This article has been accepted for publication in IEEE Photonics Technology Letters.
This is the author's version which has not been fully edited and
content may change prior to final publication. Citation information: DOI 10.1109/LPT.2022.3205028
IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. XX, NO. X, XXX,XXX
Light trapping in conformal CuO/Si pyramids
heterojunction for self-powered broadband
photodetection
Jing-Yue Li, Long-Qiang Shan, Li-Yan Liang, Shi-Rong Chen, Li Wang, Yu-Xue Zhou，
Chun-Yan Wu, Lin-Bao Luo, Senior Member, IEEE
 semiconductor manufacturing techniques. Thanks to its
Abstract—In this letter, we report a conformal CuO/Si
micropyramids heterojunction photodetector fabricated by
RF reactive magnetron sputtering CuO nanofilm onto the
dense and random Si micropyramids. The device presents
a prominent photovoltaic effect over the broad wavelength
range (300-1300 nm), which enables efficient self-powered
broadband photodetection, giving a peak responsivity of
279 mA/W and specific detectivity of 1.18 × 1011 Jones at
zero bias upon 810 nm illumination at light intensity of 5.9
μW/cm2. Compared to its planar Si counterpart, the
conformal CuO/Si pyramids heterojunction photodetector
shows a significantly enhanced photoresponse over the
broadband region. According to the theoretical simulation
of photon absorption in Si pyramid structures, this should
be ascribed to the pronounced light trapping effect of the
pyramid structures. The light-matter interaction in the
heterojunction was accordingly enhanced, leading to the
improved photoresponse. This work is well compatible
with the current complementary metal-oxide
semiconductor (CMOS) technology and provides a facile
and effective strategy for the on-chip high performance
photodetection.
Index Terms—Si pyramids, self-powered photodetector,
light trapping
I. INTRODUCTION
S ilicon (Si) is the second abundant element in the earth,
which has attracted great attention in the field of electronic
and optoelectronic devices owing to its high carrier mobility,
long-term stability and the well-established Si-based
This work was supported in part by the National Natural Science
Foundation of China under Grant 62074048, in part by the Natural
Science Foundation of Anhui Province under Grant 2108085MF229 and
Grant 2208085MF177, in part by the Key Research and Development
Plan of Anhui Province under Grant 2022f04020007 and in part by the
Fundamental Research Funds for the Central Universities under Grant
PA2020GDKC0014 and Grant JZ2018HGXC0001. (Corresponding
authors: Shi-Rong Chen; Yu-Xue Zhou; Chun-Yan Wu.)
Jing-Yue Li, Long-Qiang Shan, Li-Yan Liang, Shi-Rong Chen, Li
Wang, Chun-Yan Wu, Lin-Bao Luo are with the School of
Microelectronics, Hefei University of Technology, Hefei 230009, China.
(E-mail: srchen@hfut.edu.cn; cywu@hfut.edu.cn)
Yu-Xue Zhou is with College of Physical Science and Technology,
Yangzhou University, Yangzhou 225002, China. (E-mail:
yxzhou@yzu.edu.cn)
Copyright © 2022 IEEE. Personal use of this material is permitted.
However, permission to use this material for any other purposes must be
obtained from the IEEE by sending a request to
pubs-permissions@ieee.org.
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1
suitable bandgap (~1.12 eV), Si-based photodetectors have
become the most commonly used commercial photodetectors
for visible light detection (450-800 nm) [ 1 ]. However, the
performance of planar Si-based photodetectors is limited by the
high optical reflection loss of polished crystalline Si in the
visible region (up to 40%) [2]. Extensive efforts have been
devoted to improving the efficiency of light harvesting and
subsequently the performance of Si-based photodetectors. For
example, light trapping effect of Si micro/nanostructures [3-6],
including Si microholes, Si nanowires and Si micropyramids
(both upright and inverted), has been well demonstrated in both
experiment and simulation.
