UNS Srengtn of the Hunun at device tte in OBE of apptications that seem exes Re alerts commonty used i sohd-ate device iui, | eR ofthe peak sructare) electronic The const ; ton of every diceete (indivi) sois-sae mete device or itepratd cicut bees Ser nacre Seman TN | ‘asun Semicond cee ae uaaay aesuacnrverren tte | rt area peclalcast of cements hasheg 6 | p oacereny etter tof an a = | Wisconsin In general, semiconductor materials fal) ime owe of } Vi0g ani Tech. Compound. aires cceicoedac exo | ts Oro ERGs coal saci, where ‘compouns seme } ote I (GaAs), cadmiom slfide (CAS), palms nari a wt 52 SSE ity atone 0 an et sean) contre oor te 0 remiconductors used mt frequent a thc coseracion of electronic eves are Go Sand Cake en EE top I fit few decades following the Gomory of te ate a 1532 208 the tramsis- 1 1947 germaniom was vied ines Fun find and was available To fairy large ovens Blain very high Tevels of panty, ac faporat mest ‘Wver, il was discovered it The easy years Mur Sioties and wraasisior’s Eetmanium as the base material wuffered froes iow levels lity de primarily 1 lus sensitivity to changes in temperature Fi Se tase. eseaits were aware that another material silicon, had improved temperature seancsices, bt the refcing process for a manufacturing silicon of very high levels of party was weil the Cevelopment stages. ted by Jack S. Finally, however, in 1954 the fire sihove taMmEEY was sacroduced. and Silicon quickly weap rieeas, BECAME the semicondicor materia of coi No oy incon less temperature sens tive, but iti one of the mont abundant maieruls ox ca, removing any concerns about availability. The Mood gales tow opened w Ges new material. and the manufacturing ‘and design techoology improved eatily Gough te following years tothe current high level of sophistication. = Gass : a ie ein Seco naaix ahermarh oe or ncn Fes see SPIES enereet atbgh he 8 hi age ja bam! meso frm scale aon Oc eiine pe uel Sae Soe nes mi cciean oesnfaame sertaioemk apo Fic.12 Incl Cord17 Parone Edition jp nica in Fg 13.sticon tas, i nef 12 on cing aces chemical agent) For 2 RE lero (the sane : < eee) For = ORemoR shell whack OM shel, cletons, germanium has arsenic that ig if ae ‘and silicon then, ume *¥enic that ia pur slcon oe ema soi vondig unger ern Ths bonding fg, smenthened yh sharing ein, al emt Because GuAsisa semicon. here sharing base mo tle sacar ng 1 Echo ti ‘Sigler pe, Theresa stag elects sia in AES bt now fv lect ae provided by the AS ao ae ieee By i Gu om. (Concent Gah cr, ee Peper aeeereier ri ttnfealstpte eta soem numberalo ent Sie wine mec Go et vaste Reine Mail Facey Semicmtacr A s ry Ouse “opr mas ge EN Aba ase Sei of very Wp py. Real Ga is wa coe of i eben rena WS ce we shed vu cnt pros fam ‘per hve aaa Panty vel input Teel af | prin 10 Ncw an ery, ih eg eb oe of easy, They sera oo onsen St toa of oe par Tei (oe proper wpe ane ne waer raison sed ancenpe tt Ra rs ene) force ae ‘We obvioutty Have io deal with a whole nw level of com a cungarson Wes be Sakasi Semiconductor madam. Th ality hnge he tures of sane roess salle. Erman ia pli aeemide va dag proces & cael i Stl in Secoes 1 Sud 16 pe car en oe Sa nc pas a fie Red arta demane ae Eos SBiemeraue beter moana pom tee ae ERTS Eas iia ints Svan re mal Nr Sinner aves! clresfaite Sprareagea smoaereaas inne an ncendngiefcaitarn Sepia eee frm oc neg metas a li Re tg ‘break the cov alent bond aad t contribute to the sumber of fee camer Therefore: Sesicondcior materia here ngaoe sempre en, 4 ENERGY LEVIS: Within the atone suc of ech aad en ee tags specific enenty levels: wi ech el along cre owe a RE Le Tey ee SSetcd ona aamangeay anes eee ee "Th farther an lctron i rom the males the Rgher isthe energy fe and any See ee ‘Noten Fig 16x tha only speific energy level can exis forthe elacwon inthe toc ‘trctue ofan soated stom The rea is seis Pes agiInsulator ‘An cleo inthe valence hand of licen mas absorb more eneray than on nthe aloes band of permanant to become foc carie: Slndarly an dca inthe lence band alm arene mas in (pemaniam enter the conduction ban eeepc rhe Non ame perks - =ernest ti ene ae cl tecommcin pining TIPE moemet 9 mein pe pent Stet LED, wach att eto