IRFR320, IRFU320

Data Sheet July 1999 File Number 2412.3

3.1A, 400V, 1.800 Ohm, N-Channel Power Features

MOSFETs • 3.1A, 400V
These are N-Channel enhancement mode silicon gate
• rDS(ON) = 1.800Ω
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a • Single Pulse Avalanche Energy Rated
specified level of energy in the breakdown avalanche mode • SOA is Power Dissipation Limited
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching • Nanosecond Switching Speeds
convertors, motor drivers, relay drivers, and drivers for high • Linear Transfer Characteristics
power bipolar switching transistors requiring high speed and
• High Input Impedance
low gate drive power. These types can be operated directly
from integrated circuits. • Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Formerly developmental type TA17404.
Components to PC Boards”
Ordering Information Symbol
PART NUMBER PACKAGE BRAND D

IRFR320 TO-252AA IFR320

IRFU320 TO-251AA IFU320 G

NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e., IRFR3209A.
S

Packaging
JEDEC TO-251AA JEDEC TO-252AA

SOURCE
DRAIN
GATE GATE DRAIN
(FLANGE)

DRAIN (FLANGE) DRAIN SOURCE

4-395 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
 IRFR320, IRFU320

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

IRFR320, IRFU320 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 400 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR 400 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 3.1 A
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 2.0 A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 12 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 50 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4 W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS 190 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300 oC
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 260 oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:
1. TJ = 25oC to 125oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V, (Figure 10) 400 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V
Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC - - 250 µA
On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V, 3.1 - - A
(Figure 7)
Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA
Drain to Source On Resistance (Note 2) rDS(ON) ID = 1.7A, VGS = 10V, (Figures 8, 9) - 1.600 1.800 Ω
Forward Transconductance (Note 2) gfs VDS ≥ 10V, ID = 2.0A, (Figure 12) 1.7 2.6 - S
Turn-On Delay Time td(ON) VDD = 200V, ID ≈ 3.1A, RGS = 18Ω, RL = 63Ω, - 10 15 ns
Rise Time tr VGS = 10V - 14 21 ns
MOSFET Switching Times are Essentially Indepen-
Turn-Off Delay Time td(OFF) dent of Operating Temperature - 30 45 ns
Fall Time tf - 13 20 ns
Total Gate Charge Qg(TOT) VGS = 10V, ID = 3.1A, VDS = 0.8 x Rated BVDSS, - 13 20 nC
(Gate to Source + Gate to Drain) IG(REF) = 1.5mA, (Figure 14)
Gate to Source Charge Qgs Gate Charge is Essentially Independent of Operat- - 2.2 3.3 nC
ing Temperature
Gate to Drain “Miller” Charge Qgd - 7.2 11 nC
Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz, (Figure 11) - 350 - pF
Output Capacitance COSS - 64 - pF
Reverse Transfer Capacitance CRSS - 8.1 - pF
Internal Drain Inductance LD Measured From the Drain Modified MOSFET - 4.5 - nH
Lead, 6.0mm (0.25in) from Symbol Showing the
Package to Center Internal Device
of Die Inductances
D
Internal Source Inductance LS Measured From the - 7.5 - nH
Source Lead, 6.0mm LD
(0.25in) from Package to
Source Bonding Pad
G
LS

Thermal Resistance, Junction to Case RθJC - - 2.5 oC/W

Thermal Resistance, Junction to Ambient RθJA Typical Solder Mount - - 110 oC/W

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 IRFR320, IRFU320

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current ISD Modified MOSFET - - 3.1 A
D
Symbol Showing the In-
Pulse Source to Drain Current ISDM - - 12 A
tegral Reverse P-N
(Note 3)
Junction Rectifier
G

S
Source to Drain Diode Voltage (Note 2) VSD TJ = 25oC, ISD = 3.1A, VGS = 0V, - - 1.6 V
(Figure 13)
Reverse Recovery Time trr TJ = 25oC, ISD = 3.1A, dISD/dt = 100A/µs 120 270 600 ns
Reverse Recovery Charge QRR TJ = 25oC, ISD = 3.1A, dISD/dt = 100A/µs 0.64 1.4 3.0 µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 3.1mH, RGS = 25Ω, peak IAS = 3.1A.

