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bq28z610
ZHCSEJ9C – APRIL 2014 – REVISED NOVEMBER 2017
2 应用 器件信息(1)
器件型号 封装 封装尺寸(标称值)
• 平板电脑
bq28z610 VSON (12) 4mm x 2.5mm
• 便携式和可穿戴式健康设备
(1) 如需了解所有可用封装,请参阅数据表末尾的可订购产品附
• 便携式音频设备 录。
– 无线(蓝牙)扬声器
简化原理图 无线(蓝牙)扬声器应用
Pack+
方框图
10 M 10 M
Fuse
Pack–
1 to 10 mΩ Copyright © 2016, Texas Instruments Incorporated
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SLUSAS3
bq28z610
ZHCSEJ9C – APRIL 2014 – REVISED NOVEMBER 2017 www.ti.com.cn
目录
1 特性 .......................................................................... 1 7.22 Data Flash............................................................... 9
2 应用 .......................................................................... 1 7.23 Current Protection Thresholds ................................ 9
3 说明 .......................................................................... 1 7.24 Current Protection Timing ..................................... 10
7.25 N-CH FET Drive (CHG, DSG)............................... 11
4 修订历史记录 ........................................................... 2
7.26 I2C Interface I/O .................................................... 11
5 说明 (续) .............................................................. 2
7.27 I2C Interface Timing .............................................. 11
6 Pin Configuration and Functions ......................... 3
7.28 Typical Characteristics ......................................... 13
7 Specifications......................................................... 4
8 Detailed Description ............................................ 16
7.1 Absolute Maximum Ratings ...................................... 4
8.1 Overview ................................................................. 16
7.2 ESD Ratings ............................................................ 4
8.2 Functional Block Diagram ....................................... 16
7.3 Recommended Operating Conditions....................... 4
8.3 Feature Description................................................. 17
7.4 Thermal Information .................................................. 5
8.4 Device Functional Modes........................................ 21
7.5 Supply Current .......................................................... 5
9 Applications and Implementation ...................... 23
7.6 Power Supply Control ............................................... 5
9.1 Application Information............................................ 23
7.7 Low-Voltage General Purpose I/O, TS1 ................... 5
9.2 Typical Applications ............................................... 23
7.8 Power-On Reset (POR) ............................................ 6
7.9 Internal 1.8-V LDO .................................................... 6 10 Power Supply Requirements ............................. 26
7.10 Current Wake Comparator...................................... 6 11 Layout................................................................... 26
7.11 Coulomb Counter .................................................... 6 11.1 Layout Guidelines ................................................. 26
7.12 ADC Digital Filter .................................................... 7 11.2 Layout Example .................................................... 28
7.13 ADC Multiplexer ...................................................... 7 12 器件和文档支持 ..................................................... 29
7.14 Cell Balancing Support ........................................... 7 12.1 文档支持................................................................ 29
7.15 Internal Temperature Sensor .................................. 8 12.2 接收文档更新通知 ................................................. 29
7.16 NTC Thermistor Measurement Support.................. 8 12.3 社区资源................................................................ 29
7.17 High-Frequency Oscillator....................................... 8 12.4 商标 ....................................................................... 29
7.18 Low-Frequency Oscillator ....................................... 8 12.5 静电放电警告......................................................... 29
7.19 Voltage Reference 1 ............................................... 8 12.6 Glossary ................................................................ 29
7.20 Voltage Reference 2 ............................................... 9 13 机械、封装和可订购信息 ....................................... 29
7.21 Instruction Flash...................................................... 9
4 修订历史记录
Changes from Revision B (December 2015) to Revision C Page
• 已更改 应用 ............................................................................................................................................................................ 1
• Added Figure 22 .................................................................................................................................................................. 24
• 已添加 接收文档更新通知 ..................................................................................................................................................... 29
5 说明 (续)
bq28z610 器件提供有大量的电池和系统安全功能,其中包括针对电池的放电过流、充电短路和放电短路功能,针
对 N 沟道 FET 的 FET 保护,内部 AFE 看门狗以及电池均衡功能。该器件可通过固件添加更多保护 特性, 例如
过压、欠压、过热等。
VSS 1 12 VC1
SRN 2 11 VC2
SRP 3 10 PBI
Thermal
Pad
TS1 4 9 CHG
SCL 5 8 PACK
SDA 6 7 DSG
Not to scale
Pin Functions
PIN
PIN NAME TYPE DESCRIPTION
NUMBER
1 VSS P (1) Device ground
Analog input pin connected to the internal coulomb counter peripheral for integrating a
2 SRN AI
small voltage between SRP and SRN where SRP is the top of the sense resistor.