shay Te wile ns catabliniand tga igre wb orn te Gatands cocuaiy For ondicihe ovelappng of lence and cond sued he freon oN Moa ec ced wpb be sles Peg seer eeu OH Sil oceaaa St pce ie eome coe sel Satan an ea as St Palen west ees os adap be ‘erruic neces ha fom for GaAsibe 14 slice ae w eatin a ek Fae Aah deeming Be "Taweeste as a gem vdiregany ‘Hewat mar ey equi To valage Ve MID ae Weer) aE V=WIO, Stig cme fees ns pal {cQOREOT LY oUhs in nee tone ee wage 16x EUV) 6x1) aod tev 6x 10°95 aay 15_e-TYPE AND p-TvPE MaTERUALS eae Sig te mil wd ox esentutl oh ston fea secon ee canal ser tt secon das solely wi Si senicontilrs Bete GES and GaAr se aor ‘cra toning, he zainrcar aly be neni oe ee ar mee mo eis aquacuring press, "As inated ear the chaatensa ofa semiconductor mater canbe sess i= _ iy. ada spec mpi sos othe wave pr sender teal Tempus srg nyt yt 0 mlloe sss eb [gone ma ake neg rel on ait matorl Thre ew ern mari insures ing ane semienusce taeinn nae an pape meni Eh desis woe deal me along Scion| oO j | i i ita hs og pce sic aicamansng tented | woh te uote arn andar die Noe erase aay | Gielen) ape eich ae aunt Fe ant Troe fess oo ulin ea betay | i a gas nae EN ation fon um emer The sauna gamma {lstznonerorewneton ih coisa! oot erate apreany remenpeto arn Seal ere Stn ees 0" Ws Sage vet! 0 en (10th 107/107 = 10° indicates that he carrier concentration has increased by aratioof 100,000 seme EP TR ret ec of dno imprison he every ban rate ‘pType Material Tepe mt a rica cepts inpurty ‘itn werkt he sce mar hepesy seam ee coro, gal, tdnduy Each ina nlc ol a ETS Tce ie Table of Elements rere wat Grou If ecase cach haste anlenes lesan . ‘ees cae ro ie det oon cbse of sg sine Fig 19, ‘Not thatthe sow an insuicient aur eccron edn tere erro ting the re indicing The aBseice of a negative charge. Sine the reul in Sane ey apes aa segue cay “pete nlite Th iid inp alae rom cetera Tie cling 7 cy war etc ‘the n-type materi hese “iat eye ma plant eeElectron versus Hole Flow The effect of te hole 0 conduct ‘uiiient inet eer Bre is covalent bond uit ne wae sane ead in he cova te eae en 1.10 econ vert ok ‘Majority and Minority Carriers or Sis only o tose few lee. {athe janie state, te umber fi sects ine and hat have scgied suit neg from tera Ui vues irons inthe valen ‘ebeeaK Ta Covalent bond orto the Tew TNpURer that could not Be removed. The gsa cre represec UT Very Tied soppy of zie Tf behind in the cova holes. Fan m-lype material, the nuiBerof tole Ks aot change sigan Trom this into leg Thee sl therefore, sae umber of eta far ooweghs te this reason siumber of holes. Mean pone meer UIT the eletrom calle majority cri and the hele the minority carrie. or the p-type material the numberof oles far ourmeigh the wumber of eletons st shown ia Fig. 1.116. Therefore: ‘Ina pype material the holes the majority carr andthe electron i the minor ari. "Wate itn cen oe ‘ithe plus signi ard othe tbe in te eee‘eal wil estima sermcondactreleenol conser 1.6 _semiconpuctor pIODE__—_—@ ‘Now that buh mand pype material: Sr erous 10 Feng. is lectronic device: The semica with applica ‘eothing more, just the sans mp oe se are acne eine Ale The base simpli ats onsrson simply einorcs He See No Applied Bias (V [Aide asta two materials are “cine te electors andthe holes nthe epion ofthe ne eslng in a ORs cuir ia ie repON near Ge junction. Tax NOt Pig 12st he Sly partes splayed WS Tei are een Jee carer have boc aba. Cthisregion of lie and neque ler (othe "aepievon of re carer in the ion.) each re Sneed TEER of ch meal, a mo-trminal device results, a8 shown in Fis. 128 and 1.12. Three opins then bce s¥aTaBI Wo bias onward bias and revere Bo. Tete Bay le sapien ofan eternal vlge setae vo tema i device weeks repens The condion show is Faget Toe nd 12 isthe os sao eae ee extra ange spied Lee sly Ste ie stg sad osloaay teach n ig 1b he Sm 1 Sencondbeo ide provided to show ts conesponcence wth ine i. ‘sch gue ts clavate ap vais 0 nob) and the TESS 07, mh ean outed re. The deck ofa alae acer Fee ee “Tao coment vent this cay pian dscurtion ts import wee ae silat tbe valige srs eine. 120 unde Gren geese dress ‘septs wil be cope Ue dened poate eee oan irelaeapled ar