Module — 1 1. Explain the various types of power electronic converters with the help of circuit diagram, input and output waveforms. AC-DC converter (Rectifier) A single-phase converter with natural connected diode is shown fig. the average value of the output voltage Vo can be controlled by voltage the varying the conduction time of the diode or firing, delay angle. The input could be a single or three phase sources. There converters are also known as controlled rectifier. Application ‘+ Speed control of DC motor ‘+ UPS, RPS © HVDC transmission Battery charger DC-DC converter (Chopper) + (a) Gireuie diagram (b) Voltage waveforms ADC-DC converter is also known as a chopper or switching regulator and a transistor chopper is. shown in fig. & the average output voltage Vo in controlled by varying the conduction time t, of transistor Q, if Tis the chopping period, then ty = gT. § is called as the duty cycle of the chopper.Application ‘+ Speed control of DC motor from a DC supply DC drives for sub-urban traction * Switching power supplied * Battery driven vehicles DC-AC converter (Inverter) (©) Chrenit ingeam (h) Voltage waveform ADC-AC converter is also known as inverter. A single-phase transistor inverter is shown in fig. if transistor M: and Mz conduct for one half of a period and Ms & Ma conduct for the other half, the output voltage is of alternating dorm. The output voltage can be controlled by varying the conduction time of transistor. Application * Industrial AC drives using induction & synchronous motor + UPS system used for computers * Aircraft and space power supplies AC-AC converter TRIAC Resistive 3 yeVasinot a * supply i - - (9) Cireuit diagram (b) Voltage waveforms‘These used are used to obtain a variable AC output voltage Vo from a fixed AC source and a single- phase converter with TRIAC is shown in fig. The output voltage is controlled by varying the conduction time of a TRIC or firing delay angle these types of converters are also known as AC voltage controller. Application Lighting control * Speed control of large fans & pumps * Electric tap changer With the help of suitable waveforms, explain the reverse recovery characteristics of power diode. Define reverse recovery time and derive equations for tx and In. Thiylee {a) Soft recovery (b) Abrupt recovery Reverse recovery time ty is the time interval between the application of reverse voltage and the reverse current dropped to a particular value as shown in Fig. Parameter ta is the interval between the zero crossing of the diode current to when it becomes ira. On the other hand, ty is the time interval from the maximum reverse recovery current to approximately 0.25 of ix. The ratio of the two parameters ts and ts is known as the softness factor (SF). Diodes with abrupt recovery characteristics are used for high frequency switching. In practice, a design engineer frequently needs to calculate the reverse recovery time. This is in order to evaluate the possibility of high frequency switching. As a thumb rule, the lower tee the faster the diode can be switched. tir=thtte If tp is negligible compared to ta which is a very common case, then the following expression is vali: PO 2QRr tee = yf (dildt) from which the reverse recovery current i 4, fae = 3, 2Qan3. With the help of circuit diagram and waveform, explain the single-phase full wave rectifier with “'R’ load. Ym dD ° 0 Wy e 7 © Afull wave rectifier circuit with a centre tapped transformer is shown in fig * During the positive half cycle of the input voltage, diode ‘D,’ conducts and diode ‘Dr’ is in a blocking condition. # The input voltage appears across the load. * During the negative half cycle of the input voltage, diode ‘D,’ conducts while diode ‘D: blocking condition * The negative portion of the input voltage appears across the load as a positive voltage. + The waveform of the output voltage over a complete cycle is shown in fig. Resistive Load The voltage across a resistive load for the bridge rectifier of Fig. is expressed as F,, sin wt for0 > Ves: In the ohmic region, the MOSFET conducts heavily. Hence it is said to be ‘on’ in the ohmic region. Thus, by applying heavy gate to source voltage, MOSFET can be on. In the power electronic applications, MOSFET is never operated in the active region. In active region it acts as an amplifier. For switching applications, MOSFET is operated only in ohmic and cut-off regions. The BVoss is the drain to source breakdown voltage, when the gate is open circuited, The MOSFET is damaged if drain to source voltage is increased above BVoss. (ii) Switching characteristics: 6 The internal capacitances of MOSFET affect the : : © tum-on and tum-off times of MOSFETs. These capacitances have no effect during steady state. Fig Gy St Dona shows the switching model of MOSFET. In the