2N3904

NPN Silicon
Elektronische Bauelemente General Purpose Transistor

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

TO-92

COLLECTOR
3

ƔFEATURES 2
BASE
. Power Dissipation 1
PCM: 625 mW (Ta=25к) 1 2
3
. Collector Current EMITTER
ICM: 200 mA
. Collector - Base Voltage
V(BR)CBO: 60 V

ƔELECTRICAL CHARACTERISTICS (T A = 25 к unless otherwise specified)

Parameter SYMBOL TEST CONDITIONS Min. Typ. Max. UNIT
Collector - Emitter Breakdown Voltage V(BR)CEO IC = 1 mA, IB = 0 A 40 - - V
Collector - Base Breakdown Voltage V(BR)CBO IC = 100 µA, IE = 0 A 60 - - V
Emitter - Base Breakdown Voltage V(BR)EBO IE = 100 µA, IC = 0 A 6 - - V
Collector Cut-Off Current ICBO VCB = 60 V, IE = 0 A - - 0.1
Collector Cut-Off Current ICEO VCE = 40 V, IB = 0 A - - 0.1 µA
Emitter Cut-Off Current IEBO VEB = 5 V, IC = 0 A - - 0.1
hFE(1) VCE = 1 V, IC = 10 mA 100 - 400
DC Current Gain -
hFE(2) VCE = 1 V, IC = 50 mA 60 - -
Collector - Emitter Saturation Voltage VCE(sat) IC = 50 mA, IB = 5 mA - - 0.3 V
Base - Emitter Saturation Voltage VBE(sat) IC = 50 mA, IB = 5 mA - - 0.95 V
VCE = 20 V, IC = 10 mA
Transition Frequency fT 300 - - MHz
f = 100 MHz
Operating and Storage Junction Temperature Range TJ, TSTG - -55 ~ +150 к

ƔCLASSIFICATION OF hFE(1)
Rank O Y G
Rang 100 ~ 200 200 ~ 300 300 ~ 400

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual

01-Jun-2002 Rev. A Page 1 of 3

 2N3904
NPN Silicon
Elektronische Bauelemente General Purpose Transistor

ƔTYPICAL CHARACTERISTICS

+3 V +3 V
DUTY CYCLE = 2% 10 < t1 < 500 ms t1
300 ns +10.9 V
+10.9 V DUTY CYCLE = 2%
275 275

10 k 10 k
0
-ā0.5 V
< 1 ns CS < 4 pF* CS < 4 pF*

-ā9.1 V′
< 1 ns

* Total shunt capacitance of test jig and connectors

Delay and Rise Time Storage and Fall Time

Equivalent Test Circuit Equivalent Test Circuit

2.0
h FE, DC CURRENT GAIN (NORMALIZED)

TJ = +125°C VCE = 1.0 V

1.0 +25°C

0.7
0.5 -ā55°C

0.3

0.2

0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)

DC Current Gain

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual

01-Jun-2002 Rev. A Page 2 of 3

 2N3904
NPN Silicon
Elektronische Bauelemente General Purpose Transistor
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)

1.0
TJ = 25°C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA

0.6

0.4

0.2

0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)

Collector Saturation Region

1.2 1.0
TJ = 25°C
1.0 VBE(sat) @ IC/IB =10 0.5 +25°C TO +125°C
qVC FOR VCE(sat)
COEFFICIENT (mV/ °C)
V, VOLTAGE (VOLTS)

0.8 0 -ā55°C TO +25°C

VBE @ VCE =1.0 V
0.6 -ā0.5
-ā55°C TO +25°C
0.4 -ā1.0
VCE(sat) @ IC/IB =10 +25°C TO +125°C
0.2 -ā1.5 qVB FOR VBE(sat)

0 -ā2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

“ON” Voltages Temperature Coefficients

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual

01-Jun-2002 Rev. A Page 3 of 3