RESEARCH ARTICLE | DECEMBER 27 2021

Over 1.8 GW/cm2 beveled-mesa NiO/β-Ga 2O3 heterojunction

diode with 800 V/10 A nanosecond switching capability 
Special Collection: Wide- and Ultrawide-Bandgap Electronic Semiconductor Devices

F. Zhou ; H. H. Gong; Z. P. Wang ; W. Z. Xu; X. X. Yu ; Y. Yang ; F.-F. Ren ; S. L. Gu; R. Zhang;

Y. D. Zheng; H. Lu  ; J. D. Ye 

Appl. Phys. Lett. 119, 262103 (2021)

https://doi.org/10.1063/5.0071280

CrossMark

 
View Export
Online Citation

13 November 2023 06:35:42

 Applied Physics Letters ARTICLE scitation.org/journal/apl

Over 1.8 GW/cm2 beveled-mesa NiO/b-Ga2O3

heterojunction diode with 800 V/10
A nanosecond switching capability
Cite as: Appl. Phys. Lett. 119, 262103 (2021); doi: 10.1063/5.0071280
Submitted: 13 September 2021 . Accepted: 8 December 2021 .
Published Online: 27 December 2021

F. Zhou,1,2 H. H. Gong,1,2 Z. P. Wang,1,2 W. Z. Xu,1,2 X. X. Yu,1 Y. Yang,1 F.-F. Ren,1,2 S. L. Gu,1 R. Zhang,1
Y. D. Zheng, H. Lu,1,2,a) and J. D. Ye1,a)
1

AFFILIATIONS
1
School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
2
Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

Note: This paper is part of the APL Special Collection on Wide- and Ultrawide-Bandgap Electronic Semiconductor Devices.
a)
Authors to whom correspondence should be addressed: hailu@nju.edu.cn and yejd@nju.edu.cn

ABSTRACT

13 November 2023 06:35:42

In this Letter, we demonstrate a large-area (1-mm2) beveled-mesa p-NiO/b-Ga2O3 bipolar heterojunction diode (HJD) with a high Baliga’s
figure of merit of 1.84 (2.87) GW/cm2 from DC (pulsed) measurements. Benefiting from the suppression of electric field crowing at the
designed mesa edge and bipolar current conductivity modulation, the resultant device exhibits advantageous characteristics, including a low
subthreshold slope of 65 mV/decade, a low DC (pulsed) differential specific on-resistance of 2.26 (1.45) mX cm2, a high current density of
2 kA/cm2, and a high breakdown voltage of 2.04 kV. In particular, the Ga2O3 HJD exhibits an 800 V/10 A extreme switching capability with
16.4-ns reverse recovery characteristics, as well as high operation stability at a high temperature of 200  C. This work, thus, makes a signifi-
cant step toward reaching the promise of a high figure-of-merit in b-Ga2O3 power devices.
Published under an exclusive license by AIP Publishing. https://doi.org/10.1063/5.0071280

