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JO-ll- o0ay ~
F ete Et ect
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ch s
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auesnt
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j Contatt around the
J “Semcondurtor and acids -
Role of te Semiconductor bat
. iste fount erurgy fr Hes
ii
v
lecfroms
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Chectrie Aue E- -s “fZ dx
WL
Dison, Peg
rf pr type doping conuntrerhon i more than '0 "dp
A
ew
~~ >>
Sinw Up Sn, Wp44 Wa &% Wn
Ap Wr = NW
a axe é Fogy =o gabixomie ge
x & .
Ve - 4a Cxt- 2x)
2é
gan
Ve Ye Ne w*
. , Qa
2 Ww 2 a-boy.,
ty
ewor[ as (v- ve] w |
4 Np Vian
Vo - Junction cortact potential
- Applied potential arrose the
junution = — Viens
Ve)
Tt peo dem , Wee
. Ve 9Np a*
2€
Tf Toxo then, Vos = Vo~ Vix)
tun Q- bX) = [ se vr)
\
np
at
3 Vas (aonb) Hb 8
a
ae
Vp = INP at
2b
bee 5 Drain ewra ent
Ty = Ag Np Bae
= Np xP Ms 1 2bw
q"P o
y
Ves)" a) > by=a y Mes
lan (3)
The 20w9 ae (fe) ")s
L
Vos — on wesietore of TFET
1,
- a L (2
At Vas = 9 T, = eee © 100-2 - ioe,
lor i Ale
dynantie orl 2ameg "P|
7 It ve
0 Swit.
sudan Lend
Uteful
FET Small S/qnal Analysis
Ty is @ function of Vox @nd Vos
Dip = os ‘be + Oty ae
8 I Ng 2 Vos \ving
= Gm)Vigg +L Vey
Swan reordunienn Vd
site moll ergnat
. ths gre
Gms My 4p
Wows
Vos. Vos
a= ral
Us “plication =
D> b= Vd 9m
Tos F Toss(1 3
?
Qs = l-2 Toss
=
Heer yey
Was | Ve
gm= -2 Loss
tk
dm= aS ( Suse Tes)
Vp
Vins
0 Vos
Ty
nl)
(8
y
Tose
Yo
Vos |
Vos \ 35
Thyss = Sabination wunsunt
Ves. _ cmperital equation (cot douued)
fon Uepauirents
) E Gm - Trans vorduvtane
th
Vos 0
vue"!
Vinge
Vos,
Lee Brasing ay,F ET — ®
ut
Va
fs
ie
Voltage gain of I¢ger ia “cs Te
=> bow frequany
eas
Let ug include Soure wesistane and load vesisknu
ani, Shi |
Way f
yan feud
2 Rs
At the out poat
La Re + 4a Rst(Ad~ Gm%y) Ty = 0
. Vs = Va- da be
4d = Om Tavy
(Ret ny + Jm ks v4)
= Im Vy
Ad = wwe
Rol gf + (4p) R, fo Volinge gain Aveo ~~ KE
Ve Rar ge
= - 4m Ga ka
bf M+ OL
Ye ie
erg all Kd
4 | Rye alld
ve ~GmRd
Re, ky, Riker O4L6
Designing Tee Ths quan qairn le
bee
=
— Veg \*
tn Fi te rte WD
To find wegion of opuraticn@ pi!) Tp Vago FEY
Toss = (orn (Vos =0)
Tss « Sint by Nhs 5v
oh hap tin
Vos 0% Von oa Ble i eas “aN
+ Catuilade farang conductone Jr using known
Yai
of Vp, Ios, Losy 1-0, fe
= 2 Ys,
dns = (4 Ios)”
\
« Calulak Re using given Av ang gm
Av=-Gm Re
“ ty SI, = 5m4
Tok 2 Te Ree 1 Vys!
2D Rs= Wong)
Zz
Von = TpRy + Vos + Tp Rs
D> Be Voo~ Cvon+ Toes)
B
Rand Ry exist to kup Vas wonstand - Seto Bima/Cles
Ri and Re ,we Can Just put a huge value S4y
Ma ty Rp amd vernrove R,-
or : = \> back
DHF CL,
> cz to
@ 2nf ks
Sionilenty ealulak t
Reo |
fa
i ce gai" obtained from FET la ies lo)
1 ‘rs be used de vontrol current, and 1s
So!
yo amore able than cE amphier «
a
Mase eT > Issn
we ay np
5 \\e
da Athin,
1 T phatowusal
vara
nove
ayer
9. bolunt (donslepen
Guranes pradesh which
1S damaged by uv
3: Eheburt | channel Jey )
‘aa |
fhe metal cise uontat and metal
untat of bottom behaves (ike .
& wpauter whin poknial is applied 0190587 groauuy 3
dufric Feld: / 4
Tu advantage of MOSFET 15 that dhe manulochering
froudune ton be dutormakd (6-0, okp by skp).
Operation Annpli fer ( op-Amp)
Oe / i]
a ‘= [|
ampli” hv 2
« Differential ampltt er
the
v= IM.)
Ivy- uy)
* CMRR- lommon mode Vefechon rah.
Whi Vv and Ve are equal 17, both, phace
and arnpliitee ,» Ay 2 a Bup this downy
happen if the ve phate ai tterenc .
cuee hands common mode Signals .
24=I!-2023,
| Operational Aamplifier «
) Voltage. shunt Redboue amplrher
Wt) Emitter follower Curren} amph her
Trams esissomy,
amplifier
Outjut voltage
Tenput uvceemt
TF there 5 Aeutbouks , then be fudback factor = Th
ye
Ivangasistame = ales
Ts
h | einaeit
Hy ee
If
a ye Eki
Rig = input ienpedunte oe ie ” fae
Ae due fo feedback =F, 4pVo whe
fe Beh = Molin
Tr fila)
Ry = Ri
1+ pm
Leap
bee
