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IRF1010NSTRRPBF
IRF1010NSTRRPBF
IRF1010NSPbF
l Advanced Process Technology IRF1010NLPbF
l Ultra Low On-Resistance HEXFET® Power MOSFET
l Dynamic dv/dt Rating
D
l 175°C Operating Temperature VDSS = 55V
l Fast Switching
l Fully Avalanche Rated
RDS(on) = 11mΩ
l Lead-Free G
Description ID = 85A
Advanced HEXFET ® Power MOSFETs from
S
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The D 2 Pak TO-262
D2Pak is suitable for high current applications because of its IRF1010NSPbF IRF1010NLPbF
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF1010NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 85
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 60 A
IDM Pulsed Drain Current 290
PD @TC = 25°C Power Dissipation 180 W
Linear Derating Factor 1.2 W/°C
VGS Gate-to-Source Voltage ± 20 V
IAR Avalanche Current 43 A
EAR Repetitive Avalanche Energy 18 mJ
dv/dt Peak Diode Recovery dv/dt 3.6 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.85
RθJA Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40 °C/W
www.irf.com 1
03/11/04
IRF1010NS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 11 mΩ VGS = 10V, ID = 43A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 32 ––– ––– S VDS = 25V, ID = 43A
––– ––– 25 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 120 ID = 43A
Qgs Gate-to-Source Charge ––– ––– 19 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 41 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 13 ––– VDD = 28V
tr Rise Time ––– 76 ––– ID = 43A
ns
td(off) Turn-Off Delay Time ––– 39 ––– RG = 3.6Ω
tf Fall Time ––– 48 ––– VGS = 10V, See Fig. 10
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH
from package G
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 43A, VGS = 0V
trr Reverse Recovery Time ––– 69 100 ns TJ = 25°C, IF = 43A
Qrr Reverse Recovery Charge ––– 220 230 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by This is a calculated value limited to TJ = 175°C .
max. junction temperature. ( See fig. 11 ) Calculated continuous current based on maximum allowable
Starting TJ = 25°C, L = 270µH
junction temperature. Package limitation current is 75A.
RG = 25Ω, IAS = 43A, VGS=10V (See Figure 12)
ISD ≤ 43A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS, Uses IRF1010N data and test conditions.
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
TJ ≤ 175°C
For recommended footprint and soldering techniques refer to
Pulse width ≤ 400µs; duty cycle ≤ 2%.
application note #AN-994.
This is a typical value at device destruction and
represents operation outside rated limits.
2 www.irf.com
IRF1010NS/LPbF
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
100 100
4.5V
4.5V
10 10
100 2.5
ID = 85A
RDS(on) , Drain-to-Source On Resistance
TJ = 25 ° C
I D , Drain-to-Source Current (A)
2.0
TJ = 175 ° C
(Normalized)
1.5
10
1.0
0.5
V DS = 25V
20µs PULSE WIDTH VGS = 10V
1 0.0
4 6 8 10 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C)
20
6000 ID = 43A
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED VDS = 44V
4000 Ciss
12
3000
Coss
8
2000
1000 Crss 4
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD , Reverse Drain Current (A)
100
TJ = 175 ° C
100
10
100µsec
10 1msec
1 TJ = 25 ° C
Tc = 25°C
Tj = 175°C 10msec
V GS = 0 V
0.1 Single Pulse
0.0 0.6 1.2 1.8 2.4 1
VSD ,Source-to-Drain Voltage (V) 1 10 100 1000
VDS , Drain-toSource Voltage (V)
100
RD
LIMITED BY PACKAGE VDS
VGS
80 D.U.T.
RG
ID , Drain Current (A)
+
-VDD
60
V GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms
D = 0.50
Thermal Response (Z thJC )
0.20
0.10
0.1
0.05 PDM
SINGLE PULSE
0.02 (THERMAL RESPONSE) t1
0.01
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
www.irf.com 5
IRF1010NS/LPbF
500
ID
RG D.U.T + 300
V
- DD
IAS A
VGS
20V
tp 0.01Ω
200
50KΩ
12V .2µF
QG .3µF
VGS +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA
IG ID
Charge Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
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IRF1010NS/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
- +
-
RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D" VDD
-
• D.U.T. - Device Under Test
VGS
[VGS=10V ] ***
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5% [ISD ]
OR
P AR T N U M B E R
IN T E R N AT IO N AL
R E C T IF IE R F 530S
L OGO
D AT E CO D E
P = D E S IG N AT E S L E AD -F R E E
AS S E M B L Y P R O D U C T (O P T IO N AL )
L OT COD E Y E AR 0 = 2 0 0 0
W E E K 02
A = AS S E M B L Y S IT E CO D E
8 www.irf.com
IRF1010NS/LPbF
TO-262 Package Outline
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
OR
PART NUMBER
INT ERNAT IONAL
RECT IFIER
LOGO
DAT E CODE
P = DES IGNAT ES LEAD-FREE
AS S EMBLY PRODUCT (OPTIONAL)
LOT CODE YEAR 7 = 1997
WEEK 19
A = AS S EMBLY S ITE CODE
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IRF1010NS/LPbF
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161)
1.50 (.059) 0.368 (.0145)
3.90 (.153)
0.342 (.0135)
FEED DIRECTION
30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 03/04
10 www.irf.com
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/