Analog input pin connected to the internal coulomb counter peripheral for integrating a
3 SRP AI
small voltage between SRP and SRN where SRP is the top of the sense resistor.
Temperature input for ADC to the oversampled ADC channel, and optional Battery Trip
4 TS1 AI
Point (BTP) output
5 SCL I/O Serial Clock for I2C interface; requires external pullup when used
6 SDA I/O Serial Data for I2C interface; requires external pullup
7 DSG O N-CH FET drive output pin
8 PACK AI, P Pack sense input pin
9 CHG O N-CH FET drive output pin
10 PBI P Power supply backup input pin
Sense voltage input pin for most positive cell, balance current input for most positive cell.
11 VC2 AI, P
Primary power supply input and battery stack measurement input (BAT)
12 VC1 AI Sense voltage input pin for least positive cell, balance current input for least positive cell
PWPD — Exposed Pad, electrically connected to VSS (external trace)
(1) P = Power Connection, O = Digital Output, AI = Analog Input, I = Digital Input, I/O = Digital Input/Output
7 Specifications
7.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
Supply voltage range, VCC VC2, PBI –0.3 30 V
PACK –0.3 30 V
TS –0.3 VREG + 0.3 V
SRP, SRN –0.3 0.3 V
Input voltage range, VIN
VC1 + 8.5 or
VC2 VC1 – 0.3 V
VSS + 30
VSS + 8.5 or
VC1 VSS – 0.3 V
VSS + 30
Output voltage range, VO CHG, DSG –0.3 32 V
Maximum VSS current, ISS ±50 mA
Functional Temperature, TFUNC –40 110 °C
Lead temperature (soldering, 10 s), TSOLDER ±300 °C
Storage temperature range, TSTG –65 150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
SCL
SDA
td(STA) tf tsu(STOP)
tr
th(DAT) tsu(DAT)
0.15 8.0
Max CC Offset Error
Min CC Offset Error 6.0
0.10
4.0
CC Offset Error ( V)
0.00 0.0
±2.0
±0.05
±4.0
±0.10
±6.0 Max ADC Offset Error
Min ADC Offset Error
±0.15 ±8.0
±40 ±20 0 20 40 60 80 100 120 ±40 ±20 0 20 40 60 80 100 120
Temperature (ƒC) C001 Temperature (°C) C003
Figure 2. CC Offset Error Vs. Temperature Figure 3. ADC Offset Error Vs. Temperature
1.24 264
1.23
260
258
1.22
256
254
1.21
252
1.20 250
±40 ±20 0 20 40 60 80 100 ±40 ±20 0 20 40 60 80 100
Temperature (ƒC) C006 Temperature (ƒC) C007
Figure 4. Reference Voltage Vs. Temperature Figure 5. Low-Frequency Oscillator Vs. Temperature
16.9 ±24.6
High-Frequency Oscillator (MHz)
±24.8
16.8 ±25.0
±25.2
16.7 ±25.4
±25.6
16.6 ±25.8
±40 ±20 0 20 40 60 80 100 120 ±40 ±20 0 20 40 60 80 100 120
Temperature (ƒC) C008 Temperature (ƒC) C009
Figure 6. High-Frequency Oscillator Vs. Temperature Figure 7. Overcurrent Discharge Protection Threshold Vs.
Temperature
87.2 ±86.2
87.0 ±86.4
86.8 ±86.6
86.6 ±86.8
86.4 ±87.0
86.2 ±87.2
±40 ±20 0 20 40 60 80 100 120 ±40 ±20 0 20 40 60 80 100 120
Temperature (ƒC) C010 Temperature (ƒC) C011
Figure 8. Short Circuit Charge Protection Threshold Vs. Figure 9. Short Circuit Discharge 1 Protection Threshold Vs.
