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    LECTURER NOTES

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    LECTURER NOTES

    Copyright:

    © All Rights Reserved
    Download as PDF or read online from Scribd
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    14 views17 pages

    Power Electronics

    Uploaded by

    amanda christine
    LECTURER NOTES

    Copyright:

    © All Rights Reserved
    Download as PDF or read online from Scribd
    Flag for inappropriate content
    of 17
    Wd) ELECTRICAL AND ELECTRONICS ENGINEERING DEPARTMENT DIPLOMA IN ELECTRICAL & ELECTRONICS ENGINEERING (POWER OPTION) POWER ELECTRONICS COURSE OUTLINE I, POWER SEMICONDUCTOR DE eS - Construction and operation of special semiconductor devices - Analy: f semiconductor devices Application of special semiconductor devices 2. RECTIFIER CIRCUITS - Rectifier circuits Calculations related to rectifier circuits Controlled Rectification techniques - Phase shift circuits Calculations related to Phase shift circuits for power control - Converter operation D.C Line commutation Application of controlled rectifier system 3 CYCLO-CONVERTERS Operation principles of cyclo-converters Operation of single phase to single phase circuit Operation of load commutated cyclo-converter Envelop cyclo-converter operation Application of cyclo-converters 4. INVERTERS Single phase inverters Forced Commutated Thyristor inverters Three phase bridge inverters Pulse-width modulated (PWM) inve Current source inverters - Series inverters Parallel inverters | ORBORASS) Gee * UIT are ideally suited f Oscillation elton Lt ftine thyristor, which connected in suitable THYRIS ‘ORAS A PNPN DEVICK Fig1.3. Thyristor as PNPN device then the middle junction has a reverse 2 at the P side, No forward current * In fig. 2b, positive voltage is applied to bias, positive at the N side of Jz and negative can flow between the end terminals because of the reverse biaw across Jp, ‘© In fig 2c, negative voltage is applied to T). The Jy and Jy have reverse bias Again, no current can flow between the end terminals because of the internal reverse bias, * Now what the PNPN device needs is an added gate electrode to provide a trigger voltage that can start the current conduction. 1, SILICON CONTROLLED RECTIFIER (SCR) It is 4-layer PNPN device that consist of an alloy of N-type material into a silicon PNP pellet providing two main terminals namely anode and cathode. ‘The gate contact is welded to P- region to form the third terminal usually referred to as gate, It is a rectifier with a control clement. It consists of 3 diodes connected back to back with gate connection. It is widely uscd as a switching device in power control applications. It can control loads by switching currents off and on up to many thousands times/sec. It can also switch on for a variable length of time, thereby delivering selected amount of power to the load. Basic operation of SCR SCR symbol and its construction a) Biasing and operation When a voltage is applied across thyri . held negative with me ew : nee With polarity such that its anode is biased and device only conducts vamall ‘i Junction J) and Js are reverse If the reverse voltage across oa ¢ current. also incre wange aeross the SCR is increased the leakage current will breakdown occurs it rapidly inreases to lange Celoe ther mew dency the device. “ases to a large value that may destroy the janet ns ote is Applied across the SCR so that the anode is held Fanetion Jr and Jy will became forward biased but junction J will be reverse SCR is aid to be an only small leakage current will be flowing and the current seo e e forward blocking state (OFF). This forward leakage also increases slowly with increase in forward voltage until the breakdown voltage Vso is reached. At this point the current passed by SCR increases rapidly and the voltage across the device falls to a much lower value Vr. SCR is made to conduct a large forward current when the forward anode- cathode voltage is smaller than breakdown voltage Vso by triggering or firing the device. Triggering is achieved by injecting a current pulse into the gate terminal. When a gate signal is applied, thyristor tums ON at a voltage below Veo depending on the magnitude of gate current. The higher the gate current, the lower is the forward break sown voltage. Once the thyristor start conducting a forward current exceeding the minimum valve called the latching current, the gate signal is no longer required to maintain the device in its ON state. The thyristor returns to blocking state if the anode current falls below a level called holding current. Note hence that the I is associated with turn ON process while In to the turn OFF process. One the thyristor start conducting fully, gate loses control on it and the device can tum OFF i.e. become non-conducting only on reducing the forward current to a level below the holding current In. This process of turning OFF is also referred to commutation. race K Forward conduction mode lus I92 Io, teakage current Reverse blocking