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ELECTRONICS,
VOL. QE-12, NO. 2, FEBRUARY 1976
Abstract-We
derive an equationfor TM-mode coupling coeffi-
cientsin guided-wave distributedfeedback (DFB) lasers. Resultsfor
GaAs:GaAIAsdouble-heterostructurelasers with rectangular, triangular,
and sawtooth-shaped teeth, various Bragg diffraction orders, and trans-
verse mode numbers are presented for TM modes and compared with
I" x = t x "3
modes which propagate with approximatelyPo, where Upon substituting (5) into (4) and noting that R and S vary
slowly compared t o eiiPoz, so that all terms multiplying eiPoZ
mn can be collected, we obtain
po &-
A
so that DFB can occur for mth-order Bragg scattering. In (2),
A is the grating period. Thus we seek solutions of (1) in the
form
- 0; SjAm ( X ) X j - iposj
E) } = o .
-
A&)Xj (7)
In deriving (7), twotermscontaining ups;cancelandthe
Manuscript received August 18, 1975; revised September 18, 1975. relation
The authors are with the Xerox Palo Alto Research Center, Palo Alto,
e i 2 n m z / h = eiPoz
CA 94304. e -ip,z (8)
COEFFICIENTS
STREIFER
COUPLING
et al.: TM-MODE 75
has been utilized. If Xi is then taken to be a solution of It is important to examine (9) satisfied by X . There A o ( x )
appearsinaddition to vu. For corrugation
a ofheight
g, A (x) # 0 only for 0 < x <g. If the corrugation is rectan-
gular, A o ( x ) is constant. Then ( 9 ) describes TM modes in the
+k;Xi=O (9) four-layerstructureshown in Fig. 2, where theindex for
0 < x < g is just the value of v = l/n2 averaged over the teeth.
where pi is the propagation constant of the j t h TM mode, (7) Thus the unperturbed geometry for TM modes differs slightly
is significantly simplifiedto read from that used both for TE and TM modes in [ 11 and [3],
respectively,andforourchecks on TE-modeDFBcoupling
coefficients [4]. In those cases the average of n2 was employed
in thecorrugationregion. One can show thatthetwoun-
perturbed mode formulations do not differ to first order, and
fortheDFBcalculationdescribedpreviously,fewerterms
need be neglected using the expansion of v and thus the geom-
etry of Fig. 2. If instead of v = 1 / =~l/n2 we expand €(x, z ) =
n2(x,z) as
Equation (2) was invoked in obtainirig (10) from (7). Finally, 00
:1 Am(x) x i ( x ) x k ( x > d xf o
(a)
the boundary are equal, i.e., the areas labeled A and B in Fig. 3
are equal. To illustrate the accuracy of this choice for rectan-
gular teeth, we plot in Fig. 4 values of IK I versus tooth height
computedfrom(13)and (14) forfour-layerunperturbed
structures and for the three-layer structure as shown in Fig. 3.
In all cases t = 0.8 pm. Two curvesaregiven for the three- "1
layer structure; one uses the analog of (13) with an expansion
Fig. 3. Illustrating the functions defining tooth shape.
of Y = l / n 2 , the other is analogous to (14) with e = n2 ex-
panded. The agreement is quite good; however, we find that
for large index differences at the corrugation boundary, such
as occurs at anair-GaAs interface, the various formulations for
h = 8500A
TM-mode couplingcoefficients do not agreewell. Then, of t = 0.8 u m
course, 6e is large compared to E in the grating region. In our
opinion,furtherwork is required to determinewhichfour- P
m=1
- 4 LAYERS. v EXPANDED
4 LAYERS; e EXPANDED
i
layergeometryis the more suitable for calculating K in the 3 LAYERS, Y EXPANDED
2 3 LAYERS, c EXPANDED
case of TM modes. In the remainder of this paper the unper- .'""
turbedmode X is computedforthethree-layergeometry
previously described, and the expansion of v is employed.
Consider the corrugation shown in Fig. 3. Clearly,
I O<x<g2
1 1 I 1
0 500 1000 1500 2000
CORRUGATlON HEIGHT - g l 8 )
from (16) together with expressions for X and X ' (see the
Appendix) in (13) and evaluating the integrals either numeri-
where x is measured from the new boundary and u(z) is the cally or analytically. Since the form of 3C is similar to that of 8
unit step function. Upon integration,Am( x ) is given by for TE modes, the analytic results given in our earlier paper
[4] can be modified to evaluate (13).
111. RESULTS
In Fig. 5(a)-(c) we plot TE and TM coupling coefficients for
- e-i2 zrn w ( x ) / h>
a double-heterostructure GaAslaser with rectangular, trian-
gular,andsawtooth-shapedcorrugationsfor various Bragg
orders. The laser parameters are listed and t' is thecenter
layer thickness measured to the center of thecorrugations.
Fig. 5(a)-(c) are for the three propagating TE and TM modes.