Baliga’s figure of merit (BFOM ¼ BV2/Ron,sp), which is the critical
trade-off between the breakdown voltage (BV) and the specific on-
resistance (Ron,sp),1 has been extensively discussed as the most objective
and impartial criterion for a semiconductor material to justify its suit-
ability in power switching applications.2–18 As an emerging ultra-wide
bandgap semiconductor material, b-Ga2O3 inherently possesses enor-
mous advantages for realizing a high BFOM, thanks to its high break-
down electric field (>8 MV/cm) and decent electron mobility (200 cm2/
V s).19–22 Based on such superior material properties, tremendous
endeavors have been devoted, and significant advancements have been
achieved in the Ga2O3-based power rectifiers,7 enabling a high BV of
2.44 kV (Ref. 23) or a low Ron,sp of 0.32 mX cm2.14 However, due to the
inevitable design compromise between the BV and Ron,sp,1 the BFOMs
of most reported Ga2O3 power rectifiers are still lower than 1.5 GW/
cm2,7,14 which is well below the theoretical prediction material limit23,24
and far from that of the GaN counterpart (13.5 GW/cm2).25
To fully utilize the material potential toward a high BFOM, the
rational design of NiO/Ga2O3 p–n bipolar heterojunction diodes
(HJDs) has been demonstrated as a very promising strategy to realize
the advanced bipolar rectifiers,7,11,12 which alternatively overcomes the
technological bottleneck of p-type Ga2O3.26 Benefiting from the con-
struction of the p–n depletion region in reverse bias and the bipolar
carrier injection in forward conduction, a high BV of 1.37 kV and a
low Ron,sp of 2.6 mXcm2 were achieved simultaneously in the Ga2O3
p–n HJDs, thus yielding a BFOM of 0.72 GW/cm2.8 More importantly,
it is found that the turn-on voltage (Von) of the device is only 1.73 V,8
which is smaller than that of the GaN p–n diode (3.1 V),25 thereby
contributing to a low conduction loss in power operation. Despite
these inspiring performances, the development of the Ga2O3 HJDs is
still at an early stage. In particular, the premature breakdown of the
HJDs suffers from severe electric field crowding effects at the vertical
heterojunction mesa edge.8,27 As a result, the BV of the current Ga2O3
HJDs has rarely reached above 1.5 kV (Refs. 11 and 12) or even
460 V in the large-area devices.8 The implementation of bevel mesa
terminations is a popular approach to enhance the reverse blocking
capability, whereas troublesome dry etching inevitably introduces
plasma damage to the etched interface, curbing the effectiveness of
bevel electrical field managements.9,18
In this work, by the selective growth of p-NiO upon the n-Ga2O3
layer without any etching damage, we demonstrate beveled-mesa