Electric: i SAWER E) al engineering has thr POWER ELECTRONICS fee major areas: Electronics, Power and > Contr ‘ ol Electronics; — Deals with Processing of infeen the study of semi-conductor devi * Power: — deal ation at lower power levels. Is it t transmission, distibore both rotating and static equi © Controls — dest ution and utilization of vast quantities systems ski s Ray the stability and response chara Power Electronics feedback on cither a continuous or sampled — data basis. . and control the = iavolves combination of these areas. The function of PE is to process . the electrical energy by su tage and current in a form that optimally suited tothe load. petving voles ces and circuits for the pment for the generations lof electrical power cieristics of closed — 100P hich deals with the electronic devices in deals with these aerial leetrontes + Defined as the science, WI perators that are particularly useful in industry and also systems. . It deals the study of:- hich are used in industrial electronic Various electron devices and transducers w! systems. «Electric circuit used «Typical industrial electronic system. 2 Various high power electronic devices working an stems, transformation of power supply to suit the elec! Electronic.) Power electronic: = is a subject that concerns the application of electronic principles into rather than signal level. The major component of the its design and situation that are rated at power level thyristor, hence P.E relates to thyristor circuitry, power electronic circuits is role in the control of power flow in a system. d control of high power supply tronic system etc. (Power Application of Power electronic fice equipment elevators, light dimmers, flashers Commercial: UPS, computer and 0! heating, air-conditioning, adverting, etc. Industrial: arc and industrial furnaces blowers and fans, pumps and comp! industrial lasers, welding, excavators, textile mills. Etc. diiigning, cooking, lighting space heating, refrigerators, electric door Residential: air con operators dryers, fans, PC Food Mixtures etc. ive electronics, battery charger. Transportation: Street Cars, trolley busses automoti’ Aerospace: Space shuttle power supply system, Satelite P.s, an aircraft Ps Main Power Source. ressors, ‘MICONDUCTOR POWER DEVIC CATION DIODES AND THEIR AP his (erm signal diode includes all devices that have been designed for use in circuits Where large current and voltage ratings are not required, ‘The usual requirements are for a large reverse resistance/forward resistance ratio. and minimum junction .d to a particular circuit general purpose while others asa detector Power Diodes They are most often employed for the conversion of a.c into d.c as rectifiers. The important power diode parameters are PIV, maximum forward current and the sistanc .. The PIV is in the range SOv ~100v with a maximum forward current of 30A. The forward resistance must be as low as possible to avoid considerable voltage drop across the diode when the large forward current flows. This resistance is usually not very much more than 1Q or 20. PIV- This is the maximum possible voltage across the diode when it is reverse biased. Zener Diodes The huge reverse current, which flows when the breakdown voltage of a diode is A zener diode is exceeded need not necessary result in damage of the source. fabricated in a way which allows it to be operated in breakdown region without damage, provided the current is restricted by the external resistance to a safer value. The large current at breakdown is brought about by 2 factors. - Zener effect - Avalanche effect At voltage up to about Sv the electric field near the junction is strong enough to pull electrons out of covalent bonds holding and these are available to alignment the reverse current. This is known as the zener effect. The avalanche effect occurs if the reverse bias voltage is made larger than 5V or so. The velocity with which the charge carries moves through the crystal lattice is increased to such an extent that they attain enough kinetic energy to ionized atoms by collision. An atom is said to have been ionized when one of its electron has been removed. Zener diodes are available in a number of standardized reference voltages e.g. it is possible to obtain a zener diode with a reference (breakdown) voltage of 8.2V. An alternative name for the device is a voltage reference diode. Applications: - Voltage referen - Peak clipper - Voltage Regulator . Meter protection against damage from accidental application excessive voltage. gall A Varactor Diodes on Junction is a region of W resistivi of hi rn . ow resistivity such a junstn h resistivity sandwiched between two reBions given by :C=eAAy, where therefore processes capacitance, the magmtl © — Permittivi . A~ Are: ity of semiconductor Ao Area of the function a i . A , with the th of the depletion layer. w is not constant quantity but instead va Most semicond magnitude and the polarity of the voltage applied across the junction is minimized he diodes are manufactured in such a way that their junction