Temperature Temperature
11.00
SCD 2 Protection Threshold (mV)
±172.9
±173.2 10.85
±173.3
10.80
±173.4
10.75
±173.5
±173.6 10.70
±40 ±20 0 20 40 60 80 100 120 ±40 ±20 0 20 40 60 80 100 120
Temperature (ƒC) C012 Temperature (ƒC) C013
Figure 10. Short Circuit Discharge 2 Protection Threshold Figure 11. Overcurrent Delay Time Vs. Temperature
Vs. Temperature
452 480
SC Charge Current Delay Time ( S)
450
SC Discharge 1 Delay Time ( S)
448
460
446
444
442 440
440
438
420
436
434
432 400
±40 ±20 0 20 40 60 80 100 120 ±40 ±20 0 20 40 60 80 100 120
Temperature (ƒC) C014 Temperature (ƒC) C015
Threshold setting is 465 µs. Threshold setting is 465 µs (including internal delay).
Figure 12. Short Circuit Charge Current Delay Time Vs. Figure 13. Short Circuit Discharge 1 Delay Time Vs.
Temperature Temperature
2.49835
3.4982
2.4983
2.49825 3.49815
2.4982
2.49815 3.4981
2.4981
3.49805
2.49805
2.498 3.498
±40 ±20 0 20 40 60 80 100 120 ±40 ±20 0 20 40 60 80 100 120
Temperature (ƒC) C016 Temperature (ƒC) C017
Figure 14. VCELL Measurement at 2.5-V Vs. Temperature Figure 15. VCELL Measurement at 3.5-V Vs. Temperature
4.24805 99.25
4.24795 99.15
4.2479 99.10
4.24785 99.05
4.2478 99.00
±40 ±20 0 20 40 60 80 100 120 ±40 ±20 0 20 40 60 80 100 120
Temperature (ƒC) C018 Temperature (ƒC) C019
This is the VCELL average for single cell. ISET = 100 mA, RSNS= 1 Ω
Figure 16. VCELL Measurement at 4.25-V Vs. Temperature Figure 17. I measured Vs. Temperature
8 Detailed Description
8.1 Overview
The bq28z610 gas gauge is a fully integrated battery manager that employs flash-based firmware and integrated
hardware protection to provide a complete solution for battery-stack architectures composed of 1- to 2-series
cells. The bq28z610 device interfaces with a host system via an I2C protocol. High-performance, integrated
analog peripherals enable support for a sense resistor down to 1 mΩ and simultaneous current/voltage data
conversion for instant power calculations. The following sections detail all of the major component blocks
included as part of the bq28z610 device.
PACK
CHG
DSG
VSS
VC2
VC1
PBI
Cell, Stack, High Side
Cell Cell Detach Power Mode
Pack N-CH FET
Balancing Detection Control
Voltage Drive
Zero Volt
Wake Power On
Charge
Comparator Reset
Control
Short Circuit
Comparator
Over
Voltage
Current
Reference 2
Comparator
Watchdog
Timer Interrupt
NTC Bias
Internal
Temp
AD0/RC0 (TS1) Sensor
Internal
Voltage Reset
ADC MUX AFE Control
Reference1
Low
ADC/CC AFE COM 1.8V LDO
Frequency
FRONTEND Engine Regulator
Oscillator
SRP
SRN SDA
High
Low Voltage Frequency SCL
I/O Oscillator
I/O
I/O &
In-Circuit ADC/CC Timers & AFE COM COM
Interrupt
Emulator Digital Filter PWM Engine Engine
Controller
VREG
RNTC
ADx
NTC
LFO
AFE RESET
CAUTION
If the device is configured as a single-master architecture (an application processor)
and an occasional NACK is detected in the operation, the master can resend the
transaction. However, in a multi-master architecture, an incorrect ACK leading to
accidental loss of bus arbitration can cause a master to wait incorrectly for another
master to clear the bus. If this master does not get a bus-free signal, then it must have
in place a method to look for the bus and assume it is free after some period of time.
Also, if possible, set the clock speed to be 100 kHz or less to significantly reduce the
issue described above for multi-mode operation.
VC2
VC1
VSS
8.3.24 Authentication
This device supports security by:
• Authentication by the host using the SHA-1 method
• The gas gauge requires SHA-1 authentication before the device can be unsealed or allow full access.
