1992 Mitsubishi Optical Semiconductor Devices

MITSUBISHI <lioliolYl
OPTOELECTRONICS UCUCU~
OPTICAL SEMICONDUCTOR
DEVICES and
OPTICAL-FIBER
COMMUNICATION SYSTEMS
o
~
J7
QCI
COMPONENT SALES
2216 O'Toole Avenue
San Jose, CA 95131
o
Phone (408j 432-1070
, MITSUBISHI
A "-ELECTRIC
MITSUBISHI
OPTOELECTRONICS
OPTICAL SEMICONDUCTOR
DEVICES and
OPTICAL·FIBER
COMMUNICATION SYSTEMS
o
~
J7
OJ
o
o , . MITSUBISHI
A . . . . ELECTRIC
All values shown in this catalogue are subject to change for
product improvement.
The information, diagrams and all other data included
herein are believed to be correct and reliable. However, no
responsibility is assumed by Mitsubishi Electric Corporation
for their use, nor for any infringements of patents or other
rights belonging to third parties which may result from
their use.
OPTICAL SEMICONDUCTORS COMPONENTS GUIDANCE
LASER DIODES
LIGHT EMITTING DIODES
PHOTODIODES
CANCELED PRODUCTS
OPTICAL-FIBER COMPONENTS GUIDANCE
OPTICAL-FIBER COMPONENTS DATA SHEET

MITSUBISHI OPTICAL SEMICONDUCTORS
CONTENTS
D OPTICAL SEMICONDUCTORS COMPONENTS GUIDANCE page

Ordering Information··:········,······························· ~ .................................. 1 - 3
Application Diagram I ............................................................................ 1 - 4
Application Diagram n (pulse optical output) .................................................... 1 - 5
Index by application··············································································l - 6
Index by function ················································································1 - 8
Index by series type······························,···············································; 1 - 11
Principle of laser oscillation······································································ 1 - 12
Technical terms and characteristics······························································ 1 - 15
Measuring procedures············································································· 1 - 19
Driving circuits·····································;·············································· 1 - 34
Reliability· .......................................................' .................................. 1 - 36
Safety considerations ................................................................. " ........... 1 - 38
D LASER DIODES
ML2XX1 SERIES, ............................................................................. ··2 - 3
ML3XX1 SERIES················································································2 - 10
ML4XX2 SERIES················································································2 - 17
ML4XX2A SERIES··············································································2 - 25
ML4XX3 SERIES················································································2 - 32
ML4XX5 SERIES·······································································,········2 - 39
ML4XX10 SERIES ............................................................................ ··2 - 44
ML4XX14 SERIES ............................................................................. ··2 - 51
ML4XX15 SERIES ............................................................................ ··2 - 58
ML4XX16 SERIES' ........................................................................... ··2 - 64
ML4XX19 SERIES··············································································2 - 71
ML5XX1A SERIES················ ............................................................. ··2 - 73
ML5XX3A SERIES······················································· ..······················2 - 80
ML5XX4 SERIES'" ......................... '.................................................. ··2 - 87
ML5XX5 SERIES'" ........................................................................... ··2 - 93
ML6XX1A SERIES····················· .. ·······················································2 - 100
M L6XX3A SERIES' ...................... : ...................................................... 2 - 108
ML6XX10 SERIES···· ·,·········································································2 - 114
ML6XX11 SERIES ...................................................... ························2 -121
ML6XX14 SERIES············ .. ·································································2 - 128
ML7XX1 SERIES················································································2 - 130
ML7XX1ASERIES· ........ · ...... ··· .......... ··· .. : .............. ·· .... · .... · .... ········ .... ·2-138
ML7XX2 SERIES················································································2 - 143
ML7XX3 SERIES················································································2 - 149
ML7XX5, SERIES················································································2 - 152
ML8XX1 SERIES················································································2 - 154
ML9XX1 SERIES················································································2 - 160
ML9XX1A SERIES········ ............................................................ : ....... ··2 - 166
• MITSUBISHI
"'ELECTRIC
CONTENTS
page
ML9XX2 SERIES················································································2 - 171
ML9XX3 SERIES················································································2 - 177
ML9XX5 SERIES················································································2 - 180
D LIGHT EMITTING DIODES

ME1XX3 SERIES ...................................................... ·························3 - 3
ME1XX4 SERIES···············································································3 - 8
ME7XX2 SERIES ............................................................................... 3 - 12
. . PHOTODIODES
PD2XX1 SERIES················································································ 4 - 3
PD1XX2 SERIES················································································4 - 5
PD1XX5 SERIES" ......................................................................... ·····4 - 9
PD7XX5 SERIES················································································4 - 13
PD7XX6 SERIES················································································4 - 17
PD7XX7 SERIES················································································4- 21
PD8XX2 SERIES················································································4 - 25
g CANCELED PRODUCTS
PRODUCTS TO BE DISCOUNTINUED····· .................................................. 5 - 3
II OPTICAL-FIBER COMPONENTS GUIDANCE

LIST OF PRODUCTS·········································································· 6 - 3
MAP OF PRODUCTS·········································································· 6 - 6
PRODUCT DESIGNATION CODE······························································ 6 - 7
METHOD FOR ORDERING THAN STANDARD PRODUCTS ................................. 6 - 7
SAFETY CONSIDERAITON FOR LD MODULE ............................................... 6 - 8
MEASURING PROCEDURES FOR OPTOELECTRONIC COMPONENTS······················ 6 - 9
D OPTICAL-FIBER COMPONENTS DATA SHEET

LD Module for Singlemode Fiber (Receptacle Type)
FU-G11SLD-N2················································································ 7 - 3
FU-16SLD-N1 .......................................................................... , ...... 7 - 5
FU-16SLD-N3 ................................ ~ ............................................... , 7 - 8
FU-17SLD-N1 ................................................................................. 7 - 5
FU-17SLD-N3 ................................................................................. 7 - 8
LD Module for Singlemode Fiber (Coaxial Type)
FU-411SLD'" ................................................................... ··············7 - 11
FU-411SLD-20 ...................................................... ··························7 - 14
FU-611SLD ...................................................... ······························7 - 16
FU-611SLD-15 ...................................................... ··························7-19
'. .. MITSUBI$HI
..... ELECTRIC·
CONTENTS
page
LD Module for Singlemode Fiber (DIP TypelButterfly Type)
FU-43SLD-1 ...................................................... ················:············7 - 21
FU-43SLD-2 ...................................................................................7 - 24
FU-44SLD-1 ...................................................................'................ 7 - 27
FU-44SLD-7 ................................................................................... 7 - 30
FU-45SLD" .................................................................................. ··7 - 33
FU-64SLD-1 ···················································································7 - 36
FU-64SLD-7 ···················································································7 - 39
DFB-LD Module for Singlemode Fiber (DIP Type/Butterfly Type)
FU-41SDF·················· .................................................................. ··7 - 42
FU-44SDF··············· , .............................. '...................................... ··7 - 42
FU-45SDF-38 ..................................................................................7 - 45
FU-45SDF-4 ...................................................................................7 - 48
FU-48SDF-1 ······················ .. ···························································7 - 51
FU-61SDF···························· .... ····!·················································7 - 54
FU-64SDF'" ......,......................................................... ······· .... ·········7 - 54
FU-65SDF-3 .......................................................................... , ........ 7 - 57
FU-65SDF-4 .......................................................... , ........................ 7 - 60
FU-68SDF-2 .........,.......................................................................... 7 - 63
LD Module for Multimode Fiber
FU-01 LD-N (0.78) .............................................................................7 - 66
FU-27LD (0.78)···································································· ············7 - 66
FU-01 LD-N (0.85) ............................................... '.............................. 7 - 69
FU-27LD (0.85) ................................................................................ 7 - 69
FU-23LD .......................................................................................7 - 72
FU-11LD-N·················· .......................................... ·························7 - 75
FU-33LD ·························· .. ··········· .. ······························· .. · .. ··········7 - 77
LED Module
FU-02LE-N ..................................................................................... 7 - 80
FU-23LE ...................................................................,.................... 7 - 80
FU-13LE-N····· ............................................................... ·················7 - 83
FU-34LE ....................................................................................... 7 - 83
PO Module
FU-04PD-N .................................................................................... 7 - 86
FU-21PD .................... , ................................................................ ··7 - 86
FU-15PD-N ·········································································,··········7 - 89
FU-16PD-N ................................................................... ',' .............. ·7 - 89 ,
FU-35PD ..................................................................................... ··7 - 91
" ' MITSUBISHI

...... ELECTRIC
CONTENTS
page
APD Module
FU..QSAP-N ....................................................................................7 - 94
FU-2SAP .......................................................................................7 - 94
FU-12AP-N ······················································ .. ·········· .. ················7 - 97
FU-32AP .......................................................................................7 - 97
FU-13AP-N ..................... ·······························································7 - 100
FU-310Ap····································································:·················7 - 102
Digital-Optical Transceiver Module (3R Type)
MF-12SDS-TR113..Q06······ .. · .. ············ .. ············· .. ··········· .. ···················7 - 105
MF-1S6DS-TR124..Q02/003· .. ·· .. ······································· .. ···················7 - 108
MF-622DF-T12..Q07-011 ......................................................................7 - 11 2
MF-622DS-R13..Q02, R14..Q02/003 ........................................................... 7 - 115
Digital-Optical Transceiver Module (2R Type)
MF-20DF-TR014..Q02 ............................................................... ··········7 - 117
MF-32DF-T01/R03········· .. ······························ .. ············ .. ·· .. ···············7 - 119
Optical-fiber connector
FC..Q1 PN-{L)-SMF ..............................................................................7 - 121
FC..Q1 PNW-(L)-SMF ....... , .................................................................. 7 - 121
FC..Q1 PN-{L)·PC-SMF ........................................................................7 - 1 21
FC..Q1PNW-{L)·PC-SMF······································································7 - 121
FC..Q1PN-{L)·SPC-SMF········· .. ...........................,............................... ··7 - 121
FC..Q1 PNW-{L)·SPC-SMF ............................ ; ....................................... 7 - 121
FC..Q1 PN-{L) ...................................................................................7 - 123
FC..Q1 PNW-(L)' ................................................................................7 - 123
FC..Q1 PN-{L)·PC· ..............................................................................7 - 123
FC..Q1 PNW-{L)·PC ............................................................................7 - 123
FC..Q1 PN-{L)·SPC .............................................................................7 - 123
FC..Q1 PNW-(L)·SPC· ..........................................................................7 - 123
FC..Q1 RN (S) ...................................................................................7 - 1 21
FC..Q1 RN .......................................................................................7 - 123
Contact Addresses for Further Information
• MITSUBISHI
. . . . ELECTRIC
OPTICAL SEMICONDUCTORS COMPONENTS GUIDANCE
ORDERING INFORMATION
Ordering Information
Device type {ML : Laser diode

ME : Light emitting diode
PD : Photodiode
L - - t - - + - + - - - - - - - - - Wavelength code* 2
L--I-I_ _ _ _ _ _ _ _ _ Package type (old = 2digits. new = 3digits)
*1
' - i c - - - - - - - - - Chip series No.
L-_ _ _- -____ Pin connectiori' 3
( fixed only to the monitor PD)
incorporated laser diode
* 1 Applicable from Jan. 1991.

* 2 Wavelength code classification
Device type Wavelength code Wavelength range (nm) Device type Wavelength code Wavelength range (nm)
2 1 700 <A :10900
ME
3 800 <A :10900 7 1250 <71.:101400
5 1 500 <A :10900
4 2
ML 700 <A :10800 PO
6 7 1000 <71.:101600
7 1250 <71.:101400 8
8 900 < A S; 1250
9 1400 <A
* 3 Pin
1 1 f1
connection (for Laser)
PO
fi II
S
N type
temII fitem
II
LO PO
II fitem
II
S
II
C type
LO PO S
R type
LO. PO
II
S
Ftype
ftem·
II
LO PO
II
S
E type
f· StIIem
LO PO
stem
II
S
S type
II
LD
( LD : Anode Common ) (LO ,. Cathode Common\ ( LO : Cathode common) ( LO : Anode Common ) ( LO : Cathode common) ( LD : Floating
PO : Cathode Common PO : Cathode Common) PO: Anode Common PO : Floating PO : Floating PO : Floating )
• MITSUBISHI
. . . . ELECTRIC 1- 3
APPLICATION DIAGRAM I
Application Diagram
Laser Diode (LD)
(***
New pmduct
Under development
)
Light Emitting Diode (LED)
,
50
/
AIGaAs
/
InGaAsP
[J '
"•• " ML9XX4**
20 ..... 1_~--1 ML5XX4
....
~ 10 Optical Disk Memory
o WORM ) ML9XX3
CL Rewritable
Laser Printer (High speed) ML9XX1A
(IJ
o ML6XX3A
+'
g 5 ~ML4XX5
Po(mW) POS
CW
ML4XX2 ML9XXl
ML4XX2A ML9XX2
ML4XX3 ML9XX5*
2 ML4XX10
ML4XX14
ML4XX15
ML4XX16
ML4XX19*
~::',::'
"y';'~
LED
Optical communication
LED
ME7XX2
CD,VD ME1XX3
CD- V,CD- ROM ME1XX4
Laser Printer
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7
Wavelength Ap(,um)
High Responsivity Photodiode (pinPD. APD)
< Si-pinPD
PD2XXl X InGaAs- 'pinPO
PD7XX5
PD7XX6
:>
< X
P07xxr
Si-APO
PD1XX2
PD1XX5
InGaAs-APO
PD8XX2' :>
" "IVIITSUBISHI
1- 4 "'ELECTRIC
APPLICATION DIAGRAM IT
(PULSE OPTICAL OUTPUT)
Application Diagram
Laser diodes for OTDR applications
InGaAsP
/ 200 \
200 -r-
....::J
a. ML7XX3
:; 150 -I-
o
rou
..,a.
.
o 120
Q)
rJ)
"S
c... 100
Po (p) 100 -I- AIGaAs
(mW) / \ ML9XX3
80
ML5XX4
50 -I-
40
ML7XX1A
ML9XX1 A
I I
o I I I I I I I
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
Wavelength A P (/J. m)
ML5XX4 ......................... Pulse width 2 fJ. s, duty 0.2 %
ML7XX1A}
ML7XX3 ......................... Pulse width less than 1 fJ. s duty less than 1 %
ML9XX1A '
ML9XX3
.• MITSUBISHI
. . . . ELECTRIC 1-5
INDEX BY APPLICATION
Index by Application
[Application] [Main use] [ Wavelength] [ Rated optical output ] [ Series name ]

typo (nm) (Forward current) (Features· Structure)
ML4XX3 (low droop)
Po=5mW ML4XX14 (low droop. small dispersion)
Po= BmW ML4XX 19* (":!ediuf!! output. small

dis rSlon
Po= 15mW ML6XX3A (higher output, for high- spee
machine)
ML5XX4 (pulse high output operation)
ML7XX1 A (pulse high output operation)
Information ML7XX3 (pulse high output operation)

processing &
instrumentation ML9XX1 A (pulse high output operation)
ML9XX3 (pulse high output. operation)
Po= 5mW ML4XX5 (shortwave length)
Po= 5mW ML4XX15 (read only)
Po = 20mW ML6XX1 A (for mass-produced machine)
ML6XX 10 (small dispersion)

Po= 35mW
ML6XX 11 (low lop, small dispersion)
Po = 60mW ML6XX14** (low lop)
Po= 25mW ML5XX3A (for mass-produced machine)
Po= 35mW ML5XX5 (small dispersion)
*** ::New product

Under development
• . MITSUBISHI
1- 6 .... ElECTRIC
MITSUBISHI OPTICAL SEMICON.DUCTORS
INDEX BY APPLICATION
Index by Application
[Application] [Main use] [Wavelength] [Rated optical output] [ Series name ]

typ.(nm) (Forward current) (Features' Structure)
ML4XX10(higher reliability, multi-mode)

Po=5mW
ML4XX1S( higher reliability, pulsation)
Po= 3.5mW ML3XXl (higher reliability)
Po= 10mW ML2XXl (higher reliability)
ME' XX3 (AIGaAs- LED, t/J '00 It miens)

(If = 75mA)
ME'XX4 (AIGaAs- LED, t/J 200 It miens)
Po=6mW ML8XXl (high-temperature operation,

FP-LD)
ML7XXl (high-temperature operation.
ML7XXS** FP- LD)
Po=6mW
ML7XX2 (for digital use, DFB-LD)
Po= .12mW ML7XX5 (for analog use, DFB-LD)
(If = 120mA) ME7XX2 <lnGaAsP LED)
ML9XXl (high-temperature use,

FP- LD)
Po=SmW
ML9XX2 (for digital use, DFB-LD)
Po= 12mW ML9XX5* '(for analog use, DFB- LD)
PD1XX2 (t/l200 It m Si-APD)
PD1XX5 (t/J 500 It m Si-APD)
PD2XXl (0500 It m Si-pinPD)
PD7XX5 (t/l80 It m lnGaAs- pinPD)
l000-lS00 PD7XXS (t/l300 It m InGaAs-pinPD)
PD7XX7* (t/l40 It m InGaAs- pinPD)
PD8XX2* (t/l50 It m InGaAs- APD)
r---t._l~480~~--------""i ML9XX4**(high power, high reliability)

'--------'
*** ::New product

Under development
1-7
INDEX BY FUNCTION
Mitsubishi laser diodes are high- performance light sources that offer extremely stable single
• AIGaAs Laser Diodes' -mode oscillation with a .Iow threshold current. Hi~h ~e'iab!'ity a~d long-service life m~ke these
• devices sUitable for use In a broad range of applications. Including such areas as optical com-
munications and optical data processing.
1Ylil$ ,
;;;:
Material
j
'. -·~I1f~~~;·f;i/':i;·I;'1~}., .~' .. ~~

POPQl!!, lTc' .rTo ; t i Q . . :;: ;[,'i, .oj; .C
(~. '. i~~~ r. (;C~ .. ' (~)" ",.. r.. Wp;· .M.X: rtypjMaj<;.IT~ Ma!<; •• Mi~.: '1';'iIX IMali.:ii;~;.; ~
ML2XX1 AIGaAs 10 15 - -
- 40
+ 70
- 55
+ 100
8 30 50 55 90 1.. 8 2.5 830 850 870 12 35 0.3 0.8 2.0
-40 - 55
ML3XX1 AIGaAs 3.5 6 - -
+ 60 + 100
3 20 40 30 50 1.8 2.5 830 850 870 11 30 0.1 0.3 0.7
- -
-40 - 55
ML4XX2 AIGaAs 5 6 3 30 60 40 70 1.8 2.5 765 780 795 11 33 0.15 0.35 0.7
+ 60 + 100
ML4XX2A AIGaAs 5 6 - -
-40
. + 60
- 55
+ 100
3 40 60 50 70 1.8 2.5 765 780 795 11 33 0.15 0.4 0.7
-40 - 55
+ 60 + 100
3 35 60 50 85 1.8 2.5 765 780 795 11 33 0.4 1.0 2.0
-40
+ 60
- 55
+ 100
3 35 70 45 80 2.0 3.0 735 750 765 11 33 0.15 0.35 0.7
-40
+60
- 55
+ 100
3 45 60 53 70 1.8 2.5 765 780 800 11 33 0.15 0.4 0.7
- -
- 40 - 55
ML4XX14 AIGaAs 5 6 3 30 50 50 70 2.0 2.5 765 780 795 11 33 0.25 1.0 2.0
+ 60 + 100
-40
+ 60
- 55
+ 100
3 45 60 58 70 1.8 2.5 765 780 795 11 38 0.15 0.35 0.7
-40
+ 60
- 55
+ 100
3 45 70 55 80 1.8 2.5 765 780 800 11 38 0.15 0.4 0.7
- 40 ~ 55
ML4XX19* AIGaAs 8 - - -
+ 60 + 100
5 30 50 45 70 2.0 2.5 765 780 795 11 33 0.3 0.7 1.7
- -
- 40 - 55
ML5XX1A AIGaAs 18 30 15 30 50 60 90 1.8 2.5 830 850 870 11 30 0.5 1.0 3.0
+ 50 + 100
-40 ~
ML5XX3A AIGaAs 25 - - -
+ 60
55
+ 100
10 40 60 65 100 2.0 2.5 800 820 840 12 30 0.3 0.8 1.7
ML5XX4 AIGaAs 20 '*2

450 - -
40
+ 50
55
+ 100
15 25 50 50 90 1.8 2.5
.
830 850 870 11 30 0.04 0.12 1.0
- 40
+ 60
- 55
+ 100
30 50 70 125 150 2.0 2.5 810 825 840 11 26 2.0 4.0 6.0
- 40 - 55
ML6XX1A AlGa As 20 25 -
+ 60
-
+ 100
10 40 60 65 100 2.0 2.5 765 780 795 12 30 0.3 0.8 1.7
-40 - 55
ML6XX3A AIGaAs 15 - -
+ 60
-
+ 100
10 40 60 65 100 2.0 2.5 765 780 795 12 30 0.3 0.8 1.7
-40 - 55
ML6XX10 AIGaAs 35 4~ -
+ 60
-
+ 100
30 70 85 140 160 2.0 2.5 770 785 800 10.5 26.5 1.0 3.0 6.0
ML6XX11 AIGaAs 35 4,5

- 40
-
+ 60
-
- 55
+ 100
30 60 75 120 135 2.0 2.5 770 785 800 10.5 26.5 - 0.9 -
- 40 - 55
ML6XX14** AIGaAs 60 70 -
+ 60
-
+ 100
50 55 - 135 - 2.0 2.5 770 785 800 9.5 25 - 0.3 -
'* 1 : Duty less than 50 %. pulse Width less than 1 11 s. '* 2 : Forward current max. rating. duty = 1 %. pulse Width less than 4 11 s.
'* 3 : 1m value depends on package type.
*: New Product ** :Under development
. 'MITSUBISHI
1- 8 . . . . ELECTRIC
INDEX BY FUNCTION
• InGaAsP Laser Diodes

SMSR
M~ Ratings' It.. lop Vop , ~p (J~ 8.l 1m lI!$'
@Po
Po : @PO (rnA:) (rnA)' .(V) (nm) (d,;) (dog1 (rnA}
1'ype Material I~Oll!l Te , TstQ (mW) (OS)
ow P,ui$' ('OJ ('C) M&~., Min.' Typ.
, ',c, (mW) (mW), Tyo~ 0.1... T)'!). 0.1.... Tv," Me.. Min. Typ. 0.10.. Ty.. Typ. MI.,. Tm
- -
-20 -40
ML7XX1 InGaAsP 10 10 5 10 30 25 50 1.2 I.S 1280 1300 1330 25 30 0.2 0.5 - - -
+ 70 + 100
ML7XX1A InGaAsP 30
lI!2
400mA - -
-20
+50
-40
+ 100
25 10 30 70 130 1.5 2.0 1280 1310 1330 25 30 0.2 0.5 - - -
0 -40
ML7XX2
lnGaAsP
(DFB laser)
6 - -
+SO
-
+ 100
5 15 40 30 80 1.2 1.8 - 1310 - 25 30 0,1 0.25 - 30 40
ML7XX3 InGaAsP 30
lI!2
900mA - -
+20
.;. 30
-40
+ 100
25 20 50 80 150 1.5 2.0 1280 1310 1330 25 30 0.1 0.2 - - -
- -
+20 -40
InGaAsP
ML7XX5 (DFB laser)
20 - 10 15 40 45 80 1.2 1.8 - 1310 - 25 30 - - - 30 40
+ 30 + 100
ML7XX6** InGaAsP Not specified (under development)
ML8XX1 lnGaAsP 6 10 - -
-20
+70
-40
+ 100
5 15 30 30 SO 1.2 1.S 1180 1200 1230 25 30 0.2 0.5 - - -
ML9XX1 InGaAsP 6 10 - -
-20
+SO
-40
+100
5 15 35 40 SO 1.3 1.7 1520 1550 1580 30 35 0.2 0.5 - - -
ML9XX1A InGaAsP 20 400mA

lI!2
+ 50 HOO
- -
-20 . -40
15 15 35 75 120 1.5 2.0 1520 1550 1580 30 35 0.1 0.3 - - -
- -
0 -40
InGaAsP
ML9XX2 (DFB laser)
6 - 5 20 40 45 90 1.2 1.8 - 1550 - 30 35 0.1 0.25 - 30 40
+ SO + 100
+ 20 40
ML9XX3 InGaAsP 30 900mA
lI!2
+ 30 + 100
- - 25 25 50 120 180 1.5 2.0 1520 1550 1580 30 35 0.1 0.3 - - -
ML9XX4** InGaAsP Not specified (under development)
- -
+ 20 -40
InGaAsP
ML9XX5* (DFB laser)
20 - 10 20 40 45 90 1.2 1.8 - 1550 - 30 35 - - - 30 40
+ 30 + 100
* 1 : Duty less than 50 %. pulse width less than 1 ~ s
* 2 : Forward current max. rating. duty; 1 %, pulse width less than 1 J1 s * 3 : 1m value depends on package type
*: New product ** :Under development

The Mitsubishi communication LEOs are high - performance optical sources which provide wide modulation band
• LEOs width, optical output with excellent linearity, high coupling efficiency, high reliability, and long service Me.
'Max. Ratings
@i. "P
(nm)
t.A;
(nm)
PocbC)
(mW)
P<:><i>"1so) lI!1
lRF
fo (MHz)
~ufJ)
IF (00) (mW) =-4mAp~p
Typef M~terial : @-Tc;ii'50-o
Te Tstg (mA)
",'
. (rnA) @fr:l'j'"P , ('C) ('C) Min. Max. Typ. "Ai;". ,TyP. -Min. Max. Min . Typ;
-40
ME1XX3 AIGaAs 75 120
+ 100
- -
- 55
+ 125
50 '820 880 45 1.0 1.5 2.0 3.0 15 30
-40 -55
ME1XX4 AIGaAs 75 120
+ 100
- -
+ 125
50 820 880 45 0.5 1.5 1.0 3.0 10 30
-40
ME7XX2 InGaAsP 120 -
- 30
-
+80
-
+ 100
100 1280 1340 130 *2
15
*2
20
- - - 150
*1: Duty;50%,f;100kHz *2: Pf(ilW.GI 50/125 OPtIcal FIber)
• .MITSUBISHI
"ELECTRIC 1- 9
INDEX BY FUNCTION
.51 pin Photodiodes . Mitsubishi Si ~in photodiod~s ar~ high-performance oPtical detectors for standard short-
• waveband applications offering high-speed response
Mitsubishi Si avalanche photodiodes are high- performance optical detectors for

.51 Avalanche Photodiodes : short-waveband applications offering high-speed response, wide band width and
low noise
PD1XX2 Si 200 10 - .p2oo 100 150 200 0.12 1.5 2.0 0.3 1.0 0.4 0.45 1000 2
+110 +150
-40 -55
PD1XX5 Si 200 10 .p 500 100 150 200 0.12 5.0 7.0 0.3 1.0 0.4 0.45 1000 0.4
+ 110 + 150
• InGaAs pin Photodlodes . Mitsubishi InG~As. photodio~es are high-performance oPtical detectors for long-
• waveband applications offering hlgh- speed response
+80 + 100
-30 -40
PD7XX6 InGaAs 3000 2 .p300 3 15 200 0.6
+80 + 100
-30 -40
PD7XX7 * InGaAs 500 2 .p40 *1
0.3 ,
*1
1
*,1
1500
1000-1600 0.6
+80 + 100
*1:@VR=5V
Mitsubishi InGaAs avalanche photodiodes are high - performance optical

• InGaAs Avalanche Photodiodes : detectors for long-waveband applications offering high-speed response,
wide bandwidth and low noise
*: New product
• MITSUBISHI
1 - 10 ..... ELECTRIC
INDEX BY SERIES TYPE
Index by Series Type

Type Series Name Page
ML2XXl ML2701 2-3
ML3XXl ML3101 ML3411 2 -10
ML4XX2 ML4012N ML41 02 ML4402
2-17
ML4412N ML4442N
ML4XX2A ML4102A ML4402A ML4412A 2 - 25
ML4XX3 ML4403 ML4403R ML4413N
2 - 32
ML4413C
ML4XX5 ML4405 ML4445N 2 -39
ML4XX10 ML40110R 2-44
ML4XX14 ML44114N ML44114C ML44114R
2- 51
ML40114N ML40114R
AIGaAs
ML4XX15 ML40115C ML40115R 2-58
LD
ML4XX16 ML40116R 2-64
2 -71
ML4XX19
ML5XX1A * ML44119N
ML5101A
ML44119R
ML5401A 2 -73
ML5XX3A ML5413A 2-80
ML5XX4 ML5784F 2 - 87
ML5XX5 ML5415N ML5415C ML5415R 2-93
ML6XX1A ML6101A ML6411A ML6411C 2 -100
ML6XX3A ML6413A ML6413C 2-108
ML6XX10 ML64110N ML64110C ML64110R 2 - 114
ML6XXll ML60111 R ML64111N 2 -121
ML6XX14 ML64114R ML60114R 2 -128
ML7XXl ** ML7011R ML720A1S ML7701
ML774A1F ML776B1F ML7781 2 -130
ML7911
ML7XX1A ML7781A ML7911A 2 -138
ML7XX2 ML774A2F ML7922 2 -143
ML7XX3 ML7783F 2 -149
InGaAsP
ML7XX5 ML7925 2 -152
LD
ML8XXl ML8701 ML874A1F 2 -154
ML9XXl ML9701 ML974A1F ML9911 2 -160
ML9XX1A ML9781A ML9911A 2 -166
ML9XX2 ML974A2F ML9922 2 -171
ML9XX3 ML9783F 2 -177
2 -180
AIGaAs
ML9XX5
ME1XX3 * ML9925
ME1013 3-3
LED ME1XX4 ME1504 ME1514 3-8
InGaAsP
ME7XX2 ME7022 ME7032 3 -12
LED
Si PD1XX2 PD1002 PD1032 4-5
APD PD1XX5 PD1005 4-9
Si
PD2XX1 PD2101 4-3
pin PD
PD7XX5 PD7005 PD7035 4-13
InGaAs
PD7XX6 PD7006 4-17
pin PD
PD7XX7 4-21
InGaAs * PD700A7
** : *
PD8XX2 PD805A2 4-25
APD
* :New product Under development
'. .MlTSUBlSHI
. . . . ELECTRIC 1 - 11
PRINCIPLES OFLASER OSCILLATION
1.PRINCIPLES OF EMITTING DEVICES
>-
'"~
----t.___--_.I--
Excitation level
------E2
;r '-,
'" ,_ -E
, '
UJ
>-
E, .E'
c:
UJ
.I\f\J+ . \)\r-
~'\!\J
Light Light
Electron
1 - - - - Base level
Eo - - - -•• • E,
(a) ENERGY level (b) Thermal equilibrium (c) Absorption (d) Spontaneous (e) StimJ.i1ated
status (Excitation) Emission Emission
Fig. 1 Energy level and transition processes
Electrons accompanying atoms and molecules have The third transition process is defined as
individual energetic values at specific intervals, as 'stimulated emission'. Fig. l-(e) explains that when
shown in Fig.1- (a). This status is called energy photons of ligh with energy almost equal to I E2-El I
level. The lowest energy level is defined as 'base have incidence on electrons located at E2 the
level', and the higher one is called 'excitation electrons move by compulsion to the El level.
level'. When electrons transit from level E2 to level El, The light generated in this way is called
electrons absorb or emit light which has a wavelength stimulated emission light, or in other words,
related as described in the following formula. coherent light.
A= C = 1.2398 ......... (1) Light is emitted in this way on the condition that
I E2 - E, I /h I E2 -
E, I it is resonant with the incident light, therefore both
C: Velocity of light (2.998 x lOBcm/sec) photon energies ( wavelength) are equal and the
h : Planck's constant (6.625 x 10-"Joule.sec.) phase relationship is constant. This phenomena has
E, : Energy before transition been applied to laser diodes.
E2: Energy after transition The stimualted emission is only realized when the
The termal equilibrium status on Fig. 1- (b) considers number of electrons after excitation on E2 gets
that excitation is balanced with the spontaneous larger than those on the low level E,. Such a state
emission process. The transition process consists is called 'population inversion'. An electric current
of 3 different modes as shown Fig. l-(c)-(e). The should be applied to a laser diode, in order to create
first is defined as 'absorption', where electrons this condition. Once stimulated emission occurs, the
transit from low energy level El to higher level E2 strength of the incident light should be increased
by absorbing. The second is ' spontaneous and thereby achieve optical amplification. Then, it
emission', in which electrons transit from high becomes be possible to cause the optical oscillation
energy level E2 to the stable low level El and emit by making an optical resonator. 'LASER' is an
the energy I Er El I as light. (Fig. 1 -( d)). In this acronym of Light Amplification by Stimulated
case low energy electrons loclilted at energy level Emission of Radiation.
E2 are moving at random relative to each other.
A light that is generated under such conditions is
called incoherent (not in phase) and it is a
distinctive feature of sponteneous emission. The
emitted light of LED's belongs to this category.
. , ... ..'MITSUBISHI
1 - 12 . "'-ELECTRIC
PRINCIPLES OF LASER OSCILLATION
2,STRUCTURE OF AIGaAs LASER

A laser diode can't oscillate if amplication has
Laser Beam occured, Laser oscillation never happens unless it
AlyGal ~yAs (y< x)
(Active layer) has feedback. In order to achieve this a "Fabry-
-------~-----r.~~~--~
Perot" oscillator is often used. (See Fig. 2-(a)).
The operation principles are: use the two cleaved
n-AlxGal_xAs p-AlxGal~xAs
facets as reflection mirrors. At first the beams go
(Clad layer) (Clad layer)
00 in every direction within the active layer. However.
o (a) Structure of only selected beams that correspond to the Fabry
o Cross section - Perot oscillator's direction would be confined
n-GaAs 00 Layer
between these mirrors and the result that optical
Substrate o
oscillation occurs.
(-) (+) AIGaAs laser diode for example, has a double
hetero junction structure, where an AlyGal - As
I..Q.I
I I active layer is sandwiched between nand p-AlxGal
"I I.. d -xAs cladding layers (y< x). (See Fig. 2-(a)). The
1 1
I 1
••• •• h---.......,
~ amplifying media is a double hetero junction narrow
(E~ctron) !:•• band gap layer (AlyGal- y As active layer). By making
••••• (b) Energy band the p - clad layer E& and the n - clad layer e, and
Energy • • • ••• IIT'TTTT'I"rrT'' ' ' ' ' adding forward directed bias, electrons and holes
will be injected from the nand p-cladding layers.
Carriers will be confined to the active layer and
create 'population inversion'. The result is that a
high gain will be obtained, because' the band - gap
of the cladding layer is larger than that of active
(C) Injection carrier
density (Gain) layer and a barrier will be produced in the junction.
(Fig. 2- (b), (c)). Light has a characteristic that it
gathers to' the area of high refractive index. The
1
refractive index of the activation layer is higher
nr
1,---------,H I 1
(d) Refractive index than that of cladding layer. in an AIGaAs LASER.
~ !-,---- (Fig. 2 - ( d) ) .
I :
The light will therefore remain in the active layer.
1 1 This is called 'optical confinement'. In this way.
1 1
1
p(Y)~n..l--.L:
:~ (e) Distribution of
stimulated emission will be performed effectively,
because carriers and light are confined in the active
light intensity
layer.
Fig. 2 Operational principle of double hetero junction laser
• ,MITSUBISHI
..... ELECTRIC 1 - 13
PRINCIPLES OF LASER OSCILLATION
3.Longitudinal mode
On the condition that laser oscillation occurs, beams following formula will be derived:
ruh both ways in the optical resonator and there A q = L (q : Integer)
-2 ••••••••• (2)
is an optical standing wave produced whose phase n ,
front is parallel to the reflection mirrors. Power In the case of ,l. = 780nm, n = 3.5 and L = 250 IJ, m,
output will be obtained by the wave's penetration the integer q becomes 2.244 resulting in a very large
from the reflection mirrors. This standing wave is number. Even if q changes by up to ± 1, the
shown in Fig, 3-(a). Letting the vertical length of resonant wavelength changes by only a small
optical resonator equal L, the equivalent refractive fraction, and in the above case the wavelength
index of the wave in the wave guide equal n, and balance fj.,l. will be I fj. ,l. I = 3.5A. A laser resonator
the wave length of the standing wave in the wave having resonator length L which is far longer than
guide equal ,l., then it will be clear that the total the wavelength allows the resonating of many
length L equals a multiple whole number of half waves having slightly different lengths.
wavelengths for the media ,l. /2n, and the
c ~
q
o 0 Reflection q-l
·13 .;:
., E mirror '- .... q-2 Gain balance
~
a:
(a) Standing waves of longitudinal mode ,(b) Resonance spectrum for longitudinal mode
Fig. '3 Longitudinal mode generating mechanism
4.Transverse mode
The standing waves at laser oscillation consists of stable oscillation on a basic parallel transverse
a wave generated between both reflection surfaces mode, the expanding electromagnetic fields will be
shown earlier (the longitudinal mode), a wave restained by inclucing optical waveguide using the
generated in the direction perpendicular to the active existing refractive index. Stripe structure, that makes
layer (the vertical transverse mode), and a wave the width of optical waveguide as oscillation other
generated in the direction in parallel to the active than a basic mode is insulated, is fully worked out.
layer (the horizontal transverse mode). Normally the These modes have a grat influence on the optical
transverse mode of a laser diode is required to be longitudinal mode, linearity of current-light output
a basic mode where just one luminous point exists. power characteristics, modulation speed, threshold
The perpendicular transverse mode will be a basic current, aberration' of laser beam, and so on.
mode on the normal double hetero structure laser
which has a thin active rayer. In order to achieve
1 - 14 '" ' ,MITSUBISHI

..... ELECTRIC
TECHNICAL TERMS AND CHARACTERISTICS
TECHNICAL TERMS AND SYMBOLS FOR LASER DIODES

TERM SYMBOL DESCRIPTION
Threshold current Ith Current at which laser oscillation begins (Fig. 1)
Operating current lop Forward current to obtain specified light output (Fig. 1)
Operating voltage Vop Forward voltage to obtain specified light output (Fig. 1)
Slope efficiency 1/ Change of light output per unit of applied forward current
t. Po/ A lop = 1/ (mW/mA)
Light output power Po Output power from the front facet of the LD (Fig. 1)
Pulse light output power Po (P) Pulsed output power from the front facet of the LD
ll.P Characteristic of dropping of light output caused by heat generated when a constant
Droop current in 'pulse is applied to semiconductor laser. It is expressed as follows:
PA : Light output initial value of 600Hz. 10% duty t. P PA - PB x, 00 (%)
PB: Light output final value of 600Hz. 90 % duty. PA (ref. 1- 31)
Monitoring light output power Pm Output power from the rear facet of the LD (Fig. 2)
Monitoring output current 1m Output current of monitor' photodiode (Fig. 1)
Peak wavelength . ). P Wavelength of peak longitudinal mode in emission spectra (Fig. 2)
Spectral half width t.A Full width at a half maximum of enveloped profile of emission spectra (Fig. 2)
Beam divergence angle The beam from semiconductor laser spreads as shown in Fig. 2. This angle refers
Parallel 8// to the width (full angle) at the point which is 1 12 of peak intensity in intensity
Perpendicular 8.l. distributions parallel and perpendicular to junction. Parallel direction is expressed ine
e
/I and vertical direction in L The intensity distribution concerned is called far field
pattern (FFP).
Near field pattern NFP This pattern refers to the intensity distributions parallel and perpendicular to junction
at the front facet of semiconductor laser chip (Fig. 2).
Rise time tr Time taken for the optical output to increase from 10% to 90 % of max output.
Max optical output means the steady state value attained after relaxation oscillation.
Fall time tf Time taken for the optical output to decrease from 90 % to 10 % of max output.
Cutoff frequency fc The frequency in which the sine wave amplitude of the modulated light output
obtained by intensity-modulating small signals with a sine wave at the specified light
output bias point drops to 1 12 of the low frequency amplitude.
Astigmatic distance A. There is a difference of the focal point in the parallel and perpendicular direction to
junction when the laser beam is focused. This distance is called astigmatic distance
(Fig. 3)
Polarization ratio PI/I P .l. The laser beam consists mainly of parallel polarized light output.
This is the retio between parallel polarized light and perpendicular polarized light.
Relative intensity noise RIN The parameter to indicate. like SI N. the intensity fluctuation of laser beam.
Let the average light output of semiconductor laser by DC drive be Po. the intensity
fluctuation of light output be 6 p. and the band width under test be t. f. then.
RIN = 1010g « 6 P)2 I P02 • 1 1M) [dBI Hz]
Composite Second Order CSO CSO(Composite Second Orderhefers to the intensity difference between the secondary
Composite Triple Beat CTB harmonic distortion component and the signal component generated when a semiconductor
laser is driven by current modulation (analog modulation) with a multi - chl;lnnel sine
wave signal. CTB(Composite Triple Beathefers to the intensity difference between
the tertiary harmonic distortion component and the signal component.
Signal to Noise ratio SI N .Intensity fluctuation of laser' beam. If the average light output power is defined as
Po and the intensity fluctuation is defined as 6 Po. the signal to noise is defined as.
SIN =2010g(Po/6 Po) [dB]
Mainly. a semiconductor laser has ( 1 ) mode hopping noise in which the mode jumps
at the temperature change in the junction and (2) the returen beam noise in which
the laser beam reflects from the externalresonator(a' composite resonator).
Side mode suppression ratio SMSR Ratio of spectrum intensity of maximum mode (main mbde) to side mode.
The parameter to indicate the singularity of the longitudinal mode of DFB (Distribution
Feedback) laser. (Fig. 4)
Interferogram a.f3 The damping pattern of the interferogram obtained when the laser beam is made the
interference beam through the Michelson interferometer. For details. see •. Measuring
Oscillating Wavelengths' on page 1 - 24.
1 -15
, // Ap "-
Light output
~~A\
g \ ~
- 5;; . /Lorigitudinal
, I mode
, /
(Emission spectra)' .... _ .... _/./
I
Parallel
\ (Monitoring Light
\ output Pm)
I I
I
Monitoring output current I
----'----------=11-=====----+:2!::.-.
1m
Forward
current
Forward voltage
Laser
I -- - ----~ ~E- - Perpendicular

Front facet
I +---~----
Fig. 1 Electrical and optical characteristics of laser diode : 81/:

(with a Monitor photodiode)
.lli.
Parallel
(Far Field Pattern)
Astigmatic distance As Fig. 2 Optical characteristics of laser diode
Tc = 25"C
2Gb/s NRZ
Ppeak= 5mW
Ib = Ith
Fig. 3 Astigmatic distance
1305 1310 1315

Wavelength A (nm)
Fig. 4 Spectral Side Mode Suppression Ratio
• MITSUBISH.I
1 - 16
"ELECTRIC
TECHNICAL TERMS AND SYMBOLS FOR LEOs

TERM SYMBOL DESCRIPTION
Forward current IF Standard operating current (Fig. 5)
Forward voltage VF Forward voltage when IF is supplied (Fig. 5)
Rise time tr Time taken· for the optical output to increase from 10 % to 90 % of max output
Fall time tl Time taken for the optical output to decrease from 90 % to 10 % of max output
Cutoff frequency fc The frequency (Hz) in which the sine wave amplitude of the modulated light output
obtained by intensity- modulating small signals with a sine wave at the specified
operating point drops to 1 /2 of the low frequency amplitude.
Beam divergence angle (J Full angle at a half maximum of far field radiation patterns.
Optical output Po The total optical output value to be obtained when the specified forward current is
applied. (Fig. 5)
Fiber coupled power PI The optical output value which can be coupled with optical fiber when the specified
forward current is applied. (Fig. 5)
Optical output
~<~::::Pf
\.. Optical fiber
Forward current
Forward voltage
Fig. 5 Electrical and optical charactristics of LED
• MITSUBISHI
.... ELECTRIC 1 -17
TECHNICAL TERMS AND SYMBOLS FOR PHOTODIODES

TERMS SYMBOL DESCRIPTION
Dark current ID The current which flows when the specified reverse voltage is applied without light
incidence..(Fig. 6)
Responsivity R Output current per unit of input optical power of a specified wavelength
Quantum efficiency 7/ Percentage of number output of electrons per number of input photons
Rise time tr Time taken for the incident light to increase from 10 % to 90 % of max power
Fall time tf Time taken for the incident light to decrease from 90 % to 10 % of max power
Cutoff frequency fc The frequency in which the sine wave amplitude of the signal output obtained when
the intensity modulated light of small signal by sine wave is introduced at the
specified operating point drops to 1 /2 of the low frequency amplitude.
Total capacitance Ct The capacitance between the anode and cathode lead terminals. which is obtained at
the specified reverse voltage and frequency
Breakdown vOltage V (BR) R Breakdown voltage refers to the voltage to be obtained when the specified reverse
current is flown in the area. (Fig. 6)
Multiplication rate M Ratio of the output current multiplied by avalanche multiplication to the output
current without any multiplication
Excess noise factor F Indicates the scale of noise produced in the avalanche multiplication procesS.
Excees noise factor may be repre~ented in excess noise index X shown in the
following relation:
F= MX
Breakdown voltage The change rate of breakdown voltage to the temperature with the breakdown voltage
temperature coefficient at Tc = 25"C as standard
Forward current
1
1
1
1
1
I
1
I
/,// i
I 1
I ,
Vopen (open voltage)
Reverse voltage _
~--~~--~~--~--~~~~--~~------~V
Forward voltage
Zero bias high

load straight line
Ish (Short circuit current)
.--'" Reverse bias high
load straight line
ZERO bias low load straight line
Reverse current
Fig. 6 Operating figure of Photodiode
1 - 18 '," ,MITSUBISHI
.... ELECTRIC
MEASURING PROCEDURES
<Measuring Methods>
, Page
1. Optical output vs. forward and monitoring current .................... 1 - 20
2. Impedance ............................... ~ ............................... 1 - 21
3. Measurement of thermal resistance····································· 1 - 22
4. Far Field Pattern (FFP) ................................................. 1 - 23
5. Emission Spectra························································ 1 - 24
6. Pulse response·························································· 1 - 25
7. Polarization ratio .............................. '.......................... 1 - 25
8. Astigmatic distance······················································ 1 - 26
9. Near Field Pattern······················································· 1 - 26
10. Wave front' distortion' ................................................... 1 - 27
11. Harmonic distortion .characteristic······································· 1 - 28
12. SI N characteristic ............. '...................... '.................... 1 - 29
13. Relative Intensity Noise (RIN) characteristic .•...... : ................... 1 - 30
14. Droop characteristic (Thermal characteristic) ......................... ~. 1 - 31
15. Cutoff frequency···············,························· ',' ............... 1 - 32
16. Pulse response characteristic of monitor photodiode··················· 1 - 32
17. Measurement of Pf (fiber coupled power of LED)····················· 1 - 33
18. PO spectral response characteristic····································· 1 - 33
1 -19
I Opticaloutp!Jt vs. forward and monitoring current
XV recorder
50Q
sw
DC power
supply
'------' +
,Fig. 1 P-IF and ,P-Im characteristics measuring system
Fig. 1 is an example of a measuring system that

traces P - IF and P - 1m characteristics on an XY
recorder. A noise filter and the slow starter are
implemented in order to avoid degradation of LD
. by Surge current. A silicon or germanium photodiode
is used as a detector, and the output is previously
adjusted by the load resistance R1.
(i) P-IF.
Turn ·SW to "IF"connect the LD to the power supply
at minimum volatge switch the power supply on
and gradually increase current from DC power
supply. The P-IF curve will be traced. Then before
disconnecting, set the power supply to the minimum
voltage, disconnedct the LD then turn the power
supply switch OFF.
(ii) P-Im
The load resistance R2 is adjusted to the PD bias
voltage to get an object scaling. SW is turned to
"1m" and operated as above P-Im characteristic will
be traced on the XY recoder. Please take care not
to operate the LD over the maximum optical power
rating of the LD.
.• . MlTSUBlSHI
1 - 20
."B.EC1'RIC
I Impedance
1. Reference (SHORT)
Measuring substrate (50 0 Micro strip line)
Network analyzer
Fig. 2 Reference measuring system
2. Measurement
Fig. 3 Impedance characteristic measuring system
Fig.2 and 3 are examples of circuits used to

measure the input impedance characteristics. At
first the network analyser should be referenced by
placing at the output a SHORT (0 point on Smith
chart). as shown on Fig. 2.. Next. connect the circuit.
measure the return-loss and phase at this time and
plot these on a Smith chart. By repeating this
operation at every frequency. the input impedance
will be calculated.
Typical impedance characteristics of the ML4011 OR,
with lead lengths of 2mm. are shown in Fig. 4 with
the bias currents as the parameter.
Test frequency is swept from 100MHz to 1300MHz
with 100MHz steps.
Fig. 4 Example of impedance characteristic
Above the threshold current. the impedance can be
approximated by a series connection of a resistance
of 3.50hm and an inductance of .2.3nH.
• . MrTSUBISHI
. . . . ELECTRIC 1 - 21
MEASURING ,PROCEDURES
I M.easurement of thermal resistance Next, introduce a forward cur~ent (If < Ith) f()r
electric power application for 5Qmsec. and measure
I m (1mA)
,........, ,........,
the forward voltage drop (Vf).
Repeat the first step and measure Vm2. (Fig. 5)
1,«lth)
Using the voltage values (Vml, Vm2, and Vf) thus
v, ~ h obtained, the thermal r~sistance (Rth) is calculated

as follows:
SAMPLE
Vml
n I
v,
n
Vm 2 (vml-vm2 )
Rth = m ("C/W)
If· Vf
Fig. 5 Timing chart
, where m means previously measured temperature
Thermal resistance is measured by measuring the coefficient of junction voltage
temperature· change in the junction surface by using
the temperature dependence of the forward voltage
m= (~';! )(V/"C)
drop of the PN junction of LD. An example (ML40116R, ML44114R) of thermal
At first let a small current (1m = 1mAl with a resistance is shown in Fig. 6.
negligible temperature rise to flow in the forward . Please use a heatsink of good thermal radiation
direction of the LD, and then measure the forward because the junction temperature of a laser
voltage drop (Vml) at that time. influences its life time.
ML40116R (¢ 5.6mm pkg)
300
Rthj-a
200
j
"-
e 100
.
ISc
.i<II
80
60
RthJ-c
e
'li 40
~
.<:
f- 20
10- 4 10- 3 10- 2 10 1.0

II 103
1 102
Pulse input time (sec)
ML44114R(¢ 9.0mm pkg)
~
RthJ-a
e 100~-+~-+-H~4-++H-+-HH+-~~~-+~~-++H
$
80~-+~-+-H~4-++H-+-HH+-~~~-++H~-++H
60~-+~-+-H~4-++H-+-HH+-~~~-+~~~~
40~-+~-+-H~4-++~~~~r;~~-T+H~-+~
Rthj_c
20~~+H-+-H~4-++H-+-HH+-~~~-t+H~-++H
10-2 10 10" 103

Pulse input time (sec)
Fig. 6
. .,
....... MlTSUBlSHI
1 -22 .... B.ECTRIe /
I Far Field Pattern(FFP)
/
/ -lrnm
Jl:.~
/
/
/ Laser chip
/
// Vertical
// plane T,m;" A--, PD
(
81.
d"ectlon~~
>":::;;11"1---"- - - - - - - - ~7
Laser / Plate Slit

beam/ Horizontal /
8// Plane /
/
/ L=lOOmm
/
/
Turnig //
__-_-_---'_,..._ ~ir~~i':n___/ Fig. 8 FFP measuring photodiode
Photodiode (PD)
Center axis
Fig. 7 FFP measuring system
Direct the PD in a horizontal plane (parallel to the

laser junction surface) toward the luminous surface
Optical intensity of laser beam
of laser chip and turn it along with circumference
(Length; 1OOmm) of which center is luminous
surface. and can be measured. (Fig. 7) At this. time.
the PD receiver surface is larger than the luminous
surface of the laser chip, so it is necessary to fully
enlarge the length from the laser chip and settle
a slit on PD, in order to improve resolution (Fig.
8). To measure the (;11. direction, turn the laser chip
90· from the .center axis and measure in the same
way as (;1//.
Angle (9//. 91.) The measured result is shown in Fig. 9 . Figures of
t
Center axis
(;1// and (;11. are hanging-bell type symmetrical to the
center axis, as angles from the center axis, get
larger. This is called Gauss distribution, and the
Fig. 9 sharpness of beam direction depends on the width
of this distribution. Generally the width of angle
(full angle at half maximum) in the parallel ((;11/) and
in the perpendicular ((;11.) d.irection of which the
intensity gets down to 0.5 of the maximun optical
intensity is specified as the beam spreading angle.
Resolution by this measurement is 0.10· .
The angle of gap between the center axis of (;II/and (;11.
in FFP is defined as the angle gap,A (;I//A (;I Hespectively.
. •. MITSU.·BlSHI
. . . . ELECTRIC 1 - 23
I Emission Spectra
1. Measurement by diffraction grating
The measurement of the Emission spectra with a
spectrometer, in which the light from the device
under measurement is scattered by diffraction Spectrometer
grating is shown in Fig. 10.
The light comes through the slit into a photomultiplier.
The oscilloscope indicates the spectra which can be
measured.
Slit
Photomultiplier
2. Measurement by Interferogram Oscilloscope

To measure the Emission spectra with interferogram,
the light from the device under measurement is
represented as interference light with a Michelson
interferometer (Fig. 11 ).
Performing an inverted Fourier transformation on
Fig. 10 Emission spectra measuring
this interferogram yields the spectra. principle by diffraction grating
If the peak value corresponding to the zero
position of movable mirror is defined as 1 in Fig. 12,
the first peak ratio is defined as interferogram
damping ratio a.
The minimum value between the peak value of
optical path difference 0 and the primary peak value
is defind as /3.
Fixed mirror
. Beam splitter
( Movable mirror
-Q~+Q
1
A. A ~t'.A
f3 t Inverted Fourier
-
transformation
__
A ...E---"-_ _ ~
- Q +Q Wavelength
(ill (bl
Interference light
Interferogram Spectrum
Michelson
interferometer
Fig. 1.1 Michelson interferometer Fig. 12 Measuring by interferogram
'.. MITSUBISH.I
1 - 24 "ELECTRIC
I Pulse response
P.G.
Pulse
generator
500 Micro strip line
470
500
r:::::==:::J---i-4
:!-
Mico strip line
1---- 0 Sampling
Oscilloscope
LO PO or APO
I
Fig. 13 Pulse response characteristic measuring system
Fig, 13 indica.tes an example for measuring

seriesPulse response characteristics.
Let the time required for the pulse rising (10 %-
90%) from the sampling oscilloscope output waveform
be tr, and the time for falling be tf.
I Polarization ratio
Polarization Prism
PO
Slow
t----n--+----0 P- output
starter (to XY recorder Y)
t---'\NIr..-lAPC circuit
IF- output
(to XY recorder X)
Fig. 14 Polarization ratio measuring system
A laser beam is oscillated almost in TE mode (Beam measurement set - up required to measure the
polarized horizontally to hetero junction). The beam Polarization ratio. Turn the laser beam to a
strength is shown as PII. TM mode (Beam polarized collimated one by using a lens with NA = 0.5 and
vertically to hetero junction) is just as strong as resolve the polarization prism, to measure the
natural light (beam). This beam strength is shown maximum power (P/I) and minimum power (P.1.).
as P.L The Polarization ratio is the ratio between Obtain the ratio of PI/to P .1. at each optical output
the optical strength of the TM mode and the TE from the curves of Pw IF and P.1. -IF. The ratio thus
mode (P /II P .1.). Fig. 14 shows an example of the obtained is the polarization ratio.
• MITSUBISHI
. . . . ELECTRIC. 1 ~ 25
OJ Astigmatic distance
Camera
Camera controller
r:===::1 Display
(Astigmatic difference)
Personal
computer
(*) LD window glass thickness correction lens

Fig. 15 Astigmatic distance measuring system
Figure 15 shows a sample measuring system. Move

the LD in the optical axis direction in steps of 2 ML4403
f.L m by driving the Z-axis motor. Read the spots 10
'P o =3mW CW
,/T"
parallel and perpendicular to hetero junction surface
in the intensity diameter of 1/e2 of the peak value. E
Plot the spot diameters (parallel and perpendicular) in ~
"-
.<:
., /0 Perpendicular
the direction of LD movement as shown in Fig. 16. .;" j~ .'-, ," }~ection, '
/,'-
5 ,,
Then, approximate this data with a curve to obtain ~ N
f'
".....
~., .
0 ..
the LD position at which the spot diameters in

~6 ':-Ii,·,,111(
parallel and perpendicular directions are smallest. ., , I'-Parallel
direction
The difference in the distance of the movement --r Astigmatic

is the astigmatic distance. A measurement example o -I distance 3.6 /.l m
o 10 20 30
(ML4403) is shown' in Fig. 16.
mNear Field Pattern LD moving distance (/.l m)
Fig. 16 Example of astigmatic distance measurement