- e-i2nmw, (x)/A > The particular Bragg orders and tooth shapes were chosen to
illustrate a variety of cases. Generally, K for TE modes is found
- g , < x <0 to be somewhat greater than that forTM modes. However, for
large triangular corrugations theTM modes have greater values.
x <-g1. (16)
According to [ 1] and [ 3 ], results obtainedusing unperturbed
The coupling coefficient K isfoundbysubstituting Am(x) modes computed from four-layer geometries are quite accurate
STREIFER et al.: TM-MODE COUPLING COEFFICIENTS 77
RECTANGULAR
m = 1, w/A = 0.5
1 I I I I
8- n1 = n3 = 3.3
- n2= 3.6
h = 8500A
4 - t’ = 0.8 vrn
-TEZ
--- TM2
2-
2
500 1000 1500 2000
CORRUGATION HEIGHT-g (A) HEIGHT-g
CORRUGATION (A)
(b) (C)
Fig. 5. Coupling coefficients versus tooth height for a double-hetero-
structurelaser. (a) TEoandTMo modes.(b) TE1and TM1 modes.
(e) TE2 and TM2 modes.
Correspondence
On the Effect of the Addition of SF6 to a N2 Electrical In this correspondence wewill be concerned primarilywith
Discharge Laser experiments of the first class. It has been suggested that the
resulting laser behavior with the addition of SF6 is due to a
0. JUDD modification of the electron distribution function in the elec-
trical discharge such as to favor excitation of the C 371u and
Abstruct-The electron distribution function has been calculated for B 3ng states [ 21. A theoretical simulation has been performed
simulated conditions of SF6-N’ gas mixtures under conditions typical for the resulting electron distribution function in aN2-SF6
of a N2 electrical discharge laser. The results indicate that the electron discharge for the conditions of the experiments. The results
distributionfunction,transportquantities, andelectronicexcitation indicate that the electron distribution function, electron ex-
rates change only a few percent in the presence of SF6 provided E/N is citation rates, and discharge transport properties only change
unchanged. The enhancement in laser power output with the addition a few percent with the addition of SF6 provided E/N is held
of SF6 is attributed to anincreased operating valueof E/N in the constant. As an alternateexplanationforthe observed N2
electrical discharge. laser behavior, it appears that the enhanced laser output can
be attributed to increases of E/N with the additionof SF6.
The electron distribution functionwas calculated numerically
Recently, several experimental investigations have been re- from a self-consistentsolution of the Boltzmann transport equa-
ported concerning theeffects of theaddition of SF6 to an tion using well-known techniques which are summarized [ 5 l .
electrically excited N2 discharge laser operating on the second The N2 electronic excitation cross sections for theA 3 Z , B 3 ~ ,
positive C 3 nu + B ng electronic transition. The experiments C 3rr, and W 3A were based on values revised byCartwright
may be classified into two types. In the first type, the dis- et al. [ 6 ] . The electron vibrational cross sections for N2 are
charge geometry and external circuitry are such as t o allow a those obtained by Schulz [ 71 . No published data on the elec-
deposition of energy into the gas on a time scale of less than tronicand vibrational excitation cross sections forelectron
50 ns [ 1 ] -[ 31. With the addition of a small amount of SF6 to impact on SF6 were found in the literature. In order to de-
<
the N2 (SF6/N2 0.2), it is observed that the optical output termine the qualitative effectsof SF6 on the distribution func-
intensity increases by 30-100 percent and that in some cases tion, it was necessary to simulate some of the SF6 inelastic
the optical pulsewidth (10 ns) increases by a factor of 2 [ 31. cross sections. Previous calculations of this type indicate that
The transition observed is the u’ = 0 + u” = 0 transition at if the inelastic electron loss processes are distributed more or
337.1 nm. Typical discharge conditions are 20-30 torr of N2 less uniformly inenergyspace, the form of the distribution
and a ratio of electric field E to total gas density N of E/N function, and in particular the excitation rates, are rather in-
2 X V/cm2. In the second class of experiments, the sensitive to the exact character of the cross sections [ 5 ] . This
energy is deposited into a discharge of 40 torr of N2 on a time cross-section behavior is assumed to be representative of SF6.
scale of 500 ns. As the ratio SF6/N2 was increased to 1.0, it As a first approximation we simulate the electronic and vibra-
was observed that the laser emission increased in intensity and tional cross sectionsin SF6 by those that have beenexperi-
a significant broadening of the opticalpulsewidth occurred [ 41 . mentally determined for C 0 2 . A much more important
To date, optical pulsewidths in excess of 70 ns have been re- property of SF6 that mustbe takenintoaccount more ac-
ported. In addition, both the v’ = 0 u’’ = 0 and v’ = o-+~‘‘
-+ =1 curately is electronattachment which tends t o depletethe
transitions at 337.1 and 357.6 nm, respectively, were observed. low-energy electron component of the distribution function.
The cross sections for electron attachment and ionization in
ManuscriptreceivedAugust 1 , 1975. This work was supported by SF6 were taken from Asundi and Craggs [ 81.
the Energy Research and Development Administration. The calculated results for the electron distribution function
The author is with the Los Alamos Scientific Laboratory, University f ( u ) for two values of E/N are shown in Fig. 1. The solid lines
of California, Los Alamos, NM 87544. are the electron distributions in pure N2 and the dotted lines