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J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch
January 2015
Features
• This device is designed for low level analog switching,
sample and hold circuits and chopper stabilized amplifiers.
• Sourced from process 51
• Source & Drain are interchangeable.
S
G TO-92 Note: Source & Drain
S SOT-23
D D are interchangeable
Figure 1. J111 / J112 / J113 Device Package Figure 2. MMBFJ111 / MMBFJ112 / MMBFJ113
Device Package
Ordering Information
Part Number Top Mark Package Packing Method
J111 J111 TO-92 3L Bulk
J111_D26Z J111 TO-92 3L Tape and Reel
J111_D74Z J111 TO-92 3L Ammo
J112 J112 TO-92 3L Bulk
J112_D26Z J112 TO-92 3L Tape and Reel
J112_D27Z J112 TO-92 3L Tape and Reel
J112_D74Z J112 TO-92 3L Ammo
J113 J113 TO-92 3L Bulk
J113_D74Z J113 TO-92 3L Ammo
J113_D75Z J113 TO-92 3L Ammo
MMBFJ111 6P SOT-23 3L Tape and Reel
MMBFJ112 6R SOT-23 3L Tape and Reel
MMBFJ113 6S SOT-23 3L Tape and Reel
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Max.
Symbol Parameter MMBFJ111 / Unit
J111 / J112 /
MMBFJ112 /
J113(3)
MMBFJ113(4)
Total Device Dissipation 625 350 mW
PD
Derate Above 25°C 5.0 2.8 mW/°C
RθJC Thermal Resistance, Junction-to-Case 125 °C/W
RθJA Thermal Resistance, Junction-to-Ambient 200 357 °C/W
Notes:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
4. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2.
Note:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%.
r
- TRANSCONDUCTANCE (mmhos)
10 100 100
DS
T A = 25°C
V GS = 0 V TYP V GS(off) = - 2.0 V
- 0.2 V r DS
8
50 50
- 0.4 V
6
- 0.6 V
20 g fs 20
4
- 0.8 V
I DSS , g fs @ V DS = 15V,
- 1.0 V 10 V GS = 0 PULSED 10
2 r DS @ 1.0 mA, V GS = 0
D
I DSS I D = 1.0 nA
fs
0 _5 5
Ω)
_
g
_ _ _
0 0.4 0.8 1.2 1.6 2 0.5 1 2 5 10
VDS - DRAIN-SOURCE VOLTAGE (V) V GS (OFF) - GATE CUTOFF VOLTAGE (V)
40 16
VGS(off) = - 3.0 V VGS(off) = - 1.6 V V DS = 15 V
- 55°C - 55°C
25°C 25°C
30 125°C 12
125°C
VGS(off) = - 2.0 V
125°C
20 25°C 8 VGS(off) = - 1.1 V
- 55°C
125°C
25°C
10 V DS = 15 V 4 - 55°C
D
D
I
I
0 0
0 -1 -2 -3 0 -0.5 -1 -1.5
VGS - GATE-SOURCE VOLTAGE (V) VGS - GATE-SOURCE VOLTAGE (V)
- TRANSCONDUCTANCE (mmhos)
30 30
VGS(off) = - 3.0 V
- 55°C
V GS(off) = - 1.6 V
25°C
- 55°C
125°C
20 20 25°C
VGS(off) = - 2.0 V 125°C
- 55°C
25°C
125°C VGS(off) = - 1.1 V
10 10 - 55°C
25°C
125°C
V DS = 15 V V DS = 15 V
fs
0 0
g
0 -1 -2 -3 0 -0.5 -1 -1.5
VGS - GATE-SOURCE VOLTAGE (V) VGS - GATE-SOURCE VOLTAGE (V)
r DS - NORMALIZED RESISTANCE ( Ω )
r DS - DRAIN "ON" RESISTANCE (Ω)
100
125°C V GS(off)
100
V GS(off) @ 5.0V, 10 μA
TYP = - 2.0V 50
50 25°C r DS
20 r DS =
125°C V GS(off) V GS
1 -________
- 55°C 10 V GS(off)
TYP = - 7.0V
5
20 25°C
r DS @ V GS = 0
2
- 55°C
1
10 0 0.2 0.4 0.6 0.8 1
1 2 5 10 20 50 100 VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V)
ID - DRAIN CURRENT (mA)
Figure 9. On Resistance vs. Drain Current Figure 10. Normalized Drain Resistance vs.
Bias Voltage
100 100
TA = 25°C
T A = 25°C V DG = 5.0V
5.0V
V DG = 15V
f = 1.0 kHz 10V 5.0V
15V
20V 10V
f = 1.0 kHz
10 V GS(off) = - 5.0V
15V 10V
15V
20V
20V
10 V GS(off) = - 1.4V
1 V GS(off) = - 2.0V
V GS(off) = - 3.0V
V GS(off) = - 0.85V
1 0.1
0.01 0.1 10
os
0.1 1 10
g
Figure 11. Transconductance vs. Drain Current Figure 12. Output Conductance vs. Drain Current
100 100
V DG = 15V
e n - NOISE VOLTAGE (nV / Hz)
C is (C rs ) - CAPACITANCE (pF)
10 10
C is (V DS = 0)
5 I D = 1.0 mA
C is (V DS = 20)
I D = 10 mA
C rs (V DS = 0)
1 1
0 -4 -8 -12 -16 -20 0.01 1 10 100
V GS - GATE-SOURCE VOLTAGE (V) f - FREQUENCY (kHz)
Figure 13. Capacitance vs. Voltage Figure 14. Noise Voltage vs. Frequency
100
e n - NOISE VOLTAGE (nV / √ Hz)
V DG = 15V 700
200
f = 10 kHz 100
f = 100 kHz
0
1 0 25 50 75 100 125 150
0.01 0.1 1 10
TEMPERATURE ( o C)
I D - DRAIN CURRENT (mA)
Figure 15. Noise Voltage vs. Current Figure 16. Power Dissipation vs.
Ambient Temperature
25 100
V DD = 3.0V T A = 25°C
t r (ON) VGS(off)= -2.2V
t r APPROX. I D INDEPENDENT V DD = 3.0V
20 80
VGS(off) = 3.0V V GS = -12V
- 4.0V
t (off)
15 T A = 25°C 60 - 7.5V t d(off) DEVICE
0 0
0 -2 -4 -6 -8 -10 0 2 4 6 8 10
V GS(off) - GATE-SOURCE CUTOFF VOLTAGE (V) I D - DRAIN CURRENT (mA)
Figure 17. Switching Turn-On Time vs. Figure 18. Switching Turn-Off Time vs. Drain Current
Gate-Source Voltage
Figure 19. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type
Figure 20. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type
2.92±0.20 0.95
3
1.40
1.30+0.20
-0.15 2.20
1 2
(0.29) 0.60
0.95 0.37
0.20 A B 1.00
1.90 1.90
LAND PATTERN
RECOMMENDATION
(0.93) 0.10
0.00
0.10 C
C 2.40±0.30
SCALE: 2X
Authorized Distributor
Fairchild Semiconductor:
J113_D75Z J113_D74Z J113_D26Z J113_D27Z J113 J113_D75Z_Q J113_D74Z_Q