********************************************************************************

* UnitedSiC G3 1200V-35mohm SiC Cascode Spice Circuit Model v3.1

* Copyright 2018 United Silicon Carbide, Inc.
* This is a PRELIMINARY Spice Model of UF3C120040K4S
*
*
* The model does not include all possible conditions and effects,
* in particular it doesn't include:
* Self heating
* leakage current in blocking state
* Drain to source breakdown is notional only
*
********************************************************************************

*** UF3C120040K4S ***

.subckt UF3C120040K4S nd ng ns nss
Ld nd nd1 5n
Lmd ns1 nd2 1.5n
Ljg ng1 ns2 2n
Lmg ng ng2 70n
Lms ns2 ns3 3n
Ls ns3 ns 2n
xj1 nd1 ng1 ns1 jfet_G3_1200V_Ron params: Ron=35m Rgoff=0.6 Rgon=0.6
xm1 nd2 ng2 ns2 mfet180
Rss ns2 nss 1u
.ends

*** 1200V JFETs ***

.subckt jfet_G3_1200V_Ron d g s params: Ron=0 Rgon=0 Rgoff=0
*#ASSOC Category="N-Channel JFET" Symbol=njfet
.param Ron1={Ron}
.param Rgon1={Rgon}
.param Rgoff1={Rgoff}
.param a= {75m / {Ron1}}
X1 di gi s jfet_G3_1200V params: ascale={a}
XCgs gi s Cgs_1200V params: acgs={a}
XCgd gi di Cgd_1200V params: acgd={a}
Cgdex gi di {25p * {a} }
Cgsex gi s {0.2n * {a} }
Rd d di Rtemp {58.2m/{a}}
.MODEL Rtemp RES (TC1=3.93e-3, TC2=4.79e-5)
GRg g gi value={if(v(g,gi)>0,v(g,gi)/{Rgon1},v(g,gi)/{Rgoff1})}
.ends jfet_G3_1200V_Ron

*** Shared Subcircuit for 1200V JFETs ***

.subckt jfet_G3_1200V d g s Params: ascale=0
.param Fc1=0.5
.param Pb1=3.25
.param M1=0.5
.param Vd0=800

.param gos={0.0178*{ascale}}
.param gfs={43*{ascale}}
.param f=1.453
.param vth=-11.5

.param cgs1=0.594n
.param cgd1=0.0318n
.param bt={({f}*{gfs}+2*{gos}*{Vd0}/{vth})/2/(-{vth})}
.param lamd={1*{gos}/{bt}/{vth}/{vth}}
.param cgs0={pwr((1+30/{Pb1}),{M1})*{cgs1}}
.param cgd0={pwr((1+{Vd0}/{Pb1}),{M1})*{cgd1}}

J1 d g s jfet_1200
Dgs g s Dgs_iv
Dgd g d Dgd_iv
Rgs g s 1Meg
Rgd g d 10Meg

.MODEL jfet_1200 NJF(

+ Beta={{bt}} BetaTce=0 Vto={vth} VtoTc=0 lambda={lamd}
+ Is=1e-60
+ Cgs={{cgs0}*{ascale}} Cgd={{cgd0}*{ascale}} Fc={Fc1} Pb={Pb1}
+ M={M1})

.MODEL Dgs_iv D (CJO=0 BV=40 IS=1e-50 ISR=1e-50 Eg=3.5 Rs=0)

.MODEL Dgd_iv D (CJO=0 BV=1500 IS=1e-50 ISR=1e-50 Eg=3.5 Rs={9.62m/{ascale}})

.ends jfet_G3_1200V

* Cgs network
.subckt Cgs_1200V g s params: acgs=0
.param c0=1n
.param vsgmin=-2
.param vsgmax=15
.param a1={0.8n*{acgs}}
.param b1=1
.func Qgs1(u) {- {a1} / {b1} *(exp(- {b1} *u)-1)}

