Circuits salids, Semiconductors and PN Junction Diode senciruit the current (1 through the battery willbe Innes TApril 15, 2023 (| wap, 100 10V @ 5A @ 1A © 25A @ 2A ‘Azzam diode of power rating 1.6 W is to be used as ‘alge regulator. Ifthe zener diode has a breakdown of {Vand ithasto regulate voltage fluctuating between 3V snd OY. The value of resistance R, for safe operation of Aide wil be: [April 10, 2023 (D)] R Regulated voltage B32 6) 22 (~ 02 (@ 32 liode has a forward bias resistance of 25 Qin the {April 10, 2023 (11) 1250 Semiconductor Electronics : Materials, Devices and Simple Given below are two statements: one 1s labelled as Agsertion A and the other is labelled as Reason Asser tion A; Diffusion current ina p-n junction is greater than the drift current in magnitude ifthe junction is forward biased. Reason : Diffusion current in a p-n junction is from the n-side to the p-side if the junction is forward biased. In the light of the above statements, choose the most appropriate answer from the options given below [April 6, 2023 (11)] (@ Both A and R are correct and & is the correct explanation of A (b) Both A and are correct but R is NOT the correct explanation of A (©) A iscorrect butR is not correct (@) A isnot correct but R is correct Match List I with List II: [Feb. 1, 2023 0] List List @® Intrinsic semiconductor ()Fermi-level near the valence band (B) n-type semiconductor (11) Fermi-level in the middle of valence and conduction band. © prtype semiconductor (IM) Fermi-level near the conduction band (\) Fermi-level inside the conduction band ‘Choose the correct answer from the options given below: (a) (A)-CD, (B)-@, (C)—), B)-@v) (&) (A)-@, (B)-), (C)— CID, (D)-CV). (©) (A)-@,®)- a), ©-(,(2)-Cv) @_(A)—@,B)-@,(C)- CI, D)-Cv), Choose the correct statement about Zener diode: [Feb, 1,2023(1D] (@ It works as a voltage regulator in reverse bias and behaves like simple pn junction diode in forward bias. (b)_Itworks a voltage regulator only in forward bias. (©) It works as a voltage regulator in forward bias and ‘behaves like simple pn junction diode in reverse bias (@_Itworks as a voltage regulator in both forward and reverse bias, The effect of increase in temperature on the number of electrons in conduction band (n,) and resistance of a semiconductor will be as: (Jan. 31, 2023 (D] (a) Both n,and resistance decrease {b) Both n, and resistance increase (©) n, inoreases, resistance decreases (@)_ng decreases, resistance increases Which of the following statement is not correct in the case of light emitting diodes? A. Itis aheavily doped p-n junction, (D) MetalsBids B._Itemits light only when it is forward biased. itis reverse biased. {emitted is equal to or slightly {ithe semiconductor used. from the options given below: [Jan. 29, 2023 (1) C_Itemits light only when it D._Theenergy ofthe light less than the energy gap o} Choose the correct answer @a @ B © or bolow are two statements : one is labeled as Assertion A and the other is labeted as Reason R “Assertion A: Photodiodes are used in forward bias usually for measuring the light intensity: Reason R: Forap-n junction diode, at applied vollage V the current in the forward bias is more than the current in the reverse bias for |V,| > # V = [Vol where V, is the threshold voltage and V, is the breakdown voltage. In the light of the above statements, choose the correct answer from the options given below [Jan 25,2023 (D)] (@) Both andRare trueand R is correct explanation A (b) Both A and R are true but R is NOT the correct ‘explanation A (© Aisfalse but Ris true (@ AistruebutRis false Statement I: When a Si sample is doped with Boron, it becomes P type and when doped by Arsenic it becomes N-type semi conductor such that P-type has excess holes and N-type has excess