Ordering aumber:EN 1334C. 2SA1319/2SC3332 PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features + High breakdown voltage. + Excellent hee linearity. + Wide ASO and highly resistant to breakdown, + Adoption of MBIT process. ( ):28a1319 ‘Absolute Maximum Ratings/T, = 25°C unit Collector to Base Voltage Veso (1100 V Collector to Emitter Voltage Veo (i160 V Emittar to Bate Voltage Veso 6 ov Collector Current Ic (107A Collector Current(Pulse) Icp (5 A Collector Dissipation Po 700 mW Junction Temperature Tj 150°C Storage Temperature Teg —s6t0+150 °C Electrical Characteristics/Ty-25°C. min typ max unit Collector Cutott Current leso——Vep-(-1120V, 1-0 (101 ya Emitter Cutoff Current lego Vee=(~)4V, Ic=0 10.1 pa DC Current Gain het Vce=(-I5V, Ic=(-}100m 100% 400% heet2) — Vce={-)8V, Ic={-10ma 80 Gainbandwidth product t Voe=(-)10V, Io=(-)50mA, 120 MHz Common Base Output Capacitance cob Veg=(-)10V (ne pF Collector to Emitter Seturation — Vc tsar) I=(-)250mA, Ig=(—)25mA 012 04 Vv Voltage (0.20) (06) Vv Base to Emitter Saturation Voltage VeE(sat) —1C=(—)250mA, Ip=(—)25mA, (085 (1.2 v Collector to Base Breakdown V@r)cBo !e=(-)104A, le (-1180 v Voltage Collector to Emitter Breakdown VigR)CEO._Ic=(-!1mA, Ree (1160 v Voltage Emitter to Base Breakdown Voltage WiBRIEBO !E=(-)10HA, 1c=0 (6 v Turn-on Time ton At specified test circuit (60160 ns Storage Time tig a (900) 1000 ns Fall Timo tf cy (60}60 ns 4: The 25A1319/28C3322 are classified by 100mA hee as follows: Package Dimensions unit: mm ) 20038 Switching Time Test Circult (For PNP. the er 22, one arity is 2 ; fevers) le iy 2o1e1 $0 uo 3 sEDEC: 70-92 B. Base i EIAD + SC-43 c. Collector Unit(Resistance : 0 , Capacitance: F) SANYO: NP fe, mutter 3207KI/N275KI/3135KI/O183KI,TS No.1334-1/328A1319/28C3332 Ic = Wor Ie = Woe SATS eset [2803332] Bel Pulse _| ie cs 22 foal Eo 3 ~~ 8 = g { — t 80 | i ae TT [ ea ae Be fi: Ht or Oe 08 0.8 10 Collector to Emitter Voltage, Voe ~ V Eeaacid criumrvontec econ! c > Vee Ie = ver Saeed | PECSBR) ‘ ‘ aoe Pulse H nee ited 2 & “oh Z ge 2, £ : 3 ow 8 B 3 = st & & ° iss 0 0 =m - -0 0 oO ox © © © 0 © Collector to Emitter Voltage, Vce ~ V Collector to Emitter Voltage, Vee ~ V ae Je « Woe ee feb = Yep Tee a gy | t [ee af Coo i eee eee £3 pot | 2 iy ge t Zo i STS & y 3° + é i °~ 3 T 3 3 3m ae 8 6 For PNP, minus] E a signivomited | 8 yo Sa, Feb He HHS Base to Emitter Voltage, Vee — V Collector to Base Voltage, Vea—V : a oy Ic hee - te " 5 5 © DC Current Gain, FE 8 = T00 Tm T3379 Teo? Collector Current, Ic — mA Collector Current, Ig — mA No. 19942/32SA1319/2SC3332 fT Ie oe fr - Ie Z T BEATA] Era U Tana Peete T Ee = e Po \ ' :° tT Yat i £ | t a I 34 + itt— He 3 a | 5 ° 0 bs 0 pe = Collector Curent, 1g — mA Collector Current, 1g = mA : Vce(sat) - Ie Aso BF 0 sat) = Bee eee ea Perit rE Fer era Bo R gC Ti y & stl , 2 corey aa S os! ioc : - [sign is ofited 3 Hees Pe =) Collector Curent, te = mA Collector to Emitter Voltage, VCE ~ V 0 tn [ i om Dw ‘Ambient Temperature, Ta — {MNio products deserted or contained herein are intended for use in eurgioal implants, fe-support systems, ‘aerospace equipment, nuclear power contrcl syctoms, vehicloe, dieaster/erme-prevantion equipment and th ko, the faiure of which may directly or indvectly cause inuy, death or property loss. WM Anyone purchasing any products desorbed or containad hersin for an above-mentioned use shall © Accept full responsiifty and indemnity and defend SANYO ELECTRIC CO, LTD.. ite afftiates, Subsidiaries and distibutors and al thor offers and employees, jointly and severaly, against any and all clams and ligation and all damages, cost and expenses associated with such use: ® Wot impose aay responsibly for any fault 0 negigence which may bo cited in any such claim or ‘tigation on SANYO ELECTRIC CO, LTD, its affilates, subsiiaries and distnbutors or ary of ther offce:s and employees jointly or severally. Information (inctuing etcut diagrams and circuit paramoters) herein is for example only: not guarant- 2d for volume production. SANYO beleves information herein i accurate and ralable, but no guarantoas, ‘are mado or implied rogaring ts use or any infringements of intalectual property rghts or other rights of third partiss, “Ne. 1338.3/9