LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCC Supply voltage − -50 V

VIN Input voltage -12 +5 V

IO − -100
DC Output current mA
IC(Max.) − -100

PTOT Total power dissipation Tamb ≤ 25 OC, Note 1 − 300 mW

−55 +150
O
TSTG Storage temperature
C
−
O
TJ Junction temperature 150
C
−
O
RθJ-S Thermal resistance junction - soldering point 140
C/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004-04
 RATING CHARACTERISTIC ( CHIMB10PT )

CHARACTERISTICS

Tamb = 25 °C unless otherwise speciÞed.

SY PARAMETER CONDITIONS M T M UN
MB IN Y A IT
OL . P. X
.
VIoff) Input off voltage IO=-100uA; VCC=- - − − V
5.0V 0
.
5
VI(on) Input on voltage IO=-5.0mA; VO=-0.3V − − - V
1.
1
VO(on) Output voltage IO=-5mA; II=-0.25mA − - - V
0. 0.
1 3
II Input current VI=-5V − − - m
3. A
6
IC(off) Output current VI=0V; VCC=-50V − − - uA
0.
5
hFE DC current gain IO=-10mA; VO=-5.0V 8 − −
0
R1 Input resistor 1.
5 2.2 2. KΩ
4 86
R2/R1 Resistor ratio 1 2
7 1 26
fT Transition frequency IC=-5mA, VCE=- − 2 − M
10.0V f=100= 5 Hz
MHz 0
Note
1.Pulse test: tp≤300uS; δ≤0.02.

RATING CHARACTERISTIC CURVES ( CHIMB10PT )

 Typical Electrical Characteristics

Fig.1 Input voltage vs. output current Fig.2 Output current vs. input voltage
(ON characteristics) (OFF characteristics)

−10
0 VO=−0.3V
)V −5
()n 0
o −2
(
VI 0
−1
:E
0
G −5
A Ta =−40°C
T
L −2 25°C
O 100°C
V
−1
T
U −50m
P
N 0
I −20m
−0
10m
0
−100µ −200µ −500µ−1m −2m−5m −10m −20m −50m −100m 0 −0.5 −1.0 −1.5 −2.0 −2.5 −3.0

OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(off) (V)

Fig.3 DC current gain vs. output Fig.4 Output voltage vs. output current current
1k
VO=−5V
500
G I Ta =100°C
200 25°C
:N −40°C
IA 100
G
T 50
N
E
R 20
R
U 10
C
C 5
D
2
1

−100µ−200µ −500µ −1m −2m −5m −10m −20m −50m−100m−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m −100m

OUTPUT CURRENT : IO (A) OUTPUT CURRENT : IO (A)