RURG30100

Data Sheet January 2002

30A, 1000V Ultrafast Diode Features

The RURG30100 is an ultrafast diode with soft recovery
characteristics (trr < 110ns). It has low forward voltage drop
and is of silicon nitride passivated ion-implanted epitaxial
planar construction.
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . <110ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V

This device is intended for use as a freewheeling/clamping • Avalanche Energy Rated

diode and rectifier in a variety of switching power supplies • Planar Construction
and other power switching applications. Its low stored charge
and ultrafast recovery with soft recovery characteristic Applications
minimizes ringing and electrical noise in many power
switching circuits, thus reducing power loss in the switching • Switching Power Supplies
transistors. • Power Switching Circuits
Formerly developmental type TA09904. • General Purpose

Ordering Information Packaging

PART NUMBER PACKAGE BRAND JEDEC STYLE 2 LEAD TO-247

RURG30100 TO-247 RURG30100 ANODE

NOTE: When ordering, use the entire part number. CATHODE
CATHODE
(BOTTOM
SIDE METAL)
Symbol
K

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

RURG30100 UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 1000 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 1000 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR 1000 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) 30 A
(TC = 120oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM 60 A
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM 300 A
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 125 W
Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL 30 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ -65 to 175 oC

©2002 Fairchild Semiconductor Corporation RURG30100 Rev. B

 RURG30100

Electrical Specifications TC = 25oC, Unless Otherwise Specified

SYMBOL TEST CONDITION MIN TYP MAX UNITS

VF IF = 30A - - 1.8 V

IF = 30A, TC = 150oC - - 1.6 V

IR VR = 1000V - - 250 µA

VR = 1000V, TC = 150oC - - 1 mA

trr IF = 1A, dIF/dt = 100A/µs - - 110 ns

IF = 30A, dIF/dt = 100A/µs - - 150 ns

ta IF = 30A, dIF/dt = 100A/µs - 90 - ns

tb IF = 30A, dIF/dt = 100A/µs - 45 - ns

RθJC - - 1.2 oC/W

DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 6), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 6).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6).
RθJC = Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.

Typical Performance Curves

200 400

100 100 TJ = 175oC

IR , REVERSE CURRENT (mA)
IF , FORWARD CURRENT (A)

TJ = 175oC 10

TJ = 100oC TJ = 100oC
10 1.0
TJ = 25oC

0.1
TJ = 25oC

1 0.01
0 0.5 1.0 1.5 2.0 2.5 0 200 400 600 800 1000
VF , FORWARD VOLTAGE DROP (V) VR , REVERSE VOLTAGE (V)

FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE VOLTAGE vs REVERSE CURRENT

©2002 Fairchild Semiconductor Corporation RURG30100 Rev. B

 RURG30100

Typical Performance Curves (Continued)

200

IF(AV) , AVERAGE FORWARD CURRENT (A)

35

30
t, RECOVERY TIMES (ns)

150
25
SQUARE WAVE DC
20
100
15
trr
10
50 ta
5
tb
0 0
1 10 50 100 120 140 160 180

IF , FORWARD CURRENT (A) TC , CASE TEMPERATURE (oC)

FIGURE 3. trr , ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. CURRENT DERATING CURVE

Test Circuits and Waveforms

VGE AMPLITUDE AND

RG CONTROL dIF/dt
L
t1 AND t2 CONTROL IF

dIF trr
DUT CURRENT IF
RG SENSE dt ta tb
+ 0
VGE VDD
t1 IGBT -
0.25 IRM
t2 IRM

FIGURE 5. trr TEST CIRCUIT FIGURE 6. trr WAVEFORMS AND DEFINITIONS

I = 1.225A
L = 40mH
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] VAVL
Q1 = IGBT (BVCES > DUT VR(AVL))
L R

CURRENT +
IL IL
SENSE VDD
Q1 I V
VDD
DUT -
t0 t1 t2 t

FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT FIGURE 8. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS

©2002 Fairchild Semiconductor Corporation RURG30100 Rev. B

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FAST  OPTOLOGIC™ SMART START™ VCX™
Bottomless™ FASTr™ OPTOPLANAR™ STAR*POWER™
CoolFET™ FRFET™ PACMAN™ Stealth™
CROSSVOLT™ GlobalOptoisolator™ POP™ SuperSOT™-3
DenseTrench™ GTO™ Power247™ SuperSOT™-6
DOME™ HiSeC™ PowerTrench  SuperSOT™-8
EcoSPARK™ ISOPLANAR™ QFET™ SyncFET™
E2CMOSTM LittleFET™ QS™ TinyLogic™
EnSignaTM MicroFET™ QT Optoelectronics™ TruTranslation™
FACT™ MicroPak™ Quiet Series™ UHC™
FACT Quiet Series™ MICROWIRE™ SILENT SWITCHER  UltraFET 
STAR*POWER is used under license
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4