Appl. Phys. Lett. 119, 262103 (2021); doi: 10.1063/5.0071280 119, 262103-1
Published under an exclusive license by AIP Publishing
 Applied Physics Letters
NiO/b-Ga2O3 HJDs with superior performance, including a high BV
of 2.04 kV and a low Ron,sp of 2.26 (1.45) mXcm2 from DC (pulsed)
measurements, thereby yielding a high BFOM of 1.84 (2.87) GW/cm2
in a large-area (1-mm2) NiO/Ga2O3 HJD. Furthermore, the Ga2O3
HJD shows good rectifying behaviors and thermal stability even at
200  C. In particular, it demonstrated a strong reverse voltage blocking
capability with an ultra-low leakage current of <0.1 lA up to 1.5 kV at
25  C, which is highly desirable for high-voltage switching operation,
as verified under extreme operating conditions of 800 V/10 A. All
these findings clearly imply the notable potential of the Ga2O3 HJDs
for high-power, high-efficiency, and high-temperature applications.
Figure 1(a) shows the cross-sectional schematic of the NiO/b-
Ga2O3 bipolar HJD with small-angle (6 ) beveled mesa termination.
The epitaxial structure was grown by hydride vapor phase epitaxy
(HVPE) on a conductive Sn-doped (001)-oriented b-Ga2O3 substrate,
consisting of a 10-lm Si-doped b-Ga2O3 drift layer with an electron
concentration of 2  1016 cm3. The device fabrication commenced
with the deposition of the back-side Ohmic contact of Ti/Au (20/
80 nm) by electron beam evaporation (EBE) and then rapidly annealed
at 500  C in nitrogenambient for 1 min.8 Subsequently, by using a
multi-hole square-shaped shadow mask with a pitch of 1 mm,
400-nm-thick double-layered p-NiO films with 6 bevel angle were
deposited on the Ga2O3 epitaxial layer by the radio frequency (RF)
magnetron sputtering technique.27 During the sputtering process,28
the substrate was rotated moderately at 4 rpm to enhance the film uni-
formity. The RF power was 100 W, and the target was high-purity
(99.99%) NiO ceramics. The distance between the target and wafer
was maintained at 12.5 cm to minimize plasma damage to the growing
front.27 The growth pressure was 0.6 Pa in an Ar/O2 mixed ambient,
and the flux ratio of Ar/O2 was tuned to modulate the hole concentra-
tions of the double-layered p-NiO films.29 Small-angle beveled mesa
terminations were formed by precisely adjusting the gap between the
shadow mask and b-Ga2O3 wafer as well as the declination angle of
the NiO target with respect to the substrate surface normal. To
improve the interface quality of NiO/b-Ga2O3, a post-annealing pro-
cess was performed at 250  C in air for 1 h. The fabrication was
FIG. 1. (a) Schematic cross section of the beveled-mesa Ga2O3 p–n HJD. (b) SEM
image of the device. (c) C–V and 1/C2–V characteristics measured at 100 kHz. (d)
Band alignment of the p–n heterojunction.
Appl. Phys. Lett. 119, 262103 (2021); doi: 10.1063/5.0071280
Published under an exclusive license by AIP Publishing
ARTICLE scitation.org/journal/apl
completed by the deposition of a Ni/Au metal stack (300/300 nm) to
form the anode contact, which also serves as the Schottky contact for
the Schottky barrier diode (SBD) device.
As determined from the cross-sectional scanning electron
microscopy (SEM) image of the device in Fig. 1(b), the bevel angle of
the p-NiO films is confirmed to be about approximately 6 . The
300-nm-thick NiO bottom-layer and a 100-nm-thick upper-layer,
which were simultaneously grown on the Fe-doped b-Ga2O3 insulat-
ing substrate with Ar/O2 gas flux ratios of 20:1 and 2:1,28 exhibit hole
concentrations and mobilities of 5.8  1017 cm3 and 0.87 cm2/V s
and 2.3  1019 cm3 and 0.34 cm2/V s, respectively, obtained by room-
temperature Hall measurements. The origin of the achieved high hole
concentration was believed to be due to the formation of Ni3þ from
Ni2þ near Ni vacancies by reaction with excess oxygen atoms, thus
creating holes localized on the Ni sites with an acceptable mobility.30,31
Furthermore, the built-in potential (Vbi) of the NiO/Ga2O3 p–n heter-
ojunction is determined to be 2.5 V via capacitance–voltage (C–V)
measurements [Fig. 1(c)].29 Similar to the previously reported
results,11 the conduction band offset (DEC) and valence band offset
(DEV) are evaluated to be 1.2 and 2.0 eV, respectively, and type-II
“staggered” band alignment is identified,27 as shown in Fig. 1(d). For
comparison, 1-mm2 Ni/b-Ga2O3 SBDs and conventional steep-mesa
(90 ) Ga2O3 HJDs are also fabricated on the same wafer by similar
processes.27 The fabricated devices were encapsulated in a standard
TO-220 package.32
Figures 2(a) and 2(b) show the forward DC–voltage (I–V) charac-
13 November 2023 06:35:42
teristics of the beveled-mesa NiO/Ga2O3 HJD and Ni/Ga2O3 SBD on
linear- and semilog-scales, respectively. The NiO/Ga2O3 HJD exhibits
well-behaved rectification characteristics, including a high on/off current
ratio of over 108, a small subthreshold slope (SS) of 65 mV/dec, and a
low Ron,sp of 2.26 mXcm2, which are comparable with the reported
Ga2O3 rectifiers terminated by implanted structures.4 Furthermore, the
extracted ideality factor (g) of this large-area HJD is only 1.23, indicating
a good interface quality of the NiO/b-Ga2O3 heterojunction.33 By per-
forming zero-bias capacitance-frequency (C-f) characterization,27,34 the
interface state density of NiO/b-Ga2O3 in this work is evaluated to be
2.2  1010 eV1 cm2, which is comparable with the previously
reported result (4.70  1010 eV1 cm2).27 This is well supported by the
improved reverse blocking capability with lower leakage in this work.
Moreover, the low Von of 1.76 V is observed, which is lower than the Vbi
of 2.4 V for p–n heterojunctions. It can be understood that electrons
from the conduction band of b-Ga2O3 are transferred into the valence
band of NiO mediated by defective states at the large-area interface.27,35
Compared with unipolar SBDs, one of the unparalleled advan-
tages of bipolar HJDs is that their Ron,sp usually decrease as the bias
voltage increases,36 as presented in Fig. 2(c). By using pulsed I–V char-
acterization with minimum 50-ls pulse width and 0.1% duty cycle,32
the HJD presents a high forward current up to 20 A (2 kA/cm2) with a
continuous reduction of Ron,sp from >10 to 1.45 mX cm2, while the
Ron,sp of the SBD increases significantly after reaching a bias voltage of
7.5 V due to severe self-heating effects.37 This superior conduction
capability of the bipolar HJD is primarily contributed by the conduc-
tivity modulation effect at a dynamic/transient level, which is possibly
induced by the enhanced minority carrier injection at a high forward
bias.8,36 Some have concerned the difficulty of minority carrier diffu-
sion in b-Ga2O3 owing to the self-trapping of holes by theoretical pre-
dictions, and the exact origin of conductivity modulation in such a
119, 262103-2
 Applied Physics Letters ARTICLE scitation.org/journal/apl