Fig. Czsis the gate to source parasitic capacitance and Cas is the gate to drain parasitic capacitance. The ] MOSFET can be turned on by applying positive gate voltage as shown in Fig, Cont Sigal Ves Drain-Source‘When the gate voltage is applied, the gate to source capacitance Cy, starts charging. The turn- on delay (tajon) is the time required to charge Ces to threshold voltage (Vs). After this voltage, the drain current (io) starts rising. The Czs charges from threshold voltage to full gate voltage (Ves). The time required for this charging. is called rise time (t,). Observe that during this period, the drain current rises to its full value, ie., ic. The MOSFET is then said to have fully turned on. Thus, the total turn-on time of the MOSFET is, ton = tant + be To turn-off the MOSFET, the gate voltage is made negative or zero. The gate to source voltage then reduces from Vosj) tO Vaso. That is, Cys discharges from overdrive to pinch-off region gate voltage. The time required for this discharge is called turn-off delay time (tay). The drain current also starts reducing. The Cs keeps on discharging and its voltage becomes equal to threshold voltage (Vr). The time required to discharge Ces from Vosp to Vrs called fall time (ts). The drain current becomes zero when vc. <_ Vr. The MOSPET is then said to have turned-off. The C,, then discharges to zero voltage. The turn-off time of the MOSFET is equal to sum of tum-off delay time and fall time. i.e., toy = to * Explain the steady state and switching characteristics of BJT. (Steady state characteristics: Figure shows the V-I characteristics of BJT. The characteristics are also called output characteristics. The collector current (iC) is plotted with respect to collector emitter voltage (VCE) for different values of base current (iB) Hace ‘Quasi-saturation Breakdown pve Bveco vee There are four regions clearly shown: Cut-off region, Active region, quasi-saturation and hard saturation. Cut-off region: The cut-off region is the area where base current is almost zero. Hence no collector current flows and transistor is ‘off. Quasi-saturation: In the quasi saturation and hard saturation, the base drive is applied and transistor is said to be ‘on’, Hence collector current flows depending upon the load. The BIT is never operated in the active region (ie., as an amplifier). It is operated in cut-off and saturation. Thus, BIT acts as a switch, The 'BVax' is the maximum collector to emitter voltage that can be sustained when BIT is carrying substantial collector current. ‘BVceo'is the maximum collector to emitter breakdown voltage that can be sustained when base current is zero (i., base open circuited). And 'BVcso' isthe collector base breakdown voltage when the emitter is open circuited.Primary breakdown: The primary breakdown in BJT takes place because of avalanche breakdown of the collector base junction. The large power dissipation normally leads to primary breakdown. Second breakdown: It is clear from Fig. that, at the large collector currents, the collector emitter voltage drops. Due to this drop in voltage, the collector current increases. Here there is substantial increase in power dissipation. This power dissipation is not evenly spread across the entire volume of the device. But it is concentrated in the highly localized regions. In these regions the local temperature grows very rapidly and the BIT is damaged. ‘Switching characteristics: Consider the model of NPN transistor shown in fig. the Ey a © equivalent collector base junction capacitance Ces and base emitter junction capacitance Cze play significant cs fig Z'e role during turn on and tun off. The effect of these capacitances can be neglected under steady state conditions. But turn on and turn off E (he, transient or switching conditions) are affected due to internal capacitances of BIT. The value of internal capacitances depends upon junction voltages and physical construction of BJT, Ye M ie : ef ror aw fo | ' Te, i Fig. shows the switching waveforms of the BJT. The base-emitter voltage is made positive to turn on the BIT. This voltage is Ver(on). As the base voltage becomes positive, the base current also starts flowing the value of base current is ls (on), In the above fig observe that collector current does not start flowing as soon as basw drive is applied. This is because the emitter base junction capacitance (Ces) starts charging when base drives applied. The delay time (td) is the time delay involved when collector current starts increasing after base drive is applied.When Coe charges to forward bias voltage of 0.7 volts, collector current reaches to its steady state value. The BIT is then said to be turned-on fully the rise time (tr) is the time required to raise collector current to its steady state value. The turn on time (ten) of the BIT is equal to sum of delay time and rise time ie Ton= ta + te The turn-off the transistor, base voltage is made negative, hence the base current is also negative, But the base current does not change for time (tr), This is called storage time. During this period, the saturating charge is removed from the base. After the store charges are removed, the base current starts reducing & collector current also starts falling. Once stored charge in base is removed, Cte is charged to negative base voltage & base current becomes zero. The delay of collector current depends up-on the stored charge and hence on Cpe. The tum-off time of the transistor is equal to sum of storage time and fall time. (tf) i.e., ton = te ty the fall time is positive time required by the collator current to decay to its 10% value. Explain the steady state and switching characteristics of IGBT. (it’s not more than imp above) (i)Steady state characteristics: Fig, shows the V-I characteristics of n- channel IGBT. Sometime the collector is also called drain and emitter is also called source. The above characteristics are plotted for drain (collector) current io with respect to drain source (collector emitter) voltage Vos. The characteristics are plotted for different values of gate to source (Vs;) voltages. When the gate to source voltage is greater than the threshold voltage Vos ‘tn, Then IGBT turns-on. The IGBT is off when Vis is less than Ves ny. Fig. shows. the 'on’ and ‘off regions of IGBT. The BVoss is the breakdown drain to source voltage when gate is open circuited. ‘The IGBT is the popular device now-a-days. IGBT has simplest drive circuit and it has low on-state losses ‘Switching characteristics: The figure below shows the typical switching characteristic of IGBT.Turn on time ton is composed of two components as usual, delay time (tan) and rise time (t) Delay time is defined as the time in which collector current rises from leakage current Ice to 0.1 le {final collector current) and collector emitter voltage falls from Vce to 0.9Vce. Rise time is defined as the time in which collector current rises from 0.1 Ic to lc and collector emitter voltage falls from 0.9Vc« to 0.1 Vee. Ton = tint te The turn off time tor consists of three components, delay time (ta, initial fall time (ta) and final fall time (ta). Delay time is defined as time when collector current falls from Ic to 0.9 le and Vee begins to rise. Initial fall time is the time during which collector current falls from 0.9 Ic to 0.2 le and collector emitter voltage rises to 0.1 Vce. The final fall time is defined as time during which collector current falls from 0.2 Ic to 0.1 le and 0.1Vce rises to final value Vcr. Toir= tart tin tie Here, trv is voltage rise time th is MOSFET current fall time. the is BUT current fall time. Explain the switching limits. 1) Second Breakdown (SB) Itis a destructive phenomenon that results from the current flow to a small portion of the base, producing localized hot spots. If the energy in these hot spots is sufficient the excessive localized heating may damage the transistor. Thus, secondary breakdown is caused by a localized thermal runaway. The SB occurs at certain combinations of voltage, current and time. Since time is involved, the secondary breakdown is basically an energy dependent phenomenon. 2) Forward Biased Safe Operating Area (FBSOA) During turn-on and on-state conditions, the average junction temperature and second breakdown limit the power handling capability of a transistor. The manufacturer usually provides the FBSOA curves under specified test conditions. FBSOA indicates the Ic= Vee limits of the transistor and for reliable operation the transistor must not be subjected to greater power dissipation than that shown by the FBSOA curve. 3) Reverse Biased Safe Operating Area (RBSOA) During turn-off, a high current and high voltage must be sustained by the transistor, in most cases with the base-emitter junction reverse biased. The collector emitter voltage must be held to a safe level at or below a specified value of collector current. The manufacturer provides | Veelimits during reverse-biased turn off as reverse biased safe area (RBSOA), 4) Breakdown Voltages A break down voltage is defined as the absolute maximum voltage between two terminals with the third terminal open, shorted or biased in either forward or reverse direction. BVsus: The maximum voltage between the collector and emitter that can be sustained across the transistor when it is carrying substantial collector current. BVcro: The maximum voltage between the collector and emitter terminal with base open circuited. BVceo: This is the collector to base break down voltage when emitter is open circuited.5) Base Drive Control This isrequired to optimize the base drive of transistor. Optimization