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The Parametric
Measurement
Notas de Aplicação

Preface
“An expert is a man who has made all the mistakes, which can be made,
in a very narrow field” — Niels Bohr
It has been seven years since we published the first edition of this
handbook, and in the interim many things have changed. Fully recovered
from the shock (in 1999) of transitioning from Hewlett-Packard to Agilent
Technologies, in 2014 we once again changed names as the electronic
test and measurement portion of Agilent became Keysight Technologies
(“unlocking measurement insights”). Despite our two name changes,
Keysight remains true to its roots as HP’s original business. We continue
to work at supplying our customers with the best electronic test
solutions available.
If you have an earlier version of this handbook, then you probably want
to know: What is new? The main thing you will notice about this edition
versus earlier ones is the addition of an entirely new chapter (chapter 9)
devoted to the power device test. This was necessary as Keysight has
come out with many new solutions to test power devices since the
handbook was first published. Also, power device testing is a complex
enough task that warrants having a chapter devoted exclusively to it.
The other changes have been interwoven into existing chapters, and
they include updated information on enhancements to existing products
as well as information on some of our newer products.
Many people helped with the content and review of this updated
handbook, but in particular, I would like to acknowledge the
contributions of Yasushi Okawa for his many excellent presentations and
training materials on power device tests. Without those chapter 9 would
have been much more difficult to write. Also, thanks go to Helen Amato,
Biow-Huei Sim, and Gwen Soo for their extensive work to update the
handbook layout and images. Overall I think that there is enough new
content in this edition to enable engineers and researchers to make
accurate parametric measurements on low and high power devices both
now and for many years into the future.
Table of Contents:

Chapter 1 – Keysight Technologies’ Parametric Measurement

Solutions
What is a parametric test
Why is parametric testing performed?
Where is parametric testing done?
Parametric Instrument history
Chapter 2 – Parametric Measurement Basics
Measurement terminology
Shielding and guarding
Kelvin (4-wire) measurements
Noise in electrical measurements
Chapter 3 – Source/Monitor Unit (SMU) Fundamentals
SMU overview
Understanding the ground unit
High current SMU connections (B1505A and B1506A)
Medium Current SMU Connections (B1500A)
Measurement ranging
Eliminating measurement noise and signal transients
Low current measurement
Spot and sweep measurements
Combining SMUs in series and parallel
Safety issues
Additional Modules and Accessories for Power Device Test
Chapter 4 – On-Wafer Parametric Measurement
Introduction
Wafer prober measurement concerns
Switching matrices
Positioner-based switching solutions
High voltage and high current wafer probing
Chapter 5 – Time-Dependent and High-Speed Measurements
Introduction
Parallel measurement with SMUs
Time sampling with SMUs
Maintaining a constant sweep step
High-speed test structure design
Fast IV and fast pulsed IV measurements
Chapter 6 – Making Accurate Resistance Measurements
Resistance measurement basics
 Floating vs. grounded resistance measurements
Resistivity
Van der Pauw test structures
Accounting for Joule self-heating effects
Eliminating the effects of electro-motive force (EMF)
Chapter 7 – Diode and Transistor Measurement
Introduction
PN junctions and diodes
MOS transistor measurement
Bipolar transistor measurement
Nanotech devices
Chapter 8 – Capacitance Measurement Fundamentals
Introduction
MOSFET capacitance measurement
Quasi-static capacitance measurement
Low frequency (< 5 MHz) capacitance measurement
High frequency (>5 MHz) capacitance measurement
Making capacitance measurements through a switching matrix
Chapter 9 – Power Device Characterization
Introduction
Calculating Power Loss in Power Semiconductor Devices
High DC bias capacitance measurements
Gate charge measurement
On-wafer gate charge measurement
Appendix A – Keysight Technologies’ Parametric Measurement
Solutions

What is a parametric test?

The question as to what constitutes parametric testing is an interesting
one and is possibly open to some debate. Nevertheless, in general,
parametric testing involves the electrical testing and characterization of
four main types of semiconductor devices: resistors, diodes, transistors,
and capacitors. This is not to say that parametric tests never involve the
testing of other device types; however, the vast majority of parametric
test structures can be classified into one of these categories or
considered to be a combination of these categories.
The vast majority of parametric testing involves either current versus
voltage (IV) or capacitance versus voltage (CV) measurements.
To many people, parametric testing means “DC” testing, but this is not
an accurate description. Of course, it can take source/monitor units
(SMUs) anywhere from milliseconds to seconds to make a measurement,
which is certainly “slow” by the standards of functional testers (which
typically perform measurements in the nanosecond or picosecond
range). However, in recent years, the need to perform extremely fast
parametric measurements (1 µs spot measurements with data sampling
rates in the nanosecond range) has greatly increased. This has required
the creation of new measurement module types (such as the waveform
generator/fast measurement unit or WGFMU) to meet this need.
Extremely fast IV and pulsed IV measurements will continue to take on
increased importance in the future, as transistor lithographies continue
to shrink and more exotic materials are incorporated into semiconductor
processes.

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