Si pyramids, especially the random pyramids, stand out from
the textured Si due to their intriguing merits: (1) Random
micro/nanostructures are more helpful to achieve broadband
enhancement of light absorption. Light reflection of upright Si
pyramids can be suppressed to about 10% within the broadband
wavelength region (400-1000 nm) [7] and near-Lambertian
light trapping effect can be achieved in ultrathin crystalline Si
(30 μm) by utilizing random Si micropyramids [8]. (2) The
surface area of Si pyramids is only 1.7-fold their planar Si
counterpart, remarkably lower than that of other Si
nanostructures [ 9 ].This gives rise to a lower surface
recombination and facilitates the higher efficiency of light
harvesting. (3) Random upright pyramids can be easily
constructed on the upper surface of Si through the anisotropic
wet etching in alkaline solution [ 10 ]. Neither complicated
photolithography process nor precisely controlled mask is
required, making it practical for larger-scale and low-cost
manufacturing.
Herein, the conformal CuO/Si micropyramids heterojunction
was fabricated, which functioned well as a self-powered
photodetector over a broad wavelength region (300-1300 nm).
The remarkably enhanced photoresponse compared to its
planar Si counterpart has also been revealed by the theoretical
simulation based on Silvaco Technology Computer Aided
Design (TCAD).
II. EXPERIMENTS
A. Device Fabrication
For the fabrication of the self-powered CuO/Si pyramids
heterojunction photodetector, CuO film was deposited onto Si
pyramids through RF reactive magnetron sputtering for 30 min
to form a conformal heterojucntion, using a high-purity Cu
 This article has been accepted for publication in IEEE Photonics Technology Letters. This is the author's version which has not been fully edited and
content may change prior to final publication. Citation information: DOI 10.1109/LPT.2022.3205028
Li et al.: Light Trapping in conformal CuO/Si micropyramids heterojunction for enhanced self-powered broadband photodetection
Fig. 1. (a) Schematic illustration of the CuO/Si pyramids heterojunction
photodetector. (b) The bird-view SEM image of Si pyramid arrays. The
inset shows the side length distribution of Si pyramids. (c) A typical
cross-sectional SEM image of CuO/Si pyramids hybrid structure, the
inset shows AFM image of CuO film. (d) Cu 2p core level XPS
spectrum.
target and the mixed gas of Ar (20 sccm) and O2 (15 sccm) as
the working gas [11]. In a typical process for the fabrication of
Si random micropyramids, a 2 × 2 mm2 window was firstly
defined on a pre-cleaned n-type lightly doped (100) Si wafer
(doping concentration: ~1015 cm-3) with 300 nm SiO2 insulating
layer through photolithography method, followed by etching in
a buffered oxide etch solution (BOE, HF: NH4F: H2O=3 mL: 6
g: 10 mL) to remove the unprotected SiO2 layer within the
window. Dense and random Si micropyramids were then
formed via anisotropic etching in a mixture solution of NaOH:
(CH3)2CHOH: H2O (3 g: 3 ml: 54 ml) at 80oC for 40 min. In-Ga
alloy was pasted onto the rear side of the Si wafer to function as
the bottom electrode and a layer of chemical vapor deposition
(CVD)-grown monolayer graphene was adopted as the top
electrode, which was transferred to the top of heterojunction
through the polymethylethacrylate (PMMA)-assisted wet
transfer method and facilitated the high-efficient collection of
photo-generated carriers.
B. Device Characterization and Theoretical Simulation
Photoelectronic characterization of the CuO/Si pyramids
heterojunction was conducted on a semiconductor
characterization system (Keithley 4200-SCS) at room
temperature. Laser diodes with different wavelengths (Thorlabs,
300-1300 nm) were used as light sources, whose intensities
were carefully calibrated before measurement by using a power
meter (Thorlabs GmbH., PM 100D).
The photon absorption of Si pyramid arrays and its planar Si
counterpart was simulated by using the 2D optoelectronic
simulator Luminous of Silvaco TCAD. Average side length l=2
µm and height h=1.4 µm of the Si pyramids were used as the
structural parameters for modeling, which were extracted from
scanning electron microscope (SEM) images of the
experimental sample. For the periodic micropyrimads along the
horizontal direction, the finite difference time domain (FDTD)
method was chosen to describe the wave propagation of light
incident from the top at a 90°incident angle [12]. Perfectly
matched layer (PML) boundary conditions were applied on the
vertical direction.
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2
Fig. 2. (a) I-V curves of the device in the dark and upon illumination with
different wavelengths (light intensity: 10.3 μW/cm2). (b) I-V curves of the
device in the dark and upon 810 nm illumination in a semilogarithmic
scale. (c) The energy band diagram of the CuO/Si heterojunction upon
illumination at zero bias. (d) Spectral response of the device at zero bias
(light intensity: 10.3 μW/cm2).