In Fig. 15 please observe the near field pattern of
LD by a real image of 500 magnification and
camera of 5000 magnification.
·'MITSUBISHI
1 '- 26 "'-ELECTRIC
iii Wave front distortion
~tt=======~--{:":'::~#======1~=;~Beam Splitter 2
Beam Splitter 1 ~t=~~======--""'r+=====v:;~~
Detector array
Collimate
NA=0.30
LD
Fig. 17 Wave front distortion measuring system

Equiphase surface of a laser beam without any
aberratiqn is spherical. However, in general, the wave
front has a distortion. Most of this distortion R
parallel
consists of an astigmatism. The astigmatism for
parallel direction to the hetero junction has a I
I
I .
different value from that for perpendicular direction I Astigmatic distance
I .
I I
to the hetero junction. because the curvatures of t-AZ --i
, Ry
I
I
I
I
wave front for the two directions are different to " ", I I
I I
each other. Perpendicular
R " , I
" I I
The wave front distortion is measured by the

equal- path Mach - Zehnder interferometer shown in
Fig. 17. Various aberrations are calculated by Zernike's
polynomial approximation for the interference fringes
Fig. 18 Relationship between astigmatic
observed by the Mach - Zehnder interferometer. The
distance {j. Z and astigmatism (j. if;
relationship between the astigmatism (A </J) and the
astigmatic distance (see page 1 - 26) (A Z) is shown The sample measurement (ML5415N) is shown in
in Fig. 18. Figures 19 and 20.
Fig. 19 shows wave front (phase front) of ML5415N
NA=O. 25. Po=3mW CW
A ~ p.v : O. 129 when the laser beam is collimated.
A 4> RMS .: O. 014
NA=O. 25. Po=3mW. CW
-1.0 lJ. 'l> Aberration (Note)

Type of aberration
RMS P-V
Spherical aberration 0.011 * 0.130
Coma aberration 0.011 * 0.128
0.058
Astigmatism 0.014 0.129
0.025 Curvature of field 0.011 * 0.128
Distortion 0.014 0.129
I~~~~~~~~~~~~,~~,~
(* 0.011 is a measuring limit value)
-0.071.
-0.5 0.0 O. 5---:.;.!. 0
Distance on Surface Parallel direction
Fig. 19 Example of wave front distortion Fig. 20 Example of wave front distortion
• MITSUBISHI
"'ELECTRIC 1 - 27
ID Harmonic distortion characteristic
0
SO-450MHz Spectrum analyzer'
Amplifier
Multi-channel
generator
L.___Sig_n_al__ ~ LD~~.
\ ____ ==·~ ==_~~
_ __
Fig. 21 Harmonic distortion measuring system
Figure 21 shows a harmonic distortion measuring

system. When a semiconductor laser is directly
modified with a multi-channel sine wave signal fn
CSO
(n = 1-) of 6MHz intervals, the secondary harmonic (Composite
Second order)
distortion component is generated on the
frequencies of fn ± 1.25 and fn ± 0.75 against signal
frequency fn. The tertiary harmonic distortion
_.L-_-'-_-'-_-"_--I_ _ [MHz]
component is generated on the frequency same as fn-1.25: fn : fn+1.25
·~Ifn
signal frequency fn (see Fig. 22). The intensity fn - 0.75
+ 0.75
difference between the signal component and the
: CTB
secondary harmonic distortion component is defined : (Composite
: Triple Beat)
as CSO, and that between the signal component
and the tertiary harmonic distortion component as
·
CTB. t
fn
I
Fig. 22 Example of spectrum at 40ch modulation
. , MTSUBISHI
1 - 28 lTa.B.ECJRIC
III SIN characteristic
Length of external resonator (variable)
Effective NA = 0.15
Filter
Pelche (Tc control)

c:;> DC (Signal
spectrum analyzer
BS PBS Detector (Noise)
(MERET MDA438)
Fig. 23 S/N ratio characteristic evaluating system
The noise of a laser produced in Optical Disk ML4402

f=20kHz, BW=300Hz, T c=25-50'C
Systems is mainly optical feedback noise. The 70
optical feedback noise is generated when the beam
from a semiconductor laser is reflected from a disk 80r-~----~-------r------4
surface or the like and gets in the laser again. Let

m 90~r·----·~·~---r-------r-----~
the mean optical power by CW drive be Po and -0 .-A. ....•
fluctuation be 0 Po, then the SI N value is as Z ' :/'='---_~.~"" --0-- 1mW

;n -=::t!I'~'~'~-Q-~:::'=:I'Io~i!-==::5l.~~ - --0-- - 2mW
100 lII"'=1'f--<g..-=:=
follows: ·'-~·:-~,::::"rr7':---::1I -"-<>-"-3mW
Po
S/N = 20 log - - [dB] --L>--4mW
1) Po 11 0 ~-t-------+-------r--------l .. -'. ___ 5mW
Optical feedback noise is measured by the set- up
as shown in Fig. 23. Optical feedback ratio will be 120 '--:-":-:----::-.1-------"-------'
0,01 0.1 10
changed from 0 to 5 % by using filters.
Optical feedback ratio Rf (%)
For the noise at each optical feedback ratio,
measure the worst value to be obtained when the Fig. 24 Example of S / N characteristic
case temperature has been changed. Make this

measure by specifying the measuring frequency and
the measuring band width. Figure 24 shows a
measuring example with a measuring frequency of
20kHz and a measuring band width of 300Hz.
• MITSUBISHI
. . . . ELECTRlC 1 - 29
III Relative Intensity Noise (RIN) characteristic
Spectrum
analyzer
Fig. 2E? RIN evaluating system
The analog communication light sources such as

the cable TV ( CATV) require the low noise
characterisric up to several 100MHz. RIN can be
obtained as follows with laser's mean optical output ML7925
Tc = 25 "C. tot = 3MHz, Rt = 0%
being Po, the optical output fluctuation being 8 Po,
';)
and the band width under measurement being A f : J:
...... -100
CD
;S CW.Po= 10",W
r. < 8PoP >21
RIN = 1010g l 2 •
J
A f [dB/Hz]
z
a: -120 -
.~
0
c -140
For measuring the RIN characteristic, the optical ....,
>
c
system shown in Fig.25 is used. Figure 26 shows $ -160
,S:
a sample measurement with Tc = 25 "C, the band
.~
-180
width under measurement = 3MHz, and the optical j
feedback ratio Rf = 0 %. 0 0.2 0.4 0.6 0.8 1.0
Frequency CGHz)
Fig. 26 Example of RIN measurement
'. ". MrTSUBISHl

1 - 30 "'ELECTRIC
• Droop characteristic
(Thermal characteristic) r---l
I I
Oscilloscope : :
I I
lop monitor:@o'+:--+-:---.Jj'------.---,
L ___ .J
Oscilloscope
L - - _ J -_ _ _ 1m (Po) Monitor
Pulse
Generator
-5V
5000 2.2kO T r : 2SC1324
1000
MZ304
270
1------<---____+---0 -12V
0.47,..F
1 3.3,..Fl+
Monitor output
Fig. 27 Droop characteristic evaluating system
(Optical output)
The droop characteristic indicates the dependance
-~
--- ~r- of the optical output power with temperature.
PB Fig.27 is and example of the measuring circuit.
,
The measuring condition which shows in Fig. 28

should be at a frequency of 600Hz, duty 10% and
duty 90%.
b; '09£ duty'
909£ duty
600Hz
'~,
Time When PA is the initial light output at a 10% duty
pulse and PB is the final light output at a 90 %
duty pulse, droop(~P) is defined as following formula.
~ P (%) =
PA - PB
PB
x 100
Fig. 28 Definition of droop Example (ML4403) of droop characteristic is shown

in Fig. 29.
r 0.5mW/div lO.5mw/div
OmW-
l;.P=6.0%
----- ML4403 ........-

0.333ms/div o. 333ms/ div
Fig. 29 Example of droop characteristic evaluation
.... ELECTRIC
' . ' ·MITSlBSHI 1 - 31
II Cutoff frequency
T. G. 50 Q Micro strip line 470 50 Q Micro strip line Spectrum analyzer
Tracking
generator
Q----/ 1-,-=-=-t====5~M~ M===::J--r----1 t----D
LD APD
I I
Fig. 30 Cutoff frequency evaluating system
Fig.30 is an example of the measuring set- up for

frequency characteristics.
The Cutoff frequency fc (MHz) is the frequency
at which the signal level falls by 3dB.
1m Pulse response characteristic of a monitor

photodiode
Sampling Oscilloscope
Pulse
generator
Fig. 31 Monitor PD pulse response characteristic
Fig.31 an example of a measurement system for

monitor PO pulse response characteristic.
To minimize the losses use rnicro strip lines for
the connection on PG/LO and po/~sc.
1 -32
• Measurement of Pf (fiber coupled power of

LED)
PD
LED +------0 Output

GI 50/125 OF
Fig. 32 Pf measuring system
Whe'n using optical fiber in communication systems.

it is important to know how much of the output
light from the LED is efficiency coupled to the fiber.
Fig. 32 shows a Pf measuring circuit. Let constant
current flow through the LED. and moving the end
of fiber to X. Y and Z direction near the emitting
point until the measured light is a maximum.
Fiber used is normally G150/125 OF.
lIB PO spectral response characteristic
~=(>DQ===
Halogen lamp
PD
Fig. 33 PD spectral response measuring system

-----
Iph
Fig.33 shows an example of a system used to

measure the PO spectral response characteristic.
Using a halogen lamp etc. as a light source. and
taking only light of a single wavelength by using
a monochrometer. focus the light and irradiate the
PD.
The responsivity R for that Wavelength ( .l. ) will
be the calculated as the ratio between Iph (optical
current flowing through the PO) and P (the input
power) R = Iph/P (A/W)
.•. MITSUBISHI
r...El..ECTRIC 1 - 33
DRIVING CIRCUITS
DRIVING CIRCUITS
• Example of a slow starter circuits
• Common Anode type (- Power drive) • Common Cathode type (+ Power drive)
L1820 p. H 2SA850- D L2820 p. H L1820p.H L2820 p. H

r-~~~rn~~--~-oB .r-~-----...~~-_--oB
(-) (+)
~--~-4---"""--~--~-oB' -+---.:....::.~---4-'----.....--~-oB·
(GND) (GND)
• Example of an APC circuits

• N type
~~
PD'~'LD
Photodiode
B'o--~~r-~~------t~-=--~--~-.
GND
2SC
3311
A
R5 440
.C type
h~/ • R type
nh~
PDfS,LD
PD'5'LD
+5V
50 Q 50 Q Ml308
Bo-~r-------~----+----------------
Photodiode
!'Laser
diode
B'o-~~~~~~~--~--~------~--~
GND
1 - 34
DRIVING CIRCUITS
• APPLICATION(LASER BEAM PRINTER)
M37450 (8- bit MCU) 10MHz

M37451 0
Control Board
16bit Timer CPU CPU Interface
Serial I/O UART
16bit Timer 8bit
Baud rate
16bit Timer generator
ROM
4K/8K/16K
0- A 8bit A-D 0
7
D- A 8bit RAM
128/256/384
I/O Port A-D 7 DC Motor

PWM Output
M66510 (*)
(Digital ASSP)
VL1
(*) Note: M66512 is available for N type. Series Control Signal
• MITSUBISHI
. . . . ELECTRIC 1 - 35
. RELIABILITY
As the operating life time of optical devices. especially laser diodes. is important for reliability. it is explained
at this page. We sincerely hope that the "Mitsubishi semiconductor reliability handbook" will be of value
for basic concepts for quality. quality assurance system. reliability theory and reliability tests of Mitsubishi
semiconductor devices.
1. Definition of life time

The life time of laser diodes is defined as the
change of the. light output power P versus forward
current IF characteristic because the P-I characteristic
is the most important factor for laser diodes. a.
In Fig. 1 (a) shows P-I characteristic under initial ~
condition. Q Po --------
;;
Q
The laser should be operated continuously and ;;
its light output power(Po) should be kept constant
o
by the APe drive.
Operating current lop (0) at initial condition
increases until lop (to) that is caused by decreasing
slope efficiency and increasing threshold current as 10p(0) lop (to)
Current IF
a result of degradation of the crystal. (Fig. 1 (b»
As degradation increases, a constant light output Fig. 1 Light output power vs.
forward current characteristic of laser diode
(Po) can't be kept. (Fig. 1 (c»
Fig. 2 shows an example of operating current lop
(t) vs. operating time t.
2.0~-------~--"'"
Life time is defined as the time at which the
operating current lop (t) is 1.5times as large as the
initial operating current lop (0).
In Fig. 1, the life time of laser diodes just
corresponds to condition (b) .
c
~ 1.0
u
Ol
c
.;::;
io 0.5
-0
.~
"iii OL-------~--~
E
(; o to
z Time t
Fig. 2 Change in time of operating current
•... .··.MITSUBISHI
1- 36 ...... ELECTRIC
RELIABILITY
2. Occasion of Influence on lifetime

In the operating condition a large injection current density-kA/ c m' and a large optical density-MW / c m'
exist in certain areas of the active region of laser diode, so their permitted quantity is not large for excessive
current injection and excessive light output power.
So for practical purposes do not use the absolute maximum rating of the individual laser diodes.
Under the maximum absolute values the case temperature influences the operating lifetime of the laser
diode. Increasing case temperature causes the injection current to increase the temperature of the active
region, this results in accelerated degradation. Increasing the light output power causes the optical density
to increase resulting in accelerated degradation.
Acceleration of degradation caused by temperature and light output power is expressed experimentally as
follows.
:J
(1) Accelerated life time due to temperature increase u 10·
iF. Defect criterion
Arrhenius formula can be applied to the failure rate § 10' ; 6Iop > 50%
of a laser diode just like almost any other ~
.<:
semiconductor. Life time acceleration factor AL u.
10·
f- Po = 7mW,CW
between case temperature To ( K) and T, (K) is f-
:::;: 105
indicated as follows. (I)
!
t ..2 10'
AL = e l!.kE ~o -+,) = e "606 x l!.E(-r'o -+) ~
c: 10'
where t::.. E ( ev) is the activation energy, k is I"
.c 102
Boltzmann's constant.
"E
';::: 10300
For example, in the case where t::.. E = 1eV, and the 200 150 100 50 25
c:
temperature rise is 10 "C from room temperature ~
:::;: Case temperature Tc ("C)
(300k), the lifetime acceleration factor is 2.8.
Fig. 3 shows the example of mean time to failure Fig. 3 Life dependency on case temperature Tc
(MTTF) vs. case temperature Tc ("C).
:J
(2) Accelerated lifetime due to increased light uiF. 10·...------------....,
output power. ~ Case temperature
There is no qualitative formula for accelerated (I) 10' Tc = 90'C
.l:
lifetime due to increased light output power, but it u.
is expressed experimentally as follows. 1=
:::;:
BL = ~~~r e 105~--~~~-------------~
..2
~
where BL is the lifetime acceleration factqr between
the light output powers PI and P2.
In the case where n = 2, and the light output
j
power change from 2mW to 4mW, the life time ~
'~ 1 02 L-_ _ _...l.._ _.L...-...I...._.L...----I.....J
acceleration factor is 4. ~ 1 3 5 7 10 15
Fig. 4 shows the example of mean time to failure :::;:
Light output power (mW)
(MTTF) vs. light output power (Po).
Fig. 4 Life dependency on light output power Po
1 - 37
SAFETY CONSIDERATIONS
• Safety considerations for laser diodes

Mitsubishi laser diodes are aU put given operating
aging tests at high temperature and have high
reliability.
In order to keep this reliability. take care with the
Max. Rating f - - - - - - - - - - f \ (
following points.
• Maximum rating
Laser is a semiconductor device which has high
current density and high optical density of
about 2.1 /.t m x 0.7 /.t m near field ( ML4000
series). Degradation of devices should be con-
Current
sidered more carefully than silicon semiconductor
devices. Therefore. the absolute maximum ratings Fig. 1 Light output power vs.
forward current characteristic of laser diode
should never be exceeded even for a short time.
• Surge current and heat radiation
In operating laser diodes. sufficient surge protection
measures are required. Surge current is easily
produced during power switching and output
adjustment.
Referring to the example of connections for
laser operation. and make sure that sufficient
care is taken.
· Prior light output adjustment should be done by load resistance from

several Q to over ten Q.
· Turn the switch of APC(ACC) circuit to regulated light output. If there is
any influence of optical feedback from solar battery. slant it a little and
let it receive the beam.
· Heatsinking (The life of laser diodes depends on the case temperature.

Soldering
will be the Fix the laser to heat sinking and , make the operation temperature as low
best. as possible.)
· The beat way is to make a light output adjustment checking both current
and light output.
APC circuit (ACC) I · Refer to the drive circuit on page 1 - 34
Slow starter circuit~

Power supply
· Keep power ON before setting up the laser diode, in order to protect it

from surge current produced by switching (ON - OFF) the power supply.
· AC noise filter for protecting against surge current from AC 100V.
Fig. 2 Example of surge current suppressing and heat releasing circuit
'.. .·.·MlTSUBlSHI
1 - 38 .... ELECTRIC
SAFETY CONSIDERATIONS
• Safeties
The laser beam from the laser ( diode) mainly
consists of near infrared rays and is very harmful
to the human eyes though it is invisible. Take great
care not to !Iook directly into the luminous point
when the laser is in operation. The laser beam can
,·tWMil INVISIBLE LASER RAOIATION-
AVOIO DIRECT EXPOSUAE TO BEA~
PEAK POWER mON

be observed by with an IR viewer, lTV camera or WAvELENGTH
CL.ASS m
nm
b LASER PRODUCT
a simpler,lR phosphor device (made by KODAK

Warning Label
corp.), which can all detect infrared rays.
SEMICONDUCTOR LASER
~
AVOID EXPOSURE-Invisible
Laser Rad iation is em itted
from this aperture.
Aperture Label
* Looking into the output beam condensed

by the lens is strictly prohibited. TYPE ML .:.:N.:::.o'-----_ _ __
Ith lop ",A :.-Po~_.::.:mw~
Ap ~Im~_~ ~@~___·~c
MANUFACTURED
For each device, each of the labels shown right
are attached to the individual laser container. This produci conforms to OH HS regulations
21 CFR Subchapter J.
They are illustrated to comply with the requirements
of DHHS standards under the Radiation Control for • MITSUBISHI ELECTRIC CORP.
Health and Safety Act of 1968. . . . . 2-J.MclrUAlUCn 2c::home,Ct"tyoda kU,Tokvo 100 Japan
Identification and Certification Label
• MITSUBISHI'
"-ELECTRIC 1 - 39
LASER DIODES
MITSUBISHI LASER DIODES
ML2XX1 SERIES
FOR OPTICAL COMMUNICATION
TYPE
NAME ML2701
DESCRIPTION FEATURES
ML2XXl is a high - Power AIGaAs semiconductor • Single longitudinal mode
laser which provides a stable. single transverse mode • Short astigmatic distance
oscillation with emission wavelength of 830-870nm • Low threshold current. low operating current
and standard light output of 8mW. • Built- in monitor photodiode
ML2XXl uses a hermetically sealed package incorpo- • High reliability. long operation fife
rating the photodiode for optical output monitoring.
This high-performance. highly reliable. and long-life APPLICATION
semiconductor laser is suitable for such applications Optical communication systems
as short- distance optical communications.
ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Conditions Ratings Unit
CW 10
Po Light output power mW
Pulse (Note 1) 15
VRL Reverse voltage (Laser diode) - 3 V
VRO Reverse voltage ( Photodiode) - 15 V
IFo Forward curr~nt( Photodiode) - 10 mA
Tc Case temperature - - 40~+ 70 °C
T.,g Storage temperature - - 55~+ 100 °c
Note 1: Duty less than 50 %. pulse width less than 1 J1. s.
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc = 25°C)

Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
Ith Threshold current CW - 30. 50 mA
lop Operating current CWo Po = 8mW - 55 90 mA
Vop Operating voltage CWo Po = 8mW - 1.8 2.5 V
11 Slope efficiency CW.Po=8mW - 0.32 - mW/mA
AP Peak wavelength CW.Po=8mW 830 850 870 nm
8;; 8eam divergence angle ( parallel) CW.Po=8mW - 12 - deg.
8l. Beam divergence angle (perpendicular) CW.Po=8mW - 35 - deg.
Monitoring output current CWo Po = 8mW. VRO = 1V.
1m 0.3 0.8 2.0 mA
(Photodiode) RL = 10 Q (Note 2)
10 Dark current (Photodiode) VRO = 10V - - 0.5 J1.A
C, Total capacitance (Photodiode) VRO = OV. f = 1MHz - 7 - pF
Note 2: RL is load resistance of the photodiode.
• MITSUBISHI
. . . . FIF~~ ?-"l
ML2XX1 SERIES.
OUTLINE DRAWINGS
¢ 9 -0. 03 Dimensions in min
1 ~~I
~'" c.~ ~=='-==r............
o
Reference slot
(2) (1)
4 - ¢ 0.45
P.C.D.¢ 2.54
2-4
ML2XX1 SERIES
SAMPLE CHARACTERISTICS
I Light output vs. forward current Fig. 1 Light output vs. forward current
Typical light output vs. forward current characteri- 1Or---,---r---T-"---"
sties are shown in Fig.1. The threshold current for
lasing is typically 30mA at room temperature.
Above the threshold, the light output increases
linearly with current, and no kinks are observed in
the curves. An optical power of about BmW is
obtained at Ith + 25mA.
Because Ith and slope efficiency T/ (dPo/ dlF) is 1:
01
temperature dependent, obtaining a constant output :.J
at varying temperatures requires to control the case

temperature Tc or the laser current. (Control the
case temperature or laser current such that the
outputcurrent of the built- in monitor PD becomes
Forward current. IF (rnA)
constant.)
II Temperature dependence of threshold current(lth} Fig. 2 Temperature dependence of threshold current

A typical temperature dependence of the threshold 70
current is shown in Fig.2. The characteristic tempe-
rature To of the threshold current typically 65K in
Tc ~ 50"(;, where the definition of To is Ith ex: exp ",.......
(Tc/To).
,/V'
0/
V
0
10 10 20 30 40 50
Case temperature. Tc ("C)
II Temperature dependence of slope efficiency Fig. 3 Temperature dependence of slope efficiency

A typical temperature dependence of the slope
efficiency T/ is shown in Fig.3. The gradient is Po~8mW
CW
- 0.002mW/mA/oC. ~
E
"-
~ 0.3 ~
,5 ..............
'">- ~
0
t:
.!!! ~
~
.Il
~
.
Q
0.2
£
o 10 20 30 40 50
. • MITSUI3ISHI
ML2XX1 SERIES
II Forward current vs. voltage Fig. 4 Forward current VS. voltage

Typical forward current vs. voltage characteristics 40
are shown in Fig. 4. In general. as the case
temperature rises, the forward voltage VF decreases
30
slightly against the constant current IF. VF varies
typically at a rate of - 2.0mV/oC at IF = , mA.
Tc = 50 'C "'I
0
J"-..25'C
0
o 1.0 2.0
Forward voltage. VF (V)
EI Optical output dependence of emission spectra Fig. 5 Emission spectra under CW operation
Typical emission spectrum under CW operation are
Tc = 25'C
shown in Fig.S. In general, at an output of 5mW,
single mode is observed. The peak wavelength
depends on the operating case temperature and
forward current (output level).
Xl 8mW
X1.3 5mW
X7.9 j 2mW
X250 _,11111 Ith
843 853 863
Wavelength. A (nm)
mTemperature dependence of peak wavelength Fig. 6 Temperature dependence of peak wavelength

A typical temperature dependence of the peak 858
Po=8mW
wavelength at. an output of CW 8mW is shown in
Fig.6. E 857
,..-
As the temperature rises, the peak wavelength
shifts to the long wavelength side at a rate 6f
-5
"-
"" r'
about 0.25 nm/oC typical.
855
f
~
~ 854
.J
/
85 3
25 30 35 40
Case temperature. Tc ('C)
..• MITSUBISHI
2-6 . . . . ELECTRIC
ML2XX1 SERIES
Fig. 7 Far- field patterns

I Far-field pattern in plane parallel to heterojunctions
ML2XX1 oscillates in the standard transverse mode
(TEoo) regardless of the optical output level. They
lOmW
have a typical emitting a'rea(size of near-field pattern)
of 2.1 x 0.7 II rn'. 'Fig.7 and Fig.B show typical
farfield radiation patterns in • parallel" and
·perpendicular" planes.
The fu1l angles at half maximum points (FAHM)
are typically 12° and 35° .
Off- axis angie (deg.)
Fig, 8 Far- field patterns,

in plane perpendicular to heterojunctions
5
S:>
o
Olf- axis angie (deg.)
I Pulse response waveform Fig, 9 Pulse response waveform

In the digital optical transmission systems, the
response waveform and speed of the light output
against the input current pulse waveform is one of
the main concerns.
In order to shorten the oscillation delay time, the
laser diode is usually biased close to the threshold
current. Figure 9 shows a standard response waveform
obtained by biasing ML2XX1 to Ith and applying
a square pulse current (top of Fig.9) up to BmW.A
quick response is obtained with rising and falling
times being both O.3ns typical.
Time (nsec.)
.,·MITSUBISHI
"-ELECTRIC . 2-7
ML2XX1 SERIES
I Light output vs. monitoring output characteristic Fig. 10 Light output vs. monitoring output current
The laser diodes emit-;'bearns from both of their 10r---------~r-----------,
mirror surfaces, front and rear surfaces. The rear

beam can be used for monitoring power of front
be,am since the rear beam. is proportional to the ~
.5
front one. Fig.'10 shows an example of light ~
output vs. monitoring photocurrent characteristics. '5Q 5
The monitored photocurrent linearly increases with '50
the light output. .E
.2'
-'
Monitoring output. 1m (mA)
1m Polarization ratio va. light output characteristic Fig. 11 Polarization ratio vs. light output
The main polarization of ML2XX1 is made' in the 120r-------,-------""T'--------,
direction parallel to the active layer. Polarization
ratio refers to the intensity ratio of the light polarized
in parallel to the active layer to the light polarized
in perpendicular to it. Figure 11 shows the
standard polarization ratio vs. Total light output .~
characteristic. c:
.2
The polarization ratio increases with the light power. .~
~
4 8 12
Light output, Po (mW)
Fig. 12 Impedance characteristics

Bllmpedance characteristics
Typical impedance characteristics of the ML2XX1,
with lead lengths of 2mm,is shown in Fig.12 with
the bias currents as the parameter. Test frequency
is swept from 100MHz to 1300MHz with 100MHz
steps.
Above the threshold current" the impedance of
the ML2Xxf is nearly equal to a series connection
of a resistance of 5' ohm and ah inductance of
5nH.
, • , ' MlTSUBlSHI
2-8
"ELECI'RIC
ML2XX1 SERIES
. . Astigmatic distance Fig. 13 Astigmatic distance

There seems to be a difference in luminous point 10
in the parallel and perpendicular direction with the I
'.
\
Po=3mW CW
NA=O.7
I
I
I
E perpendicular
laser beam. This distance betweeen the two points ... ..
\
I
...
"
I direction
is the astigmatic focal distance. Therefore, when
~
:2 I'
~
:r-'
the laser beam is focused, there is a difference in
focal point in the two directions. Therefore, when
1 I
\
\. \ '
I
I
I
I
"
"-• ,,
N",
5
the laser beam is focused, there is a diff-erence in "-
::;
I
\
....... ....
~ ..,.... parallel
, I
focal point in the two directions, making it difficult
to converge the beam spot to the diffraction limit.
The typical astigmatic focal distance at NA = 0.7
·1
E
0.
'..' direction
VI Astigmatic
--;oj--+~ distance 6.8 Jl m
of ML2XXI is shown in Fig.13.
ooL-----~10--~--2~OL---~3~O-----740-
The LD position which minimizes the horizontal and
vertical spot diameters is obtained. The astigmatic
LD moving distance. (Jl m)
distance is the difference in moved distances thus
obtained.
2-9
ML3XX1 SERIES
FOR OPTICAL INFORMATION SYSTEMS
TYPE
NAME ML31 01, ML3411
ML3XX1 is an AIGaAs semiconductor laser which • Single longitudinal mode
provides a stable. single transverse mode oscillation • Short astigmatic distance (1 IJ, m standard)
of a standard light output of 3mW around • Low threshold current. low operating current
emission wavelength of 850nm. • Built- in monitor· photodiode
ML3XX1 uses a hermetically sealed package • High reliability. long operation life
incorporating the photodiode for optical output
monitoring. This high- perfomance. highly reliable. APPLICATION
and long - life semiconductor laser is suitable for Laser beam printer. telemetry. instrumentation.
such applications as optical information processing alignment. and optical communication
and precision telemetry.
ABSOLUTE MAXIMUN RATINGS

CW 3.5
Pulse (Note 1) 6
VRL Reverse voltage ( Laser diode) - 3 V
VRD Reverse voltage (Photodiode) - 15 V
IFD Forward current ( Photodiode) - 10 mA
Tc Case temperature - -40-+ 60 ·C
T.t9 Storage temperature - - 55-+ 100 ·c
Note 1: Duty less than 50 %. pulse width less than 1 Il s.
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc = 25 ·c)
Limits
Min. Typ. . Max.
Ith Threshold current CW - 20 40 mA
lop Operating current CWo Po=3mW - 30 50 mA
Vop Operating voltage CWo Po=3mW - 1.8 2.5 V
T} Slope efficiency CW.Po=3mW - 0.3 - rr)W/mA
811 Beam divergence angle (parallel) CWo Po=3mW 8 11 18 deg.
8J. Beam divergence angle (perpendicular) CWo Po=3mW 20 30 50 deg.
Monitoring output current CWo Po = 3mW. VRD = 1V.
1m 0.1 0.3 0.7 mA
ID Dark current (Photodiode) VRD = 10V - - . 0.5 I1A
Ct Total capacitance (Photodiode) VRD = OV. f = 1 MHz - 7 - pF
Note 2: RL IS load resistance of. the photodiode.
. • MITSUBISHI
2-10 .... ELECTRIC
ML3XX1 SERIES
OUTLINE DRAWINGS
Dimensions in mm
16±0.25
(3)
~
as.
II II
PD S LD
(2) (1)
mm
(3)
as.
Referencer slot
PD
~
5
II II
LD
(2) (I)
3 - ¢ 0.45" 0.05
P.CD. ¢ 2.54
(1)(3)(2)
• MITSUBISHI
. . . . ELECTRIC 2 - 11
ML3XX1 SERIES
D Light output vs. forward current Fig. 1 Light output vs. forward current
Typical light output vs. forward current characteristics 4
are shown in Fig.l. The threshold current for
Above the threshold. the light output increases
. linearly with current. and no kinks are observed in
the curves. An optical power of about 3mW is
obtained at Ith + 10 mA.
Beacause Ith and slope efficiency TJ (dPo/ dlF) is
temperature dependent. obtaining a constant output
o~~~~==~ __-L__~
case temperature or laser current such that the o 10 20 30 40 50
output current of the built-in ,monitor PO becomes
Forward current IF (rnA)
constant.)
EI Temperature dependence of threshold current (lth) Fig. 2 Temperature dependence of threshold current
A typical temperature dependence of the threshold 40r-------~------_r-------,
current is shown in Fig. 2. The characteristic

temperature. To of the threshold current is typically
65K in Tc;;;; 50°C. where the definition of To is hh
oc exp (Tc/To)
10~------~------~------~
o 20 40 60
Case temperature Tc ("C)
I Temperature dependence of slope efficiency Fig. 3 Temperature dependence of slope efficiency

efficiency TJ is shown in Fig.3. The gradient is
- O.0015mW/mA/oC.
g
u;
O.2~------+-------~------~
o 20 40 60
2-12 . .'.. . MITSUBISHI

ELECTRIC
ML3XX1 SERIES
II Forward current va. voltage Fig. 4 Forward current vs. voltage

Typical forward current vs. voltage characteristics are 40
shown in Fig.4. In general, as the case temperature

rises, the forward voltage VF decreases slightly against
~ 30
the constant current IF. VF varies typically at a rate .§
of - 2.0mV/oC at IF = 1mA. ..!!o
E
20
~
:J
U
Tc=50C
"E
...E
0
10
"'") "" 25'C
a
o 1.0 2.0
Forward voltage VF 01)
II Optical output dependence of emission spectra Fig. 5 Emission spectra under CW operation
Typical emission spectrum under CW operation are
Tc = 25"C
shown in Fig.5. In general, at an output of 3mW, single
mode is observed. The peak wavelength depends
on the operating case temperature and forward
current (output level).
Xl 3mW
X1.6 III 2mW
X16 ..dII lmW
X16 Ith
840 850 860
Wavelength A (nm)
m Temperature dependence of peak wavelength Fig . 6 Temperature dependence of peak wavelength

813
A typical temperature dependence of the peak
Po=3mW I
wavelength at an, output of CW, 3mW is shown in

Fig.6. E 812
shifts to the long wavelength side at a rate of
5
81 1
,-
about O.25nm/oC typical. .t:
a;
j
., 810 r- l-1
~
1."'" 809
/
808
~
25 30 35 40
• MITSUBISHI
..... ELECTRIC 2 -13
MITSUBISHIl.ASER DIODES
ML3XX1 SERIES
Fig. 7 Far-field patterns

I Far-field pattern in plane parallel to heterojunctions ell
ML3XX1 oscillates in the standard transverse mode 1.0
9"
have a typical emitting area(size of near-field pattern)
0
of 2.2 x 0.8.u m'. Fig.7 and Fig.8 show typical farfield "-
'0.
:5
radiation patterns in "parallel" and "perpendicular"
'0:5
planes. ~ 0.5
.r;
The full angles at half maximum points (FAHM) g
are typically 11 0
and 30 0 •
'"
.2
~
a::
0
-30 30
Off- axis angle (deg.)

in plane perpendicular to heterojunctions e .L
1. 0,---...,----;..,..---.,.---,
8.L
0
"-
'5
S:J
0
1: 0.5
~
'>"
~
a::"
-30 0
m Pulse response waveform Fig. 9 Pulse response waveform

In the digital optical transmission systems. the response
waveform and speed of the light output against the input
current pulse waveform is one of the main concerns.
In order to shorten the oscillation delay time. the
current. Figure 9 shows a standard response waveform
obtained by biasing ML3XX1 to Ith and applying
a square pulse current (top of Fig. 9) up to 3mW.
A quick response is obtained with rising and falling
times being 0.3ns and O.4ns typical respectively.
o 2 3 5
Time (nsec.)
• MITSUBISHI
2 -14 "ELECTRIC
ML3XX1 SERIES
FOR OPTICAL INFORMATION SYSTEMS·
The laser diodes emit beams from both of their 4
beam since the rear beam is proportional to the ~
L
front one. Fig.10 shows an example of light
output vs monitoring photocurrent characteristics.
.§
2
/
When the front baeam output is 3mW, the monitor
output becomes O.3mA. V
1/
o
o 0.1 0.2 0.3 0.4 0.5
Monitoring output. 1m (mA)
1m Polarization ratio vs. light output characteristic Fig. 11 Polarization ratio vs. light output
The main polarization of ML3XX1 is made in the 100
direction paraliel to the active layer. Polarization
ratio refers to the intensity ratio of the light -i 80
polarized in paraliel to the active layer to the light
polarized in perpendiculat to it. Figure 11 shows
Q.
~
Q.
60
/v
the standard polarization ratio vs. total light output
characteristic.
.2
1!
c; ./
V
-0 40
The polarization ratio increases with the light power.
:~ V
.!!! /
~ 20
o
o 2 3 4
Light output, Po (mW)

• Impeda~ce characteristics
Typical impedance characteristics of the ML3XX1, with
lead . lengths of 2mm, is shown in Fig.12 with the
bia~ currents as the parameter. Test frequency is swept
from 100MHz to 1300MHz with 100MHz steps.
Above the threshold current, the impedance of
the ML3XXl is nearly equal to a seriel! connection
of a resistance of 50hm and an inductance of
5nH.
--,.x---Iop
•. -MlTSUBlsHI
..... ELECTRIC 2-15
ML3XX1 SERIES
III Astigmatic distance Fig. 13 Astigmatic distance

in the parallel and perpendicular direction with the
•
\
P o =3mW CW
E \
"'" ," NA=O.
,I
7
laser beam. This distance between the two points
...
'l.
~
" ,I ,
is the astigmatic focal distance. Therefore, when " , ,,
~ , ,
the laser beam is focused, there is a difference in :2
, ,
'II , Parallel
;:
\",\ .: ~direction
~ 5 ,
• .........~ :. '7- -"Perpendicular

to converge the beam spot to the diffraction limit. ::;;
The typical astigmatic focal distance at NA = 0.7 of .~
ML3XXl is shown in Fig.l 3.
The LD position which minimizes the horizontal
00.
r.n
- • direction
I
Astigmatic
1--<0 I--distance 1.2/.t m
and vertical spot diameters is obtained. The o
astigmatic distance is the difference in moved o 10 20 30
distances thus .obtained. LD moving distance (/.t m)
.•.. MITSUBISHI
2 -16 . . . . B.ECTRIC
ML4XX2 SERIES
TYPE ML4012N, ML41 02, ML4402,

NAME
ML4412N, ML4442N .
ML4XX2 is an AlGa As semiconductor laser which • Single longitudinal mode
provides a stable, single transverse mode oscillation • Low threshold current, low operating current
with emission wavelength of 780 nm and standard • Built- in monitor photodiode
light output of 3mW. • High reliability, long operation life
ML4XX2 uses a hermetically sealed package
incorporating the photodiode for optical output APPLICATION
monitoring. This high - perfomance, highly reliable, Audio compact disk player, laser beam printer,
and long -life semiconductor laser is suitable for optical distance meter, Bar code reader, optical
such applications as optical disk reading and alignment
optical information processing.

CW 5
Pulse (Note 1) 6
VRD Reverse voltage ( Photodiode) - 15 V
Tc Case temperature - - 40-+ 60 'c
Tstg Storage temperature - - 55-+ 100 ~C
Note 1: Duty less than 50 %, pulse width less than 1 /L s.
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc = 25 'C)

Limits
Min. Typ. Max.
Vop Operating voltage CW,Po-3mW - 1.8 2.5 V
1/ Slope efficiency CW.Po-3mW - 0.3 - mW/mA
AP Peak wavelength CW,Po-3mW 765 780 795 nm
() II Beam divergence angle (parallel) CW,Po=3mW 8 11 15 deg.
()J. Beam divergence angie (perpendicular) CW,Po-3mW 20 33 45 deg.
Monitoring output current CW, Po = 3mW, VRD = 1V.
1m 0.15 0.35 0.7 mA
(Photodiode) RL= 10 Q (Note 2)
ID Dark current ( Photodiode) VRD -10V - - 0.5 /LA
Ct Total capacitance ( Photodiode) VRD - OV. f - 1MHz - 7 pF
Note 2 . RL IS load resistance of the photodlode.
• MITSUBISHI
. . . . ELECTRIC 2-17
ML4XX2 SERIES
OUTLINE DRAWINGS
O. 4 ~g. \' 2. O(P. C. 0 ) Dimensions in mm
R
00
+1
". (3)
ffP-===!=0 ase
I; II
PD S LD
(2) (1)
M~+--t±i-:=
Mo
N+I
i-F=Ti=;=~+- Reference plane
'''0
..:+1
+1
o
c..:
Dimensions in mm
(3)
~
.s.
II II
PD S LD
(2) (1)
19 :!:8. 03 Dimensions in mm
Reference slot
ro
o
~
;f!..--'---+-"_",
Reference ..;;;:
plane
+1
o 3 - if> 0.45 ± 0.05
c..: p.e.D. if> 2.54
(1 )(3)(2)
. • MITSUBISHI
2 -18 "-ELECTRIC
ML4XX2 SERIES
Dimensions in mm
MAX.~ 7.6
~6.4
Reference slot
PD A· (3)
1/
S
S
•
1/
LD
(2) (1)
3- ~ 0.45 ± 0.05
p.e.D. ¢ 2.54
(1)(3)(2)
¢ 9 ::t::g. 03 Dimensions in mm
gs
d
+1
'{j .-------j---.~
Reference slot
PD
A II
(2)
(3)
S
'S.
(1)
II
LD
Reference ~ l---r"---rr---'
plan. r::-l---'-----mrW-lIr---'
•.. MITSUBISHI
. . . . ELECTRIC 2 -19
'.,., ,
ML4XX2 SERIES
Typical light output vs. forward current charac- 5
teristics are shown in Fig.1. The threshold current
for lasing is typically 30mA at room temperature.
Beacause Ith and slope efficiency "1/ (dPo/dIF) is E
temperature dependent, obtaining a constant output :3
temperature Tc or the laser current. (Control the o~ __ -=~~ __ __-L__
~ ~
case temperature or laser current such that the o 80 100
output current of the built-in monitor PO becomes

constant.)
I Temperature dependence of threshold current (lth) Fig. 2 Temperature dependence of threshold current
temperature To of the threshold current is typically 50
- ---
140K in Tc;:;;;60"C, where the definition of To is Ith <
§ 40
ex: exp (Tc/To) .E ~
30
E
~
::J
U
20
~
..c:;
til
I!!
..c:;
I-
10
20 30 40 50 60 70

efficiency "1/- is shown in Fig.3. The gradient is
- O.0014mW/mA/"C. <E 0.4
~
§
'"?;
c -r---
.iI!
.11 ~
i 0.3
.
~
Q
20 30 40 50
'" 60 .70
2-20
ML4XX2 SERIES
I Forward current va. voltage Fig, 4 Forward current vs. voltage

are shown in Fig. 4. In general, as the case
:( 30
slightly against the constant current IF. VF varies -5
ty'picallY at a rate of - 2.0mV/"C at IF = , mA. .,!!,
E
20
§
TC=50~
""E
~ 10
~
1.0
J 25"C
2.0
Forward voltage VF (V)
I Optical output dependence of emission spectra Fig. 5 Emission spectra under CW operation
Typical emission spectra under CW operation are
Te = 25"C
shown in Fig.5. In general, at an output of 3mW,
forward current (output level),
Xl 5mW
X2 3mW
X20 j lmW
X20 Ith
770 780 790
Wavelength .l. (nm)
IDTemperature dependence of peak wavelength Fig. 6 Temperature dependence of peak wavelength

Po = 3mW
wavelength at an output of CW, 3mW is shown in
Fig.6.
E 784 J
-5
0- ~
"".<: 783
about O.26nm/"C typical. 1»
c:
J!
CD
> 782
r-
)'
~
""~ 78 1 ..-
780
lr
25 30 35 40
Case temperature Te ("C)
2- 21
ML4XX2 SERIES
Fig. 7 Far- field patterns in plane

I Far - field pattern parallel to heterojunctions 81/
811
have a typical emitting area (size of near- field
~
V- 5mW
pattern) of 2.1 x 0.7 fJ. m'. Fig.7 and Fig.S show
'5Q
typical far-field radiation patterns in "parallel" and '5o
"perpendicular" planes.
The full angles at half maximun points (FAHM)
Reflected light
from monitoring
v 3mw
photoiode
are typically 11· and 33·
\
~tlmW
-30
IWY o 30
Off-axis angle (deg.)

perpendicular to heterojunctions 8.L
'5
S:>
o
II Pulse response waveform Fig. 9 Pulse response waveform

In the digital optical transmission systems. the
the main concerns.
5l
laser diode is usually biased close to the threshold c
current since the delay time is a time for charging j
the junction up to the threshold current. Figure 9
shows a standard response waveform obtained by
biasing ML4XX2 to Ith and applying a square pulse
current (top of Fig.9) up to 5mW. A quick response
is obtained with rising and falling times being
O.3ns and O.4ns typical respectively.
Time (nsec.)
2-22
'. . MITSUBISHI
..... ELECTRIC
ML4XX2 SERIES
II Light output vs. monitoring output characteristic Fig. 10 .Light output vs. monitoring output current
mirror surfaces. front and rear surfaces. The rear
,5
/
L
front one. Fig.10 shows an example of light 0
0..
L
output vs. monitoring photocurrent characteristics.
When the front beam output is 3mW. the monitor
S
<>
S0
2 L
output becomes 0.3 mA. .E
.2'
..J
/
/
0.2 0.4 0.6
Monitoring output 1m (mA)
lID Polarization ratio vs. light output characteristic Fig. 11 Polarization ratio vs. light output
The main polarization of ML4XX2 i.s made in the 200
ratio refers to the intensity ratio of the light , 150
v
polarized in parallel to the active layer to the light 0..
~
polarized in perpendicular to it. Figure 11 shows a::
the standard polarization ratio vs. total light output .2
~ 100
V
characteristic. c:
.2
The polarization ratio increases with the light 1;;
.!::!
power. li0 50
0..
/
2 4 6
Light output Po (mW)
Fig. 12 S/N vs. optical feedback ratio

II SIN vs. optical feedback ratio f=20kHz, BW=300Hz, T c=25-50'C
S/N vs. optical feedback ratio. where the freQuency 70r-r-----~r------,-------,
is 20kHz and the bandwidth is 300Hz is shown in

Fig.12. 80~~------~----~-------;
That where the freQuency is 10MHz and the

bandwidth is 300kHz is shown in Fig.13. ~
.....
90~~.~~..-... --~------~------;
The S/N value is the worst value obtained at --C>--lmW
z ~ /""'--. ~::-
case temperatures of 25"C to 50 "C.
~ 100
...: :.-::::w- .-0-=10, .:..:::::::lil. --...[J.·-2mW
...~;*':-::~~~.:.~:::v ·.. -<>-..-3mW
--&-4mW
11 0 ~+-------t------~~-----i ....•.. - 5mW
120~~~ ______~____~~____~
o 0.01 0.1 10
• MITSUBISHI
. . . . ELECTRIC 2-23
ML4XX2 SERIES
Fig. 13 S/N vs. oPtical feedback ratio

f=10MHz, BW=300kHz, T c =25-50'C
50
60~~----~------t------i
---O--lmW
---Q--2mW
-"-<)-"-3mW
90'1-+----t----t-------j- -Cr -4mW
·---.---5mW
10014J--L----::.I..:----~--___710
o 0.01 0.1
III Astigmatic focal distance Fig. 14 Astigmatic focal distance

Po-3mW CW
I
in the parallel and perpendicular direction with the I ;NA=0.7
I
,,
I
laser beam. This distance between the two points I
I
is the astigmatic focal distance. Therefore, when ,
I
,
, , I, ~pendiCUlar
.
the laser beam is focused, Terefore, when the laser , ~ direction
,~
beam is focused, there is a difference in focal 5

I',
, ,
-wi.". .
•,, -~~,:~t
point in the two directions, making it difficult to ,
,
converge the beam spot to the diffraction limit. parallel'
direction
of ML4XX2 is shown in Fig.14.
'I'" Astigmatic
distance 5.6 fJ. m
The LD position which minimizes tlie horizontal 0
-I I
and vertical spot diameters is obtained. The o 10 20 30
astigmatic distance is the difference in moved LD moving distance (fJ. m)

distances thus obtained.
• MITSUBISHI
2-24 .... ELECTRIC
ML4XX2A SERIES
TYPE
NAME ML4102A, ML4402A, ML4412A
ML4XX2A is an AIGaAs semiconductor laser which .Low noise
provides a stable, single transverse mode oscillation • Built- in monitor photodiode
with emission wavelength of 780nm and standard • High reliability. long operation life
light output of 3mW. • Multiple longitudinal mode
monitoring. This high - performance, highly. reliable, Reading memory disk. video disk player, data link
and long - life semiconductor laser is suitable for
such applications as optical disk reading and
optical information processing.

CW 5
Pulse (Note 1) 6
VRO Reverse voltage ( Photodjode) - 15 V
IFo Forward current ( Photodiode) - 10 mA
Tc Case temperature - -40-+60 "C
Tst; Storage temperature - -55-+ 100 "C
Note 1: Duty less than 50 96, pulse width less than 1 p. s.
ELECTRICAUOPTICAL CHARACTERISTICS (Tc = 25 "C)

Limits
Min. Typ. Max.
lop Operating current CW,Po=3mW - 50 70 mA
Vop Operating voltage CW,Po-3mW - 1.8 2.5 V
1/ Slope efficiency CW,Po =3mW - 0.32 - mW/mA
). P Peak oscillation wavelength CW,Po=3mW 765 780 795 nm
(JII Beam divergence angle (parallel) CW,Po =3mW 8 11 15 deg.
(JL Beam divergence angle (perpendicular) CW,Po-3mW 20 33 45 deg.
1m Monitoring output current CWo Po = 3mW. VRO = 1V.
0.15 0.4 0.7 mA
( Photodiode) RL = 10 Q (Notel)
10 Dark current ( Photodiode) VRD-10V - 0.5 p.A
Ct Total capacitance (Photodiode) VRD - OV, f -1MHz - 7 - pF
Note 2: RL is load resistance of the Photodiode.
. •. ' MITSUBISHI
. . . . B.ECTRIC. 2-25
ML4XX2A SERIES
OUTLINE DRAWINGS
Dimensions in mm
PO AI!
II
(2)
(3)
S
a••
(1)
. LO
~ Reference
plan.
Dimensions in mm
~if
Reference slot
PO S LO
0 0 ~-
(2) (I)
K~
+1
..."'
.:}
Reference
plane
,J T
+
o
1 3- ¢o. 45±0.05
p.e.D. ~ 2.54
(1)(3)(2)
fie ~g.03 Dimensions in mm
(3)
Reference slot
hI!
PO,S,LO
(2) (1)
(1)(3)(2)
•. MrrsuBlsHl·
2-26 .... B.ECTRIC
ML4XX2A SERIES
I Light output vs. forward current Fig. 1 Light output VS. forward current
Typical light output vs. forward current 5
characteristics are shown in Fig.l. The threshold f I
current for lasing is typically 40mA at room
temperature. Above the threshold, the light output
4O"C,
increases linearly with current, and no kinks are
~
observed in the curves. An optical power of about
20"C Tc;,=60"C
3mW is obtained at Ith + 10mA. 2
Because Ith and slope efficiency 11 (dPo/ dlF) is
temperature dependent, obtaining a constant output
1:
'"
:.J
'\
1
temperature Tc or the laser current. (Control the ) j )
case temperature or laser current such that the 20 40 60 80
output current of the built-in monitor PD becomes

Forward current IF (mA)
constant.)
ElTemperature dependence of threshold current(lth} Fig. 2 Temperature dependence of threshold current

current is shown in Fig.2. The characteristic To of
the threshold current is typically 140K in T c;:;; 70°C, <--.5 70
where the definition of To is Ith ex: exp (Tc/To)

.E
E
~
""
:s!
50
30
- ~ - - I----
0
.c
co
2! 20
.c
I-
10
20 30 40 50 60 70
Fig. 3 Temperature dependence of slope efficiency

I Temperature dependence of slope efficiency
A typical temperature dependence of the slope 0.4
efficiency 11 is shown in Fig.3. The gradient is
- 0.001 mW/mA/oC <-E
"-
3:
r-- r--
-.5
.,
>- 0.3
r-- r---.......
'"
"
c:
.S!
.11
:::.,
.,0.
.2
rJl
0.2
o 10 20 30 40 50
• MITSUBISHI
~B.ECTRIC 2-27
ML4XX2A SERIES
II Forward current vs. voltage Fig. 4 Forward current vs. voltage

slightly against the constant current IF. VF varies :? 30
typically at a rate of - 2.0mV/'C at IF = 1mA.

.s
.!:
E 20
~
::J
TC=50~
'E" 25"C
~ 10
j
j
0
u.
o
o 1.0 2.0
&I Optical output dependence of emission spectra Fig. 5 Emission spectra under CW operation
Tc = 25'C
shown in Fig.5. Generally, at the output of about
3mW, the laster oscillates in the multi-mode; when
the output is raised to about 5mW ,it begins
oscillating in the single mode. The peak wavelength
forward current (output level). Xl 5mW
X6.3 ...J 3mW

X80 .. 1I11ll~ lmW
X80 Ith
771 781 791
Wavelength ,l. (nm)
iii Temperature dependence of peak wavelength Fig. 6 Temperature dependence of peak wavelength
A typical temperature dependence .of the peak 785
Po=3mW
wavelength at an output of CW 3mW is shown in
Fig.6. E 784
As the temperature rises, the peak wavelength ..5
0.
""
.c
783 /
about O.25nm/oC typical. 0,
c:
,/
.lI!
Q)
> 782 L
lV/ /'
~
'"~ 78
780
25 30 35 40
' . MITSUBISHI
2-28 ..... ELECTRIC
ML4XX2A SERIES

I Far-field pattern in plane parallel to heterojunctions 81/
ML4XX2A oscillates in the standard transverse
8 II
mode (TEoo) regardless of the optical output level.
They have a typical emitting area (size of near-field
pattern) of 2.1 f.l rn'. Fig.7 and Fig.8 show typical far-field ~
radiation patterns in "parallel" and ·perpendicular" "

Co
'5o
planes. Reflected light
The full angles at half maximum points (FAHM)
are typically 11 0 and 33 0 •
lmW
30

in plane perpendicular to heterojunctions 8.l
o
C.
"
Co
'5o
Off - axis angle (deg.)
iii Pulse response waveform Fig. 9 Pulse response waveform

response waveform and speed of the light output InpUj pulse
the main concerns.
Generally. the laser diode is biased up to near the
21c:
threshold current to minimize oscillation delay time. o
Co
Figure 9 shows a standard response waveform ~

obtained by biasing ML4XX2A to Ith and applying
a square pulse current (top of Fig.9) up· to 3mW.
The rise time and the fall time in Fig.9 are typically
O.3ns and O.4ns. They are limited by response
speed of the detecter.
Time (nsec.)
• MITSUBISHI
;"ELECTRIC 2 -29
ML4XX2A SERIES
The laser diodes emit beams form both of their 5
beam can be used for monitoring power of front 4 L
~
beam since the rear beam is proportional to the
front one. Fig.10 shows an example of light output
.5
£ 3 LL
vs monitoring photocurrent characteristics. When
the front beam output is 3mW. the monitor output
becomes O.4mA.
~
;"
C>
.E
2
V
/
.2'
~
1 L
V 0.2 0.4 0.5
The main polarization of ML4XX2A is made in the 200
ratio refers to the intensity ratio of the light -i
polarized in parallel to the active layer to the light Q. 150
~
polarized in perpendicular to it. Figure 11 shows the
standard polarization ratio vs. total light output
0:
L
V
characteristic.
The polarization ratio increases with the light
power. 0
/
1 V
0
o 2 4 6
Fig. 12 Impedance characreristics

_Impedance characteristics
Typical impedance characteristics of the ML4XX2A.
with lead lengths of 2mm. and shown in Fig.12
with the bias currents as the parameter.
Test frequency is swept from 100MHz to 1300MHz
with 100MHz steps.
• .MITSUBISHI
2-30 ...... ELECTRIC·
ML4XX2A SERIES
Fig. 13 S/N vs: optical feedback ratio

111 SIN optical f,edback ratio
VB. f=20kHz. BW=300Hz. T c=25-50°C
S/N vs optical feedback ratio, where the frequency 70rT-------r------,-----~

Fig.13. 80
That where the frequency is 10MHz and the
bandwidth is 300kHz is shown in Fig.14.
The S/N value is the worst value obtained at --C>--lmW
z ---Q·-2mW
case temperatures of 25"C to 50 "C. UJ 100
···-<)-··-3mW
--l::r-4mW
110 H - - - - - + - - - - - + - - - - I ..... --- 5mW
120~~~~~~~~~~~~-+~
o 0.01 0.05 O. 1 0.2 0.5 1 2 5 10

f=10MHz, BW=300kHz, Tc=25-50°C
50rT-------r------,-~~~
--C>--lmW
80 ---Q'-2mW
'''-<)-''-3mW
--l::r-4mW
901-+----+----+-----l·_·.•.. _5mW
100~~~--~-L~--L-~~--~.
o 0.01 0.05 O. 1 0.2 0.5 1 2 5 10

, Po=3mW CW
in the parallel and perpendicular direction with laser \ ;NA=0.7
beam. This distance between the two points is the E \
\ I
I
::t \ I
astigmatic focal distance. Therefore, when the laser
~
,
2 ,,
, I
beam is focused, there is a difference in focal :2 perpendicular

, ) ... direction
~ " "1, ....
point in the two directions, making it difficult to ,
5 ,
~ ·0
'.'\-'"
•,, '~~l
converge the beam spot to the diffraction limit. 0
0
0
The typical astigmatic focal distance a.t NA = 0.7 parallel

.~
I/)
0
~ direction
of ML4XX2A is shown in Fig.15. 0Q. "If'"
The LD position which minimizes the horizontal en Asti9mtc distance 5.6 Il m
and vertical spot diameters is obtained. The o I I
distances thus obtained. LD moving distance (Il m)
• MITSUBISHI
. . . . ELECTRIC 2-31
ML4XX3 SERIES
TYPE ML4403, ML4403R, ML4413N,

NAME
ML4413C
ML4XX3 is an AIGaAs semiconductor laser Which • Single longitudinal mode
provides a stable, single transverse mode oscillation • Low threshold current, low operating current
with emission wavelength of 780nm and standard • Built- in monitor photodiode
light output of 3mW. • High reliability, long operation life
ML4XX3 uses a hermetically sealed package .Low droop
incorporating the photodiode for optical output
monitoring. This high- performance, highly reliable, APPLICATION
and long -life semiconductor laser is suitable for Laser beam printer
such applications as laser beam printers.

