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Bloque 2 Parte2 OGV
Bloque 2 Parte2 OGV
Básica:
Complementaria:
Most of the integrated amplifiers (see figure at the top of the slide) increase their
gain by cascading stages with low complexity (see figures at the bottom of the
slide) that provide either voltage gain, current gain or some improvement related
to impedance.
It is, of course, possible to study these complex amplifiers considering all the
transistors at the same abstraction level. However, the best wat to proceed is to
learn to identify some common structures that, once known, help us to simplify in
a great manner their analysis.
In CMOS technologies, configurations aimed to increase the transistor input
impedance have no sense, since this is a natural property of this kind of devices.
In this section, we will learn to identify some of these common structures to allow
us to understand how complex circuits work by inspection.
Cascode Amplifiers
The word cascode appeared for the first time in the area of vacuum tubes to
refer to cascade connections that connected the anode of one stage to the
cathode of the following one.
rinc
1
g mc g m1 1
1 ( g m2 g mb 2 g ds 2 ) ro1
g mc g m1
g m 2 g mb 2 g g mb 2
roc ro 2 ro1 ro1 m 2 ro1 Avc ro1
g ds 2 g ds 2
It is clear that the input resistance is that of the transistor M1 (practically infinite).
To evaluate the output resistance, we need to cancel the input (Vi = 0) and the
load resistance (R = ∞) and then measure changes at the output current as a
function of changes at the output voltage.
CS-CG configuration vs CS single transistor
CS-CG
g m 2 g mb 2
rinc g mc g m1 roc
g ds 2
ro1
3.- The output impedance is A times larger in the CS-CG configuration, being A
the voltage gain of the cascode transistor.
MOS Cascode Amplifier frequency response
1
f 3 dB
C L C gd 2
2 c
Lg g o
MOS Cascode Amplifier frequency response
MOS Cascode Amplifier frequency response
In summary:
Gain is increased at the cost of decreasing the frequency position of the first pole.
Notice that:
Thus:
rinc
g m 2 (a 1) g mb 2
roc ro1 (a 1) roCasc
g g m1
c
m g ds 2
2. The ourput resistance is (a+1) times larger than that of the simple cascode.
3. These improvements are valid only at those frequencies where the amplifiers
keeps its constant gain. This means that this configuration is valid for are smaller
frequency range as compared with a simple cascode.
4. BE careful with the dynamic behaviour of the amplifier: the feedback loop can
provoke unstable output results.
Stage 2.4: DIFFERENTIAL AMPLIFIERS
Transistor mismatch.
Differential
Differential output v od gain
v od v o1 v o2 Ad
vo1 vid
vi1 + Amplifier
( v o1 v o 2 ) v ocm
vi2 - (linear network)
vo2 v ocm Acm
Common mode
2 vicm
gain
The definitions in the slide are used to apply the superposition theorem thus
allowing an easy way to analyse different inputs separately while they are
applied simultaneously to the same input nodes.
MOS Differential Amplifier
NMOS differential pair basic configuration: two matched
transistors Q1 and Q2, with common sources and fed by a
constant current I.
vod vo1 vo2
vod vD1 vD2 0
The Common Mode Input Range is the range of vCM for which the differential
pair works properly:
Max value will be given by the requirement that both Q1 and Q2 are in SAT
region:
𝑉_𝐷1 𝑉_𝐺1 𝑉_𝑇 → 𝑉_𝐶𝑀𝑚𝑎𝑥 𝑉_𝑇 𝑉_𝐷𝐷 𝐼/2 𝑅_𝐷
Min value will be given by the minimum voltage across the current source I
that implies a correct operation:
𝑉_𝐶𝑀𝑚𝑖𝑛 𝑉_𝑆𝑆 𝑉_𝐶𝑆 𝑉_𝑇 √ 𝐼/ 𝑘_𝑛^´ 𝑊⁄𝐿
Where 𝑉_𝐶𝑆 is the required voltage through the current source.
MOS Differential Amplifier
NMOS differential pair basic configuration: two matched
transistors Q1 and Q2, with common sources and fed by a
constant current I.
vod vo1 vo2
vod vD1 vD2
It is useful to know the value of 𝑉_𝑖𝑑 that causes that the whole current, 𝐼,
passes through only one of the transistors.
