RFD15P05, RFD15P05SM, RFP15P05

Data Sheet July 1999 File Number 2387.5

15A, 50V, 0.150 Ohm, P-Channel Power Features

MOSFETs • 15A, 50V
These are P-Channel power MOSFETs manufactured using
• rDS(ON) = 0.150Ω
the MegaFET process. This process which uses feature
sizes approaching those of LSI integrated circuits, gives • Temperature Compensating PSPICE® Model
optimum utilization of silicon, resulting in outstanding • Peak Current vs Pulse Width Curve
performance. They were designed for use in applications
such as switching regulators, switching converters, motor • UIS Rating Curve
drivers, and relay drivers. These transistors can be operated • Related Literature
directly from integrated circuits. - TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Formerly developmental type TA09833.

Ordering Information Symbol

D
PART NUMBER PACKAGE BRAND

RFD15P05 TO-251AA D15P05

G
RFD15P05SM TO-252AA D15P05

RFP15P05 TO-220AB RFP15P05

NOTE: When ordering, use the entire part number. Add the suffix 9A to S
obtain the TO-252AA variant in the tape and reel, i.e., RFD15P05SM9A.

Packaging
JEDEC TO-220AB JEDEC TO-251AA

SOURCE DRAIN SOURCE

DRAIN (FLANGE) DRAIN
GATE GATE
DRAIN
(FLANGE)

JEDEC TO-252AA

DRAIN
(FLANGE)
GATE
SOURCE

4-96 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
 RFD15P05, RFD15P05SM, RFP15P05

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

RFD15P05, RFD15P05SM,
RFP15P05 UNITS
Drain Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS -50 V
Drain Gate Voltage (RG = 20KΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR -50 V
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V
Drain Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID -15 A
Pulsed (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Refer to Peak Current Curve
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Refer to UIS Curve
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 80 W
Derate above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.533 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG -55 to 175 oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300 oC
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 260 oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:
1. TJ = 25oC to 150oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 11) -50 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA -2.0 - -4.0 V
Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS - - -1 µA
VDS = 0.8 x Rated BVDSS, TC = 150oC - - 25 µA
Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA
Drain to Source On Resistance rDS(ON) ID = 15A, VGS = -10V (Figure 9) - - 0.150 Ω
Turn-On Time tON VDD = -25V, ID ≈ 7.5A, RG = 12.5Ω, - - 60 ns
RL = 3.3Ω, VGS = -10V
Turn-On Delay Time tD(ON) - 16 - ns
(Figures 16, 17)
Rise Time tR - 30 - ns
Turn-Off Delay Time tD(OFF) - 50 - ns
Fall Time tF - 20 - ns
Turn-Off Time tOFF - - 100 ns
Total Gate Charge QG(TOT) VGS = 0V to -20V VDD = -40V, ID = 15A, - - 150 nC
RL = 2.67Ω,
Gate Charge at -10V QG(-10) VGS = 0V to -10V - - 75 nC
IG(REF) = -0.65mA
Threshold Gate Charge QG(TH) VGS = 0V to -2V (Figures 18, 19) - - 3.5 nC

Input Capacitance CISS VDS = -25V, VGS = 0V - 1150 - pF

f = 1MHz (Figure 12)
Output Capacitance COSS - 300 - pF
Reverse Transfer Capacitance CRSS - 56 - pF
Thermal Resistance Junction to Case RθJC TO-220AB, TO-251AA, TO-252AA - - 1.875 oC/W

Thermal Resistance Junction to Ambient RθJA TO-251AA, TO-252AA - - 100 oC/W

TO-220AB - - 62.5 oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage VSD ISD = -15A - - -1.5 V
Reverse Recovery Time tRR ISD = -15A, dISD/dt = -100A/µs - - 125 ns
NOTES:
2. Pulse test: pulse duration ≤ 300ms, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

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 RFD15P05, RFD15P05SM, RFP15P05

Typical Performance Curves

1.2 -16
POWER DISSIPATION MULTIPLIER

1.0

ID , DRAIN CURRENT (A)

-12
0.8

0.6 -8

0.4
-4
0.2

0 0
0 25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC , CASE TEMPERATURE (oC) TC , CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE CASE TEMPERATURE

