aint Pressure solution in grains affected by a rmauimum stress and surrounded by a pore fluid secu The faint line within the grain isa hematite stain along egal cast surface. After Hibbard (1995) Figure 2 illustrates lattice deformation via a process «(ssaney migration 0 aecommodate stress by shortening ing) Figure 3 shows accommodation of shear by ‘ige-dslocation migration, Defect migration in either case is wallographically controlled and can happen only along. ‘at slip directions in certain slip planes; the comb Scaled sip system, Both processes in the to fig- ‘allow deformation to occur by displacing only a tiny Pool crystal at aime, thus permitting strain 10 0c “uth uch less deviatoric stress i if the whole lattice had “eld along a fracture at once, Defects, in other words, “sles tucks, Point defect migration’ also_ enhances “Yet through a lattice because the motion 0 one direction is ¢ ilent to migration of matter in the ‘ote det sg Dislocation glide involves the nga ip system (as in Figure 3). Mest past Astlely deformable erystals (quartz, carbon. ZEA potential slip aystems with different rie i thich enhances their capacity wo aceon * ede long different active slip 9ys [fat ifeliy herd pe TO > } ee oe Sc ee FIGURE 2 (a) Migration of a vacancy in a familiar ‘game. b) Plastic horizontal shortening of a erystal by vacancy 'migration. From Passchier and Trouw (2005), Copyright © with permission from Springer-Verlag migrating dislocations can interfere, form angles,” inhibiting further greater deyree of differential stre the tangle and per required for deformation, 1 is elfectively st 1g dislocation ‘on all slip systems. A, 8 then required to over: it slip. Because more stress is with numerous tangles jet Thiy iy called strain hardening which vacancies migrate to the dislo {oelimb” over As disloca nigrate, portions of a erys- {at's latice become reoriented, An easily observed result of this is undutose ext sure 4), because the the polarizing ud allow them @ scanned with OKEN Scanner ‘Obstructions can be overcome by dislocation creep, in” 501