III. RESULTS AND DISCUSSION
Fig. 1(a) illustrates the schematic of CuO/Si pyramids
heterojunction photodetector and the morphologies of the
as-etched Si pyramid arrays as well as the CuO/Si pyramids
hybrid structure were characterized by SEM images presented
in Fig. 1(b) and (c). As we know that the formation of Si
pyramids should be ascribed to the anisotropic wet etching of
(100) and (111) planes of Si wafer in the alkaline solution,
which leads to a 54.7o slope of the sidewall surface (inset in Fig.
1(b)) [13]. Statistical distribution reveals that the side length of
as-obtained Si pyramids ranges from 0.5 to 4.0 µm, giving an
average value of about 2.0 µm (inset in Fig. 1(b)). Therefore,
the average height of Si pyramids can be calculated to be about
1.4 m. Fig. 1(c) presents the cross-sectional SEM image of the
CuO/Si pyramids hybrid structure. Clearly, the sputtered
nanofilm tightly wraps around the surface of the Si pyramids,
which thickness is measured to be about 121 nm. Atomic force
microscope (AFM) image further reveals that the obtained
nanofilm was continuous and uniform, showing a relatively
smooth surface with the root mean square roughness of about 2
nm. The composition of the obtained nanofilm was
characterized by X-ray photoelectron spectroscopy (XPS) and
the Cu 2p core level spectrum was presented in Fig. 1(d). The
two main peaks located at 933.8 eV and 953.7 eV can be readily
indexed to Cu2p3/2 and Cu2p1/2, respectively. Meanwhile, two
high-intensity satellite peaks located at a higher binding energy
than the main Cu2p3/2 and Cu2p1/2 peaks by about 9 eV can be
observed, which are the typical characteristics of CuO phase
[14]. Hall effect measurement proved the p-type conduction,
showing the carrier concentration and Hall mobility of 1.96 ×
1011 cm-3 and 2.25 cm2 V-1 s-1, respectively.
Fig. 2(a) plots the current-voltage (I-V) curve of the CuO/Si
pyramids heterojunction photodetector in the dark and upon
illumination with different wavelengths at a fixed light
intensity (Pin=10.3 μW/cm2). The device shows a pronounced
rectifying behavior in the dark with a rectification ratio of ~102
at ±1 V. The lower rectification ratio may arise from the large
 This article has been accepted for publication in IEEE Photonics Technology Letters. This is the author's version which has not been fully edited and
content may change prior to final publication. Citation information: DOI 10.1109/LPT.2022.3205028

3
Li et al.: Light Trapping in conformal CuO/Si micropyramids heterojunction for enhanced self-powered broadband photodetection

Fig. 4. (a-c) Simulation of photo absorption rate of the Si pyramid

arrays and planar Si upon 300, 810 and 1300 nm illumination,
respectively.

Fig. 3. (a) Time response of the device at zero bias upon 810 nm light
illumination with varied light intensities. (b) Photocurrent as a function
of light intensity. (c) Responsivity and specific detectivity as a function
of light intensity at zero bias. The inset shows the noise spectral density
based on the fast Fourier transform of the dark current. (d) A single
magnified photoresponse curve at the frequency of 800 Hz to calculate
the response time. (e) Time response of the device and its planar Si
counterpart at zero bias. (f) Enlarged time response of the device upon
300 and 1300nm illumination.
tunneling current, which could be suppressed by inserting a
unipolar barrier [15]. Prominent photoresponse to incident light
with broadband wavelengths (300 nm-1300 nm) with a peak
photoresponse at 810 nm can also be observed. Significantly,
the device exhibits a remarkable photovoltaic characteristics,
showing an open-circuit voltage (VOC) of 0.17 V and a
short-circuit current (ISC) of 0.26 µA upon 810 nm illumination
(Fig. 2(b)). The photovoltaic characteristic could be understood
by the energy band diagram shown in Fig. 2(c). Owing to the
difference in work function, a built-in electric field with the
direction from n-Si to p-CuO could be formed at the
heterojunction interface. Upon illumination, the
photo-generated carriers generated within or near the depletion
region would be immediately separated toward opposite
directions, leading to a photocurrent in the circuit [16]. This
photovoltaic behavior of the CuO/Si pyramids heterojunction
enables its application as a self-powered photodetector, which
can work without external electrical power supply.
