[ELE Technological University N ‘school of Electronics and Communication Prakalp Screening Test 2023, £ - _ aaaee » ‘Name: SRN: a Ne Ph.No ‘comedK/CET Rank: a) 274W GPA b) 276W ee <)285w Duration : 75 mins 4) 291 Circuit Analysis A practical DC current source provides 20 1. Inthe circuit shown, the Norton kW toa 500 load and 20 kW to a 2000 equivalent resistance across terminals a- Joad, The maximum power, that can bis, : drawn fromit, is (A) 22.5 KW (B) 45 KW ‘A.2.333 B. 1.333 {c) 30.3 kw (D) 40 KW €.1.255 0. 3.333 i : RB a 20 40 yn ob 6. Inthe circuit of the figure shown below 2. Determine V; and the power being dependent source supplied by the dependent current source in the figure below 500 ff zon gon oO AS»; sah) ony, Oisnological University jeted (ay 100%e* V (B) 200%" y ( 4001e (©) 80016" 10a ) 2008 Y —— a 3A sa. omPS= yy * 9, The transformed voltage across the 60 uF capacitor is given by — Gos+816+4) current through the capacitor V8): The ini is {a)o.12mA (8) 012. mA (c}0.48 mA (0) 048. mA 10. Find the value of Vi an. uv) x (ay1ov (8)10V (Q7Vv (0)7V. 11, Find (h] w is closed 12. Inthe circuit shown switch S\ ns, at t=0. Assuming zero initial cond! the value of vet) at t=4 sec IS oe 38 A. 2,528 B. 4.234 13.343 0.4.343 43, nthe circuit shown, at resonance the amplitude of sinusoidal voltage across the capacitor ist 49 0.4m 4 1O0cosett (Watts) & =r ier A. 45 B. 12 .24 D.25 Analog Electroni 4, AMOSFET in saturation has a drain current of 1 mA for VDS = 0.5 V. If the ‘channel length modulation coefficient is 10.05 V", the output resistance (in kA) of the MOSFET is. 2. For the NMOSFET in the circuit shown, the threshold voltage is Vth, where Vth > (0. The source voltage VSS is varied from 0 to VDD. Neglecting the channel length ‘modulation, the drain current ID as @ function of VSS is represented by cin aeological University bipolar transistor biased in the forward-active region the base cur esuA and the collector current coe Is 2.7 mA. The value of ati Is ke (a) 0.988 (8) 54 (c) 0.982 (0) 0.018 4. Vec ay 10% wie aia sv faysav (8) 6.2V {c)4.1V (0) None of the above 5, The parameter of the transistor are Viv 21.2 V, Kn= 0.5 mA / V? and A= 0. The voltage Vos is a) 1.69 V (B) 4.52 V (c) 1.84 (D)0 ay oun 6. Determine ly and Vos for the circuit elven below. Given that Vo=7V 7. Asilicon diode sald to be a 1-mA device splays a forward voltage of 0.7 V 9 nn valuate the Junction What scaling ly for a 1-A diode of at conducts 1A current of 1 mA. Es sealing constant Is- constants would app! the same manufacture @ at 0.7 V? 8, The given circuit behaves 25? with tts negative peak at -50V By postive epper with its positive peak at SY ith its positive peak at 6OV ) positive clipper wl Fh postive elipper with ts negative peak at 20V 1) positive clipper to establish a drain ‘What Is the effective .n drain and source at eiv 9, Design the circul voltage of 0.1 V. resistance betwee this operating point? Let and Vin kn (w/t}=1. ma/V? y ih 10. Consider an Ideal long channel nMOSFET (enhancement-mode) with gate length 10 jum and width 100 um. The product of lectron mobility (Ha) and oxide capacitance per unit area (Cox) IS HaCox = 4 mA/V?, The threshold voltage of the transistor Is 1 V. For a gate-to-source voltage Vos = [2 ~ sin(2t)] V and drain-to source voltage Vos= 1 V (substrate connected to the source), the maximum value of the draln-to-source current Is A. 40mA B. 20mA, c.15mA, D.smasider the 2-bit multi sider ltiplexer, a ital Electronics jor of Cand D, the values 4, Shown in the figure. For OUTPUT to be the Wy Ay and Ay are _C. Inhalt subrector cul wth X ne ¥ a inputs the Brom one Difference (N= X-¥)aregven by OM=xXoYN=XY | 3 icone elton toen nconinaedby Seo consider the uitplexer based lol chu shown nh MS Or-wES ~ w o Mux] Ff OFS HIS; +S 1 Ors S45 a J 4 The Boolean expression eves IN(AT) * F simplifies to