electrons. ‘Statement II : When such P-type and N-type semi- ‘conductors, are fused to make a junction, a current will ‘automatically low which can be detected with an externally “connected ammeter. In the light of above statements, choose the most appropriate answer from the options - given below. [Jan. 25,2023 (11)] - Both Statement Iand statement II are incorrect ‘Statement is incorrect but statement Il is correct ement I and statement II are correct ‘Tis correct but statement II is incorrect are preferably operated in for light intensity measurement. in the forward bias is more than the 'ap—n junction diode. ; choose the correct : (Jan. 24, 2023 (1) ut R is NOT the correct 14. 15. 16. U. 18, /SEXSESy Ifthe maximum Zener current is 25 mA, then the minj value of Rwillbe__@. Duly 29, 209, a) HM R pa ae I 20v| Identify the solar cell characteristics from the followin, options + [July 28, m0), I (a) (b) iy | ! lA ot Inthe circuit shown below, maximum zener diode current will be __mA. [July 26, 2 4k oT I 5 voz ve V,= 60: The energy band gap of semiconducting material to produce violet (wavelength = 4000 A). LED is eV. (Round off to the nearest integer) s [uly D) ‘Two ideal diodes are connected in the network as shown in In 10k _ figure, The equivalent resistance betweenAandBis 9. (July 2D) The circuit diagram used to study the characteristic curve of a zener diode is connected to variable power supply (0-15V ) asshown in figure. A zener diode with maximum potential V, = 10 V and maximum power dissipation of Theis Connected across a potential divider arrangement. le value of resistance Ry connected in series with the Zener diode to protect it from the damage is__ [une 30, rest, © DE )ne willbe 3 * 10% ms"! the value ofx is mass ofelectron =9 « 10! kg, charge on electron set PC) [June 29, 2022 (11)] Fo; using a multimeter to identify diode from electrical Foruseats, choose the correct statement out of the ori about the diode : [June 28, 2022 (1)] Aso terminal device which conducts current in @ oh directions. y ris two terminal device which conducts curent in © ge diection only. : ftdoes not conduct current gives an initial deflection which decays to zero. Tris three terminal device which conducts current in ne direction onlybetween central terminal and either ofthe remaining two terminals. ‘adener oftreakdown voltage V7=8V/and maximum zener arent, Izy = 10 MA is subjected to an input voltage eye 10V with series resistance R = 100Q. In the given ‘dreit R, represents the variable load resistance. The ‘aioofmaximum and minimum value of Ris 0 @ Ru tyune28, 2022 (IN| cuit the input voltage V, is shown in figure. itage of p-n junction diode (D, or D2) is following output voltage (V9) waveform “is correct? {June 28, 2022 (I1)] (shown in figure) in nt through the resister of 24, 25. 26. Wt. rcuits Li ty ti {June 27, 2022 aD] ‘The I-V characteristics of a p-n junction diode in forward bias is shown in the figure, The ratio of dynamicresistance, corresponding to forward bias voltages of 2V and 4v [June 26, 2022 (1)] respectively, is: @ 1:2 & 5:1 (© 1:40 7 i . ic 2 21442 Kade V (volt) —> The photodiode is used to detect the optiocal signals. These diodes are preferably operated in reverse biased mode because. [June 25, 2022 (D} (a) fractional change in majority carriers produce higher fractional change in minority carriers produce higher In the given circuit- the value of current J, will be In the given figure, each diode has a forward bias resistance forward bias current () forward bias current mA, (When R, = 1kQ) [June 24, 2022 (ID] of 30 Qand infinite resistance in reverse bias. The current fractional change in majority carriers produce higher © fractional change in minority carriers produce higher ‘3000 reverse bias current @ ¢ reverse bias current aus = ae saiia 1, will be: Dt er [Sep. 1, 2021 1] (@) 3.758 b 1300 (b) 235A een AW (© 2A 200 (@) 273A ee . Statement-I : By doping silicon semiconductor with pentavalent material, the electrons density increases. oa : The n-type semiconductor has net negative Pa ' [Aug. 26, 2021 (1) In the light of the above statements, choose the ne appropriate answer from the options given below : (@) Statement-lis true but Statement-I is false.8150 (b) Statement-Lis false but Statement-I1 is true, (e) Both Statement-I and Statement-II are true, (@) Both Statement-1 and Statement-I1 are false. 29. A zener diode of power rating 2W is to be used as a voltage regulator. Ifthe zener diode has a breakdown of 10 V and it has to regulate voltage fluctuated between 6 Vand 14 Vy the value of R, for safe operation should be a, INA, Aug. 27,2021 (1D R, Regulated Unregulnted i voltage voltage 30. For the given circuit, the power across zener diode is a.’ mW. INA, Aug. 26, 2021 (11)] 1k av Ina semiconductor, the number density of intrinsic charge ‘carriers at 27°C is 1.5 x 10'S/m?_ Ifthe semiconductor is doped with impurity atom, the hole density increases to 4.5 = 107 / m°. The electron density in the doped ‘semiconductor is 10%m?. [NA, July 25, 2021 (1D) 32. Inagiven circuit diagram, a SV zener diode along witha series resistance is connected across a 50 V power supply. ‘The minimum value of the resistance required, if the ‘maximum zener current is 90mAwillbe___ L R Ry INA, July 22, 2021 (1) situation in which reverse biased current of a cular P-N junction increases when itis exposed toa ‘wavelength < 621 nm. During this process, en- ‘in carrier concentration takes place due to of hole-electron pairs. The value of band gap [July 22, 2021 (1p) (©) 1eV (d)05eV below, calculate the value of I, {July 20, 2021 (1) n. The value of protective INA, July 20, 2021 (11) ab 16, 3. 38. 39. 40. 41, Nov The value of power dissipated across the zener diog (V, = 15V) connected in the circuit as show inthe figs isx* 10! watt. (Mare 16,2024 (1 =150 Bae, R900 The value of x, to the nearest integer, is In connection with thecircuit drawn below, the value of flowing through 2 kO resistor is 1048 2k sv [Feb 21 Zener breakdown occurs in a p-n junction havingp and n both : (Feb. 24,202 (@) lightly doped and have wide depletion layer (b) heavily doped and have narrow depletion layer (©) lightly doped and have narrow depletion layer (@) heavily doped and have wide depletion layer LED is constructed from Ga-As-P semiconducting material The energy gap of this LED is 1.9 eV. Calculate the wavelength of light emitted and its colour. [h=6.63 x 10-4 Jsande=3 x 108 ms~!] (@) 654 nm and red colour (Feb. (b) 1046 nmand blue colour (©) 1046 nmand red colour (@) 654 nmand orange colour ‘The circuit contains two diodes Dy each with’a forward resistance of 50. and with infinitereverse resistance. Ifthe battery voltage is 6 V, the current through the 120 Q resistance is mA. (Feb. 26,2021] y The zener diode has a V, = 30 V. The current pas through the diode for the following circuit is__™ 1ka 10v | D; 1002 | 4kg voltage of a photodiode, the ph increasing om unt magnitude © [Sep. 05, 2020 (1)] remains constant ‘ a .es initially and after attaining certain value, it decreases (@) Increases linearly (6 increases initially and saturates finally a s Mthe sae iit of current through the diode is 10mA. tr atteryoFeme 1S Vis used in the circuit, the value of imum resistance to be connected in series with the sje sothat the current does not exceed the safe itis (Sep. 03, 2020 (D] @ 302 @) S02 © 1002 Ww 200 ua smicondocter photodiode can detect a photon with a ‘savelength of 400 nm, then its band gap energyis: Planck's constant, /h= 6.63 * 10-94 J.s, speed offi c=3x108m/s_— (Sep. 