capacitance i ut_varactor di een designe ve a particular range of capacitance values. iode has been designed to have @ P' ive varaclor diode is operated with a reverse bias and then its jut rsely proportion to the square root of the bias voltage ¥ i.e. . c= Figure shows graphically how the capacitance of a varactor diode bias voltage and it, also shows the symbol of a varactor diode. TY variation might be 2~ 12 pF or 20 - 28 pF or 27-72 pF- of relatively de of which ries: nection capacitance 1S varies with the reverse pically the capacitance Application of varactor diode 1. In automatic frequency control device 2. Adjustable band pass filter 3. FM modulator 4. Parametric amplifier. @ Thyristor comprise those solid-state devices th conductors I nat have two or more P.N layers that can be switched tate, It is a solidestate electronic switch ¢ of amperes. It has replaced rel s such as lighting, motor speed for high v; nical switches in many application ntrol, ete E rmerly there was order device called thyratron which was order device “ ed thyratron which was a gas ~ filled tube that passes current when an arc discharge ocers a a rtcl firing voltage Below is thyristor family: Thyristor oO Unidirectiona ‘ahyes) Been Triggers sce | [scs ] [usc ] TRAC | [Ler ] [ eraiecos ¥ ¥ 1 KEY Usidetion! slayers | | layers SCR - Silicon Controlled rectifier ie) SCS - Silicon Controlled Switch [=] + LASCR - Light Activated Silicon controlled rectifier BS DIAC SUS — Silicon Unilateral switch. SUS — SBS — Silicon Bilateral Switch. UST - unipolar Junction Transistors. «SCR is unidirectional device allowing the current to flow in only one direction while the triac is bi-directional type and may be thought as two SCRs connected in antiparallel. * Once a thyristor “fires’, current continues to flow until the voltage across the into conduction a number of In order to trigger thyristot e been developed, which with suitable circuiting can control the point at which thyristor begin to conduct, thus a.c and d.c power variation is made possible allowing light, heat and motor speed control to be carried out economically and efficiently. device reverses. triggering devices hav - Steady Slate inverter output voltage - Application of inverters : 5. ELECTRIC DRIVES - DC Motor drives - DC Motor control circuits - DC Motor speed controllers - AC machine drives - AC motor controls. - Motor control Systems 6. HIGH FREQUENCY POWER SOURCES AND HEATING - High frequency power source - Induction heating process - Dielectric heating process - Operation of Resistance heating process ¢ - Eddy current heating process - Solar heating systems BOOKS 1, Industrial and Power Electronics By G.K. Mithal and Dr. Maneesha Gupta 2. Power Electronics By Dr. P.S. Bimbhra 3, Fundamentals of Power A. Chakvabarti 4, Industrial Electronics By Neil Morris _ 5, Electrical Technology SiP B Edward Hughes Electrical Technology By A.K. Theraja & BL Theraja Electronics and Drives 6. if WY Hy Ghatalatin Atal Vie (Heth rena nan fe Vera te ee pelatiedl by treaty ote be SAWANT AY A TEE featiabitiinis atte PRI ati EIBRE Elie pate errant be Ssitied WY Hy IPN Anant ail Ahoa apes ab Ane enter tit we Mfede Te CANANE HWAN FING GE thee Ftias AHP SMES Annipataties dee agqueaee ab Ha cntTee tit ae hi Awol aT VUHEOE apyiedte at the Hawe at HEE thatetetet Were ve the edie tee ihe Fete wane SOD AP HION tah pilin (IER HeadtE b diet v Hate trintinn ya wh yh \ (s Ww H opt " . " dy dy he be ) » » owe, | a I I SOR avoetranivon model Un the of state of a transistor, collector current te ii related (o emitter current ty as toma ten Where at ix eommonsbase current pain Aye and Teno in common-base Akage Current collector: base junetion, anode current Land Te collector current \ sistor Qi: emitter current I) ly lo = anh t tenor Por 2, Ter = aah | lanes The sum of the avo collector current is equal to external eireuit current [, entering, at anode terminal A, Inn Tort ley Tech} Tenor | ooh} tenos When gate current is applied, then To Int Ty. Substituting this value of hin the above Eq. gives; Lae cul + tenant ce (lt) 4} Tenoy ° The Istor ts ine latched in al differences between SCH and Tra A SCR is timed on by a pate signal, it fo traneistor rut be yy patate duc One continuous (0 internal repenerative action whe hase sigenal ter romuin inv on-state Jo onder to turnott a SC Rn, anote-wathode terminals Wh is remove 6 voltage must be have signal A reve «off when ‘CR may switeh from a non-conducting sta wh + to conducting state throuy several ways, a“) ay qu) (iv) (vy) (OPRO Forward voltage trigger: When anode to cathode forward voltage of SCF 1s increased with gate act kept open, the reverse bias junction J) suffers an avalanche breakdown at a voltage Vio. At this voltage, thyristor changes state from OFF state to ON state characterized by low voltage drop acros SCR and a large forward current in practice. This method of triggering not employed as it may result in damage to the device. Gate Triggering: In this method, which is widely used, forward anode to cathode widely used, forward anode