DIGITAL ASSIGNMENT 2

MARKS: 10
ELECTRONIC MATERIALS AND DEVICES (BECE201L) SLOT :W21+W22+Z21
1. Derive the Continuity Equation for Electrons.

2. Assume that, in an n-type gallium arsenide semiconductor at T=300 K, the electron

concentration varies linearly from 15× 1020 to 3×1017 cm-3 over a distance of 0.15 cm.
Calculate the diffusion current density and the mobility, if the electron diffusion coefficient
is Dn= 225 cm2/s.

3. Consider an ideal n-channel MOSFET with parameters L = 1.25 µm, µn = 650 cm2 /V-s,
Cox = 6.9 × 10-8 F/cm2, and VT = 0.65 V. Design the channel width W such that ID (sat) = 4
mA for VGS = 5 V.

4. The electronic polarizability of Ar atom, having an atomic mass of 39.95, is 1.7 × 10 -40
Fm2. What is the static dielectric constant of solid Ar if its density is 1.8 gcm-3.

5. A typical 1 MHz quartz crystal has following properties:

fs= 1 MHz, fa= 1.0025 MHz, Co= 5 pF, R= 20 ohm
Determine the inductance and capacitance in the equivalent circuit of crystal. Find the
Quality Factor.

6. A PN junction has Na = 10 19 cm –3 and Nd = 10 16 cm –3 .With V = 0, what are the minority

carrier densities at the depletion region edges?

7. A P + N junction has Na = 10 20 cm -3 and Nd = 10 17 cm –3 . What is (a) the built-in potential,

(b) W dep , (c) XN , and (d) XP ?

8. Consider an ideal pn junction diode at T= 300 K operating in the forward-bias region.

Calculate the change in diode voltage that will cause a factor of 10 increase in current.

9. Explain the small-signal model of a Bipolar Junction Transistor (BJT) in brief. How does
this model aid in analyzing in determining voltage gain and input/output impedance?

10. In the following circuit, find the unknown variables:

11. (a) Consider a Schottky junction diode between Au and n-Si, doped with 1016 donors cm–
3. The cross-sectional area is 1 mm2. Given the work function of Au as 5.1 eV, determine
the theoretical barrier height, ΦB, from the metal to the semiconductor. Assume T=300K
and

(b) Given that the experimental barrier height ΦB is about 0.8 eV, determine the reverse
saturation current and the current when there is a forward bias of 0.3 V across the
Schottky diode?