Bulletin I27125 rev.

A 04/99

P100 SERIES
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS

Features
Glass passivated junctions for greater reliability 25A
Electrically isolated base plate
Available up to 1200 V RRM, V DRM
High dynamic characteristics
Wide choice of circuit configurations
Simplified mechanical design and assembly
UL E78996 approved

Description
The P100 series of Integrated Power Circuits
consists of power thyristors and power diodes
configured in a single package. With its isolating
base plate, mechanical designs are greatly simpli-
fied giving advantages of cost reduction and
reduced size.
Applications include power supplies, control cir-
cuits and battery chargers.

Major Ratings and Characteristics

Parameters P100 Units

ID 25 A

@ TC 85 °C

IFSM @ 50Hz 357 A

@ 60Hz 375 A
2
It @ 50Hz 637 A 2s

@ 60Hz 580 A 2s

I2√t 6365 A2√s

VRRM 400 to 1200 V

VINS 2500 V

TJ - 40 to 125 °C

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P100 Series
Bulletin I27125 rev. A 04/99

ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM maximum repetitive VRSM maximum non- VDRM maximum IRRM max.
Type number peak reverse voltage repetitive peak reverse repetitive peak off-state @ TJ max.
voltage voltage
V V V mA
P101, P121, P131 400 500 400 10

P102, P122, P132 600 700 600

P103, P123, P133 800 900 800

P104, P124, P134 1000 1100 1000

P105, P125, P135 1200 1300 1200

On-state Conduction
Parameter P100 Units Conditions
ID Maximum DC output current 25 A @ TC = 85°C, full bridge
I TSM Max. peak one-cycle 357 t = 10ms No voltage
I FSM non-repetitive on-state 375 t = 8.3ms reapplied
A
or forward current 300 t = 10ms 100% VRRM
315 t = 8.3ms reapplied Sinusoidal half wave,
2 2
I t Maximum I t for fusing 637 t = 10ms No voltage Initial TJ = TJ max.
580 2 t = 8.3ms reapplied
A s
450 t = 10ms 100% VRRM
410 t = 8.3ms reapplied

I2√t Maximum I2 √t for fusing 6365 A2√s t = 0.1 to 10ms, no voltage reapplied

I 2t for time tx = I 2√t . √tx

V T(TO) Max. value of threshold voltage 0.82 V TJ = 125°C

r t1 Max. level value of on-state

12 mΩ TJ = 125°C, Av. power = VT(TO) * IT(AV) + rt + (IT(RMS)) 2
slope resistance

V TM Max. peak on-state or

1.35 V TJ = 25°C, ITM = π x I T(AV)
V FM forward voltage drop

di/dt Maximum non repetitive rate of TJ = 125°C from 0.67 VDRM

200 A/µs
rise of turned on current ITM = π x IT(AV), I g = 500mA, tr < 0.5µs, tp > 6µs

IH Maximum holding current 130 mA TJ = 25°C anode supply = 6V, resistive load, gate open

IL Maximum latching current 250 mA TJ = 25°C anode supply = 6V, resistive load

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 P100 Series
Bulletin I27125 rev. A 04/99

Blocking
Parameter P100 Units Conditions

dv/dt Maximum critical rate of rise of

200 V/µs TJ = 125°C, exponential to 0.67 VDRM gate open
off-state voltage
IRRM Max. peak reverse and off-state
10 mA TJ = 125°C, gate open circuit
IDRM leakage current at VRRM, VDRM

IRRM Max peak reverse leakage current 100 µA TJ = 25°C

50Hz, circuit to base, all terminal shorted,

VINS RMS isolation voltage 2500 V
TJ = 25°C, t = 1s

Triggering
Parameter P100 Units Conditions
PGM Maximum peak gate power 8
W
PG(AV) Maximum average gate power 2
IGM Maximum peak gate current 2 A
- VGM Maximum peak negative
10
gate voltage

VGT Maximum gate voltage required 3 V T J = - 40°C

to trigger 2 T J = 25°C Anode Supply = 6V resistive load

1 T J = 125°C

IGD Maximum gate current 90 T J = - 40°C

required to trigger 60 mA T J = 25°C Anode Supply = 6V resistive load
35 T J = 125°C
VGD Maximum gate voltage
0.2 V TJ = 125°C, rated VDRM applied
that will not trigger
IGD Maximum gate current
2 mA TJ = 125°C, rated VDRM applied
that will not trigger

Thermal and Mechanical Specification

Parameter P100 Units Conditions
TJ Max. operating temperature range -40 to 125
°C
T Max. storage temperature range -40 to 125
stg
RthJC Max. thermal resistance, 2.24 K/W DC operation per junction
junction to case
RthCS Max. thermal resistance, 0.10 K/W Mounting surface, smooth and greased
case to heatsink
T Mounting torque, base to heatsink 4 Nm A mounting compound is recommended and the torque
should be checked after a period of 3 hours to allow for the
spread of the compound

wt Approximate weight 58 (2.0) g (oz)