FIG. 2. (a) Log-scale DC–voltage (I–V) curves and the extracted ideality factors of the Ga2O3 HJD and SBD. (b) Linear-scale I–V characteristics and the corresponding Ron,sp. 13 November 2023 06:35:42
(c) Pulsed I–V curves and Ron,sp. (d) Comparison of Ron,sp and the maximum current density of the state-of-the-art Ga2O3 rectifiers. T-dependent forward conduction character-
istics of (e) HJD and (f) SBD.

bipolar structure certainly inspires further investigations. Nevertheless,
its low Ron,sp achieved under DC (pulsed) conditions is comparable
with the best prior reports [Fig. 2(d)], especially under high tempera-
ture (T) conditions. With elevated T from 25  C to 200  C,38 the HJD
exhibits an enhanced current capability with a considerable reduction
in Ron,sp [Fig. 2(e)]. In contrast, for Ga2O3 SBDs, severe current
collapse may be primarily caused by the self-heating effect rather than
carrier trapping, and the degradation of Ron,sp leads to a remarkable
increase in the conduction loss [Fig. 2(f)].39
Figure 3(a) shows the reverse I–V characteristics of the Ga2O3
HJD and SBD. Apparently, the leakage current (IR) of the beveled-
mesa (6 ) HJD was greatly suppressed to <0.1 lA at 1 kV, over three

