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Márquez Et Al 2011 Structural Defects in W Doped Tio2 (101) Anatase Surface Density Functional Study
Márquez Et Al 2011 Structural Defects in W Doped Tio2 (101) Anatase Surface Density Functional Study
pubs.acs.org/JPCC
r 2011 American Chemical Society 16970 dx.doi.org/10.1021/jp203223f | J. Phys. Chem. C 2011, 115, 16970–16976
The Journal of Physical Chemistry C ARTICLE
Figure 5. Radial distribution function for the W O pair (left) and integrated coordination number for the W atoms (right). Inset showing the local
structure around the W atom with its six (5 + 1) first neighbors labeled.
4. CONCLUSIONS
In the present work, a systematic study of the interaction
between W-dopant atoms and structural point defects experi-
mentally evidenced in nanostructured TiO2 materials has been
carried out by means of plane-wave pseudopotential calculations.
We focus this study on the (101) anatase surface because this is
the main structural TiO2 polymorph found in these kind of
materials, and the (101) surface is the thermodynamically most
stable crystal face. Our calculations show that without the
presence of VTi defects, W atoms clearly prefer a superficial
pentacoordinated position, binding the extra O atom (added to
the model to compensate the charge of the W6+ cation) at a short
1.71 Å distance, typical of a WdO double bond, whereas all
subsurface W/Ti substitutions examined show to be less stable.
These findings are related to the distortions introduced by the
Figure 7. Total (top) and atom-projected (bottom) density of states of doping process into the anatase structure: in the absence of VTi
4% doped Ti1 3xO2W2x model and undoped TiO2 anatase (101) defects that may ease the deformations introduced by the
surface models. The origin is at the Fermi level of both systems. The
inset shows the lower edge of the conduction band.
W-dopant, surface substitutional sites are clearly preferred be-
cause they require lower structural distortions. DFT calculations
on models that introduce a VTi site every two W/Ti substitutions
regardless of the W substitutional position and charge compen- clearly indicate that the preferred configurations are those on
sation scheme considered. Therefore, the electronic structure of which one of the W6+ cations and the VTi site are first neighbors,
the W-doped anatase TiO2 surface is found to be essentially with simultaneous formation of a WdO entity. Whereas this
insensitive to the position and concentration of W dopant atoms. situation is most easily achieved when the three defects are at the
By comparing these DOS, we can see two evident changes that surface, it is also possible when the three defects are at subsurface
take place upon W doping the TiO2 anatase surface. The first one positions. The mechanism of formation is explained in terms of
is the occurrence, at the lower level energy edge of the valence the reduction of the coordination of one O atom by the presence
band of a series of states with mainly O 2p character but with a of the VTi and its posterior capture by the W-dopant, with
nonnegligible contribution of the W 5d energy levels. (See formation of the wolframyl group. Whereas it is found that the
PDOS in Figure 7.) These features are associated with the O main driving force to system stabilization is the formation of
atoms that are first neighbors of the W dopant (except the O wolframyl species, a secondary factor seems to be the separation
from the WdO, which appears in the middle of the valence of the W6+ cations: if both W6+ cations are first cationic
band), and the overlap of the O 2p and W 5d energy levels found neighbors, then the distortions introduced into the TiO2 net-
is indicative of some degree of covalency on the W O bond. The work are concentrated into a small volume; if both W6+ cations
second modification of the DOS that takes place upon W doping are second cationic neighbors, then there is more room to
the anatase surface is found at the lower edge of the conduction accommodate these distortions. The rdf for the W O pair
band. (See the inset in Figure 7.) This feature (that is similar in all obtained from MD calculations in models where charge com-
W-doped surface models) is responsible for the ∼0.1 to 0.2 eV pensation is achieved by a mixture of both VTi and Oad defects
lowering of the band gap found in W Ti mixed oxides and is shows a predominance of 5 + 1 coordination for W6+ cations,
mainly associated with a decrease in energy of the lowest Ti 3d with two W O distances at 1.8 to 2.0 and 2.5 to 2.6 Å, allowing
levels on the conduction band, as can be deduced from the atom for a rationalization of experimental EXAFS data. Our MD data
projected DOS. (See Figure 5b.) Detailed inspection of the calculations allow us to assign these longer W O distances to
atom-projected DOS shows that the majority of this contribution WdO entities that significantly displace a nearby O anion. In its
comes from the Ti atoms that are closer to the W impurity. turn, the formation of these WdO groups is the consequence of
These observations can be rationalized by examining the the presence of a VTi site that reduces the coordination of one
results of a Bader charge analysis. Of course the results of this tricoordinated O anion and facilitates its capture by the nearby
charge distribution analysis cannot be taken as absolute electron W6+ cation. The computed vibrational spectrum, obtained from
population values but are useful for comparative purposes. The our MD simulation, displays a band at ∼1000 cm 1 associated
formally W6+ cation has an average charge of +4.46e , whereas with the WdO stretch mode, in agreement with the experi-
the Ti cations are found to have a Bader charge of +2.63e . The mental Raman line at ∼970 cm 1. The combination of our
charge found the W-dopant is consistent with a high degree of structural data, the computed vibrational spectrum, and the
16975 dx.doi.org/10.1021/jp203223f |J. Phys. Chem. C 2011, 115, 16970–16976
The Journal of Physical Chemistry C ARTICLE
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