DATE. SPECIFICATION Device tans ___;_ Power MOSFET ype Nano. : 25K2894-01R__. Spec. Wo. : NAME [APPROVED JoRawn) ECKE! DEN. Full Electric Co.Ltd. Matsumoto Factory Fuji Electric Co.,Ltd. 1/13 04-04-071.Scope ‘This specifies Fuji Power MOSFET 28K2894-01R 2.Construction _ N-Channel enhancement mode power MOSFET 3.Applications ——_for Switching 4.0utview JO-3PF Outview See to 5/13 page 5,Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Symbol | Characteristics Drain-Source Voltage Vos 30 [Continuous Drain Current £100 Pulsed Drain Current lor +400 |Gate-Source Vottage Vos £16 [Maximum Avalanche Energy _ [Eav 2596.7 [Maximum Power Dissipation [Po 150 JOperating and Storage [Ten 150 Fremperature range To 55 to +150 "7 L=0 338M Veo=12V 6.Electrical Characteristics at Tc=25C (unless otherwise specified) Static Ratings Description _| Symbol Conditions min. | typ. Drain-Source b=1ma\ weeee ce cceveet ty eee ce Breakdown Voltage! Vos=0V 30 |Gate Threshold ip=tma Voltage| Vos=Vs [Zero Gate Voltage Vos=30v [Tane25'C Drain Current Vos-0V [Ten=125°C Gate-Source Vos=+16V Leakage Current| Vos=0V Drain-Source ves-4v ID=50A On-State Resistance| Vas=10V Fuji Electric Co.,Ltd.Dynamic Ratings Description _| Symbol Conditions min. | typ. | max | unit Forward lb=508 ransconductance|"" __Vos=25v 45 | 90 s Input Capacitance |Cies _|Vos=25V 6600 | 9900 lOutput Capacitance |Coss —_|Vos=0V 3300 | 4950 Reverse Transfer], etm pF Capacitance 1400 | 2100 fta(on) — [Vec=15V. 20 30 [Tum-On Time tr IVes=10V 150 | 230 Its(otf) |lb=1008 amo | 710 | ns [Turn-off Time te ros=100 370 | 560 Reverse Diode 2) [Description ‘Symbol Conditions min. | typ. | max | Unit i Yavalanche Capability 7 L=100.H Teh=25°C 2 [See Fig.1 and Fig.2 | 100 a] -— j [Diode Forward 1008 2 On-Voltage| ie Ves=0V 1.0 15 Vv € Reverse Recovery e=50A E Tie Ves=0V 95 ns Reverse Recovery |, |didt=t00A/us Charge| [Tames'c 0.22 uc 7-Thermal Resistance Description ‘Symbol min. | typ. | max | unit [Channel to Case _[Rth(ch-c) 10 [cw [Channel to Ambient [Rth(ch-a) 30.0 [cw Fuji Electric Co.,Ltd. 3/13 W54-004-03,Fig.1 Test circuit L DUT Vec=1/10 X Vos = soy, L=t00uH Soa Starting Toh=25°C bd 4 shot pulse Fig.2 Operating waveforms Ves ° ——BVoss bw Vos o tb Fuji Electric Co.,Ltd. El 473 | ‘WO4-008-0315.520.3 Trademark Type name SEES] 5.4520.2 Fuji Electric Co.,Ltd. 9.3403 12.2403 Pre-Solder 06% 5.45#0.2 3.5202 CONNECTION Note 1. Guaranteed mark of avelanche ruggedness. (@) GATE @® DRAIN ® source DIMENSIONS ARE IN MILLIMETERS.Power Dissipation PD=f (Tc) Te [C] Safe operating area ID=f (VDS) :D=0. 01, Te=25C 10) vos [Vv] Fuji Electric Co.,Ltd. | 108-008-038Typical output characteristics ID=f (VDS) 180s pulse test, To=25'C RIV ay) gy vos [v] Typical transfer characteristics ID=f(V6S):80 ws pulse test, VDS=25V, Tch=25°C ves [Vv] Fuji Electric Co.,Ltd. ATypical forward transconductance gfs=f (ID) 1804s pulse test, VDS=25V, Tch=25°C 10 = 10°| & j 10'|- i { a 4 i 10° 10° 10° 1D CA} Typical Drain-Source on-State Resistance ian RDS (on) =f (1D):80ns pulse test, Toh=25°C vos: : 2.0V 2.5V 40 i | = 30 g fr 2 gov z Lf 2 20 | — ‘0 10 ° MS 15y| 0 so ‘09 150 200 Dial Fuji Electric Co.,Ltd. 8/13Drain-source on-state resistance RDS (on) =f (Teh): |D=50A, VGS=10V 10 2 = g max. 5 ° 50 0 50 100 150 Toh (] Gate Threshold Voltage vs. Teh VGS(th) =f (Tch):VDS=VGS, ID=1mA 30 25 at 3 20 He Bis : 05 00 50 25 0 25 50 75 100 125 150 Teh [0] Fuji Electric Co.,Ltd. |Fuji Electric Co.,Ltd. Typical Gate Charge Characteristics VGS=t (Ag) :1D=100A, Teh=25°C 25 28 He au Ee 7 20 15, | — < Ez \ 8 10 10 5 \ 5 ° ° ° 100 200 300 400 500 3 Og [nc] [ Typical capaci tances e C=f (VDS) : VGS=0V, f=1MHz | 100n i i t g i 100 crss tn SE 100p - 107 10" 10° 10" 10° vos [Vv] 10/13, HO4-008-03Typical Forward Characteristics of Reverse Diode IF=f (VSD) :80 zs pulse test, Tch=25°C 220 + 200 Fp 180 160 140 120 IF CA] 100 80 60 40 20 peeled 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 vs [v] Typical Switching Characteristics vs. 1D t=f (1D) :Vco=15V, V6S=10V, RG=10 0 10° tdett) Fuji Electric Co.,Ltd.Maximum Avalanche Current vs. starting Tch I(AV)=f (starting Toh) 120 100 80 60 1 (av) fA] 40 20 + o 50 100 150, Starting Teh ('C] Maximum Avalanche energy vs. starting Tch Eas-f (starting Tch):Vcc=12V, |yS100A 3000 2500 2000 1500 . Eas [mJ] 1000 500 0 50 100 150 Starting Teh ('C] Fuji Electric Co.,Ltd. 12/13 1H04-004-03Transient thermal impedande Zthoh=f (t) parameter: D=t/T Fuji Electric Co.,Ltd. i B/B | HO4- 004-08