CW 5
Pulse (Note 1) 6
Tc Case Temperature - - 40-+ 60 'c
T5,g Storage temperature - - 55-+ 100 'C
Note 1: Duty less than 50 %. pulse width less than 1 !.l s.
Limits
Min. Typ. Max.
lop Operating current CW.Po=3mW - 50 85 mA
Vop Operating voltage CW.Po=3mW - 1.8 2.5 V
17 Slope efficiency CW.Po-3mW - 0.15 - mW/mA
AP Peak wavelength CW.Po-3mW 765 780 795 nm
ell Beam divergence angle ( parallel) CW. Po = 3mW 8 11 15 deg.
e.'- Beam divergence angle (perpendicular) CW.Po =3mW 20 33 45 deg.
1m 0.4 1.0 2.0 mA
( Photodiode) RL = 10 Q (Note 2)
ID Dark current ( Photodiode) VRD = 10V - - 0.5 JlA
C, Total capacitance ( Photodiode) VRD = OV. f = 1 MHz - 7 - pF
Note 2. RL IS load resistance of the photodlode.
•. MITSUBISHI
2-32 "ELECTRIC
ML4XX3 SERIES
OUTLINE DRAWINGS
A
Dimension in mm
MAX.¢ 7.6 (3) Case
¢6.4
II II
PD S LD
(2) (1)
Reference slot
ML4403
~ (3)
+1
fI+~
Reference ~-r------f-"""'''"''''
plane ~ t---r"---,...,---'
PDS LD
-
+1
to-
3 - ¢ 0.45 ± 0.05
(2) (1)
P.C.D. ¢ 2.54
ML4403R
(1 )(3)(2)
Dimensions in mm
o
MAX.¢ 7.6
PD
A(2)
II
(3) Case
S.
(1)
II
LD
8:g -~~k~::;;;::~~C---~ Reference slot ML4413N

OJ ":
~ 0
~ ~
(3)
+1 0t===FIfi==I==='il
(1 )(3)(2)
3 - 1> 0.45 ± 0.05
P.C.D.1> 2.54
PD
A
(2)
-1
ML4413C
S ase
(1)
1/
LD
' . ELECTRIC
..... MITSU.BlSHI . , 2 - 33
ML4XX3 SERIES
a Light output vs forward current
Typical light output vs. forward current charac-
Fig. 1 Light output vs. forward current
5
teristics are shown in Fig.l. The threshold current
Above the threshold, the light output increases ~
.5
linearly with current, and no kinks are observed in ~ 3~----~----~~~+-r-~
the curves. An optical power of about 3mW is S
0. 20"C
obtained at Ith + 15mA. . ~ 2 ~----t-----"~H-+----clc-------l
Because Ith and slope efficiency T/ (dPo/ dlF) is
constant.)
I Temperature dependence of threshold current(lth) Fig. 2 Temperature dependence of threshold current

A typical temperature dependence of the threshold
--
70
current is shown Fig.2. The characteristic temperature 60
---
To of the threshold current is typically 130K in 50
---
Tc:;; 60°C, where the definition of To is Ith oc exp :(
40
.5
(Tc/To)
2 30
E
~
:;
u
20
'C
..
'0
.s:
~
.s:
t-
10
o 20 40 60
I] Temperature dependence of slope efflclenty( T/ 0) Fig. 3 Temperature dependence of slope efficiency

efficiency T/ is shown in Fig.3. The gradient is
- O.0005mW/mA/oC.
>
:~
~
~
&
0.2
------
O. 1 0 20 40 60
'.MITSUBISHI
2-34 ;"ElECTRIC
ML4XX3 SERIES

are shown ing Fig.4; In general, as the case
<
§ 30
slightly against the constant current IF, VF varies
.!:
typically at a rate of - 2.0mV/"C at IF = 1mAo
E T c =50"C"
~:J 20
(J
"E
~
0
u. 10
} 25°C
1.0 2.0
II Optlca,1 output dependence of emission spectra Fig. 5 Emission spectra under CW operation
shown in Fig.5. In general, at an output of 3mW.
Xl 5mW
X1.6 3mW
X6.3 lmW
X16 .... Ith
778 788 798
Wavelength ~ (nm)
I Temperature dependence of peak wavelength Fig. 6 Temperature dependence of peak wavelength

Po=3mW
wavelength at an output of 3mW is shown in Fig.6.
As the temperature rises, the peak wavelength E 785
L
shifts to the long wavelength side at a rate of .5
V
c:_
Q
about O.26nm/"C typical. ""' 784

.J
.s::
1
C,
783
1 782 ~
78 1
25 30 35 40
• MlTSUBlSHI
. . . . ELECTRIC ? - ."1"
ML4XX3 SERIES

I Far-field pattern in plane parallel to heterojunctions 8/1
8/1
(TEoo) regardless of the optical output levle. They
have a typical emitting area (size of near- field i'-5mw
pattern) of 2.1 J,lm'X 0.7 J,lm'. Fig.7. and Fig.8 show

typical far- field radiation patterns in "parallel" and ~
::J
o Reflected light
"perpendicular" planes. from monitoring
photodiode :"- 3mW
LP
\~lmw
-30 o 30

perpendicular to heterojunctions 8.L
s
S::J
o
m Pulse response waveform Fig. 9 Pulse response waveform

Pulse drive
response waveform and speed of the light output current
against the input current pulse waveform is one of I
tf=250ps
the main concerns.
In order to shorthen the oscillation delay time,
3lc
the laser diode is usually biased close to the o
threshold current since the delay time is a time for I
charging the junction up to the threshold. Figure 9
t,=220
biasing ML4XX3 to Ith and applying a square pulse
current (top of Fig.9) up to .3mW. The rise time
and the fall time in Fig.9 are typically 0.3ns and 5
0.4ns, respectively. Time (nsec.)
' ..... MITSU.·.BlSHI

2- 36 I!T&ELECTRIC
ML4XX3 SERIES
II Light output vs. monitoring output characteristic Fig. 10 Light output vs. monitoring· output current
The laser diodes emit beams form both of their 5
beam can be used for monitoring power of front 4 /
front one. Fig.'O shows an example of light output
~
5
0 3 V
~
"-
vs. monitoring photocurrent characteristics. When 5Q
the fornt beam output is 3mW, the monitor output 50 2
becomes l.OmA. E V
3 1 /
a
a
V 0.5 1.0 1.5
II Polarization ratio vs. light output characteristic Fig. 11 Polarization ratio vs. light output
ratio refers to the intensity ratio of the light
polarized in parallel to the active layer to the light
-i
"- 150
v "..-
polarized in perpendicular to it. Figure " shows the

standard polarization ratio vs. total light output
"-
ii:
.2 /
/
ec: 100
characteristic.
0
:~ L
I
1ii0 50
"-
a
o
/ 2 3 4 5
II Astigmatic distance Fig. 12 Astigmatic distance

There seems to be a difference in luminous point
:T'
10 Po -3mW CW
.,,..
in the parallel and perpendicular direction with the E
laser be.am. This distance between the two points ::t
'-'
~
is the astigmatic focal distance. Therefore, when ~
the laser beam is focused, there is a difference in 1 \
. • perpendicular ,
\
focal point in the two directions, making it difficult ~ .~, I direction ,,'
5 , ,,
to converge the beam spot to the diffraction limit. C ,
- t
~, -
\
f-~~ ~arallel
.~
III
0Q
I/)
.'-.1'
,
-0-
' direction
Astigmat~ ts;anoe 3.6 ill m

and vertical spot diameters is obtained. The a
astigmatic distance is the difference in moved a 10 20 30
distances thus obtained. LD moving distanoe (il m)
• MITSUBISHI
. . . . ELECTRIC 2-37
ML4XX3 SERIES
III Wave front distortion characteristics Fig. 13 Wave front distortion

Typical wave ·front distortion (mainly astigmatism) RMS: O. 030
of ML4XX3 is shown in Fig.l 3. This figure shows Po=3mW CW
NA=0.28 P-V:
0 213
.
wave front (phase front) when laser beam is
collimated. "o~
.- >
Various aberrations are calculated by Zernike's ~ 'ii
~j
polynomaial approximation for the interference .5
fringes observed by the Mach-Zehnder interferometer.
0.001
-0.052
-0.105
-1.0 -0.5 0.0 0.5 1.0
parallel direction
• Droop Fig. 14 Droop

Droop characteristics indicate the amount which Po
optical light output is down by heating up when
<mW)JpA _fB
constant pulse current is loaded on LD. 0'~"1=~=F=+:::~:ij!-~/:j:::+::j:=~
3 190- - _.. --.- -_. -
Definition is follows.
PA - Ps
tlP= x 100 (%)
Ps
PA: Initial value of monitoring current at 10% duty

10 .
pulse. (600Hz)
Ps : Final value of monitoring current at 90 % duty
°i~~~~-±~-+-r~~
pulse. (600Hz) 6.P=6.0%
0.333ms/div
Typical droop characteristic of ML4XX3 is shown
in Fig.l 4. Typical droop value is 6 % at PA = 3mW.
. BISH.I
2 - 38 ....
"
ELECTRIC
MITSU.
ML4XX5 SERIES
TYPE
NAME ML4405, ML4445N
ML4XX5 is a visible light AIGaAs semiconductor • Low threshold current, low operating current
laser which provides a stable, single transverse mode • Built- in monitor photodiode
oscillation with emission wavelength of 750nm and • High reliability, long operation life
standard light output of· 3mW.
ML4XX5 uses a hermetically sealed package APPLICATION
incorporating the photodiode for optical output Bar code reader, laser beam printer
monitoring.
This high- performance, highly reliable, and long-
life semiconductor laser is suitable for such
applications as the light sources for a bar code
readers and printer.

CW 5
Pulse (Note 1) 6
Tc Case Temperature - -40-+60 'C
Tstg Storage temperature - -55-+ 100 °c
Note 1: Duty less than 5096, pulse width less than 1 /1. s.

Limits
Min. Typ. Max.
lop Operating current CW, Po=3mW - 45 80 mA
Vop Operating voltage CW,Po=3mW - 2.0 3.0 V
T/ Slope efficiency CW,Po=3mW - 0.3 - mW/mA
AP Peak wavelength CW, Po = 3mW 735 750 765 nm
8 II Beam divergence angle ( parallel) CW, Po = 3mW 8 11 15 deg.
8l. Beam divergence angle ( perpendicular) CW, Po = 3mW 20 33 45 deg.
Monitoring output current CW, Po = 3mW, VRD = 1V,
1m 0.15 0.35 0.7 mA
CPhotodiode) RL= 10 Q (Note 2)
ID Dark current ( Photodiode) VRD-10V - - 0.5 /1. A
Ct Total capacitance ( Photodiode) VRD = OV, f = 1MHz - 7 - pF
Note 2: RL IS load resistance of the photodlode.
...• MITSUBISHI
..... ELECTRIC 2 - 39
ML4XX5 SERIES
OUTLINE DRAWINGS
~9 :!:8. 03 Dimensions in mm
MAX. 0.6
"6.4
Reference slot
.AS.
PO
I.!
(3)
S
II
LO
(2) (1)
tio
,..:
Dimensions in mm
Reference slot
PO A· (3) .
I.!
S
s•
II
LO
(2) (1)
2-40 ~El.ECTRIC. I
'. .MITSUBISH.
ML4XX5 SERIES
I Llgth output va. forward current Fig. 1 Light output VS. forward current
characteristics are shown in Fig.l. The threshold
current for lasing is typically 35mA at room 4
/1
increases linearly with current, and no kinks are /!~~~
observed in the curves. An optical power of about /F50Y;
3mW is obtained at Ith + 10mA. 2
Because Ith and slope efficiency 7J (dPo/ dlF) is
.E
.2'
..J
1
/'
temperature Tc or the laser current. (Control the j)
case temperature or laser current such that the 10 20 30 40 50 60

constant.)
II Temperature dependence of threshold current(lth} Fig. 2 Temperature dependence of threshold current

---
current is shown in Fig. 2. The characteristic 40
-
temperature To of the threshold current is typically :(
130K in Tc;:;; 50·C, where the definition of To is Ith §
30 ~
oc exp (Tc/T0) E
E
i!!
:; 20
u
'"'0.t:.
<II
i!!
.t:.
I-
10
20 30 40 50 60
Case temperature Tc (Y;)
I Forward current va. voltage Fig. 3 Forward current vs. voltage characteristics
temperature rises, the forward voltage VF decreases :( 30
slightly against the constant current IF. VF varies § T c = 5O OS
..!!o
typically at a rate of - 2.0mV/"C at IF = 1mA.
E
i!! 20
:;
u
lu.
0 10
) 25C
o
o 1.0 2.0
.' MITSUBISHI
..... ELECTRIC 2-41
ML4XX5 SERIES
Fig. 4 Far- field patterns in parallel and plane

II Far - field pattern perpendicular to heterojunctions
(TEoo) regardless of. the optical output level. They
have a typical emitting area (size of near- field
pattern) of 2.1 x 0.7 f.J, rrf. Fig.4 shows typical far- ~
50.
field radiation patterns in "parallel" and "perpendicular"
50
planes. 0.5
~
are typically 11 ° and 33 ° . .
:-
..
~
a:
0 60
II Emission spectra Fig. 5 Emission spectra under CW operation

shown in Fig.5. In general. at an output of 3mW.
Xl 5mW
X1.3 3mW
X15.8 .J lmW
X50 Ith
740 750 760
Wavelength A (nm)
[gTemperature dependence of peak wavelength Fig. 6 Temperature dependence of peak wavelength

P o -3mW
Fig.B. E 758
As the temperature rises. the peak wavelength -5
s=
756 J
,-~
about 0.20nm/oC typical. Sc
~
> 754
'"
;:
""n.:ll 752
1/
750
V
25 35 50 60
Case temperature Te ('C)
. 'MITSUBISHI
2-42 .... B.ECTRIC
ML4XX5 SERIES
I Light output vs. monitoring output characteristic Fig. 7 Light output VS. monitoring output current
mirror surfac~s, front and rear surfaces. The rear
beam can be used for monitoring power of front /
V
beam since the rear beam is proportional to the 3

V
vs. monitoring photocurrent characteristics. /
When the front beam output is 3mW, the
monitor output becomes 0.35mA.
2
/v
17
0.1 0.2 0.3 0.4 0.5
I Astigmatic distance Fig. 8 Astigmatic distance

There seems to be Ii difference in luminous point 10 P o =3mWCW
I
,, I'NA=0.7
E ,
", ,I
-3 . I
I ,, I
. I
,
the laser beam is focused, there is a difference in perpendicular
~V direction
to converge the beam spot to the diffraction limit. ~
5
"1"
• ..,- ..... ~~.'
'
.... ~~
:1 -
~ \
of ML4XX5 is shown in Fig.S. ..
.~ \
....~'
, ~ direction
The LD position which minimizes the horizontal 8.

CI) Astigmr~ distance 5.6 It m
and vertical spot diameters is obtaained. The I I I
o
astigmatic distance is the difference in moved a 10 20 30
distances thus obtained. LD moving distance (It m)
2-43
Ml4XX10 SERIES
TYPE,
NAME iML40110R
ML4XX10 is an AIGaAs semiconductor laser which • Built- in monitor photodiode
provides a stable. single transverse mode oscillation • High reliability. long operation life
with emission wavelength of 780nm and standard • Low noise
light output of 3mW.
ML4XXlO uses a hermetically sealed package APPLICATION
incorporating the photodiode for optical output Optical communication system (Data link)
monitoring. This high- performance. highly reliable.
and long-life semiconductor laser is suitable for
such applications as the light sources for an
optical communications including data link.

CW 5
Pulse (Note 1) 6
Tc Case Temperature - - 40-+ 60 -c
Tstg Storage temperature - - 55-+ 100 ·C
Note 1: Duty less than 50 %. pulse WIdth less than 1 11 S.
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc = 25 ·C)

Limits
Min. Typ. Max.
Ith Threshold current CW - , 45 60 mA
Vop Operating voltage (Laser diode) CW.Po-3mW - 1.8 2.5 V
1/ Slope efficiency CW.Po=3mW - 0.32 - mW/mA
.l. P Peak wavelength CW.Po=3mW 765 780 800 nm
8/1 Beam divergence angle ( parallel) CW.Po=3mW 8 11 20 deg.
81. Beam divergence angle (perpendicular) CW.Po-3mW 20 33 48 deg.
1m 0.15 0.4 0.7 mA
ID Dark current ( Photodiode) VRD -10V - - 0.5 fJ.A
Ct Total capacitance ( Photodiode) VRD - OV. f - 1 MHz - 7 - pF
Note 2: RL IS load resIstance of the photodlode.
• MITSUBISHI
2-44 ..... ELECTRIC
ML4XX10 SERIES
OUTLINE DRAWINGS
0.4 ~ g.l ~ 2.0 (p.e.D.) Dimensions in mm
x -00
+1
~ (3)
'--!J!.z::==+
"! .---±::::iI::±r::::i...:.L...i::::i
.,0
N +1
h'!==rF;=~~Reference plane
PO
A /;
(2)
S ase
(1)
II
LO
-
+1
~"--__ 0 . IT
~ 3 - 0.45 ~
(1) (3)(2)
2-45
ML4XX10 SERIES
DLight output vs. forward current Fig. 1 Light output VS. forward current
Typical light output vs. forward current charac- 5r---,----,---,rr-r.---,
for lasing is typically 45mA at room temperature. 4
Above the threshold, the light output increases. ~
-5
tE
the curves. An optical power of about 3rriW is ~
obtained at Ith + 8mA. ""

S0 2
Because Ith and slope efficiency 1/ (dPo/dIF) is .E0>
temperature dependent, obtaining a constant output :::;
case temperature or laser current such that the °0~---2~0~==4~0~~6~0----8~0~~100
constant.)
11 Temperature dependence of threshold current(lth}
--
Fig. 2 Temperature dependence of threshold curreJ:lt
--
60
-- -
50
f..--
temperature To of the thershold current is typically :(
170K in Tc~60"C, where the definition of To is Ith -5 40
.c
ex: exp (Tc/To).
1: 30
~::J
"
:l2 20
0
.s;;;
'~"
.s;;;
I-
10
20 30 40 50 60 70

efficiency 1/ is shown in Fig.3. The gradient is
- 0.001 mW/mA/oC. :( 0.4
E
"-
3:
-5
'"(';
c:
.II!
- r-- r--. ~.
,.11
~ 0.3
Q)
"
0
u;
20 30 40 50 60 70
•. MITSUBISHI
2-46 ..... ELECTRIC
ML4XX10 SERIES
I Forward current vs. voltage Fig. 4 Forward current vs. voltage characteristics
:( 30
slightly against the constant current IF. VF varies ,§
typically at a rate of - 2.0mV/"C at IF = 1rnA. .!!.
E Tc=50"C-
!! 20
:;
u
"E Tc=25"C-
~
0 10
u.
o
j
o 1.0 2.0
shown in Fig.5. Generally, at the output of about
3mW, the laster oscillates in the multi-mode; when
the output is raised to about 5mW, it begins
oscillating in the single mode. The peak wavelength
forward current (output levle).
Wavelength A (nm)
D'lTemperature dependence of peak wavelength Fig. 6 Temperature dependence of peak wavelength

P o .=3mW
Fig.6. E 784
As the temperature rises, the peak wavelength 5
shifts to the long wavelength side at a rate of '"
0.
783 /
about O.25nm/"C typical. '"0,c: V
~
~ 782 /"
~
""~ /V
78 1
780
V
25 30 35 40
'.' ELECTRIC
..... MITSUBISH.I 2-47
ML4XX10 SERIES
Fig. 7 Far- field patterns in plane parallel

I Far-field pattern to heterojuncticns 8//
ML4XX10 oscillates in the standard transverse
8/1
mode (TEee) regardless of the optical output level.
5mW
They have a typical emitting area (size of near-
field pattern) of 2.1 x 0.7 Il 01'. Fig.7 and Fig.S show
typical far-field radiation patterns in "parallel" and
"perpendicular" planes. /3mW
are typically 1.1 0 and 33 0 •
['<Vlmw
jY ~
-30 o 30
Fig. 8 Far- field patterns in plane perpendicular

to heterojunctions 8.L
:J
S:J
o
BJ Light output vs. monitoring output characteristic Fig. 9 Light output vs. monitoring output current
beam can be used for monitoring power of front 4 /
foront one. Fig.9 shows an example of light output
~
,5
0
<l.
/
vs monitoring photocurrent characteristics.
monitor output becomes O.4mA.
:;
C.
:;
0
.E
2
/
/
.2'
...J
1 /
V 0.2 0.4 0.6
Monitoring output Irn (rnA)
,. MIlSUBISHI
2-48 ..... ELECTRIC
ML4XX10 SERIES

I SIN va optical feedback ratio f=20kHz, BW=300Hz, Tc=25-50'C
S/N vs. optical feedback ratio. where the frequency 70~-------r------'-------'
is 20kHz and the bandwidth is 300Hz is shown in -100
Fig.10. 80
N
:r
......
And that where the frequency is lOMHz and the -110 III
-0
bandwidth is 300kHz is shown in Fig.ll. ~ 90~~=----1~--~~L-~L--i z
The S/N value (RIN value) is the worst value S -120 a:
z
obtained at case temperatures of 25"C to 50·C.
~ 100
--0--1mW
-130 ---0-- 2mW
_··<r··-3mW
110~-------+-------+-------;
--&-4mW
-140 . __ . • ___ 5mW
1200 '0.01 0.050.10.2 0.5 1 2 5 10
Optical feedback ratio Af (%)

lID Impedance characteristics f=10MHz, BW=300kHz, Tc = 25":' 50'C
Typical impedance characteristics of the ML4XX10.
with lead lengths of 2mm. are shown in Fig.12 -110
with the bias currents as the parameter. Test N
:r
frequency is swept from lOOMHz to l300MHz with -120 '-0iii
lOOMHz steps.
Above the threshold current. the impedance can
z
-130 a:
be approximated by a series connection of a
--0--1mW
resistance of 3.50hm and an inductance of 2.3nH.
-140 ---0-- 2mW
90~-------+-------+-------; ---<r---3mW
-150 --&-4mW
100~~~--~~~~~~~~~~
o 0.01 0.05 O. 1 O. 2 0.5 1 2 5 10
Fig, 12 Impedance characteristics
. .'... MITSUBISHI
ELECTRIC 2-49
ML4XX10 SERIES
• Astigmatic distance Fig. 13 Astigmatic distance

, Po =3mW CW
in the parallel and perpendicular direction with the \
\
:NA=0.7
laser beam. This distance between the two points E \ ,t
::t
~
\
, ,t
~
.c , ,
,, perpendicular
the laser beam is focused, there is a difference in :2;:
.. \ ...... .;V direction ,
focal point in the two directions, making it difficult 'Q, 5
-,,, - ...............-,t, -.-\....
,
"-
::::; ,
,, ,/ parallel direction
·1 --.,.-' I I
tiCo
The LD position which minimizes the horizontal VI Astigmatic distance 5.6 p m
and vertical spot diameters is obtained. The
o 110 -.l I I
astigmatic distance is the difference in moved o 20 30

LD moving distance (p m)
. • MITSUBISHI
2-50 .... ELECTRIC
ML4XX14 SERIES
TYPE ML44114N, ML44114C, ML44114R

NAME
ML40114N, ML40114R
ML4XX14 is an AIGaAs semiconductor laser which • Single longitudinal mode oscillation
provides a stable, single transverse mode oscillation • Short astigmatic distance
with emission wavelength of 780nm and standard • Low threshold current
light output of 3mW. • Built- in monitor photodiode
ML4XX14 is produced by the MOCVD crystal • High reliability, long operation life
growth method which is excellent in mass .Low droop
production and characteristics uniformity. This is a
high - performance, highly reliable, and long - life APPLICATION
semiconductor laser. Laser beam printer, digital copy

CW 5
Pulse (Note .1) 6
IFD Forward current (Photodiode) - 10 mA
Tc Case temperature - -40-+ 60 °c
Tstg Storage temperature - - 55-+ 100 °C
Note 1: Duty less than 50 %. pulse widty less than 1 fJ. s.

Limits
Min. Typ. Max.
Vop Operating voltage CWo Po=3mW - 2.0 2.5 V
T/ Slope efficiency CW - 0.25 - mW/mA
AP Peak wavelength CWo Po-3mW 765 780 795 nm
8 II Beam divergence angle ( parallel) CW, Po = 3mW 9 11 15 deg.
8J. Beam divergence angle (perpendicular) CW, Po=3mW 26 33 40 deg.
1m 0.25 1.0 2.0 mA
( Photodiode) RL= 10 Q (Note 2)
ID Dark current ( Photodiode) VRD = 10V - - 0.5 I1A
Ct Total capacitance ( Photodiode) VRD = OV. f = 1MHz - 7 - pF
. • MITSUBISHI
. . . . ELECTRIC ? - F\1
ML4XX14 SERIES
OUTLINE DRAWINGS
¢9~g.03
MAX.¢ 7.6
Dimensions in mm
PO
R II/;
(2)
(3)
S
ase
(1)
LO
ML44114N (3)
PDf~+~LD
.\--~~&.?-- Reference slot
(2) (1)
(3) ML44114C
"
(1) (3) (2)

3 - ¢ 0.45 ± 0.05
P.C.D. ¢ 2.54
PO
1/f
(2)
5
ML44114R
(I)
LO
0.4:': g.1 ¢ 2.0 (P. c. D. ) Dimensions in mm

(3)
PD
R
(2)
II
S
ML40114N
case
(1)
/;
LO
-
~==r'i=i==S."':'- Reference plane
PO
R(2)
4'
5
(3)
ase
(1)
II
LO
+1
o
,..:
~--
o .-tr- 3 - 0.45 ¢
ML40114R
(1) (3) (2)
., MITSUBISHI
2 -52 ..... ELECTRIC
ML4XX14 SERIES
DLight output vs. forward current Fig. 1 Light output VS. forward current
Typical light output vs. forward current charac- 5~--~-----'--~~-r--~

obtained at Ith + 12 rnA.
Beacause Ith and slope efficiency 7J (dPo/ dlF) is
at varying tern - peratures requires to control the
case temperature Tc or the laser current. (Control
the case temperature or laser current such that the
Forward current. IF (mA)
constant.)
a Temperature dependence of threshold current (lth) Fig. 2 Temperature dependence of threshold current
tempera'ture To of the threshold current is typically 50
<
,5.
150K in Tc ~ 60°C, where the definition of To is Ith 40
I-- r---
ex: exp (Tc/To). E
E
~:>
"
:2
0
.t:
30
20
- ---
'~"
.t:
f-
10
20 30 40 50 60 70

efficiency 7J is shown in Fig.3. The gradient is
- O.0003mW/mA/"C. <E
"-
~
,5.
'",: 0.2
- -
u
c:
.!Ii
.!I
~
'"
0.
0
u;
o
o 20 40 60
Case temperature, Tc ('C)
• MITSUBISHI
. . . . ELECTRIC 2 - 53
ML4XX14 SERIES.
I Forward current vs. voltage ·Fig. 4 Forward current' vs. voltage

\
fl
<
,§
30
.!!<
typically at a rate of - 1.5mV/"C at IF = 1mA.
to
! 20
~ Tc=SO·C_
u
"E Tc =2S·C-
~
0 10
IL
o
)
o 1.0 2.0
Forward vQltage VF (V)
I Emission spectra Fig. 5 Emission spectra under CW operation

Tc=25'C
Xl SmW
X1.6 3mW
XS.3 1mW
XSO Ith
770 780 790
Wavelength. A (nm)
I Temperature dependence of pel(lk wavelength Fig. 6 Temperature dependence of peak wavelength

Po=5mW
wavelength at an output of 5mW is shown in Fig.6.
As the temperature rises, the peak wavelength )
E 790
about O.26nm/"C typical.
.5
'"'
"-
788
,/
~c:
i
~
786
/
""~ 784
~
~
78 2
2S
V 30 40 so 60
. • ,MlTSUBlSHI
/ 2-54
"""'ELECTRIC
ML4XX14 SERIES
Fig. 7 Far - field patterns

I Far - fIeld pattern in plane parallel to heterojunction (J /I
The ML4XX14 laser diodes lase in fundamental 1.0
all
transverse (TEoo) mode and the mode does not 5mW
change with the current. They have a typical 0
0-
emitting area (size of near-field pattern) of 1.8 x O. S
~ 3mW
7 I.l rn'. Fig.7 and Fig. 8 show typical far- field 0
::J
radiation patterns in ·parallel" and ·perpendicular" 1: 0.5 J

g
planes.
.,
.2:
.11i
'/
are typically 13· and 33· . ~ VlmW
0
-30
e.JV Xl o 30

in plane perpendicular to heterojunction (J.L
1. 0 ; - - - , - - - - - , , , . . - - - - , - - - - ,
O.L
::J
a
5o
~ 0.5r----+--+-~~~~--~---;
g
~
m LIght output vs. monitoring output characteristic Fig. 9 Light output vs. monitoring output current
front one. Fig.S shows an example of light output
~
-5
0-
0 3 L
the front beam output is 3mW, the monitor output
becomes 1.0mA.
.,;
::J
~
::J
0
1:
2
/
/
~ /
l
o
V
o 0.5 1.0 1.5
Monitoring output. 1m (rnA)
• MlTSUBlSHI
"ELECTRIC 2-55
ML4XX14 SERIES
m Polarization ratio vs. light output characteristic Fig. 10 Polarization ratio vs. light output
NA=0.5
~
--i
0..
a: 200 ./
V
polarized in perpendicular to it. Figure 10 shows .2 V
V
'§
the standard polarization ratio vs. total light output c:
o
characteristic.
:~ /
~ 100
output. ~
V
o
o
V 2 3 4 5
Light output. Po (mW)
1m Astigmatic distance Fig. 11 Astigmatic distance

\ Po =3mW CW
in the parallel and perpendicular direction with the \
NA=0.7
\
laser beam. This distance between the two points E \
;
I
is the astigmatic focal distance. Therefore. when ~
"- \
, I
I
\
the laser beam is focused. there is a difference in .<: I
. -,
\
'6 ,, I
.• I.- -..
\
focal point in the two directions. making it difficult J ,
Q)
"-
~
5
'
"
I
$.- ~
-
The typical astigmatic focal distance at NA = 0.7 ,, • ~ ..., Parallel
Il ". , direction
'iii
150. ' , ' ; ...... Parpendicular
The LD position which minimizes the horizontal (j)
dIrection
Astigmatic'distance
and vertical spot diameters is obtained. The 1~2.0,um
o

LD moving distance (J1 m)
OJ Wave front distortion characteristics Fig. 12 Wave front distortion

Typical wave front distortion (mainly astigmatism)
of ML4XX14 is shown in Fig.12. This figure shows RMS : O. 026 P-V : O. 220
wave front (phase front) when laser beam is Po=3mW CW
NA=0.28
collimated. Various abberrations are calculated by
Zernike • s polynomial approximation for the
interference fringes observed by the Mach-Zehnder
interferometer.
-1.0 -0.5 0.0 0.5 1.0

parallel direction
.• MITSU.BlSHI
2-56 . . . . ELECTRIC
ML4XX14 SERIES
• Droop
Droop characteristics indicate the amount which
optical light output is down by heating up when
constant pulse current is loaded on LD.
Definition is follows.
PA - Ps
b.P= x 100 (%)
PB
PA: Initial value of monitoring current at 10% duty 10 --

pulse. (600Hz) O-O%~~~--~~~.L4--+--+--+~
PB: Final value of monitoring current at 90% duty l
pulse. (600Hz)
O. 333ms/ qiv
Typical droop characteristic of ML4XX14 is shown
in Fig.13. Typical droop value is 4 % at PA = 3mW.
• MITSUBISHI
. . . . ELECTRIC 2- 57
ML4XX15 SERIES
TYPE
NAME I ML40115C, ML40115R
ML4XX15 is an AIGaAs semiconductor laser which • Built- in monitor photodiode
provides a stable, single transverse mode oscillation • High reliability, long operation life
with emission wavelength of 780nm and standard .Low noise
light output of 3mW. • Multiple longitudinal mode
monitoring. It is produced by the MOCVD crystal Audio compact disc player
growth method which' is excellent is mass
production and characteristics uniformity. This high-
perfomance, highly reliable, and long - life semi-
conductor laser is suitable for such applications as
the light source for a compact disk player.

CW 5
Pulse (Note 1) 6
Tc Case temperature - - 40-+ 60 °C
Note 1: Duty less than 50 %. pulse Width less than 1 /1 S.
Limits
Min. Typ. Max.
lop Operating current CW. Po = 3mW - 58 70 mA
Vop Oprating voltage (Laser diode) CW. Po = 3mW - 1.8 2.5 V
TJ Slope efficiency CW.Po=3mW - 0.3 - mW/mA
fJ II Beam divergence angle (paraller) CW, Po-3mW 9 11 16 deg.
fJ.l Beam divergence angle(perpendicular) CWo Po=3mW 30 38 48 deg.
1m 0.15 0.35 0.7 mA
ID Dark current ( Photodiode) VRD = 10V - - 0.5 /1A
Ct Total capacitance (Photodiode) VRD - OV. f - 1MHz - 7 - pF
Note 2: RL IS load resistance of the photodiode.
• MITSUBISHI
2 - 58 ..... ELECTRIC
ML4XX15 SERIES
OUTLINE DRAWINGS
0.4 +0. 1 Dimensions in mm
A
-0 ~ 2. O( P. C. O. )
(3)case
II II
PO S LO
(2) (1)
ML40115C
(3)
A
'"
"'0
N+I iI II
NO
- f-F===rFi=~i--Reference plane PO S ase
LO
...: +1 -t--L-'---,n-#m----'-'
+1 (2) (I)
o
~'.L.. __ 0 '+-3-0.45~ ML40115R
(1) (3) (2)
• MITSUBISHI
.... ELECTRIC 2 - 59
ML4XX15 SERIES
I Light output vs. forward current Fig. 1 Light. output VS. forward current
Typical light output vs. forward current 5r----,----~----~,_~~
characteristics are shown in Fig.1. The threshold

increases linearly with current, and no kinks are 3r---~----_+--~~+_--~
3mW is obtained at Ith + 13mA. 2r-----r_----r_~~~----;
Beacause Ith and slope efficiency 7J (dPo/ dlF) is
0~0----~2~0----~~~~----~80
constant.)
I Temperature dependence of threshold current(lth} Fig. 2 Temperature dependence of threshold current

--
current. is shown in Fig. 2. The characteristic
< I---I'""""
130K in Tc;:;;i60"C, where the definition of To is Ith ,§ 40
oc exp (Tc/To). E
-E 30
~
""
:l2 20
0
.s:
~
.s:
f-
10
20 30 40 50 60 70
Case temperature, Tc ("C)

efficiency 7} is shown in Fig.3.' The gradient is
about OmW/mA/"C. <
, E
" 0.3t-------t-------+--------I
I
~
~~ 0.2r-----~r_------r_----__;
o 20 40 ' 60
Case temperature, Tc ("C)
2-60
ML4XX15 SERIES

slightly against the constant current IF. VF varies <E 30
~
u.
typically at a rate of - 1.5mV/oC at IF = 1mAo
E
f 20
:;
" Tc=50"C~
10
IJ..
10 1------ J
T1C=25'j
o
o 1.0 2.0

Typical emission sPectra under CW operation are
shown in Fig. 5. ML4XX15 oscillates in the
longitudinal multiple mode. The peak wavelength
'Ul
.t::
depends on the operating case temperature and c:
forward current (output level). "
Wavelength. ,\ (nm)
I!1Temperature dependence of peak wavelength Fig. 6 Temperature dependence of peak wavelength

P o =3mW
wavelength at an output of CW, 3mW is shown in
Fig.6.
E
790 /
S
c-
o(
788 L
V
.sc:
about O.26nm/oC typical.
~
'"
..
Q) 786
/
/
>
~
.><
~ 784
782
25
V 30 40 50 60
'. MITSUBISHI
"'ELECTRIC 2-61
ML4XX15 SERIES

I Far - field pattern in plane parallel to heterojunction e/I
The ML4XX15 laser diodes lase in fundamental
6/1
transverse (TEoo) mode and the mode does not _5mW
change with the current. They have a typical
emitting area (size of near-field pattern) of 1.8 x .:
0.51.1 rn'. Fig.7 and Fig.8 show typical far- field "
~

"
o
1/ r-- 3mW
planes.
are typically 11· and 38· .
jY ,;v1mw
~
-30 o +30

in plane perpendicular to heterojunction e.L
~
S-o.
So
Off - axis angle (deg.)
Fig. 9 Light output vs. monitoring output current

m Monitoring output 5
The laser diodes emit beams from both of their
mirror surfaces. front and rear surfaces. The rear 4
/
beam can be used for monitoring power of front ~
§ V
beam since the rear beam is proportional to the' ~ 3
/
S0.
S 2
/
the front beam output is 3mW. 1m is 0.5mA typical
and the monitor output current increases in
0
.E0>
::;
/v
proportion to the front beam output. 1/
0.2 0.4 0.6
Monitoring output. 1m (rnA)
• MITSUBISHI
2-62 . . . . ELECTRIC
ML4XX15 SERIES

I SIN va. optical feedback ratio f=20kHz, BW=300Hz, Tc=25-SO'C
S/N vs. optical feedback ratio, where frequency is 70
20kHz and the bandwidth is 300Hz is shown in
Fig.l0. 80
And that where the frequency is 10MHz and the ol") --O--lmWCW
bandwidth is 300kHz is shown in Fig.ll. ID 90 ---Q.-2mWCW
"tl
The S/N value is the worst value at case .r-.-o.-Q -l?'._ ..o
z --':g::-
..-.. -- "'-<:>-"-3mW CW
temperatures of 25"C to 50 "C.
en 100
-<>-.. =-~
~;:~.::~ r--..e-" .0-.. ·· ..6 --Lr--4mW CW
....... -5mWCW
11 0
120
o 0.01 0.1 10
Optical feedback ratio, Rf (96)

f=10MHz,BW=300kHz, Tc=25~50t
60~-------r------~------'
--<>--lmWCW
_'-0-'- 2mW CW
z -"~"-3mWCW
en 90
·· .. ·t:r· .. ·4mW cw
- - .... --5mWCW
100~-------r------~----~
11 0 Iti-J.--L.........I...-=""-.:......I.--..I.--!--L---'L..-,I.
o 0.01 0.1 10
Optical feedback ratio, Rf (96)
_Astigmatic distance Fig. 12 Astigmatic distance

10
.. ,
,Po~3mW CW
'NA=0.7
E
::t ,,
I
.
I
I
,,,
,
~
',\ ,
:2
:2
~
.'- ...........
I
I
,
...... " '.'
to converge the beam spot to the diffraction limit. ~

5
. ~, ,- \
The typical astigmatic focal distance at NA = 0.7 of
ML4XX15 is shown in Fig.12.
C
i!I
';;;
. " parallel direction
,--I-- perpendicular
The LD position which minimizes the horizontal ..

0
(I)
J,
& __. '
-I
directon
I
Astigmatic distance
1 1 11.2 ~ m
I

o
astigmatic distance is the difference in moved o 10 20 30 40
distances thus obtained. LD moving distance (It m)
2-63
ML4XX16 SERIES
FOR OPTICAL COMMUNICATION SYSTEMS
TYPE
NAME ML40116R
ML4XX16 is AlGa As semiconductor laser which • Built- in monitor photodiode
provides a stable, single transverse mode oscillation • High reliability, long operation life
with emission wavelength of 780nm and standard • Low noise
light output of 3mW. • Multiple longitudinal oscillation (Self pulsation)
monitoring. This high- perfomance, highly reliable, Digital communication system (Data link)
and long -life semiconductor laser provides multi-
mode oscillation (longitudinal mode) and is suitable
for suqh applications as the light sources for
optical communications including data links.

CW 5
Pulse (Note 1) 6
Tst9 Storage temperature - - 55-+ 100 'c
Note 1: Duty less than 50 %. pulse width less than 1 /1 s.
Limits
Min. Typ. Max.
Vop Operating voltage (Laser diode) CW.Po=3mW - 1.8 2.5 V
7) Slope efficienty CW.Po =3mW - 0.3 - mW/mA
.l. P Peak wavelength CW.Po=3mW 765 780 800 nm
8 II Beam divergence angle (parallel) CW.Po-3mW 8 11 20 deg.
8.l Beam divergence angle (perpendicular) CW.Po=3mW 20 38 48 deg.
1m 0.15 0.4 0.7 mA
ID Dark current (Photodiode) VRD = 10V - - 0.5 /1A
Ct Total capacitance (Photodiode) VRD - OV. f = 1MHz - 7 - pF
• MITSUBI.SHI
2-.64 "ELECTRIC
ML4XX16 SERIES
OUTLINE DRAWINGS
0.4 ~ g.l ¢ 2.0 (P.e.D.) Dimensions in mm
00
+1
Reference stot- :ifiZ~:i: "0 (3)
",0
"!
N +1
PO
~/¥
(2)
S
(1)
LO
h2===;=f:;==~~Reference plane
+1
q
. . -'---__0 .-8-- 3 - 0.45 ¢
(1) (3) (2)
. • MITSUBISHI
..... ELECTRIC 2 - 65
ML4XX16 SERIES
FOR OPTIC,AL COMMUNICATION SYSTEMS
I Light output vs. forward current

Typical light output vs. forward current charac-
teristics are shown in Fig.l. THe threshold current
obtained at Ith + 10mA. Beacause Ith and slope
efficiency T/ (dPo/dIF) is temperature dependent,
obtaining a constant output .at varying temperatures
requires to control the case temperature Tc or the
laser current. (Control the case temperature or
laser current such that the output current of the
built- in monitor PO becomes constant.)
I Temperature dependence of threshold current (lth) Fig. 2 Temperature dependence of threshold current
temperature To of the threshold current is typically
170K in Tc~60"C, where the definition of To is Ith
IX exp (Tc/To).
~
,5
:E
+"
c:
~
70
50
40
30
- ~ --
:;
"
:!2
0 20
.,
.s::;
!
.s::;
I-
10
20 30 40 50 60 70

efficiency T/ is shown in Fig.3. The gradient is
~
about OmW/mA/·C. ~ 0.4
::
,5
~
.91
~ 0.3r----r----+----r----+----i
20 30 40 50 60 70
• MITSUBISHI
2-66 .... ELECTRIC
ML4XX16 SERIES
I Forward current vs. voltage Fig. 4 Forward current vs. voltage

temperature rises. the forward voltage VF decreases ~
§ 30
1:
typically at a rate of -2.0mV/oC at IF = 1mA.
E
~:l 20
U
'E Tc=50"C....;o
~
0
?-25"C
u. 10
o
)
o 1.0 2.0
Forward voltage YF 01)

Tc=25"C
shown in' Fig. 5. ML4XX16 oscillates in the
longitudinal multiple mode. The peak wavelength
Wavelength. A (nm)
Ii'ITemperature dependence of peak wavelength Fig. 6 Temperature dependence of peak wavelength

A typical temperature dependence of the peak wave- 785
length at an output of CWo 3mW is shown in Fig.6. Po=3mW
The peak wavelength of the beam shifts to adjacent

E 784 L
longitudinal mode by variation of operating tem-
perature.
,5
~
Q
783 /
V
"C
Averaged temperature coefficient is about O.26nm/
"";;,
I:
.!!
~ 782 L
~
""l 781 ", /
780
25 30 35 40
Case temperatue. Tc ("C)
.•. MlTSUBISHI
..... ELECTRIC 2-67
ML4XX16 SERIES
Fig. 7 Far- field pattems

I Far - field pattern in plane parallel to heterojunction (J II
The. ML4XX16 laser diodes lase in fundamental
I) II
treanverse (TEoo) mode. and the mode does not 1""--5mW
emitting area (size of near-field pattern) of 2.1 x
0.7 Il rn'. Fig.7 and Fig.8 show typical far- field
planes.
II" r-3mW

~30
J'I f'\t1mw
o 30

in plane perpendicular to heterojunction (J J..
'5a
5o
II Light output vs. monitoring output characteristic Fig. 9 Light output vs. monitoring output current
mirror surfaces. front and rear surfaces. The rear V
beam· since the rear beam is proportional to the
front one. Fig. 9 shows an example of light output
~
,5
0
a. 3 V
vs. monitoring photocurrent characteristics.
When the front baeam output .is 3mW. 1m is
O.4mA typical and the monitor output current
.;
~
::>
S::>
0 2
I
/
~
increases in proportion to the front beam output. '"

::;
1 L
V 0.2 0.4 0.6 0.8 1.0
Monitoring output. Irn (rnA)
,... MITSUBISHI
2-68 . . . . ELECTRIC
ML4XX16 SERIES

Ii] SIN vs. optical feedback ratio f=20kHz, BW=300Hz, T c=25-50·C
S/N vs. optical feedback ratio where the frequency 70
-100
Fig.l0. 80
That where the frequency is 10MHz and the A-oooo4--o--O+--(f"'.)---I<'V'"J--..o
ov - II 0
bandwidth is 300kHz is shown in Fig.ll. 90 I--+-----+---+-----j z
The S / N value is the worst value at case (-'-0-.-0-'-0-. Q-_-Q i[
-120
temperatures of 25"C to 50 "C. z ~lmW
if; 100 • ~ • ~ --
.....
--- .. --1\----6·
_- ..........--.1\---
-_ .........-_. .";:-.~
--...[J.-- 2mW
-130 -.. -0-..• 3mW
110 I - + - - - - + - - - - ! - - - - - I . - & - 4mW
-140 -.-. • --- 5mW
120 y " l - - ' - - - - - ' - - - - - - ' ' - - - - - '
o 0.01 O. 1 10
Optical feedback ratio. Rf (%)
Fig. 11 S/N vs. OPtical feedback ratio

f=lOMHz, BW=300kHz, T c=25-50°C
50
" -110 N
J:
60 -....
OJ
u
{}-.-o -120
[)-- -{}---a --0-'-
z
OJ 70 i[
u ,... ---<>---- <?-.".JO
z
-....
(/) 80
-
-0-'--<>
-6----6 ---~--
.. 'W' . . . . -
...........
__ -6
~
-130 ---<>-- 1 mW
"-{]---2mW
-140 •• -<)-.-- 3mW
90 --6-- 4mW
-150 ---.---- 5mW
100
o" 0.01 0.1 10
1m Impedance characteristics Fig. 12 Impedance characteristics

with lead lengths of 2mm, are· shown in Fig.12
with the bias currents as the parameter. Test
frequency is swept from 1OOMHz to 1300MHz with
100MHz steps.
Above the threshold current, the impedance can
be approximated by a series connection of a
resistance of 3 ohm and an inductance of 2nH.
'.MITSUBISHI
. . . . ELECTRIC·· 2-69
ML4XX16 SERIES

I I
Po =3mWCW
in the parallel and perpendicular directions with the I
, \
,I
laser beam.This distance between the two points is
the astigmatic focal distance.. Therefore, when the
,
I
I
\
·
·•.· ,
NA=O.7
:
I
,,
.Iaser beam is focused, there is a difference in focal
point in the two directions, making .. it difficult to 5
I
I
\
,,
. ,
I
•
,,
\ ,e" .,
'\
\
converge the beam spot to the diffraction limit.
~ I .........
parallel
The typical astigmatic focal distance at NA = 0.7 of
'.,~ I~ direction
ML4XX16 is shown in Fig.13. The LD position
fl- perpendicular direction
which minimizes the horizontal and vertical spot I I, 1
diameters is obtained. The astigmatic distance is Astigmatic distance 14.. 0 /.l m
°O~~~1~O~~~20~~~3~O~---J40
the difference in moved distances. thus obtained.
LD moving distance (/.l m)
2~ 70 '.
. . ... .MITSUBISH.
.... ELECTRIC I
ML4XX19 SERIES
TYPE
NAME ML44119N, ML44119R
ML4XX19 is an AlGa As semiconductor laser which • Low droop
provides a stable. single transverse mode oscillation • Short astigmatic distance
with emission wavelength of 780nm and standard • Low threshold current
light output of 5mW. • Single longitudinal, mode
It is produced by the MOCVD crystal growth method • Built- in photodiode
which is excellent in mass production and charac-
teristics uniformity. This is a high - performance. APPLICATION
highly reliable. and long -life semiconductor laser. Laser beam printer and digital copy

Po Light output power CW 8 mW
Tstg Storage temperature - - 55-+ 100 'c

Limits
Min. Typ. Max.
1/ Slope efficiency CW.Po-5mW - 0.35 - mW/mA
011 Beam divergence angle ( parallel) CW.Po=5mW 9 11 15 deg.
OJ. Beam divergence angle (perpendicular) CW.Po=5mW 26 33 40 deg,
1m 0.3 0.7 1.7 mA
(Photodiode) RL *= 10Q
ID Dark current ( Photodiode) VRD = 10V - - 0.5 /1A
Ct Total capacitance ( Photodiode) VRD = OV. f = 1MHz - 7 - pF
* RL = The load resistance of photodlode.
" ' 'MITSUBISHI

..... a.ECTRIC 2-71
ML4XX19 SERIES
OUTLINE DRAWINGS
Dimensions in mm
A
. PO . 1/.
S
(2)
(3)
'SO
(1)
IILO
Reference slot
ML44119N
PO
A 1/
(2)
(3)
S
"SO
(1)
II
LO
ML44119R
(1) (3)(2)
•. MITSUBISHI
2-72 . . . . ELECTRIC
MITSUBiSHI LASER DIODES
ML5XX1A SERIES
TYPE
NEME ML5101A, ML5401A
ML5XXl A is a high - power semiconductor laser • High power (pulse 30mW)
whic.h provides a stable, single transverse mode • Single longitudinal mode
oscillation with emission wavelength of 850nm and • Short astigmatic distance
standard light output of 15mW. • Low threshold currrent, low operating current
ML5XX1A uses a hermetically sealed package • Built - in monitor photodiode
incorporating the photodiode for optical output • High reliability, long operetion life
monitoring. This high - performance, highly reliable,
and 10hg -life semi - conductor laser is suitable for APPLICATION
such high - power applications as instrumentation. Laser printer, optical communication, and instrumen-
tation

CW 18
Pulse (Note 1) 30
Tstg Storage temperature - -55-+ 100 "C
Note 1: Duty less than 50 96. pulse width less than 1 Il S.

.Limits
Min. Typ. Max.
lop Operating current CWo Po -15mW - 60 90 mA
Vo~ Operating voltage CW.Po-15mW - 1.8 2.5 V
71 Slope efficiency CW.Po=15mW - 0.45 - mW/mA
Oil Beam divergence angle (parallel) CW.Po-15mW 8 11 16 deg.
OJ. Beam divergence angle (perpendicular) CW.Po=15mW 20 30 40 deg.
Monitoring output curren CWo Po = 15mW. VRD = 1V.
1m 0.5 1.0 3.0 mA
(Photodoide) RL= 10 Q (Note 2)
ID Dark current (Photodoide) VRD= 10V - - 0.5 IlA
Ct Total capacitance ( Photodoide) VRD - OV. f - 1MHz - 7 - pF
Note 2 :. RL IS load resistance of the photodlode.
• .··MlTSUBlSHI
"'B.ECTRIC 2-73
ML5XX1A SERIES
OUTLINE DRAWINGS
Dimensions in mm
16±O.25
, A(3) Case
II II
PD S LD
(2) (1)
Dimensions in mm
f'I'f!
Reference slot
PD S LD
(2) (1)
+1
o 3- ¢ O. 45±0. 05
,..: P. C. D. ¢ 2. 54
(1 )(3) (2)
• MITSUBISH,I
2-74 ..... ELECTRIC
ML5XX1A SERIES
Typical light output vs. forward current 15 30
characteristics are shown in Fig.1. The threshold
current for lasing is typically 30mA at
room ~
~
3l
:;
..
c. *
0
It)
10 20
~ S
increases linearly with current, and no kinks are .5 pulse
.5
"0
<Ii
0
observed in the curves. An optical power of about Cl. 0 "-
Cl.
15mW is obtained at Ith + 30 mA. '5c.
Because Ith and slope efficiency 7} (dPo/ dlF) is '50 10 " -S~
c.
'50
temperature dependent, obtaining a constant output .E CD
.2' .E !!!
...J .2'
...J e:,"
temperature Tc or the laser current. (Control the 0
00 120
Forward current. IF (mA)
constant.)
I Temperature dependence of threshold current (hh) Fig. 2 Temperature dependence of threshold current
~
65K in Tc;a; 50"C, where the definition of To is Ith .5 40
,./"
oc exp (Tc/To). :E
~
c: 30 ..,.....
..,..... V
f
:; /""
~
0
"0
"0 20
.s;;
<II
f
.s;;
f-
10 20 30 40 50
IJTemperature dependence of shope efficiency Fig. 3 Temperature dependence of slope efficiency

15mW
efficiency 7} is Fig.3. The gradient is - 0.002mW/
CW
mA/"C typo
............
-............
~
'" 0.4 ~
........
10 20

30 40
'" 50
• . MITSUBISHI
. . . . ELECTRIC 2-75
ML5XX1 A SERIES

are shown in Fig. 4. In general, as the case I
60
slightly against the constant current IF. VF varies <
§
typically at a rate of - 2.0mV/oC at IF = 1mA. ,!!,
E 40
~
'50 Tc=50~
'0
~
~c
~ 20
0
j
u.
1.0 2.0
Forward voltage, VF 01)

Xl l5mW
X1.6 lOmW
X6.3
.J 3mW
X200 Ith
842 852 862
Wavelength, A (nm)
II Te~perature dependence of peak wavelength Fig. 6 Temperature dependence of peak wavelength

P o =15mW
wavelength at an output of CW 15mW is shown
in Fig.B. E 828 r
S
c.
.sc: 827
V
about O.25nm/oC typical. '"
.S!
'"
>
'~" 826
J
-"
l 825 /
824
~
25 30 35 40
Case temperature, Tc ('C)
• .MITSUBISHI
2-76 "ELECTRIC
ML5XX1A SERIES

I Far-field pattern in plane parallel to heterojunction e //
The ML5XX1 A laser diodes in fundamental 1. o.---r----y----,---,
8 II
transverse (TEoo) mode and the mode does not
~
emitting area (size of near -field pattern) of 2.3 x
5Co
0.8 ~ m'. Fig.7 and Fig.8 show typical far- field s0
radiation patterns in "parallel" and "perpendicular" 0.5
.E
planes. g
The full angles at half maximum points (FAHM) .~
are typically 11· and 30· . ic::

in plane perpendicular to heterojunction e 1.
II Pulse response waveform Fig. 9 Pulse response waveform

Input pulse
I
the main concerns. tf=250ps
current.
Figure 9 shows a standard response waveform
obtained by biasing ML5XX1 A to Ith and applying
a square pulse current (top of Fig.9)up to 15mW.
A quick response is obtained with rising and falling
times being both O.3ns typical.
Time (nsec.)
• . MITSUBISHI
. . . . ELECTRIC 2-77
ML5XX1A SERIES
The laser diodes emit beams from both of their 15r-----~r-------~------,

beam can be used for monitoring power of front typo
10r----f--r-------t-------;
front one. Fig. 10 shows an example of light
When the front beam output is l5mW, the
monitor output becomes about 1.OmA. 5r-~----+_------_+-------4
2 3
Monitoring output, 1m (rnA)
The main polarization of ML5XX1A is made in the 200
'direction parallel to the active layer. Polarization
'"
a.
...
polarized in parallel to the active layer to the light ~ 150
,/
Cl:
polarized in perpendicular to it. Figurell shows the
standard polarizastion ratio vs. total light output
0
.~
c: 100 /'
V
characteristic.
..
.~
/
/
.!:!
j
output. 0.
a. 50
"
5 10 15 20
Light output. Po (mW)
• Impedance characteristics
Typical impedance characteristics of the ML5XXl A,
with lead lengths of 2mm, are shown in Fig.12
frequency is swept from lOOMHz to l300MHz with
lOOMHz steps.
Above the threshold current, the impedance of
the ML5XXl A is nearly equal to a series
connection of a resist - ance of 5 ohm and an
inductance of 5nH.
---X---1op
, • ,,' MITSUBISH,I
2-78 . . . . ELECTRIC
ML5XX1 A SERIES
II SIN vs. optical feedback ratio Fig. 13 S/N vs. optical feedback ratio
f=20kHz. BW=300Hz. Tc=25-50C
S/N vs. optical feedback ratio, where the frequency 70
Fig.13.
That where the frequency is 10MHz and the
bandwidth is 300kHz is shown in Fig.14. al
1:l
The S/N value is the worst value at case ---0--lmW
z
temperatures of 25"C to 50 "C. "-
en 100 -·~·-2mW
-··~··-3mW
---&--4mW
1 1 0 H f - - - - + - - - - + - - - - - l · · · · . · · · . 5mW
1204~--~~~~~~~~~~~.
o O. 01 O. 05 O. 10. 2 O. 5 1 2 5 10

50 f=10MHz, BW=300kHz, Tc=25-50'C
60
z
"-
en ---0-- lmW
-.~.- 2mW
90HI------1-----+-----I-··~ .. - 3mW
---&-- 4mW
.. ··.····5mW
100 Lfj-J'-:-~-:-.I.:c:-:'....,...,.'_,,__:_'_:,...............J-~_,J.
o 0.01 0.050.10.2 0.5 1 5 10

There seems to be a difference in luminous point 10r-,---~----~--r_~-----,

\ Po=3mW
\
cw,
I
I
'. \\ NA=0.7
laser beam. This distance between the two points \ \ : perpendicular
\ \ ~direction ,
in the astigmatic focal distance. Therefore, when
focal point in the two directions, making it difficult \ '
"
\
\~ I
\ :
"
"
ot converge the beam spot to the diffraction limit.
5r--~+-~~.--+~,-~~-~-1
\'"
\
.,......
.... .4" "-parallel
of ML5XXl A is shown in Fig.15.
'..
,
'
! - direction
Astigmatic
--;oI---++E- distance 6.8 /1 m
astigmatic distance is the difference in moved
distances thus obtained. LD moving distance (/1 m)
2-79
ML5XX3A SERIES
TYPE
NAME ML5413A
DESCRIPTION. FEATURES
ML5XX3A is a high - power semiconductor laser • High-power, stable single longitudinal mode
which provides a stable, single transverse mode • Low threshold current, low operating current
oscillation with emission wavelength of 820 nm • Built- in monitor photodiode
and standard continuous oscillation of 10mW. • High reliabillity, long operation life
ML5XX3A uses a
hermetically sealed package
incorporating the photodiode for optiocal output APPLICATION
monitoring. This high- performance, highly reliable, . Optical disk drive, laser beam printer, optical
and long-life semiconductoL laser is suitable for communication
such ·high - power applications as optical disk
memory writing.