8.4.2 Configuration
The device supports accurate data measurements and data logging of several key parameters.
2N7002K
10 M 10 M
10 k Fuse
13
100
0.1 µF 1 VSS PWPD VC1 12 2s
0.1 µF 1 µF
0.1 µF
SRN 1s
2 VC2 11
0.1 µF 5
0.1 µF
5.1 k 5.1 k
3 SRP PBI 10
0.1 µF 2.2 µF
PACK+
4 TS1 CHG 9
10 k
10
100 100
SCL 5 SCL PACK 8
MM3Z5V6C
100 100
SDA 6 SDA DSG 7
MM3Z5V6C
PACK–
100 100
1 to 3 mΩ
Note: The input filter capacitors of 0.1 µF for the SRN and SRP pins must be located near the pins of
the device.
Gauge Charger
Power
Copyright © 2017, Texas Instruments Incorporated
• To protect against cell undervoltage, set the data flash value to 2500 in the Protections: CUV register.
• To set the shutdown voltage to prevent further pack depletion due to low pack voltage, program Power:
Shutdown: Shutdown voltage = 2300.
• To protect against large charging currents when the AC adapter is attached, set the data flash value to 6000
in the Protections: OCC: Threshold register.
• To protect against large discharging currents when heavy loads are attached, set the data flash value to
–6000 in the Protections: OCD: Threshold register.
• Program a short circuit delay timer and threshold setting to enable the operating the system for large short
transient current pulses. These two parameters are under Protections: ASCC: Threshold = 100 for charging
current. The discharge current setting is Protections: ASCD:Threshold = –100 mV.
• To prevent the cells from overcharging and adding a second level of safety, there is a register setting that will
shut down the device if any of the cells voltage measurement is greater than the Safety Over Voltage setting
for greater than the delay time. Set this data flash value to 4500 in Permanent Fail: SOV: Threshold.
• To disable the cell balancing feature, set the data flash value to 0 in Settings: Configuration: Balancing
Configuration: bit 0 (CB).
• To enable the internal temperature and the external temperature sensors: Set Settings:Configuration:
Temperature Enable: Bit 0 (TSInt) = 1 for the internal sensor; set Bit 1 (TS1) = 1 for the external sensor.
• To prevent charging of the battery pack if the temperature falls below 0°C, set Protections: UTC:Threshold
= 0.
• To prevent discharging of the battery pack if the temperature falls below 0°C, set Protections:
UTD:Threshold = 0.
• To provide required information to the smart chargers, the gas gauge must operate in BROADCAST mode.
To enable this, set the [BCAST] bit in Configuration: SBS Configuration 2: Bit 0 [BCAST] = 1.
Each parameter listed for fault trigger thresholds has a delay timer setting associated for any noise filtering.
These values, along with the trigger thresholds for fault detection, may be changed based upon the application
requirements using the data flash settings in the appropriate register stated in the bq28z610 Technical Reference
Manual (SLUUA65).
(mAh)
(mAh)
11 Layout
0.1 µF
0.1 µF 0.1 µF
100 100
0.001, 50 ppm
Filter Circuit
Sense Ground
resistor Shield
Figure 24. bq28z610 Differential Filter
• The bq28z610 has an internal LDO that is internally compensated and does not require an external
decoupling capacitor. The PBI pin is used as a power supply backup input pin, providing power during brief
transient power outages. A standard 2.2-μF ceramic capacitor is connected from the PBI pin to ground, as
shown in application example.
• The I2C clock and data pins have integrated high-voltage ESD protection circuits; however, adding a Zener
diode and series resistor provides more robust ESD performance. The I2C clock and data lines have an
internal pull-down. When the gas gauge senses that both lines are low (such as during removal of the pack),
the device performs auto-offset calibration and then goes into SLEEP mode to conserve power.
