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In this weak interaction regime, seismicity is 38. R. Porter, G. Zandt, N. McQuarrie, Lithosphere 3, 201–220 (2011). but is not limited to a nondistribution agreement. Please contact
temporally uncorrelated and, if asperities have 39. P. Audet, J. Geophys. Res. 120, 3527–3543 (2015). the authors for additional information.
a characteristic size, the earthquake size distri- 40. D. S. H. King, C. Marone, J. Geophys. Res. 117, B12203 (2012).
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beneath LB. A systematic decrease of Re/D with www.sciencemag.org/content/354/6308/88/suppl/DC1
H
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21. Materials and methods are available as supplementary skite PV devices processed from solution inks now (d) phase (Eg = 2.82 eV) is thermodynamically
materials on Science Online. convert >22% of incident sunlight into electricity,
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Petroleum Geologists Memoir 52, K. T. Biddle, Ed. (1991), semiconductor presents a major technical hurdle Chemistry, Indian Institute of Science Education and Research
pp. 35–134. to commercialization. Under environmental stress, (IISER), Pune 411008, India. 3Department of Chemistry and
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4
25. J. R. Boles, G. Garven, H. Camacho, J. E. Lupton, Department of Electrical Engineering, University of Washington,
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the latter of which is volatile (2). Seattle, WA 98195, USA. 5Metallurgical and Materials
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(2011). atile organic component is highly desired. The *Corresponding author. Email: joey.luther@nrel.gov
Transmission (a.u.)
Film
lation of CsPbI3 QDs is more difficult than that of
Abs./PL (norm.)
Fig. 4. CsPbI3 optoelectronic devices. (A) Schematic (with TEM image of QDs) and (B) SEM cross-section of the CsPbI3 PV cell. (C) Current density–voltage
curves of a device measured in air over the course of 15 days. The black diamond represents the stabilized power output of the device at 0.92 V, as shown in fig. S9.
(D) External quantum efficiency (black, left ordinate) and integrated current density (blue, right ordinate) of the device. (E) EL spectra of CsPbI3 PV cell (CsPbI3 QDs
synthesized at 170°C) under forward bias. (Inset) A photograph of the luminescent device. (F) PL (dashed lines) and EL (solid lines) spectra of completed devices
fabricated by using CsPbI3 QDs synthesized at 170° and 180°C, demonstrating size quantization effects in the completed devices.
QDs in the films to the size of the crystals (given the have not optimized the device architecture or AC KNOWLED GME NTS
quantum confined optical properties) independent the QD film-treatment scheme. We found that We thank J. van de Lagemaat, W. Tumas, H. Choi, M. Beard, and
of the surface species. However, we found that pro- dip-coating spin-cast films in neat MeOAc and J. Berry for helpful discussions and B. To for SEM imaging. We
longed annealing at temperatures >200°C causes MeOAc saturated with Pb(OAc)2 or Pb(NO3)2 all acknowledge support from the Center for Advanced Solar
further grain growth and thus induces a phase work reasonably well (JV-scanned PCE > 9%) in Photophysics, an Energy Frontier Research Center funded by the
U.S. Department of Energy, Office of Science, Office of Basic
transition to the orthorhombic phase (fig. S4 and PV devices. Large diffusion lengths and mobility Energy Sciences for quantum dot coupling and solar cell
table S1) (28). Additional strategies to preserve values have been measured in CsPbBr3 QDs by structures. Device durability and structural phase characterization
the phase in sintered QD films are being explored means of terahertz spectroscopy (37); however, a was performed within the hybrid perovskite solar cell program of
(35). We have observed cubic-phase CsPbI3 with better understanding of the electronic coupling the National Center for Photovoltaics funded by the U.S.
Department of Energy, Office of Energy Efficiency and Renewable
edge length up to 50 nm using the solution-phase is critical to maximizing long-range transport in Energy, Solar Energy Technologies Office under contract DE-AC36-
synthesis described here. QD perovskite films. 08GO28308DOE. The original conception and QD synthesis was
We also probed the interaction of Pb2+ salts Given the PL properties of these perovskite QDs, performed under the Laboratory Directed Research and
with QDs in solution and on films by monitoring we explored their use as LEDs. The PV devices Development program at NREL. A.S. acknowledges the Bhaskara
Advanced Solar Energy fellowship funded by the Department of
the fluorescence (fig. S5) (28). Titration of a small produced bright visible electroluminescence (EL) Science and Technology, government of India, and Indo-U.S.
amount of Pb(OAc)2 dissolved in MeOAc to the when biased above VOC (Fig. 4E, inset). The EL had Science and Technology Forum (IUSSTF). E.M.S. acknowledges a
QD solution showed an enhancement in PL, sug- a low turn-on voltage near the band gap of the NASA Space Technology Research Fellowship. D.T.M. acknowledges
gesting improved surface passivation. The sur- CsPbI3, with increasing intensity at larger applied the NREL Director’s Fellowship. All data in the paper and
supplementary materials are available. An application has been made
face treatments increase the PL lifetime over that biases (Fig. 4E). These spectra provide direct evi- for a provisional patent (U.S. patent application no. 62/343,251).
of neat QD films, which highlights the importance dence that quantum confinement is retained in
of surface chemistry in this QD system (fig. S6 and the complete devices, which is critical to retain- SUPPLEMENTARY MATERIALS
table S2) (28). Titrations with only MeOAc caused ing the improved cubic-phase stability, as seen by www.sciencemag.org/content/354/6308/92/suppl/DC1
fast PL quenching. Similarly, dip-coating of the the shift in both the EL and PL spectra of devices Materials and Methods
Supplementary Text
QD film in a saturated solution of Pb(OAc)2 in with different-size QDs (Fig. 4F). The synthesis of Figs. S1 to S12
MeOAc resulted in a PL enhancement of ~350% normally unstable material phases stabilized Tables S1 to S3
compared with dip-coating in MeOAc alone. through colloidal QD synthesis provides another References (38, 39)
We fabricated PV cells with CsPbI3 QD films mechanism for material design for PVs, LEDs, 1 June 2016; accepted 7 September 2016
as the photoactive material. A schematic of the and other applications. 10.1126/science.aag2700
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