Responsivity (R) of the device at zero bias was calculated
according to the equation R=(Ilight-Idark)/(S Pin) [17] and plotted
in Fig. 2(d), where Ilight and Idark were the current measured
upon light illumination and in the dark, respectively, S was the
effective device area (about 0.04 cm2 for this device).
Obviously, the CuO/Si pyramids heterojunction exhibited
significant response to incident light over the broad wavelength
range.
Time response of the device at zero bias upon 810 nm
illumination with varied light intensities was further explored.
We can observe from Fig. 3(a) that the device can be steadily
and fast switched between the “on” and “off” state and the
photocurrent monotonously increased from 70 nA to 0.51 μA
with the increase of light intensity from 5.9 μW/cm2 to 38.2
mW/cm2. The photocurrent as a function of light density was
fitted by the power law Iph∝P, giving the exponent  of 0.37
(Fig. 3(b)). The non-integer exponent  suggests the existence
of recombination loss in the device, which may be inhibited by
depositing an ultrathin Al2O3 layer for passivation [ 18 ].
Furthermore, the other key parameter of the photodetector,
specific detectivity (D*), was calculated using equations of
noise equivalent power (NEP): NEP= /R and
D*=(SΔf)1/2/NEP [19], and plotted in Fig. 3(c), where
was the root-mean-square value of the noise current and Δf was
the bandwidth. As presented in the inset of Fig. 3(c), the noise
spectral density at 1 Hz bandwidth was deduced to be about
4.7×10−13 A/Hz1/2 from the fast Fourier transform (FFT) of the
dark current. R and D* increased with decreasing light intensity,
and reach the highest value of 279 mA/W and 1.18 ×1011 Jones,
respectively, at the weak light intensity of 5.9 μW/cm2. This is
reasonable since the recombination loss would be smaller at
lower light intensity due to the existence of trap states in the
depletion region [20]. Response speed of the device was further
measured at the -3 dB bandwidth of the device (about 800 Hz)
and plotted in Fig. 3(d), showing the rise/fall time of 148/393 μs,
respectively. The performance of the CuO/Si pyramids
heterojunction photodetector was comparable to that of the
previously reported CuO/Si nanowire [ 21 ] and CuO/Si
microhole [22] heterojunction photodetectors, revealing the
benign heterojunction interface. Notably, the photoresponse of
the CuO/Si pyramids heterojunction photodetector was
enhanced by at least one order of magnitude than its planar Si
counterpart over the wavelength range from 430 nm to 1300 nm
(Fig. 3(e) and 3(f)). Even in the UV region (for example, 300
nm), the photocurrent was doubled. We believe that this should
be ascribed to the enhanced absorption of the dense and random
Si micropyramids arising from the light trapping effect.

© 2022 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.See https://www.ieee.org/publications/rights/index.html for more information.
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 This article has been accepted for publication in IEEE Photonics Technology Letters. This is the author's version which has not been fully edited and
content may change prior to final publication. Citation information: DOI 10.1109/LPT.2022.3205028
Li et al.: Light Trapping in conformal CuO/Si micropyramids heterojunction for enhanced self-powered broadband photodetection
Theoretical simulation was further adopted to reveal the light
trapping effect of Si pyramids. Fig. 4(a-c) presents the
simulated photon absorption rate of the Si pyramids (left) and
its planar Si counterpart (right) upon 300, 810 and 1300 nm
illumination, respectively. It can be obviously observed that
300 nm incident light was almost absorbed in the very top
surface of Si pyramids, showing a highest photon absorption
rate in the surface, which decreases with the penetration (Fig.
4(a)). With the increase of wavelengths, the photon absorption
rate in the surface decreases and the penetration depth increases
accordingly (Fig. 4(b)). This is reasonable since Si possesses a
wavelength-dependent absorption coefficient, which declines
rapidly with the increase of wavelengths [23]. Notably, despite
of the highest photon absorption rate of 300 nm incident light in
the surface of Si pyramids, the CuO/Si pyramids heterojunction
photodetector presents a pretty low photocurrent upon 300 nm
illumination (3.04 nA, shown in Fig. 3(f)). This may be
attributed to the higher surface recombination ratio arising from
the defects and the interfacial states. For 1300 nm incident light
with photon energy lower than the bandgap of Si, the prominent
trapping effect of the Si pyramids structure also leads to a
remarkably enhanced absorption (Fig. 4(c)). This is believed to
arise from the impurities and structural defects in Si [24].
