Uni- and Bipolar Hall IC Switches for TLE 4905 G; TLE 4935 G

Magnetic Field Applications TLE 4935-2 G; TLE 4945-2 G

Bipolar IC

Features
• Temperature compensated magnetic performance
• Digital output signal
• For unipolar and alternating magnetic fields
• Large temperature range
• Protection against reversed polarity
• Output protection against electrical disturbances
SOT-89

Type Ordering Code Package

▼ TLE 4905 G Q62705-K402 SOT-89
▼ TLE 4935 G Q62705-K404 SOT-89
▼ TLE 4935-2 G Q62705-K405 SOT-89
▼ TLE 4945-2 G Q62705-K403 SOT-89
▼ New type

TLE 4905/35/35-2/45-2 (Unipolar/Bipolar Magnetic Field Switches) have been designed

specifically for automotive and industrial applications. Reverse polarity protection is
included on-chip as is output protection against negative voltage transients.
Typical applications are position/proximity indicators, brushless DC motor commutation,
rotational indexing etc.

Semiconductor Group 1 1998-04-29

 TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G

Pin Configuration
(top view)

Center of
2.25 ±0.2 sensitive area

1±0.2

1 2 3
AEP02150

Figure 1

Pin Definitions and Funtions

Pin No. Symbol Function

1 VS Supply voltage
2 GND Ground
3 Q Output

Semiconductor Group 2 1998-04-29

 TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G

Circuit Description
The circuit includes Hall generator, amplifier and Schmitt-Trigger on one chip. The
internal reference provides the supply voltage for the components. A magnetic field
perpendicular to the chip surface induces a voltage at the hall probe. This voltage is
amplified and switches a Schmitt-trigger with open-collector output. A protection diode
against reverse power supply is integrated.
The output is protected against electrical disturbances.

Threshold
Generator

1 3
VS Q
Hall-
Generator

VS
VRef

Amplifier Schmitt-
Trigger
Output
2 Stage
GND AEB01243

Figure 2 Block Diagram

Semiconductor Group 3 1998-04-29

 TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G

Functional Description Unipolar Type TLE 4905 (figure 3 and 4)

When a positive magnetic field is applied in the indicated direction (figure 3) and the
turn-on magnetic induction BOP is exceeded, the output of the Hall-effect IC will conduct
(Operate Point). When the magnetic field is reduced to a value smaller than the release
point, the output of the IC turns off (Release Point; figure 4).

Branded Side
Ι

VQ
N

+ -
VS AES01231

Figure 3 Sensor/Magnetic-Field Configuration

BOP

BRP Induction

0
t
VQ

VQH

Output Voltage

VQL

t
AED01420

Figure 4 Switching Characteristics Unipolar Type

Semiconductor Group 4 1998-04-29

 TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G

Functional Description Bipolar Type TLE 4935/35-2/45-2 (figure 5 and 6)

When a positive magnetic field is applied in the indicated direction (figure 5) and the
turn-on magnetic induction BOP is exceeded, the output of the Hall-effect IC will conduct
(Operate Point). The output state does not change unless a reverse magnetic field
exceeding the turn-off magnetic induction |BRP| is exceeded. In this case the output will
turn off (Release Point; figure 6).

Branded Side
Ι

VQ
N

+ -
VS AES01231

Figure 5 Sensor/Magnetic-Field Configuration

BOP
0 Induction
t
BRP

VQ

VQH

Output Voltage

VQL

t
AED01421

Figure 6 Switching Characteristics Bipolar Type

Semiconductor Group 5 1998-04-29

 TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G

Absolute Maximum Ratings

Tj = – 40 to 125 °C
Parameter Symbol Limit Values Unit Remarks
min. max.
Supply voltage VS – 40 32 V –
Supply voltage VS – 40 V t < 400 ms; ν = 0.1
Output voltage VQ – 32 V –
Output current IQ – 100 mA –
Output reverse current – IQ – 100 mA –
Junction temperature Tj – 40 125 °C –
Storage temperature Tstg – 50 150 °C –
Thermal resistance Rth JA 100 K/W –

Note: Stresses above those listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.

Operating Range
Parameter Symbol Limit Values Unit Remarks
min. max.
Supply voltage VS 4.0 18 V –
Junction temperature Tj – 40 125 °C –

Note: In the operating range the functions given in the circuit description are fulfilled.

Semiconductor Group 6 1998-04-29

 TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G

AC/DC Characteristics
4.0 V ≤ VS ≤ 18 V; – 40 °C ≤ Tj ≤ 125 °C
Parameter Symbol Limit Values Unit Test Condition Test
min. typ. max. Circuit

Supply current ISHigh – 2.5 7 mA B < BRP 1

ISLow – 3.5 8 mA B > BOP 1
IQ = 40 mA
Output saturation VQSat – 0.25 0.5 V IQ = 40 mA 1
voltage
Output leakage IQL – – 10 µA VQ = 18 V 1
current
Rise/fall time tr / tf – – 1 µs RL = 1.2 kΩ 1
CL ≤ 33 pF

Note: The listed characteristics are ensured over the operating range of the integrated
circuit. Typical characteristics specify mean values expected over the production
spread. If not otherwise specified, typical characteristics apply at Tj = 25 °C and
the given supply voltage.
Note: Moderate changes may occur during the development process or customer
discussion.

Semiconductor Group 7 1998-04-29

 TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G

Magnetic Characteristics
4.0 V ≤ VS ≤ 18 V
Parameter Symbol Limit Values Unit
TLE 4905 TLE 4935 TLE 4935-2 TLE 4945-2
unipolar bipolar latch bipolar latch bipolar
switch
min. max. min. max. min. max. min. max.

