$i8901 Ring Demodulator/ Balanced Mixer Siliconix FEATURES BENEFITS ® High Third-Order Intercept Point © Wide Dynamic © <6% Device Matching Error Count Contact factory for Application Note AN 85-2. "DESCRIPTION The Si8901 Ring Demodulator/Balanced Mixer offers Significant improvement for HF mixer applications where the third-order harmonic distortion has been a problem When used as a commutation HF double-balanced mixer, the Si8901 provides a high-fidelity IF output with FUNCTIONAL BLOCK DIAGRAM © Low Harmonic Distortion © Reduced System Component PERFORMANCE COMPARISON APPLICATIONS © HF Mixer/Demodulator © HF Modulator/Up- converter Range typical conversion loss of 8 dB. Signal frequencies may be as high as 160 MHz. Available in an &pin TO-99 package, this device is specified over -85 to 125°C operating temperature range. PIN CONFIGURATION SUBSTRATE (CASE) ‘suBSTRATE (Order Numbers: Si8901A (TO-78) ‘SiB901Y (SO 14) ‘See Section 6 | spt Point (48m) 20 20] 0 2rd Order Input sw 1S 2% aS Power Local Ose. (+m SiliconixABSOLUTE MAXIMUM RATINGS. 318901 1. Reler to PROCESS OPTION FLOWCHART for adgitional information 2 The algabraic convention wheveby the most nega Vps Drain to Source 15V Ip Drain Current cess. 50 MA Vpp Dr to Substrate were DEV Operating Temperature ~55 to 125°C Vsg Source to Substrate 225V Storage Temperature ... . 765 to 150°C Vas Gate to Source -22.5Vto30V Power Dissipation (Package) verses B40 MW" Vea Gate to Substrate . 03 :V t0.30V Vap Gate to Drain “22510 30 y —* Derate § mW/C above 25% ELECTRICAL CHARACTERISTICS! 4 = 25°C PARAMETER symaot ies feet ee OMT Drain Sows Breakdown Votage avos Vos" Vou = SV. = 100A 5 | Source-Orain Breakdown Vollge avS0 Veo = Vou =-5 Vi lp = 100A 6 Drain-Substate Breakdown Votlage | BVDB Source Open. Vou = Wilg= 100A | 225 v Source-Subsirate Breakdown Volage | BVSB. Drain Open, Von = OV. lp = 10uA | 225 @ [_Tresnotd votiage Vine Vos = Var = Vow Ig = 1 0A’ Veg OVP on [1 pao © | Gate Leakage Gurren ‘ans Vou * Vay = 0¥, Vag = 30.0 2 | ua 5 Tp = 1OmA, Vay = OV. Vag "SV 0 | 78 ip = 10.A. Vag =OV. Vag? 10 2 Drain-Source “ON” Resistance fos (on) Ip = 10 MA, Voq = OV. Vag = 15 V 2 8 Ip =10mA, Vay = OV. Vag = 20 ® Resisonce Waching ‘os (on) Ig 230 mA, Van = OV. Vos = 5V a [7 LO-LO, Capacitance 6, Vos = OV, Vas = “55 Vs Vee 4V_ 44 PF 3 [conversion Loss 3 zu See Figure 1, Pig = 17 atm os [thre order mercept 738 iS, ‘Maximum Operating Freavency fess 200, Me nores Value 's 4 minimum, and the most positive value 6a maximum, i used in this data sheet 3 Typical values are for DESIGN AID ONLY, not guaranteed nor subject t0 production testing APPLICATION HINTS. Schematic of the basic commutation-type HF double- balanced mixer using resonant-gate excitation. Recom- mended reading is AN85-2 "A Commutation Double- Balanced MOSFET Mixer of High Dynamic Range.” Dimas wea] so00 is a0 ow ov i vs. Z -s000 5.000 wm 5000 ° 1 oco/Div First and Third Quadrant I-E Characteristics Showing Effect of Gate Voltage Leading to Large-Signal Overtoad Distortion. Figure 2THE Si8901 AND HIGH-FREQUENCY MIXERS A Synopsis Given a monolithic quad small-signal DMOS FET, our objective was to apply this product to a high-frequency (0.5 to 150 MHz) balanced mixer circuit and see what performance features would result. Since the FET has an inherent square-law transfer characteristic, low-distortion in mixing was expected; also, a high figure-of-merit was expected because the subject quad FET had both low ON-resistance and low inter-lead capacitance; finally, the required local oscillator power was predictably low because the FET is a voltage-controlled device. What is proffered is a new commutation mixer circuit which achieves mixing and frequency conversion by the switching action of a quad FET ring. Using the Si8901 in circuitry described herein will produce a high-dynamic-range high-frequency mixer with outstanding intermodulation performance and overload characteristics. The recommended circuit is capable of two-tone 3rd-order input intercepts exceeding +36 dBm with less than 50 milliwatts of local-oscillator drive. This intercept point says that two signals of —20 dBm will have 3rd-order intermodulation products greater than —110 dB below the intermediate-frequency output signal! The application note presents the theory and operation of commutation balanced mixers, It compares switching mixers to passive diode ring and active FET mixers; it examines frequency-selective filtering; and finally, novel/practical circuitry to achieve the required local oscillator driving voltage is presented. Since the Si8901 is uniquely suited to build a double-balanced mixer, the product data sheet and application note have been combined in this one document Siliconix