VAL Reverse voltage (Laser diode) - 2 V
VAD Reverse voltage (Photodiode) - 15 V
IFD ForWard current ( Photodiode) - 10 mA
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc = 25 "C)
Limits
Min. Typ. Max.
lop Operating current . CW,Po-10mW - 65 100 mA
Vop Operating voltage (Laser diode) CW,Po=10mW - 2.0 2.5 V
1/ Slope efficiency CW, IF - Ith + 25mA - 0.4 - mW/mA
AP Peak wavelength CW,Po-10mW 800 820 840 nm
(JII Beam divergence angle ( parallel) CW,Po= 10mW 10 12 17 deg.
(Jl. Beam divergence angle ( perpendicular)
CW,Po= 10mW 20 30 35 deg.
Monitoring output current CW, Po = 1OmW, VAD = 1V,
1m (Photodiode) RL = 10 Q (Note 1)
0.3 0.8 1,7 mA
10 Dark current ( Photodiode) VRD = 10V - - 0.5 IJ.A

Note .1 : RL IS load resistance of the photodlode.
2-80
ML5XX3A SERIES
OUTLINE DRAWINGS
+9 ~g. 03 Dimensions in mm
MAX. +7. 6
+6.4
(3)
k:~~~.r-- Reference slot
PO.
A /I
(2)
S
ase
(1)
II·
LO.
+
3- O. 45±0. 05
+
P. C. D. 2. 54
2-81
ML5XX3A SERIES
I Light output vs. forWard current Fig. 1 Light output vs. forward current
Typical light output vs . forward current 25
characteristics' are shown in Fig. 1. The threshold
temperature. Above the threshold. the light output
increases linearly with current. and no kinks are
I£ 15~----~----~-I~~---;
10mW is obtained at Ith + 25m A.
&
~ 10~--~~----~~~~---;
Because Ith and slope efficiency TJ (dPo/ dlF) is
temperature dependent. obtaining a constant output
°0~----~3~0.w~~----~----~
output current of the built~in monitor PD becomes
constant.)
II Temperature dependence of threshold current (Ith) Fig. 2 Temperature dependence of threshold current
current is shown in Fig. 2. the characteristic
-
temperature To' of the threshold current is typically 50
<' ~
150K in Tc ~ 60'C. where the definition of To is Ith

,5
40 ~~
0: exp (Tc/To).
E
E 30
~
"u
:l2
0
.s::; 20
fA
!
.s::;
I-
10
20 30 40 50 60 70
Case temperature Tc ('C)
I Temperature dependence of slope efflclency{ TJ ) Fig. 3 Temperature dependence of slope efficiency

- 0.001 mW/mA/'C <'E
~
-
,5
"" 0.4
~
~
c
.!I!
.11
li
.,a
£
0.3
o 20 40 60
2-82
ML5XX3A SERIES
FOR OPTICAL INFORMATIO.N SYSTEMS

are shown in Fig.4. In general, as the case
slightly against the constant current IF. VF varies .s
1:
typically at a rate of - 2.0mV/"C at IF = 1mA. ~
30
c:
!
:;
CJ T c =50·C ~
20
'E
~0 T~=25·C -
u.
10
j
1.0 2. a

shown in Fig. 5. In general, at an output of 10mW,
Xl 25mW
X4 10mW
X32 .JIIIN. 3mW
X500 Ith
813 823 833
Wavelength ). (nm)
I] Temperature dependence of peak wavelength Fig. 6 Temperature dependence of peak wavelength

A typical temperature dependence of the peak 83 5
wavelength at an output of cw, 20mW is shown po;"20mw
in Fig.6. E 83 3
-5
~ 83 1
,/
9
~
7....r I-'
/
82 5
25 30 40 50 60
• MITSUBISHI
.... ELECTRIC 2 -83
ML5XX3A SERIES

I Far - field pattern to heterojunctions ell
The ML5XX3A l<lser diodes lase in fundamental 1.0
transverse (TEee) mode and the mode does not
8/1 I
,..--25mW
change with the, current. They have a typical
0
emitting area (size of near-field pattern) of 2.1 x "-
5a
0.8 ~ m'. Fig.7 and Fig.8 show typical far- field
50
radiation patterns'in "parallel" and "perpendicular" ~ 0.5
.<:
planes.
.
~
I
,.........10mW
~c-'mJ
The full angles at half maximum points (FAHM) >
are typically 12· and 30· . ..

N
a::
'/
a
-30
~
a
~ +30
I
Fig. 8 Fare field patterns in plane perpendicular

to heterojunctions .L e
1. a,----,-----:IIr"---,.---,
, ~
::>
a
5o
g 0.5~--~--~--+--1----~--~
.~
~
rP.
-30
m Monitoring output Fig. 9 light output vs. monitoring output current

The laser diodes emit beams from both of their 25r------,-------:n
mirro'r surfaces, front and rear surfaces. The rear
When the front beam output is 1OmV, the
"
0.
;;
o
monitor output becomes about 0.8mA. .<:
,2.>
-'
" ,'MITSUBISHI
2 - 84 ..... ELECTRIC
ML5XX3A SERIES
Fig. 1 0 Impedance characteristics

II Impedance characteristics
Typical impedance characteristics of the ML5XX3A,
with lead lengths of 2mm, are shown in Fig. 10
frequency is swept from 100MHz to 1300MHz with
100MHz steps.
Above the threshold, the impedance of the
ML5XX3A is nearly equal to a series connection of
a resistance of 4 ohm and an inductance of 4nH.
1m SIN vs. optical feedback ratio Fig. 11

.
S/N vs. optical feedback ratio
f=20kHz. BW=300Hz T c=25-50'C
S/N vs. optical feedback ratio, where frequency is 60
20kHz and the bandwidth is 300Hz is shown in
Fig. II.That where the frequency is 10MHz and the 0 ~ p
'-." I
bandwidth is 300kHz is shown in Fig. 12.
The S/N value is the value obtained at CW drive
/ \, I
I
I
Cl 80
and high-frequency superimpose drive. It the worst
value at case temperatures of 25 ·C to 50·C and
1J
z
.I \, ..J3
I
I
an environmental temperature of 25 "C. The

OJ 90 /---0-- ... )---~' --0--
..... 3mWCW
--
frequency of high-frequency superimpose is about :I ~
-,~,-
10IU ...,.' "'Lf 20mW CW

700MHz and the input level is the value obtained I
at aobut 35mAp- p. 3mW HF
11 0
a o. 01 0.1 10

.
f=10MHz BW=300kHz T c=25-50'C
50
. ,P
,,
,/
60 .d
-~~= r:.--.()'"
''0..'' .
'g 70 , '--l..J
z r;
"-
C/)
80 --0--
3mWCW
-
-,~,-
90 20mW CW
3 mW HF
100
o 0.01 0.1 10
. • MITSUBISHI
"'ELECTRIC 2-85
ML5XX3A SERIES
ID Astigmatic distance Fig. 13 Astigmatic distance

There seems to be a difference in "luminous point 10
p o =;3mw cw
in the parallel and perpendicular direction with the , ,
, NA=0.7
laser beam. This distance between the two points E \
\
I
I
"'- \
is the astigmatic focal distance. Therefore, when ~
•
--,'- , I

;S
~
(\I
\
~-
, . -- ........ --:-
;
,
-- -
to converge the beam spot to the diffraction limit. ~ \
..
,
.i..
:... -< " ' parallel
direction
::;
Q)
..- ., '- perpendicular
r
.~ " direction
of ML5XX3A is shown in Fig.13.
The LD position whi.ch minimizes the horizontal
b0.
<I)
I
Astigmatic
and vertical spot diameters is obtained. The 'I distance 6.0 f1 m
astigmatic distance is the difference in moved 10 20 30

LD moving distance (f1 m)
III Wave front distortion characteristics Fig. 14 Wave front distortion

Typical wave front distortion (mainly astigmatism) RMS: O. 028' P-v: O. 202
of ML5XX3A is shown in Fig.14. This figure shows Po =3mW CW
NA=0.28
collimated. Various aberrations are calculated by
Zernike's polynomial approximation for the inter-
ference fringes observed by the Mach - Zehnder
interferometer. 0. 098 1
0. 047 1
0.003+
I
-0. 054 1
- 0.104 1
-1.0 -0.5 0.0 0.5 1.0
parallel direction
•. .MITSUBISHI
2-86 . . . . ELECTRIC
ML5XX4 SERIES
TYPE
NAME ML5784F
The ML5XX4 series is a high-power semiconductor • High power(CW 20mW. pulse 80mW)
laser which provides a stable. single transverse • Low threshold current. low operating current
mode oscillation with emission wavelength of 850 • Built- in monitor photodiode
nm and standard continuous oscillation of 15 mW. • High reliability. long operation life
monitoring. This high - performance. highly reliable. OTDR. optical communication system
and long - life .semicond~ctor laser is suitable for
such applications as the light sources for optical
fiber broken - point detector and long - distance
communication.

IF Forward current (Laser diode) Pulse (Note 1) 450 mA
Tc Case temperature - -40-+ 50 oc;
Tstg Storage temperature - -55-+ 100 oc;
Note 1: Duty· less than 1 %. pulse width less than 4 f.l s.

Limits
Min. Typ. Max.
lap Operating current CWo Po = 15mW - 50 90 mA
Po (Pl Pulse light output Pulse. IF = 400mA (Note 2) 80 - - mW
AP Peak wavelength CW.Po= 15mW 830 850 870 nm
B/I Beam divergence angle ( parallel) CWo Po = 15mW 8 11 16 deg.
B-1 Beam divergence angle (perpendicular) CWo Po = 15mW 20 30 40 deg.
1m (Photodiode) RL= 10 Q (Note 3)
0.04 0.12 1.0 mA
ID Dark current ( Photodiode) VRD = 10V - - 0.5 ilA

Ct Total capacitance ( Photodiode) VRD = OV. f = 1 MHz - 7 - pF
Note 2 : Pulse Width 2 f.l s. 0.2 % duty
3 : RL is load resistance of the photodiode.
• MITSUBISHI
"'ELECTRIC ? - R7
ML5XX4 SERIES
OUTLINE DRAWINGS
19:::g. 03 (Unit: mm) (¢ 9mm, 4- ptn

MAX1S.1
low- cap package)
(4) (3)
?
117
c
1'Ifs T
·0
Cl
PD LD
(2) (1)
, 4- /0 O. 45
P. c. D . • 2.54
(1)(3)(2)
(41
• . MITSUBISHI
2-88 .... ELECTRIC
ML5XX4 SERIES
DLight output vs. forward current Fig. 1 Light output vs. forward current
Figure 1 shows the typical light output vs. current 20
characteristic in the CW drive of ML5XX4. The
threshold current Ith at room temperature is about
~
30mA. The optical output increases at currents g
larger than Ith and no' kink is observed. An optical §
output of about 15mA can be obtained at Ith + cE 10
25mA. Figure 2 shows the typical optical output SCo
vs. current characteristic in the pulse drive at a S0
pulse width of 2 fJ- m and duty cycle of 0.2 %. An .E
.11!
...J
optical output of about 80mW or more can, be
obtained at room temperature with a forward
0
current IF of 400mA. 0 100
Because Ith and slope efficiency 7) (dPo/ dlF) is

case temperature or laser current such that the Fig. 2 Light output vs. forward current
output current of the built-in monitor PD becomes 100r-----~----~-----r----_,
constant.)
.
.,
0;
0..
g
§
0
0.. 50
~
:::>
S:::>
0
.E0>
:J

(pulse width 2 f.J. s. 0.2 % duty)
I Temperature dependence of threshold current(lth} Fig. 3 Temperature dependence of threshold current

current is shown in fig. 3. The characteristic
50
temperature To of the threshold current is typically ~
65K in Tc;:;; 50·C, where the definition of To is Ith § 40
:E V-
ex: exp (Tc/To).
30 /'"
E
l!!
~
()
........ ~
:s! 20
..
0
.t::
l!!
.t::
f-
10
20 30 40 50 60 70
.• MITSUBISHI
. . . . ELECTRIC 2 - 89
ML5XX4 SERIES
I Temperature dependence of slope efflclency( TJ 0) Fig. 4 Temperature dependence of slope efficiency

:... O.005mW/mA/OC.
~ 0.6r-------r-~~~r-----~
.s
g
.iI!
.11
:;
! 0.5r-----~------_r--~r-~
o 20 40 60
II Forward current vs.

,
voltage Fig. 5 Forward current vs. voltage
temperature rises,the forward voltage VF decreases 40
<
.s
..!:
typically at a tate of - 2.0mV/"C at IF = 1mAo 30
~
"u 20
Tc=50t~
'E
T~=25t-
~
0
II.
10
0
j
0.5 1.0 1.5 2.0

Tc=25'C
shown in Fig.S. In general, at an output of 15mW,
Wavelength ). (nm)
.• ·MITSUBlSHI
2-90
"'B.ECTRIC.
ML5XX4 SERIES
iii Temperature dependence of peak wavelength Fig. 7 Temperature dependence of peak wavelength
Po =15mW
wavelength at an output of CW, 15mW is shown
in Fig.7. E 858
~
,5
As the temperature rises, the peak wavelength 0.
shifts .to the long wavelength side at a rate of '" 856
r J
~
about 0.25 nrh/"C typical. 0.

.
c:
.S!
> 854
~
".
~
a. 852 r I--'
850 W----- 40 50 60
25 30
Case temperature Tc (~)

I Far- field pattern to heterojunctions () I I
() II
transverse (TEoo) mode and the mode does not 20mW
emitting area (size of near-field pattern) of 2.3xO.8 ~ rn'.
15mW
Fig.8 and Fig.9 show typical far- field radiation.
patterns in "parallel" and "perpendicular" planes.
are typically 11' and 30· .
5mW
-30 +30

to heterojunctions (}.L
~
Sa
So
Off- axis angel (deg.) ,
• MITSUBISHI
ML5XX4 SERIES
II Monitoring output Fig. 10 Light output vs. mO(litoring output current

mirror surfaces, front and rear sufaces. The rear
front one. Fig.IO shows an example of light output
monitor output becomes about O.12mA. .E
0>
:::;
0.2
m Astigmatic distance Fig. 11 Astigmatic distance

There seems to be a difference ,in luminous point 10
'. Po~3mW CW ,
in the parallel and perpendicular direction with the \ \ NA=O. 7 I I
laser beam. This distance between the two points : perpendicular
E \
\
\
\
~ directon I
is the astigmatic focal distance. Therefore, when "- \
,
,,,
\
~
4
\
,I
the laser beam is focused, there is a difference in .c;
\ \ I
'0 I
focal point in' the two directions, making it difficult 3 \- \
\
to converge the beam spot to the diffraction limit. 'Q,

"-
5
\
\ '.... ~
I
...... "
.,." parallel
'...•
~
The typical astigmatic focal distance at NA = 0.70f \ ; direction
ill '
ML5XX4 is shown in Fig.ll. '(;;
I
The LD position which minimizes the horizontal 130. Astigmatic
en distance 6.8 /1. m
o
astigmatic distance is the difference in moved o 10 20 30 40
distances thus obtained. LD moving distance (/1. m)
.• MITSUBISHI
2- 92 ..... ELECTRIC
ML5XX5 SERIES
TYPE
NAME ML5415N,ML5415C, ML5415R
ML5XX5 is a high - power AlGa As semiconductor • High power (35mW CW, 45mW pulse)
laser which provides a stable, single transverse mode • Short astigmatic distance (2!1 m typical)
oscillation with emission wavelength of 825nm and • Built- in monitor photodiode
standard light output of 30mW. • High reliability, long life
It is produced by the MOCVD crystal growth
method which is excellent in mass production and APPLICATION
characteristics uniformity. This is a high-performance, Optical disk drive (rewritable, write once)
highly reliable, and long -life semiconductor laser.

CW 35
Po light output power mW
Pulse (Note 1) 45
VRL Reverse Voltage (Laser diode) - 2 V
VRD Reverse Voltage (Photodiode) - 30 V
IFD Forward current( Photodiode) - 10 mA
Tc Case temperature - - 40-+ 60 'C
Tstg Storage temperature - - 55-+ 100 'C
Note 1: Duty less than 50 %. pulse width less than 1 /.l s.

Limits
Min. Typ. Max.
lop Operating current CW,Po=30mW - 125 150 mA
T/ Slope efficiency CW, Po = 30mW - 0.4 - mW/mA
Vop Operating voltage CW,Po=30mW - 2.0 2.5 V
AP Peak wavelength CW,Po=30mW 810 825 840 nm
81/ Beam divergence angle ( parallel) CW,Po =30mW 9 11 14 deg.
8.l Beam divergence angie (perpendicular) CW,Po=30mW 23 26 29 deg.
Im(Note 2) Monitoring output current CW, Po = 30mW. VRD = 1V, 2.0 4.0 6.0
mA
Im(Note 3) (Photodiode) RL=10Q(Note 4) 0.6 1.7 3.0
ID Dark current ( Photodiode) VRD -10V - - 0.5 /.lA
Ct Total capacitance ( Photodiode) VRD = OV, f - 1MHz - 7 - pF
..
Note 2: This specificatIOn apphes to ML5415N, ML5415C.
3 : This specification applies to M L5415R.
4 : RL is load resistance of the photodiode.
• MITSUBISHI
"'ELECTRIC 2 - 93
ML5XX5 SERIES
OUTLINE DRAWINGS
'S,
"g~K03 Dimensions in mm (3)
~~
MAX. "7.6
"6.4
~
~
PD LD
~
o (2) (1)
~ ML5415N (3)
0_
flt'!
~ 0 0 __ - Reference slot
8 + I :I:::=~s;::rf~
'" .,.
~ d
PD S LD
(2) (1)
c~~L5415C
, , 3 - ;b o. 45 ±O. 05
P. C. D. ;b 2. 54
PD CfS, LD
(2) (1)
ML5415R
2-94 . .'... ...MITSUBISHI

ELECTRIC
ML5XX5 SERIES
I Light output vs. forward current Fig. 1 Light o.utput V5. fo.rward current
Typical light eutput vs. ferward current characteristics 301r-------~------~----~_,
are shewn in Fig.l. The thresheld current fer

lasing is typically 50mA at roem temperature.
Abeve the thresheld, the light eutput increases ~
,§ 20
linearly with current, and no. kinds are ebserved in 0
0..
the curves.· An eptical pewer ef abeut 30mW is
5
obtained at Ith + 75mA. ~0
Because Ith and slepe efficiency 7J (dPo./ dlF) is 10
.E
temperature dependent, ebtaining a censtant output .21
...J
at varying temperatures requires to. centrol the case

temperature Tc er the laser current. (Centrel the
°0~------~~----1~0--0----~150
case temperature er laser current such that the
eutput current ef the built-in meniter PD becemes
censtant.)
I Temperature dependence of threshold current (lth) Fig. 2 Temperature dependence o.f thresho.ld current
A typical temperature dependence ef the thresheld 100
----
current is shewn in Fig. 2. The characteristic
70
temperature To. ef the thresheld current is typically ~
140K in Tc::;i60·C, where the definitien ef To. is Ith
oc exp (Tc/To.).
,§
:E
50 - ~
E
~ 30
::l
"
:2
0
.c: 20
'"~
.c:
I-
10
20 30 40 50 60 70
I Temperature dependence of slope efficiency ( 7J ) Fig. 3 Temperature dependence o.f slo.pe efficiency
A typical temperature dependence o.f the slepe 0.5
efficiency 7J is shown in Fig.3. The gradient is
- O.0014mW/mA/·C. ~
E
"-
~
,§
'" 0.4
r-....
~
<: ...............
~
.!!!
.11
~
Q)
c.
0
u;
0.3
o 20 40 60
• MITSUBISHI
. . . . ELECTRIC 2 - 95
ML5XX5 SERIES
I Forward current vs. voltage Fig. 4 Forward current VS. voltage

are . shown in Fig. 4. In general, as the case '/
temperature rises, the forward voltage VF decreases 40
slightly against the constant current IF. VF varies <-
-5
typically at a rate of - 1.6mV/oC at IF = 1mA. .!: 30
E
!!!
:;
u 20
Tc=50°C--.".
'E
~ " Tc= 25°C
0
u. 10 I
o
)
o 1.0 2.0

Wavelength A (nm)
m Temperature dependence of peak wavelength Fig. 6 Temperature dependence of peak wavelength

P o =30mW
wavelength at an output of 30mW is shown in Fig. 6.
---
As the temperature rises, the peak wavelength 831
E
shifts to the long wavelength side at a rate of -5
"-
about O.20nm/oC typical. 830
'"-S
~
'"c: J
..
~
~
..
...,
Q)
a..
829
828
v---
r r-
827
25 30 35 40
Case temperature Tc (Oc)
'.. .MITSUBISHI
2 - 96 ..... ELECTRIC
ML5XX5 SERIES

&I Far - field pattern in plane parallel to heterojunctions 8/1
transverse (TEoo) mode and the mode does not (J II

emitting area (size of near-field pattern) of 2.3 x ~
0.9 II m'. Fig.7 and Fig.8 show typical far- field "
c.
'5o
planes. 10mW
are typically 11 0 and 26. 0 • I
-30
Fig. 8 Far- field pattems

in plane perpendicular to heterojunctions ().L
(J.L
"c.
'5o
II Optical output vs.monitoring output characteristic Fig. 9 Light output vs. monitoring output current
.5 20 /
/
front one. Figure 9 shows the typical front beam
output vs. monitoring output current characteristics
0
<l.
'5c.
/
of ML5415N and ML5415C. When the front beam
output is 30mW. the monitoring output becomes
'5
0
~
.<=
10
/
/
4.0mA typical. (With ML5415R. the monitoring .2'
/
...J
output becomes 1. 7mA typical when the front

beam output is 30mA.) o
o 4 5
Monitoring output 1m (rnA)
• MITSUBISHI
"'ELECTRIC 2- 97
ML5XX5 SERIES
II Polarization ratio VS.optical output characteristic Fig. 10 Polarization ratio vs. light output
The main polarization of ML5XX5 is made in the
N. A. =0.65
ratio refers to the intensity ratio of the light -i 2001----l__---l__---,.,I
polarized in parallel to the active layer to the light ~
polarized in perpendicular to it. Figure 10 shows ~
.2
the standard polarization ratio vs. total light '§
c:
output characteristic. .2 100 I----o>'~---l__----I
The polarization ratio increases with the light .~
1ii
power. ~
OL-----~------~------~
o 10 20 30
• Impedance characteristics Fig. 11 Impedance characteristics

with lead lengths of 2mm, are shown in Fig.11
frequency is swept from 100MHZ to 1300MHZ with
100MHz steps.
Above the threshold, the impedance of the
ML5XX5 is nearly equal to a series connection of
a resistance of 4 ohm and an inductance of 3nH.
II SIN VS. optical feedback ratio Fig. 12 S/N vs. optical feedback ratio
f=20kHz, BW=300Hz
S/Nvs. optical feedback ratio, where the frequency 40~-------r------~-n~~

Fig.12. That where the frequency is 10MHz and 50
the bandwidth is 300kHz is shown in Fig.13.

S/N ratio is worst on CW driving and on HF
superimposed driving, when case temperature is 25 70
-50"C and atmosphere temperature is 25 "C. The z
"-
(/)
--0-
.-- .... ...-- ---

frequency and input level of HF superimposition 80IH-----I---+----.30.--l-+~---I 3mW CW
, ---{}---
are about 700MHz, 35mAp -
,/
P. 30mWCW
90
---.-
100~~~~~~~~~~~~~
- 3mW HF
00.01 0.050.10.20.5 1 2 5 10
. • MITSUBISHI
. . . . ELECTRIC
ML5XX5 SERIES

f=10MHz, BW=300kHz
CD
'C
z
en 80
--0--
3mWCW
9 0 H - - - - - + - - - - + - - - - j ;~~~~
- ....... -
100 3mW HF
o 0.01 0.05 O. 1 O. 2 0.5 1 2 5 10
Optical feedback ratio (%)
III Astigmatic focal distance Fig. 14 Astigmatic focal distance

P o =3mWCW I
in the parallel and perpendicular direction with the I
NA=0.7
laser beam. This distance between the two points E I
I

~
~
.t=
'" I
I
I
~
I
the laser beam is focused, there is a difference in I I
I
I
focal point in the two directions, making it difficult N",
I.
I
5 , "
to converge the beam spot to the diffraction limit. "-
~
"'~\ ...... -II..
l _,
- r>:~ -i - parallel
The typical astigmatic focal distance at NA = 0.7 ~
.~
VI
\
\
~ direction
of ML5XX5 is shown in Fig. 14.
~J
' perpendicular
l5
Cl direction
The LD position which minimizes the horizontal (/)
Astigmatic
and vertical spot diameters is obtained. The o I distance 3.2 I.t m

LD moving distance (I.t m)
II Wave front distortion characteristics Fig. 15 Wave front distortion

Typical wave front distortion (mainly astigmatism) RMS: 0.014 P-v: O. 129
of ML5XX5 is shown in Fig.15. This figure shows P o =3mW CW
NA=0.25
-1.0
collimated.
Various aberrations are .calculated by Zernike's
polynomial approximation for the interference
fringes observed by the Mach - Zehnder
interferometer. 0.025
-0.007
-0.039
-0.071
-1.0 -0.5 0.0 0.5 1.0
parallel direction
• MITSUBISHI
..... ELECTRIC 2-99
ML6XX1A SERIES
TYPE
NAME ML6101A, ML6411A, ML6411C
ML6XX1A is a high-power semiconductor laser .High power (CW'20mW)
which provides a stable, single transverse mode • Single longitudinal mode
oscillation with emission wavelength of 780 nm • Short astigmatic distance
and standard light output of 10mW. • Low noise
ML6XXl A uses a hermetically sealed package • Low threshold current, low operating current
incorporating the photodiode for optical output • Built- in monitor photodiode
monitoring. This high-performance, highly reliable, and • High reliability, long operation life
long -life semiconductor laser is suitable for such
high - power applications as optical disk memory APPLICATION
writing. Optical disk drive, laser beam printer, optical
com munication

CW 20
Pulse (Note 1) 25
VRD Reverse votage (Photodiode) - 15 V
Note 1: Duty less than 50 %. pulse width less than 1 11 s.
Limits
min. Typ max.
lop Operating current CWo Po= 10mW - 65 100 mA
TJ Slope efficiency CWo Po = 10mW - 0.4 - mW/mA
AP Peak wavelangth CWo Po = 10mW 765 780 795 nm
81/ Beam divergence angle (parallel) CWo Po = 10mW 10 12 17 deg.
8J. Beam. divergence angie (perpendicular) CWo Po = 10mW 20 30 35 deg.
Monitoring output current CWo Po= 10mW
1m VRD= lV 0.3 0.8 1.7 mA
ID Dark current (Photodiode) VRD = 10V - - 0.5 I1A
. •...". MITSUBISHI
2-100 .... ELECTRIC
MITUBISHI LASER DIODES
ML6XX1A SERIES
OUTLINE DRAWINGS
Dimensions in mm
16±0.25
PD ,5,
~/I
(2)
(3)
(1)
LD
Reference
plane
Dimensions in mm
~
'"
,2
,£;
'"'" -
~~Ik~~:rl=i~~
Reference slot
PD
R
(2)
(3)
II
5
ase
(1)
II
LD
'"o .,.. ML641lA

°
g;: ;ti
0
(3)
flt~
°t==4lfi'=:=='I=S'!I'
PD ,5 LD
(2) (1)
3- 10. 45±0. 05
P. C. D. 12. 54 ML641lC
• MITSUBISHI
"ELECTRIC 2 -101
MITUBISHI LASER DIODES
ML6XX1A SERIES
Typical ,light output vs. forward current 25
characteristics are shown in Fig. 1. The threshold
current for lasing is typically 40mA at room 20
temperature. Above the threshold, the light output ~
.s
0
<l.
15
observed in the curves. An optical power of about ~
:J
10mW is obtained at Ith + 25mA. S::I
0 10
Because Ith and slope efficeency TJ (dPo/dIF) is 1:
temperature dependent, obtaining a constant output '"
::;
5
temperature Tc or the laser current. (Control the 0
case temperature or laser current such that the 0 30 120
Forward current IF (mA) .
constant:) * Duty less than 50 % pulse width less than 1 p. s.
II Temperature dependence of threshold current (Ith) Fig. 2 Temperature dependence' of threshold current
70
temperature To of the threshold current is typically
140K in Tc;:;; 60°C, where the definition of To is Ith
cx:exp (Tc/To).
~
.s
:E
E
~
:J
50
40
30
- ---- ~
"
:2
0 20
.<::
Ul
~
.<::
f-
10
20 30 40 50 60 70
II Temperature dependence of slope efficiency ( TJ ) Fig. 3 Temperature dependence of slope efficiency

A typical temperature dependence of the slope o. 5r----~---"T""'---...,
efficiency TJ is shown in Fig. 3. The gradient is -
0.001 mW/mA/oC. ~
E
"'-
?:
.s
0
'">-
"c:
:Q
~
.,
0.
0
0.4
--
(jj
0.3
0 20 40 60
.•. '. MITSUBISHI

2-102 . . . . ELECTRIC
ML6XX1A SERIES


temperature rises, the forward voltage VF decreases :;(
30
slightly against the constant current IF. VF varies ,5
.!!o
typically at a rate of - 2.0mV/"C at IF = 1mAo
E
~ 20
"
u Tc~50'C
'E
~
0 10 l 25C
J
"-
o
o 1.0 2.0
Forward voltage VF 01)

Tc=25"C
XI 20mW
X2 10mW
X31.6
XI60 ~ I
3mW
Ith
764 774 784
Wavelength A (nm)

Po=IOmW
in Fig.6. E 780
5
Cl
""-E 779
1/
.,'">
~
c:
., 778
J
~
~
'"
~ 777
776
25 30 35 40
. • MITSUBISHI
;"ELECTRIC 2-103
ML6XX1A SERIES
I Far-field pattern
The ML6XXI A laser diodes lase in fundamental
to heterojunctions ell
change with the current. They have a typical ell
emitting area (size of· near - field pattern) of
0.7 x 2.0 pm'· Fig. 8 show typical farfield radiation
'5
patterns in "parallel" and "perpendicular" planes. S:J
o
are typically 12· and 30·.
-30

to heterojunctins e.l
'5
c.
'5
o
II Pulse response waveform

Fig. 9 Pulse response waveform
.the main concerns. In order to shorten the
oscillation delay time, the laser diode is usually
biased close to the threshold current, Figure 9
biasing ML6XXI A to Ith and applying a square
pulse current (top of Fig. 9) up tol OmW. A Quick
response is obtained with rising and falling times
being 0.3ns and O.4ns typical respectively.
Time (nsec.)
'. . MITSUBISHI
2 -104 ..... ELECTRIC
, Mil ~U"I;'"I ~;'I:.n ..,."'..,....
ML6XX1A SERIES
The laser diodes emit beams from both of their 15r--------r~--~-------,

§ 10
front ,one. Fig. 10 shows an example of light ~
output vs. monitoring photocurrent characteristics. Sa.
When the front beam output is 15mW, the monitor 5
0
output becomes about 1.0mA. 1: 5
.S!'
...J
• Polarization ratio vs. light output characteristic Fig. 11 Polarization ratio vs. light output
The main polarization of ML6XX1 A is made in the 500
ratio refers to the intensity ratio of the light -i 400
/
/
0..
polarized in, perpendicular to it. Figure 11 shows ~

0.. 300
the standard polarization ratio vs. total light output .2
characteristic. The polarizastion ratio increases with
the light power.
~
.§ 20 0 L
J
~ 100
V
/
o
o 5 10 15 20 25

Dllmpedance characteristics
Typical impedance characteristics of the ML6XX1 A,
with lead lengths of 2mm, are shown in Fig. 12
frequency is swept from 100MHz to 1300MHz with
100MHz steps.Above the threshold, the impedance
of the ML6XX1A is nearly. equal to a series
connection of a resistance of 30hm and an
inductance of 3nH.
2-105
ML6XX1A SERIES
II SIN va. optical feedback ratio Fig. 13 S/N vs. optical feedback ratio
f=20kHz, BW=300Hz, Tc=25~50'C
S / N vs. optical feedback ratio, where the 60
frequency is 20kHz and the bandwidth is 300Hz is
shown in Fig. 13. That where the frequency is 70 K p
10MHz and the bandwidth is 300kHz is shown in
Fig. 14. S/N ratio is worst on CW driving and on 80
/ '"\ ,
I
I
I
I
HF superimposed driving, when case temperature is .I \ I

I
25 ~ 50°C and atmosphere temperature is 25 "C 90 /---(}..--< )---~~ .;j --0--

respectively. The frequency and input level of HF (
0,
--
3mWCW
superimposition are about 700MHz, 35mAp- p. ---0---
100
r - - o- 20mWCW
3mW HF
11 0
o 0.01 0.1 10

f=10MHz, BW=300kHz, T c =25-50'C
50
~}...I
~
, ~
60 ..d
:>- --~~ :t:.r-o.-.()'"~
:r ''0...:.:::
, 1. - --'''::'
0
'g 70
z
..... 1/
(j)
80 --0--
3mWCW
--
---0---
9a 20mW CW
3mW HF
100
a O. 01 0.1 10

There seems to be a difference in luminous point 10 Po 3mWCW
,
in the parallel and perpendicular direction with the , NA=0.7
E ,, ,
~
"- ,
. ,,,
:2
~
,, . '~,
,.
,
,,
..........
.
focal point in the two directions, making it
0
5 ,, ,
~
diffeicult to converge the beam spot to the
diffraction limit. The typical astigmatic focal
0
.~til
~ ·t-;'~;·\~."
.0, " perpendicular
distance at NA = 0.7 of ML6XX1A is shown in (5
C>
14 direc,tion
Fig. 15. The LD position which minimizes the <Il Astigmatic distance 4.0 fl m
horizontal and vertical spot diameters is obtained. a

a
II
10
I I
20 30
The astigmatic distance is the difference in moved
distances thus obtasined. LD moving distance (fl m)
2 -106
ML6XX1A SERIES
FOR OPTICAL INFORMATION SYST.EMS
• Wave front distortion characteristics Fig. 16 Wave front distortion

Typical wave front distortion (mainly astigmatism) RMS: O. 018 P-V: 0.155
of ML6XX1A is shown' in Fig. 16. This figure P o =3mW CW
NA=0.25
shows wave front (phase front) when laser beam
is collimated. Various aberrations are calculated by
Zernike • s polynomial approximation for the
interferometer.
-0.050
-0.089
-1. 0 -0.5 0.0 0.5 1.0
parallel direction
.,' MITSUBISHI
JJhJ..ELECTRIC 2-107
ML6XX3A SERIES
TYPE
NAME ML6413A, ML6413C
ML6XX3A is a high- power semiconductor· laser • Optical power 15mW CW
which provides a stable. single transverse mode • Low threshold current, low operatihg current
oscillation with emission wavelength of 780nm • Built- in monitor photodiode
and standard light output of 10mW. • High reliability, long operation life
ML6XX3A uses a hermetically sealed package
monitoring. This high- performance, highly reliable, Optical disk drive. high speed laser beam printer
and long - life semiconductor laser is suitable for
such high - power applications as optical disk
memory writing and the light source for high-speed
printer.

Po Light output power CW 15 tnW
VRO Reverse voltage (Photodiode) - 15 V
IFO Forward current (Photodiode) - 10 mA
Tc Temperature - - 40-+ 60 "C
T.tg Storage temperature - -55-+ 100 "C

Limits
Min. Typ. Max.
lop Operating current CW.Po= 10mW - 65 100 mA
1/ Slope efficiency CW.Po-l0mW - 0.4 - mW/mA
it P Peak wavelength CW.Po= 10mW 765 780 795 nm
(JII Beam divergence angle (parallel) CWo Po= 10mW 10 12 17 deg.
(Jl. Beam divergence angle(perpendicular) CW.Po= 10mW 20 30 35 deg.
Monotoring output current CWo Po= 10mW
1m VRO= lV 0.3 0.8 1.7 mA
CPhotodiode) RL=lQQ (Note 1)
10 Dark current (Photodiode) VRO= 10V - - 0.5 A
/1.
Ct Total capacitance (Photodiode) VRO - OV. f - 1 MHz. - 7 - pF
Note 1: Rt is load resistance of the photodiode.
..• MrrsuBIsHI
2-108 .... ELECTRIC
ML6XX3A SERIES
OUTLINE DRAWINGS
¢ 9 :1::8.03 Dimensions in mm
n.6
MAX.
...(3)
PO
~
1/
S
/J
LO
(2) (1)
k~~~~- Reference' slot ML6413A
...(3)
PO
~
1/
S
II
LO
, , 3- ¢0.45±0.05, (2) (1)

P. C. D. ¢ 2. 54
ML6413C
111131121
2-109
ML6XX3A,SERIES
a Light ouput vs forward current

Typical light output vs forward current characteristics
Fig. 1 light output vs. forward current
'5r----r---,----.--,~-,~
are shown in Fig. 1. The threshold current for lasing

is typically 40mA at room temperature. An optical
~
power of about 10mW is obtained at Ith + 25m A. § 10
Because Ith and slope efficiency 1/ (dPo/dIF) is o·
Co.
temperature dependent, obtaining a constant output ':;

.9-
at varying temperatures requires to control the case :J
0
temperature Tc or the laser current. (Control the case 1:Cl

:.J
temperature or laser current such that the· output
current of the built-in monitor PD becomes constant.)
o~ __~__~~~--~--~
o 20 100
II Temperature dependence of thre,shold current (Ith) Fig. 2 Temperature dependence of threshold current
-
50
temperatu~e To of the threshold current is typically
<' f...-- ~
140K in Tc;;;; 60°C, where the defintion of To is Ith
oc exp (Tc/To).
§
:E
40
30
-
E
~
:;
()
32 20
0
.s:;
(II
~
.s:;
I-
10
20 30 40 50 60 70
iii Temperature dependence of slope efficiency Fig. 3 Temperature dependence of slope efficiency
efficiency 1/ is shown in Fig. 3. The gradient is
- 0.001 mW/mA/oC. <'E
"-
;3:
§
'"> 0.4 ~
~
g
.9!
.11
~
CI>
0-
.Q
V)
20 40 60
2 - 110 '.' MITSUBI.

..... ELECTRIC SHI
ML6XX3A SERIES
II Forward current vs. voltage Fig. 4 Forward current vs. voltage

Typical forward current vs. voltage characteristics are 50
shown in Fig. 4. In general, as the case temperature
rises, the forward voltage VF decreases slightly 40
against the constant current IF. VF varies typically
at a rate of - 2.0mV/"C at IF = 1mA. 30
Tc=50'C~
20
T~=25'C ~
0
o
)
o 1.0 2.0
Te - 25"C
single mode is observed. The peak wavelength depends
on the operating case temperature ana forWard
current (output level).
Xl 15mW
Xl 10mW
X7.9 3mW
X250 Ith
771 781 791
Wavelength A (nm)

Po=lOmW
in Fig. 6.. E 785
-5
Co
"'
.c
784
1/
about O.25nm/oC typical. c;;
c:
~
., 783 J
~
~ 782
~
78 ,
25 30 35 40
• .MITSUBISHI
"'-ELECTRIC 2 -111
ML6XX3A SERIES

I Far-field pattern in plane parallel to heterojunctions 0/1
The ML6XX3A laser diodes lase in fundamental
transverse (TEoo) mode and the mode does not 9/1
change with the current. They have a typical emitting

area (size of near-field pattern) of 2.0 x 0.7 f.l rn'. Fig. 7 0
c..
shown typical farfield radiation patterns in "parallel" :;
0.
and ·perpendicular" planes. :;
0
The full angles at half maximum points (FAHM) :.=
g
are typically 12· and 30·.
"
.~
~
-30 30
Off-axis. angle (deg.)

in plane perpendicular to heterojunctions OJ..
::J
S::J
o
Olf- axis angle (deg.)
m Monitoring output
Fig. 9 Light output vs. monitoring output current
mirro surfaces, front and rear surfaces. The rear

front one. Fig. 9 shows an example of light output
the front beam output is 1OmW, the monitor ::J
0.
:;
output becomes about 0.8mA. o
or;
.2'
...J
1. 5 2.0
. •. MITSUBISHI
2 -112 If&ELECTRIC
ML6XX3A SERIES
I Astigmatic distance Fig. 10 Astigmatic distance

There seems to be a difference in luminous point 10 Po 3mWCW
,
in the parallel and perpendicular directions with the , NA~O. 7
E , ,
laser beam. This distance between the two points "- , ,
~
,, ,,
is the astigmatic focal distance. Therefore. when :;: ,
:§ ,, , ,
the laser beam is focused. there is a difference in
focal point in the two directions. making it difficult
~
N., '~, , ,- ....
, '
,,
,
to converge the beam spot to the diffraction limit. "-

::.
5 ,
.
- ...... i--· .. " . parallel
..
Q) direction
The typical astigmatic focal distance at NA = 0.7 of .~ .-' F-- perpendicular
' '
ML6XX3A is shown in Fig. 10. The LD position '00. direction
I
VI
which minimizes the horizontal and vertical spot Astigmatic
dista?C9 4.0 /1. m
diameters is obtained. The astigmatic distance is o
the difference in moved distances thus obtained. o 10 20 30
LD moving distance (/1. m)
II Wave front distortion characteristics Fig. 11 Wave front distortion

Typical wave front distortion (mainly astigmatism) RMS: 0.018 P-v : 0.155
Po~3mW CW
of ML6XX3A is shown in Fig. 11. This figure shows NA~0.25

c:
collimated. Various aberrations are calculated by 0
'e~
o:~
Zernike • s polynomial approximation for the .!a ~
"0$
E· 5 ,f;
interferomerer. .g.~ :c 0.066
!~ O. 028
~e;
-0.011
-0. 050
1.0
-0. 089
-1.0 -0.5 O. a 0.5 1.0
parallel direction
• MITSUBISHI
"ELECTRIC 2 -113
ML6XX10 SERIES
TYPE
NAME ML64110N, ML64110C, ML64110R
ML6XX10 is a high - power AIGaAs semiconductor • Output 35mW (CW), 45mW (pulse)
laser which provides a stable, single transverse • Short astigmatic distance
oscillation output with emission wavelength of • Built- in monitor photodiode
785nm and standard light output of 30mW. • Highly reliable, long operation life
ML6XX10 is produced by the MOCVD crystal
growth method which is excellent in mass APPLICATION
production and characteristics uniformity. This is a Optical disk drive (rewritable, write once)
high- performance, highly reliable, and long-life
semiconductor laser.

CW 35
Pulse (Note 1) 45
VRL Reverse voltage (laser diode) - 2 V
Tc Case temperature - -40-+ 60 'c
Note 1: Duty less than 50 %, pulse width less than 1 il s.
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc = 25'C)
Limits
Min. Typ. Max.
T/ Slope efficiency CW.Po =30mW
,
- 0.4 - mW/mA
AP Peak wavelength CWo Po=30mW 770 785 800 nm
8 II Beam divergence angle (parallel) CWo Po =30mW 9 10.5 13 deg.
8l. Beam divergence angle (perpendicular) CW.Po =30mW 24 26.5 28 deg.
1m Monitoring output current CWo Po = 30mW. VRD = lV. RL= 10 Q 1.0 3.0 6.0 mA
1m (Note 1) (Photodiode) (Note 3) 0.6 2.7 4.0 mA
ID Dark current (Photodiode) VRD = 10V - - 0.5 ilA
Ct Total 'capacitance (Photodiode) VRD = OV. f = 1MHz - 7 - pF
Note 2: Applicable to ML64110R.
3 : RL = the load resistance of photodiode.
, " MITSUBISHI
2 -114 . . . . ELECTRIC
ML6XX10 SERIES
OUTLINE DRAWINGS
-:
II 9 ~ 8.03
MAX.ql7.6
116.4
Dimensions in mm
.
PO
A (3)
1/
S
"se
II
LO
i (2)
ML64110N
(1)
(3)
,;'" do
A
Reference slot
8+1!=~~~~
~ 1/ asa
I;
PO S LO
3 - ql 0.45 ± 0.05
p.e.D. ql2.54
PO
Asa
I;
(2)
(3)
S
(1)
(2)
ML64110C
II
LO
. (1)
(1)(3)(2) ML64110R
2 -115
ML6XX10 SERIES
I Light output vs. forward current characteristics Fig. 1 Light, output vs. forward current
Figure 1 shows the typical light output vs. current 30r------,r-----~--~--~
characteristic of ML6XX10. The threshold current

Ith at room temperature is about 70mA. The
optical output linearly increases at currents larger
20r-------r------+--~r-~
than Ith and no kink .is observed. An optical output' ~
of about 30mA' can be obtained at Ith + 70mA. '50.
Because Ith and slope efficiency TJ (dPo/dIF) is '5o
temperature dependent, obtaining a constant output 10r-------t------.~~--~

temperature Tc or, the laser current. (Control the
o~----~--~~~----~
output current of the built-in monitor PO becomes o 50
constant.)
I Temperature dependance of threshold current Fig. 2 Temperature dependence of threshold current

A typical temperature depndence of the threshold
current of ML6XX10 is shown in Fig. 2. The
l00~=r::+=~~~~
70 -
characteristic temperature To of the threshold ~
current is typically about l60K in Tc ;:a; 60"C, where ..s 50
the definition of To is Ith cc: exp (Tc/To).
:E
E
!!
~ 30
u
:sO!
0
""~ 20
""
I-
10.~ __~__~____~__~__~
20 30 40 50 60 70
II Temperature dependance of slope efficiency Fig. 3 Temperature dependence of slope' efficiency

A typical temperature dependance of the slop 0.5 ; - - - - . , - - - - . , - - - - - ,
efficiency TJ of ML6XXlO is shown in Fig. 3. The
gradient is - O.0013mW/mA/"C typical.
0.3~ _ _ _"___ _ _"--_ __

o 20 40 60
• .MITSUBISH,'I
2-116 .... EI..ECTAIC
ML6XX10 SERIES
III Forward current vs. voltage characteristic Fig 4 Forward current vs. voltage
of ML6XX10 are shown in Fig. 4. In general, as the
case temperature rises, the forward voltage VF 40
decreases slightly against the constant current IF. VF <'
.5
varies typically at a rate of - l.4mV/OC at IF = 1mA. .!!o 30
E
~
"" 20
Tc- 50'C"
1
0
u.. 10
Tc= 5'C
o
))
o 1.0 2.0
Fig. 5 Light output· dependence of

II LIght output dependence of emission spectra emission spectra Light intensi.ty
. Typical emission spectra of ML6XX10 under CW
Te=25'C
operation are shown in Fig. 5. In general, at an
output of 30mW, the laser oscillates in the single
mode. The peak wavelength depends on the
current (light output level) and the case temperature.
.r::
Ol
~
X1 30mW
X2 10mW
X100 3m'W
X400 r---" Ith'i
773 783 793
Wavelength .l. (nm)
Fig. 6 Case temperature dependence

I Temperature dependence of emission spectra of oscillation wavelength
A typical temperature dependence of the peak 783r-------r-------r------,
oscillation wavelength of ML6XX10 at a constant E
-5
output (CW, 30mW) is shown in Fig. 6. .,
~
782
As the temperature rises, the peak oscillation .r::
0,
c:
wavelength shifts to the long wavelength side at .!!2
~
a rate of about O.20nm/OC typical. OJ
781
it
c:
.2
~
~ 780
...
0
~
779L-------~-------L------~
25 30 35 40
Case temperature Te ('C)
. • MITSUBISHI
.... ELECTRIC 2 -117
ML6XX10 SERIES
I Far - field pattern Fig. 7 Far field pattern 8'/1

ML6XX10 oscillates in the fundamental transverse
8//
mode (TEoo) regardless of light output level. The
30mW
typical size of the light emitting area (the spot size
~
of near field pattern) is about 2.3 Ii- m x 0.9 Ii- m.
"
0.
So
Figures 7 and 8 respectively show the typical
near field patterns which are parallel (e /I) and
perpendicular (e.L) to the active layer. The full
angles at half maximum points are typically 1 1 0
and 26 0 •
Angle (deg.)
Fig. 8 Far field pattern (}.L
8.L
"
B
o"
Angle (deg.)
Fig. 9 Light output vs. monitor output

current characteristic
I Light output vs. monitoring output characteristic
The laser diode emits beams from both the front
and rear sides. The intensities of these beams are
30
v
v
in proportional relationship. Therefore, the rear
beam is used for monitoring the front beam .
Figure 9 shows the typical front beam output vs. ~
monitor output current characteristic of ML641 10N

"
B
v
"o
and ML641 10C. 1: 10
Ol
When the front beam output is 30 mW, the :.J
monitor output typically becomes 3.0mA. With

ML641 lOR, when the front beam output is 30mW, o
the monitor output typically becomes 2.7mA. o 2 3 4 5
Monitor output current 1m (rnA)
• MITSUBISHI
2 -118 . . . . ELECTRIC
ML6XX10 SERIES
I Polarization ratio vs. light output characteristic Fig. 10 Polarization ratio vs. light output
The main polarization of ML6XX10 is made in the
NA =0.5
ratio refers to the intensity ratio of the light --l 200
CI.
polarized in parallel to the active layer to the light ~
polarized in perpendicular to it. Fig. 10 shows the CL
0
standard polarization ratio vs. total light output .~
characteristic. The polarization ratio increases with c:

0 100
.~
the light output. .!:!
S0
CI.
O~----~------~----~
o 10 20 30
II Impedance characteristic Fig. 11 Impedance

Typical impedance characteristic of ML6XX10, with
a lead length of 2mm and the bias current being
used as the parameter is shown in Fig. 11. Test
frequencies are 100MHz to 1300MHz in steps of
100MHz.
Above the threshold! the impedance of ML6XX10
is nearly equal to a series connection of a
resistance of 40hms and an inductance of 3nH.

f = 20kHz, BW = 300Hz
II SIN vs. optical feedback ratio characteristic ~~------'-------r-----,
S / NA vs. optical feedback ratio, where the

frequency is 20kHz and the bandwidth is 300Hz is 50
shown in Fig. 12. That where the frequency is
60~------4-------r+--~-1
10MHz and the bandwidth is 300kHz is shown in
Fig. 13. S/N ratio is worst on CW driving and HF
z 70
superimposed driving, when case temperature is 25 .....
en
°C to 50°C and ambient temperature is 25 °C. The -0--
frequency and input level of HF superimposition 3mW CW
--~
are the values obtained at about 700MHz and 30mW CW
about 35mAp- p, respectively.
Feedback ratio Rf (%)
2 -119
ML6XX10 SERIES
Fig .. 13 S/N VS. optical feedback ratio

f = 1OM Hz. BW = 300kHz
50~-------r~----'-------'
60
z
Vi 80
--0--
3mW CW
90 H - - - - + - - - - + - - - - - - j 30~CW
-.-+---
3mW HF
1004~~--J--L~--~~-L--~
o0.01 0.05 0.1 0.2 O. 5 1 2 5 10

. Po=3mW. CW
in the parallel and perpendicular directions with the '.NA=0.7
E ,,
laser beam.This distance between the two points is
the astigmatic focal distance. Therefore. when the
,5
'., 1/
• ,,,
....
:2
~
laser beam is focused. there is a difference in focal
.,~ .'. .
point in the two direcctions. making it difficult to
converge the beam spot to the diffraction limit.
"-
G
5
'
...... .;_.. -!-..
/'
'-1- -'C r -
.~- .....
The typical astigmatic focal distance at NA = 0.7 of !E "
'I
'~arallel
direction
.
ML6XX10 is shown in Fig. 14. .!!!
"C
_, Perpendicular
The LD position which minimizes the horizontal 00. ~ direction
Vl
Astigmatic
o I- distance 3.6 Jl. m

LD moving distance (Jl. m)
Fig. 15 Wave frong distortion

II Wave front distortion characteristic RMS: 0.023 P-V: 0.089
Typical wave front distortion (mainly astigmatism) Po = 3mW.CW
of ML6XX10 is shown in Fig. 15. This figure· shows NA = 0.25
wave front (phase front) when the laser beam is
collimated. VCirious aberrations are calculated by
Zernike • s polynomial approximation for the -0.5
interferance fringes observed by the Mach - Zehnder
0.037
interferometer.
!41 ~',_. ' - = = . 0.5

0.015
-0.007
- 0.030
>---+---r----t--_--.---+---t-._ 1. 0 -0.052
-1. 0 -0.5 0.0 0.5 1. 0
Parallel direction
• MITSUBISHI
2-120 .... ELECTRIC
Ml6XX11 SERIES
TYPE
NAME Ml60111 R, Ml64111 N
ML6XXll is a high- power AIGaAs semiconductor • Output 35mW (CW), 45mW (pulse)
mode oscillation with emission wavelength of • Built- in monitor photodiode
785nm and standard light output of 30mW. • Low lop specifications
ML6XXll is produced by the MOCVD crystal
production and characteristics uniformity. This is· a Optical disk drive (rewritable, write once)
high- performance, highly reliable, and long-life

CW 35
Po light output power mW
Pulse (Note 1) 45
VRL Reverse voltage Claser diode) - 2 V
Tc Case temperature - - 40-+ 60 -C
Tstg Storage temperature - -55-+ 100 ·C
Note 1: Duty less than 50 %. pulse Width less than 1 fJ. s.