Appl. Phys. Lett. 119, 262103 (2021); doi: 10.1063/5.0071280 119, 262103-3
Published under an exclusive license by AIP Publishing
 Applied Physics Letters
FIG. 3. (a) Reverse I–V characteristics of the beveled-mesa HJD and conventional
HJD and SBD. (b) Benchmark of Ron vs BV. (c) Simulated electric field distribution
of the HJD with different bevel angles. (d) T-dependent reverse blocking character-
istics of the two devices.
orders of magnitude lower than that in the conventional steep-mesa
(90 ) Ga2O3 HJD. Correspondingly, the BV of the beveled-mesa HJD
reaches 2.04 kV, yielding a high BFOM of 1.84 (2.87) GW/cm2 under
DC (pulsed) conditions. As benchmarked in Fig. 3(b), the Ga2O3 HJD
shows a notably higher BFOM than other reported results.7–18 This
excellent breakdown performance is attributed to the effective suppres-
sion of E-field crowding at the small-angle mesa edge, which is further
verified by the simulation of the electric field distribution. Figure 3(c)
shows that the peak electric field (Epeak) at the mesa edge drastically
decreases from 6.8 (90 ) to 3.5 MV/cm (6 ) at a reverse bias of
1 kV. Notably, with a further decrease in bevel angles below 6 , Epeak
gradually stabilizes at 3 MV/cm. To achieve a better trade-off between
the electrical performance and area utilization,18 a 6 bevel angle was
used for termination construction in this work. Additionally, the 1-mm2
beveled-mesa Ga2O3 HJD maintains a low IR of <0.1 lA at a high T
of 200  C [Fig. 3(d)]. Together with good thermal stability in forward
conduction, the beveled-mesa HJD is particularly suitable for high-
temperature applications.
Based on the superior reverse blocking and forward conducting
characteristics, 800 V/10 A extreme switching capability has been
demonstrated in Ga2O3 HJDs. By implementing a widely used double
pulse test (DPT) [Fig. 4(a)],32 the Ga2O3 HJD shows a fast reverse
recovery characteristics with a short reverse recovery time (trr) of
16.4 ns and a reverse recovery charge (Qrr) of 34 nC, presenting appar-
ently lower switching loss than the Si fast-recovery diode (FRD,
RFN5TF8S) [Fig. 4(b)]. Meanwhile, a DPT damping factor (f) of 0.7, a
maximum overshoot current (Irm) of 2.9 A, and a switching loss (Eloss)
of 67 lJ were obtained in Ga2O3 HJDs under 800 V/10 A transient
switching conditions.
In summary, with the advantage of electric field management
with small-angle beveled-mesa termination and inherent bipolar
Appl. Phys. Lett. 119, 262103 (2021); doi: 10.1063/5.0071280
Published under an exclusive license by AIP Publishing
ARTICLE scitation.org/journal/apl
13 November 2023 06:35:42
FIG. 4. (a) Schematic of the DPT circuit. The fast-speed GaN HEMT was used as a
control switch, where CGS is the gate-to-source capacitance and LG includes the
package inductance and loop parasitic inductance. (b) Reverse recovery wave-
forms of the Ga2O3 HJD and Si FRD. trr refers to the time when the reverse current
reduces to 10% of its maximum value, Qrr is calculated by integrating the current
during the recovery period, and Eloss is calculated as the power-to-time integration.
current conduction, a high BFOM of 1.84 (2.87) GW/cm2 is achieved
