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  • Transys: TO-92 Plastic-Encapsulated Transistors

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    Jhon Arenas
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    This document provides specifications for a TO-92 plastic-encapsulated PNP transistor (2SA608). It lists key electrical characteristics including a collector current of -100 mA, collector-base voltage breakdown of -40 V, and an operating junction temperature range of -55°C to +150°C. The summary also notes that the document gives details on parameters like DC current gain, collector-emitter saturation voltage, and transition frequency.

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    transistor

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    A608-TRANSYS

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    This document provides specifications for a TO-92 plastic-encapsulated PNP transistor (2SA608). It lists key electrical characteristics including a collector current of -100 mA, collector-base voltage breakdown of -40 V, and an operating junction temperature range of -55°C to +150°C. The summary also notes that the document gives details on parameters like DC current gain, collector-emitter saturation voltage, and transition frequency.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    27 views1 page

    Transys: TO-92 Plastic-Encapsulated Transistors

    Uploaded by

    Jhon Arenas
    This document provides specifications for a TO-92 plastic-encapsulated PNP transistor (2SA608). It lists key electrical characteristics including a collector current of -100 mA, collector-base voltage breakdown of -40 V, and an operating junction temperature range of -55°C to +150°C. The summary also notes that the document gives details on parameters like DC current gain, collector-emitter saturation voltage, and transition frequency.

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    © All Rights Reserved
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    Transys

    Electronics
    L I M I T E D

    TO-92 Plastic-Encapsulated Transistors

    2SA608 TRANSISTOR (PNP) TO-92

    FEATURES
    1. EMITTER

    Power dissipation
    2. COLLECTOR
    DataSheet4U.com PCM : 400 mW (Tamb=25℃)
    3. BASE
    Collector current
    ICM : -100 mA
    1 2 3
    Collector-base voltage
    V(BR)CBO : -40 V
    Operating and storage junction temperature range

    TJ, Tstg: -55℃ to +150℃

    ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

    Parameter Symbol Test conditions MIN TYP MAX UNIT

    Collector-base breakdown voltage V(BR)CBO Ic=-100µA, IE=0 -40 V

    Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA, IB=0 -30 V

    Emitter-Base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V

    Collector cut-off current ICBO VCB=-25V, IE=0 -1 µA

    Emitter cut-off current IEBO VEB=-4V, IC=0 -1 µA

    DC current gain hFE VCE=-6V, IC=-1mA 60 560

    Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB=-5mA -0.5 V

    Transition frequency fT VCE=-6V, IC=-10mA 180 MHz

    Collector output capacitance Cob VCB=-6V, f=1MHz 7 pF

    CLASSIFICATION OF hFE
    Rank D E F G

    Range 60-120 100-200 160-320 280-560

    Free Datasheet http://www.nDatasheet.com

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