Limits
Min. Typ. Max.
Ith Threshold current CW - 60 75 rriA
lop Operating current CW.Po =30mW - 120 135 mA
T/ Slope efficiency CW. Po = 30mW - 0.5 - mW/mA
Vop Operating voltage CW.Po-30mW - 2.0 2.5 V
). P Peak wavelength CW.Po=30mW 770 785 800 nm
011 Beam divergence angle (parallel) CW.Po=30mW 9 10.5 13 deg.
OJ. Beam divergence angle (perpendicular) CW.Po=30mW 24 26.5 28 deg.
1m Monitoring output current CWo Po = 30mW. VRD = 1V. RL= 10 Q - 0.9 - mA
1m (Not. 2)(Photodiode) (Note 3) - 0.7 - mA
ID Dark current (Photodiode) VRD = 10V - - 0.5 fJ.A
Ct Capacitance (Photodiode) VRD - OV. f - 1 MHz - 7 - pF
Note 2: Applicable to ML60111 R.
. .'.. . ELECTRIC
MITSUBISHI 2 - 121
ML6XX11 SERIES
OUTLINE DRAWINGS
¢B:: 8.03 Dimensions in mm
MAX.¢ 7.6
¢6.4
Reference slot
PD
fi
(2)
II
.s
(3) Case
(1)
II
LD
(1 )(3)(2)
Dimensions in mm
PD
A
(2)
II
.s
(3) Case
(1)
II
LD
h2=;:j::;=::i,-r Reference plane
3 - 0.45 ¢
(11(3)(21
2-122 . .'.
. . . MITSUBISHI
ELECTRIC .
ML6XX11 SERIES
I Light output va. forward current characteristic Fig. 1 Light output vs. forward current
Figure 1 shows the typical light output vs. current 30~-----,,------,--,,~,
characteristic of ML6XXll. The thershold current

Ith at room temperature is about 60mA. The optical
output linearly increases at currents larger than Ith ~
5 20~--~--+-------~~--~
and no kink is observed. An optical output of
~
about 30mW can be obtained at Ith + 60mA. S
Because Ith and slope efficiency 1} (dPo! dlF) is ~o
temperature dependent, obtaining a constant output ~ 10~------4-----~~------~
at varying temperatures requires to control the case '"

:J

output current of the built-in monitor PO becomes 50 100 150
constant.) Forward current IF (mA)
I Temperature dependence of threshold current Fig. 2 Temperature dependence of threshold current

A typical temperature dependance of the threshold 100
current of ML6XXll
characteristic
is shown in Fig. 2.
temperature To of the
The
threshold
current is typically about l60K in Tc ;:;; 60°C, where
<
5
70
- -
50
the definition of To is Ith oc exp (Tc/To). ~
1:
~:J 30
()
:s!
0
.<=
20
'"
~
.<=
r
10
20 30 40 50 60 70
Fig. 3 Temperature dependence of slope efficiency

I Temperature dependence of slope efficiency
A typical
< temperature dependence of the slope 0.6 ~-----,---------,--------,
efficiency 1} of ML6XXll is shown in Fig. 3. The

gradient is - O.0012mW! mA/oC typical.
0.4 L -_ _ _ _ _ _--'-_ _ _ _ _ _- ' -_ _ _ _ _ _- '
o 20 40 60
• MITSUBISHI
..... ELECTRIC 2 -123
ML6XX11 SERIES
II Forward current vs. voltage characteristic Fig. 4 Forward current VS. voltage
of ML6XXll are shown in Fig. 4. In general,as the
case temperature rises, the forward voltage VF 40
decreases slightly against the constant current IF.
<
5
VF varies typically ,at a rate of - 1 .4mV I t at ,!!,
30
E
IF = 1mA. i!!
:;
() "Tc = 25 ·c
'0
20
~
i:0 Tc=50'C.......
u. 10
o JJ
o 1.0 2.0
I LIght output dependence of emission spectra Fig.5 Light output dependence of emission spectra
Typical emission spectra of ML6XXll under CW
Tc=25'C
operation are shown in Fig. 5. In general, at an
output of 30mW, the laser oscillates in the single
mode. The peak wavelength depends on the current
(light output level) and the case temperature.
X1 30mW
X2 10'11W
X50 3m W
x\000
Ith
775 785 795
Wavelength A (nm)
II Temperature dependence of emission spectra Fig. 6 Case temperature dependence of oscillation wavelength
A typical temperature dependence of the peak 789~------~------~------,
Po = 30mW
oscillation wavelength ML6XXll at a constant E
output (CW, 30mW) is shown in Fig. 6. -5
As the temperature rises, the peak oscillation
wavelength shifts to the long wavelength side at
rate of about O.20nm/oC typical.
785~------~--~---L------~
25 30 35 40
.• MITSUBISHI
2-124 "'ELECTRIC
ML6XX11 SERIES
I Far field pattern Fig. 7 Far field pattern (J "

ML6XX11 oscillates in the fundamental transverse
8/1
mode (TEoo) regardless of light output level. The
30mW
typical size of the light emitting area (the spot size
of near field pattern) is about 2.3 JJ. m x 0.9 JJ. m.
Figures 7 and 8 respectively show the typical near
field patterns which are parallel (8 II) and
perpendicular (8 J.) to the active layer. The full
angles at half maximum points are typically 11 0
and 26 0 •
Angle (deg.)
Fig. 8 Far field pattern (J J.
S0.
So
Angle (deg.)
I Light output vs. monitoring output characteristic Fig. 9 Light output vs. monitor output current
The laser diode emits beams from both the front 30
and rear sides.The intesities of these beams are in V
proportional relationship. Therefore. the rear beam
is used for monitoring the front beam. Figure 9 j
! 20 /
~
shows the typical front beam output vs. monitor
d'
output current characteristic of ML64111 N. When
s
the front beam output is 30mW. the monitor ~
output typically becomes 0.9mA.

::J
0
.E0> 10 /
:::; /
0 /
o 0.2 0.4 0.6 0.8 1.0
Monitor output cuirent 1m (rnA)
2-125
ML6XX11 SERIES
I Polarization ratio vs. light output characteristic Fig. 10 polarization ratio "s. light output
The main polarization of ML6XXll is made in the NA=0.5
'ratio refers to the intensity ratio of the light ~ 2001--------r-------r-----~
polarized in parallel to the active layer to the, light ~

polarized in perpendicular to it. Figure 10 shows the ~
.g
standard polarization ratio vs.' total light output e
characteristic. The polarization ratio increases with .§ 1ool---------;}I>jC--------r-------j
the light output. ,~
.!lI
~
°0~-------1~0------~207-----~30
II Impedance characteristic Fig. 11 Impedance

Typical impedance characteristic of ML6XX11, with
a lead length of 2mm and the bias current being
used as the parameter is show(l in Fig. 11. Test
frequencies are 100MHz to 1300 MHz in steps of
100MHz. Above the threshold, the impedance of
ML6XX10 is nearly equal toa series connection of
a resistance of 40hms and an inductance of 3nH.

• SIN vs. optical feedba'ck ratio characteristic
f = 20kHz. BW = 300Hz
S / NA vs. optical feedback rat,io, where the 40~------,-----~r-----~
frequency is 20kHz and the bandwidth is 300Hz is

shown in Fig. 12. That where the frequency is 10 50
MHz and the bandwidth is 300kHz is shown in Fig.
13. S/N ratio is worst on CW driving and HF
superimposed driving, when case temperature is 25
"C to 50"C and ambient temperature is 25"C. The
frequency and input level of HF superimposition 80ri--~~~~_.~~----,__<r__
are the values obtained at about 700MHz and I

3mW CW
--0--
about 35mAp - p, res~ectively
90 ................... ~.; 30mW CW
.......
3mW HF
100 0 0.01 0.05 0.1 0.2 0.5 1 2 5 10
2-126
ML6XX11 SERIES

f = 1OMHz. BW ~ 300kHz
--0---
3mW CW
90~-------+-------+------~---o---
30mW CW
---.---
3mW HF
, 00 O~i'".0=,--'-7
0.-=0=-5-=0"-:.,~o-:-,=-2-=0""=.5:-':'-2':---:5:---" 0
• Astigmatic distance Fig. 14 Astigmatic distance

,,
'0 Po-3mW CW
in the parallel and perpendicular directions with the .
~ NA = 0.7
.....
I
E I
I
laser beam. This distance between the two points' ::t I

~
,
is the astigmatic focal distance. Therefore, when .r:. I
\
the laser beam is focused, there is a difference in 1 ~
. ,,,,-Parallel
direction
..
\ I
focal point in the directions, making it difficult to "!' I
{ 5
::::; .,' "
converge the beam spot to the diffraction limit.The
typical astigmatic focal distance at NA = 0.7 of !E . ..... •fL ".....
':ii- I •
~rpendicular
direction
ML6XX11 is shown in Fig. 14. The LD position
which minimizes the horizontal and vertical spot
...,
.Il!
15Q
en
-:~ I
-
Astigmatic
distance 2.8 JJ. m
diameters is obtained. The astigmatic distance is o
the difference in moved distances thus obtained. o '0 20 30
LD moving distance (JJ. m)
II Wave front distortion characteristic Fig. 15 Wave front distortion

Typical wave front distortion (mainly astigmatism) RMS : 0.023 P- v : 0,150
of ML6XX11 is shown in Fig. 15. This figure Po = 3mW.CW
NA = 0.25
shows wave front (phase front) when the laser
beam is collimated. Various aberrations are
calculated by Zernike's polynomial approximation
for the interference fringes observed by the Mach
- Zehnder interferometer.
- 0,015
--~~--+-~----~~~~ - 0,053
-1. 0 -0.5 0.0 0.5 1. 0
Parallel direction
'. MlTSUBlSHI
·ML6XX14 SERIES
TYPE
NAME ML60114R, ML64114R
ML6XX14 is a high - power AIGaAs semiconductor • Output 60mW (CW), 70mW (pulse)
mode oscillation with emission wavelength of • Built- in monitor photodiode
785nm and standard light output of 50mW. • MOW active layer
ML6XX 14 is produced by the MOCVD crystal
production and characteristics uniformity. This is a Optical disk drive (rewritable, write once)
high - performance, highly reliable. and long - life

CW 60
Pulse (Note 1) 70
Tc Case temperature - -40-+ 60 °C
T5'9 Storage temperature - - 55-+ 100 °C
Note 1: Duty less than 50 %. pulse width less than 1 /l s.

Limits
Min. Typ. Max.
Ith Threshold current CW - 55 - mA
lop Operating current CW.Po=50mW - 135 - mA
TI Slope efficiency CW, Po=50mW - 0.6 - mW/mA
Vop Operating voltage CW, Po = 50mW . - 2.0 2.5 V
AP Peak wavelength CW, Po-50mW 770 785 800 nm
8 II Beam divergence angle (parallel) CW, Po = 50mW - 9.5 - deg.
81. Beam drivergence angle (perpendicular) CW, Po = 50mW - 25 - deg.
1m Monitoring output current CW, Po = 50mW, VRD = 1V, RL = 10 Q - 0.3 - mA
1m (Note 2) (Photodiode) (Note 3) - 0.3 - mA
ID Dark current (Photodiode) VRD=10V - - 0.5 /lA
C, Capacitance (Photodiode) VRD = OV, f = 1MHz - 7 - pF
Note 2: Applicable to ML60114R.
" ,MITSUBISHI
2-128 "ELECTRIC
ML6XX14 SERIES
OUTLINE DRAWINGS
~ 9 ~ 8.03 Dimensions in mm
-;;
!:s (3)
fS
"
~ do Reference slot
1/
~as.II
8+lb~~~=/-
~ d PO LO
o
+1
o'" (2) (1)
Dimensions in mm
h"=;::f:T=!::L.;....- Reference plane
+1
o
,..:
3-0.4S¢
(I) (3)(2)
• MITSUBISHI
..... ELECTRIC 2-129
MITSUBISHI LASER DIODE
ML7XX1 SERIES
ML7011 R, M L720A 1S, ML7701

TYPE
NAME ML774A1 F, ML776B1 F, ML7781
ML7911
ML7XXl series are InGaAsP laser diodes which • Stable fundamental transverse mode oscillation
provide a stable. single transverse mode oscillation • Low threshold current. low operating current
with emission wavelength of 1300nm and standard • Built- in monitor photodiode (except ML7911)
continuous light output of 5mW. • High reliability. long operation life
ML7XXl are hermetically sealed devices having • 1300nm typical emission wavelength
the photodiode for optical output monitoring. This • High speed of response
high-performance. high reliability. and long-life laser
diode is suitable for such applications as the light APPLICATION
sources for long - distance optical communication • Optical communication systems
systems and optical mesurment systems. • Optical measurment systems

Symbol Parameter Conditions Ratings unit
CW 10
Po Light output· power mW
Pulse (Note 1) 10
Tc Case Temperarure - - 20-+ 70 ·C
Tstg Storage temperature - - 40-+ 100 -C
Note 1: Duty less than 50 %. pulse width less than 1 jJ. s

Limits
Min. Typ. Max.
!th Threshold current CW - 10 30 mA
lop Operating current CW.Po-5mW - 25 50 mA
n Slope efficiency CW. Po = 5mW 0.2 0.35 - mW/mA
td Spectral half width CW. Po = 5mW - 3 - nm
Oil 8eam divergence angle (parallel) CW.Po=5mW - 25 - deg.
01- Beam divergence angle (perpendicular) CW.Po=5mW - 30 - deg.
tr. tf Rise and fall times IF = !th. Po = 5mW. 10 %-90 % - 0.3 0.7 ns
Monitoring output current CWo Po = 5mW. VRD = 1V. RL = 10 Q
1m (Photodiode) (Note 2)
0.2 0.5 - mA
ID Dark current (Photodiode) VRD = 10V - 0.2 0.5 jJ.A

Ct Total capacitance (Photodiode) VRD = 1OV. f = 1MHz - 8 20 pF
Pm (Note 3) Monitoring Light Output CW.Po=5mW - 1.0 - mW
3 : Pm only apply to ML7911.
..•.. MITSUBISHI
2 -130 . . . . ELECTRIC
ML7XX1 SERIES
OUTPUT DARAWINGS
0.4+ 0.1 Dimensions
- 0 (> 2.0 (p.e.D.)
in mm (¢ 5.6mm 3pin
small package)
00
+1
-ffiz::::==l=d
A
(3)
aso
I; II
PO S LO
"l (2) (1)

",0
N +1
f.-,d:==;=i=r===;"";-~ Reference plane
-+1
C!
....
Dimensions in mm
(¢ 5.6mm 4pin
LD, PD floating)
(1) (2)
~
'1 II
LD "2. PD
• Case
(3) (4)
Reference plane
-+1
~
Dimensions in mm (¢ 9mm 4pin

Standard package)
j
2: d
:::l'"
+1
"l
0
4===;;'"'"",,,,=="11- ~
Reference slot
~
PD f'
(4)
(2)
I!
S
(3)
(1)
case
II
LD
+1;1 ~
Referonce[Er"----rr-----'-,
plane
~ U :!l
; ci
'" +l
- "1
• MITSUBISHI
. . . . ELECTRIC 2 - 131
ML7XX1 SERIES
¢ 5.6 ~ 8.03
Dimensions in mm (¢ 5.6mm 4pin
¢ 4.8 ± 0.3
with thick cap)
+¥"
I; II
0
0
ro RO.15MAX. PD S LD
8
- .~ ~~
d c & (1) (2)
Reference plane
+1
~ 4 - ¢ 0.45
, (3)
(1) (4) (2)
¢ 2.0
P.C.D
¢ 5.6~ 8.03 Dimensions in mm

(¢ 5.6mm 4pin
¢ 4.4
small package)
~o (4) (3)
+f"
c
·0
0. I; II
0
0
ro
0
~
0
PD S LD
8 H d
c
E
~
(2) (1)
Reference plane
+1
0
N
Dimensions in mm
• 9:t:g. 03
MAX .8.1
(¢ 9mm, 4pin,
.6.4+0. 2
-0.1
Low cap package)
.3
c
·0
0.
o
~
co .~ - Reference slot
.
oEo>
O..J°
~ .
+I~+I
t==-rc~i1l=-
Re.ference ~ -t---r~TT--".,N
:QT"r M
(2) (1)
4-.0.45
P. c. D. • 2.54
(1 )(3)(2)
(4)
•. MITSUBISHI
2-132 ..... ELECTRIC
ML7XX1 SERIES
Dimensions in mm (Chip carrier

package)
l±O.
-.--r-±--,-j~~--.
~ ~
'g NL-_"'~~~~¥_...L
""*
"'g
~
~ l±O.l
'e Ceramic 0(2)
(1).
.3
~ ~DChiP N
Case
~DE~ ,,' JI:l ~

I.t'l
•
II)
.....:
I
I
I I
I
r--
,....:
t::::J
- I. 3±O. 1.
(Luminous point)
i
• MITSUBISHI
. . . . ELECTRIC 2-133
ML7XX1 SERIES
characteristic are shown in Fig. 1. The threshold
5
§2.
temperature. Above the threshold. the light output ,5 4
increases linearly with current. and no kinks are 0
0..
observed in the curves. An optical power of about. '5 3
5mW is obtained at Ith + 15mA. e
"
0
As can be seen in Fig.1. Ith and slope efficiency .E 2
OJ
Y} (dPo/dIF)depends on case temperature. obtaining :.J
a constant output at varying temperatures requires

to control the case temperature Tc or the laser 0
current. (Control the case temperature or laser 0 50
current such that the output current of the bui It-

in monitor PO becomes constant.)
II Temperature dependence of threshold current Fig. 2 Temperature dependence of threshold current

(lth). operating current (lop) and slope efficiency ( Y} ) 100
70
50
current and operating current (5mW) is shown in
lo~(5niW)
~
~ 40
0:,5 30
!--r""
Fig. 2. The characteristic temperature To of the
threshold current is typically 55K in Tc;:;; 50·C. 45K -:.:E 20
~
! t:., .I Vr'"
in Tc > 50·C where the definition of To is Ith a;
~
B~ 10
Ith ~
j...-'"
exp (Tc/T0). OJ 0
7
.~ =§ 5 I.......
(p 1i
0. .,
4
01: 3
r-
2
1
-20-10 0 10 20 30 40 50 60 70 80
Case temperature Tc C'G)
A typical temperature dependences of the slope Fig. 3 Temperature dependence of slope efficiency
efficiency TJ is shown in Fig. 3. The gradient is 0.5
-
- O.0015mW/mA/·C.
~
E 0.4
"-?; r- r-
,5 r- r-
.,
(;
c:
0.3 ~
--
.lE
.11 0.2
~
.,
0.
0
u; 0.1
-20-100 10 20 30 40 50 60 70 80
.• MITSUBISHI
2-134 .... ELECTRIC
ML7XX1 SERIES

Typical forward current vs. voltage characteristics 50r-~-r-'--~'--T~r-~-r~
are shown in Fig. 4. In general, as the case T c=70JC~ l25"C

temperature rises, the forward voltage VF decreases 40~----------~--H--------1

typically at a rate of -1.3mV/oC and -lmV/C at 30~----------~-H~-------1
IF = 1mA and 10mA, respectively.

20~----------~~---------1
1
~
o
10~----------~~---------1
II Emission spectra
Tc=25'C
several modes are observed. Longitudinal mode
spacings are typically 1nm and spectral width
(FWHM) is typically 3nm at an output of 5mW.
The peak wavelength depends on the operating >
.t::
case temperature and the forward current (output "'t:
l!l
level). .5
.~
.§
£
1290 1300 1310
Wavelength A (nm)
A typical temperature dependence of the peak Fig. 6 Temperature dependence of peak wavelength
wavelength at an output of 5mW is shown in Fig. 6. 1315
Po=5mW
shifts to the long - wavelength side at a rate of ~ 1310 ./
about O.35nm!'C.
E
..5
0..
/
v'"
'"" 1305
.r:;
a,
/
/
..i 1300
i // "
1 1295
V
1290
010 203040506070
.. ' MITSUBISHI
. . . . ELECTRIC 2-135
ML7XX1 SERIES

II Far-field pattern in plane parallel to heterojunctions ell
The ML7XXl laser diodes lase in fundamental 1. O...-...--,.........,..--,r--..-.....--.---.-,.........,
change withthe current. They have a typical emitting
area (size of near- field pattern) of 1.0 x 1.25 /J. rn'.
'5
Fig. 7 and Fig. 8 show typical far- field radiation 5o
patterns in "parallel" and "perpendicular" planes.
.E
are typically 25deg. and 30deg., respectively.
i
+50
Off- axis angle (deg)

in plane perpendicular to heterojunctions e.L
1. Or--r---,---,-.,..--r----r-r---r---,---,
0
0..
'5Q
'5
0
~
.<:: 0.5
g
.
.~
j
I Pulse response Fig. 9 Pulse response waveform

In digital transmission systems, the response
waveform and speed of the light output against
the input pulse current waveform is a main
concern. In order to shorten the oscillation delay '5
time, the laser diode is usually biased close to the ~
:::>
o
threshold current. Fig. 9 shows a typical response
waveform when a rectangular pulse current (rise/
fall time is shorter than 0.2ns) is applied.
Rise/fall time is typically 0.3ns at Ib = Ith and Po =
5mw.
500ps/div
Time
2-136
ML7XX1 SERIES
I Monitoring output Fig. 10 Light output

6
VS. monitoring output current
5
/
beam can be used for monitoring the power of the
front beam since the power of the rear beam is i
,5
4 /
proportional to the front one. In the ML7XX1 series.
the rear beam power is changed into photocurrents .e 3
/
by monitor photodiodes. Fig. 10 shows typical light
S0-
S0
2 /
Above the threshold current. the monitoring
photocurrent increases linearly with the front light
1:
.2'
..J ,/
output. The monitoring output current is typically o
/
O.SmA when the front light output is SmW. In the o 0.5 1.0
(0) (1) (2)
ML7911. monitor photodiodes are not installed in
the laser package. Monitoring output is emitted (Monitoring light output Pm (mW»
from the back of package.
Monitoring output is typically 1mW when front
light output is SmW.
Ilmpendance characteristics Fig. 11 Impedance characteristics

Typical impendance characteristics of the ML7XX 1. "
with lead lengths of 2mm is shown in Fig. 11 with
the bias currents as the parameter. Test frequency
is swept from 100MHz to . 1300MHz with 100MHz
step.
2-137
MITSUBISHI LASER DIODI:S
ML7XX1ASERIES
FOR OPTICAL COMMUNICAtiON
TYPE
NAME ML7781A, ML7911A
ML7XX1 A series are InGaAsP high power laser • Low threshold current. low operating current
diodes which provide a stable. single transverse • Built- in photodiode (ML7781 A)
mode oscillation with emission wavelength of • High reliability. long operation life
1310nm and standard continuous light output of • High power (CW 25mW. Pulse 100mW)
25mW. • 131 Onm typical emission wavelength
ML7XX1 A are hermetically sealed devices having • High speed of response
the photodiode for optical output monitoring. This • Stable fundamental transverse mode oscillation
diode is suitable for such high-power applications APPLICATION
as the light sources for OTDR systems and long - Digital communication systems. OTDR systems
distance optical communication systems.

IF Forward current Pulse (Note 1) 400 mA
Tc Case temperature - -20-+ 50 ·C
Tstg Stroage temperature - - 40-+ 100 ·C
Note 1: Duty less than 1 %. pulse width less than 1 JJ. S.
ELECTRICAL/OPTICAL CHARACTERISTIC (Tc = 25 ·C)
Limits
Min. Typ. Max.
lop Operating current CW.Po-25mW - 70 130 mA
Po (P) Pulse ligth output Pulse (Note 1). IF = 3S0mA 100 - - mW
LlA Spectral half width CW.Po-25mW - 8 - nm
81/ Beam divergence angle (parallel) CWo Po-25mW - 25 - deg.
8J. Beam divergence angle (perpendicular) CWo Po=25mW - 30 - deg.
tr. tf Rise and fall times IF -Ith. Po - 25mW. 10 %-90 % - 0.3 - ns
1m
(Photodiode) (Note 2)
0.2 0.5 - mA
ID Dark current (Photodiode) VRD -10V - 0.2 0.5 JJ.A

Ct Capacitance (Photodiode) VRD - 1OV. f = 1 MHz - 8 20 pF
Pm (Note
3) Monitoring light output CWo Po-25mW - 1.0 - mW
3 : Pm only apply to ML7911 A.
• MIlSUBISHI
2-138 .... ELECTRIC
ML7XX1A SERIES
OUTLINE DRAWINGS
Dimensions in mm (¢ 9mm, 4pin,

,. 9~~. 03
Low cap package)
MAX"8.1
"6.4+0.2
-0.1
¢3
'0'
~
<0
~
8 ... ,b;i~~/
~ d
c
.~
,o
.~ - Reference slot
00
oEM
~d1l
PO +
(4)
1/
S
+(3) Case
II
LO
t===-I!~iilt=- ~ r:~ r (2) (I)
+_,_.<----r-r----'''"-, N M
, 4-" O. 45
P. C. D. "2.54
(I )(3)(2)
(4)

package)
6±0.2
I±O.I
<0
.&c t1 .L_I,L!.,LJ~IlIt:l~¥--.i
,o Case ~
.~ 1'1±O.1 (I) ••-ttwW-o (2)
E Ceramic
d L~ChiP N
~T~r=~-@f ~
u> 1:L~.--2t 6
..:..: 1.'3±'O.I.i .:
(Luminous point)
• MITSUBISHI
. . . . ELECTRIC 2 -139
ML7XX1A SERIES
I Light output VS. forward current Fig. 1 Light output vs. forward current (CW)
Typical light output vs. forward current 30~----------~~~~~--,

observed in the curves. An optical power of about ~
25mW is obtained at Ith + 60mA. S"

o"
As can be seen in Fig. 1. Ith and slope efficiency E 10~----~~~~----------~
.2'
TJ (dPo/dIF) depends on case temperature, obtaining ...J
a constant output at varying temperatures requires

to control the case temperatureTc or the laser
°0~~~------~~--------~1~00
current. (Control the case temperature or laser
current such that the output current of the built-
Fig. 2 Pulse light output vs.

Fig. 2 shows a typical light output vS.forward forward current at pulse operation
current under pulse operation. 3 100
Pulse conditions are pulse width tp = 1 f.l sec and -5
duty = 1 %.They emit light power of 100mW up to
75~----+-----~~~-+-----;
50°C case temperature.
50~----~~~+-----+-----1
25~--~+-----~-----+-----;
'"
Ol
:.J 200 300 400
100
Pulse forward current IF (mA)
Fig. 3 Temperature dependence

II Temperature dependence of ith, lop of threshold and operating currents
Typical temperature dependence of the threshold 1 n
100
70 I I 1
and operating currents is shown in Fig. 3. The .£ t""" _I I,
50 lop(25mW)
characteristic temperature To of the threshold 40
30 I
current is typically 55K for Tc;;; 50°C, where the
20
,. ,. ~I
definition of To is Ith eTc/To). I
Ith
10
7
5
c:
4
3
~
"
to
'C
2
'0
'" 1
~ -20-10 0 10 20 30 40 50 60 70 80
'"
I-
Case temperature ("C)
'. MITSUBISHI
ML7XX1A SERIES

are shown in Fig.4. In general, as the case TC =7)C- l 2 5 C 0

slightly against the constant current IF. VF varies <
,5
typically at a rate of - 1.3mV/oC and - 1mW/OC 30
.!:
at IF = 1mA and 10mA, respectively. E
i!!
:; 20
"
"0
~0 10 I
~~
u.
o
o 1.0 2.0

Typical emission spectra under CW opertaion are
25"C
'<ii
.t::
spacings are typically 1nm and spectral width c:
:::>
(FWHM) is typically 8nm at an output of 25mW. .e
~
The peak wavelength depends on the operating
case temperature and the forward current (output
,i
c: 25mW
level). .~ 15mW
]
"
.2:
5mW
cr:" X12.6 Ith
1300 1310 1320
Wavelength ). (nm)
II Temperature dependence of peak wavelength Fig. 6 Temperature dependence of peak wavelength

1325
A typical temperature dependence of the peak
Po !" 25 mlw
wavelength at an output of 25mW is shown in Fig. 6
As the temperature rises, the peak wavelength ~ 1320
E
shifts to the long - wavelength side at a rate of
about O.35nm/oC.
-5
"-
'"" 1315
/
J::
t;,
c:
~ 1310 /
V
~ V
~ 1305
V
"-
1300
V
-20 -10 0 10 20 30 40 50
.• MITSUBISHI
. . . . ELECTRIC 2 - 141
ML7XX1A SERIES

I Far - field pattern in plane parallel to heterojunctions 8 II
The ML7XXI A laser diodes lase in fundamental 1.0
0
emitting area (size of near- field pattern) of 1.0 x Q.
~
:;J
1.25 f.l rna. Fig. 7 and 8 show the typical far- field Co
'5
0
patterns. ~ 0.5
.<::
]
">
"
a::
o +50
Off - axis angle (deg)
Fig. 8 Far - field patterns

in plane perpendicular to heterojunctions 8.L
1. 0..------..,..,-------.
0
Q.
'5
S:;J
0
0.5
.E
g
".,.!!1">
£
I Monitoring output
beam can be used for monitoring the power of the
front beam since the power of the rear beam is Fig. 9 Light output vs. monitoring output current
proportional to the front one. In the ML7XXIA 30
series, the rear beam power is changed into
photocurrents by monitor photodiodes. Fig. 9 shows 25
I
typical light output vs. monitoring photocurrent
~ 20 /
characteristics. Above the threshold current, the
monitoring photocurrent increases linearly with the
,5
0
Q. 15
/
front light output. The monitoring output current
is typically O.5mA when the front light output is
'5
S:;J
0
10 /
25mW. In the ML7911 A, monitor photodiodes is not
installed in the laser package. Monitoring output is
.E
'"
:.J 5 /
emitted from the back of package. Monitoring V
o 0.5 1. 0
output is typically 1mW when the front light
(0) (1) (2)
output is 25mW.
(Monitoring light output Pm (mW))
• MITSUBISHI
2-142 . . . . ELECTRIC
ML7XX2 SERIES
TYPE
NAME ML774A2F, ML7922
ML7XX2 is a DFB (Distributed Feedback) laser diode • Low threshold current typical 15mA
which oscillates in a single wavelength with .High stable fundamental transverse mode oscillation
emission wavelength of 1310nm and standard • High side mode suppression ratio typical 40dB
continuos light output of 5mW. (Tc = 0-+ 60"C)
ML7XX2 are hermetically sealed devices having • High speed of response (Rise and fall time
the photodiode for optical output monitoring. This typically 0.2nsec)
is a high-performance. high reliability. and long-life
laser' diode. APPLICATION
Long-distance. large-capacity optical communication
systems

VRL Reverse voltage (Laserdiode) - 2 V
Tc Case temperature - 0-+60 'c
Tot9 Storage temperature - -40-+ 100 'C

Limits
Min. Typ. Max.
Vop Operating voltage (Laser diode) CW.Po-5mW - 1.2 1.8 V
T) Slope efficiency CW.Po=5mW - 0.4 - mW/mA
.l. P Peak wavelength CW.Po=5mW - 1310 - nm
8 II Beam divergence angle (parallel) CW.Po-5mW - 25 - deg.
8J. Beam divergence angle(perpendicular) CW.Po=5mW - 30 - deg.
1m
(Photodiode) (Note 1) 0.1 0.25 - mA
tr / tl Rise and fall times IF -Ith. Po - 5mW. 10 %-90 % - 0.2 0.4 ns
SMSR Side mode suppression ratio CWo Po = 5mW. 0- + 60 'c 30 40 - /l.A
Pm(Note 1) Monitoring Light Output CW.Po=5mW - 0.5 - mW
• MITSUBISHI
"ELECTRIC 2 -143
ML7XX2 SERIES
FOR OPTICAL COMMUNICATION .
OUTLINE DRWINGS
Dimensions in mm (¢ 5.6mm 4pin

with thick cap)
PD + (4) +(3)' Case

1/ . II
S LD
(I) (2)

type package)
" 6±0.2 -Jl
-,---r0.l ±
I
:C~=n
(2~¢1±O.1 Case
(I).
~
IW7 0(2)
LD chip I ~
:,~t2,5iu·~~~'
, " -:;r¥,I
I r~---
Lf--..2--,-+.w-", . E
~'-'-d
Ceramic (Luminous point)
• MITSUBISHI
2-144 "'ELECTRIC
ML7XX2 SERIES
Typical light output forward current characteristics 6~----~-r-r~--~~~-'
are shown in Fig. 1. The threshold current for

4r-----~~--~7------r-;
linearly with current, and no kinks are observed in ~
the curves. An optical power of about 5mW is SQ 3~----~4---~+-------~
obtained at Ith + 13mA. S
o
As can be seen in Fig. 1. Ith and slope efficiency 1: 2r---~~---+~-------r-;
.2'
11 ' (dPo / dlF) depends on case temperature, ...J
obtaining a constant output at varying temperatures

O~~~~----J-----~~
laser current. (Control the case temperature or laser o 40 60
current such that the output of the built - in
monitor PO becomes constant.)

I Temperature dependence of threshold current (Ith), of threshold current and operating current
100
operating current (lop) and slope efficiency. ( 11 )
A typical temperature dependence of the threshold 1 70 I I
Q
.2
50
40 lop(5mW)
_i"""
.-
- r--
-
Fig. 2. The characateristic temperature To of the 30
20 Ith
V
threshold current is typically 60K in Tc:;o 40"C, 55K f.....-
in Tc > 40 "C. 10
7
- I-
5
4
3
2
1
-20-10 0 10 20 30 40 50 60 70 80
'Case temperature Tc ('C)
efficiency 11 is shown in Fig. 3. The gradient is 0.5
- O.0012mW/mA/"C.
~
~
0.4
0.3
- ---
r-
~
.!I! 0.2
~,
£& 0.1
o
-20 -10 0 10 20 30 40 50 60 70 80
" 'MITSlI3ISH,I
"ELECTRIC 2-145
ML7XX2 .SERIES

are sho,wn in Fig. 4. In general, as the case TC=50~_ l.- 25'C
temperature rises, the forward voltage VF decrease :( 40
slightly at a constant current IF. VF varies typically ,§
.!!.
at a rate of - 1.2mV/C and - 1.1 mV/"C at IF = 30
1mA and 10mA, respectively. ~
:J
U
20
'E
...~
0
10 ~
)
1.0 2.0
Forward voltage VF M
Fig. 5 Emission spectra under CW operation .
I Optical output dependence of emission spectra

Tc=25"C

shown in Fig. 5.
J
p o =5mW-
./ t'-
~
J, p o =3mW_
~ ........
) \ Po=lmW _
.-./
A
Emission spectra under 2.5Gb/s (NRZ) modulation IF=lth-
A 1\ It\
is shown in Fig.6. "
Typical spectral width (Chirping) is about O.15nm 1305 1310 1315
at - 3dB. 0.45nm at - 10dB and O.60nm at - 20dB. Wavelength .l (nm)
Fig. 6 Emission specturm under modulated operation

Tc=25"C
2.5Gb/s NRZ-
Ppeak=5mW
! Ib=lth-
J
I
J,,"
:- ----
1305 1310 1315
Wavelength A (nm)
2-146
ML7XX2 SERIES
\
1315
wavelength at an output of 5mW is shown in Fig. 7.
shifts to the iong - wavelength side at a rate of ~ 1310
E
about 0.1 nm/"C. .5
Q.
... 1305
~
i' "
.¥
1. 1295
~
V
...... ~
1290
-20-100 10 203040 5060
II Far-field pattern Fig. 8 Far field pattern (parallel)

The ML7XX2 laser diodes lase in fundamental 1.0
transverse (TEoo) mode and the mode does not change
with the current. They have a typical emitting area
(size of near- field pattern) of 1.0 x 1;25 /.t rn'. s
Fig. 8 and 9 show the typical far-field patterns. ~
The full angles at half maximum points (FAHM) .t: 0.51------+-+----'1-----1
~
are typically 3Odeg. and 35deg., respectively.
o +45
Angie (deg.)
Fig. 9 Far field pattern (perpendicular)
Angle (deg.)
2-147
ML7XX2 SERIES

, In digital optical transmission systems. the response
waveform and speed of the light output against
the input pulse current waveform is a main concern.
~ 90 ~-+-I-+J-I---±-I--+-I--t--;
In order to, shorten the oscillation delay time. the
t \
current. Fig. 10 shows a typical response waveform .E
~
I \
when a rectangular pulse current (rise/fa" time is ,~I \
shorter than 0.1 ns) is applied. j I' \
Rise/fa" times is typically 0.2ns at Ib =ith and Po 10 ---------,-----
=5mW. O%r--t~t__+--+_~~~--I__r~~~
200ps/div
I Monitoring output Fig. 11 Light output vs. monitoring output current

mirror surfaces. front and rear surfaces (see the

5
/
outline drawing). The rear beam can be used for
monitoring the power of the front beam since the ~
.5 4
'/
power of the rear beam is proportional to the front
one. In the ML7XX2 'series, the rear beam power is
.e
'5
e-
3 /
changed into photocurrents by monitor photo diodes.
Fig. 11 shows typical light output vs. monitoring E
::J
0
2 /
photocurrent characteristics. Above the threshold
current, the monitoring photocurrent increases
:3'
L
linearly with the front light output. The monitoring
output current is typically 0.25mA when the front
o
o
V 0.25 0.5
light output is 5mW.
~ ~~ um
In the ML7922, monitor photodiodes are not (Monitoring light output Pm (mW))
emitted from the back of package. Monitoring
output is typically 0.5mW when the front light
output is 5mW.
2-148
ML7XX3 SERIES
TYPE
NAME I ML7783F
ML7XX3 series are InGaAsPHigh Power laser • High Power (CE 30mW. Pulse 200mW)
diodes which provide a stabe. single transverse .1310mm typical emission wavelength
mode oscillation with emission wavelength of • High speed of response
1310nm and standard continuous light output of • Stable fundamental transverse mode oscillation
25mW. • Low threshold current. low operating current
ML7XX3 are hermetically sealed devices having • Built- in monitor photodiode
the photodiode for optical output monitoring. This • High reliability. long operation life
diode is suitable for such high - power applications APPLICATION
as the light sources for OTDR systems and log- OTDR systems. optical communication systems

Tc Case temperature - + 20-+ 30 'c
Note 1: Duty less than 1 %. pulse width less than 1 J1, s.
Limits
Min. Typ. Max.
Vo~ Operating voltage CWo Po = 25mW - 1.5 2.0 V
Po (P) Pulse light output Pulse. IF = 800mA (Note 2) 200 - - mW
td Spectral half width CW.Po=25mW - 8 - nm
8 II Beam divergence angle (paralieD CW. Po= 25mW - 25 - deg.
8J. Beam divergence angie (perpendicular) CW. Po = 25mW - 30 - deg.
tr. tf Rise and fall times IF = Ith. Po = 25mW. 10 %-90 % - 0.3 - ns
Monitoring output current CWo Po = 25mW. VRD = lV. RL = 10 Q
1m (Photodiode) (Note 3) 9·1 0.2 - rnA
ID Dark current (Photodiode) VRD = 10V - 0.2 0.5 J1,A

Ct Capacitance (Photodiode) VRD = 10V. f = 1 MHz - 8 20 pF
Note 2 : Duty cycle less than 1 %. pulse WIdth less than 1 J1, s
3 : RL is load resistance of photodiode.
• MITSUBISHI
. . . . ELECTRIC 2 -149
ML7XX3 SERIES
.FOR OPTICAL COMMUNICATION SYSTEMS
OUTLINE DRAWINGS
Dimensions in mm (<I> 9mm 4pin '

Low cap package)
'0
<:
'&
.,
~
co g- Reference slot
~.~~
tlotl
t-~~It=~J~I
-t--r-"---r.---'" N M
tl , 4-~O.45
'" P. C. D. ~ 2. 54
(1 )(3)(2)
(4)
• MITSUBISH.I
2-150 "-ELECTRIC
MITSUBISHII,.ASER DIODES
ML7XX3 SERIES
I Light output vs. fo~ard current characteristic Fig. 1 Light output VS. forward current (cw)
Fig. 1 shows the typical light output vs. forward 30
current characteristic of ML7XX3. The threshold
current Ith at room temperature is about20mA.
Tc=25'C
/
! 20
/
the curves. An optical output of 25mW can be
~
SQ.
V
/
g
E 10
/
~
/
o
o
/ 50 100
Fig. 2 shows the typical light output vs. forward Fig. 2 Pulse light output vs. forward current (Pulse)
current characteristic of ML7XX3 under pulse 250
operation. Pulse conditions are pulse width tp = 1
Tc= 25'C
/'
p, sec and duty = 1 %. More than 200mW is ~ 200
/
obtained at IF = 800mA.
~
/
& 150 /
g
E 100
g
/
/ tp = 1 ~ s
Duty = 1 %
o
o
/ 200 400 600 800
Pulse forward current IF ,(mA)
• MlTSUBlSHI
~ELECTRIC 2-151
ML7XX5 SERIES
TYPE
NAME ML7925
ML7XX5 series areDFB (Distributed Feedback) laser • Excellent distortion characteristic
diodes emitting light beam around 1310nm. 42- channel transmission test
They are well sujted for light source in long- CSO (composite second order) typical - 65dBc
distance analog transmission system for example CTB (composite triple beat) typical - 70dBc
cable television (CATV).The ML7925 are specially • Low relative intensity noise characteristic (typical
designed for in fiber modules and mount on flat - 155dB/Hz)
open packages. • Low threshold current (typical 15mA)
Rear output can be used for automatic control of • High- side mode suppression ratio (typical 40dB)
the operating current or case temperature of the • High speed of response (typical O.2ns)
laser.
APPLICATION
Long - distance analog transmission systems

Tc Case temperature - + 20-+ 30 "C

Limits
Min. Typ. Max.
TJ Slope efficiency CWo Po = 10mW - 0.4 - mW/mA
.l. P Peak wavelength CWo Po = 10mW - 1310 - nm
e/l Beam divergence angle (parallel) CWo Po -10mW - 25 - deg.
8.L Beam divergence angie (perpendicular) CWo Po= 10mW - 30 - deg.
tr. tl Rise and fall times IF = Ith. Po = 10mW. 10-90% - 0.2 0.4 ns
SMSR Side mode suppression ratio CWo Po = 10mW 30 40 - dB
Pm Monitoring output CWo Po -10mW - 1 - mW
CSO Composite second order 42- channel transmission test - -65 - dBc
modulation depth 11 M = 0.035.
CTB Composite triple beat average light output Po = 10mW to 20mW - -70 - dBc
CWo Po = 10mW to 20mW.
RIN Relative intensity noise
measuring frequency fm = 550MHz.
'- -155 - dB/Hz
ML7XX5 SERIES
OUTLINE DRAWINGS
type package)
~
(1). ~ 0(2)
LD chip Case
.• MlTSUBlSHI
. . . . ELEC1RIC 2-.153
ML8XX1 SERIES
TYPE
NAME ML8701, ML874A1F
provide a stable, single transverse mode oscillation • Low threshold current, low operating current
with emission wavelength of 1200nm and standard • Built- in photodiode
continuous light output of 5mW. • High reliability, long operation life
ML8XXl are hermetically sealed devices having • 1200nm typical emission wavelength
high-performance, high reliability, and long-life laser
source for multiple wavelength optical communication Digital communication systems, multiple wavelength
systems. communication systems

CW 6
Pulse (Note 1) 10
Tc Case temperature' - -20~+ 70 'c
Note 1: Duty less than 50 %. pulse width less than 1 /l s.
Limits
Min. Typ. Max.
!th Threshold current CW - 15 30 mA,
lop Operating current CW.Pb=5mW - 30 60 rnA
n Slope efficiency CW.Po-5mW 0.2 0.35 - mW/mA
.l. P Peak wavelength CWo Po=5mW 1180 1200 1230 nm
ld Spectral half width CWo Po=5mW - 3 - nm
ell Beam divergence angle (parallel) CWo Po=5mW - 25 - deg.
el. Beam divergence angle (perpendicular) CWo Po=5mW - 30 - deg.
tr. tf Rise and fall times IF = !th. Po = 5mW. 10 %-90 % - 0.3 0.7 ns
Monitoring output current CWo Po = 5mW. VRD = 1V.RL = 10 Q
1m (Photodiode) (Note 2) 0.2 0.5 - mA
ID Dark current (Photodiode) VRD = 10V - 0.2 0.5 /lA
Ct Capacitance, (Photodiode) VRD = 1OV. f = 1 MHz - 8 20 pF
" MITSUBISHI
2-154 "ELECTRIC
ML8XX1 SERIES
OUTPUT DRAWINGS
Dimensions in mm
(¢ 9mm 4pin
Standard package)
+f
o
~~ (4) (3)
Boo case
~+I
8d 0~ ==.n.......- iI II
+1 PD S LD
Reference slot
'"d
(2) (1)
Dimensions in mm
(¢ 5.6mm 4pin
with thick cap)
~
8 f~·
1
¢ 2.7
..-----.
I
RO.15MAX .
PO +(4)
/1
S
+(3)Case
II
LO
'E ~.£ (1) (2)

I ., => a a
.,; dec.
t-~.nee plane
I; I I ;I~
~
•
o
1
' "l'
N
4 - ¢ 0.45
, (3)
(1 ) (4) (2)
~
P.c.O
• MITSUBISHI
"'ELECTRIC 2-155
ML8XX1 SERIES
I LIght output vs. forward current Fig. 1 Light output vs. forward current
Typical I.ight output vs. forward current 6r----n~'"--~r----r---,
temperature. Above the threshold, the light output ~
-5 4
increases linearly with current, and no kinks are 0
0..
observed in ~he curves. An optical power of about :;
0. 3
5mW is obtained at Ith + 15mA. :;
0
As can be seen in Fig.1 Ith and slope efficiency E 2
.!1'
TJ (dPo / dlF) depends on case temperature, -'
obtaining a constant output at varying
temperatures requires to control the case
temperature Tc or the laser current. (Control the 80 100
constant.)
Fa Temperature dependence of threshold current (lth), of threshold current and operating current
operating current (lop) and slope efficiency ( TJ ) <' 100
A typical temperature dependence of the threshold -5 70 I
current and operating current is shown in Fig. 2.
0.
.2 50 IL
./
40 lop(5["W~
The characteristic temperature To of the threshold V-
current is typically 45K in Tc;:;;40·C, 35K in. Tc>40·C,
30
20 I-- n ./'
where the definition of To is Ith 0: exp (Tc/To).

10 V H:
7
5
4
3
2
1
-20 -10 0 10 20 30 40 50 60 70 80
efficiency 7} is shown in Fig. 3. The gradient is o. 5
- O.003mW/mA/·C.
<'E 0.4
~ r-.....
.........
-5 3 r---....
" "-
1
"
o
-20 10 0 10 20 30 40 50 60 70 80
• MITSUBISHI
2 -156 . . . . ELECTRIC
MITSUBISHI LA51:FI DIUUt:.~
ML8XX1 SERIES
I Forward currentva: voltage Fig. 4 Forward current vs. voltage

Typical forward current vs. vol,tage characteristics 50
are shown in Fig. 4. In general, as the case U
slightly against the constant current IF. VF varies .s Tc=70'C~ V 25 'C
~
typically at a rate of - lo3mV/"C and - 1mV/"C 30
1::
at IF = 1mA and 10mA, respectively. ~
il
"E 20
~
0
u-
10
..J 1.0 2.0

shown in Fig. S. In general, at an output of SmW,
(FWHM) is typically 3nm at an output of SmW.
..
>
.t:
C
l!!
level). ,5
j
Wavelength A (nm)
wavelength at an output of SmW is shown in Fig. 6. 1215
Po=5mW
/
shifts to the long - wavelength side at a rate of E 1210
L
about O.37nm/"C. -5
Q
"" 1205
/
.<:
j /
V
~ 1200
V
~
""~ 1195
V
V
1190 0 10 20 30 40 50 60 70
. ." . . MlTSUBlSHI
ELECTRIC 2-157
ML8XX1 SERIES

II Far-field pattern in plane parallel to heterojunctions (J /I
The ML8XX1 laser diodes lase in fundamental 1. or---r-'"T""...,...~--'---"'--r-'"T"""""'''''

0
emitting area (size of near-field pattern) of 1.0 x 0..
~
1.25 f.J. mo. Fig.7 and 8 show the typical far- field
S"
0
patterns. The full angles at half maximum points
.E 0.5
(FAHM) are typically 25deg. and 30deg., respectively. ~
.~
.!i
~
~50 +50

in plane perpendicular to heterojunctions (J 1.
1.0r-~-r~~~.-~...,...~--~
0':
sc.
S0
~
0.5
""g
.,
j
OIf- axis angie (deg.)

In digital optical transmission systems, the response
i Ib=lth
waveform and speed of the light output against 100r--t---:;;;+;;;;7't-"""~~v--r--Po=5mW
the input pulse current waveform is a main 90 --- -p'":':- ---
concern. In order to shorten the oscillation delay
s
~
time, the laser diode is usually biased close to the o"
threshold current. Fig.9 shows a typical response

fall time is shorter than 0.2ns) is applied.
Rise/fall time is typically 0.3ns at Ib = Ith and Po
1
10 ~ -- ------ --- -----\;ti'-
=5mW. O%~'r-+--+-i--i~~~~~--~~
500ps/div
2-158
ML8XX1 SERIES
I Monitoring output Fig. 10 Light output vs. monitoring output current

v
6
beam can be used for monitoring power of the 5
front beam since the power of the rear is ~

.5 4
/
proportional to the front one. In the ML8XXl
series. the rear beam power is changed into
0
0..
S0. 3
/
photocurrents by monitor photodiodes. Fig. 10
shows typical light output vs. monitoring
S
0
2 /
/
~
.s::;
photocurrent characteristics. Above the threshold ~
current. the monitoring photocurrent increases
linearly with the front light output. The monitoring
o 1/
output current is typically O.5mA when the front o 0.5 1.0
light output is 5mW.
'MITSUBISHI
"ELECTRIC 2-159
ML9XX1 SERIES
TYPE
NAME ML9701, ML974A1F, ML9911
provide a stable. single transverse mode oscillation • Low threshold current. low operating current
with emission wavelength of 1550nm and standard • Built- in photodiode (ML9701. ML974A 1F)
continuous light output of 5mW. • High reliability. long operation life
ML9XXl are hermetically sealed devices having .1550nm typical emission wavelength
the photodiode for optical output monitoring, This • High speed of response
source for long - distance optical communication Long - distance communication systems
systems.