ached he eitndace dade, isl omsded apne lage ete nice se. 1.125, ‘Sarena he tad aon tne EMESIS Th se ee ay minorly canton Geo ras combos, a themed wii be pit fry sae tral that find seman carte ‘senetacec vil fargmauy a, {eel ayer negate fons ad te whe luecton th gress he ancien tte ne mal We rhea oe op a Sh nde Sn tere ee BE TIIE ere mati cari oh mara = Beate a tp lllMet nas Fe ‘AP con vith nextel) on iteration of charade be, ‘th he defied pry and he camet dete} demncten hake ee ‘ows crab exermal wml fte de nen Vpn sce FRB tie in ee rad nt ae er eof eof pune ose np aa a oe case SEPUpE lew migae lna Uses ti soe aremwe ‘a Hover, he under malny een see SIS oe ee ‘hava bea smal onkeref mpiyeaner stheulseoce eee eSB depleon pon ODE maa Ayan. be uns aT Ae eae Mptad tomer ie le pp ml Teka Ste msanyerir coma bette oe Sania of BE ere tb lve mapas oe ow vec we ch te tf net cin age, Ths atone oso fer cach peo air fow ind ye saline Te ape Wet ‘speenng WHO vn og nt Sew See Ba ae {Wo maps rot et efor celina pea een MER en ang carve eral ecto nmi Bes Tah anc ofan opps cre ear ode, the nfo of hae Wawaretos ames Tatar wat he cet ne mit coi i. ov in FL aim — ‘Reverse-Bias Condition (Vp <0 V) an exe pout of. Vis ppd scrote ich hat he poive nl eae sel agew na amc Siow : tou te om oa wil moe RET Woe oes tee of the ppd WARE Fr sir a, aero coven ey aa eet eto bine a i SEMCONOUCTOR DIODEForward-Bias Condition Vp > 0 V) pe maa ad nen penal nape ‘al and Poles the p-type mei to eco ewido depletion eon at. Feit Forward -jnton() ne ondin forward ar, tat erm fwd reco of rending oreDIANE 1 Ac tempers of 27°C Sateen: Sussing io Ba, (1.3, we ob “The eral vopg wil become an inert preterit wala flow in his 2)-wih alter deed uanies ny pper seme comes How 2 ncnvely theta allo is sip pert this ae care and whic acters eit supe ed in F115 athe dashed in. we fcompoent fo ac eon of Ania, Ey ver itil poi to vader te source of be "A plo of Exp (1.2) wih 1, = 10 pA i vk expand Bq, (1D into the eiowing Term, he coating 1S. be dserbed with increased lary tpn tao 1 ot Vosie fit trot the sbove equation wil row very quickly and Bet For postive vale. sour Preyer theft of th sce er. Tee ste flowing ein teh sa reves end keson ie expendi format pein i F116 Tomei" (oyosiive). . mE = Ft nip wit he econ roe temperature sealllfor ever °C wel reves ta en. Te oct ply th Compan on aa aa alotasin ent ota he eg FON DE ag ae va Enea ef ne ag mi = serra en rn tae 4 SSSA unspent hc wea ‘ema ates he Fatal nent abel Yor e117 Ate vole acs be de nen a he evens eon, heal of te 5, wills increase. E ioe carr espnsible rain ~The arabe ren Vay i oping levels inh and rials However as Voy decreases to very low levels, such a ~5V, anor mechansh called Zener breakdown, will contribute to the sharp tangent characteris. I occurs becase ther isa strong elect fel i the region ‘fhe junction that can aisropt he bonding forces within the stom and "generate" carton, Although th Zenrhakdown mechanisms sinificant contribute oaly at lower ewes of Vigy, thas in the chatactersiic at any TeVET is called the Zener. and Sper genre ii chains oF junction an calle ae sete inde aSeae 15 brealdown region ofthe semiconductor diode described mus be avoided ifthe tepom of asyiem oto camp tee Oe sg cee ee ‘i this reverse-voltage region, end wc cerecmn reverie pte ta, abe. i "ag lel alae inp fee ‘he Pea eer rate PR ring) 2 MP the PIV rating or carving capacitya vapneo an gene war feck eri, UAL 2 SSL Speman ofr sree Brean wotages fo cut materia power Reel by aboat 10%, with scahdsen wages at ically extend be Be Sy ae TY Thee ae S poser code wapboraiows tage sR ONY Se Saacaiy nas reoares vedages of es an 100 Vwi mutons st Sa samp Sega Jude brakes volaget mes Oe Ares of reverse satrason cuens ad sts out dav te lest desi hance. peabiown votages Ge const A fac soe agpeing = FS aoe face tndy's masts FS TAME onan eperang epee foc each matriak—20 impor econ Mb oe Recent ex ecg mobility face is provided Sarna can rages trough the mS Teta Gum Semi Sen five tes tat of silicon aad Or se Ge ae chen eed in highapeed a St 2 Ts teed in wees creme Se SET ES ech poet Y athe cre bth SN Soe Soman of fn ighapend so acon wens Bat