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K3484 Nec
K3484 Nec
2SK3484
SWITCHING
N-CHANNEL POWER MOS FET
THERMAL RESISTANCE
Channel to Case Thermal Resistance Rth(ch-C) 4.17 °C/W
Channel to Ambient Thermal Resistance Rth(ch-A) 125 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
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ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Note Pulsed
D.U.T.
D.U.T.
RG = 25 Ω L
RL VGS
PG. VGS 90%
50 Ω VDD 10% VGS
Wave Form 0
RG
VGS = 20 → 0 V PG. VDD
ID 90%
90%
IAS BVDSS ID
VGS 10%
VDS ID 0 10%
ID 0 Wave Form
τ = 1 µs ton toff
Starting Tch Duty Cycle ≤ 1%
D.U.T.
IG = 2 mA RL
PG. 50 Ω VDD
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TYPICAL CHARACTERISTICS (TA = 25°C)
80
30
60
20
40
10
20
0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C TC - Case Temperature - ˚C
ID(pulse)
ID(DC)
10
ID - Drain Current - A
10 ed
V)
µs
10
= mit
DC
10
0
G Li
µs
Po mite
1
t V on)
Li
S
we d
m
10
(a DS(
rD
s
R
m
iss
s
ipa
tio
n
TC = 25˚C
Single Pulse
0.1
0.1 1 10 100 1000
VDS - Drain to Source Voltage - V
10
Rth(ch-C) = 4.17˚C/W
0.1
Single Pulse
0.01
10 µ 100 µ 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
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ID - Drain Current - A
10 VGS =10 V
15 4.5 V
TA = −40˚C
1 25˚C
75˚C 10
150˚C
1
0.1
5
Pulsed
0.01 0
1 2 3 4 5 0 1 2 3 4
VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V
100 VDS = 10 V
Pulsed
Pulsed
10 150
ID = 16 A
TA = 150˚C
75˚C 100
1 25˚C
−40˚C 8A
0.1 50
0.01 0
0.01 0.1 1 10 100 5 10 15 20
ID - Drain Current - A VGS - Gate to Source Voltage - V
200
3
150
VGS = 4.5 V 2
100
10 V
1
50
0 0
0.1 1 10 100 −50 0 50 100 150
ID - Drain Current - A Tch - Channel Temperature - ˚C
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10 VGS = 10 V
200
VGS = 4.5 V
0V
1
10 V
100
0.1
0 0.01
−50 0 50 100 150 0 0.5 1 1.5
Tch - Channel Temperature - ˚C VSD - Source to Drain Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS
10000 1000
VGS = 0 V td(on), tr, td(off), tf - Switching Time - ns VDD = 50 V
f = 1 MHz VGS = 10 V
Ciss, Coss, Crss - Capacitance - pF
RG = 0 Ω
tf
Ciss
1000 100
td(off)
td(on)
100 10
Coss
tr
10 Crss 1
0.01 0.1 1 10 100 0.1 1 10 100
VGS = 0 V
VGS - Gate to Drain Voltage - V
80 VDD = 80 V 8
50 V VGS
100 20 V
60 6
40 4
10
20 2
VDS
ID = 16 A
1 0 0
0.1 1 10 100 5 10 15 20 25
IF - Drain Current - A QG - Gate Charge - nC
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140
VGS = 20 → 0 V
60
1
40
VDD = 50 V
RG = 25 Ω
VGS = 20 → 0 V 20
0.1 Startimg Tch = 25˚C 0
0.01 0.1 1 10 25 50 75 100 125 150
L - Inductive Load - mH Starting Tch - Starting Channel Temperature - ˚C
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PACKAGE DRAWINGS (Unit: mm)
+0.2
1.5 −0.1
6.5 ±0.2 2.3 ±0.2
+0.2
1.5 −0.1
5.0 ±0.2 0.5 ±0.1 6.5 ±0.2 2.3 ±0.2
4 5.0 ±0.2
0.5 ±0.1
1.6 ±0.2
5.5 ±0.2
1.0 MIN.
1.8TYP.
10.0 MAX.
5.5 ±0.2
13.7 MIN.
1 2 3
1 2 3
7.0 MIN.
MIN.
1.1 ±0.2
2.0
0.7
0.9 0.8
1.1 ±0.2
2.3 2.3 MAX. MAX.
0.5 −0.1
+0.2 +0.2
0.5 −0.1 0.8
1. Gate
2.3 2.3
2. Drain
1. Gate
0.75
3. Source
2. Drain 4. Fin (Drain)
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Gate Diode
Gate
Protection Source
Diode
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
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• The information in this document is current as of August, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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