03, 2020 (I1)] @ MeV @) 20eV (©) 1SeV @ 3.40V “6 Bub the diodes used inthe circuit shown are assumed t0 ‘ge ideal and have negligible resistance when these are ferward biased. Built in potential in each diode is 0.7 V. For the input voltages shown in the figure, the voltage (in YYolts) at point A is [NA 9 Jan. 2020] A V_312.7V av it fin the network is: [9 Jan. 2020 11] A and B, charged to the same in two different circuits as | If the charge on capacitors A is Q,and Qp respectively, then (Here logarithm) [9 Jan. 2020 I] iode is forward biased. it has a voltage drop of BEC RREe 48. 49. 50. 51. p151 The it shown below is working as a 8 V de regulated 2000 voltage source. When 12 V is used as input, the power 200 dissipated (in mW) in each diode yy Vv is; (considering both zener "" ey diodes are identical) [NA 9 Jan, 2020 11] In the figure, potential difference between A and B is: {7 Jan. 2020 11) 10K (a lov oe Wi — 4p (b) 5Vv cf ] (© 18V wv me Zim (@ zero uit, with a Zener Figure shows a DC voltage regulator diode of breakdown voltage = 6V. Ifthe unregulated input voltage varies between 10 V to 16 V, then what is the ‘maximum Zener current ? Is [12 Apr. 2019 1] — 4 (@) 2.5mA (b) 15mA (© 75mA ,=4k2 @) 35mA The figure represents a voltage regulator circuit using a Zener diode. The breakdown voltage of the Zener diode is 6V and the load resistance is Ry =4k. The series resistance ofthe circuitis R=1k. Ifthe battery voltage Vi varies from 8 Vto 16V, what are the minimum and maximum values of the current through Zener diode? [10 Apr. 2019 II] (@) 0.5mA;6mA ne (b) 1mA;8.5mA (©) 0.5mA;8.5mA ae (@) 1.5mA;8.5mA ‘The reverse breakdown voltage ofa Zener diode is 5.6 V in the given circuit. The current /, through the Zener is : [8 April 20191] @ 10mA 2000 v (b) 17mA ov 300.2. (© 1smaA x (@ 7mA8152 53, In the given circuit the current through Zener Diode is close to: {11 dan. 2019 1] (a) 00mA (b) 67mA (© 40ma & (@) 60m 54, The circuit shown below contains two ideal diodes, each with a forward resistance of $0.0. Ifthe battery voltage is 6V. the current through the 1000 resistance (in Amperes) is: [Mt Jon, 201911) D, 1500 (@) 0036 i> WW 759 @ em |} —_t<}___yww-— 00% Lt 9. 6V ‘55. For the circuit shown below, the current through the Zener diode is: [10 Jan. 2019 11] SkQ x 1. Ks0v | (© Zero) 14mA felectrons in a semiconductor is defined as the drift velocity to the applied electric field. If, semi , the density of electrons is, their mobility is 1.6m?/(V.s) then the Semiconductor (since it is an n-type ribution of holes is ignored) is close [9 Jan, 2019 1] © 040m (4) 020m conducting at 0.3 V and 0.7 V figure if Ge. diode 10kQ ATE 59. Inthe given circuit, the current through zener diode i: Online April 16,2015) (a) 2.5mA (b) 3.3mA. (o) 5.5m. (d) 64. (0s What is the conductivity ofa semiconductor samplehaving electron concentration of 5 « 10!* m3, hole concentration of 5 « 10! m°, electrom mobility of 2.0 m? Vl 5! ang hole mobility of 0.01 m2-V"! 5-1? (Online Aprit 8, 2017] (Take charge of electron as 1.6 « 10-!9C) (a) 1.68(Q-my! (b) 1.83(2-my! (© 0.59(-my! @ 1.20(0-my! 61, The V-I characteristic of a diode is shown in the figure, The ratio of forward to reverse bias resistance is [Online Aprit 8, 2017 wi Resistance Intensity of light © Simple diode, Zener diode, Solar cell, ight depenc i Suman Sner diode, Simple diode, Light dependet Fesistance, Solar cell eeture dep ies . pho temper nance Of Cur 6 dope Si in the femperature range 300-400 k, i fa dseribed by 12016) fo) Hiner inerease for Co, exponential decrease of (a) Linear decrease for Cu, linear decrease for $4 (0) Linear inerease for Cu, lear nerease for Si imerease for Cu, exponential inet efor Si au An experiment is performed to determine the 1 V acteristics of a Zener