is required to increase switching speeds. on t can be reduced by allowing base current peaking during turn on, (Br=lcs/ forced B) resulting in low forces B at the beginning. After turn on, Br can be increased to a sufficiently high value to maintain the transistor in quasi-saturation region. tarcan be reduced by reversing base current and allowing base current peaking during turn off since increasing Inz decrease storage time. 5. Give a comparison between BIT, MOSFET and IGBT. ‘Sr. Parameter scR BJT MOSFET 1GaT No. 1 ‘Symbol x c wd eched ae] - g © © K ese ee ee ee oe latching or linear | latching device 5 = es od oo ser*| as ae~ | “ae Control of gate or| Gate has no Base has full | Gate has full Gate has full 1h base control once: control control ‘control turned on TS 500 Hz frequency 7. | Gote dive Current Current Voltage Voltage a ‘Snubber Unpolarized Polarized Not essential Not essential: 8. | Temperature Negative Negative Postive | Approximately fat, ‘cosfficent ‘but positive at high current pj 10. | Voltage and | 10 kV, kA 2 AVIRA 1KyS0A | 1.5 KV/A00A ccurent ratings fan a a 411, | Voltage blocking | Symmetic and | Asymmetric | Asymmetric | _ Asymmetric capability | asymmetric (both) ia 12. | Applications AC to OC DC toAC | DC choppers, ow] DC to AC converters, AC | converters, | powers UPS, | converters, AC voltage controies,| Induction motor | SMPS, brushless |mator drives, UPS, lectronic circuit | drives, UPS, | DC motor drives | choppers, SMPS breakers | SMPS, Choppers te6. Explain the anti-saturation control of BJT with the help of suitable circuit diagram and equations. 7. Explain the gate drive circuit of MOSFET with the help of circuit diagram. 8. With neat circuit diagram and switching waveforms, explain switching characteristics of MOSFET. 9. The Beta(B) of bipolar transistor shown in Fig Q3(c) varies from 10 to 60, the load resistance R 50, the d.c supply voltage is Vec = 100V and the input voltage to base circuit is Vp= 8V, If Vo 2.5V and Vee= 1.75V. Find i) The value of R that will result in saturation with an over drive factor of 20 ii) The forced 6 Power losses in transistor. Fig Q3(c) 1. Discuss the importance of providing isolation of gate/base drive from power circuits and explain the two methods. 2. List the types of MOSFET’s, explain with sketch and structure of n-channel enhancement type MosFeT. (2) Enhancement mode (2) Depletion mode N-channel enhancement In n-channel MOSFET the body is formed due to the p-substrate material that is technically referred to as the substrate. The n-type material is required for the formation of the terminals called the source and the drain. Here the p substrate impurities are doped with light concentration whereas the n-type is doped heavily. Desi Dy n eure ee nThe device body that is formed due to p-type and the terminal source are connected toacommon ground. A positive polarity of the voltage is applied to the terminal gate. Because of this positivism, it corresponds to an effect of the capacitor. Hence in the p substrate, the minority carriers that are free electrons get attracted and move toward the terminal gate. Due to this a layer that is because of uncovered ions is formed below the layer of dielectric where the combinations of the holes with electrons occur. As the positive voltage applied gradually increases and crosses the minimum threshold the electrons which are minority carriers would be able to overcome the recombination with the holes and they form the channel between the two p-type materials. Further application of the positive voltage value at the drain leads to the flow of current through the transistor. The concentrations of the electrons are dependent on the potential applied. These concentrations of electrons are responsible for the formation of the channel and the application of the voltage at the gate enhances the flow of the current. Hence it is termed as N- channel MOSFET of enhancement type. 3. A power BIT is connected as a switch as in figure Q3(b) with the following data. Calculate i) The value of Ra that will result in saturation with an overdrive factor of 20. The forced 8 iii) Power loss in the transistor. Nees toov V8=' Re Fig. Q3(b) Vee Nee sav: 2-5V Vee sets 959 Re “rn Pos tH trunstitoy ve 1S Varied from 10 to 60. Res to a Power transistor. 5. A-simple transistor switch is used to connect a 24V DC supply across a relay coil, which has a DC resistance of 2002. An input pulse of 0 to SV amplitude to applied through a series base resistor Ra at the base so as to turn ON the transistor switch. Sketch the device current waveform with reference to the input pulse. Calculate: i) beat i) Value of resistor Ra required to obtain over drive factor of 2. ili) Total Power dissipation in the transistor that occurs during the saturation state.