CW 6
Pulse (Note 1) 10
Tc Case Temperature - - 20-+ 60 °C
T.tg Storage temperature - - 40-+ 100 °C
Note 1: Duty less than 50 %. pulse width less than 1 /1 s.
Limits
Symbol Parameter Test Conditions Unit
Min.- Typ. Max.
lop Operating currrent CW, Po=5mW - 40 60 mA
VoP Operating voltage CWo Po-5mW - 1.3 1.7 V
T/ Slope efficiency CW,Po=5mW - 0.2 - mW/mA
.l. P Peak wavelength CW,Po = 5mW 1520 1550 1580 nm
cd Spectral half width CW,Po -5mW - 5 - nm
8 II Beam divergence angle (parallel) CWo Po=5mW - 30 - deg.
81. Beam divergence angle (perpendicular) CWo Po= 5mW - 35 - deg.
tr, tf Rise and fall times IF -Ith, Po = 5mW. 10 %-90 % - 0.3 0.7 ns
'1m Monitoring output current CWo Po = 5mW, VRD = lV. RL= 10 Q (Note 2) 0.2 0.5 - mA
ID Dark current (Photodiode) VRD = 10V - 0.2 0.5 /1A
Ct Capacitance (Photodiode) VRD = 10V. f = 1MHz - 8 20 pF
Pm (Note 3) Monitoring light output CW.Po-5mW - 1.0 - mW
" ' MITSUBISHI

2 -160 "'ELECTRIC
MITSUBISHI,LASER DIODES
ML9XX1 SERIES
OUTLINE DRAWINGS
~-..: Dimensions in mm (cf> 9m m 4pi n

':~!~;~tl1'1til~ Standard package)
Reference slot
<Xl
t====,e:t;.~-=, ~;-T ~
Refe~~~~:-=- +-__ ...'---,-,,----"-, ~ "'U"'r--i
ti
"' , , ' 4- ¢ 0.45
P.C. D. ¢2.54
(1)(3)(2)
(4)
'"
'" 5,6 ~ 8.03
~ ;"::: \. ,'"
Dimensions in mm (cf> 5.6mm 4pin
:\/riL974A,iY 1114.8 ± 0.3
with thick cap)
PD f'(4)
(1)
//11
S
(3)
(2)
case
LD
, (3)1,,*,~4_-..:..III_O._45
"'-----:-:(1) (4) (2)
'" 2.0
P.C.D

package)
(1).
Case
"\--
* 0 (2)
~
6
·MlTSUBlSHI
ML9XX1 SERIES
I Light output vs. forward current Fig. 1 Light output vS. forward current
Typical light output vs. forward current characteristics 6r---'-~rr~r-r7--'----'
are shown in Fig. 1. The threshold current for

Above. the threshold, the light output increases
linearly ,with current, and no kinks are observed in
I
~
4
the curves. An optical power of about 5mW is SCo 3

obtained at Ith + 25mA. S0
As can be seen in Fig. 1. Ith and slope efficiency .E 2
.2'
T/ (dPo / dlF) depends on case temperature, ...J

laser current. (Control the case temperature or laser
Fig. 2 Temperature dependence of threshold

II Temperature dependence of threshold current (lth). <
current and operating current
operating current (lop) and slope efficiency ( T/ ) .5 100
I I
-
A typical temperature dependence of the threshold 0. 70
.l2
50 lop(5:nW\ ~
current and operating current (5mW) is shown in 40
.........r
--
Fig. 2. The characteristic temperature To. of the 30
20 .1 ". .......
threshold current is typically 65k in Tc => 40"C, 50k I~ .......
in Tc > 40 "C.
10
7
5
4
3
2
. 1
-20-100 10 2030 40 50 60 70 80
efficiency 11 is shown in Fig. 3. The gradient is 0.5
- 0.0015mW/mA/"C typo
< 0.4
i 0.3
I 0.2
.......
r--. r-....
r-
~
£ O. 1
o
-20-10 0 10 20 30 40 50 60 70 80
. • MlTSUBlSHI
2-162 ;""B.ECTRIC
ML9XX1 SERIES

Typical forward current vS.voltage characteristics 50
are shown in Fig. 4. In general, as the case Tc=60"C- --",'f,-25"C
:(
slightly against the constant current IF. VF varies ,§
typically at a rate of - 1mV /"C at IF = 1mA and .;!,
30
E
lOmA. !
:;
u
..
'E
~
20
0
u..
10
I
o
o
/ 1.0 2.0
II Emission Spectra Fig. 5 Emission spectra under CW operation

Tc = 25'C
(FWHM) is typically 5nm at an output of 5mW.
The peak wavelength depends on the operating >
.~
~
level). .5
.~
~
1535 1550 1565
Wavelength ), (nm)
P o =5mW
V
/
.5
about O.35nm/oC.
0.
""' 1555
V
""c;,c: /
~
.,;:~ 1550
/
""~ 1545 /
/
1540
o 10 20 30 40 50 60 70
• MITSUBISHI
. . . . ELECTRIC 2-163
ML9XX1 SERIES

I Far-field pattern parallel to heterojunctions 13 1/
The ML9XX1 laser diodes lase in fundamental 1.0 ...-----"""7r-r------,
change with the current. They have a typical 0
!l.
emitting area (size of near- field pattern) of 1.0X1. S
25 /.t rn'. Fig. 7 and 8 show the typical far- field S"
0
patterns. The full angles at half maximum points 1:
g 0.5
(FAHM) are typically 30deg. and 35deg., respectively.
'>"
';:
.lli
'"
0::
o + 50
Off - axis angle (deg)

perpendicular to heterojunctions 13 1.
1. 0..--------,...---------.
0
!l.
S
S"
0
1: 0.5
g
'">
';:
.lli
"
0::

In digital optical transmission systems, the
against the input pulse current waveform is a main
concern. In order to shorten the oscillation delay
time, the laser diode is usually biased close to the
threshold current. Fig. 9 shows a typical response
g ~~H+H+H+H+~~7H+HtH~H+H+~H+~
fall time is shorter than O.2ns) is applied. Rise/fall
.~ r-~--~--~-+--~_4~~--~_4--~
ro \
time is typically O.3ns at Ib = Ith and Po = 5mW. ~10~-----+----~----~-----+-----~----~-~,,~-----~-4--~
O%--~~~-t--+__i~_r~~~--~~
[
500ps/div
" • MITSUBISHI
2-164 . . . . ELECTRIC
MIT$UBISHI LASER DIODES
ML9XX1 SERIES
I Monitoring output Fig. 10 Light output VS. monitoring output current

mirror surfaces, front and rear surfaces (see the
outline drawing). The rear beam can be used for
6
5
v
monitoring power of the front beam since the
power of the rear beam is proportional to the
~
,§ 4
/
frontone. The rear-side beam is received by the built-
0
0..
:;Q 3
/
in monitoring PO to be output as the monitoring
current. Fig. 10 shows typical light output vs.
:;
0
.E 2
/
monitoring photocurrent characteristics. Above the
threshold current, the monitoring photocurrent
$ /
increases linearly with the front light output. The
o
V
monitoring current is typically O.SmA when the o 0.5 1. 0
(0) (1) (2)
front light output is SmW.
In the ML9911, monitor photodiodes is not
emitted from the back of package.
Monitoring output is typically 1mW when the
front light output is SmW.
2-165
MITSUBISHILASER DIODES
ML9XX1A SERIES
TYPE
NAME ML9781A, ML9911A I
' - - - - - - - - - ' - , . - - - - - .
ML9XXl A series are InGaAsP High Power laser .. Stable fundamental transverse mode oscillation
diodes which provide a stable, single transverse • Low threshold current, low operating current
mode oscillation with emission wavelength of • Built- in photodiode (ML9781 A)
1550nm and standard continuous light output of • High reliability, long operation life
15mW. • High power (CW 15mW, Pulse 40mW)
ML9XX 1A are hermetically sealed devices having • 1550nm typical emission wavelength
high-performance; high reliability, and long-life laser
sources. for OTDR ~ystems and long - distance Digital communication systems,OTDR systems
optical communication systems.
ABSOL~TE MAXIMUM RATINGS

Po· Light output power (peak) CW 20 mW
VRL. Reverse voltage (Laser diode) - 2 V
VRO Reverse voltage (Photodiode) - 20 V
Tc Cas.e Temperature - - 20-+ 50 'C
Tstg Storage temperature - -40-+ 100 'C
Note 1: Duty less than 1 %, pulse width less than 1 f.l s.
Limits
Min. Typ. Max.
lop Qperating current CW, Po = 15mW - 75 120 mA
Vop Operating voltage CW, Po-15mW - 1.5 2.0 V
Po (P) Pulse light output Pulse, IF = 350mA (Note 4) 40 - - mW
,1, P Peak wavelength CW,Po= 15mW 1520 1550 1580 nm
t.,1, ~pectral half width CW, Po = 15inW . - 8 - nm
8/1 Beam divergence angle (parallel) CW, Po -15mW - 30 - deg.
8l Beam divergence angle (perpendicular) CW, Po = 15mW - 35 - deg.
tr, tf Rise and fall times IF = Ith, Po = 15mW, 10 %-90% - 0.3 0.7 ns
Monitoring output current CW, Po = 15mW, VRO = 1V, RL= 10 Q
1m
(Photodiode) (Note 2) 0.1 0.3 - mA
10 Dark current (Photodiode) VRO = 10V - 0.2 0.5 f.lA
Ct Capacitance (Photodiode) VRO = 1OV, f = 1MHz - 8 20 pF
Pm (Not. 3) Monitoring light output CW, Po -15mW - 0.6 - mW
3 : Pm only apply to ML9911 A.
4 : Duty cycle less than 1 %, pulse width less than 1 f.l s.
' . MlTSUBISH.I
2-166
"ELECTRIC
ML9XX1A SERIES
OUTLINE DRAWINGS
;6 9:+:~. 03 Dimensions in mm (¢ 9mm, 4- pin, Low

MAX;68.1 cap package)
c
'g
o
~
g-
~'EM
~J~
Reference slot
PD +
(4)
II
S
• +(3) Case
II
LD
~~!i!I\=-~:r'f (2) (I)

-+-.,...,--~----"..., N M
+1en , 4-" O. 45
P. C. D. "2.54
(1 )(3)(2)
(4)
Dimensions in mm
1±0.
~ r--r-+--r---t-~rn;l---r
~g ~ L..._L,L-'.-,LJ.~~~~---1
o
~
Case ~
g 1> l±O.l CD ••-1+1ldJ7-l*l---<O ~
] L~D
chip Ceramic
~~-: ']14
6~
+1
LD I I U!
~
~
: I:
~
~
r--:
~
1.3±0.1.1
(Luminous point)
• MITSUBISH.I
. . . . ELECTRIC 2-167
ML9XX1A SERIES
. FOR OPTICAL COMMUNICATION
I Light output va. forward currrent Fig. 1 Light output vs. forward current (CW)
Typical light output vs. forward current characteristics 20r------T----.rrr~----,
are shown in Fig. 1. The threshold current for lasing 50'C

is typically 15mA at room temperature. Above the
~' 15
threshold, the light output increases linearly with
current, and no kinks are observed in the curves.
.s
~
An optical power of about 15mW is obtained at Ith 5 10
<>
+ 60mA. 50
As can be seen in Fig.l. Ith and slope efficiency 1::
·TJ (dPo / dlF) depends on case temperature; :3' 5
0
laser current. (control the case temperature or laser 0 150
Fig. 2 Pulse light output vs. forward

Fig. 2 shows a typical light output vS.forward current (pulse)
current under pulse operation.
Pulse conditions are pulse width tp = 1 fJ. sec and
duty = 1 %. They emit light. power of 40mW up to
50"C on case temperature. ' ~ ~~--~--~~~~---4
~
:o~ 2Or-----+l~1-+_----+_----1
tp=l/lS8C
1:: Duty=l%
~
10r---~~----+-----+-----;
~
~
O~L-~----~----~--~
o 100 200 300 400
Pulse forward currant IF (mA)
Fig. 3 Temperature dependence of

I Temperature dependence of Ith, lop threshold and operating currents
Typical temperature dependence of the threshold ! 100
70
..L.-I- ~
and operating currents (15mW) is shown in Fig. 3. c.
.2 lop(15mW)
50
The characteristic temperature To of the threshold 40
current is typically 65K, for To ~ 50"C where the 30
20 .!
definition of To is Ith ex: exp (Tc/To). ~I~ ~
10
7 ---
5
4
3
2
1
-20-100 10 20 30 40 50 60 70 80
2-168
ML9XX1A SERIES

are shown in Fig. 4. In general, as the case Tc=60'C ->., 'I--- 25 'C
~
slightly against the constant current IF. VF varies §
typically at a rate of - 1mV/oC at IF = 1mA and !!o 30
lOmA. E
~
::l
" 20
.,
'E
0
"-
~
10 J
o
o
~ 1.0 2.0

Tc=25'C
shown in Fig. 5. In general, at an output of l5mW,
(FWHM) is typically 8nm at an output of l5mW.
case temperature and the forward current (output l! ~ 15mWX1.0
level).
U j AA
10mW XI1. 3
5mW X2.5
Ith X 112. 6
1542 1550 1558
Wavelength A (nm)
wavelength at an output of l5mW is shown in Fig. 6. 1565
As the temperature rises, the peak wavelength po~15mJ.,
shifts to the long - wavelength side at a rate of E 1560 L
about O.5nm/oC. -5 V
0.
1555 L
.r;;
t;, /
~
..
c:
> 1550
I
~ /
""If., 1545 I
/
1540 I
-20 -10 0 10 20 30 40 50
. .'.. . ELECTRIC
MITSUBISHI 2 -169
ML9XX1A SERIES

I Far- field pattern to heterojunctions .e II
The ML9XXI A laser diodes lase in fundamental 1.0....-------,:------,
change with the current. They have a typical emitting
area (size of near- field pattern) of LOX1.25 f.l rrI'. 0
Q.
Figures 7 and 8 show the typical far-field patterns. SCo

The full angles at half maximum points (FAHM) are S0
0.5
typically· 30deg. and 35deg., respectively. E
~
.,
.2:
Iii
~
+50
Fig. 8 Far- field· patterns in plane perpendicular

to heterojunctions e.L
1.0r---------~=r-----------,
0
Q.
S
S::J
0
E 0.5
g
.,
.2:
I Monitoring output
mirror surfaces, front and rear surfaces (see the
'outline drawing). The rear beam can be used for
monitoring the power of the front beam since the
power of the rear beam is proportional to the front Fig. 9 Lightd output vs. monitoring output current
one. In the ML9XXIA series, the rear beam power
is changed into photocurrents by monitor
photodiodes. Fig. 9 shows typical light output vs.
monitoring photocurrent characteristics. Above the
threshold current, the monitoring photocurrent
increases linearly with the front light output. The ~
::J
Co
monitoring current is typically O.3mA when the S
o
front light output is 15mW.
In the ML9911 A, monitor photodiodes is not
emitted from the back of package.
Monitoring output is typically O.6mW when the 0.5 1. a
(1) (2)
front light output is 15mW. Monitoring output (rnA)
• MITSUBISHI
2- 170 "ELECTRIC
ML9XX2 SERIES
TYPE
NAME ML974A2F, ML9922
ML9XX2 is a DFB (Distributed Feedback) laser diode .• Low threshold current typical 20mA
which oscillates in a single wavelength with .High stable fundamental transverse mode oscillation
emission wavelength of 1550nm and standard • High side mode suppression ratio typical 40dB
continuos light output of 5mW. (Tc = 0-+ 60 "C)
ML9XX2 are hermetically sealed devices having • High speed of response (Rise and fall time typically
the photo diode for optical output monitoring. This 0.2nsec)
is a high-performance, high reliability, and long-life
laser diode. APPLICATION
Long-distance, large-capacity optical communication
systems

Tc Case Temperature - 0-+60 -c
Tstg Storage temperature - -40-+ 100 -c
ELECTRICAUOPTICAL CHARACTERISTICS (Tc = 25-c)

Limits
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
lop Operating current CW,Po-5mW 45 90 mA
Vop Operating voltage CW,Po-5mW 1.2 1.8 V
T} Slope efficiency CW,Po-5mW 0.25 mW/mA
AP Peak wavelength CW,Po=5mW - 1550 - nm
811 Beam divergence angle (parallel) CW,Po-5mW 30 deg.
81- Beam divergene, angle (perpendicular) CW,Po-5mW 35 deg.
Monitoring output current CW, Po = 5mW, VRD = lV. RL= 10 Q 0.1 0.25 - mA
1m (Photodiode) (Note 1)
tr. tf Rise and fall times IF - Ith. Po - 5mW. 10-90 % 0.2 0.4 ns
SMSR .Side mode suppression ratio CWo Po - 5mW. 0- + 60 "C 30 40 dB
Pm(Note 2) Monitoring Light Output CW.Po-5mW 0.5 mW
2-171
MITSUBISHI LASER DIODES,
ML9XX2 SER1ES
OUTLINE DRAWINGS
~ 5.6~g.03 Dimensions in mm (if> 5.6mm; 4 pin,
~ 4.B ± 0,3 with thick cap)
(4) (3)
~ -lli- f
If Jli
PDTSTLD
se
'"'"
;!1
~ RO.15MAX.
8 r~'
I I ...E.'" c (I) (2)
I 0
+1
"" .&
...J 0
~C
r-- :Refere nee plane

lI-~r--
Ii I I
,
+1
4 -~O.45
~ , (3)
(1) (4) (2)
~
P.C.D
Dimensions in mm
(Chip carrier type
package)
± 0.2
1 ±O.I
Case ~
(I) •• -!tW*--<O (2)
~~-cir~I'!~
SO +1 L£)
, -~ ~ .~
Ceramic ~
(Luminous point)
d
!'
2-172
ML9XX2 SERIES
Typical light output vs. forward current characteristics 6
are shown in Fig. 1. The threshold current for lasing
is typically 20mA at room temperature. Above the
threshold. the light output increases linearly with
current. and no kinks are observed in the curves.
An optical power of about 5mW is obtained at Ith
+ 25mA.
As can be seen in Fig. 1. Ith and slope efficiency
T/ (dPo / dlF) depends on case temperature •
0~0--~~--~--~~--~--~100
laser current. (Control the case temperature or laser
in monitor PD becomes constant.)
Fig. 2 Temperature dependence of threshold

I Temperature dependence of threshold current (lth), . current and operating current
operating current (lop) and slope efficiency ( T/ ) < 100
-- ....
E 70 I, I.
A typical temperature dependence of the threshold lop(5mW)
J....o"
50
40
I ,..,
,...., ......
Fig. 2. The characteristic temperature To of the 30 Ith
20
threshold current is typically SOk in Tc~ 40 "C. 50k
~
in Tc > 40"C. 10
7
5
4
3
2
1
-20-100 10 20 30 40 50 60 70 80
A typical temperature dependences of the slop Fig. 3 Case temperature dependence of slope efficiency
efficiency T/ is shown in Fig. 3. The gradient is- 0.5
- O.013mW/mA/"C
~ 0.4
~
-- --
E
0.3
g
r-
r-- t-.
:~ 0.2
:;
£! o. 1
o
-20-100 10 20 30 40 50 60 70 80
2-173
ML9XX2 SERIES
I Forward current ys. Yoltage Fig. 4 Forward current VS. voltage

Typical forward current v~. voltage characteristics 50
Tc =50-c- l.-wc
,..,
«
typically at a rate of - 1.0mV/"C and - O.9mV/"C
,.s 30
,!i,
at IF = 1mA and 10mA, respectively. 1:
!
S
u
20
"E
...~
0 10 J
o
o
J 1.0 2.0
Fig. 5 Light output dependence of emission spectra
III Emission spectra Tc=25'C

shown in Fig. 5.
I
" - Po =5mW-
./
~'-"" -
J ~o=3mw-
A ,./
.......
) -... Po=lmW_
....... /\.'/\'Y
I IF=lth-
Emission spectrum under 2.5Gb/s (NRZ) modulation .... A ,...
A
"
is shown in Fig. 6.
1550 1555 1560
Typical spectral width (Chirping) is about O.15nm
Wavelength ~ (nm)
at - 3dB, O.35nm at - 10dB and O.80nm at - 20dB.
Fig. 6 Spectrum at modulation

Tc =25'C
2.5Gb/s NRZ
Peak=5mW
A Ib=lth-
1550
~
} \..
1555
Wavelength ,1. (nm)
-- 1560
. - . ·MITSUBISHI
2-174 ~B.ECTRIC
ML9XX2 SERIES
.~
c:
about O.OSnm/"C. Q.
'"
,£; 1555
C.
j !"""'"
.1--' !"""'"
~ 1550
~ ...... ......
1 1545
!L
1540
-20-10 0 10 20 30 40 50 60 70 80
I Far-field pattern Fig. 8 Far- field pattern (parallel)

1.0r------.....,.~----.....,
The ML9XX2 -laser diodes lase in fundamental
transverse (TEool mode and the mode does not
change with the current. They have. typical emitting
area (size of near-field pattern) of 1.0 x 1.25 tt rrf. '5Q.
Fig. S. and 9 show the typical far- field patterns. '50
~
The full angles at half maximum points (FAHM) ,£;
0.5
~
.~
.!iIII
a:
o· 45
Angie (deg.)
Fig. 9 Far- field pattern (perpendicular)
'5Q.
'5o
Angie (deg.)
. • . MITSUBISHI
..... ELECTRIC . 2-175
ML9XX2 SERIES
I Pulse response Fig. 10 Pulse ·response wavef.orm

In digital optical transmission systems. the response
Ib=lth
wavelength and speed of the light output against
the input pulse current. waveform is a main
10'h
r
90-- -- - - - - - -- -- --
P o =5mW
-- --- -- -
concern.
I \
laser diode is usually biased close to the threshold ,./. .\
current. Fig. 10 shows a typical response waveform I \
when a rectangular pulse current (rise/fall time is
shorter than 0.1 ns) is applied. Rise/fall time is
II --- --- \
10 --
r
- - -- -- -- --- ~- --
typically 0.2ns at Ib = Ith and Po = SmW. 0%
I
200ps/div
II Monitoring output Fig. 11 Light output vs. monitoring output current

beam can be used for monitoring power of the
6
5
v
front beam since the power of the rear beam is ~
E 4 /
proportional to the front one. In theML9XX2
series, the rear beam power is changed into
~
&.
'5Q 3
/
photocurrents by monitor photodiodes. Fig. 11
shows typical light output vs. monitoring photo-
'50
2 /
current characteristics.
Above the threshold current, the monitored
.E
~ /
photocurrent increases linearly with the front light
output. The monitoring output current is typically
a V
a 0.25 0.5
(0) (0.5) (1.0)
O.2SmA when the front light output is SmW. In the
ML9922, monitor photodiodes are not installed in (Monitoring light output Pm (mW))
the laser package. Monitoring output is emitted
from the back of package. Monitoring output is
typically O.SmW when the front light output is
SmW.
2-'176
ML9XX3 SERIES
TYPE
NAME ML9783F
ML9XX3 series are InGaAsP High Power laser • High Power (CW 30mW, Pulse 120mW)
diodes which provide a stable, single transverse .1550nm typical emission wavelength
mode oscillation with emission wavelength of • High speed of response
1550nmand standard continuous light output of • Stable fundamental transverse mode oscillation
25mW. • Low threshold current, low operating current
ML9XX3 are hermetically sealed devices having • Built- in monitor photodiode
the photodiode for optical output monitoring. This • High reliability, long operation life
high-performance, high reliability, and long-life laser
diode is suitable for such high-power applications APPLICATION
as the light sources for OTDR systems and long - OTDR systems, optical communication systems.

1m Forward current (Photodiode) - 2 mA
Tc Case temperature - + 20-+30 ·C
Tstg Storage temperature - - 40-+ 100 ·C
Note 1.: Duty less than 1 %. pulse width less than 1 /l. S.

Limits
Min. Typ. Max.
VOP Operating voltage CWo Po= 25mW - 1.5 2.0 V
Po (P) Pulse light output Pulse. IF = 800mA (Note 2) 120 - - mW
AP Peak wavelength CWo Po = 25mW 1520 1550 1580 nm
~A Spectral half width CWo Po= 25mW - 8 - nm
8 II Beam divergence angle (parallel) CWo Po=25mW - 30 - deg.
81. Beam divergence angle (perpendicular) CWo Po = 25mW - 35 - deg.
tr. tf Rise and fall times IF = Ith. Po = 25mW. 10 %-90 % - 0.3 - ns
Monitoring output current CW, Po = 25mW. VRO = 1V. RL = 10 Q -
1m (Photodiode) (Note 3) 0.1 0.3 mA
10 Dark current (Photodiode) VRO = 10V - 0.2 0.5 /l.A
Ct Capacitance (Photodiode) VRO = 1OV. f = 1 MHz - 8 20 pF
Note 2: Duty cycle less than 1 %. pulse width less than 1 /l. S.
3 : RL is load resistance of photodiode.
. • MITSUBISHI
. . . . ELECTRIC 2-177
ML9XX3 SERIES
FOR OPTICAL, COMMUNICATION SYSTEMS
OUTLINE DRAWINGS
"9~~.03 Dimensions in mm (¢J 9mm, 4- pin,