In the positive direction, this happens when 𝑉_𝐺𝑆1 reaches a value that
corresponds to 𝑖_𝐷1 𝐼 and when 𝑉_𝐺𝑆2 decreases to the value 𝑉_𝑇
(𝑉_𝑆 𝑉_𝑇):
𝑖_𝐷1 𝐼 𝑘^′/2 𝑊⁄𝐿 _1 𝑉_𝐺𝑆1 𝑉_𝑇 ^2→𝑉_𝐺𝑆1 𝑉_𝑇 √ 2𝐼⁄ 𝑘^´ 𝑊⁄𝐿 _1
𝑉_𝑖𝑑𝑚𝑎𝑥 𝑉_𝐺𝑆1 𝑉_𝑆 √ 2𝐼⁄ 𝑘^´ 𝑊⁄𝐿 _1 ⇒ √ 2𝐼⁄ 𝑘^´ 𝑊⁄𝐿 _1
𝑉_𝑖𝑑 √ 2𝐼⁄ 𝑘^´ 𝑊⁄𝐿 _1
In the negative direction this happens when Q1 is in CUT and I flows only through
Q2:
𝑉_𝑖𝑑𝑚𝑖𝑛 √ 2𝐼⁄ 𝑘^´ 𝑊⁄𝐿 _2 ⟹ √ 2𝐼⁄ 𝑘^´ 𝑊⁄𝐿 _2 𝑉_𝑖𝑑 √ 2𝐼⁄ 𝑘^´
𝑊⁄𝐿 _2
MOS Differential Amplifier
• If vid>0 => vGS1>vGS2 => iD1>iD2 and vD1>vD2. • Current at Q2 will decrease: I/2-I.
• If vid<0 => vGS1<vGS2 => iD1<iD2 and vD1<vD2. • A voltage IRD will appear at one drain node
and - IRD at the other.
MOS Differential Amplifier
I W v (v / 2)2
iD1 k I ( id ) 1 id
2 L 2 W
I / kn ( )
L
I W v (v / 2)2
iD2 k I ( id ) 1 id
2 L 2 W
I / kn ( )
L
I k
Large Signal Operation: (W / L)(VGS VT )2
2 2
k v (vid / 2)2
iD1 (W / L)(vGS1 VT )2 I 1
2
Q1 and Q2 in iD1 ( id ) 1
SAT, 2 VGS V T 2 (VGS V T )2
k differential pair
iD2 (W / L)(vGS2 VT )2 perfectly
2 matched and I 1 v (vid / 2)2
channel length iD2 ( id ) 1
vGS1 vGS2 vid modulation not 2 VGS V T 2 (VGS V T )2
taken into
iD1 iD2 I account: =0.
The equations for 𝑖_𝐷1 and 𝑖_𝐷2 are a function of the differential input signal,
𝑣_𝑖𝑑 𝑉_𝐺𝑆1 𝑉_𝐺𝑆2.
MOS Differential Amplifier
I k
(W / L)(VGS VT )2
2 2
I 1 v (vid / 2)2
iD1 ( id ) 1
2 VGS V T 2 (VGS V T )2
I 1 v (vid / 2)2
iD2 ( id ) 1
2 VGS V T 2 (VGS V T )2
We can obtain the normalized graphics for the
currents at the MOS differential pair:
I I v
iD1 ( id )
2 VGS V T 2
I I v
iD2 ( id )
2 VGS V T 2
I v
I iD1 iD2 ( id )
VGS V T 2
vG1=VCM-vid/2 vG2=VCM+vid/2
+vid/2 0V -vid/2
Equivalent
Circuit
The current through 𝑅_𝑆𝑆 will be zero. Therefore it will not play any role regarding
the differential gain.
Biased at
I/2
•We need to take into account that the offset voltage comes from mismatch
between devices. Thus, its polarity is not known a-priori.
•Three factors contribute to the DC offset voltage at the differential pair:
mismatch at the load resistances, mismatch because of W/L and mismatch
related to VT.
Effect of mismatch
W W 1 W
L
1 L 2 L
W W 1 W
L 2 L 2 L
Currents are not equally divided
between Q1 and Q2:
I I (W / L)
I1
2 2 2( W / L )
I I (W / L)
I2
Calculating: 2 2 2( W / L )
V ( W / L )
VOS OV
2 ( W / L )
VOV I / kn ´( W / L )
Frequency response of the Differential Amplifier
Consider the variation with frequency of the
differential mode gain, the common mode
gain and the CMRR.