diode, which hay a p eof 1000, anda maxinnun power of espa fating of IW. Theminimum voltage range ofthe inthecirouit is: 1Online April 9, 2016) @ o-sv (b) 0 MV 0-RV @) 0 av 45, Inanunbiased n-p junction electrons diffuse from n region toperegion because : {Online April 10,2015} {@) holesin p-region attract them {&) electrons travel across the junction due to potential difference 40) only clectrons move from n to p region and not the vice-versa {@) electron concentration in n-region is more compared tothat in p-region ‘The forward biased diode connection is: ora light in visible region of electromagnetic ‘energy band gap in the range of: é [Online April 12, 2014] (b) 05eV100.8eV @_1.7eV103.00V d to a battery and a load as {Online April 11,2014) ™, “aus 2. (a) i ; v 1 OF OF ‘The circuit has two oppositively connected ideal diodes parallel. What is the current flowing in the circuit?(2006) be 42. 79. When p-n junction diode is forward biased then (a) both the depletion region and barrier height are (b) region is widened and barrier height j [2004] © n region is reduced and barrier height increased iq (a) Both the depletion region and barrier height increased 80. A strip of copper and another of germanium are cook from room temperature to 80K. The resistance of (2003 (a) cach of these decreases (b) copper strip increases and that of germani decreases (©) copper strip decreases and that of germanium incr (@)_ each of these increases The difference in the variation of resistance wi temeperature in a metal and a semiconductor ari essentially due to the difference in the 2003} (@) crystal sturcture (©) variation of the number of charge carriers temperature (©) type of bonding (@)_ variation of'scattering mechanism with tempera 82. Inthe middle of the depletion layer ofa reverse- bi ‘p-n junction, the (@) electric field is zero (b) potential is maximum (©) clectricfield is maximum (@)_potential is zero 83, At absolute zero, Si acts as (@) non-metal (b) metal (© insulator (@_ none of these 84, Byincreasing the temperature, the specific resistance of conductor and a semiconductor 02] (a) increases for both (b) decreases for both (©) increases, decreases (d) decreases, increases ‘The energy band gap is maximum in [2003] (@) metals (b) superconductors (©) insulators (@)__ semiconductors (200% et Junction Transistor 86. From the given transfer characteristic ofa transistor in’ configuration, the value of power gain of this contigurati is 10%, for % 10 kO and Re = 1 KO. The value of x | 3, 2023 I= (mA) f 50 40 30 20 10. (0,0) 100 200 300 400 S00sn common emitter (CE) transistor the coll joan fianiges from 5 mA to 16 mA for the aes cureturrent from 100 HA and 200 WA, respectively. The batrent gain of transistor is + {April 12,2023 (1)] om 9 © 20 do Fora given transistor amplifier circuit in CE configuration 8. VYoo= 1 VGRe=1KA,Ry= 100 KO and = 100. Value ot jase current I, is LApril8, 2023 a] () 1,=0.10 nA 100 pA @ 1,=10pa 9. Given below aretwo statements: (Jan. 31,2023 (I1)] : Elna typical transistor, all three regions emitter, collector have same doping level. fement Ii: In a transistor, collector is the thickest and ‘the thinnest segment. slight of the above statements, choose the most propriate answer from the options given below. Tand Statement Il are correct Land Statement Il are incorrect is incorrect but Statement II is correct Tis correct but Statement Il is incorrect wr with current gain f) = 100 in common 'is shown in figure. The output volt- [July 28, 2022 (1] © 10V @ 100V ‘voltage of 8Y, the collector ) will be: [July 27,2022 (1)] @ ‘a transistor in CE {resistor of kis: 93. 95. 96. 