis of energy band diagrams. (4) Explain with the help of a diagram the formation of depletion layer and potential barrier a por junction: 6 QAS. (a) Draw and explain the sutput waveforn across the load nslbtor R, f the input wav shown in the given Fig. 14.38, +5,