Answer keys : NCERT Booster Programme for NEET-2024(XII Studying)_Physics_Poll-11

You scored 0 of 4
Question : 1 homieee

The variation of energy inside energy band of solid crystal is

Options:

Continuous

Discrete

No energy level is formed

May be continuous or discrete depending upon configuration

Solution :
Answer (2)
NCERT Reference:
Physics -XII, Part-II, Page No.-469

You scored 0 of 4
Question : 2 homieee

Inside crystalline lattice of semiconductor, a vacancy in the bond with the effective positive electronic charge is called

Options:

Hole

Positron

Electron

Valence electron

Solution :
Answer (1)
NCERT Reference:
Physics -XII, Part-II, Page No.- 472
You scored 0 of 4
Question : 3 homieee

In an intrinsic semiconductor, number of free electrons and holes at room temperature are

Options:

Zero

Equal

Unequal

Infinity

Solution :
Answer (2)
NCERT Reference:
Physics -XII, Part-II, Page No. 472

You scored 0 of 4
Question : 4 homieee

In intrinsic semiconductor, at temperature marginally greater than 0 K

Options:

Valence band are partially empty and conduction band are partially filled

Valence band are fully filled and conduction band are partially empty

Valence band are fully filled

Conduction band are fully empty

Solution :
Answer (1)
NCERT Reference:
Physics -XII, Part-II, Page No.- 474
You scored 0 of 4
Question : 5 homieee

The n-type semiconductor is

Options:

Positively charged

Negatively charged

Electrical neutral

May be positively or negatively charged depending upon doping concentration

Solution :
Answer (3)
NCERT Reference:
Physics -XII, Part-II, Page No.- 475
You scored 0 of 4
Question : 6 homieee

Which of the following energy band diagram shows the p-type semiconductor at T > 0 K

Options:

Solution :
Answer (2)
NCERT Reference:
Physics -XII, Part-II, Page No.- 477
You scored 0 of 4
Question : 7 homieee

When we convert pure intrinsic semiconductor into p type, the number of free electrons

Options:

Increases

Decreases

Remain constant

May be increases or decreases depending upon doping element

Solution :
Answer (2)
NCERT Reference:
Physics -XII, Part-II, Page No.- 476

You scored 0 of 4
Question : 8 homieee

The direction of electric field develops across depletion layer is from

Options:

p-side to n-side

n-side to p-side

No electric field is develop

None of these

Solution :
Answer (2)
NCERT Reference:
Physics -XII, Part-II, Page No.- 478
You scored 0 of 4
Question : 9 homieee

Diffusion current in a p-n junction is greater than the drift current in magnitude

Options:

If the junction is forward biased

If the junction is reverse biased

If the junction is unbiased

Not possible

Solution :
Answer (1)
NCERT Reference:
Physics -XII, Part-II, Page No.- 480

You scored 0 of 4
Question : 10 homieee

Depletion potential of a diode under three different biasing is shown below

A. P represents diode in reverse biased, if R represents forward biasing

B. Q represents diode in forward biased, if R represents unbiasing
C. R represents diode in unbiased if, Q represents reverse biasing
Consider the above three statement A, B and C choose the correct statement

Options:

Only A is correct statement

A and B both statements are correct

A and C both statements are correct

B and C both statements are correct

Solution :
Answer (3)
NCERT Reference:
Physics -XII, Part-II, Page No.- 480
You scored 0 of 4
Question : 11 homieee

To get steady dc output from the pulsating voltage, which element is connected parallel to load resistance as a filter

Options:

Capacitor

Inductor

Resistor

Both (1) & (2)

Solution :
Answer (1)
NCERT Reference:
Physics -XII, Part-II, Page No.- 484

You scored 0 of 4
Question : 12 homieee

The current in the circuit shown below is

Options:

Zero

60 mA

6 mA

0.6 mA

Solution :
Answer (1)
NCERT Reference:
Physics -XII, Part-II, Page No.- 482
You scored 0 of 4
Question : 13 homieee

p-type semiconductor is formed when

a. As impurity is mixed in Si
b. Al impurity is mixed in Si
c. B impurity is mixed in Ge
d. P impurity is mixed in Ge

Options:

a and c

a and d

b and c

b and d

Solution :
Answer (3)
NCERT Reference:
Physics -XII, Part-II, Page No.- 476

You scored 0 of 4
Question : 14 homieee

The number of NAND gates require to form an OR gate is

Options:

Solution :
Answer (3)
NCERT Reference:
Physics -XII, Part-II, Page No.- 499
You scored 0 of 4
Question : 15 homieee

The combination of the following gates produces

Options:

OR gate

AND gate

NOR gate

NAND gate

Solution :
Answer (1)
NCERT Reference:
Physics -XII, Part-II, Page No.- 499

You scored 0 of 4
Question : 16 homieee

In a semiconducting material the mobilities of electrons and holes are μe and μh respectively which of the following is true

Options:

μ e > μh

μ e < μh

μ e = μh

μ e ≤ μh

Solution :
Answer (1)
NCERT Reference:
Physics -XII, Part-II, Page No.- 473
You scored 0 of 4
Question : 17 homieee

If any semiconductor material has concentration of holes less than the intrinsic semiconductor, then the semiconductor is

Options:

p-type

n-type

Both (1) and (2)

None of the above

Solution :
Answer (2)
NCERT Reference:
Physics -XII, Part-II, Page No.- 475

You scored 0 of 4
Question : 18 homieee

What is the power gain in a C.E. amplifier, where input resistance is 4 kΩ and load resistance is 32 kΩ given β = 9

Options:

10

72

648

588

Solution :
Answer (3)
NCERT Reference:
Physics -XII, Part-II, Page No.- 489
You scored 0 of 4
Question : 19 homieee

If Zener breakdown voltage is 8 V, then the potential drop across R is (Assume there is breakdown)

Options:

8V

12 V

20 V

15 V

Solution :
Answer (2)
NCERT Reference:
Physics -XII, Part-II, Page No.- 486

You scored 0 of 4
Question : 20 homieee

In a full wave rectifier, input AC current has a frequency f. The output frequency of current is

Options:

2f

3f

Solution :
Answer (2)
NCERT Reference:
Physics -XII, Part-II, Page No.- 484