Half
Analysis of the MOS differential pair with common
resistive load: mode circuit
Vo AM
Vsig s Using Miller´s Theorem
1
H
|Ad| |AM|
AM gm RL ´
H 1
fH
2 2CinRsig
Cin Cgs Cgd (1 gm RL ´) fH f
Frequency response of the Differential Amplifier
Consider the variation with frequency of the
Now, we analyse the
differential mode gain, the common mode
common mode gain
gain and the CMRR.
"single-endedly"
Half
Acm(s)=Vocm/Vicm.
Analysis of the MOS differential pair with common
resistive load: mode circuit
CSS/2 with 2RSS form a real zero in the common mode gain
function at a frequency much smaller than the remaining poles
and zeroes. This zero will be dominant in the frequency
response of the Acm and the CMRR.
The common mode gain shows a zero on the negative real axis of the s-plane at
a frequency: 𝑤_𝑧 1/ 𝑅_𝑆𝑆 𝐶_𝑆𝑆
This frequency is by far smaller than the other poles and zeroes of the circuit.
Frequency response of the Differential Amplifier
Consider the variation with frequency of the
differential mode gain, the common mode
gain and the CMRR.
In summary:
• common mode gain increases +6dB/octave
(20dB/decade) starting from a relatively small
frequency value.
• Acm shows high frequency poles.
• fz is important because it is the frequency at
which the CMRR of the differential amplifier
begins to decrease.
Slew-Rate
•It is due to different sources, however, we can state that it is due to the limitation in the
maximum current that the amplifier is able to provide to one of the capacitors that exist in its
structure (either internal or associated to the load).
• It is usually measured in V/s.
Example:
dV I
Vo=VD1-VD2 • If VG1=VDD and VG2=0 => o
CL dt CL
dV I
• If VG1=0 and VG2=VDD => o
dt CL
Differential amplifier with active load
MOS differential pair (Q1 y Q2) loaded using a current mirror (Q3 y Q4):
Q1 drain current (I/2) feeds Q3 which acts as the input of the loading current
mirror. A replica of this current is given by the output transistor of the mirror, Q4.
At the output node both I/2 currents are perfectly balanced. Then, there is zero
current leaving the circuit towards a virtual next stage (or to a load).
Also, if Q4 is perfectly matched with Q3, then its drain voltage will follow that of
Q3, thus resulting in an output voltage equal to 𝑉_𝐷𝐷 𝑉_𝑆𝐺3.
Differential amplifier with active load
MOS differential pair (Q1 y Q2) loaded using a current mirror (Q3 y Q4):
This factor 2 at the output node comes from the action of the current mirror that
converts the signal to a single-ended format (that is, between output and ground)
without loosing gain.
If a load resistance is connected at this output node, the current 2i will flow
through it generating the output voltage vo.
If no load resistance is added, the output voltage will be given by the output
current 2i and the output resistance of the circuit itself.
Differential amplifier with active load
MOS differential pair (Q1 y Q2) loaded using a current mirror (Q3 y Q4):
MOS differential pair (Q1 y Q2) loaded using a current mirror (Q3 y Q4):
The calculation of the Output Resistance, 𝑅_𝑜 𝑣_𝑥⁄𝑖_𝑥 is also left as an exercise.
Using the circuit in the slide you should obtain 𝑅_𝑜 𝑟_𝑜2∥𝑟_𝑜4, considering that
𝑔_𝑚1 𝑔_𝑚2 𝑔_𝑚 and that 𝑔_𝑚2≫1.
Differential amplifier with active load
MOS differential pair (Q1 y Q2) loaded using a current mirror (Q3 y Q4):
ro2 ro 4 ro
gm 3 g m
The output resistance of the simple current mirror can be improved (increased) using
more complex structures (Wilson, Cascode, double Cascode, Widlar, etc.). According to
this the gain can also be improved simply by using better mirrors as the load of the
differential pair.
In all the mentioned cases, to improve the output resistance of the circuit means
improving the gain of the amplifier.
Of course, there is a price to pay:
One of the main limitations of increasing the number of cascode stages is the
significant reduction of the input and output voltage ranges. This is particularly
critical in modern CMOS technologies due to the continuous reduction in the
biasing voltages. To solve this limitations the so-called folded structures as shown
in the slide, have been developed.