Junction Temperature Tj = – 40 °C
Turn-ON
induction BOP 7.5 19 10 20 15 27 –3 6 mT
Turn-OFF
induction BRP 5.5 17 – 20 – 10 – 27 – 15 –6 3 mT
Hysteresis
(BOP-BRP) ∆BHY 2 6.5 20 40 30 54 1 5 mT

Junction Temperature Tj = 25 °C
Turn-ON
induction BOP 7 18 10 20 14 26 –3 6 mT
Turn-OFF
induction BRP 5 16 – 20 – 10 – 26 – 14 –6 3 mT
Hysteresis
(BOP-BRP) ∆BHY 2 6 20 40 28 52 1 5 mT

Junction Temperature Tj = 85 °C
Turn-ON
induction BOP 6.5 17.5 10 20 13 26 –3 6 mT
Turn-OFF
induction BRP 4.5 15 – 20 – 10 – 26 – 13 –6 3 mT
Hysteresis
(BOP-BRP) ∆BHY 2 5.5 20 40 26 52 1 5 mT

Junction Temperature Tj = 125 °C

Turn-ON
induction BOP 6 17 10 20 12 25 –3 6 mT
Turn-OFF
induction BRP 4 14 – 20 – 10 – 25 – 12 –6 3 mT
Hysteresis
(BOP-BRP) ∆BHY 2 5 20 40 24 50 1 5 mT

Note: The listed characteristics are ensured over the operating range of the integrated circuit.
Typical characteristics specify mean values expected over the production spread. If not
otherwise specified, typical characteristics apply at Tj = 25 °C and the given supply voltage.

Semiconductor Group 8 1998-04-29

 TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G

ΙS 1
VS VS
+
4.7 nF
- 2 TLE
RL GND
4905/35/35-2/45-2
CL
3
Q
ΙQ
AES01244

Unipolar Type TLE 4905 Bipolar Type TLE 4935

VQ VQ

VQH VQH

VQL VQL

0 B RP B OP B B RP 0 B OP B
B HY B HY AED01422

VQ

VQH

0.9 VQH

0.1VQH

t
tr tf AED01246

Figure 7 Test Circuit 1

Semiconductor Group 9 1998-04-29

 TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G

Mainframe Line Sensor

1
VS VS

4.7 nF
2 TLE
1.2 k Ω GND
4905/35/35-2/45-2
4.7 nF
3
Signal Q

AES01247

Figure 8 Application Circuit

Semiconductor Group 10 1998-04-29

 TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G

If not otherwise specified, all curves reflect typical values at Tj = 25 °C and VS = 12 V.

Quiescent Current Difference Saturation Voltage versus
versus Temperature Output Current
AED01459 AED01461
1.0 1.2
∆Ι S VQ V
mA
∆ Ι S = Ι SLow - Ι SHigh 1.0 4.0 V <_ VS <_ 18 V
0.75 Ι Q = 40 mA
0.8

0.5 0.6 T j = 125 ˚C

0.4
0.25

0.2 T j = -40 ˚C

0 0
-40 0 50 100 150 ˚C 200 0 20 40 60 mA 100
Tj ΙQ

Quiescent Current versus TLE 4905 Operate-and Release-Point

Junction Temperature versus Junction Temperature
AED01249 AED01424
8 25
ΙS
4.0 V <_ VS <_ 18 V
mA B mT
VQ = High 20
6
B OPmax
15
B RPmax
4
VS = 18 V B OPtyp
10
B RPtyp
VS = 4.0 V
2 B OPmin
5
B RPmin

0 0
-50 0 50 100 C 200 -40 0 50 100 ˚C 200
Tj Tj

Semiconductor Group 11 1998-04-29

 TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G

TLE 4935 Operate-and Release-Point TLE 4935-2 Operate-and Release-Point

versus Junction Temperature versus Junction Temperature
AED01423 AED01640
30 30
4.0 V <_ VS <_ 18 V
B 4.0 V <_ VS <_ 18 V mT B OPmax
mT B
B OPmax 20
20 B OPtyp

B OPtyp B OPmin
10
B OPmin
10

0
-10
B RPmax
B RPmax
-10 B RPtyp
-20
B RPtyp B RPmin
B RPmin
-20 -30
-40 0 50 100 ˚C 200 -40 0 50 100 ˚C 200
Tj Tj

TLE 4905 Hysteresis versus Junction TLE 4945-2 Operate-and Release-Point

Temperature versus Junction Temperature
AED01426 AED02353
8 18
B 4.0 V <_ VS <_ 18 V 4.0 V <_ VS <_ 18 V
mT
mT B
12

6
B OPmax
6
B HYmax
B RPmax
B OPtyp
4 0
B RPtyp
B OPmin
B HYtyp
-6
B RPmin
2
B HYmin
-12

0 -18
-40 0 50 100 ˚C 200 -40 0 50 100 ˚C 200
Tj Tj

Semiconductor Group 12 1998-04-29

 TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G

Package Outline

SOT-89 (SMD)
(Plastic Small Outline Transistor Package)

4.5
45˚ +0.2 1.5
0.25 acc. to 0.2 max 1) 1.6
DIN 6784

10˚ max

-0.15
2.75 +0.1
2.6 max
4.25 max
1

1.0 ±0.2
0.65 max
1.5 0.25 min
3

GPS05558
1)
Ejector pin marking possible

Package Information

d: Distance chip to upper side of IC

SOT-89: 1.05 mm
d

AEA02487

Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”.
SMD = Surface Mounted Device Dimensions in mm

Semiconductor Group 13 1998-04-29