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P100 Series
Bulletin I27125 rev. A 04/99

Circuit Type and Coding *

Circuit "0" Circuit "2" Circuit "3"
Terminal Positions

G1 G1 G2 G3 G1

Schematic diagram AC1

AC1 AC2
diagram AC2 AC1 AC2

G2 G4 G2

(-) (+) (-) (+) (-) (+)

Single Phase Single Phase Single Phase

Hybrid Bridge Hybrid Bridge All SCR
CommonCathode Doubler Bridge
Basic series P10. P12. P13.
With voltage P10.K P12.K P13.K
suppression
With free-wheeling P10.W - -
diode
With both voltage
suppression and P10.KW - -
free-wheeling diode
* To complete code refer to voltage ratings table, i.e.: for 600V P10.W complete code is P102W

Outline Table
4.6 (0.18)

12.7 (0.50) 12.7 (0.50) 1.65 (0.06)

4.6 (0.18)

25 (0.98) MAX.
15.5 (0.61)
2.5 (0.10) MAX .

MAX.

63.5 (2.50)

45 (1.77) Faston 6.35x0.8 (0.25x 0.03)

5.2 (0.20)

32.5 (1.28) MAX.

23.2 (0.91)

33.8 (1.33)

48.7 (1.91)

All dimensions in millimeters (inches)

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 P100 Series
Bulletin I27125 rev. A 04/99

60
Maximum Total Power Loss (W)

R
50

th
SA
2

=
K/

1.
W

5
K/
40

W
-D
3K

el
/W

ta
30

R
180°
(Sine)
5 K/
W
20
7 K/
W
P100 Series
10
T = 125°C 1 0 K/
J W

0
0 5 10 15 20 25
0 25 50 75 100 125

Total Output Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 1 - Current Ratings Nomogram (1 Module Per Heatsink) Maximum Average On-state Power Loss (W)
Maximum Average On-state Power Loss (W)

15 20
180° DC
120° 180°
90° 120°
60° 15 90°
10 30° 60°
30°
RMS Limit
10
RMS Limit
Conduction angle
Conduct ion Period
5
5 P100 Series
P100 Series
T J = 125°C T J = 125°C
Per Junction Per Junction
0 0
0 5 10 15 0 5 10 15 20
Average On-state Current (A) Average On-state Current (A)
Fig. 2 - On-state Power Loss Characteristics Fig. 3 - On-state Power Loss Characteristics

1000
Maximum Allowable Case Temperature (°C)

130
Instantaneous On-state Current (A)

Fully Turned.on
T J = 25 °C
120
180°
(Sine) T J = 125 °C
110 180° 100
(Rect)
100

90 10

P100 Series
80 Per Module P100 Series
Per Junction

70 1
0 5 10 15 20 25 30 0 1 2 3 4 5 6

Total Output Current (A) Instantaneous On-state Voltage (V)

Fig. 4 - Current Ratings Characteristics Fig. 5 - On-state Voltage Drop Characteristics

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P100 Series
Bulletin I27125 rev. A 04/99

350 400

Peak Half Sine Wave On-state Current (A)

Peak Half Sine Wave On-state Current (A)

At Any Rated Load Condition And With Maximum Non Repetitive Surge Current
Rated VRRM Applied Following Surge. Versus Pulse Train Duration. Control
Initial T J = 125°C 350 Of Conduction May Not Be Maintained.
@ 60 Hz 0.0083 s Initial T J = 125°C
300 No Voltage Reapplied
@ 50 Hz 0.0100 s
300 Rated V RRM Reapplied

250 250

200
200

P100 Series 150

P100 Series
Per Junction Per Junction
150 100
1 10 100 0.01 0.1 1
Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 7 - Maximum Non-Repetitive Surge Current

10
(K/W)

Steady State Value:

RthJC = 2.24K/W
thJC

(DC Operation)
Transient Thermal Impedance Z

0.1 P100 Series

Per Junction

0.01
0.0001 0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance ZthJC Characteristics

100
Rectangular gate pulse (1) PGM = 100 W, tp = 500 µs
Instantaneous Gate Voltage (V)

a)Recommended load line for (2) PGM = 50 W, tp = 1 ms

rated di/dt : 10V, 20 ohms, tr <= 1µs (3) PGM = 20 W, tp = 25 ms
b)Recommended load line for (4) PGM = 10 W, tp = 5 ms
rated di/dt : 10 V, 65 ohms, tr <= 1µs
10
(a)
(b)
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C

1
(4) (3) (2) (1)
VGD
Frequency Limited
IGD P100 Series By PG(AV)
0.1
0.001 0.01 0.1 1 10 100
Instantaneous Gate Current (A)

Fig. 9 - Gate Characteristics

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 P100 Series
Bulletin I27125 rev. A 04/99

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http://www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice.

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