to cathode voltage is kept at a value much lower than Vpo, and a positive voltage signal of suitable is applied at the gate resulting in triggering of the thyristor from OFF to ON state, The gate signal may be in form of D.C voltage, pulse voltage or sinusoidal voltage. Thermal triggering: Under forward blocking state, most of the applied voltage appears across the reverse bias junction Jz, This large voltage ross J along with the leakage current way causes enough dissipation of energy as heat at Jz, This increases in temperature causes further increase in the leakage current through J. This is a cumulative process and may turn on the SCR at suitably high temp. dv/dt triggering: Under forward bias condition, J; and Js are forward biased whereas J> is reverse biased . This J2 behaves as a capacitor. Now if the forward voltage is applied suddenly, a charging current flows tending to turn ON the device. let the applied voltage be V, charge Q and junction capacitance Cj, then the instantaneous current ic due to suddenly aynitude applied voltage is ic = dQMdt = d(Cyv) dt = G; dvidt. If assumed C; is almost constant, when dv/dt is large, the device may turn- ON even when the voltage across the device is small. Radiation Triggering/Light triggering. In this method, additional energy for triggering is imparted by light radiation or some other radiation, This additional energy results in generation of electron-hole pairs thereby increasing the concentra ion of change carries, hence an instantaneous flows of current within the device and triggering of the device, ¢.g, in LASCR, wo 10 wn °) cf tion’ reamete vies thyristor to turn it commutation Caney CTEM 10 zero to make it tn OFF. This proc Commun Commutation signifies transfer of current from one path to another ion methods are classified into 4 groups:- 1) Natural or line commutation fe It makes use of the alternating on reversing nature of a.c voltage to cause transfer of current, As the ac current passes through zero from positive to negative side, a reverse voltage appears across the thyristor turning it off. It is mainly used IP ae voltage controllers; phase controlled rectifiers, inventers, step dows _. cycloconverters etc, ii) Forced commutation i Thyristor is turned OFF by reducing the device current to zero and maintained at zero for sufficiently long time to permit removal of change carriers. Used in D- ___ choppers and inventers. iii) Load commutation i Land C are connected in series with the load impedance or C in parallel with the load impedance such that the overall circuit is under damped. Used in services inventers. iv) External pulse Commutation oo Uses an external commutating pulse applied through a transformer. This circuit has very high efficiency. However it is not popularly used. Application : - SCR behave as a bistable switch, either non-conducting or conducting. Typical applications are in regulated power supplies, de to ac inverters, radar modulations, servo systems and latching relays etc. DIAC It is a three-layer dual-trigger diode that is bi-directional thus produces an output pulse on cach half cycle. It functions like a pair of back-to-back trigger diode. Hence, ft can be switched from off to on state for either polarity of the applied voltage. this feature, DIAC are frequently used as triggering devices in TRIAC Because of phase control circuit used for light dimming, universal motor speed control and heat control. Operation Conduction occurs in the DIAC when the breakover voltage is reached in either polarity across the terminals. When T, is positive with respect to To, and if voltage Viz exceeds Vpo1, then the structure PNPN conducts. Similarly when ) is positive with respect to T; and if voltage V2 exceeds Vpo2, the structure PNPN conducts. || 3. AL voltages less peace _ cu the breakover volta a nt flows th 3 Nn 'S through the devi oe trons and holes at the depletnn . leviee. The device remai neioel silos Hains pri AL point A when the conducting, charac! i IBC, @ Ver ‘all a ge amount of current called the ig abe current produced due to the drift tically in nov ufficient to cause conduction in n-conducting mode ~ the blocking Voltage level , reaches the bre: . ils conduction, the ‘eva kover voltage, the device starts rent flowing in'the d ievien exhibits negative resistance hoe farts decreasing. ‘This portion of shore arts increasing and the voltage tN conduction state, characteristic shown by AB is known as Similar explanatior chariatorichd pe Rois good for the negative half-cycle of triggering. The first quadrant. ‘This is t the third quadrant will be @ replica of that obtained in the device, is is because the doping level is same at the two junctions of the Once the device sta . bine td bs antic ey cc conducting, the current flowing through it is very high which DIAG, ec imited by some external resistance. a ‘s are mainly used as a trigger device for TRIAC that require either positive or negative gate pulses to turn ON. During 8. The cun ~ve), op ----- = y Yeo: . ‘locking Conducting stale Ty state of 1! negative