MOT MOT3 400

Np - CHANNELMOSFET

3400 N-Channel Enhancement Mode Field Effect Transistor

Symbol
V(BR)DSS RDS(on)MAX ID 2.Drain
35mΩ@ 10V
30 V 40mΩ@4.5V 5.8A
52mΩ@2.5V
1.Gate

FEATURE 3.Source
z High dense cell design for extremely low RDS(ON)
z Exceptional on-resistance and maximum DC current capability

APPLICATION MO
T3
z Load/Power Switching 40
0
z Interfacing Switching
G

„ ORDER INFORMATION
Order codes
Package Packing
Halogen-Free Halogen
N/A MOT3400 SOT-23 3000pieces /Real

Maximum ratings ( Ta=25℃ unless otherwise noted)

Parameter Symbol Value Unit

Drain-Source Voltage VDS 30 V

Gate-Source Voltage VGS ±12 V
Continuous Drain Current ID 5.8 A
Drain Current-Pulsed (note 1) IDM 30 A
Power Dissipation PD 350 mW
Thermal Resistance from Junction to Ambient (note 2) RθJA 357 ℃/W
Junction Temperature TJ 150 ℃
Storage Temperature TSTG -55~+150 ℃

Rev. 1.0 -1-

MOT MOT3 400
Np - CHANNELMOSFET

ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified

Parameter Symbol Test Condition Min Typ Max Unit

Off Characteristics
Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250µA 30 V
Zero gate voltage drain current IDSS VDS =24V,VGS = 0V 1 µA
Gate-source leakage current IGSS VGS =±12V, VDS = 0V ±100 nA
On characteristics
VGS =10V, ID =5.8A 35 mΩ
Drain-source on-resistance
RDS(on) VGS =4.5V, ID =5A 40 mΩ
(note 3)
VGS =2.5V,ID=4A 52 mΩ
Forward tranconductance gFS VDS =5V, ID =5A 8 S
Gate threshold voltage VGS(th) VDS =VGS, ID =250µA 0.7 1.4 V
Dynamic Characteristics (note 4,5)
Input capacitance Ciss 1050 pF
Output capacitance Coss VDS =15V,VGS =0V,f =1MHz 99 pF
Reverse transfer capacitance Crss 77 pF
Gate resistance Rg VDS =0V,VGS =0V,f =1MHz 3.6 Ω
Switching Characteristics (note 4,5)
Turn-on delay time td(on) 5 ns
Turn-on rise time tr VGS=10V,VDS=15V, 7 ns
Turn-off delay time td(off) RL=2.7Ω,RGEN=3Ω 40 ns
Turn-off fall time tf 6 ns
Drain-source diode characteristics and maximum ratings
Diode forward voltage (note 3) VSD IS=1A,VGS=0V 1 V
Note :
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t < 5 sec.
3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.

Rev. 1.0 -2- March 2020

MOT MOT3 400
Np - CHANNELMOSFET

Typical Characteristics
Output Characteristics Transfer Characteristics
25 5

Pulsed VDS=5.0V
VGS=10.0V、4.5V、3.0V Pulsed

20 4

VGS=2.5V

(A)
(A)

ID
ID

15 3

DRAIN CURRENT
DRAIN CURRENT

10 2
VGS=2.0V

Ta=100℃
5 1

Ta=25℃

0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5

DRAIN TO SOURCE VOLTAGE VDS (V) GATE TO SOURCE VOLTAGE VGS (V)

RDS(ON) —— ID RDS(ON) —— VGS

60 400
Ta=25℃
Ta=25℃
Pulsed
55 Pulsed 350
(mΩ)

(mΩ)

50 300
RDS(ON)

RDS(ON)

45 250

VGS=2.5V
ON-RESISTANCE

ON-RESISTANCE

40 200

35 150

VGS=4.5V
30 100
ID=5A

25 VGS=10V 50

20 0
1 4 8 12 16 20 0 2 4 6 8 10

DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V)

IS —— VSD Threshold Voltage

10 1.0
Ta=25℃
Pulsed

1 0.9
(V)
IS (A)

VTH

ID=250uA
SOURCE CURRENT

0.1 0.8
THRESHOLD VOLTAGE

0.01 0.7

1E-3 0.6

1E-4 0.5
0 200 400 600 800 1000 1200 25 50 75 100 125

SOURCE TO DRAIN VOLTAGE VSD (mV) JUNCTION TEMPERATURE TJ (℃ )

Rev. 1.0 -3- March 2020

MOT MOT3 400
Np - CHANNELMOSFET

n SOT-2 3

Rev. 1.0 -4- March 2020