Therefore, the photon absorption of incident light in Si
pyramids overpasses that in its planar Si counterpart over the
broad wavelength range (300-1300 nm), which enhances the
light-matter interaction and results in an improved
photoresponse of Si pyramids-based devices [25].
IV. CONCLUSION
In summary, a conformal CuO/Si pyramids heterojunction
photodetector was fabricated through RF reactive magnetron
sputtering CuO nanofilm onto the dense and random Si
micropyramids. The heterojunction photodetector displayed a
prominent photovoltaic effect and functioned well as a
self-powered photodetector over the broad wavelength region
(300-1300 nm). Comparing to that of its planar Si counterpart,
the photoresponse of the CuO/Si pyramids heterojunction
photodetector was significantly enhanced, showing a peak
responsivity of 279 mA/W and a specific detectivity of 1.18×1011
Jones at zero bias upon 810 nm illumination at light intensity of
5.9 μW/cm2. Theoretical simulation of photon absorption in Si
pyramid structures proved that the light-matter interaction in the
heterojunction was enhanced by the prominent light trapping
effect of the pyramid structures, giving rise to an improved
photoresponse. This provides a facile and effective strategy for
the high performance Si-based photodetectors.
REFERENCES
[1] R. Ghalamboland, S. Darbari, M. Rashidifar, and Y. Abdi, “MoS2/Si-based
heterojunction bipolar transistor as a broad band and high sensitivity
photodetector,” IEEE Sens. J., vol. 21, no. 13, pp. 14784-14788, Jul. 2021,
doi: 10.1109/JSEN.2021.3074380.
[2] S. Chhajed, M. F. Schubert, J. K. Kim, and E. F. Schubert, “Nanostructured
multilayer graded-index antireflection coating for Si solar cells with
broadband and omnidirectional characteristics,” Appl. Phys. Lett., vol. 93,
no. 25, Dec. 2008, Art. no. 251108, doi: 10.1063/1.3050463.
[3] Y. Sha et al., “High-efficiency SiGe/Si heterojunction phototransistor with
photon- trapping nanoholes operating at 600-1000 nm wavelength,” IEEE
Trans. Electron Dev., vol. 69, no. 5, pp. 2514-2520, May 2022, doi:
10.1109/TED.2022.3162801.
© 2022 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.See https://www.ieee.org/publications/rights/index.html for more information.
Authorized licensed use limited to: HEFEI UNIVERSITY OF TECHNOLOGY. Downloaded on September 18,2022 at 08:03:32 UTC from IEEE Xplore. Restrictions apply.
4
[4] J. Mao et al., “Conformal MoS2/silicon nanowire array heterojunction with
enhanced light trapping and effective interface passivation for ultraweak
infrared light detection,” Adv. Funct. Mater., vol. 32, no. 11, Mar. 2022,
Art. no. 2108174, doi: 10.1002/adfm.202108174.
[ 5 ] D. Wu et al., “A defect-induced broadband photodetector based on
WS2/pyramid Si 2D/3D mixed-dimensional heterojunction with a light
confinement effect,” Nanoscale, vol. 13, no. 31, pp. 13550-13557, 2021,
doi: 10.1039/D1NR03243G.
[6] H.-J. Syu, H.-C. Chuang, M.-J. Lin, C.-C. Cheng, P.-J. Huang, and C.-F. Lin,
“Ultra-broadband photoresponse of localized surface plasmon resonance
from Si-based pyramid structures,” Photonics Res., vol. 7, no. 10, Oct.
2019, Art. no. 1119, doi: 10.1364/PRJ.7.001119.
[ 7 ] H.-Y. Chen et al., “Enhanced photovoltaic performance of inverted
pyramid-based nanostructured black-silicon solar cells passivated by an
atomic-layer-deposited Al2O3 layer,” Nanoscale, vol. 7, no. 37, pp.
15142-15148, 2015, doi: 10.1039/C5NR03353E.
[ 8 ] R. Saive, “Light trapping in thin silicon solar cells: A review on
fundamentals and technologies,” Prog. Photovoltaics, vol. 29, no. 10, pp.
