Simulation of TOPCoRE Solar Cells: Impact of Boron Doping

Parameters of p+ Layer Localized under Front Side Metal

Contacts on Cell Performance

1. SUMMARY
In this work, we present the modeling properties of a tunnel oxide passivated
contact with rear emitter structure (TOPCoRE) on p-type c-Si. Generated from tunnel
oxide passivated contact solar cell (TOPCon), this structure offers a good balance
between low surface recombination and efficient current extraction pathways.
Additionally, it surpasses TOPCon by mitigating issues related to parasitic
absorption and lateral current transport losses. The examination carried out in this
study is based on numerical simulation using Quokka3. Our investigation focuses on
the borondoping profile of the hole-selective charge carrier layers under the front side
metal contacts of TOPCoRE cell. The optimization of the doping profile consists of
two main parameters, the peak doping concentration, and the depth of the bulk reach.
Due to this optimization, a 26.14% efficient TOPCoRE solar cell can be obtained.

2. INTRODUCTION
In the last decade, we have seen significant improvement in the efficiency of
TOPCon solar cells. This structure still suffers mostly from front-side metal contact
recombination and sidelong current transport pathways. Regarding these issues, a
selective charge carrier layer under the front contracts is considered a favorable
solution. Improving steps are developed further by placing the emitter on the rear
side instead of the front side as in the classic TOPCon structure. As a result of the
above-mentioned changes, the upgraded design, TOPCoRE, has fewer optical losses
since the cell front side has boron doping localized only under the front side contacts.
Additionally, the emitter placed on the rear side reduces the lateral current transport
losses [1]. Utilizing Quokka3 simulator, this study points out the impact of the
doping parameters of the hole-selective layers under the front side contacts on the
performance parameters by considering the boron peak doping concentration and the
depth of a Gaussian function profile.
3. SIMULATION METHOD
The simulation carried out in this study consists of a 2 cm x 2 cm TOPCoRE
solar cell (FIG. 1(a)) that is front-illuminated under the standard spectrum AM 1.5G.
For the cell optimization, we have varied the boron doping parameters under localized
front contacts in the range of 1019-1021 cm-3 for the peak concentration and 0.1-0.8
µm for the depth. Other parameters stay the same as will be mentioned in Table I. To
make the simulation executing time of an acceptable range, optimization is achieved
considering a unit area that includes half the width of two fingers and the distance
between them. In the optimization simulation, the busbars’ effect is not considered.
Once the optimal doping profile is found, the full area of the cell is simulated again,
and the busbars’ impact is considered. To set the optical parameters, the wavelength-
dependent external front surface transmission (Text) is obtained by OPAL 2 after
configuring the front side passivation layer (Al2O3 layer of 10 nm thickness) and a
double layer antireflecting coating (SiNx and MgF2 of 10 nm and 90 nm thickness,
respectively) for the front side [1]. The front side has metal fraction of 1% as shown
in FIG. 1(b) while the rear side has a full-area metal.

FIG. 1. (a) Simulated TOPCoRE Structure on p-type Si Bulk (b) Front Metal Grid
TABLE I. Simulation Parameters for Quokka 3
Type of Parameters Value Ref
Front Side Transmission Obtained by OPAL 2
Z0 30.69 [2]
Optical Parameters
Zinf 1.567 [2]
Zp 1.631 [2]
External Circuit Rshunt 100000 Ωcm2 [1]
Wafer Thickness 180 µm
Resistivity 1 Ωcm
Defect Density 109 cm-3 [2]
Defect σn 5.5·10-14 cm2 [3]
Defect σp -15
2.9·10 cm 2
[3]
Bulk
Auger Recombination Model Si-Richter2012 [2]
Radiative Recombination Model Si-Nguyen2014 [2]
Mobility Model Si-Klaassen1992 [2]
Intrinsic Carrier Concentration Model Si-Couderc2014 [2]
Bandgap Narrowing Model Si-Schenk1998 [2]
Finger pitch 953 µm
Front Metal Finger width 11 µm [1]
Metal Rsheet 3.6 mΩ [1]
p+ Layer Contact Resistivity 0.3 mΩ cm2 [1]
J0,pass 1 fA/cm2 [1]
Rear Metal
Contact Resistivity 50 mΩcm2 [1]

4. RESULTS
To understand the impact of boron doping profile localized under the front
contacts, the dependency of performance parameters (Voc, Jsc, FF, η) on peak
concentration and profile’s depth is observed as presented in FIG. 2. For a good
selective layer, a good balance between the minority recombination rates and the
majority transportation levels is required. As illustrated in the contour plots, there is a
trade-off between high doping concentration and high depth value. Higher depth
profile is translated into more bulk recombination while higher concentration means
more chargecarrier selectivity.
 All the parameters seem to have the identical trend. However, FF is less
dependent on the profile depth compared to other parameters. The optimal
performance is found for a Gaussian doping profile with Npeak of 1019 cm-3 and depth
of 0.4 µm.

FIG. 2. Performance Dependency on Peak Doping Concentration and Doping Profile Depth (a) open-
circuit voltage (b) short-circuit current density (c) fill factor (d) efficiency

After finding the optimal doping conditions, the proposed structure is simulated in
its full-area including the busbars effects and a non-active area of 0.5 cm in all
directions. In the optimized simulation we obtained a Voc, Jsc, FF, η of 736.7 mV,
42.2 mA/cm2, 84.09%, and 26.14% respectively.

5. CONCLUSION
In this work we have theoretically examined a TOPCoRE solar cell on a p-type
wafer using Quokka3 simulation. The focus of the work was the investigation of
performance parameters’ dependency on the boron doping profile of the hole-selective
layer under the front side metal contacts by considering the boron peak concentration
and the profile’s depth. The simulation study revealed that for a boron doping profile
with peak concentration of 1019 cm-3 and depth of 0.4 µm, a 26.14% effective
TOPCoRE solar cell can be obtained. In the next set of simulations, in order to
minimize the efficiency gap toward the theoretical value, we will study the impact of
rear side on the performance parameters. For further optimization, a bifacial
TOPCoRE structure with textured rear side and a dielectric layer between the n+
TOPCon stack and the metal contact will be investigated.

REFERENCES

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