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SYSTEMS
Unveiling the Tiny World
of NEMS and Its
Revolutionary Potential
INTRODUCTION TO NEMS
Definition of NEMS:
History
• In 1960, MOSFET was fabricated for the first time with 100 nm gate
oxide thickness.
• In 1962, a nanolayer-base metal-semiconductor junction transistor
using gold thin films with 10 nm thickness was fabricated.
• In 1998, at UC Berkeley, FinFET devices were fabricated down to a
channel length of 17 nm.
• At IBM, in 2000, the researchers for the first time demonstrated the
very-large-scale integration (VLSI) device of NEMS.
INTRODUCTION TO NEMS CONTD...
1. Miniaturization
2. Enhanced Sensitivity and Performance
3. Diverse Applications
4. Potential for Innovation
5. Future of Technology
6. Efficiency and Energy Savings
7. Research and Development
Top-Down Fabrication:
2. Energy
NEMS devices hold promise in
energy-related applications,
contributing to more efficient energy
generation and harvesting:
▪ Nanogenerators
▪ Energy Harvesting Systems
Application Of NEMS
1 2 3
Fabrication Complexity: Materials and Cost and Accessibility:
NEMS fabrication demands Compatibility: Finding Specialized equipment and
precision and control at the suitable materials and resources for NEMS can be
atomic level, often posing ensuring compatibility costly, hindering
challenges in scalability and remains a challenge for widespread accessibility.
throughput. diverse NEMS applications.
Thank
You!