Typical Performance Curves Unless Otherwise Specified

1.2 4.0
POWER DISSIPATION MULTIPLIER

1.0
3.2
ID, DRAIN CURRENT (A)

0.8
2.4
0.6

1.6
0.4

0.8
0.2

0 0
0 25 50 75 100 125 150 175 25 50 75 100 125 150
TC , CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE CASE TEMPERATURE

10
ZθJC, TRANSIENT THERMAL IMPEDANCE

0.5
1
0.2

0.1 PDM
0.05
0.1 0.02
t1
0.01
t2
SINGLE PULSE NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-2
10-5 10-4 10-3 10-2 0.1 1 10
t1, RECTANGULAR PULSE DURATION (s)

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

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 IRFR320, IRFU320

Typical Performance Curves Unless Otherwise Specified (Continued)

100 5
OPERATION IN THIS VGS = 10V
VGS = 6.0V
AREA IS LIMITED
BY rDS(ON)
4
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

PULSE DURATION = 80µs
10µs DUTY CYCLE = 0.5% MAX
10
3
100µs
VGS = 5.5V
2
1 1ms
VGS = 5.0V

10ms 1
TJ = MAX RATED VGS = 4.0V VGS = 4.5V
TC = 25oC
SINGLE PULSE DC
0.1 0
1 10 100 1000 0 40 80 120 160 200
VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

5 10
PULSE DURATION = 80µs VGS = 10V PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
VDS ≥ 350V
4
VGS = 6.0V
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

1
3
VGS = 5.5V

TJ = 150oC TJ = 25oC
2
0.1
VGS = 5.0V

1
VGS = 4.0V VGS = 4.5V

0 10-2
0 3 6 9 12 15 0 2 4 6 8 10
VDS, DRAIN TO SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

10 3.0
PULSE DURATION = 80µs PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
NORMALIZED DRAIN TO SOURCE

VGS = 10V, ID = 1.7A

rDS(ON), DRAIN TO SOURCE

8 2.4
VGS = 10V
ON RESISTANCE
ON RESISTANCE

6 1.8
VGS = 20V

4 1.2

2 0.6

0 0
0 3 6 9 12 15 -40 0 40 80 120 160
ID, DRAIN CURRENT (A) TJ , JUNCTION TEMPERATURE (oC)

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

VOLTAGE AND DRAIN CURRENT RESISTANCE vs JUNCTION TEMPERATURE

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 IRFR320, IRFU320

Typical Performance Curves Unless Otherwise Specified (Continued)

1.25 750
ID = 250µA VGS = 0V, f = 1MHz
NORMALIZED DRAIN TO SOURCE

CISS = CGS + CGD

1.15 600 CRSS = CGD
COSS ≈ CDS + CGD
BREAKDOWN VOLTAGE

C, CAPACITANCE (pF)
CISS

1.05 450
COSS

0.95 300

0.85 150 CRSS

0.75 0
-40 0 40 80 120 160 1 2 5 10 2 5 102
TJ , JUNCTION TEMPERATURE (oC) VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
VOLTAGE vs JUNCTION TEMPERATURE

5 100
PULSE DURATION = 80µs PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX ISD, SOURCE TO DRAIN CURRENT (A) DUTY CYCLE = 0.5% MAX
gfs, TRANSCONDUCTANCE (S)

VGS = 0V
4

TJ = 25oC 10
3

TJ = 150oC TJ = 150oC TJ = 25oC

2
1

0 0.1
0 1 2 3 4 5 0 0.3 0.6 0.9 1.2 1.5
ID, DRAIN CURRENT (A) VSD, SOURCE TO DRAIN VOLTAGE (V)

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20
ID = 3.1A

VDS = 320V
16
VGS, GATE TO SOURCE (V)

VDS = 200V
VDS = 80V
12

0
0 4 8 12 16 20
QG(TOT) , TOTAL GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

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 IRFR320, IRFU320

Test Circuits and Waveforms

VDS
BVDSS

L tP
VDS

VARY tP TO OBTAIN IAS

+ VDD
REQUIRED PEAK IAS RG
VDD
VGS -
DUT

tP
0V IAS
0
0.01Ω
tAV

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

tON tOFF

td(ON) td(OFF)

tr tf
RL VDS
90% 90%

+
VDD 10% 10%
RG
- 0

DUT 90%

VGS 50% 50%

PULSE WIDTH
VGS 10%
0

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

VDS
CURRENT (ISOLATED
REGULATOR SUPPLY)
VDD

SAME TYPE Qg(TOT)

AS DUT VGS
12V
0.2µF 50kΩ Qgd
BATTERY
0.3µF
Qgs

D
VDS

G DUT
0

IG(REF) S
0
VDS IG(REF)
IG CURRENT ID CURRENT
SAMPLING SAMPLING
RESISTOR RESISTOR 0

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

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 IRFR320, IRFU320

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4-401