MAX"S.l Low cap package)
.
~
f ~
~ c
(4) ,(3)
+
8 "& c•••
~~~~~
111-
!!l
II . II
+10
~
1
~
. gs .~0 :; Reference slot
d ~d~
PO S LO
Reference +=4I!!~f"IlI1!=~J~f
P~ N C"'i
(2) Cl)
, 4-" O. 45
P.c. D. "2.54
(1 )(3)(2)
(4)
• ,,'MrrsuBlsHl
ML9XX3 SERIES
I Light output VB. forward current characteristic Fig. 1 Light output vs. forward current (CW)
Fig. 1. shows the typical light output vs. forward 30
current characteristic of ML9XX3. The threshold
current Ith at room temperature is about 25mA.
Tc=25'C
/
Above the threshold. the light output increases
linealy with current. and no kinks are observed in
/
the curves. An optical output of about 25mw can /
be obtained at Ith + 95mA.
V
/
/
o
o
/ 50 100 150
Fig. 2 Pulse light output vs. forward current (Pulse)

Fig. 2. shows the typical light output vs. forward 150~T~c-=~2~5'C~----'------r----'
current characteristic of ML9XX3 under pulse
operation. Pulse conditions are pulse width t p = 1 J1. ~
E
sec and duty = 1 %. More than 120mW is obtained ~
100
~
at IF = aOOmA. SCo
S0
tp=1~sec
1: Duty = 1 "
,!i 50
~::J
0..
o~ __ ~ ____ ~ ____ ~ __ ~
o 200 400 600 800
Pulse forward current IF (rnA)
2-179
ML9XX5 SERIES
TYPE
NAME ML9925
ML9XX5 series are DFB (Distributed Feedback) laser • Excellent distortion characteristic.
diodes emitting light beam around 1550nm. 42- channel transmission test
They are well suited for light source in long- csa (composite second order) typical - 57dBc
distance analog transmission system for example CTB (composite triple beat) typical - 65dBc
cable television (CATV). The ML9925 are specially • Low relative intensity noise characteristic
designed for in fiber modules and mount on flat (typical - 155dB/Hz)
open packages. Rear output can be used for • Low threshold current (typical 20mA)
automatic control of the operating current or case • High - side mode suppression ratio (typical 40dB)
temperature of the laser. • High speed of response (typical O.2ns)
APPLICATION
Long - distance analog transmission systems

VRD Reverse voltage CPhotodiode) - 20 V
IFD Forward current CPhotodiode) - 2 mA
Tc Case temperature - + 20-+ 30 'c
T5t9 Storage temperature - -40-+ 100 'c
Limits
Min. Typ. Max.
7) Slope efficiency CWo Po = 10mW - 0.25 - mW/mA
AP Peak wavelength CWo Po = 10mW - 1550 - nm
ell Beam divergence angle (parallel) CWo Po = 10mW - 30 - deg.
eJ- Beam divergence angle (perpendicular) CWo Po -10mW - 35 - deg.
tr. tf- Rise and fall times IF = !th. Po = 10mW.10-90 % - 0.2 0.4 ns
SMSR Side mode suppression ratio CWo Po = 10mW 30 40 - dB
Pm Monitoring output CWo Po = 10mW - 1 - mW
CSO Composite second order 42 - channel transmission test - -57 - dBc
modulation depth D. M = 0.035.
CTB Composite triple beat average light output = 10mW to 20mW - -65 - dBc
RIN Relative intensity noise CWo Po = 10mW to 20mW. - - 155 -

measuring frequency fm = 550MHz dB/ Hz
. • ..MITSUBISHI
2 -180 .... ELECTRIC
ML9XX5 SERIES
OUTLINE DRAWINGS
Dimensions in mm (Chip carrier type
package)
~
(1)0 ~ 0(2)
Case.
~~--;.dli~
~ , 0t+1 I I I +1 II)
:::t,
---
-:,.---:.
.
It)
I I 10 It) 0
, -....: ...: '~'
Ceramic ~
(Luminous point)
d
2-181
LIGHT EMITTING DIODES
HIGH RADIANCE LIGHT EMITTING DIODES
ME1XX3 SERIES
TYPE
NAME ME1013
L -_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ ~
I
ME1 XX3 are AIGaAs double heterostructure light • Low operating current (50mA)
emitting diodes (LED) emitting light beams around *Easy drive with conventional transistors and IC's
850nm wavelength. A spherical micro - lens· is • With if> 100 If. m spherical lens
mounted on the light emitting area to provide a • High radiance and narrow beam angle
highly optical coupling efficiency from LED to fiber. * High optical coupling efficiency from LED to
ME1 XX3 is suitable for such applications as the fiber
light sources for data links and optical commu- • High speed response and high modulation
nication systems. frequency (30MHz, - 1.5dB)
• High linearity in light output vs. current
characteristic
APPLICATION
Optical data link, optical communication systems,
and other optical information systems

IF
Forward IDC Tc:S:50'C 75
mA
current (Note 1)J Pulse (Note 2) Tc;;;; 50'C 120
VR Reverse voltage - 3 V
T.tg Storage temperature - - 55-+ 125 'c
TCmaX-TC)
Note 1: Forward current derating (Tc > 50 'C) : IF (Tc) = IFmax ( Tcmax- 50
2 : Duty ratio;;;; 50 %. repetition;;; 100kHz

Limits
Min. Typ. Max.
AP Peak wavelength IF= 50mA 820 850 880 nm
Ld Spectral half width IF- 50mA - 45 - nm
Light output IDC
IF = 50mA . 1.0 1.5 -
Po mW
I Pulse (Note 3) IF = 100mA 2.0 3.0 -
f) Beam diverging angle IF -50mA - 40 deg.
IF = 25mA, IRF = 4mAp-p,
fc Cut- off frequency 15 30 - MHz
- 1.5dB (optical signal)
VF Forward voltage IF -50mA 1.6 2.2 V
IR Reverse current VR-3V 10 /.lA
..
Note 3 : Duty ratio = 50 %, repetitiOn = 100kHz.
.• .MITSUBISHI
ME1XX3 SERIES
OUTLINE DRAWINGS
Dimensions in mm
(I)
~c.se
f(2)
• .MITSUBISHI
3-4 .... ELECTRIC
ME1XX3 SERIES
a Light output va. forward current Fig. 1 Light output VS. forward current
Typical current dependence of the light output is
Tc = 25"C
shown in Fig.l. Light power of typical 1.5mW is
,/
obtained at 50mA. Over the forward current of 4.0
/
10mA, excellent linearity in light output vs. current ~ /
""
,5
is obtained and enables the LED to be applicable 0
Cl. /
in analog systems.
/" "
'5c.
'50 2.0
.E V
V
'"
:.J
50 100 150
ITemperature dependence of light output Fig. 2 Temperature dependence of light output

Fig.2 shows typical relative light output vs. case
temperature characteristics when the light output is 1. 1
IF-50m~1
normalized for Tc = 25 "C. As the case temperature normalized
rises, the relative light output decreases at a rate I'. for Tc=25"C
of - 0.01 5dB/oC. '5c. 1.0

r"-I'o.
'5o r"-
.r. r"-
~
.,.,
.~ 0.9
r"-
~
" r'--
O. 80 10 20 30 40 50 60 70 80
II Emission spectra Fig. 3 Typical emission spectra

Typical emission spectra is shown in Fig.3. The
Tc = 25°C
spectral half width is typically 45nm. Peak IF.50mA
wavelength are in a range from 820 to 880nm 1.0
~
depending on production lots at room temperature. '5
13- 0.8
1\
::>
o
0.6 L1
0.4 / 1
0.2 I 1~
0
V
..-' ~
800 850 900
Wavelength A (nm)
• MITSUBISHI
ME1XX3 SERIES
II Case temperature dependence· of the peak wave- Fig. 4 Temperature dependence of peak wavelength shift
length shift
14 t- IF =50mA ~ ~
Fig. 4. shows typical case temperature dependence 12 t- normalized for To = 25 "C
of the peak wavelength shift with the light emitting E 10
./
-5 8
peak wavelength being 0 at forward current of 6
./
:f
L: io""
50mA and case temperature of 25 ·C. 4
'"
L: 2 L
As the case temperature rises. the peak t;, 0 L
wavelength shift to the long wavelength side at a ..
c:
.Sl
>
-2
-4 L
i-". O.29nm/'C typ_
rate of about 0.29nm/·C. ~ -6 L

-" -8 V"
~ -10 ./
-12 ./'
-14
-20-10 0 10 20 30 40 50 60
Case temperature T c ("C)
II Modulation characteristics Fig. 5 Typical frequency modulatin characteristics

Typical frequency modulation characteristics are
shown in Fig.5. A bandwidth of 30MHz is typically iil
;:g
obtained when it is defined as the frequency range S 0
c.
with in which the modulated light output does not So "-
drop to the - 1.5d8 level.
~-1.5 ~
In pulsed operation. response time of the light c:
.2
1\
output is typically 12ns. I'
~-3.0
~
I'
E
~-4.5
j
I F =25mAdc+4mA p • p
c'E
-6.0 1 I I 1I I
1 2 5 10 20 50 100
Frequency f (MHz)
m Far- field pattern Fig. 6 Typical far-field radiation pattern

Typical far- field pattern is shown in Fig.6. Full
angle of the beam at half maximum intensity is 1.0
r
\,
typically 40 deg. .t '"c:
Diameters of the light emitting region and the
lens are 35 IL m and 100 IL m respectively.
-e"
~
.~
(/)
c: 0.5 J
$
.5 I
E
V ~
.!ll
""a:'"
o ./ ~
-90 -60 -30 0 30 60 90
Angle (deg)
• MITSUBISHI
3-6 ..... ELECTRIC
ME1 XX3 SERIES
Fig. 7 Coupling characterstics of the LED to

I Coupling efficiency various step index optical fibers.
The coupling efficiency depends on the product of 100
~ II
"-
core diameter and numerical aperture (NA) of a
50
§-~ r- -H·,
fiber. Typical efficiency and light power coupled Z
c> X 00
into various step index fibers are plotted in Fig.7.
The dashed line shows the theoretical limit. For
20 I-d
(!)
..: X "-
..:
Z-E ," 00 Q")
(y) (y)
00
example, with a fiber having a core diameter of
Z E
"--~
(y)
00 ~y ..:..:
zz
10 I-X xx
150 J1, m and NA = 0.39, the coupling efficiency is E 55 ~'f'
"- ~ E E
about 30 %. At a low operating current of 50mA, 5 I-tg ~
00
"- "-
about 500 J1, W is obtained. '"
,5
0.
~
..1..0'
y.6 --
(y)",
~~
8"
~~
1
50
I 100 200 500 1000 2000
JJ 5000
[Core diameter (/1 m) x NA]'
Fig. 8 Coupling loss due to offset of the fiber axis.

m Allowance In fiber aligning This data is for step index fibers.
10
The ME1013 release you from difficult and
,PTICAl FIBER CORE: t/J BO /1 m
troublesome aligning of fibers because of their
excellent radiation patterns. Fig.B. shows variation
NA=O.17
I
8
of coupling loss due to offset of the optical axis. m
Fig.9. shows the coupling loss due to distance d 3
6 .\
'"'"
between the top of the lens and the fiber end.
The allowable range by fiber couple has been
.9
'"
.5
0. 4 \ /
enhanced, making handling much easier.
u"
0
2 \ L
o -80
'"
-40 o
.L
Offset (/1 m)
Fig. 9 Coupling loss due to the distance between top

40 80
of the lens and the fiber end.

10
I I I II OPTICAL FIB~RI
8 r-
!) c=l
CORE: </> 80 /1 m.
NA=0.17
co U
3 6
''""
.9
4
'"
,5
0. ~
u"
0 2
,I'
..... V
-2
10 20 50 100 200 500
Distance d (/1 m)
" MITSUBISHI
ME1XX4 SERIES
TYPE
NAME ME1504, ME1514
MEl XX4 are AIGaAs double heterostructure light • LOW operating current (50mA)
emitting diodes (LED) emitting light beams around *
Easy drive with conventional transistors and IC's
850nm wavelength. A spherical micro - lens is • With ¢> 200 IJ- m spherical lens
mounted on the light emitting area to provide. a • High radiance and narrow beam angle
highly optical coupling efficiency from LED to fiber. *
High optical coupling efficiency from LED to
MEl XX4 provides a high radiance, narrow beam fiber
angle characteristic. MEl XX4 series are hermetically • High speed response and high modulation
sealed devices, resulting in high reliability and long frequency (30MHz, - 1.5dB)
operating life. It is suitable for such applications as • High linearity in light output vs. current
the light sources for data links and optical characteristic
communication systems.
APPLICATION
Optical data link, optical communication systems,
and other optical information systems
. ABSOLUTE MAXIMUM RATINGS

IF
Forward I DC Tc';; SO·C 7S
mA
J
current (Note 1) Pulse (Note 2) Tc';; SO·C 120
Tc Case temperature - 40-+ 100 "C
Tstg Storage temperature - SS-+ 12S ·C
Note 1: Forward current derating (Tc> SO"(;) : IF (Tc) = IFmax (Tcmax- Tc )
Tcmax-SO
2 : Duty ratio;:;; SO %. repetition;;; 100kHz
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc = 2S ·C)
Limits
Min. Typ. Max.
AP Peak wavelength IF = SOmA 820 8S0 880 nm
LU Spectral half width IF - SOmA 4S nm
Po Light output
I DC IF -SOmA O.S 1.S
mV
I Pulse (Note 3) IF = 100mA 1.0 3.0 -
fJ Beam diverging angle IF = SOmA - 20 - deg.
IF = 2SmA, IRF - 4mAp-p.
fc Cut- off frequency 10 30 - MHz
- 1.SdB (optical signal)
VF Forward voltage IF = SOmA - 1.6 2.2 V
IR Reverse current VR=3V - - 10 pA
..
Note 3: Duty ratio = SO %. repetition = 100kHz.
. • MITSUBISHI
3-8 "ELECTRIC
HIGH RADIANCE LIGHT EMmlNG DIODES
ME1XX4 SERIES
OUTLINE DRAWINGS
> 5. 6MAX
Dimensions in mm
>4.7±0.2
(2)
'"
+1
.... m.
2->0.45+.
. ~
(1) 2.54±0.25 (2)
>5.6MAX
Dimensions in mm
;£! (1)
d
f
+1
"''"d
'"
d
+1
0
(2)
M
'"
+1
::
• MlTSUBlSHI
IA.ELECTRIC 3-9
ME1 XX4 SERIES
I Light output vs. forward current Fig. 1 Light output VS. forward current
Fig. 1. shows the typical light output vs. forward
Te=25"C
current of ME1504 and ME1514.
Light power of typical 1.0mW is obtained at
3
50mA. Over the forward current of lOrnA. excellent ~
lineality in light output vs. current is obtained and
,5
" " '"
0
<l.
" '"
enables the LED to be applicable in analog systems.
S 2 ""
./'
S
"
0
.E
.2'
..J
o
o
./' 50 100 150
1:1 Temperature dependence of light output Fig. 2 Temperature dependence of light output
Fig.2. shows typical relative light output vs. case
1. 1 IF =50mA L ~
temperature characteristics when the light output is normalized for Te = 25 'C
normalized for Tc = 25°C. As the case temperature .t::
c:
r--...
rises. the relative light output decreases at a rate .e" f"-. r-.....
of - 0.015dB/oC. ..5 1. a
~
"
Q
S l"--
o
l"--
r--...
.......
f'..
10 20 30 40 50 60 70 80
Case temperatureTc ("C)
II Emission spectra Fig. 3 Typical emission spectra

Typical emission spectra is shown in Fig. 3. The
Tc = 25"C
spectral half width is 45nm. Peak wavelength are
1.0 IF = 50mA
in a range from 820 ~ 880nm
production lots at room temperature.
depending on
1\
\
11
O. 2
/ \
V \
!'...
o -'800 850 900
Wavelength A (nm)
•. MITSUBISHI
3-10 .... ELECTRIC
ME1XX4 SERIES
III Case temperature dependence of the peak Fig. 4 Temperature dependence of peak wavelength shift
wavelength shift
Fig. 4. shows the case temperature dependence of
14 IF =50A I I
12 normalized for T c ; 25 "C
J
the peak wavelength shift with the light emitting E 10
8 /'
peak wavelength being 0 at forward current of 5
50mA and a case temperature of 25°C.
,;:
J:
6
4
V
As the case temperature rises, the peak wavelength
(/)
-S
2
0
.... V
shifts to the long wavelength side at a rate of '"t: -2 V 0.29nm/"C typ
~
> -4 /'
about 0.29nm/oC.
'"
;:
-"
-6
-8 V
l -10
./
V
-12
-14
-20 -10 0 10 20 30 40 50 60
&I Modulation characteristics· Fig. 5 Typical frequency modulation characteristics

shown in Fig. 5. A bandwidth of 30MHz is typically
obtained when it is defined as the frequency range
a
~
with in which the modulated light output does not
S"
drop to the 1.5d8 level. "
In pulsed operation, response time of the light
o
10 -1.5 1'\
~ 1\
output is typically 12ns. t:
.~ -3.0
r\
:;
"E
o
., -4.5
>
j
I F =25mAdc+4mA p _p
rI. -6.0
1 2 5 10 20 50 100
Frequency f (MHz)
iii Far - field pattern

Typical far- field pattern is shown in Fig. 6. Fig. 6 Typical far- field pattern
Full angle of the beam at half maximum
intensity is typically 20 deg. 1.0 ,
(
Diameters of the light emitting region and the
lens are 35 I.t m and 200 I.t m respectively.
'iii
.t:
-e"
t:
\
~
~
·iii
t:
0.5
.~
E
.!1!
"0::'"
o
-60
_b-"
40
V
20 a
Angle (deg)
't--
20
t-..
40 60
• MITSUBISHI
. . . . ELECTRIC 3 - 11
ME7XX2 SERIES
TYPE
NAME ME7022,ME7032
ME7XX2 are InGaAsP /lnP double heterostructure • High cutoff frequency, typically 150MHz
light emitting diodes (LED) emitting light beam • High coupling power, typically - 17dBm
around 1310nm. • Pulse rise and fall times: typical 3ns and 4ns
A spherical micro - lens is mounted on the light
emitting area to provide a highly optical coupling APPLICATION
efficiency from LED to fiber. Fiber - optic communication systems, local area
ME7XX2 provides a high radiance, narrow beam networks, CATV trunks, industrial control, data link
angle characteristic. Providing ring grooves from the
P - side area to the junction to form the mesa-
shaped light emitting area, thus reducing the
parasitic capacitance and realizing a high speed
response. ME7022 and ME7032 have high reliability
and long operating life. and are suitable for such
short-distance communication systems as LAN and
data links.

IF Forward current - 120 mA
VR Reverse voltage - 2.0 V
Tc Case temperature - -30-+ 80 °C

Limits
Symbol Parameter Test conditions ME7022 ME7032 Unit
Min. Typ. Max. Min. Typ. Max.
AP Peak wavelength IF - 100mA 1280 1310 1340 1280 1310 1340 nm
td Spectral half width IF - 100mA - 130 160 - 130 160 nm
PI Fiber coupled power (Note 1) IF = 1OOmA, G150/ 125. NA = 0.2 15 20 - 10 14 - /1.W
fc Cut - off frequency IF = 100mA. IRF = 4mAp· P. - 1.5dB - 150 - - 150 - MHz
tr / tl Rise and fali times Ip= 100mA. VF= 1V.10%-90% - 3/4 - - 3/4 - ns
VF Forward voltage IF - 100mA - 1.5 2.0 - 1.5 2.0 V
Notel: PI IS the maxImum avaolable power coupled into a fiber CG150/125, NA = 0.2)
• ME7022 optimum distance between the top of the spherical micro-lens and the fiber end is d.:::200 /1. m
• ME7032 optimum distance between the top of the cap lens and the fiber end is d.:::l mm
• MITSUBISHI
3 - 12 . . . . ELECTRIC
ME7XX2 SERIES
OUTLINE DRAWINGS
Dimensions in mm
(1)
f(2)
p.e.o.
4>2.54
Dimensions in mm
(1 )
ti
'"t--~~~:e.
f(2)
3- '" O. 45
Case
(1) (2)
'" 2. 54
P.C.D
• MITSUBISH.I
"'ELECTRIC 3 -13
ME7XX2 SERIES
I Fiber coupled power vs. current Fig. 1 Fiber co~pled power

20r----.---,r----.---,--~
VS. current in the ME7022
Typical current dependence of the fiber output in
G150/125
the ME7022 is shown ,in Fig.1. when the fiber of NA=0.2
G150/125, NA = 0.2 is used. The optimum distance ~
-3 151---+~-1-__;i"f"__;ii"""91_
between the top of the spherical micro -lens and
the fiber end is about 200 /.l m. At a case
temperature of 25·C, fiber coupled power is 20 /.l W
at 1OOniA.· At a case temperature 50 -C, it is LED d,,=,200ttm
typically 17 /.l W.
51--J'>'I---1-
~er
20 40 100
Typical current dependence of the fiber output in Fig. 2 Fiber 'coupled power VS. current in the ME7032
20r----r--~r_---r----r_~
the ME7032 shown in Fig.2. when the fiber of GI50
G150/125
/125, NA = 0.2 is used. Light output from the fiber NA=0.2
is typically 14 /.l Wand 12 /.l W at 100mA and case
151---+--1---+--1-~
temperature of 25·C and 50·C, respectively.
11 Emission spectra Fig. 3 Emission spectra

Typical emission spectra of the ME7XX2 is shown
Tc=25°C
in Fig.3. The spectral width at half maximum at IF =100mA
room temperature and a forward current of 100mA 2c::
::l
is about 130nm. The peak wavelength depends on .c:i 1. Ol----,.,----t-----;""-+_----_I
the light output and the operating case ~
>-
temperature. The peak wavelength ranges from 'ii
1280 to 1340nm at room temperature.
.~ 0.51----Ti~-~+_---_I
,~
j
1~L.OO-""'---~':"""--I.---:-:'::-..-.'"--:1-:600
Wavelength A (nm)
• 'MITSUEISHI
3 -14 .... ELECmIC
ME7XX2 SERIES
I Temperature dependence of 1-V Fig. 4 Forward current vs. voltage

Typical temperature dependence of the forward 100
current vs. voltage characteristics is shown in Fig.

25'C
4. In general. the voltage VF decreases slightly for
75~----~----+-----~~--~
the constant IF when the case temperature rises. 50C
As the case temperature rises. VF decreases
typically at a rate of -1.1mV/"C and -O.7mV/"C 50~----r-----+---~H-----,
for IF = 5mA and 50mA. respectively.
25~----~----+-~~1-----'
0.5 2.0
.. Modulation characteristics Fig. 5 Modulation characteristics

4
shown in Fig.5. A bandwidth of 150MHz is typically
3
obtained when it is defined as the frequency range @
;S 2
within which the modulated light output does not
5
drop to the - 1.5d8 level. %0 0
1: -1
r--.
g
c:
.2
;
::l
."
0
::!!
-2
-3
-4
" '\.
-5 IF =100mA
IRF =4mA p • p
-6 10 20 30 50 100 200300 500
Frequency f (MHz)
I Pulse response characteristics Fig. 6 Pulse response

Typical pulse response characterisics at an input
pulse current of 100mA and 1V pre - bias are Vb=lV
06 Ip =100mA
shown in Fig.6. The rise and fall times are as quick
I
90-- -- --/ - -- --- - - --- - - --- --
as about 3ns and 4ns respectively.
J \
.I. .\.
1 '\
I ~
10- - - - - - - --- - - -- - -- --- ~ r-
0%
r
2ns/div
Time (nsec).
• MITSUBISHI
.... ELECTRIC 3-15
PHOTODIODES
MITSUBISHI SILICON Pin PHOTODIODES
PD2XX1 SERIES
FOR OPTICAL COMMUNICATION AND RADAR SYSTEMS
TYPE
NAME PD2101
PD2XX1 is a silicon pin photodiode having a light • High speed response
receiving area of 500 J.I. m square suitable for the • Small dark current
light reception of 800nm wavelength band. They • Operating with low voltage
are well suited for optical communication systems. • Floating package
They provide high speed response and small dark • High reliability, long operating life
current. • Active area 500 J.I. mO
APPLICATION
. Light .receiving elements for optical fiber communi-
cation systems, instrumentation, POS, and others,
POS systems
ABSOLUTE MAXIMUM RATINGS·

VR Reverse voltage Topr:;;80"C.IR= lOIlA 30 V
IF Forward current T ~pr s: 80 "C 10 mA
Tc Case temperature - -40~+ 110 "C
Tstg Storage temperature - - 55-+ 150 "C
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc = 25 "C)

Limits
Min. Typ. Max.
R Responsivitv. VR - 10V, A - 850nm 0.40 0.45 - A/W
Ct Total capacitance VR=5V - 5 10 pF
10 Dark current VR = 10V .- 0.5 4 nA
A Wavelength range - 600-900 nm
tr Rise time VR-5V - I 2 - ns
•. MITSUBISHI
MITSUBISHI SILICON Pin PHOTODIODES
PD2XX1 SERIES
OUTLINE DRAWINGS
+5. 35±O, 1
Dimensions in mm
H7~g:65
+3, o±o, 1
(1)
¥
(2)
., 'iZ3
• "MI1SUBISHI
4-4 ..... ELECTRIC
MITSUBISHI SILI(;UN AVALAN\,;Mt: t"'MU I UUIUUt:.,
PD1XX2 SERIES
t1
TYPE
NAME PD1002, PD1032·
PDl XX2 is a silicon avalanche photodiode (Si-APD) • High speed response (pulse rise time l50ps)
having a light receiving area of 200 /.l m in • Flat frequency characteristics (cutoff frequency
diameter. Mitsubishi Si - APD realizes the P - side 2GHz)
incidence method having a deep junction of planar • High gain- bandwidth product (800GHz)
mesa structure, increasing the gain band width area • Low noise index in multiplication process « M0 3 )
and decreasing the noise generated by the • Active diameter 200 /.l m
multiplication mechanism.
APPLICATION
Light receiving element for optical fiber communi-
cation systems and optical telemetry systems

IR Reverse current 200 J.lA
Topr;:OSO'C
IF Forward current 10 mA
Tc Case temperature - -40-+ 110 'c

Limits
Min. Typ. Max.
V (SR) R Breakdown voltage 100 150 200 V
10 = 100 J.l A
{3 Temp.coeff.of V(SR) R - 0.12 - %/'C
Ct Total capacitance VR = 0.9V (SR) R - 1.5 2 pF
ID Dark current Va = 50V - 0.3 1 nA
R Responsivity Va - 50V, A - SOOnm 0.4 -
0.45' A/W
Mmax Maximum multiplication rate Ipo = 10nA, RL = 1k Q - 1000 - -
fc Cutoff frequency M = 100, RL = 50 Q, - 3dB - 2- GHz
NEP Noise equivalent power A -SOOnm - 1 x 10- 1•
- W/Hz
F Excess noise factor M -100 - M025 - -
With PD1032, the minimum coupling response is 0.3A/W and the typical coupling response is O.4A/W against G150/125
outgoing light.
• MITSUBISHI
JJTt&ELECTRIC 4-5
MITSUBISHI SILICON AVALANCHE PHOTODIODES
PD1XX2 SERIES
OUTLINE DRAWINGS
v.S.4±O.2 Dimensions in mm
';4.7±O.2 .
(1)
Ceramic
Window
f(2)
(2)
Dimensions in mm
PD1032 "5. 4±O. 2

"4. 7±O. 2
~ (I)
.,;
+1"-
.,;
:;J
tl
:!l
-
tl
h;::::::2tk
f(2)
"' Case
I I I "0.45
(1) (2)
,,2.54
P.C. D.
.I
• . MrrSUBISH.
4-6 ..... ELECTRIC
MITSUBISHI SILICON AVALANCHE PHOTODIODE5
PD1XX2 SERIES
I Responslvlty under no multiplication condition Fig. 1 Spectral response

Figure I shows POI XX2 's typical response 0.8
characteristic against wavelength at a 50Vbias.
Quantum efficiency 100% " "
;- " 80%
""
".
POI XX2 is a PIN structure APO suitable for ".
0.6 " .'"

receiving the lights having a wavelength band of
~ "
"
'"
".
60%
:s
~ ~
600 to 900nm like He - Ne laser (633nm) and -:::-" "' ........
".
.... .... '"
'" "
AIGaAs laser (750 to 900nm). At a wavelength of cr:
0.4
..,>- ........ ........
t-- \_ .... ....-- 40%
750nm, the response becomes about 0.5A/W at .~ _....
<II ........
peak. The dashed lines indicate quantum efficiency
levels.
C
~
0
0.
<II
0.2
........
.... --- --
20%
-- -- -- --
-~
o
500 600 700
Wavelength ). (nm)
800 900
"
1 000 11 00
I Multiplication characteristics Fig. 2 Multiplication characteristics

Typical voltage dependence of the multiplication 1000
25'C
rate at various wavelengths is shown in Fig. 2. 500
Multiplicaiton rate' as high as 1000 is obtainable
::;;
when the output voltage (product of multiplied j
~ 100 h1
photocurrent and load resistance) is smaller than
50 /1/
100mV.
Practically available responsivity is a product of ). -800nm
// "
the value in Fig.l and the multiplication rate M.A 10 ./"
value as high as 300A/W can be easily obtained. 5
). =600nm ........ ... v'" '
Because of the PIN structure, the POI XX2 have ........
_....,;.....-
'\
much amaller scattering of the multiplication rate ~- ). =1000nm
1
from device sto device, more uniform multiplication 0.6 0.7 0.8 0.9 1. 0
rate throughout the detecting area as compared
Relative bias voltage (VR/V (BR) R)
with reach through devices.
II Frequency response Fig. 3 Frequency response

Figure 3 shows POI XX2 's typical frequency
response characteristic. The cutoff frequency (the
frequency at output being - 3dB) at a 50-ohm load
is 2GHz or higher.
@ 0
:3
I- .- ~~
~
-3dB
0.
~ -10
::>
o
M=100
-20 ). =890nm
106 10 7 108 10'0
Frequency f (Hz)
• MITSUBISHI
. . . . ElECTRIC 4-7
PD1XX2 SERIES
. . Gain - bandwidth product Fig. 4 Multiplication rate dependence of cutoff frequency

The gain - bandwidth product of an APD is a , , , , ~\i+-
product of the multiplication rate and the cutoff _'>: r"'ooo.'
J<;)o~Q
':>,
dd!
'N IV' <S> O! "-~-
frequency. GB. It increases with M and approaches :r: \ ~ ~(;,,~,
, 1\, \
\
~ 'to- ell? ~
an asymptote which is determined by the GB of I, to-~I ~
,j,! ~ Q-s,
multiplication process. Fig. 4. shows the GB of the >
100 a I'. .l:S ;,.-
PDl XX2. The multiplication limited GB of the .""
c:
0-
\
\
,
' \
\ / ''''00
z00 ~
~
1>
"
devices is approximately 800GHz. Such a large GB
~
is required particul~rly in detection of very weak :::0 'uo 00 \ \
,
and very wideband signals. , 1'. \
u
S
\ ,
100
, , , \
10 100 1000
Multiplication rate M
iii Noise characteristics Fig. 5 Excess noise factor of multiplication process

Excess noise factor of the multiplication process 2a
depends on the multiplication rate M. It is generally
approximated by an expression M'. Fig. 5 shows
the noise characteristics of the PDl XX2. They
depend slightly on wavelength of incident light
u. 10
Ll
633n~
I V
II
signals. The constant. x .o,f the PDl XX2 is 5
V
",,"" ~,.
approximately 0.25. The PDl XX2 can be low noise
~""
detectors even in the high multiplication region
l-- 1-'1--"""'"
~
since their noise increment is so small. 2
V ""
l~V MO. 25
10 100 1000
Fig. 6
I Bias circuit
Fig. 6 shows an example of APD receiver circuit.
Because the multiplication rate obtained when a
constant reverse bias is added changes with
temperature. a stable operation for long time Fig. 7 APD bias circuit with temperature compensation
requires the compensation of the temperature
2SC869 2SC869
dependence of the multiplication rate. Figure 7 O-~Nr~----~~ r---~~ r---~--~~
(8)
shows an example of the bias circuit for
temperature compensation which uses an avalanche
diode (ADlOOO) for temperature compensation.
',MITSUBISHI
4-8 . . . . ELECTRIC
PD1XX5 SERIES
TYPE
NAME PD1005
PD1XX5 is a silicon avalanche photodiode(Si-APD) • High speed response (pulse rise time 750ps)
having a light receiving area of 500 It m in • Very low multiplication noise « MO')
diameter. Mitsubishi Si - APD realizes the P - side • Flat frequency characteristic (cutoff frequency
incidence method having a deep junction of planar 400MHz)
mesa structure. increasing the gain band width area • Very high gain - bandwidth product (400GHz)
and decreasing the noise generated ,by the • Active diameter 500 It m
multiplication mechanism.
APPLICATION
Light receiving element for optical fiber commu-
nication systems and optical telemetry systems

IR' Reverse current 200 JJ.A
Topr;;;; 80°C
IF Forward current 10 mA

Limits
Min. Typ. Max.
V (BR) R 8reakdown voltage 100 150 200 V
IR= 100 JJ. A
(3 Temp. coeff. of V(BR) R - 0.12 - %rC
Ct Total capacitance VR = 0.9V (BR) R - 5 7 pF
10 Dark current VR= 50V - 0.3 1 nA
R Responsivity VR = 50V, A = 800nm 0.4 0.45 - A/W
Mmax Maximum multiplication rate Ipo -10nA. RL -lk n - 1000 - -
fc Cutoff frequency M = 100. RL = 50 n, - 3dB - 0.4 - GHz
NEP Noise equivalent power A = 800nm - 1 x 10 ,. - W/Hz
F Excess noise factor M = 100 - Mo.25 - -
• MITSUBISHI
"'ELECTRIC 4-9
PD1 XX5 SERIES
OUTLINE DRAWINGS
if> 5.4 ± 0.2 Dimensions in mm

if> 4.7 ± 0.2
(I)
Ceram'lc
¥(2)
Case
(I) (2)
p.e.D.
• MITSUBISHI
4-10 "'ELECTRIC
MITSUBISHI SILICON AVALANCHE PHOTODIODE5
PD1 XX5 SERIES
SAMPLE CHARACTERISTIC
I Responslvlty under no multiplication condition Fig. 1 Spectral response

Figure I shows POI XX5 's typical response 0.8
Quantum efficiency 100% .... ....
characteristic against wavelength at a 50V bias. .....
....
80%
PO I XX5 is a PIN structure APO suitable for .... .... ..... .....
.....
receiving the lights having a wavelength band of ~ 0.6 .... .........
"- 60%
600 to 900nm like He- Ne laser (633nm) and AIGaAs ~
a: ..... ;( -::::-K
...... ~~ ~-
laser (750 to 900nm). At a wavelength of 750nm,
.~ 0.4
.....
- -~
- f\:- ---
.... 40%
/- - ---- -
the response becomes about 0.5A/W at peak. The ,~
c: ... ~~ -~
dashed lines indicate quantum efficiency levels. 0
C>
'" -'"
a:" 0.2
---- --
-- -- -- --\ ~.
20%
o
500 600 700 800 900 1000 1100
Wavelength i\ (nm)
II Multiplication characteristics Fig. 2 Multiplication characteristics

Typical voltage dependence of the multiplication 1000
25"C
rate at various wavelengths is shown in Fig. 2. 500
Multiplication rate as high as 1000 is obtainable
when the output voltage (product of multiplied ::i:
$ 100 ~
photocurrent and load resistance) is smaller than IiI
!!! /1/
c: 50
100mV. .2 /
Practically available responsivity is a product of ... '/
.11
A =800nm /,:,.
the value in Fig. I and the multiplication rate M. .":;0. 10 .)II ,. ,
. / " ,.....
::i: A =600nm
A value as high as 300A/W can be easily obtained. 5
Because of the PIN structure, the POI XX5 have
much smaller scattering of the multiplication rate
I-"
~~
-~/
-" A =1000nm
from device to device. more uniform multiplication 0.6 O. 7 O. 8 O. 9 1. 0
rate throughout the detecting area as compared
Relative bias voltage (VR/V (BR) R)
with reach through devices.

Figure 3 shows POI XX5 's typical frequency
response characteristic. The cutoff frequency ( the
frequency at output being - 3dB) at a 50-ohm load
is 400MHz or higher. iii'
3 0
- .-
~
,---
-3dB
C>
':5
~ -10
o
M=100
-20 A =890nm
106 10' 108 109 10'0
Frequency f (Hz)
• MITSUBISHI
"ElECTRIC 4 - 11
PD1XX5 SERIES
III Gain -.bandwldth product Fig. 4 Multiplication rate dependence of cutoff frequency
The gain - bandwidth product of an APO is a
, , , , ~~ \+-
product of the multiplication rate and the cutoff , " .I,?o<~·
frequency, GB. It increases with M and approaches , , ~~~~;~-
, 1\1", ,,,
~
I
an asymptote which is determined by the GB of 6 1". d'Q "0
'~Q~
multiplication process. Fig. 4. shows the GB of the ~ 1000 , , ,
'.
I
~"
"
..
POl XX5. The multiplication limited GB of the t;
.,c:: , ," ,-3 'Vo~
devices is approximately 400GHz. Such a large GB " ,'t> \\'t>
is required particularly in detection of very weak
0-
~
:::
\00 I'-~,
and very wideband signals. £
u"
, I'.
, , ,~
r, , ,
, , ,
100
10 100 1000
B Noise characteristics Fig. 5 Excess noise factor of multiplication process

Excess noise factor of the multiplication process 20
depends on the multiplication rate, M. It is generally
approximated by an expression M'. Fig. 5 shows
the noise characteristics of the PDlXX5. They
10 II
900nm ~
depend slightly on wavelength of incident light I
V
_
633nm,
signals. The constant, x, of the POl XX5 is 5
approximately 0.25. The POl XX5 can be low noise
... ,,"" ~~
detectors even in the high multiplication region
~ ~
::>
since their noise increment is so small. 2 ,
1l/:.~'" MO. 25
10 100 1000
Fig. 6
II Bias circuit
Fig. 6 shows an example of ApO receiver circuit.
Because the multiplication rate obtained when a
constant reverse bias is added changes with
temperature, a stable operation for long time Fig. 7 APD bias circuit with temperature compensation
requires the compensation of the temperature
VOin~-JV\Iv-.--_ _~_2"""""\SC8r6_9_.--_2,SC8:.6-,-9_~_-;_V-00UT
dependence of the multiplication rate. Figure 7 (8)
shows an example of the bias circuit for
temperature compensation which uses an avalanche
diode (AOl 000) for temperature compensation.
• MITSUBISHI
4 -12 "-ELECTRIC
MITSUBISHllnGaAs PHOTODIODES
PD7XX5 SERIES
TYPE
NAME PD7005, PD7035
PD7XX5 is an InGaAs pin photodiode having a • High Quantum efficiency
light receiving diameter of 80 f.J. m, which is suitable • Very small dark current
for receiving the light having a wavelength band of • High speed response
1000 to 1600nm. This photodiode features a high • Active diameter 80 f.J. m
Quantum efficiency and a very small dark current • Wavelength range 1000-1600nm
is suitable for the light receiving element for lo()g • High reliability, long operation life
- distance optical communications.
APPLICATION
Fiber- optic communication systems

IR Reverse current - 500 pA
Tc Case temperature - - 30~+ 80 'c
Tstg Storage temperature - -40~+ 100 'C
ELECTRICAL/OPTICAL CHARACTERISTICS(Tc = 25 'C)

Limits
Min. Typ. Max.
Ct Total capacitance VR = 10V, f = 1MHz - 1 2 pF
R Responsivity VR= 10V. ). = 1300nm 0.6 O.g' - A/W
fc Cutoff frequency VR = 10V, ). = 1300nm. RL = 50 Q, - 3dB 1 - - GHz
tr. tl Rise and fall time VR = 10V, ). = 1300nm. RL = 50 Q - 0.3 - ns
* Coupling response is typical 0.7 AI W to light output (GI 50/ 125) about PD7035.
• .MITSUBISHI
..... ELECTRIC 4 -13
PD7XX5 SERIES
OUTLINE DRAWINGS
~ 5. 4±O. 2
Dimensions in mm
I>4.7±O.2
~3.0±O.2
45"
(1)
f(2)
Dimensions in mm
Lens
(2)
p.e.D.
, .
. • .MlTSUBlSHI
4-14 .... ElECTRIC
PD7XX5.SERIES
I Spectral response Fig. 1 Spectral response
,., .....-
Typical spectral response at VR = 10V is shown in 1.0
Fig. 1. The PD7XX5 are suitable for detection of VR =10V..",
the spectral region between 1000 and 1600nm. At
V
a wavelength of 1300nm , the responsivity
typically about 0.9A/W.
is
~
5 /
a:
0.5
.~
..
.~
c
..
&
r!
o
1000 11 00 1200 1300 1400 1500 1600
Wevelength A (nm)
Fig. 2 Dark current vs. reverse voltage

I Dark current at case temperatures of 25. 50 and 80-c
Figure 2 shows PD7XX5's typical dark current vs. 1o-8r-----.-----.-----r---~
reverse voltage characteristics at Tc = 25"C, 50"C,

and 80 "C. The dark current at VR = 10V, Tc = 25"C
is typically 50pA. ~10-9~~~~----~----+---~
&!
~
0lD- 10 1-::=......~~----t_----+::.",...5_i
~
10- 11 1F-----t_---:-t_----+_-----j
a 5 10 15 20
Reverse voltage VR (V)
Fig. 3 Total capacitance vii.

I Total capacitance reverse voltage at frequency of 1MHz
Typical capacitance vs. reverse bias characteristics 2
are shown in Fig. 3. The total capacitance is f=lMHz
~
typically 1pF at VR = 10V.
a
o 10 20
Reverse voltage VR M
4-15
PD7XX5 SERIES
• Frequency response Fig. 4 Frequency response

Typical frequency response is shown in Fig. 4. For
V R =10V
the light' source, ML7XXI (.l. = 1300nm) was used.
o
The cutoff frequency (- 3dB) is higher than 1GHz. --........
til
;S
-4
----- ------ ~--
Is
c.
-8 "
oS -12
-16
o 0.5 1.0 1.5
Frequency f (GHz)
I Pulse response Fig. 5 Pulse response

Typical pulse response is shown in Fig'. 5. The I
ML7XXI series (wavelength: 1300nm. rise/fall time: I ,. I- V~=lOV
00
O.3ns) are used as light sources. Rise and fall times
of about O.3ns are typically obtained.
90- - -- -/-- --- --
--' -- --- --- ---
I
1\
.I .\.
'/ '\
I i\
-- -- -- - - - - - -- -~ -- --
--
10---
0%
v
I
0.2ns/div
Time (ns.) •
. .' 'MITSUBISHI ;
4-16 .....ELE.CTRIC.
PD7XX6 SERIES
TYPE
NAME PD7006
PD7XX6 is an InGaAs pin photodiode having a • High Quantum efficiency
light receving diameter of 300/.l m, which is suitable • Very small dark current
for receiving the light having a wavelength band of • Active diameter 300 /.l m
1000 to 1600nm. This photodiode features a high • Wavelngth range 1000-1600nm
Quantum efficiency and a very small dark current • High reliability, long operation life
and is suitable for the light receiving elements for • Wide effective area
monitor and long-distance optical communications.
APPLICATION
Fiber- optic communication systems. Light receiving
element for monitor.

IR Reverse current - 3000 /LA
Tc Case temperature - - 30-+ 80 "C
Tst9 Storage temperature - -40-+ 100 "C

Limits
Min. Typ. Max.
Ct Total capacitance VR = 10V, f = 1MHz - 10 15 pF
R Responsivity VA = 10V, A = 1300nm 0.6 0.9 - A/W
fc Cutoff frequency VA = 10V, A = 1300nm, RL = 50 C, - 3dB 0.2 0.4 - GHz
tr, tf Rise and fall times VR = 10V, A = 1300nm, RL = 50 C - 1 - ns
4-17
PD7XX6 SERIES
.FOR OPTICAL COMMUNICATION
OUTLINE DRAWINGS
1>S.4±O.2
Dimensions in mm
1>4.7±O.2
45" (1)
¥
(2)
4-18
PD7XX6 SERIES

,.-
Fig. 1. The PD7XX6 are suitable for detection of V A -10V........ ~
~
a wavelength of 1300nm, the responsivity is
~ /
typically about 0.9A/W. 5
rr:
0.5
:{c
0
.
c.
rr:'"
o
1000 11 00 1200 1300 1400 1500 1600
Wavelength ~ (nm)
Fig. 2 Dark current vs. reverse voltage at case

II Dark current temperatures of 25, 50 and 80 "C
Figure 2 shows PD7XX6's typical dark current vs.
reverse voltage characteristics at Tc = 25 ·C, 50·C,
and SO·C. The dark current at VR = 10V, Tc = 25·C
is typically 0.2nA. 510-8~----~~~+-----~----4
.Q ,
~
~10-9~----~~~+-----~----4
'"
~
o 5 10 15 20
Fig, 3 Total capacitance vs.

II Total capacitance reverse voltage at frequency of 1MHz
are shown in Fig. 3. The total capacitance is f=lMHz
typically 6pF at VR = 10V. u.
-9
20
10 i~ -
o
o 10 20
4-19
PD7XX6 SERIES
I Frequency response Fig. 4 Frequency response
--
Typical frequency response is shown in Fig. 4. The
ML7XXl (wavelength: 1300nm) are used as light
a
sources. The cutoff frequency (- 3dB) is higher than
O.4GHz.
Ii>
;S -4
--- --- 1---- ~ K--
!c.
e"
-8 '"
"
0-12
-16
o 0.1 0.2 0.3 0.4 0.5
Frequency f (GHz)
. . Pulse response Fig. 5 Pulse response

Typical pulse response is shown in Fig. 5. The
ML7XXl (wavelength: 1300nm, rise! fall time: O.3ns) 100
are used as light sources. Rise and fall times of 90 --7 V--
about 1ns are typically obtained.
I \
5!c
0
7. \
c.
(I)
CD
a::
I T
\
10 --- ------ ------ --
0%
1 ns/div
Time (ns)
• MITSUBISHI
4-20 .... ELECTRIC
PD7XX7 SERIES
TYPE
NAME
~P_D_7_0_0_A_7~________________~1
PD7XX7 is an InGaAs pin photodiode having a • High quantum efficiency
light receiving diameter of 40 /.l m, which is suitable • Very small dark current
for receiving the light having a wavelength band of • High speed response
1000 to 1600nm. This photodiode features a high • Active diameter 40 /.l m
quantum efficiency and a very small dark current • Wavelength range 1000-1600nm
is suitable for the light receiving element for long • High reliability, long operation life
- distance optical communications.
APPLICATION

IR Reverse current - SOO JiA
Tstg Storage temperature - -40-+ 100 °C
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc = 2S °C)
limits
Min. Typ. Max.
Ct Total capacitance VR = SV. f = 1MHz - 0.6 1 pF
ID Dark current VR= SV - O.OS 0.3 nA
R Responsivity VR = SV, .l. = 1300nm 0.6 0.9 - A/W
fc Cutoff frequency VR = SV• .l. = 1300nm. RL = SO Q, - 3dB 1.S 3 - GHz
tr, tf Rise and fall time VR = SV, .l. = 1300nm, RL = SO Q - 0.1 0.3 ns
•.... MITSUBISHI
..... ELECTRIC 4 - 21
PD7XX7 SERIES
OUTLINE DRAWINGS
Dimensions in mm
(I)
¥
Window
Chip
;Jtr~*~
+1 (2)
"!
Nt- E==iili==itr=r1;:='3
-
+1
"'
(1 (2)
Case ¢~:'~~03
• MITSUBISHI
4-22 . . . . ELECTRIC
PD7XX7 SERIES

. Fig. 1. The PD7XX7 are suitable for detection of ~
VR=5V./ V
a wavelength of 1300nm , the responsivity is V
typically about 0.9A/W. ~ V
~
a:
.~ 0.5
>
·iii
c
j
0
1000 11 00 1 200 1300 1400 1500 1600
Weveleng1h • (nm)
Fig. 2 Dark current vs. reverse voltage

II Dark current at case temperatures of 25. 50 and 80·C
Figure 2 shows PD7XX7's typical dark current vs. 10~8r-----'------r----~--~~
reverse voltage characteristics at Tc = 25 ·C, 50"C,

and 80 ·C. The dark current at VR = 5V, Tc = 25·C
is typically 50pA. ~ 10~9~~~+------r-----+----~
.Q
o 10 15 20
Fig. 3 Total capacitance vs.

I Total capacitance reverse voltage at frequency of 1 MHz
Typical capacitance vs. reverse bias characteristics 2r----------,----~f=~1M-H-z-,
are shown in Fig. 3. The total capacitance is
typically 0.6pF at VR = 5V.
°O~--------~1~O----------~20
Reverse vol1age VR (V)
• MITSUBISHI
"'ELECTRIC 4-23
PD7XX7 SERIES

Typical frequency response is shown in Fig. 4. For
VR=5V.Ll
the light source. ML7XX1 (,l. = 1300nm) was used. Iph = O.25mA
The cutoff frequency (- 3dB) is typically 3GHz.

CD
:3
a;
;:
0 0
c.
5c. -3 \
~
5 -6
a
-g
-12 \
13 .2 .5 .7 1 2 5 7 10
Frequency f (GHz)
II Pulse response Fig. 5 Pulse response

Typical pulse response is shown in Fig. 5. Rise and
fall times of about 0.1 ns are typically obtained. 10
n_ VR';5V
90---- ---- ---- - --v-- ---- ---- ---- ---- ----

...0"""",
1
10---- ---- --- ---- ---- ---- ---- --\- k--- ----.
O%ir--r-4~~--~~~~~~-~u~~-4
Time (ns) 0.2ns/div
'. MITSUBISHI
4- 24 ..... ELECTRIC
PD8XX2 SERIES
TYPE
NAME PD805A2
PD8XX2 is an InGaAs avalanche photodiode • High Quantum efficiency
suitable for receiving the light having a wavelength • Very small dark current
band of 1000 to 1600nm. This photodiode features • High speed response
a high Quant,um efficiency and a very small dark • Active diameter 50 Ii- m
current and is suitable for the light' receiving • Low noise
element for long - distance optical communications.
APPLICATION

IR Reverse current - 500 J.l,A
Tc Case temperature - - 30~+80 'C
Tstg Storage temperature - - 40~+ 100 ·C
Limits
Min, Typ, Max,
V (SR) R Breakdown voltage IR= 100 ~ A 40 70 90 V
Ct Total capacitance VR - 0,9V (SR) R. f = 1 MHz - 0,7 0,9 pF
ID Dark current VR = 0.9V (SR) R - 10 30 nA
T/ Quantum efficiency M = 1. A = 1300nm - 80 - %
fc Cutoff frequency M = 1O. RL = 50 Q. - 3dB 1 3 - GHz
F Excess noise factor M -10 - MO., - -
• MITSUBISHI
. . . . ELECTRIC 4-25
PD8XX2 SERIES
OUTLINE DRAWINGS
¢ 5.4± 0.2 Dimensions in mm

¢ 4.7±0.2
45'
(1 )
~I ¥
(2)
.• MITSUBISHI
4-26 . . . . ELECTRIC
PD8XX2 SERIES

Figure 1 shows PD8XX2's typical spectral response. 1.2
Dashed curves indicate quantum efficiency levels.
Quantum
efficiency
i00%, 90%
l 80%
0
I I70%
1.0
PD8XX2 is suitable for receiving the light having
.- .- '" .- 'V" '" ~
'" ~ "I
a wavelength of 1000 to 1600nm. The typical
~ ,,' "60%
"
.- .- ~ ,,' ... .......
0.8
quantum efficiency in this area is 80 %. ~
a: "'","'j ... "
0.6
.".~> ",~, '" ...... "
"''' "
"'",
c:
0 0.4
Q
<II .... "
a:CD
0.2
0 ...- V M=l
I \
O. 8 1. 0 1. 2 1. 4 1. 6 1. 8
Wavelength '- (J1 m)
Fig. 2 Dark current. photo current, and

II Multiplication multiplication rate vs. reverse voltage
Figure 2 shows PD8XX2's typical dark current, I ~
photo current, and multiplication rate vs. reverse Input power 0.3 J1 W
voltage characteristic. The dark current at 0.9V (SA) A

is about 10nA and the multiplication rate is about
10. f"- Dark curren
c:
~ 10-6
Photo current""
/ ::!:
r-- .-Y
"
(J
~
~ 10-7
1~
... 100 c:
.2
J 10
.~
Q
L,....=: ~
:E
"
::!:
10-9
o 20 40 60 80 100
Reverse voltage VA (V)
Fig. 3 Total capacitance vs. reverse

I Total capacitance vs. reverse voltage cha - voltage at frequency of 1MHz
racterlstlc
f = 1MHz
are shown in Fig. 3. The capacitance at 0.9V (SA) A G:'
is about 0.7pF. 8
U 3
CD
(J
c:
'"
.t::
(J
2
'"
Q
"
'"
(J
16
a r-....
I-
r--
00 10 20 30 40 50 60 70
Reverse voltage VA (V)
• MITSUBISHI
.... ELECTRIC 4-27
CANCELED PRODUCTS
PRODUCTS TO BE DISCONTINUED
LIST OF PRODUCTS TO BE DISCONTINUED

Year in Product to be
discontinued Replacement Remarks
data book
ML3401 ML3411 Package "40" .... "41", same chip
ML4014C ML40115C Same package, chip improved.
ML4014R ML40115R Same package, chip improved.
ML401SN - To be out of production.
ML401SC - To be out of production.
ML401SR - To be out of production.
ML440S - To be out of production.
ML4011QC ML40110R Pin connection "C" .... "R", same package.
ML40115N ML40115R Pin connection "N" .... "R", same package.
ML40117C ML44114C Package "01" .... "41", chip improved.
ML40117R ML40114R Same package, chip improved.
ML5704F ML57S4F Package "70" .... "7S", same chip.
MLS701A MLS411A Package "70" .... "41", same chip.
MLS705N - To be out of production.
MLS70SN - To be out of production.
'90 MLS41SN - To be out of production.
MLS418R - To be out of production.
MLS41SC - To be out of production.
MLS70SE - To be out of production.
ML7701A ML77S1A Package "70" .... "78", same chip.
ML77S1 ML77S81F Package "7S" .... "7S8", same chip.
ML7702 ML774A2F Package "70" .... "74A", same chip.
ML7912 ML7922 Package "91" .... "92", same chip.
ML9701A ML97S1A Package "70" .... "7S", same chip.
ML9702 ML974A2F Package "70" .... "74A", same chip.
ML9912 ML9922 Package "91" .... "92", same chip.
ME7522 ME7032 Package "52" .... "03", same chip.
PD7935 PD7035 Package "93" .... "03", same chip.
PD793S PD700S Package "93" .... "00", same chip.
PDS001 PDS05A2 Package "00" - "05A", chip improved.
PDS931 PDS05A2 Package "93" .... "05A", chip improved.
PDS002 PDS05A2 Package "00" .... "05A", same chip.
PDS932 PDS05A2 Package "93" .... "05A", same chip.
Note: The- user is recommended not to use the products to be discontinued in new desIgns.
• MITSUBISHI
..... ELECTRIC 5-3
OPTICAL-FIBER COMPONENTS GUIDANCE .,
LIST OF PRODUCTS
LD Module for Singlemode Fiber (Receptacle Type)

Light. etJiissiol1 OptiCal outPut
Connector Disbrete . Device
..P~t~Nu:tnber Wavel:un~th power J~ackagetype Fiber Page
, :.;., (mW)
Type Type No.
... (run) .'.
FU-OllSLD-N2 780 0.4 Receptacle - FC ML40116R 7-3
FU-16SLD-Nl 1300 1.5 Receptacle - FC ML776BIF 7-5
FU - 16SLD - N3 1300 0.2 Receptacle - FC ML776BIF 7-8
FU-17SLD-Nl 1300 1.5 Receptacle - FC ML776BIF 7-5
FU-17SLD- N3 1300 0.2 Receptacle - FC ML776BIF 7-8
LD Module for Singlemode Fiber (Coaxial Type)

. Ligllt emission Optical output
Connector Discrete Device
Parts Numb~L Wave\unf!1h power Package type Fiber. Type:. Type No. P~e.
'. (nm) • (mW) I .
FU-411SLD 1300 1.8 Coaxial 10/125 - ML776BIF 7- 11
FU -411SLD- 20 1300 20 Coaxial 10/125 - ML7XX1A 7- 14
FU-611SLD 1550 1.5 Coaxial 10/125 - ML9XX1 7- 16
DU-611SLD-15 1550 15 Coaxial 10/125 - ML9XX1A 7- 19
LD Module for Singlemode Fiber (DIP Type/Butterfly Type)

Light emission Optical. output
Connector. Discrete Device
I Parts .Number Wavelun~ll power .'. .Pac~etYP~ . Fiber Type Type No.
Page
. (nnij . (mW)
FU-43SLD-1 1300 2 DIP 10/125 - ML7701 7 - 21
FU-43SLD-2 1300 0.2 DIP 10/125 - ML7701 7 -24
FU-44SLD-1 1300 2 DIP w / cooler 10/125 - ML7XXI 7 -27
FU-44SLD-7 - ML7XXI
1300 10mW. Pulsed DIP w / cooler 10/125 7 -30
Screened
FU-45SLD 1300 2 Butterfly. w / cooler 10/125 - ML7XXI 7 -33
FU-64SLD-l 1550 1.5 DIP w / cooler 10/125 - ML9XX1 7 - 36
-
FU-64SLD-7 - ML9XXI
1550 10mW. Pulsed DIP w / cooler 10/125 7 -39
Sccreened
DFB·LD Module for Singlemode Fiber (DIP Type/Butterfly Type)

iLight emission Optical output
Connector Discrete Oevice
Patts Number Wavelungth power Package type Fiber Page
(run)· . (mW) Type Type No.
FU-41SDF 1300 1.5 DIP w / cooler 10/125 - ML7XX2 7 -42
FU-44SDF 1300 1.5 Butterfly. w / cooler 10/125 - ML7XX2 7 -42
Butterfly. ML7XX2
FU-45SDF-38 1300 3.6
w / isolator cooler
10/125 - 7 -45
Screened
FU-45SDF-4 Butterfly. -
1300 2 10/125 ML7XX2 7 - 48
w /isolator cooler
FU-48SDF-l Butterfly. -
1300 3.5 10/125 ML7XX2 7 - 51
w / isolator cooler
FU-61SDF 1550 1.5 DIP w / cooler 10/125 - ML9XX2 7 -54
FU-64SDF 1550 1.5 Butterfly. w / cooler 10/125 - ML9XX2 7 -54
Butterfly. ML9XX2
FU-65SDF-3 1550 2
w / isolator cooler
10/125 - 7 - 57
Screened
FU-65SDF-4 Butterfly.
1550 2 10/125 - ML9XX2 7 - 60
w / isolator cooler
FU-68SDF-2 1550 Butterfly. -
3.5 10/125 ML9XX2 7 -63
w / isolator cooler
•. MITSUSISHI
...... ELECTRIC 6-3
LIST OF PRODUCTS
LD Module for Multimode Fiber
LED Module
PD Module
APD Module
Dlgltal·Optical Transceiver Module (3R Type)
MF-156DS-
1300 155.52 40/15 EeL LD APD FC -108
TR124- 0021 003
MF-622DF-T12-
1300/1550 622.08 15/40/60 EeL LD,DFB LD Fe
007-011
MF-622DS-R13-
15
002 1300/1550 622.08 EeL PD,APD Fe
40/60
R14-002l003
.• MITSUBISHI
6-4 . . . . ELECTRIC·
LIST OF PRODUCTS
Dlgltal·Optlcal Transceiver Module (2R Type)
MF-32DF-T01/
840 32 4 ECL LED/PD FC
R03
Optlcal.Flber Connector
FC-01PN-(L)-SMF
FC-01PNW-(L)-SMF
Optical- fiber FC-01PN-(L) • PC-SMF Silica fiber
connector plug 0.3dB Typ. 7 - 121
FC-01PNW-(L) • PC-SMF (singlemode fiber 10/125)
(Singlemode fiber)
FC-01PN-(L) • SPC-SMF
0.3dB Typ.
FC-01PNW-(L) • SPC-SMF
FC-OIPN-(L)
0.3dB Typ.·
FC-01PNW-(L)
Optical- fiber FC-01PN-(L) • PC
0.05dB Typ. Silica fiber
connector plug 7 -123
FC-01PNW~(L) • PC (GI 50/125)
(Multimode fiber)
FC-01PN-(L) • SPC
0.05dB Typ.
FC-01PNW-(L) • SPC
FC-01RN(S) for singlemode fiber 7 - 121
Adaptor
FC-01RN for multimode fiber 7 -123
• MITSUBISHI
"ELECTRIC 6-5
MAP OF PRODUCTS
LOlLED Module
30 [LZ]: For Multimode Fiber

~FU-411SLD-20
E:SSl: For Singlemode Fiber
20 ~FU-611SLD-15
~ FU-64SLD-7
3
-5
10 ~FU-44SLD-7
""C
C
C1>
Cii 5
~,"C23,"
.0
:;::
E"
e FU-11LD-N
"""
'5
0.
'5
0
-.;
""E-
2
.,"C","C' FU-27LD
FU-1XSLD- N1
FU-4XSLD-1
FU-411SLD
FU-4XSDF
~ FU-.64SLD-1
FU-611SLD
FU-6XSDF
0.5
~ FU-011SLD-N2
W#/%l~~:m~-N
FU-1XSLD-N3
~ FU-43SLD-2
E222I FU-13LE- N/FU-34LE

0'1' I I I I I I I
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
PD/APD Module
fA,--------------------~~\fA~__________~~------------------~.~\
V PDModqle 1'0 Module ..
~ FU-04PD-N FU-1XPD-N
FU- 21 PD FU- 35PD •
flA ____- -__--~----~--~~\fA~____~------__~~______~____---.~'\
APPModule ..
".
.....
v
FU-05AP-N FU-1XAP-N
FU-25AP FU-310AP
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5

Wavelength ( ~ m)
• MITSUBISHI
6-6 ..... ELECTRIC
PRODUCT DESIGNATION CODE
PRODUCT DESIGNATION CODE
LD, LED, PO, APD MODULE
r- 42
F UI"" - -- S L 0 - -I""
- 1""-1""- 0
- Fiber
Module
Wavelength & Package
Wavelength Package
0 O.78,um or O.85/Lm Band Receptacle

1.3/Lm Band Receptacle
2 O.78,um or O.85/Lm Band Pigtail (MMF)
3 1.3,um Band Pigtail (MMF)

4 1.3/Lm Band Pigtail ( SMF)
6 l.55,um Band Pigtail ( SMF)
Development rank
S : For Singlemode Fiber

NO MARK : For Multimode Fiber
Device LD : Laser Diode

DF : DFB Laser Diode
LE : Surface Emitting Light Emitting Diode
PD : Photo Diode
AP : Avalanche Photo Diode
In .Case of Receptacle type,

Connector Type N: NTT - FC Type In Case of Pigtail type.
Optical power rank
METHOD FOR ORDERING OTHER THAN STANDARD PRODUCTS

(ONLY FOR FU - 42SLD TYPE LD MODULE)
Please. advise whether with sheath of optical fiber. for optical connector, and the length of optical fiber. as shown below.
FU-42LD-D -- c:=J -- ~ -- ~
_ _ _ _ ..J : 1.. ___ •
,
i-Sh~~th of optical fiber i Optical connector ----I Optical fiber length
~- - - ¢ 0.9mm (Nylon jacket) q---Without connector L----L (m)
B--- ¢3mm(PVC code) 1---With FC- 01 PN
• MITSUBISHI
"'ELECTRIC 6-7
SAFETY CONSIDERATION FOR LD MODULE
SAFETY CONSIDERATION FOR LD MODULE

(1) The maximum rating of LD module, is based ,r -- - - - - -- .... - -- -- ........ -- .......... --- -- ---- ........................ --- --- ...... .,,,
sw ,, ,
on optical output. For LD module application.
1mH
it should be handled carefully in order that
the output from the optical-fiber: cable will 10
kQ
not exceed the maximum rating.
+ 12V 0.068 0.068
~F ~F
(2) As a laser diode is delicate. it can be damaged
by surge current caused when ,power is
supplied or interrupted. To prevent generation
of surge current. for example. a slow-starter , ,,,
L .......... __ .......... __ ............ __ ........ ____ .. __ ............................ __ .............. ....
unit shown in Fig. 1 should be used. Fig. 1 Example of Circuit for Slow Starter
(3) As a laser diode can be damaged by static

electricity, appropriate precautions should be
taken to prevent static electricity. 50C 470pF
~------------------------------~Mr~~
RF Input
10mH
(4) When the LD module is driven constantly.
if the temperature varies. the optical output
varies inversely. If the temperature lowers. Tr(2SC1324)
the optical output of LD module may exceed
the maximum rating. For obtaining stabilized
optical output, and at the saine time for
protecting a laser diode. using an APC
(Automatic Power Control) circuit for example
as shown in Fig. 2 is strongly recommended.
(5) The beam emitted from the laser diode is Fig. 2 Example of Circuit for APC Circuit
invisible and may be harmful to the human
eye. A void any possibility of looking into
the laser package or the collimated beam
along its optical axis when the device is
in operation. Operation over the maximum Tl T2
ratings may cause failure of the device or
/\ 1\
a safety hazard. Power supplies for the device ;; \.1 \1 \J
0.
must be such that the maximum rating of
~ ~ ..1
the right output cannot be exceeded. Because -0
of the size of each module. the labels shown
below are attached to the individual laser
j 11 Current
12
container. They are illustrated to comply
with the requirements of DHHS standards
under the Radiation Control for Health and
Safety Act of 1968. Fig. 3 Optical Output for APC Drive
• MITSUBISHI D.ECTRIC CORP.

" " 2 . 3 . M•• unouch 2chor\lle, Chlyoda.-kll. T<*yo 100.-pen
TYPE -=-_____
.:.:N:::;O.__
:..:It:..:h____
m_A :.:lo"'p____
m_A _P..:.L____
mW_
AVOID EXPOSURE-Invisible AP run 1m mA @ ·c
Laser Radiation is emitted from
MANUFACTURED ----
fiber.
Ttis product conforms to OHHS reg~ations
21 CFR Subchapter J. .
Warning Label Aperture Label Certification Label
., . MITSUBISHI
...... ELECTRIC
FOR OPTOELECTRONIC COMPONENTS
1. Optical Output of Light-emission Module (LED, LD Modules)
(1) Receptacle type
Optical connector OPtical connector i ... i ..'.
_61------r--~O--<------'6 _ ,1:)Pt\eatJ?O~e"
\ ! I ' I 4 l t . t ; . 1 ' : i .,
OPtical- fiber cord .
R LED. LD module C2-3m)
(2) Pigtail type
L-__
f-_-L.._ _ _ _ _ _ _O_Pt_ic_B_1 .-1'00,",-= r.··.l>tical
.........p. • <>We
meter· ... · .....
.•. . '.·'·.·.1
.
2. Responslvlty of Light-receiving Module (PO, APD Modules)
-l
ri
LiJ -~:----~
J=1"
<c~_ -- -
RecePtacle type
Responsivity R = 1/ P CAl W)
PD. APD modules
,/ OPtical connector _
.. '---0
qp 0/ I '-----~
~~;
Pigtail type
Responsivity R = I/O.9P*CAlW)
Ad apter \ C _ m _ ' Optical connector coupling loss CO.3dB)
. . Idd
OPtical fiber PD. APD modules IS Inc u e .
3. Digital Optical Transceiver Module
Oscilloscope
Input 1 - - - - - - - - - 1 Input ( ~) f - - - - - - - - Output
Output ~
Clock signal
• . MITSUBISHI
"ELECTRIC 6-9
FOR OPTOELECTRONIC COMPONENTS
4. Insertion Loss of Optical Compornents
(1) Receptacle type
Optical- fiber cord Standard optical connector Optical connector
Insertion loss = - lOlog ~~ (dB)
(2) Pigtail type
Standard optical connector

Optical-fiber cord Optical-fiber
"---"--'-...:I<-----'---1-;,--, ~p[t=erJ==:j:;:~ ___......JJ:::====l:=:J

:: Connector -
~~.:[==1po To optical power meter
Insertion loss = - lOJog Ppl (dB)

. 0
•. MITSUBISHI
6-10 ~ELECTRIC
OPTICAL-FIBER COMPONENTS OATA SHEET
FU-011 SLD-N2
0.781..1 m Connectorlzed LD Module for Singlemode Fiber
LD module type FU - 0 11 SLD- N2 contains self-

pulsation AIGaAs LD (Laser diode) for O.78ttm
band and is used as light source for use in
intermediate and high speed local area network
systems.
FEATURES
• High - speed response
• Emission wavelength is in O.78ttm wavelength
band
• Connectorized package for FC connector
• With photodiode for optical output monitor
• Diodes are hermetically sealed
FU-011 SLD-N2
ABSOLUTE MAXIMUM RATINGS (Tc=25"C)

Items Symbols Conditions Ratings Units
Optical output power from
PF CW 1 mW
Laser diode fiber end (Note 1)
Reverse Voltage VRL - 2 V
Photodiode for Reverse Voltage VRD - 15 V
monitoring Forward Current IFD - 10 rnA