D D D D D D D D
S S S G S S S G
Power Trace Line
PACK +
Reverse Polarity
Portection
PACK–
Fuse
13 Input filters
1 VSS VC1 12
PWPD
2s
2 SRN VC2 11
Differential Input well
matched for accuracy 1s
3 SRP PBI 10
Thermistor
4 TS1 CHG 9
5 SCL PACK 8
SCL Bus
Communication
Power Ground Trace
SDA 6 SDA DSG 7
12 器件和文档支持
12.1 文档支持
• 《bq28z610 技术参考手册》(文献编号SLUUAN0)
• 应用报告《Impedance Track 电池电量监测算法的理论及实现》(文献编号:SLUA364B)
12.2 接收文档更新通知
如需接收文档更新通知,请导航至 TI.com 上的器件产品文件夹。单击右上角的“通知我”进行注册,即可每周接收产
品信息更改摘要。有关更改的详细信息,请查看任何已修订文档中包含的修订历史记录。
12.3 社区资源
下列链接提供到 TI 社区资源的连接。链接的内容由各个分销商“按照原样”提供。这些内容并不构成 TI 技术规范,
并且不一定反映 TI 的观点;请参阅 TI 的 《使用条款》。
TI E2E™ 在线社区 TI 的工程师对工程师 (E2E) 社区。此社区的创建目的在于促进工程师之间的协作。在
e2e.ti.com 中,您可以咨询问题、分享知识、拓展思路并与同行工程师一道帮助解决问题。
设计支持 TI 参考设计支持 可帮助您快速查找有帮助的 E2E 论坛、设计支持工具以及技术支持的联系信息。
12.4 商标
Impedance Track, E2E are trademarks of Texas Instruments.
Windows is a registered trademark of Microsoft.
All other trademarks are the property of their respective owners.
12.5 静电放电警告
ESD 可能会损坏该集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理措施和安装程序 , 可
能会损坏集成电路。
ESD 的损坏小至导致微小的性能降级 , 大至整个器件故障。 精密的集成电路可能更容易受到损坏 , 这是因为非常细微的参数更改都可
能会导致器件与其发布的规格不相符。
12.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 机械、封装和可订购信息
以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。数据如有变更,恕不另行通知和修
订此文档。如欲获取此产品说明书的浏览器版本,请参阅左侧的导航。
www.ti.com 10-Dec-2020
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)
BQ28Z610DRZR ACTIVE SON DRZ 12 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 BQ28
Z610
BQ28Z610DRZT ACTIVE SON DRZ 12 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 BQ28
Z610
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com 10-Dec-2020
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 29-Mar-2023
B0 W
Reel
Diameter
Cavity A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
W Overall width of the carrier tape
P1 Pitch between successive cavity centers
Sprocket Holes
Q1 Q2 Q1 Q2
Pocket Quadrants
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 29-Mar-2023
Width (mm)
H
W
Pack Materials-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 29-Mar-2023
TUBE
T - Tube
height L - Tube length
W - Tube
width
Pack Materials-Page 3
PACKAGE OUTLINE
DRZ0012A VSON - 1 mm max height
PLASTIC QUAD FLATPACK- NO LEAD
B 4.15
3.85 A
2.65
2.35
1
0.8 C
SEATING PLANE
0.05 0.08 C
0
2.55
2.35
(0.2) TYP
2X (0.2)
6 7
SYMM
2X 2
13 2.05
1.85
10X 0.4
1 12
PIN 1 ID SYMM
12X 0.3
0.1
(OPTIONAL)
0.1 C A B
12X 0.5
0.3 0.05 C
4218895/B 03/2022
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for optimal thermal and mechanical performance.
www.ti.com
EXAMPLE BOARD LAYOUT
DRZ0012A VSON - 1 mm max height
PLASTIC QUAD FLATPACK- NO LEAD
2X (2.25)
2X (0.975)
12X (0.6)
12X (0.2)
1
12
(1.95)
10X (0.4)
SYMM 13
2X (2) (2.9)
2X (0.725)
(Ø0.2) VIA
TYP
6 7
(R0.05) TYP
SYMM 4X (0.2)
(2.45)
(3.8)
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
www.ti.com
EXAMPLE STENCIL DESIGN
DRZ0012A VSON - 1 mm max height
PLASTIC QUAD FLATPACK- NO LEAD
2X (1.08)
4X (1.2625)
2X (0.64)
12X (0.6)
12X (0.2)
1
7
10X (0.4)
SYMM
13
2X (1.75)
(0.05) TYP
12
6
SYMM
(3.8)
EXPOSED PAD
79% PRINTED COVERAGE BY AREA
SCALE: 20X
4218895/B 03/2022
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
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