.param a2={0.7n*{acgs}}
.param b2=0.75
.param c2=9.5

.func Qgs2(u)
+ {if(abs(u)<{vsgmax},
+ {a2}*u + {a2}*(-{b2})*log(cosh((u-{c2})/-{b2}))
+ -{a2}*(-{b2})*log(cosh(-{c2}/-{b2})),
+ {a2}*{vsgmax} + {a2}*(-{b2})*log(cosh(({vsgmax}-{c2})/-{b2}))
+ -{a2}*(-{b2})*log(cosh(-{c2}/-{b2})))}

E1 s m1 value={v(s,g)-Qgs1(v(s,g))/{c0}}
C01 m1 g {c0}
E2 s m2 value={v(s,g)-Qgs2(limit(v(s,g),-{vsgmax},{vsgmax}))/{c0}}
C02 m2 g {c0}

.ends Cgs_1200V

* Cgd network
.subckt Cgd_1200V g d params:acgd=0

.param c0=1n

.param a1={0.3n*{acgd}}
.param b1=0.9
.param c1=20
.param vdgmax1=30

.func Qgd1(u)
+ {if(abs(u)<{vdgmax1},
+ {a1}*u + {a1}*(-{b1})*log(cosh((u-{c1})/-{b1}))
+ -{a1}*(-{b1})*log(cosh(-{c1}/-{b1})),
+ {a1}*{vdgmax1} + {a1}*(-{b1})*log(cosh(({vdgmax1}-{c1})/-{b1}))
+ -{a1}*(-{b1})*log(cosh(-{c1}/-{b1})))}

.param a2={0*{acgd}}
.param b2=0.5
.param c2=9.5
.param vdgmax2=15

.func Qgd2(u)
+ {if(abs(u)<{vdgmax2},
+ (-1)*({a2}*u + {a2}*(-{b2})*log(cosh((u-{c2})/-{b2}))
+ -{a2}*(-{b2})*log(cosh(-{c2}/-{b2}))),
+ (-1)*({a2}*{vdgmax2} + {a2}*(-{b2})*log(cosh(({vdgmax2}-{c2})/-{b2}))
+ -{a2}*(-{b2})*log(cosh(-{c2}/-{b2}))))}

E1 d m1 value={v(d,g)-Qgd1(limit(v(d,g),-{vdgmax1},+{vdgmax1}))/{c0}}
C01 m1 g {c0}
E2 d m2 value={v(d,g)-Qgd2(limit(v(d,g),-{vdgmax2},+{vdgmax2}))/{c0}}
C02 m2 g {c0}

.ends Cgd_1200V

*** Si MOS Model ***

.SUBCKT mfet180 4 1 2

*Gate-->1 Drain-->4 Src-->2

.param Ascale= 1.79
***Ascale used to scale the active area of the mosfet.It could be any positive data

M1 3 5 9 9 NMOS W={ {Ascale}* 2 } L= 0.00000033

M2 9 5 9 3 PMOS W={ {Ascale}* 2 } L= 0.00000036
Ld 4 7 0.1p
Ls 9 2 0.1p
Lg 1 8 0.1p
R1 7 3 RTEMP { 0.0051021 / {Ascale} }
RG 8 5 5
CGS 5 9 { 3.575E-10 * {Ascale} }
DBD 9 3 DBD

***********************************************************************************
***************************
.MODEL NMOS NMOS (LEVEL = 3

+ TOX = 6.00E-08
+ NSUB = 3.8E+17
+ VTO= 5.8
+ THETA = 0
+ kp= 1.788E-05
+ TPG = 1 )
***********************************************************************************
***************************
.MODEL PMOS PMOS (LEVEL = 3
+ TOX = 6.00E-08
+ NSUB = 4.8E+16
+ TPG = -1 )
***********************************************************************************
***************************
.MODEL DBD D (CJO={ {Ascale} * 2.6E-10 }
+ VJ= 0.7
+ M= 0.5
+ RS= {0.007/ {Ascale} }
+ IS= { {AScale} * 1.706E-12 }
+ TT= 8.00E-09
+ BV= 25
+ IBV= 0.00025 )
***********************************************************************************
***************************
.MODEL RTEMP RES (TC1=3E-3)
.ENDS

*** End of File ***