2
ZθJC, NORMALIZED TRANSIENT

1
THERMAL IMPEDANCE

0.5

0.2

0.1
0.1 PDM
0.05
t1
0.02
0.01 t2
SINGLE PULSE NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
0.01
10-5 10-4 10-3 10-2 10-1 100 101
t1 , RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

-100 -200
TC = 25oC VGS = -20V TC = 25oC
IDM , PEAK CURRENT CAPABILITY (A)

TJ = MAX RATED FOR TEMPERATURES ABOVE 25oC

DERATE PEAK CURRENT
-100 CAPABILITY AS FOLLOWS:
ID , DRAIN CURRENT (A)

100µs
 175 – T C
I = I 25  ----------------------
 150 
-10
1ms

VGS = -10V
OPERATION IN THIS 10ms
AREA MAY BE TRANSCONDUCTANCE
100ms
LIMITED BY rDS(ON) DC MAY LIMIT CURRENT
IN THIS REGION
-1 -10
-1 -10 -100 10-5 10-4 10-3 10-2 10-1 100 101
VDS , DRAIN TO SOURCE VOLTAGE (V) t, PULSE WIDTH (s)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

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 RFD15P05, RFD15P05SM, RFP15P05

Typical Performance Curves (Continued)

-50 -40
PULSE DURATION = 80µs VGS = -10V
STARTING TJ = 150oC
DUTY CYCLE = 0.5% MAX
IAS , AVALANCHE CURRENT (A)

TC = 25oC
STARTING TJ = 25oC VGS = -8V

ID , DRAIN CURRENT (A)

-30
VGS = -20V
-10 VGS = -7V
-20

VGS = -6V
If R = 0 -10
tAV = (L) (IAS) / (1.3RATED BVDSS - VDD) VGS = -4.5V
VGS = -5V
If R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
-1 0
0.1 1 10 100 0 -1.5 -3.0 -4.5 -6.0 -7.5
tAV, TIME IN AVALANCHE (ms) VDS , DRAIN TO SOURCE VOLTAGE (V)

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY FIGURE 7. SATURATION CHARACTERISTICS

-40 2.5
IDS(ON) , DRAIN TO SOURCE CURRENT (A)

VDD = -15V PULSE DURATION = 80µs

PULSE DURATION = 250µs -55oC 25oC NORMALIZED DRAIN TO SOURCE DUTY CYCLE = 0.5% MAX
-32 DUTY CYCLE = 0.5% MAX ON RESISTANCE 2.0 VGS = -10V, ID = -15A

-24 1.5
175oC

-16 1.0

-8 0.5

0 0
0 -2 -4 -6 -8 -10 -80 -40 0 40 80 120 160 200
VGS , GATE TO SOURCE VOLTAGE (V) TJ , JUNCTION TEMPERATURE (oC)

FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

2.0 2.0
VGS = VDS
ID = -250µA
NORMALIZED DRAIN TO SOURCE

ID = -250µA
BREAKDOWN VOLTAGE
THRESHOLD VOLTAGE

1.5 1.5
NORMALIZED GATE

1.0 1.0

0.5 0.5

0 0
-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200
TJ , JUNCTION TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
JUNCTION TEMPERATURE VOLTAGE vs JUNCTION TEMPERATURE

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 RFD15P05, RFD15P05SM, RFP15P05

Typical Performance Curves (Continued)

1400 -50 -10.0

VDS , DRAIN TO SOURCE VOLTAGE (V)

VGS , GATE TO SOURCE VOLTAGE (V)

CISS VDD = BVDSS VDD = BVDSS
1200

-37.5 -7.5
C, CAPACITANCE (pF)

1000
VGS = 0V, f = 1MHz RL = 3.33Ω
CISS = CGS + CGD IG(REF) = -0.65mA
800
CRSS = CGD VGS = -10V
COSS ≈ CDS + CGS -25 -5.0
600 0.75 BVDSS 0.75 BVDSS
COSS 0.50 BVDSS 0.50 BVDSS
400 0.25 BVDSS 0.25 BVDSS
-12.5 -2.5

200
CRSS
0 0 0.0
0 -5 -10 -15 -20 -25 IG(REF) IG(REF)
20 t, TIME (ms) 80
VDS , DRAIN TO SOURCE VOLTAGE (V) IG(ACT) IG(ACT)