in 1-mm2 NiO/b-Ga2O3 HJDs under DC (pulsed) conditions.
Furthermore, this device also exhibits promising static/switching per-
formance and excellent temperature stability. These findings reveal the
noteworthy potential of Ga2O3 HJDs for future high-power, high-
speed, and high-temperature switching applications.
This work was supported by the National Natural Science
Foundation of China (Nos. 61774081 and 91850112), the State
Key R&D project of Jiangsu Province (No. BE2018115), and
the State Key R&D project of Guangdong Province (No.
2020B010174002).
AUTHOR DECLARATIONS
Conflict of Interest
The authors have no conflicts to disclose.
Author Contributions
F.Z. and H.G. contributed equally to this work.
119, 262103-4
 Applied Physics Letters
DATA AVAILABILITY
The data that support the findings of this study are available
within the article.
REFERENCES
1
W. Li, K. Nomoto, Z. Hu, D. Jena, and H. G. Xing, IEEE Trans. Electron
Devices 67, 3938–3947 (2020).
2
W. Li, K. Nomoto, Z. Hu, D. Jena, and H. G. Xing, IEEE Electron Device Lett.
41, 107–110 (2020).
3
Q. He, W. Mu, H. Dong, S. Long, Z. Jia, H. Lv, Q. Liu, M. Tang, X. Tao, and
M. Liu, Appl. Phys. Lett. 110, 093503 (2017).
4
H. Zhou, Q. Feng, J. Ning, C. Zhang, P. Ma, Y. Hao, Q. Yan, J. Zhang, Y. Lv, Z.
Liu, Y. Zhang, K. Dang, P. Dong, and Z. Feng, IEEE Electron Device Lett. 40,
1788–1791 (2019).
5
A. J. Green, K. D. Chabak, E. R. Heller, R. C. Fitch, M. Baldini, A. Fiedler, K.
Irmscher, G. Wagner, Z. Galazka, S. E. Tetlak, A. Crespo, K. Leedy, and G. H.
Jessen, IEEE Electron Device Lett. 37, 902–905 (2016).
6 26
J. Yang, S. Ahn, F. Ren, S. J. Pearton, S. Jang, and A. Kuramata, IEEE Electron
Device Lett. 38, 906–909 (2017).
7 27
C. Wang, H. Gong, W. Lei, Y. Cai, Z. Hu, S. Xu, Z. Liu, Q. Feng, H. Zhou, J.
Ye, J. Zhang, R. Zhang, and Y. Hao, IEEE Electron Device Lett. 42, 485–488
(2021).
8 29
H. Gong, F. Zhou, W. Xu, X. Yu, Y. Xu, Y. Yang, F. Ren, S. Gu, Y. Zheng, R.
Zhang, H. Lu, and J. Ye, IEEE Trans. Power Electron. 36, 12213–12217
(2021).
9
Z. Hu, Y. Lv, C. Zhao, Q. Feng, Z. Feng, K. Dang, X. Tian, Y. Zhang, J. Ning,
H. Zhou, X. Kang, J. Zhang, and Y. Hao, IEEE Electron Device Lett. 41,
441–444 (2020).
10
Y. Lv, H. Liu, X. Zhou, Y. Wang, X. Song, Y. Cai, Q. Yan, C. Wang, S. Liang, J.
Zhang, Z. Feng, H. Zhou, S. Cai, and Y. Hao, IEEE Electron Device Lett. 41,
537–540 (2020).
11
X. Lu, X. Zhou, H. Jiang, K. W. Ng, Z. Chen, Y. Pei, K. M. Lau, and G. Wang,
IEEE Electron Device Lett. 41, 449–452 (2020).
12
Y. Hu, S. Wang, Z. Yang, R. Chen, X. Lu, Y. Ren, X. Zhou, Z. Chen, Y. Pei, and
G. Wang, in Proceedings of IEEE International Symposium on Power
Semiconductor Devices and ICs (IEEE, 2020), pp. 178–181.
13
C.-H. Lin, Y. Yuda, M. H. Wong, M. Sato, N. Takekawa, K. Konishi, T.
Watahiki, M. Yamamuka, H. Murakami, Y. Kumagai, and M. Higashiwaki,
IEEE Electron Device Lett. 40, 1487–1490 (2019).
14
S. Roy, A. Bhattacharyya, P. Ranga, H. Splawn, J. Leach, and S.
Krishnamoorthy, IEEE Electron Device Lett. 42, 1140–1143 (2021).
15
J. Yang, S. Ahn, F. Ren, S. J. Pearton, S. Jang, J. Kim, and A. Kuramata, Appl.
Phys. Lett. 110, 192101 (2017).
