SUP/SUB60N06-18

Vishay Siliconix

N-Channel 60-V (D-S), 175C MOSFET

   
V(BR)DSS (V) rDS(on) (
) ID (A)
60 0.018 60

TO-220AB
D

TO-263

DRAIN connected to TAB G

G D S G D S
Top View
Top View S
SUP60N06-18 SUB60N06-18
N-Channel MOSFET

            

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60
V
Gate-Source Voltage VGS
20

TC = 25C 60
Continuous Drain Current (TJ = 175C) ID
TC = 100C 39
A
Pulsed Drain Current IDM 120

Avalanche Current IAR 60

Repetitive Avalanche Energya L = 0.1 mH EAR 180 mJ

TC = 25C (TO-220AB and TO-263) 120b

Power Dissipation PD W
TA = 25C (TO-263)c 3.7

Operating Junction and Storage Temperature Range TJ, Tstg –55 to 175 C

     

Parameter Symbol Limit Unit
PCB Mount (TO-263)c 40
Junction to Ambient
Junction-to-Ambient RthJA
hJA
Free Air (TO-220AB) 62.5 C/W

Junction-to-Case RthJC 1.25

Notes:
a. Duty cycle  1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 70290 www.vishay.com
FaxBack 408-970-5600

S–57253—Rev. D, 24-Feb-98 2-1
SUP/SUB60N06-18
Vishay Siliconix

             

Parameter Symbol Test Condition Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60

V
Gate Threshold Voltage VGS(th) VDS = VGS, IDS = 1 mA 2.0 4.0

Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA

VDS = 60 V, VGS = 0 V 1
Zero
Z Gate
G Voltage
V l Drain
D i Current
C IDSS VDS = 60 V, VGS = 0 V, TJ = 125C 50 mA
A
VDS = 60 V, VGS = 0 V, TJ = 175C 150
On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V 60 A

VGS = 10 V, ID = 30 A 0.014 0.018

D i S
Drain-Source On-State
O S Resistance
R i a rDS(on) VGS = 10 V, ID = 30 A, TJ = 125C 0.024 0.030 W

VGS = 10 V, ID = 30 A, TJ = 175C 0.031 0.036

Forward Transconductancea gfs VDS = 15 V, ID = 30 A 49 S

Dynamicb
Input Capacitance Ciss 2000

Output Capacitance Coss VGS = 0 V,

V VDS = 25 V
V, f = 1 MH
MHz 400 pF
F
Reversen Transfer Capacitance Crss 115
Total Gate Chargec Qg 39 60
Gate-Source Chargec Qgs VDS = 30 V
V, VGS = 10 V,
V ID = 60 A 12 nC
C
Gate-Drain Chargec Qgd 10
Turn-On Delay Timec td(on) 12 30
Rise Timec tr VDD = 30 V,, RL = 0.5 W 11 30
ns
Turn-Off Delay Timec td(off) ID ] 60 A, VGEN = 10 V, RG = 2.5 W 25 50
Fall Timec tf 15 30

Source-Drain Diode Ratings and Characteristics (TC = 25C)b

Continuous Current Is 60
A
Pulsed Current ISM 120
Forward Voltagea VSD IF = 60 A, VGS = 0 V 1.6 V
Reverse Recovery Time trr 60 ns
Peak Reverse Recovery Current IRM(REC) IF = 60 A,
A di/dt
di/d = 100 A/ms
A/ 6.0 A
Reverse Recovery Charge Qrr 0.4 mC

Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

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2-2 S–57253—Rev. D, 24-Feb-98
 SUP/SUB60N06-18
Vishay Siliconix

           

Output Characteristics Transfer Characteristics

100 100

VGS = 10, 9, 8, 7 V
80
75
I D – Drain Current (A)

I D – Drain Current (A)

6V
60

50

40

25 TC = 125C
5V 20
25C
4V
–55C
0 0
0 2 4 6 8 10 0 2 4 6 8 10

VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)

Transconductance On-Resistance vs. Drain Current

70 0.020

TC = –55C
60
25C 0.016 VGS = 10 V
r DS(on) – On-Resistance ( Ω )
g fs – Transconductance (S)

50
125C
0.012
40

30
0.008

20
0.004
10

0 0
0 10 20 30 40 50 0 20 40 60 80 100

VGS – Gate-to-Source Voltage (V) ID – Drain Current (A)

Capacitance Gate Charge

3000 10

2500 VGS = 10 V
V GS – Gate-to-Source Voltage (V)

8 ID = 60 A
Ciss
C – Capacitance (pF)

2000
6

1500

4
1000
Coss
Crss 2
500

0 0
0 10 20 30 40 0 10 20 30 40

VDS – Drain-to-Source Voltage (V) Qg – Total Gate Charge (nC)

Document Number: 70290 www.vishay.com
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S–57253—Rev. D, 24-Feb-98 2-3
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On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.4 100
VGS = 10 V
ID = 30 A
2.0
r DS(on) – On-Resistance ( Ω )

TJ = 150C

I S – Source Current (A)

1.6
(Normalized)

TJ = 25C
1.2 10

0.8

0.4

0 1
–50 –25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5
TJ – Junction Temperature (C) VSD – Source-to-Drain Voltage (V)

    
Maximum Avalanche and Drain Current
vs. Case Temperature Safe Operating Area
70 200
10 ms
100
60
Limited 100 ms
by rDS(on)
50
I D – Drain Current (A)

I D – Drain Current (A)

40 10
1 ms

30
10 ms
20 1 100 ms
TC = 25C dc
10 Single Pulse

0 0.1
0 20 40 60 80 100 120 140 160 180
0.1 1 10 100
TC – Case Temperature (C) VDS – Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Case

2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1

0.1

Single Pulse
0.05 0.02

0.01
10–5 10–4 10–3 10–2 10–1 1 3
Square Wave Pulse Duration (sec)

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FaxBack 408-970-5600 Document Number: 70290

2-4 S–57253—Rev. D, 24-Feb-98