The net result is an expansion of the discrete levels of possible energy states

for the valence electrons to that of bands as shown in Fig. 1.4.

The ionization is the mechanism whereby an electron can absorb

sufficient energy to break away from the atomic structure and enter the

conduction band. You will note that the energy associated with each

electron is measured in electron volts (eV). The unit of measure is

appropriate since

𝑊 = 𝑄𝑉 𝑒𝑉

Substituting the charge of an electron and a potential difference of 1 volt

into above Eq. will result in an energy level referred to as one electron volt.
Since energy is also measured in joules and the charge of one electron
1.6 × 10−19 coulomb,

1 𝑒𝑉 = 𝑊 = 𝑄𝑉 = (1.6 × 10−19 ). (1𝑉) = 1.6 × 10−19 𝐽

At 0 K or absolute zero (273.15°C), all the valence electrons of

semiconductor materials find themselves locked in their outermost shell

of the atom with energy levels associated with the valence band of Fig. 1.4.
However, at room temperature (300 K, 25°C) a large number of

valence electrons have acquired sufficient energy to leave the valence

band, cross the energy gap defined by Eg in Fig. 1.4 and enter the

conduction band.

BASIC PHYSICS By: ANWER J. AL-HASAN

8
 We will find in Section 1.3 that if certain impurities are added to the

intrinsic semiconductor materials, energy states in the forbidden bands

will occur which will cause a net reduction in Eg for both semiconductor

materials—consequently, increased carrier density in the conduction band

at room temperature!.

Intrinsic:

In term of energy bands model, semiconductors can defined as that

material which have almost an empty conduction band and almost filled
valence band with a very narrow energy gap (≈1eV). Common examples
of such semiconductors are germanium and silicon which have forbidden
energy gaps of 0.7eV and 1.1eV respectively. Another example for

BASIC PHYSICS By: ANWER J. AL-HASAN

9