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FEATURES
* High VRM SBD
* Low Forward Voltage Drop and Low Noise
* Surface mounted package
* Dual Diodes Cathode Common
20
Tj=25°C
Tj=150°C
10
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
INSTANTANEOUS FORWARD VOLTAGE (V)
0° 180°
θ
CONDUCTION ANGLE AVERAGE FORWARD POWER DISSIPATION
TCH20A20 (Total)
20
AVERAGE FORWARD POWER DISSIPATION (W)
RECT 180°
SINE WAVE
16
12
0
0 4 8 12 16 20 24
AVERAGE FORWARD CURRENT (A)
PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE
Tj= 150 °C
TCH20A20 (per Arm)
50
PEAK REVERSE CURRENT (mA)
20
10
5
0 40 80 120 160 200
PEAK REVERSE VOLTAGE (V)
TCH20A20 (Total)
7
AVERAGE REVERSE POWER DISSIPATION (W)
RECT 180°
6
4 SINE WAVE
0
0 40 80 120 160 200
REVERSE VOLTAGE (V)
0° 180°
θ
CONDUCTION ANGLE AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE
VRM=200V
TCH20A20 (Total)
24
RECT 180°
SINE WAVE
AVERAGE FORWARD CURRENT (A)
20
16
12
0
0 25 50 75 100 125 150
CASE TEMPERATURE (°C)
120
SURGE FORWARD CURRENT (A)
100
80
60
40
20 I FSM
0.02s
0
0.02 0.05 0.1 0.2 0.5 1 2
TIME (s)
JUNCTION CAPACITANCE VS. REVERSE VOLTAGE
Tj=25°C,Vm=20mVRMS,f=100kHz,Typical Value
TCH20A20 (per Arm)
500
JUNCTION CAPACITANCE (pF)
200
100
50
20
0.5 1 2 5 10 20 50 100 200 500
REVERSE VOLTAGE (V)