16
T. Watahiki, Y. Yuda, A. Furukawa, M. Yamamuka, Y. Takiguchi, and S.
Miyajima, Appl. Phys. Lett. 111, 222104 (2017).
Appl. Phys. Lett. 119, 262103 (2021); doi: 10.1063/5.0071280
Published under an exclusive license by AIP Publishing
ARTICLE scitation.org/journal/apl
17
Y. Lv, Y. Wang, X. Fu, S. Dun, Z. Sun, H. Liu, X. Zhou, X. Song, K. Dang, S.
Liang, J. Zhang, H. Zhou, Z. Feng, S. Cai, and Y. Hao, IEEE Trans. Power
Electron. 36, 6179–6182 (2021).
18
N. Allen, M. Xiao, X. Yan, K. Sasaki, M. J. Tadjer, J. Ma, R. Zhang, H. Wang,
and Y. Zhang, IEEE Electron Device Lett. 40, 1399–1402 (2019).
19
N. Ma, N. Tanen, A. Verma, Z. Guo, T. Luo, H. Xing, and D. Jena, Appl. Phys.
Lett. 109, 212101 (2016).
20
C. Joishi, Y. Zhang, Z. Xia, W. Sun, A. R. Arehart, S. Ringel, S. Lodha, and S.
Rajan, IEEE Electron Device Lett. 40, 1241–1244 (2019).
21
S. Kumar, T. Kamimura, C.-H. Lin, Y. Nakata, and M. Higashiwaki, Appl.
Phys. Lett. 117, 193502 (2020).
22
Z. Jian, S. Mohanty, and E. Ahmadi, Appl. Phys. Lett. 116, 152104 (2020).
23
W. Li, Z. Hu, K. Nomoto, R. Jinno, Z. Zhang, T. Q. Tu, K. Sasaki, A. Kuramata,
D. Jena, and H. G. Xing, in IEEE IEDM Technical Digest (IEEE, 2018),
pp. 193–196.
24
X. Zhou, Q. Liu, G. Xu, K. Zhou, X. Xiang, Q. He, W. Hao, G. Jian, X. Zhao,
and S. Long, IEEE Trans. Electron Devices 68, 1501–1506 (2021).
25
J. Wang, L. Cao, J. Xie, E. Beam, R. McCarthy, C. Youtsey, and P. Fay, in
IEDM Technical Digest (IEEE, 2017), pp. 231–234.
S. J. Pearton, J. Yang, P. H. Cary, F. Ren, J. Kim, M. J. Tadjer, and M. A.
Mastro, Appl. Phys. Rev. 5, 011301 (2018).
H. Gong, X. Chen, Y. Xu, Y. Chen, F. Ren, B. Liu, S. Gu, R. Zhang, and J. Ye,
IEEE Trans. Electron Devices 67, 3341–3347 (2020).
28
H. Sato, T. Minami, S. Takata, and T. Yamada, Thin Solid Films 236, 27–31 (1993).
H. H. Gong, X. H. Chen, Y. Xu, F. F. Ren, S. L. Gu, and J. D. Ye, Appl. Phys.
Lett. 117, 022104 (2020).
30
M. I. Pintor-Monroy, D. Barrera, B. L. Murillo-Borjas, F. J. Ochoa-Estrella, J.
W. P. Hsu, and M. A. Quevedo-Lopez, ACS Appl. Mater. Interfaces 10,
38159–38165 (2018).
31
B. Subramanian, M. Mohamed Ibrahim, V. Senthilkumar, K. R. Murali, V. S.
13 November 2023 06:35:42
Vidhya, C. Sanjeeviraja, and M. Jayachandran, Physica B 403, 4104–4110
(2008).
32
F. Zhou, W. Xu, F. Ren, D. Zhou, D. Chen, R. Zhang, Y. Zheng, T. Zhu, and H.
Lu, IEEE Electron Device Lett. 42, 974–977 (2021).
33
W. Hao, Q. He, K. Zhou, G. Xu, W. Xiong, X. Zhou, G. Jian, C. Chen, X. Zhao,
and S. Long, Appl. Phys. Lett. 118, 043501 (2021).
34
C.-T. Lee, C.-C. Lin, H.-Y. Lee, and P.-S. Chen, J. Appl. Phys. 103, 094504
(2008).
35
M. Ji, N. R. Taylor, I. Kravchenko, P. Joshi, T. Aytug, L. R. Cao, and M. P.
Paranthaman, IEEE Trans. Power Electron. 36, 41–44 (2021).
36
S. Han, S. Yang, and K. Sheng, IEEE Electron Device Lett. 42, 300–303 (2021).
37
B. K. Mahajan, Y.-P. Chen, J. Noh, P. D. Ye, and M. A. Alam, Appl. Phys. Lett.
115, 173508 (2019).
38
B. Wang, M. Xiao, X. Yan, H. Y. Wong, J. Ma, K. Sasaki, H. Wang, and Y.
Zhang, Appl. Phys. Lett. 115, 263503 (2019).
39
J. Yang, F. Ren, M. Tadjer, S. J. Pearton, and A. Kuramata, AIP Adv. 8, 055026
(2018).
119, 262103-5