half cycle + . Symbol and V-1 characteristics of DIAC TRIAC A triac is a semi-conductor device whose operation is similar to that of two SCR connected in reverse parallel. A triac is able to conduct a large conduct a large current in either direction or the other by a gate pulse of appropriate polarity. Operation ; ‘The gate terminal is connected to both P2 and Ns so that the triac can be turned on by cither the positive going or negative going pulse of gate current. The input and output of main terminal MT}, and MT2 respectively which are connected to both an N-type and P-type region i.e. MT) is connected to Ni and P; and hence it is possible for current to flow either: a) With MT? positive with respect to MTI. The path will be Pi, Nz Pr and Na. b) With MT) positive with respect to MT). The path will be P2, No, Pi and Ni. When the triac is ON, @ current flowing in MT; and MT? is known as the principal rrent. As with SCR, the triac can be turned on by; es 6 am ii) Exceoding nou ) Exceedin, ent iii 18 the ) By allowing: nee break maxi 0 haximum dw/dt 1 MTs apy leds voltage AM value, PPlied Voltage tw 0 increaye at wr at a rate in excess OF tatic Charae ler sties of a TRIAC MT? Mri MI? negative (a) (b) (a) civeuit Symbol and (b) static ¥-1 eharacterisics of atria Wi stars cul oi sea MT: positive with respect to MT1, the triac operates in the 1 quadrant of its static dl aracteristics, if it is not triggered, the small forward current increases slowly with inerease in voltage until the breakdown voltage Vso is reached and then the current increases rapidly. The device can b current and the characteristics $l ‘ed until the main must be maintain When MT! is positive with respect current focus on the ‘opposite direction. The triac quadrant by an application of either a positive oF negat ter forward current by injecting suitable gate how the effect of increasing gate current. The Bate current current is at least equal to the latching current. t to MT2, the triac operates in the 3 quadrant and the e tuned ON at a small can be triggered to operate in either pulse ic. tive gale current \> arrangements shown in (a) polarity voltage for both then derived from the module, (c) are most ofler the gate and the MT> ter ‘nN employed since sane ani ployed since the use of the same ' rmina ya ry c et this consideaty ia ali the power supplies to be ied the circuiting of the trigger and Diss Disadvantages of TRIAC over SCR Triac car i ac can be trigger it iti hee. 7 rigged With positive or negative polarity voltage. ed a diode to protect against reverse voltage. Disadvantages ¢ low dv/dt votin a © Reliability is less compared to SCR. Triggering act for triac a careful consideration. 4, UJT (Unijuction Transistors) There are three types: i) Standard UIT ii) Complementary UST (CUIT) iii) Programmable UJT (PUT) The UIT. CUIT and PUT are widely used for generation of trigger pulses for SCRS. CUJT This is a silicon planar monolithic integrated circuit. Tt has unijuction characteristics with superior stability, much tighter intrinsic standoff ratio (n) distribution and low voltage. CUJT characteristic are like those of standard UJT except that the current and voltage applied to it are of opposite polarity. It can be used in many applications that use the standard UJT. Their unique stability ‘and uniform property make them ideal for stable oscillators, timers and frequency dividers. PUT PUT is a three terminal planar PNP device in the standard plastic low-cost TO-98 package. The terminals are designated at anode, gate and cathode. PUT offers many advantages over conventional UJT. The designer selects Ri, and R2 to program unijuction characteristics to meet particular needs. A definite voltage is applied to the gate of PUT through the voltage divider action of Roand Ri. The voltage is given by Ve=_RiV. Rit Re The capacitor is charged Ve from a voltage V through R. when the anode voltage Ve exceed the gate voltage Vai, the PUT start conducting and triggers the SCR. 1A y UIT Relaxati xation Oscillator 7, ult is an extremely ey riggering TRIACs, Below is a basi cient swite circuit oruaetly used as triggering device fro SCRs and T as saw tooth voltage generator. 1, Hpk 4 Basic circuit and voltage waveform of UIT oscillator Ri and Rz are kept small compared with Roi and Rex. When Von is applied, C charges through R exponentially toward Vap with time constant t1 = RC. During this charging process, emitter circuit of UJT remains open circuit. At this point Vc = Ve Ve= Ve = Von (1- e*®°) When Ve =Ve reaches Vp= nVnu + Vo, the Pn junction between E and B, breaks idly discharges through low value Ri down and UJT turns ON. Immediately C rapi with very slow time constant t2 = RC. When Ve drops to the Vv, UJT turns off and the cycle is repeated. Let Ti, be the time taken by C to change from Vv to Vp through resistor R. Then Vp=1Veo + Vo Vv + Vop (1-0-7!) Assuming that Vp=Vv the above equation gives na lee Hence Ti = RC In (1/I-n) Total time period of one cycle =T=Ti+T2 But Tz <

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