97. B155 100 200 300 400 Ig(uA) [July 26, 2022 (D] A transistor is used in an amplifier cireuitin common emitter mode. If the base current changes by 100 pA, it brings 2 change of 10 mA in collector current. Ifthe load resistance is 2 kO. and inputresistance is 1 kO_, the value of power gain, is x x 104, The value of x is [June 29, 2022 (D} Given below are two statements : One is labelled as Assertion A and the other is labelled as Reason R. Assertion A : n-p-n transistor permits more current than a p-n-p transistor. [Sune 28, 2022 (D] Reason R : Electrons have greater mobility as a charge cartier. Choose the'correct answer from the options given below: (a) Both A and R true and R is correct explanation of A. (b) Both A and R are true but R is NOT the-correct explanation of A. © Aistrue but Ris false. @ Ais false but Ris true. For a transistor to act as a switch, it must be operated in (@) Active region [June 27, 2022 ID} (b) Saturation state only (©) Cut-off state only @ Saturation and cut-off state ‘The positive feedback is required by an amplifier to act an oscillator. The feedback here means : [June 26, 2022 ID} (@) External input is necessary to sustain ac signal in output. (b) A portion of the output power is returned back to the input, (©) Feedback can be achieved by LR network. (@) The base-collector junction must be forward biased. Inan experiment of CE configuration of n-p-n transistor, the transfer characteristics are observed as given in figure. June 25, 2022 (ID]Bi56 Too 200-300 I,(HA) Ifthe input resistance is 200 Q and output resistance is {60 the voltage gain in this experiment will be 98, _Atransistor is used in common-emitter mode in. an amplifier circuit, When a signal of 10 mV is added to the base-emitter voltage, the base current changes by 10 414 and the collector current changes by 1.5 mA. The load resistance is 5 42 The voltage gain of the transistor will be l ( 99, IFV,.and Vp are the input voltages (either SV or OV) and Vy is the output voltage then the two gates represented in the ANDandORGate (6) ORand NOT Gate (© NAND andNOR Gate (f) AND and NOT Gate : is arranged as shown in figure. The output voltage (©) ap=1 ‘A transistor is connected in common emitter cir 5. The typical output Ic (mA) characteristics curve 8 for a transistor working 6 in theb common- 4 emitter configuration is 2 shown in the figure. o 108. An npn transistor operates as a common emitter amplifi configuration, the collector supply voltage is 10 V and the voltage drop across a resistor of 1000 © in the collecto circuit is 0.6 V. Ifthe current gain factor (B) is 24, then th base current i HA. (Round off to the Ne Integer) INA, Jul 021 04, Anmnpn transistor operates as a common emitter ampli with a power gain of 10°. The input circuit resistance ig 100 Q.and the output load resistance is 10k. The comma ‘emitter current gain ‘B” will be (Rounded offt the Nearest Integer) arch 18, 2021 ij The estimated current gain from the figure is, 2.4 6 8 10:12 14 (eq) in volts The transfer characteristic curve of a transistor, ba input and output resistance 100 Q and 100 k Q respect is shown in the figure. The Voltage and Power gain, respectively : @) 2.5x104,2.5x106 (b) 5x104, 5x10 1 (300, 15) © sxiosxi08 (200, 10) (a) 5x104,2.5x108 T,(4ay— with a power gain of 60 dB. The input circuit resistance 1009 and the output load resistance is 10k. The: emitter current gain B is : [10 Apr. 2019 (@) 10 ob) 0 (© oxi? @ 108transistor is used in common Pyifer with |kO load resistance, Signa voltage of applied across the base-emitter. Tis produces a3 Mange inthe collector current and 15 j1A change in vee ourrent ofthe amplifier, The input resistance and soltage gain are: [9 April 2019 1] fo) 033k0,15 (©) 067K, 300 (@) 067822,200 (@) 033k2, 300 ¢ eeamon enter air ict, bil using an spn 0A cee asehown inthe figure tse current gin i 250, = 1k Qand Voc = 10V. What is the minimum base Re atfor