1125-1137, Oct. 2021, doi: 10.1002/pip.3440.
[9] R. P. Srivastava and D. Khang, “Structuring of Si into multiple scales by
metal‐assisted chemical etching,” Adv. Mater., vol. 33, no. 47, Nov. 2021,
Art. no. 2005932, doi: 10.1002/adma.202005932.
[10] Q. Chen et al., “Optical properties of a random inverted pyramid textured
silicon surface studied by the ray tracing method,” Sol. Energy, vol. 186,
pp. 392-397, Jul. 2019, doi: 10.1016/j.solener.2019.05.031.
[11] J. Li et al., “Effects of oxygen flow rates on the physical characteristics of
magnetron sputtered CuO films,” Vacuum, vol. 168, Oct. 2019, Art. no.
108811, doi: 10.1016/j.vacuum.2019.108811.
[12] ATLAS User’s Manual, Device Simulation Software, SILVACO Int., Santa
Clara, CA, USA, 2018.
[ 13 ] J. Wu et al., “The orientation and optical properties of
inverted-pyramid-like structures on multi-crystalline silicon textured by
Cu-assisted chemical etching,” Sol. Energy, vol. 171, pp. 675-680, Sep.
2018, doi: 10.1016/j.solener.2018.07.011.
[14] Handbook of X-ray Photoelectron Spectroscopy, Perkin-Elmer Corp.,
Eden Prairie, MN, USA, 1992.
[15] Y. Chen et al., “Unipolar barrier photodetectors based on van der Waals
heterostructures,” Nat. Electron., vol. 4, no. 5, pp. 357-363, May 2021, doi:
10.1038/s41928-021-00586-w.
[16] Q. Lv, F. Yan, X. Wei, and K. Wang, “High-performance, self-driven
photodetector based on Graphene sandwiched GaSe/WS2
Heterojunction,” Adv. Opt. Mater., vol. 6, no. 2, Jan. 2018, Art. no.
1700490, doi: 10.1002/adom.201700490.
[17] J.-M. Liu, Photonic devices, Cambridge University Press, Cambridge, UK,
2009.
[18] M. Garin et al., “Black-silicon ultraviolet photodiodes achieve external
quantum efficiency above 130%,” Phys. Rev. Lett., vol. 125, no. 11, Sep.
2020, Art. no. 117702, doi: 10.1103/PhysRevLett.125.117702.
[19] P. Wu et al., “Van der Waals two-color infrared photodetector,” Light-Sci.
Appl., vol. 11, no. 1, Dec. 2022, Art. no. 6, doi:
10.1038/s41377-021-00694-4.
[20] K. S. Kim et al., “Ultrasensitive MoS2 photodetector by serial nano-bridge
multi-heterojunction,” Nat Commun., vol. 10, no. 1, Dec. 2019, Art. no.
4701, doi: 10.1038/s41467-019-12592-w.
[21] Q. Hong, Y. Cao, J. Xu, H. Lu, J. He, and J.-L. Sun, “Self-powered
ultrafast broadband photodetector based on p-n heterojunctions of CuO/Si
nanowire array,” ACS Appl. Mater. Interfaces, vol. 6, no. 23, pp.
20887-20894, Dec. 2014, doi: 10.1021/am5054338.
[22] C. Zhang et al., “Enhanced light trapping in conformal CuO/Si microholes
array heterojunction for self-powered broadband photodetection,” IEEE
Electron Device Lett., vol. 42, no. 6, pp. 883-886, Jun. 2021, doi:
10.1109/LED.2021.3072042.
[23] C.-Y. Tsai, “Interband and intraband absorption coefficients of silicon:
Theoretical frameworks and formulations,” IEEE J. Sel. Top. Quantum
Electron, vol. 26, no. 2, pp. 1-10, Mar. 2020, doi:
10.1109/JSTQE.2019.2943389.
[ 24 ] S. Huang et al., “Black silicon photodetector with excellent
comprehensive properties by rapid thermal annealing and hydrogenated
surface passivation,” Adv. Opt. Mater., vol. 8, no. 7, Apr. 2020, Art. no.
1901808 doi: 10.1002/adom.201901808.
[25] E. Garnett and P. Yang, “Light trapping in silicon nanowire solar cells,”
Nano Lett., vol. 10, no. 3, pp. 1082-1087, Mar. 2010, doi:
10.1021/nl100161z.