NOTE: Refer to Intersil Application Notes AN7254 and AN7260

FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT

Test Circuits and Waveforms

VDS
tAV

L 0

VARY tP TO OBTAIN
REQUIRED PEAK IAS RG
-
VDD
+

0V DUT VDD
tP IAS
VGS
VDS
IAS tP
0.01Ω
BVDSS

FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS

tON tOFF

td(ON) td(OFF)

tr tf
0
RL 10% 10%

DUT - VDS
VDD 90% 90%
RG
VGS + VGS
0
10%

50% 50%
PULSE WIDTH
90%

FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS

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 RFD15P05, RFD15P05SM, RFP15P05

Test Circuits and Waveforms (Continued)

VDS
VDS
RL Qg(TH)
0

VGS = -2V
VGS
- -VGS VGS = -10V
VDD
+ Qg(-10)
VGS = -20V
DUT
VDD
Ig(REF)
Qg(TOT)

0
Ig(REF)

FIGURE 18. GATE CHARGE TEST CIRCUIT FIGURE 19. GATE CHARGE WAVEFORMS

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 RFD15P05, RFD15P05SM, RFP15P05

PSPICE Electrical Model

.SUBCKT RFP15P05 2 1 3 REV 9/06/94

CA 12 8 1.6e-9
CB 15 14 1.47e-9 LDRAIN
5
CIN 6 8 1.09e-9 10 2
DPLCAP DRAIN
DBODY 5 7 DBDMOD RSCL1
DBREAK 7 11 DBKMOD RSCL2
DPLCAP 10 6 DPLCAPMOD 5
51 ESCL
EBREAK 5 11 17 18 -73.0
+
EDS 14 8 5 8 1 EBREAK
17
EGS 13 8 6 8 1 - 6 RDRAIN 18 -
ESG
ESG 5 10 8 6 1 +
8 16
EVTO 20 6 8 18 1 VTO
- DBODY

+
EVTO MOS2
GATE RGATE 21
-

+
IT 8 17 1 9 18 11
1 20 8 MOS1
LGATE 6
LDRAIN 2 5 1e-9
LGATE 1 9 6.73e-9 DBREAK
RIN CIN
LSOURCE 3 7 6.69e-9 RSOURCE LSOURCE
8
3
MOS1 16 6 8 8 MOSMOD M = 0.99 SOURCE
MOS2 16 21 8 8 MOSMOD M = 0.01
7
RBREAK 17 18 RBKMOD 1 S1A S2A
12 15 RBREAK
RDRAIN 50 16 RDSMOD 63.6e-3 13 14 17 18
RGATE 9 20 7.37 8 13
RIN 6 8 1e9 S1B S2B
13 RVTO
RSCL1 5 51 RSCLMOD 1e-6 CB
RSCL2 5 50 1e3 CA IT 19
RSOURCE 8 7 RDSMOD 46.5e-3 + + 14 -
RVTO 18 19 RVTOMOD 1 6 5 VBAT
EGS 8 EDS 8
- - +
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD

VBAT 8 19 DC 1
VTO 21 6 -0.65

ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/35,4))}

.MODEL DBDMOD D (IS = 1.27e-13 RS = 1.62e-2 TRS1 = 1.35e-3 TRS2 = -4.33e-6 CJO = 1.25e-9 TT = 7.97e-8)
.MODEL DBKMOD D (RS = 2.54e-1 TRS1 = 4.54e-3 TRS2 = -1.12e-5)
.MODEL DPLCAPMOD D (CJO = 285e-12 IS = 1e-30 N = 10)
.MODEL MOSMOD PMOS (VTO = -3.78 KP = 6.97 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBKMOD RES (TC1 = 9.15e-4 TC2 = -4.0e-7)
.MODEL RDSMOD RES (TC1 = 5.47e-3 TC2 = 1.37e-5)
.MODEL RSCLMOD RES (TC1 = 1.9e-3 TC2 = -7.5e-6)
.MODEL RVTOMOD RES (TC1 = -3.71e-3 TC2 = -2.41e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 3.65 VOFF = 1.65)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.65 VOFF = 3.65)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.60 VOFF = -4.40)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.40 VOFF = 0.60)

.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global
Temperature Options; authored by William J. Hepp and C. Frank Wheatley.

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 RFD15P05, RFD15P05SM, RFP15P05

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