Veto reach saturation? [8.Apr.2019 1] (@) dna Ry Re ) 100A “ No em 7s Ven @ 10pA ‘In the figure, given that Vy. supply can vary from 0 to SOV, Voc = 5, B, J, R= 100K, Ro= 1 KQand ‘Vge=10V, The minimum base current and the input -which the transistor will go to saturation, will sTespectively : [12 Jan. 2019 IN] (b) 20nAand3.5V @ 20pAand2.8V emitter configuration with suitable bias, itis ‘is the load resistance and Rpg. is small signal (input side). Then, voltage gain, current -gain are given, respectively, by: Tpplcy gare respectively base, collector , {Online April 15, 2018] pri, Ale pA Rgg’ Ala” Roe 2 Ry lector current is: {Online April 9, 2017] (©) 0.69mA (d) 69 mA ‘amplifier circuit using an.n-p-n ‘between the input and the {Online April 2, 2017] © 44 @ © REESE) OKT Bie7 15. For a common emitter configuration, if & and B have 116. 117. 18. 119. 120, 121, their usual meanings, the incorrect relationship between and fi is: {2016} p i © TR oie ie 1 (3) are (d)_ None of these a f ‘The ratio (R) of output resistance ty, and the input resistance r, in measurements of input and output characteristics ofa transistor is typically in the range = {Online April 10,2016] (@) R~ 102-108 (b) R~1-10 (©) R~O1-1.0 (d) R-O.1-0.01 ‘An n-p-n transistor has three leads A, B and C. Connecting B and C by moist fingers, A to the positive lead of an ammeter, and C to the negative lead of the ammeter, one finds large deflection. Then, A, B and C refer respectively to: [Online April 9.2014] (@ Emitter, base and collector (b) Base, emitter and collector (©) Base, collector and emitter (@ Collector, emitter and base. ‘Aworking transistor with its three legs marked P, QandR is tested using a multimeter. No conduction is found between P and Q. By connecting the common (negative) terminal of the multimeter to R and the other (positive) terminal to Por O, some resistance is seen on the multimeter. ‘Which of the following is true for the transistor? {2008} @_Itis an npn transistor with R as base (b) It isa pnp transistor with R as base (©) Itis apnp transistor with R as emitter (@)_Itisan npn transistor with R as collector TInacommon base mode of a transistor, the collector current {5.488 mA for an emitter current of'5.60 mA. The value of the base current amplification factor (B) willbe (2006) @ # &) 0 © st @ 8 Ina common base amplifier, the phase difference between the input signal voltage and output voltage is [2005] i 4 ‘When npn transistor is used as an amplifier @)_ electrons move from collector to base (b)_ holes move from emitter to base (c) electrons move from base to collector (@)_ holes move from base to emitter @« (b) © @0 x (2004) . The part of @ transistor which is most heavily doped to produce large number of majority carriers is (@ emmiter (b) base (©) collector (@ can be any of the above three. [2002]aise (Ty eee, LES The Hoyle cperations performed by the given dipitel cireyp |Logle Gatow Iv equivalent to (April 11,2023 cayp ee JApeit 14, 20200) () AND (b) NOR) OF (4) NaN 126, For the logic circuit shown, the output seavetorm at ¥ jy WApeit 4, 2023 (bp 121. Bor the following cirouit and piv the correct option fe cutput'Y “> i= ee a” 4 f —r 127, Name the logic gato equivalent to the diagram attached sv April 2340 (@) OR (b) NOR (©) NAND «ANDmonductor Electronics : Materials, CEES waveform of the given logical 1 m ‘The output Circuit forthe 1.31. The logic a € given circi : Nee isA end Bas chown below logic gate equivalent to the given circuit diagram is : following inputs A as shown below, is [Jan 24, 2023 (11)] Ho ty ‘ Ay a | (a) OR ral. i (Glow Lf (b) NAND Sale iJ ; . 2} * (o Nor \ oyu | 8159 fe () AND 112, Alopie gate circuit hastwo inputs A.and Fsand output ¥. The b ‘s 4 mei e ats | Jan. 20,2023 09 voltage waveforms of A, Band ¥ are shown below A =) ! i ¥ e i i ; ‘ a i: { The logic gate circuit is [Suty 27, 2022 (8)f atte t (a) AND gate (b) OR gate (©) NOR gate (@) NAND gate 133. In the following circuit, the correct relation between output (Y) and inputs AandB willbe: [June 28, 2022 (1)| Y aes Bee = SV Y@A (@) Y=4B (b) Y=A+B (0) Y=4B (@) ¥=4 134. Identify the correct Logic Gate for the following output (¥) of two inputs A and B. 022 (DI rai Jogic gates combination, the correct truth ; [Jan. 29, 2023 (| @ (bo) © @ SS Ss I- —- — o|xlo — — olx8160 TE }own in the figure, ifinput Aan, 135, Identify the logic operation performed by the given cir- 14/1. Inthe logie circu ie cuit : [June 25, 2022 (1) Oto 1 respectively, the output at Y would be'y, a— The valoe of x aa! [March 16,2021 qyy y Pa ee Dro se | ete. (me 136, es sanelan alan oftheinputsA, 142+ The following logic gate is equivalent to: Bare (0, 0), (0,1), (1, OVand (1, 1). The output ¥ for this joel, (Mareh 16,2021 apy sequence will be: [Aug, 31, 2021 (D1 pias @1L010 5 ' ©) 01,01 ? —C| » © LLL0 e (a) ORGate () NAND Gate @ 0.0.1.1 (©) NORGate (@) ANDGate 187. Identify the logic operation carried out by the given cireuit:- 43, The truth table for the following logic circuit is [Aug. 26, 2021 (D] Fe Yr () OR @) AND () NOR @) NAND . Bs. Four NOR gates are connected as shown in figure. The [Feb.25, 2021 ‘ruth table forthe given figure is: [Aug. 26, 2021 (11)] ) [aEIRS Onlasairl . 0 0j0 0 ojf ey oift o 1/0 $40.14), 1 0/1) 1 ito rilo es © [A BlY @ [A-BlY fe 0 Oj! 0 0/0 zy o 10 oljt z 17.0) 0 1 0}0 \ uma lat rih es 144, Identify the operation performed by the circuit given below: 1 [Sep. 04, 2020 GD 0 a—L) »—_ 0 ; sf) »——>) >>- @ NAND @) OR @ AND @ NOT the following digitial circuit, what will bethe ‘ourputat 145, ‘when the input (4, Bare (1,0) (0% OD: Sep. 02,20. ep. 4 oe" B @) 0,0,1,0 (&) L011 © 11,01 @ 01,00apiimecnacenl ug Boolean relation at the output stage-¥ for the following sir 18, 20201 ‘s te y 8 @ FW 448 © 4B ww yur Ante given circuit vale of Pi: AR - 2020 11] @e () togglesbetween O and 1 (0 willnot execute @! 148. Which of the following gives a reversible operation? {7 Jan. 2020) gate equivalent to the given logic circuit is: [9 Apr. 2019 0} @ AND [12 Jan. 2019 1] DY = the given logic gate circuit [10 Jan. 2019 1] LST cuits e161 Xe Oey, () X=1,Y=1 © X=1,¥=0 (&) X=0,¥=0 152. Truth table for the given circuit will be [Online Aprit 15, 2018] (x _y|z @* Y|% wx ylz 2 0 olf oho ‘rai os x OL (ere os o1ls vols 10/0 4 ofr 1 ol1 Lot) ORE epee a the bait 153. Ifa, b, ¢, dare inputs toa gate and x is its output, then, as per the following time graph, the gate is: 2016) JUUUUL Ea (a) OR (b) NAND (© NOT @ AND 154, The truth table given in fig. represents : [Online April 9, 2016} @ oR-Gate [ALBIY o/0)\0 () NAND-Gatel-9 [1] 1 (© AND-Gate |! | 9]! Ljiit (@ _NOR-Gate 155. The figure shows a combination of two NOT gates and a NOR gate, {Online May 26, 2012] A at ‘The combination is equivalent toa (a) NANDgate (b) NOR gate (©) AND gate (@) ORgate8162 ATS 156. Which one of the following is Input ' NOR gate? ! ' ' Het est @ Input B , i rea © Yeas @ rea Output is + The output of'an OR gate is connected! to both the inputs ofa NAND gate, The combination will serve as a @ PS @ NOT gate ©) NOR gate 2011 RS] ISS The combination of gates shown below yields |2010) ' fa) ORgate “qo © Le © @) NOT gate [> oe ! ale ' © AND gate W) ORgate (oP a 1 1 i t ©) NOR gate 160. In the circuit below, 4 and B represent two inputs and C @ NANDgae "S represents the output — 159. The logic circuit shown below has the input waveforms, Cc “A and *B* as shown, Pick out the correct output waveform, [2009 Fs The cireuit represents (@) NOR gate ® (©) NAND gate @ oOele Ie | coo Laant ey Las] ) [az] Lizz] ca) [3 ee te at of ea 23 24 2s Be 27