Operating case temperature Tc - - 20-60 "C
Storage temperature Tstg - -40-70 "C
Note 1) Singlemode fiber master plug with mode field diameter lOpm
OUTLINE DRAWINGS Unit (mm)
2- .p2. 6 x .p4. 4 Depth1 M8XO. 75 Thread

Reverse side
co
~
~I~I 1. -=-5-t--+---=-5-----l
~ 6 19
;1 LDi
A---i f
(Case) 2
FU-011 SLD-N2
•. MITSUBISHI
...... ElECTRIC 7-3
FU~011 SLD-N2
0.781..1 m Connectorlzed. LD Module for Singlemode Fiber
CHARACTERISTICS (Tc=25°C, unless otherwise noted)

Items Symbols Conditions Min. Typ. Max. Units
Threshold current Ilh CW - 45 70 rnA
Operating current lop CW - 55 85 rnA
Operating voltage Vop CW,IF = lop (Note 1) - 1.8 2.3 V
Optical output power from fiber end
(Note 2) PF CW,IF = lop 0.25 0.4 - mW
Central wavelength AC CW,IF = lop 785 780 800 nm

Rise and fall times tr, tf Ie = Ilh, 10-90 % (Note 3) - 0.5 - ns
Tracking error (Note 4) Er Tc = - 20-60 "C, APe - 0.5 - dB
Differential efficiency (Note 2) 1/ - - 0.04 - mW/rnA
Monitor .current lmon CW, IF = lop, VRO = 5V 0.1 0.4 - rnA
Dark current (Photodiode) 10 VRo=5V - - 1 p.A
Capacitance (Photodiode) CI VRO = 5V, f = 1MHz - 7 - pF
Optical connector type - - FC -
Note I) IF: Forward current (LD)
. Note 3) lB: Bias current (LD)
Note 4) Er=MAX!IO'!Og I'F r:s'C) !
EXAMPLE OF CHARACTERISTICS
0.5,----------------,
..
>
.1::
c::
0.8
-20·e .~ 0.6
25·e ·i
.!!! 0.4
(l
.2l 0.3
;;::: we 0.2
E,
.g 0
786 788
'AAJ 790
~A
792 794 796
~ 0.2
Co
Wavelength (nrn)
Light-emission spectrum
:;
a
:::I
o ~
§
I ..,
00.1
~
5i
0.75 -- -
E
.g 0.50
OL-_ _ L_~'_~~_L_ _ _L__~ ~
0
o 20 40 60 80 100 ~ 0.25
Forward current (rnA) SCo
S0 10 20 30 40 50 60 70
Forward current vs. Optical output power 0.2 0.4 0.6 0.8 1.0
] Monitor current (mA) Case temperature ("C)
li
0
Monitor current va. Case temperature vs.
Optical output power Threshold current
from fiber end
7-4
FU-16SLD-N1, FU-17SLD-N1
1.31.l m Connectorlzed LD Module for Singlemode Fiber
Module type FU-16SLD-Nl and FU-17SLD-

Nl have been developed for coupling a singlemode
optical fiber and a 1.3,um wavelength InGaAsP
LD (Laser diode).
FU -16SLD- Nl and FU:'17SLD- Nl are suitable
to light source for use in medium haul digital
optical comm~nication systems.
FEATURES
• High optical output
• Emission wavelength is in 1.3.um band
• Low threshold current (lOrnA typ.)
• Diodes are hermetically sealed FU-16SLD-N1 FU-17SLD-N1
ABSOLUTE MAXIMUM RATINGS (Tc=25°C)

Ratings
Items Symbols Conditions Units
FU -16SLD- Nl FU-17SLD- Nl
(Note 1) PF CW 2.5 2.5 mW
Laser diode fiber end
Reverse Voltage VRL - 2 2 V
Photodiode for Reverse Voltage VRD - 15 15 V
monitoring Forward. current IFD - 2 2 rnA
Operating case temperature Tc - - 20-65 -20-65 'C
Storage temperature Tstg - -40-85 -40-85 'C

2 - 4>2. 6 x 4>4.4 Depth1 M8 x O. 75 Thread
Reverse side en
""
a
-G-
1
""
24>2.6 x 4>4. 4 Depth1 M8 x O. 75 Thread
Reverse side
l.5 5
19 19 M
g
a
4 +1
en
PD ~ M
fr
3 1 (Case)
l.5
8.8 19 19
FU-16SLD-N1
e~f
3
~ 1 (Case)
FU-17SLD-N1
. • MITSUBISHI 7-5
. . . . ELECTRIC
1.311 m Connectorlzed LD Module for Singlemode Fiber
CHARACTERISTICS (Tc=25 cc, unless otherwise noted)

FU -16SLD-N1 FU-17SLD-N1
Threshold current Ith CW - 10 20 - 10 20 rnA
Operating current lop' CW - 30 65 - 30 65 rnA
Operating voltage Vop CWo IF = lop (Note 1) - 1.2 1.6 - 1.2 1.6 V
Optical output power from fiber enc
PF CW.IF = lop 1 1.5 - 1 1.5 - mW
(Note 2)
Central wavelength .l.c CW.IF = lop 1270 1300 1330 1270 1300 1330 nm
Rise and fall times tr. tf III = Ilh.1O-90 %(Note 3) - 0.3 - - 0.3 - ns
Tracking error (Note 4) Er Tc = - 20-65 "C. APC - 0.5 - - 0.5 - dB
Differential efficiency
(Note 2)
1/ - - 0,07 - - 0,07 - mW/mA
Monitor current Imon CWo IF ,,;, lop. VRD = 5V 0.25 1 - 0.25 1 - rnA
Dark current (Photodiode) ID VRD=5V - 0.1 1 - 0.1 1 /lA
Capacitance (Photodiode) Cl VRD = 5V. f = IMHz - 10 - - 10 - pF
Optical connector type - - FC FC -
Note 1) IF: Forward current (LD)
Note 2) Singlemode fiber master plug with ,mode field diameter 10llm
Note 3) Is : Bias current (LD)
Note 1) Er = ~AX 110 . log PF
PF (25"C)
I
• ' MlTSUBISHI
7-6 "ELECTRIC
Tc=Z5'C
IF=Iop
>- 0.8
:~
IJ)
<:
.s 0.6
Q)
l.5
3
-5
"0 0.2
<:
Q)
..,~
.0
0 1290 1295 1300 1305 1310 1315
E Wavelength (nrn)
....e 1
-20'C
~ 25'C
i:
0
c. 65'C
'5c.
'50 100 f\
m
90 --- --1-\ ~
.2 ?:
·iii
a. <:
0 0. 5 Q)
.S 1\
.,
Q)
.>
III
'\
Q;
a:
10 ---
0%
°OLL-L-~20~--~40~--~6~0----~8~0----=100 500ps/div
Pulse response
Forward current (rnA)
Forward current vs. Optical output power
• . MITSUBISHI
..... ELECTRIC 7-7
Module type FU-16SLD-N3 and FU-17SLD-N3

have been developed for coupling a singlemode
optical fiber and a 1.3tlm wavelength InGaAsP
LD (Laser diode).
FU-16SLD-N3 and FU-17SLD-N3 are suitable
to light source for use in medium haul digital
FEATURES
• Wide operating temperature range
• Emission wavelength is in 1.3tlm band
• Diodes are hermetically sealed FU-16SLD-N3 FU-17SLD-N3

Ratings
FU -16SLD- N3 FU-17SLD-NS
Optical output power from Pp CW 0.5 0.5 mW
monitoring Forward Current IFD - 2 2 rnA
Operating case temperature Tc - -30-85 -30-85 "C
Storage temperature rstg - -40-85 -40-85 "C

2- "'2. 6 x ",4. 4 Depth1 MBXO. 75 Thread
Reverse side '"
""d
-e.
1
2- "'2. 6x ",4. 4 Depth 1 MBxO. 75 Thread
~ill
Reverse side
9. 5±O. 3 1. -"..5-+-+--,5"-1
15 f------,1-"..9~f--_ _-,-,19,,--_ _..j M
PD
~I
4
~
3
g
1 (Case)
d
+1
FU-16SLD-N3 1.."-5-I-1-'5=--l
B.B 19 19
pr l 11D
~l
3
~1 (Case) FU-17SLD-N3
',MITSUBISHI
7-8 .... ELECTRIC.
1.31.1 m Connectorlzed LD Module for Singlemode Fiber

FU -16SLD- N3 FU-17SLD-N3
Operating current lop CW - 30 65 - 30 65 rnA
Operating voltage Vap CWo IF '" lop (Note 1) - 1.2 1.6 - 1.2 1.6 V
PF CW.IF = lop 0.1 0.2 - 0.1 0.2 - rnW
(Note 2)
Central wavelength i\c CW.IF = lop 1270 1300 1330 1270 1300 1330 nrn
Rise and fall times tr. tf 18 = Ilh.1O-90 %(Note 3) - 0.3 - - 0.3 - ns
Tracking error (Note 4) Er Tc = - 30-85 'C. APC - 0.5 - - 0.5 - dB
Differential efficiency (Note 2) T/ - - 0.01 - - 0.01 - rnW/rnA
Monitor current Iman CW.IF = lop, VRO = 5V 0.1 0.6 - 0.1 0.6 - rnA
Dark current (Photodiode) 10 VRo=5V - 0.1 1 - 0.1 1 /1. A
Capacitance (Photodiode) Ct VRO = 5V. f = IMHz - 10 - - 10 - pF
Note 1) IF : Forward current (LD)
Note 2)· Sing1emode fiber master plug with mode field diameter 10llm
Note 3) 18: Bias current (LD)
Note 4) Er = MAXI 10 • log PF
PF (25"<:)
I
• MITSUBISHI
..... ELECTRIC 7-9
1.31l m Connectorlzed LD Module for Singlernode Fiber
0.3.---------------------------~
Tc=25'C
IF=Iop
.~ 0.8
c
$
.5 0 6
~ .
. ~
~ ~ 0.4
5
0.2
.,c
"0
0.2
o'-----~lA~~~~~
~
..c
<;::
E 1290 1295 1300 1305 1310 1315

.g Wavelength (nm)
0
~ Light-emission spectrum
0.
....:J 25'C
0.
So 85'C IB=lth
] 0.1 100 f--+---t-J"l-A-1Ifu"-+--r--t---rr---+--t----1
.~
>-
90 - - - - - -p-"------
o .<:
III
C
$
.5
1
.~ 1
~'"
10 -- -- -- -- -- -- -- --\:-f'.-b:-
O%,r--+--~--r--+--+_~--~--+-~~
80 100 500ps/dlv
Forward current (mA) Pulse response
.• MITSUBISHI
7 -10 ~ELECTRIC
FU-411SLD
1.3 \.I m LD Module with Singlemode Fiber Pigtail
Module type FU-411SLD has been developed

for coupling a singlemode optical fiber and a
1.3tlm wavelength InGaAsP LD (Laser diode).
FU-411SLD is suitable to light source for high-
speed long haul digital optical communication
systems and measuring instruments.
FEATURES
• With photo diode for optical output monitor
• Diodes are hermetically sealed FU-411SLD
ABSOLUTE MAXIMUM RATINGS (TC=25"C)

PF CW 3 mW
Reverse Voltage VRD - 15 V
Photodiode for
monitoring Forward Current 1m - 2 rnA
Operating case temperature Tc - O~65 oc;
Storage temperature Tstg - -40~70 oc;
2-</>2.4
)It
+1
N
-
-
-1-
I
I
<D
~
I
I
"
cD
~
en
ci
~
;-
Fiber
-
1.7 3.1 11
20 17.7 1000+500
FU-411SLD
• MITSUBISHI
. . . . ElECTRIC 7 - 11
FU-411SLD
1.31..l m LD Module with Singlemode Fiber Pigtail

Threshold current llh CW - 10 30 rnA
Operating voltage .' Vop CW.IF = lop (Note 1) - 1.2 1.6 V
Optical output power from fiber end PF CW.IF = lop 1 2 - mW
Central wavelength .l.c CW.IF = lop 1270 1300 1330 nm
Spectral width (FWHM) LU CW.IF = lop - 3 - nm
Rise and fall times tr. tf 18 = Ilh.10-90 % (Note 2) - 0.3 - ns
Tracking error (Note 3) Er Tc = 0-65 "C. APC - 0.4 - dB
Differen tial efficiency TJ - - 0.13 - mW/mA
Monitor current lmon CW.IF = lop. VRO = 5V 0.1 0.6 - rnA
Dark current (Photodiode) 10 VRo=5V - 0.1 1 /lA
Capacitance (Photodiode) Ct VRO = 5V. f = IMHz - 10 - pF
Note 2) Is: Bias current (LD)
Note 3) E, = MAxi 10 • log PF
PF (25"C)
* Module up to 85"C in operating case temperature (Tc) is also available.
Please consult with sales office about specification and so on. if necessary.
FIBER PIGTAIL SPECIFICATIONS

Items Specifications Units
Type SM -
Mode field dia. 10 ± 1 /lm

Cladding dia. 125 ± 2 /lm
Jacket dia. 0.9 mm
• MITSUBISHI
7 -12 . . . . ELECTRIC
FU-411SLD
1.31.1 m LD Module with Singlemode Fiber Pigtail
3r-----------------------------~
Tc=25'C
iF=iop
~
.§ 0.8
>
.~
"0 III
c: c:
CD
S 0.6
.5
1i 2
.~
;;:::
0.4
-E
e .!!!
~
~ !
0.2
~
0 O'C
a
0
5a 25'C 1300 1305 1310 1315 1320 1325
...
:I Wavelength (nrn)
0
65'C
«i Llght-emlsslon spectrum
.Il
0.
0
f\
100/---+--t--/-+I1...,...+--±--t-__._t---t---t----1
i8=ith
90 ------ -I-I --=-

Ii
~,
80 100 . \
Forward current VS. OptIcal output power \
~~/oI-----_+_---.....-'l_---+----_+_----±_---_+-----_+_----'\-,..t-----;___;
500ps/div
Pulse response
.'·MlTSUBlSHI
....B.ECTRIC 7-13
FU-411 SLO-20
1..3 ~ m LD Module with Singlemode Fiber Pigtail
Module type FU-411SLD-20 has been developed

for coupling. a singlemode optical fiber and a
1.3.um wavelength InGaAsP high power LD (Laser
diode).
FU-411SLD-20 is suitable to light source for
measuring instruments. (especially. OTDR)
FEATURES
• High optical output power
• Emission wavelength is in ~ .3.um band
• Laser diode are hermetically sealed FU-411 SLD·20

CW 150
Forward Current IFL rnA
Laser diode Pulse (Note1) 700
Operating case temperature Tc - 0-60 "C
Note 1) Pulse condition: Pulse width"" lOllS. Duty ratio"" 5 %
2-.p2.4
Jr~
:
-
-
I
I
I
I
""u-i
-e.
<J)
0
-e.
r -
1.7 3.1 11
20 17.7 1000 "i oo
3 1
o
~
NC
NC
o
2 4 (Case)
FU·411 SLD·20
• MITSUBISH.I
7 -14 ...... ELECTRIC
FU-411SLD-20
1.31..1 m LD Module with Singlemode Fiber Pigtail

Threshold current Ith - - 25 100 rnA
Operating current lop Pulse (Note 1) - 500 650 rnA
Operating voltage Vop IF = lop. Pulse (Note 1,2) - 1.8 3.5 V
Optical output power from fiber end PF IF = lop, Pulse (Note 1. 2) 20 80 - mW
Central wavelength AC IF = Iop,Pulse (Note 1,2) 1270 1300 1330 nm
Spectral width (FWHM) t-A IF = lop, Pulse (Note 1,2) - 6 - nm
Rise and fall times tr, tt IB = lth, 10-90 % (Note 3) - - 3 ns
Note 1) Pulse condition: Pulse width,. 10115, Duty ratio" 5 %
Note 3) Ie : Bias current (LD)

Type SM -
Mode field dia. 10 ± 1 /.lm
Cladding dia. 125 ± 2 /.lm
Jacket dia. 0.9 mm
Pulse Te =25°c
IF=Iop
pulse
>
~ ' c:iii O.B
-5 .~ 0.6
.,c:
'0
..,~
BO
1;; OJ
.0 ~ 0.4
<.=
E
.g 0.2
.,
~
60°C
30 OL-____ ~~ __ ~ ____ ~ ____ ~ ____ ~.
c. 1270 12BO 1290 1300 1310 1320·

'5c. Wavelength (nm)
'50 40 Light-emission spectrum
0;
.!.l
0.
0
BOO 1000
Forward current (Pulse) vs. Optical output power
• MITSUBISHI
..... ELECTRlc- 7 -15
FU-611SLD
1.55 iJ. m LD Module with Singlemode Fiber Pigtail
Module type FU-611SLD has been developed

FU-611SLD is suitable to light source for high-
speed long haul digital optical communication
FEATURES
• Low threshold current (14mA typ.)
• Diodes are hermetically sealed FU·611SLD

Pr CW 2.4 mW
monitoring Forward Current 1m - 2 rnA
2-.p2.4
Fiber
11
FU·611SLD
'.. MITSUBISHI
7 -16 "'-ELECTRIC
FU-611SLD
CHARACTERISTICS (Tc=25 °C, unless otherwise noted)

Threshold current Ith CW - 14 35 rnA
Operating voltage Vop CW.IF=Iop (Note 1) - 1.2 1.7 V
Optical output power from fiber end PF CW.IF= lop 1 1.5 - mW
Central wavelength Ac CW.IF = lop 1520 1550 1580 nrn
Spectral width (FWHM) Ll)' CW.IF = lop - 4 - nm
Rise and fall times tr. tf IB = Ith. 10-90 % (Note 2) - 0.3 - ns
Differential efficiency T/ - - 0.06 - rnW/mA
Monitor current Imon CWo IF = lop. VRO = 5V 0.1 0.6 - rnA
Dark current (Photodiode) 10 VRo=5V - 0.1 1 IJ-A
Capacitance (Photodiode) Ct VRO = 5V. f = 1MHz - 10 - pF
Note 3) Er = MAXi 10 • log PF
PF (25'C)

Type SM -
Cladding dia. 125 ±2 /.lm
Jacket dia. 0.9 mm
'.. MITSUBISHI
. . . . ELECTRIC 7 -17
FU-611SLD
1.55 Il m LD Module with Singlemode Fiber Pigtail
3r-----------------------------,
Tc=25'C
[F=[OP
>-
3 ·iii 0.8
c:
,5
"0
c:
.~ 0.6
CD
~
~ 2
~O.4
""E a:
.g 0.2
li;
;;:
0
o15~30~--~~~~~~~~~--~15~7~0----·~1580
Co
...
:J Wavelength (nm)
Co O'c
S0 Light-emission spectrum
25'c
"iii
.\,2
15. I'B=lth
0
100 1\
90 -------,- ------ --- ---t'---
.~ I
III
c: 1\
.~ 1\.
~
Forward ,current (mA) .'.!!l"
~ \
10 --- --- --- --- --- --- --- --\;, --- ---
0%r--+--~--+_~~~--4---~~~~~
500ps/div
Pulse response
. ' " MITSUBISHI

7 -18 . . . . ELECTRIC
FU-611SLD-15

for coupling a single mode optical fiber and a
1.55.um wavelength InGaAsP high power LD (Laser
diode).
FU-611SLD-15 is suitable to light source for
measuring instruments. (especially, OTDR)
FEATURES
• Laser; diode are hermetically sealed FU-611SLD-15

CW 150
Forward Current IFL rnA
Laser diode Pulse (Note 1) 700
Note 1) Pulse condition: Pulse width ~ lOllS, Duty ratio" 5 9t;
-
-I -- ~
--
I
I
I
I
<d"
u-i
~
01
c:i
~
- r -
1.7 3.1 11
20 17.7 1000+;00
3 1
o
~
NC
NC
o
2 4 (Case)
FU·611SLD-15
.• MITSUBISHI
.... ELECTRIC 7 -19
FU-611 SLD-15
1.55 Il m LD Module with Singlemode Fiber Pigtail

Threshold current , llh - - 30 100 rnA
Operating current lop Pulse (Note 1) - 500 650 rnA
Operaitng voltage Vop IF = lop. Pulse (Note 1.2) - - 3.5 V
Optical output power from fiber end PF IF = lop. Pulse (Note 1.2) 15 30 - mW
Central wavelength .l.c IF = lop. Pulse (Note 1.2) 1520 1550 1580 nm
Spectral width (FWHM) t..l. IF = lop, Pulse (Note 1.2) - 9 - nm
Rise and fall times tr. tf In = Ilh.lO-90 % (Note 3) - - 3 ns
Note 1) Pulse condition: Pulse width';; lOllS, Duty ratio" 5 %
Note 3) In : Bias current (LD)

Type SM -
Mode field dia. 10±1 pm
Cladding dia. 125 ± 2 pm
Jacket dia. 0.9 mm
Pulse Tc=25'C
IF=Iop
pulse
>-
~ 'iiic: 0. 8
-5
"0
c: 25'C
.S:'" 0.6
~
'" 30 .~
II
<;:::
&0.4
E
,g 0.2
:;; 60'C
~
0
Cl 1570
'5Cl Wavelength (nm)
'50 Light-emission spectrum
iii
.!01
0.
0
600 800 1000

• MITSUBISHI
7-20 . . . . ELECTRIC
FU-43SLD-1
1.3\.1 m LD Module with Singlernode Fiber Pigtail
Module type FU -43SLD-l has been developed

1.3t(m wavelength InGaAsP LD (Laser diode).The
package is incorporated with dual-in-line pins
for electrical connection.
This module is suitable to light source for
high-speed long haul digital optical communication
FEATURES
• Emission wavelength is in 1.3t(m band
• Low threshold current (lOrnA typ,)
• Dual- in -line package
• Diodes are hermetically sealed FU-43SLD-1

PF CW 3 mW

15.4
3.2
~
21.8 27MAXX 19±O.3
12.5 ~
LJ------j.
FUNCTION
3.8
NC
PIN 14 NC
CASE GRAND. LASER ANODE
Fiber 6 NC
7 DETECTOR CATHODE
8 DETECTOR ANODE
9 LASER CATHODE
10 CASE GRAND. LASER ANODE
11 NC
.I 12 NC
13 NC
14· NC
FU-43SLD-1
• MITSUBISHI
. . . . . ELECTRIC 7-21
FU-43SLD-1
1.3 1..1 m LD Module with Singlemode Fiber Pigtail
CHARACTERISTICS (Tc=2SoC, unless otherwise noted)

Items Symbols - Conditions Min. Typ. Max. Units
Operating voltage Vop CWo IF = lop (Note 1) - 1.2 1.6 V
Central wavelength ,lc CW.IF = lop 1270 1300 1330 nm
Spectral width ( FWHM) t.,l CW.IF = lop - 3 - nm
Rise and fall times tr. tf IB = lth. 10-90 % (Note 2) - 0.3 - ns
Tracking error (Note 3) Er Tc = 0-65"C.APC - 0.4 - dB
Differential efficiency 11 - - 0.13 - mW/mA
Monitor current lmon CW.IF = lop. VRO = 5V 0.1 0.6 - rnA
Dark current (Photodiode) 10 VRo=5V - 0.1 1 /.LA
Capacitance (Photodiodel Ct VRO = 5V. f = 1MHz - 10 - pF
Note 2) In: Bias current (LD)
Note 3) E, = MAXI 10 • log PF r:5"C)

Type SM -
Mode field dia. 10 ± 1 /.Lm
Cladding dia. 125 ± 2 /.Lm
Jacket dia. 0.9 mm
. '. .MITSUBISHI
FU-43SLD-1
1.31.1 m LO Module with Singlemode Fiber Pigtail
Tc=25°G
IF=lop
,~0.8
t:
$
,5 O. 6
Q)
'.>,
~0.4
'5c.
DOG
o :1'=29: -:0- -:-;:12~95°- - -"13;!; 0:;!'OJU1J l .lJ1~3#05!- J~.l.- -;-1+'31C; -0- - ;1~315
Wavelength (nm)
'5 1 Light-emission spectrum
o
]
.~
Is=Ith
o (\
100 "
90 -- ~l- -- --- ---
>-
,-t=
'"t:
Q)
1\
0~0~~~~--~~---~60~--~8~0----~100
.£ 1\,
Forward current (mA)
Q)
'.>co, '\
Oi
a: \
10 -- -- -- -- -- -- -- -\: -..--- --
0%
500ps/div
Pulse response
" MITSUBISHI
..... ELECTRIC 7 - 23
FU-43SLD-2
1,31.1 m LD Module with Singlemode Fiber Pigtail

1.3.um wavelength InGaAsP LD (Laser diode).
The package is incorporated with dual- in -line
pins for electrical connection.
This module is suitable to. light source for
short and medium haul digital local area network
systems.
FEATURES
FU-43SLD-2

PF CW 0.3 mW
Operating case temperature Tc - 0-65 'C
Storage temperature Tstg - -40-70 °C

25.4
2-¢3.2
I' 21.8 'I 27MAX 3.2 19+0.3
-IT____,rh""12_.5_-I-_~+~: ><.I
I
~r--
1.,I3.5MAX'1
II
l~ I~
r-~ ~ ><
r k:17 r-~~ ~~"

I ~
I=:-:- -
t ¢0.45
-
j i
1 PIN FUNCTION
1 NC
3. 8 _e---I_---==__~ ~ 2 NC
3 NC
PIN 14 4 NC
r 5
6
7
8
9
10
NC
DETECTOR CATHODE
DETECTOR ANODE
LASER CATHODE
11 NC
. 12
13
NC
NC
14 NC
FU-43SLD-2
•. MITSUBISHI
7 - 24 "'ELECTRIC
FU-43SLD-2
1.31..1 m LD Module with Singlemode Fiber Pigtail

Oper a ting current lop CW - 25 45 rnA
Optical output power from fiber end PF CW.IF = lop 0.1 0.2 - mW
Central wavelength AC CW.IF = lop 1270 1300 1330 nm
Spectral width (FWHM) ld CW.IF = lop - 3 - nm
Rise and fall times tr. tr 18 = Ith.lO-90 % (Note 2) - 0.3 - ns
Differential efficiency T/ - - 0.013 - mW/mA
Monitor current Imon CW.IF = lop, VRO = 5V 0.1 0.6 - rnA
Dark current (Photodiode) 10 VRo=5V - 0.1 1 /.lA
Capacitance (Photodiode) Ct VRD = 5V. f = IMHz - 10 - pF
Note 3) E, = MAX 110 • log PF T:S "C)

Type SM -
Jacket dia. 0.9 mm
• MITSUBISHI
. . . . ELECTRIC 7 - 25
FU-43SLD-2
0.3r---------------------------~
Tc=25'C
IF=Iop
.~0.8
~
"0
c:
.s'" 0.6
c:
~ 0.2 ..,'">
~
.... ~ 0.4
a:
E
....e 0.2
O'C
25'C 1290 1295 1300 1305 1310
....:> Wavelength (nm)
Co 65'C
gO.l . light-emission spectrum
]
15.
o 100~-+--+-~~~~~+_~r__+--~--r__+~
90 -- -f-\ -- -- -- -- -- -----
r-~--~_+--+_~--~-4r-~~--~
\.
\
Forward current vs. Optical output power \
10 -- --- -- --- - -- --- -- --\ --
0%~-+--4_--~_+--~--+-_4--_F--+_~
500ps/div
Pulse response
'. MITSUBISHI
7 -26 . . . . ELECTRIC
FU-44SLD-1
1.3 iJ m LD Module with Singlemode Fiber Pigtail
Module type FU-44SLD-i has been developed

for coupling a singlemode optical fiber. and a 1.3.u m
wavelength InGaAsP LD (Laser diode).nie package
is incorporated with dual-in-line pins for electrical
connection.
This module is suitable to light source for use
in high-speed long haul digital optical communication
systems and use in measuring instruments.
FEATURES
• Low threshold current (lOrnA tyP.)
• Built-in thermal electric cooler
• Dual- in - line package
• Diodes are hermetically sealed FU-44SLD-1
ABSOLUTE MAXIMUM RATINGS (TLo=25'C)

Optical output power from CW 3
PF mW
Laser diode fiber end Pulse (Note 1) 6
monitoring Forward Current Im - 2 rnA
Operating case temperature Tc - - 20-65 'C
Storage temperature Tstg - - 40-70 'C
..
Note 1) Pulse condltlOn : Pulse wldth,. IllS. Duty ratlO" 50 %
~
25.4 Fiber
G:d
22.8 25 3.2 19 ±O.3
000000'0-
.2.... - ~ ~
Prl I ------- PIN
1
FUNCTION
COOLER ANODE
K~J t ~M=-;~ ~l
000000, 2 NC
~
-r- 1":j +200
1000 0 3 NC
U
!bP
4 NC
. -------
:1 ~ ~ :-.ho~O.4~;1
D
BOTTOM VIEW 5 LD ANODE, GND
<- 6 NC
0
t
7 PD CATHODE
8 PD ANODE
3.8 15.24
7.62
PD ~ LD
lei 0ij
Thermistor
9
10
11
LD CATHODE
LD ANODE, GND
THERMISTOR
12 THERMISTOR
7
o boo 01-
I
+ 13
14
NC
COOLER CATHODE
BOTTOM VIEW
FU-44SLD-1
. • MITSUBISHI
"ELECTRIC 7 - 27
FU-44SLD-1
1.3 1.1 m LD Module with Singlemode Fiber Pigtail
CHARACTERISTICS (Tc=25 DC, TLo=25 DC, unless otherwise noted)

Threshold current llh CW - 10 30 rnA
Optical output power from fiber end PF CW,IF = lop 1 2 - mW
Spectral bandwidth (RMS) (Note 3) t.A CW,IF = lop - 1.4 - nm
Rise and fall times tr, tf 18 = llh, 10-90 % (Note 2) - 0.3 - ns
Tracking error (Note 4) Er Tc = - 20-65OC, APC, ATC - 0.2 - dB
Differential, efficiency 1/ - - 0.13 - mW/mA
Monitor current Imon CW,IF = lop, VRD = 5V 0.1 0.6 - rnA
Dark current (Photodiode) ID VRD=5V - 0.1 1 /lA
Capacitance (Photodiode) Cl VRD = 5V, f = IMHz - 10 - pF
Note 1) IF . Forward current (LD) Eai (Ai - ~c) 2
Note 2) In : Bias current (LD) ~ote 3) ai : Relative intensity of laser spectral emission modes
Eai ap : Peak of laser spectral emission modes
Note 4) E, = MAX 1 10 • log Pc (~~"C) (ai '" 8p x 0.01)
THERMAL CHARACTERISTICS (TLo=25DC Tc= - 20DC-65°C)

Thermistor resistance Rlh TLD = 250C 9.5 10 10.5 kQ
B constant of thermistor resistance B - - 3250 - K
Cooling capacity t.T Tc=65OC 40 - - OC
Cooler current lpe t.T=40OC - 0.6 1 A
Cooler voltage Vpe t.T=40OC - 1.6 2 V

Items Specifica tions Units
Type SM -
Mode field dia. 10 ± 1 /lm
Cladding dia. 125 ±2 /lm
Jacket dia. 0.9 mm
.',MITSUBISHI
7.- 28 "-ELECTRIC
FU-44SLD-1
1.3 IJ m LD Module with Singlemode Fiber Pigtail
TlO=25"C TLD=25'C
JF=lop
>- 1
.'=
en
ai 0.8
E
.- 0.6
Q)
>
.~ 0.4
~ 0.2
°I L29-0~1,L295......l.ltlJJ130lLJOWLUl!l!\30~5--13LIO~.,.,J1315
Wavelength (nm)
:; IB=lth
0. 100
:;
o ;: 90 - -- -~"""""- - - - - ---
'ecn I
"iii
;!l
"
';' .S 1,/ 1\
a If
Q)
1'\
.'"
>
C\l \
~ 10 - - - -- ---- - -\ -- "--
00/00
30 40 50
Forward current (mA) 500ps/div
Forward current vs. Optical output power Pulse response
• ,MITSUBISHI
FU-44SLD-7
Module type FU - 44SLD-7 has. been developed

This module is suitable to light source for use in
high - speed long haul digital optical communi-
cation systems and use in measuring instruments.
FEATURES
• Built - in thermal electric cooler
• With photo diode lor optical output monitor
FU-44SLD-7
ABSOLUTE MAXIMUM RATINGS (TLD=25°e)
Optical output power from CW 4.8
PF mW
fiber end Pulse (Note 1) 11
Laser diode
Forward Current 1FL Pulse (Note 1) 270 rnA
monitoring Forward Current 1FD - 2 rnA
Opera ting case temperature Tc - - 20-65 "C
Note 1) Pulse condition: Pulse width'" 1115. Duty ratio'" 1 %
PIN FUNCTION
1 COOLER ANODE
2 NC
3 NC
4 NC
5 LD ANODE, GND
6 NC
7 PD CATHODE
~0.45
U
8 PD ANODE
2.54 9 LD CATHODE
3.8 15.24 10 LD ANODE, GND
7.62 11 THERMISTOR
PIN 14 12 THERMISTOR
Fiber 13 NC
0000000
/ 14 COOLER CATHODE
1000 +200
o
BOTTOM VIEW
FU-44SLD-7
BOTTOM VIEW
• MITSUBISH.I
FU-44SLD-7
CHARACTERISTICS (Tc=25 "C, TLo=25 ee, unless otherwise noted)

Threshold current Ilh CW - 10 30 mA
Operating current lop

CW - 45 90
mA
Pulse (Note 1) - 80 250
CW.IF = lop 2 3.6 -
Optical output power from fiber end PF mW
Pulse (Note 1) 10 - -
Rise and fall times tr, tf IB = Ilh, 10-90 % (Note 3) - 0.3 - ns
Tracking error (Note 4) Er Tc = - 20-65'C, APC,ATC - 0.2 - dB
Differen tial efficiency TJ - - 0.11 - mW/mA
Monitor current Imon CW,IF = lop, VRO = 5V 0.2 1.2 - mA
Dark current (Photodiode) Io VRo=5V - 0.1 1 /LA
Capacitance (Photodiode) Ct VRO = 5V, f = 1MHz - 10 - pF
Note 1) Pulse condition: Pulse width", 4ps, Duty ratio'" 1 %
Note 3) IB : Bias current (LD)
Note 4) Er = MAX 1 10 'log PC' (~~ 'C)
THERMAL CHARACTERISTICS (TLo=25°C, Tc= - 20°C_65°C)

Thermistor resistance Rlh TLD = 25'C 9.5 10 10.5 kQ
Cooling capacity AT Tc = 65'C 40 - - 'C
Cooler current lpe AT =40'C - 0.6 1 A
Cooler voltage Vpe AT =40'C - 1.6 2 V

Type SM -
Mode field dia. 10 ± 1 /Lm
Cladding dia. 125 ±2 /Lm
Jacket dia. 0.9 mm
6.MITSUBISHI
...... ELECTRIC 7 - 31
FU-44SLD-7
1.3 iJ m LD Module with Singlemode Fiber Pigtail
TLO=25'C
IF~Iop
3 3
.~ 0.8
-5 en
C
-0
C
'" .~ 0.6
Iii
.0 .,'"
.> 0.4
*'E Z
.!!!
~
e
.....
I~
0.2
If\~
Iii
::0 0
0. 1290 1295 1300 1305 1310 1315
:; Wavelength (nm)
0.
:; Light-emission spectrum
0
"iii
'E-"
o
60 80 100
• MITSUBISHI
FU-4SSLD
1.3 ~ m LD Module with Singlemode Fiber Pigtail·
Module type FU - 45SLD has been developed

L3f,lm wavelength InGaAsP LD (Laser diode).
The package is incorporated with butterfly
in high-speed long ·hat4 digital optical communication
systems.
FEATURES
• Emission wavelength is in 1.3f,lm band
• Butterfly package
• Diodes are hermetically sealed FU-45SLD
ABSOLUTE MAXIMUM RATINGS (TLD=25 "C)

PF mW
monitoring Forward Current IFD - 2 mA
Operating case temperature Tc - -20-65 "C
Storage temperature Tstg - -40"':"70 "C
Note 1) Pulse condition: Pulse width .. IllS. Duty ratio::;; 50 %
30
2 26+0.2
3.85 22.3 25
Thermistor Fiber
7.38
L, n n 1~
/.O::-r-;uHi--tI-!g~I-!HI EO~t~ol
[jIN
1
FUNCTION
COOLER ANODE
,.'F
2 THERMISTOR
PO
O Case ,.
=--YHI-+fHl+9-f-~O~
LD ~ J J 3
4
5
PDANODE
PD CATHODE
THERMISTOR. GND
. S 14 L 1000+~oo I--';-~+':~:;'~---------i
TOP VIEW f--i:-8+7.N~C- ' - - - - - - - - 1
9 NC
10 LD ANODE. GND
11 LD CATHODE
12 NC
13 GND
14 COOLER CATHODE
FU-45SLD
• MITSUBISHI
"'ELECTRIC 7-33
FU-45SLD
1.31-1 m LD Module with Singlemode Fiber Pigtail
CHARACTERISTICS (Tc=25 CC, TLD=25 ce, unless otherwise noted)

Threshold current lth CW - 10 30 rnA
Operating voltage Vop CWo IF = lop (Note 1) - i.2 1.6 V
Spectral bandwidth (RMS) (Note 3) LU CW.IF = lop - 1.4 - nm
Rise and fall times tr. tf 16 = lth. 10-90 % (Note 2) - 0.3 - ns
Tracking error (Note 4) Er Tc = - 20-65 'C. APC. ATC - 0.2 - dB
Differential efficiency T/ - - 0.13 - mW/mA
Monitor current Imon CWo IF = lop. VRD = 5V 0.1 0.6 - rnA
Dark current (Photodiode) 10 VRo=5V - 0.1 1 pA
Note 1) IF : Forward current (LD) ai : Relative intensity of laser spectral emission modes
~ai (Ai- ~c) 2
Note 2) In : Bias current (LD) Note 3) 6'<= aD : Peak of laser spectral emission modes
~ai
PF (al" aD x 0.01)
Note 4) E, = MAX I 10· log --:P=--F--c(-==25::-;;'C::C):---
THERMAL CHARACTERISTICS (TLD=25 CC, Tc= - 20°C_65°C)

Thermistor resistance Rth TLD = 25'C 9.5 10 10.5 kQ
Cooling capacity L'..T Tc = 65'C 40 - - 'C
Cooler current lpe L'..T=40'C - 0.6 1 A
Cooler voltage Vpe L'..T =40'C - 1.6 2 V

Type SM -
Mode field dia. 10 ± 1 pm
Cladding dia. 125 ±2 pm
Jacket dia. 0.9 mm
• MITSUBISHI
7-34 . . . . ELECTRIC
FU-45SLD
TLO=25"C
iF=iop
>-
.1:
~ $'"c: 0.8
.5
-5 CD
0.6
"0 2 >.
c:
~
0.4
CD
~
.8;;::: 0.2
E a
1290 1295 1300 1305 1310 1315
.g Wavelength (nm)
~
0.
Is=Jth
S0.
--/ '"-
100
S ~ 9O· - - - - - - - -
'iii
0
~
I
~ .5 J 1
~
0 ...,~ I \
OJ
\
~ - - - --- - -\ -- --
, -
00 10
30 40 50 091
500ps/dlv
Pulse response
• MITSUBISHI
"'ELECTRIC 7-35
FU-64SLD-1
Module type FU - 64SLD -1 has been developed

1.55,um wavelength InGaAsP LD (Laser diode).
FEATURES
• Emission wavelength is in 1.55,um band
• Low threshold current C14mA typ.)
• Diodes are hermetically sealed FU·64SLD·l
ABSOLUTE MAXIMUM RATINGS (TLo=25"C)

PF mW
Laser diode fiber end Pulse (Note 1) 4.8
Operating case temperature Tc - - 20-65 "C
Storage temperature Tstg - - 40-70 'C
)late 1) Pulse condltlOn: Pulse wldth s: IllS, Duty rat to '" 50 %
25 4 PIN 14 Fiber
22.8 25 3.2 19 ±0.3 ~
Gy:
0000000
PH I ------- PIN FUNCTION
~l t
~J ~~~ ~l ~
0000
0'
0
1000
+200
0
1
2
3
COOLER ANODE
NC
NC
2-~3.2
U~0.4~iT"'
IT.: a
BOTTOM VIEW
8
4
5
6
7
NC
LO ANODE, GND
NC
tLPIeY
PO CATHODE
8 PO ANODE
w PD ~
1: o
LD Thermistor
0 0
°11-
Of- +
9
10
11
12
13
LD CATHODE
LD ANODE, GND
THERMISTOR
THERMISTOR
NC
7 1
14 COOLER CATHODE
BOTTOM VIEW
FU·64SLD·l
• MITSUBISHI
7- 36 . . . . ELECTRIC
FU-64SLD-1
1.551-1 m LO Module with Singlemode Fiber Pigtail
CHARACTERISTICS (Tc=25°C, TLo=25°C, unless otherwise noted)

Th~eshold current Ith CW - 14 35 rnA
Operating voltage Vop CW.lF = lop (Note 1) - 1.2 1.7 V
Optical output power from fiber end PF CW.IF = lop 1 1.5 - mW
Spectral bandwidth (RMS) (Note 3) DoA CW.IF = lop - 2.2 - nm
Rise and fall times tr. tf 18 = Ith.1O-90 % (Note 2) - 0.3 - ns
Tracking error (Note 4) Er Tc = - 20-65 "C. APC. ATC - 0.2 - dB
Differential efficiency 1/ - - 0.06 - mW/mA
Monitor current lmon CW.lF = lop, VRO = 5V 0.1 0.6 - rnA
Dark current (Photodiode) 10 VRo=5V - 0.1 1 /.lA
Capacitance (Photodiode) Ct VRO = 5V. f = IMHz - 10 - pF
Note 1) IF . Forward current (LD)
Note 2) Is: Bias current (LD) Note 3) I:J. A = j EaI (AI - Ac) 2
Eai
81. Relatlve IntensIty of laser spectral emISSIon modes
ap : Peak of laser spectral emission modes
Note 4) Er = MAX 110 • log Pi' ~ 'C) (ai", ap X 0.01)
THERMAL CHARACTERISTICS (TLo=25°C, Tc= - 20°C_65°C)

Thermistor resistance Rth Tw = 25"C 9.5 10 10.5 kQ
Cooling capacity DoT Tc = 65"C 40 - - "C
Cooler current lpe DoT = 4O"C - 0.6 1 A
Cooler voltage Vpe DoT =40"C - 1.6 2 V

Type SM -
Jacket dia. 0.9 mm
• .MITSUBISHI
.... ELECTRIC 7-37
FU-64SLD-1
1.55 1..1 m LD Module with Singlemode Fiber Pigtail
2.0,--------------, TLO",,25"C
TLD=25"C IF=lop
~
.~ 0.8
3 .S'" 0.6
5 1.5 ~
.~ 0.4
"0
&!'"
c:
'Q;" 0.2
.0
;;::
015" "30"--'1d
540"""'ll.!.!;115""'50 1560 1570 1580
E 1.0 Wavelength (nm)
.g Light-emission spectrum
Q;
;:
0 Is=lth
c. 100 h.
....:J 90 -~ -- -- - --'
C. ~
0.5 .iii
S0 c: I
rou '"
.~ II
0E. IT
0
'"
>
'g
Q)
a:
\
10 - -- - - -- --r- -\
60 80 100 0%

500ps/div
. ' MITSUBISHI
7 -38 . . . . ELECTRIC
FU-64SLD-7
Module type FU - 64SLD-7 has been developed

1.55tLm wavelength InGaAsP LD (Laser diode).
FEATURES
• Emission wavelength is in 1.55tLm band
• With photodiodes for optical output monitor FU·64SLD·7
ABSOLUTE MAXIMUM RATINGS (TLo=25°C)

PF mW
fiber end Pulse (Note 1) 15
Laser diode
Forward Current 1FL Pulse (Note 1) 400 rnA
Note 1) Pulse conditlOn : Pulse wIdth;;; 4/ls, Duty ratio;;; 1 %
OUTLINE DRAWINGS Unit (mm) .
~
25.4 Fiber
22.8 25 3.2 19 ±0.3
L
rs :
000000'0
..2-_ ---~ ~ PIN FUNCTION
DOOOOOi'IGTj
~
1
2
COOLER ANODE
NC
IT T:j +200
J
1000 0 3 NC
4 NC
I 2-n2
BOTTOM VIEW 5
6
7
LD ANODE. GND
NC
PD CATHODE
2.54 8 PD ANODE
3.8 15.24 . 9 LD CATHODE
10 LD ANODE. GND
11 THERMISTOR
12 THERMISTOR
13 NC
14 COOLER CATHODE
BOTTOM VIEW
FU-64SLD·7
• MITSUBISHI
..... ELECTRIC 7 - 39
FU-64SLD-7
1.55 IJ m LD Module with Singlemode Fiber Pigtail
CHARACTERISTICS (Tc=25 °C, TLo=25 °C, unless otherwise noted)

Threshold current lth CW - 15 35 rnA
CW - 55 90
Operating current lop rnA
Pulse (Note 1) - - 380
Operating voltage Vap CWo IF = lop (Note 2) - 1.2 1.7 V
CW.IF = lop 2 3.6 -
Optical output power from fiber end PF mW
Pulse (Note 1) 10 - -
Rise and fall times tr, tf IB = Ith, 10-90 % (Note 3) - 0.3 - ns
Tracking error (Note 4) Er Tc = - 20-65 'C. APC,A TC - 0.2 - dB
Differential efficiency 1} - - 0.1 - mW/mA
Monitor current Iman CWo IF = lop. VRO = 5V 0.1 0.4 - rnA
Dark current (Photodiode) 10 VRo=5V - 0.1 1 Il A
Note 1) Pulse cond,tlOn : Pulse wIdth,. 41ls, Duty raho,. 1 %
PF
Note 4) Er = MAX I10 ·log PF (25"C)
THERMAL CHARACTERISTICS (TLo=25 °C, Tc= - 20°C_65°C)

Thermistor resistance Rlh TLD= 25'C 9.5 10 10.5 kQ
Cooling capacity L'iT Tc=65'C 40 - - 'C
Cooler current lpe L'iT = 4O'C - 0.6 1 A
Cooler voltage Vpe L'iT = 40'C - 1.6 2 V

Type SM -
Mode field dia. 10 ± 1 pm

Jacket dia. 0.9 mm
• MITSUBISHI
1- 40 . . . . ELECTRIC
FU-64SLD-7
1.55 \.l. m LD Module with Singlemode Fiber Pigtail
TLD=25'C
IF= lop
~
~ 3 'iii
c: 0.8
5 '"
.~
"tl
c: 0.6
'"
1ii
'.'>",
.!)
;;::
'"
Q)
0: 0.4
E
.g 0.2
~
OJ
s:
0 0
c. 1530 1540 1560 , 1570 1580
s Wavelength (nm)
e:;)
0 light-emission spectrum
ro()
'-g
0
00 60 80 100
• . MITSUBISHI
..... ELECTRIC 7 - 41
FU-41SDF, FU-44SDF
1.31..1 m DFB-LD Module with Singlemode Fiber Pigtail
Module type FU-41SDF and FU-44SDF have

been developed for coupling a singlemode optical
fiber and a 1.3#m wavelength InGaAsP DFB LD
(Laser diode).
They are suitable to light source for use in
long haul and high capacity optical fiber
FEATURES
• Distributed Feedback (DFB) Laser diode
• Emission wavelength is in 1.3 #m band
• Dual-in-line package (FU-41SDF)
• Butterfly package (FU - 44SDF)
• With photo diodes for optical output monitor
ABSOLUTE MAXIMUM RATINGS (TLD= 2SoC)

Ratings
FU-41SDF FU-44SDF
PF CW 2.5 2.5 mW
Operating case temperature Tc - -20-65 - 20-65 "C
Storage temperature Tstg - -40-70 - 40-70 "C
25.4
10 LD ANODE, GNO
11 THERMISTOR
pIN FUNCTIoN
12 THERMISTOR
1 COOLER ANODE
13 NC
PIN 14 Fiber .... 2 THERMISTOR
14 COOLER CATHODE
o:Jo~ I
~~
-1--
lOoo+~ool
-
PD ~
"-
1I h Ie1 °iJ1
8
1IT Thermistor
TOP VIEW 7
8
NC
NC
BOTTOM ViEW
7
o 1: 0 0 01--
1
+
9
10
NC
LD ANODE, GND
11 LD CATHODE
BOTTOM VIEW 12 NC
13 GND
14 COOLER CATHODE
FU-41SDF FU-44SDF
.•. ·MITSUBISHI
7-42 . . . . ELECTRIC
FU-41 SDF, FU-44SDF
1.3 iJ m DFB-LD Module with Singlemode Fiber Pigtail
CHARACTERISTICS (Te=25 °C, TLo=25 °C, unless otherwise noted)

FU-41SDF FU-44SDF
Threshold current lth CW - 15 40 - 15 40 rnA
Operaitng voltage Vop CW.IF = lop (Note 1) - 1.2 1.6 - 1.2 1.6 V
PF CW.IF = lop 1 1.5 - 1 1.5 - mW
fiber end
Central wavelength AC CW.IF = lop 1290 1310 1330 1290 1310 1330 nm
Side mode suppression ratio Sr CW.IF = lop 30 35 - 30 35 - dB
Rise and fall times tr. tf Is = lth. 10-90 % (Note 2) - 0.3 - - 0.3 - ns
Tracking error (Note 3) Er Tc = - 20-65 'C. APC. ATC - 0.2 - - 0.2 - dB
Differential efficiency 1/ - - 0.09 - - 0.09 - mW/mA
Monitor current lmon CWo IF = lop, VRD = 5V 0.1 0.6 - 0.1 0.6 - rnA
Dark current (Photodiode) ID VRD=5V - 0.1 1 - 0.1 1 /.LA
Capacitance (Photodiode) Ct VRD = 5V.f = 1MHz - 10 - - 10 - pF
Note 2) In : Bias current (LD)
Note 3) E, = MAX 110 . log PF
PF (25"C)
THERMAL CHARACTERISTICS (TLo=25°C, Te= - 20°C-+65°C)

FU-41SDF FU-44SDF
Thermistor resistance Rth TLD = 25'C 9.5 10 10.5 9.5 10 10.5 kQ
B constant of thermistor resistancE B - - 3250 - - 3250 - K
Cooling capacity Ll.T Tc=65'C 40 - - 40 - - 'C
Cooler current lpe Ll.T=40'C - 0.6 1 - 0.6 1 A
Cooler voltage Vpe Ll.T=40'C - 1.5 2 - 1.5 2 V

Type SM -
Modefield dia. 10 ± 1 /.Lm
Jacket dia. 0.9 mm
. • MITSUBISHI
.... ELECTRIC 7-43
FU-41 SDF, FU-44SDF
1.31J m DFB-LD Module with Singlemode Fiber Pigtail
3r-----~-------------------. @ 10r---------------------~
TLO=25"C ;s TLO=2S·C
IF=lop
~. cw
8.
'5
Co -30
~
]
~ 15.
\A
",
o
-5 2
.~
~
-70
~ 1·~30~0--------~1+.31~0--------~13W·
Q. Wavelength (nm)
SQ. Light-emission spectrum
S0
-.;
0
lOa f-+--+--II--r--.~"""~-I--.-I-IB+-~_Ith+--1
.~
0
.~ 90 1--+--f--f.I-+---+---.:r-----f--+-+-+---I
.~ \
.~
j \
10 -- ---- -- --
0%
-- - -\--
o~~~~--~----~--~~--~.
o 40 60 80 100
500ps/div
Forward current vs. optical output power Pulse response
(FU-41SDF)
• MITSUBISHI
7-44 "ELECTRIC.
FU-45SDF-38
(CATV Application)
1.31.1 m DFB-LD Module with Singlemode Fiber Pigtail
Module type FU-45SDF-38 has been developed

for coupling a single - mode optical fiber and
a 1.3#m wavelength InGaAsP LD (Laser diode).
The module is suitable to light source for use
in multi-channel long haul AM CATV systems.
FEATURES
• Distributed Feedback (DFB) L'aser diode
• Excellent linearity
• Emission wavelength is in 1.3#m band
• Built - in optical isolator
• Built- in thermal electric cooler
• Butterfly package FU-45SDF-38
• With photodiodes for optical output monitor
ABSOLUTE MAXIMUM RATINGS (TLD=25°C)

PF CW 15 mW
fiber end
Laser diode
Forward Current IF CW 150 rnA
monitoring Forward Current IFO - 2 rnA
OUTLINE DRAWINGS Unit. (mm)

PIN FUNCTION
7.38 15.24 1 COOLER ANODE
2 THERt,1ISTOR
~541 PIN 1 3 PD ANODE
.----:-:13,---+.::-:51-n_~ ~ III ~ 2.6 5

4 PD CATHODE
GND
ToHH" .. 6
7
NC
NC
8 NC
9 NC
10 GND
<D
!IH ~ IH~ ~~
os:i
21
11
12
LD CATHODE
NC
~
13 LD ANODE. GND
6.1 I .8 35 14 COOLER CATHODE
4.6 20.8 1000~2<l8

2 26 + 0.3
;, n
30
4)4 lfQI
'-+-+""~ !P I =
J, LD
t .~c=J
..
~!~4PI"""'It;--.+~. ~t
Caae
8 14 I- looo+fO
~I ~ . . FU-45SDF-38
TOP VIEW
• MITSUBISHI
..... ELECTRIC 7-45
FU-45SDF-38
(CATV Application)
1.3 J..l m DFB-LD Module with Singlemode Fiber Pigtail
CHARACTERISTICS (Tc=25 CC, TLo=25 CC, unless otherwise noted)

Operating voltage Vop CW.IF=lop (Note 1) - 1.3 1.8 V
Light- Emission central wavelength .l.c CW.IF = lop 1290 1310 1330 nm
Side mode suppression ratio Sr CW.IF = lop 30 35 - dB
Cutoff frequency (- 1.5dB) fc IF = lop 2 - - GHz
79 channel test (Note 2) (Note 3)
CS02 CS02 ; f=54MHz - -.57 -50
Composite second order CSOL41 CSOL41 ; f = 324MHz - -57 -50 dBc
CSOH41 CSOH41; f = 326.5MHz - -64 -55
CS078 CS078 ; f = 548.5MHz - -55 -50
(Note 3)
CTB2 CTB2 ; f = 55.25MHz -63 -53
Composite triple beat dBc
CTB41 CTB41 ; f = 325.25MHz -60 -50
CTB78 CTB78 ; f = 547.25MHz - -61 -51
CW.IF = lop
Relative intensity noise (Note 4) Nr2 Nr2 ; f = 55.25MHz - -160 -155 dB/Hz
Nr78 Nr78 ; f = 547.25MHz -157 -152 dB/Hz
Tracking error (Note 5) Er TC = - 20-65 'C. APC. ATC - 0.3 - dB
Differential efficiency 1/ - 0.08 0.17 0.35 mW/mA
Monitor current Imon CWo IF = lop. VRD = 5V 0.2 - - rnA
Dark current (PD) Io VRD=5V - 0.1 1 IJ.A
Capacitance (PD) Ct VRD = 5V. f = 1MHz - 10 - pF
Note 1) IF : LD forward current
Note 2) 79 channel test: Distortion performances are tested under 79 channel loading.
Channel frequency ; 55.25-547.25MHz (6MHz spacing)
Optical modulation depth; m = 0.035/ ch
If (average) = lop
Rmodule > 40dB
Rmodule : Optical return loss from fiber to LD module
Rmodule = - lO .
log PFR
PF
where PFR: Reflected optical power to LD module
Note 3) Typical values are no more than the reference values. Please contact Mitsubishi Electric for any specific requirements.
Note 4) Relative intensity noise does not include shot noise of rec~iver.
Note 5) E, = MAX IlO . log PF

PF (25 'C)
I
THERMAL CHARACTERISTICS (TLo=25 CC, Tc= - 20-65 OC)

Thermistor resistance Rth TLD =25'C 9.5 10 10.5 kQ
Cooling capacity ~T Tc=65'C 40 - - 'C
Cooler current Ipe ~T = 4O'C - 0.6 1 A
Cooler voltage Vpe ~T = 4O'C - 1.2 2 V
. '.. MITSUBISHI
7-46 .... ELECTRIC
FU-4SSDF-38
(CATV Application)

Items Specifications uriits
Type SM -
Mode- field dia. 1O± 1 tlm
Cladding dia. 125±2 tlm
Jacket dia. 0.9 mm
EXAMPLE OF CHARACTERISTICS $ 10r---------------------------~

3 TLO=25'C
10r---------------------------~ iF=iop
Tc=25'C
TLD=25'C
t cw
~
8 ~. -30
~ ~
,5 15.
o
~ ~ ~
~
0
c.
.~ -70L-__________~~----------~~
...'5c.
:J
4
1305 1310 1315
Wavelength (nm)
0
~ LIght-emission spectrum
15.
0
2 -50
79 channel test
O~~~~---±----~----~----~. -55
o 60 80 100
Forward current (rnA) S
3
Forward current vs. optical output power
CD
l-
-60
e..>
c5 CTB41
CIl
e..>
-65
-70 L-__--L____---l.,,--L__....,L,------!
2.5 3 3.5 4 4.5 5
Optical modulation depth (%)
Distortion vs. optical modulation depth
" MITSUBlSH,I
"'-ELECTRIC 7-47
FU-45SDF-4
(Digital Application)
1,31..1 m DFB-LD Module with Singlemode Fiber Pigtail

1.3,um wavelength InGaAsP DFB- LD.
in high capacity long haul digital optical
FEATURES
• Built - in. optical isolator
• Butterfly package FU-45SDF-4
• Diodes and T.E cooler are hermetically sealed

PF CW 4 mW
Laser diode. fiber end
Operating case temperature Tc - - 20-65 °C
Storage temperature Tstg - -40-70 °C
7.38 15.24 PIN 1
-.----[--+----i,T
254
I PIN FUNCTION
1 'COOLER ANODE
2 THERMISTOR
~6 2-¢2.1 3 PD ANODE
4 PD CATHODE
i 5 GND
~I;~ 7
8
6 NC
NC
NC
9 NC
10 GND
11 LD CATHODE
12 NC
13 LD ANODE, GND
14 COOLER CATHODE
FU-45SDF-4
. • MITSUBISHI
7-48 . . . . ELECTRIC
FU-45SDF-4
(Digital Application)
1.3 ~ mDFB-LD Module with Singlemode Fiber Pigtail
CHARACTERISTICS (Tc=25 °C, TLD=25 °C, unless otherwise noted)

Light-emission central wavelength AC CW.IF= lop 1290 1310 1330 nm
2.5G bps NRZ
Mark ratio 50 %
Spectral width (- 20dB full width) Co), IF peak = lop - 0.7 - nm
Extinction ratio 8 %
Rmodule > 40dB (Note 2)
Side mode suppression ratio Sr . CW.lF = lop 30 35 - dB
Cutoff frequency (- 1.5dB) fe IF = lop 3 - - GHz
2.5G· bps NRZ
Mark ratio 50 %
Rise and Fall time (10-90 %) tr. tf IF peak = lop - - 200 ps
Rmodule >40dB (Note 2)
Relative intensity noise Nr CW.lF= lop - -155 -145 dB/Hz
Differential efficiency 1/ - 0.02 0.06 0.2 mW/rnA
Monitor current Imon CWo IF = lop, VRD = 5V 0.2 - - rnA
Dark current (PD) ID VRD=5V - 0.1 1 pA
Capacitance (PD) . Ct VRD = 5V. f = 1MHz - 10 - pF
Note 1) IF' LD forward current
Note 2) Rmodule : Optical return loss from fiber to LD module
Rmodule = - 10 • log ~
Where PFR: Reflected optical power to LD module.
Note 3) E, = maxi 10 • log Pr
PF (25"C)
I
THERMAL CHARACTERISTICS (TLD=25 ee, Tc= - 20-65°C)
Parameters Symbols Conditions Min. Typ. Max. Units
Thermistor resistance Rth TLD = 25"C 9.5 10 10.5 kQ
B Constant of thermistor resistance B - - 3950 - K
Cooling Capacity CoT Tc = 65"C 40 - - "C
Cooler Current lpe CoT = 4O"C - 0.6 1 A
Cooler Voltage Vpe CoT = 4O"C - 1.2 2 V

Items SpecifiCations Units
Type SM -
Mode-field dia. 1O± 1 pm
Cladding dia. 125±2 pm
Jacket dia. 0.9 mm
• MlTSUBlSHI
.... ELECTRIC 7-49
FU-45SDF-4
(Digital"Application)
1.31..l m DFB-LD Module with Singlemode Fiber Pigtail
ttl Dr------;;.---------,
Tc=25°C
;s 2.5Gbps NRZ
TLD=25°C
1
~ -20
o
.~
'5 .i
Co t/. -40 1309 1310 1311
'5
o Wavelength (nm)
~ Light-emission spectrum
.E-
o
°O~~2~O--4*O-~60~~8~O--1~OO
!=orward current vs. optical output power
200ps/div
Pulse response characteristics
'.. MITSUBISHI
7-50 .... ELECTRIC,
FU-48SDF-1
(for 2.5Gbps Digital Application)
DFB-LD Module with Single-mode Fiber Pigtail
Module type FU-48SDF-l is a 1.31#m DFB-

LD module with single-mode optical fiber. This
product is based on FU - 45SDF - 4 and has
improvement on high speed modulation charac-
teristics by separating LD bias pin from RF input
pin. It also has a RF termination circuit to match
to characteristic impedance of LD drive signal.
MAIN FEATURES
• Input impedance is 25 g
• Distributed Feedback (DFB) Laser diode module
• Single-mode optical fiber pig-tail
• Emission wavelength is in 1.31#m band
• Built-in optical isolator
FU-48SDF-1
ABSOLUTE MAXIMUM RATINGS (TLD=25°C)

PF CW 4 mW
fiber end
Laser diode
Forward current IF CW 150 rnA
monitoring Forward 'Current IFD - 2 rnA
OUTLINE DRAWINGS Unit (mm) PIN FUNCTION

1 THERMISTOR
2 THERMISTOR
3 LD BIAS( )
PIN 1 4 PO ANODE
5 PO CATHODE
6 COOLER ANODE
Fiber 7 COOLER CATHODE
8 GND
9 GND
10 NC
11 LD ANODE,GND
12 LD RF
13 LD ANODE,GND
6.1 17.8 14 NC
4.6 . 20.8
26±O.3
30
FU-48SDF-1
7-51
FU-48SDF-1
CHARACTERISTICS (Tc=25°C, TLo=25°C, unless otherwise noted)

Input impedance Zin IF = lop - 25 - Q
Optical output power· from fiber end PF CW.IF = lop 2 3.5 - mW

Light- emission central wavelength I.e CW.IF = lop 1290 1310 1330 nm
2.5G bps NRZ
Mark ratio 50 %
Spectral width (- 20dB full width) td IF peak = lop - 0.4 - nm
Cutoff frequency (- 1.5dB) fc IF = lop 3.5 - - GHz
2.5G bps NRZ
Mark ratio 50 %
Rise and Fall time (l0-90 %) tr. tf IF peak = lop - - 150 ps
Rmodule >40dB (Note 2)
Relative intensity noise Nr CWo IF = lop - -155 -145 dB/Hz
Differential efficiency TJ - 0.05 0.11 0.25 mW/mA
Monitor current Imon CWo IF = lop. VRO = 5V 0.1 - - rnA
Dark current (PD) 10 VRo=5V - 0.1 1 fJ.A
Capacitance (PD) Ct VRO = 5V. f = 1MHz - 10 - pF
PF
Where Pm : Reflected optical power to LD module.
Note 3) Er = maxi 10 • log PF
PF (25"C)
I
THERMAL CHARACTERISTICS (TLo=25° C, Tc= - 20_65° C)
Thermistor resistance Rth Tw = 25"C 9.5 10 10.5 kQ
Cooling Capacity ~T Tc =65"C 40 - - "C
Cooler Current lpe ~T=40"C - 0.6 1 A
Cooler Voltage Vpc ~T=40"C - 1.2 2 V

Type SM -
Mode-field dia. 10 ± 1 fJ.m
Cladding dia. 125 ±2 fJ.m
Jacket dia. 0.9 mm
• MITSUBISHI
7 - 52 . . . . ELECTRIC
·FU-48SDF-1
in 0,----------...---------,
Tc=25"C :s 2. 5Gbps NRZ
TLD=25"C
~ 2
j
8. ~
E.
i
o
o -40 L-.,c.._ _ _-l.,----_~_ __:_::'.
1309 1310
Wavelength (nm)
1311
I L1ght-emlsslon spectrum
°O~~~-7.40~~6~O-~OO~~100·
,Forward current vs. optical output power
jtl. 10 ____ _
0%
200ps/div
• MrTSUBISHI
.... ELECTRIC 7-53
FU-61 SDF ,FU-64SDF
1.551-1 m DFB-LD Module with Singlemode Fiber Pigtail
Module type FU-61SDF and FU-64SDF have

been developed for coupling a singlemode optical
fiber and a 1.55.um wavelength InGaAsP DFB
LD (Laser diode).
They. are suitable to light source for use in long
haul and high capacity optical fiber communication
systems.
FEATURES
• Distributed Feedback (DFB) Lase.r diode
• Dual-in-line package (FU-61SDF)
• Butterfly package (FU - 64SDF)

Ratings
FU-61SDF FU-64SDF
PF CW 2.5 2.5 mW
Operating case temperature Tc - - 20-65 - 20-65 "C
Storage temperature Tstg - -40-70 - 40-70 "C
3.85
7.38
fUNCTION
COOLER ANODE
NC
pIN
1
2
°ii
3
4
U 14 5
f
~ h '" Thermistor ~ -
6
7
8
NC
NC
9 NC
O~
10 LO ANODE GND
o 1; 0 0 1+ 11
12
LD CATHODE
NC
13 GND
BOTTOM VIEW .
14 COOLER CATHODE
FU-61SDF FU-64SDF
• MITSUBISHI
7 - 54 "ELECTRIC
FU-61 SDF,FU-64SDF
1.55 ~ m DFB-LD Module with Singlemode Fiber Pigtail
CHARACTERISTICS (Tc=25°C, TLD=25°C, unless otherwise noted)

FU-61SDF FU-64SDF
Operating voltage Vap CW.IF = lop (Note 1) - 1.2 1.6 - 1.2 1.6 V
Optical output power from - 1 - mW
PF CW.IF= lop 1 1.5 1.5
fiber end
Central wavelength AC CW.lF = lop 1530 1550 1570 1530 1550 1570 nm
Side mode suppression ratio Sr CW.IF = lop 30 35 - 30 35 - dB
Rise and fall times tr. tf 18 = Ith. 10-90 % (Note 2) - 0.3 - - 0.3 - ns
Tracking error (Note 3) Er Tc = - 20-65 "C. APC. ATC - 0.2 - - 0.2 - dB
Differential efficiency TJ - - 0.08 - - 0.08 - mW/mA
Monitor current Imon CWo IF = lop, VRO = 5V 0.1 0.5 - 0.1 0.5 - rnA
Dark current (Photodiode) 10 VRD=5V - 0.1 1 - 0.1 1 fJ.A
Capacitance (Photodiode) Ct VRO = 5V. f = 1MHz - 10 - - 10 - pF
Note 2) IB: Bias current (LD)
Note 3) Er=MAXjlO'10 i PF ~"C)
THERMAL CHARACTERISTICS (TLD=25°C, Tc= - 20°C~+65°C)
FU-61SDF FU-64SDF
Thermistor resistance Rth TLO = 25"C 9.5 10 10.5 9.5 10 10.5 kQ
B constant of thermistor resistance B - - 3250 - - 3250 - K
Cooling capacity llT Tc = 65"C 40 - - 40 - - "C
Cooler current Ipe II T = 40"C - 0.6 1 - 0.6 1 A
Cooler voltage Vpe llT = 4O"C - 1.5 2 - 1.5 2 V

Type SM -
Mode-field dia. 10± 1 fJ.m
Jacket dia. 0.9 mm
• MITSUBISHI
.... ELECTRIC 7-55
FU-61 SDF,FU-64SDF
3r----------------, 10,..--------------,
TLD = 25"C til Teo = 25'C
:s IF-lop
I'5
cw
9- -30
5
~
c;
o
!'I
~
fP. -70 '-------...,-,1------~
1540 1550 1560
....:J Wavelength (nm)
S:J Light-emission spectrum
o
C6
.~ 1 r-. ~
is=Ith
o 00 - -- --/ - -- - - -- - -
90
,\
f T
\
10-
%
-- - - -- - - r-\; - --
O~O--------2~O~--4~O---6~O--~8~O--~lOO
I
Forward current (rnA) 500ps/div
Forward current vs. optical output power Pulse response
(FU-61SDF)
• MITSUBISHI
7 - 56 "ELECTRIC
FU-65SDF-3
(Analog Application)
1.551.l m DFB-LD Module with Singlemode Fiber Pigtail

1.55ttm wavelength InGaAsP LD (Laser diode).
in high capacity long haul analog optical
FEATURES
• Emission wavelength is in 1.55ttm band
• Built-in optical isolator
FU-65SDF-3
ABSOLUTE MAXIMUM RATINGS (TLo=25"C)

PF CW 10 mW
fiber end
Laser diode
Forward Current IF CW 150 rnA
Opera ting case temperature Tc - - 20-65 "C
Storage temperature Tstg - - 40-70 "C
7.38 15.24 PIN 1

-~ PIN
1
FUNCTION
COOLER ANODE
2 THERMISTOR
3 PD ANODE
r:-
Fiber 4 PD CATHODE
5 GND
6 NC
7 NC
8
~1
NC
9 NC
10 GND
.,; 21 11 LD CATHODE
35 12 NC
13 LD ANODE, GND
4.7 --li-O.3 1000+~oo The~Tistor
!p
14 COOLER CATHODE
2l~g3- ~
7 I ~
2
h--30~
~H
=
(0 c~e
E
}~
yLD
8
TOP VIEW
FU-65SDF-3
• MITSUBISHI
. . . . ELECTRIC 7 -57
FU-65SDF-3
(Analog ApplicatiOn)
CHARACTERISTICS (Tc=25 oC, TLD=25 °C,unless otherwise noted)

Optical output power from fiber end PF CWo IF = lop 2 4 - mW
Central wavelength AC CWo IF = lop 1530 1550 1570 nrn
Side mode suppression ratio Sr CWo IF = lop 30 35 - dB
Cutoff frequency (- 1.5dB) fe IF = lop 2 - - GHz
2nd order distortion D2 2 tone test
f1 = 244MHz
(Note 2) - -40 -30 dBc
3rd order distortion f2 = 250MHz - -60 -45
Da m = 0.35 (each) dBc
IF (average) = lop
Relative intensity noise Nr Rmodule > 40dB - -155 -150 dB/Hz
Tracking error (Note 3) Er Tc = - 20-65"C APC. ATC - 0.3 - dB
Monitor current Imon CWo IF = lop. VRD = 5V 0.2 - - rnA
Dark current (Photodiode) ID VRD=5V - 0.1 1 pA
Capacitance (Photodiode) Cl VRD = 5V. f = IMHz - 10 - pF
Note I) IF : Forward current (LD)

Note 2) ft. f2 : Modulation frequency
m : Optical modulation depth! Carrier
Rmodule : Optical return loss from fiber to LD module
Rmodule = - 10 • log PFR
PF
where PFR: Reflected optical power to LD module
THERMAL CHARACTERISTICS (TLo=25 °c, Tc= - 20-65OC)

Thermistor resistance Rlh TLD = 25"C 9.5 10 10.5 kQ
Cooling Capacity ll.T Tc = 65"C 40 - - "C
Cooler Current [pe ll.T = 40"C - 0.6 1 A
Cooler Voltage Vpe ll.T = 40"C - 1.2 2 V

Type SM -
Mode- field dia. 10 ± 1 pm
Jacket dia. 0.9 mm
'. MITSUBISHI
7 - 58 . . . . ELECTRIC
FU-65SDF-3
(Analog Application)
@
6.--------------------. 3 10.-----------------~__.
Tc=25'C Tc=25'C
TLD=25'C
I
....
[F=[OP
4
S.
I
-30
:J
o
5 ~
S-
:J
0.
o
o 2
_~ -70 '-------------'-'-------------'
~ ~ 1545 1550 1555
0. ~ Wavelength (nm) \
o
°0~--~--~--~6~0---OO~--~100

Forward current vs, optical output power
• MITSUBISHI
"'ELECTRIC- 7-59
FU-65SDF-4
1.55 tJ. m DFB-LD Module with Singlemode Fiber Plgtall(Digltal Application)
Module type FU - 65SDF - 4 has been developed

1.55,um wavelength InGaAsP DFB- LD.
in high capacity long haul digital optical
FEATURES
• Built - in optical isola tor
• Diodes and T.E.cooler are hermetically sealed
FU-65SDF-4
ABSOLUTE MAXIMUM RATINGS (TLD=25"C)

Items Symbols Conditions' Ratings Units
fiber end
CW 4 mW
Laser diode
Reverse Voltage VRL 2 V
Photodiode for Reverse Voltage VRD 20 V
monitoring Forward Current IFD 2 rnA
Operating case temperature Tc - 20-65 'C
Storage temperature Tstg -40-70 'C
7.38 15.24 PIN 1

-~
PIN FUNCTION
1 COOLER ANODE
2 THERMISTOR
3 PO ANODE
4 PD CATHODE
5 GND
6 NC
7 NC
8 NC
9 NC
"-
35
Thermistor
10 GND
4.7 -lI--O.3 1000'800 11 LD CATHODE
ni' ~
2 f - -2l~g3-
-30-
~ 12
13
NC
LD ANODE, GND
14 COOLER CATHODE
FU-65SDF-4
• MITSUBISHI
FU-65SDF-4
1.55 \.I m dFB-LD Module with Singlemode Fiber Pigtall(Dlgltal Application)
CHARACTERISTICS (Tc=25 DC, TLo=25 DC, unless otherwise noted)

Light- emission central wavelength .l.c CW.IF = lop 1530 1550 1570 nm
2.5G bps NRZ
Mark ratio 50 %
Spectral width (- 20dB full width) ll.J. IF peak = lop - 0.7 - nm
Cutoff frequency (- 1.5dB) fc IF = lop 3 - - GHz
2.5G bps NRZ
Mark ratio 50 %
Rise and Fall time (10-90 %) tr. tl IF peak = lop - - 200 ps
Differential efficiency 11 - 0.02 0.05 0.2 mW/mA
Dark current (PD) ID VRD=5V - 0.1 1 /.LA
Note 1) IF: LD forward current
Note 2) Rmodule: Optical return loss from fiber to LD module
Rmodule = - 10 . log ~
PF
Where PFR : Reflected optical power to LD module.
Note 3) Er = max 110 . log PF 1
PF (25"C)
THERMAL CHARACTERISTICS (TLo=25 "C, Tc= - 20-65 "C)

Thermistor resistance Rth Tw=25'C 9.5 10 10.5 kQ
Cooling Capacity ll.T Tc=65'C 40 - - 'C
Cooler Current Ipe ll.T =40'C - 0.6 1 A
Cooler Voltage Vpe ll.T =40'C - 1.2 2 V

Type SM -
Mode- field dia. 10 ± 1 /.Lm
Jacket dia. 0.9 mm
• MITSUBISHI
..... ELECTRIC 7 - 61
FU-65SDF~4
1.551..l m DFB-LD Module with Slngfemode Fiber Plgtall(Dlgltal Application)
Tc~2S'C
en 0,-------;..,-------,
~ 2. 5Gbps NRZ
TLD~25'C
~ -20
~o
1550 1551
Wavelength (nm)
°0~~2~0--4~0-~60~~8~0-~100
.~
1ii
~ 10. __
O%---+-£-+~-+--+-~--~
200ps/div
7-62 J..~HI
, :--{
~\~~~ FU-68SDF-2
~\\~\..\ (for 2.5Gbps Digital Application)
Module type FU-68SDF-2 is a 1.55tlm DFB-

LD module with single-mode optical fiber. This
product is based on FU-65SDF-4 and has im-
provement on high speed modulation characteristics
by separating LD bias pin from RF input pin.
It also has a RF termination circuit to match
to characteristic impedance of LD drive signal.
MAIN FEATURES
• Input impedance is 25 Q
• Multi quantum wells(MQW)DFB Laser diode module
• Single - mode optical fiber pigtail
• Built- in optical isolator
FU-68SDF-2
ABSOLUTE MAXIMUM RATINGS (TLD=25'C)

PF CW 4 mW
fiber end
Laser diode
Forward current IF CW 150 rnA

PIN FUNCTION
1 THERMISTCJl
2 THERMISTOR
3 LD BIAS( -)
4 PO ANODE
5 PO CATHODE
Fiber 6 COOLER ANODE
;- 7 COOLER CATHODE
8 GND
9 GND
10 NC
11 LD ANODE,GND '
12 LD RF
13 LD ANODE,GND
14 NC
4.6
2 26 ± 0.3
30
'FU-68SDF-2
• MlTSUBlSHI
"'B.ECTRIC 7-63
FU-68SDF-2
CHARACTERISTICS (Tc=25 DC, TLo=25 DC, unless otherwise noted)·

Input impedance Zin IF = lop - 25 - Q
Optical output power from fiber end PF CWo IF = lop 2 3.5 - mW

Light - emission central wavelength AC CWo IF = lop 1530 1550 1570 nm
2.5G bps NRZ
Mark ratio 50 %
Spectral width (- 20dB full width) ilA IF peak = lop - 0.2 - nm
Side mode suppression ratio Sr CWo IF = Iop 33 40 - dB
Cutoff frequency (- 1.5dB) fc IF = Iop 3.5 - - GHz
2.5G bps NRZ
Mark ratio 50 %
Rise and Fall time (10-90 %) tr. tl IF peak = lop - - 150 ps
Dark current (PD) ID VRD=5V - 0.1 1 /LA
PF
Where Pm: Reflected optical power to LD module.
Note 3) E, = maxi 10 • log PF
PF (25"C)
I
THERMAL CHARACTERISTICS (TLo=25 "c, Tc= - 20-65 DC)
Thermistor resistance Rth TLD = 25"C 9.5 10 105 kQ
Cooling Capacity ilT Tc =65"C 40 - - "C
Cooler Current lpe ilT = 4O"C - 0.6 1 A
Cooler Voltage Vpe ! ilT = 4O"C - 1.2 2 V

Type SM -
Mode-field dia. 10 ± 1 /Lm
Cladding dia. 125 ±.2 /Lm
Jacket dia. 0.9 mm
. • . MITSUBISHI
7-64 . . . . ELECTRIC
FU-68SDF-2
DFB-LD Module with Single-mode Fiber Plgtall(for 2.5Gbps Digital Application)
Tc=2S·C 2.5Gbps NRZ

TLD=2S·C Extinction
I
... -20
ratio 8%
~o
~
~ -40'''S4-9" " - - - - -..
,550'---~---,...
SS,
~ Wavelength (nm)
1'0E-i Light-emission spectrum
o
°0~~~20~-~~~~6~0-~M~-~'OO·
~
.~
CD '0 ___ _
a: 0%-......-
200ps/div
This product is under development. and indicated specifications in this sheet may be changeable without any notification.
Could you please inquire of sales office about the latest specification. before it is purchased.
• MITSUBISHI
.... aECTRIC 7-65
FU-01 LD-N (O.78),FU-27LD{O.78)
O.781.1m LD Module for Multimode Fiber
LD Module types FU-OILD-N (0.78) and FU

-27LD (0.78) co~tain AlGaAs LDs (Laser diodes)
for O.78tlm band and are used as light source
for intermediate and high speed local area network
systems.
FEATURES
• High - speed response FU·01 LO·N (0.78)
• Emission wavelength is in O.78tlm wavelength
band
(FU-OILD-N (0.78))
• Diodes are hermetically sealed FU·27LO (0.78)
ABSOLUTE MAXIMUM RATINGS (TC=25'C)

Ratings
iFU-01LD-N(0.78) FU - 27LD ( 0.78)
PF CW 3 3 mW
Opera ling case temperature Tc - - 20-60 -20-60 "C
Storage temperature Tstg - -40-70 -40-70 "C
Note 1) Fiber: GI type with core dia. 50llffi and N.A.O.2

9.5±O.3
2 1
polb
~h
3 (Case)
Fiber
2 1
PD~D
j.
'l
3 (Case)
FU·01 LO·N (0.78)
FU·27LO (0.78)
• . MITSUBISHI
7 - 66 . . . . ELECTRIC
FU-01 LD-N (O.78),FU-27LD{O.78)
0.781.1 m LD Module for Multlmode Fiber
CHARACTERISTICS (Tc=25°C, unless otherwise notQd)

FU-01LD-N (0.78) FU-27LD (0.78)
Operaitng voltage Vop CWo IF = lop (Note 1) - 1.5 2.5 - 1.8 2.5 V
Optical output power from fiber
end (Note 2)
PF CW.IF= lop 1 1.8 - 1 1.8 - mW
Central wavelength Ac CW.IF = lop 765 785 795 765 780 795 nm
Rise and fall times tr. tf In = Ith.1O-00 % (Note 3) - 0.4 - - 0.4 - ns
Tracking error (Note 4) Er Tc = - 20-60 "C. APC - 0.2 - - 0.2 - dB
Differential efficiency (Note 2) n - - 0.18 - - 0.18 - mW/mA
Monitor current Imon CWo IF = lop, VRO = 5V 0.15 0.4 - 0.15 0.4 - rnA
Dark current (Photodiode) 10 VRo=5V - - 0.5 -' - 0.5 /lA
Capacitance (Photodiode) Ct VRO = 5V. f = 1MHz - 7 - - 7 - pF
Optical connector type (Note 5) - - FC - -
Note 2) Fiber: GI type with core dia. 50llm and N.A.O.2
Note 3) 18 : Bias current (LD)
Note 4) E, = MAXI 10 • log PF
PF (25'C)
I
Note 5) FU-01LD- N (0.78) only
FIBER PIGTAIL SPECIFICATIONS (FU-27LD (0.78) only)

Type GI -
Core dia. 50t3 /lm
N.A. 0.2 -
Cladding dia. 125 ±3 /lm
Jacket dia. 0.9 mm
• MITSUBISHI
"ELECTRIC 7-67
FU-01 LD-N (O.78),FU-27LD{O.78)
0;781.1 m I.D Module for Multimode Fiber
2.o,----------------, Tc=25"C
IF=IOP
>-
.1Ji 0.8
.~- 0.6
3' 1.5
-.... .i
.~
5 0.4
"0
.,c: -----
r---.- -20'c
~ 25'C
a:
0.2
o~__~__~~~~~~~I.A~~~~
.J
~
t;:::
60'C 774 776 778 780 782 784
E Wavelength (nm)
,g 1.0 Light-emission spectrum
!
...
Co
:::l
Co
'5.
0
0.5
~
Q.
0
°0~---2~O-~~4~0~~-6LO---OO~-~100 2 3
Time (nsec.)
. .' MITSUBISHI
7-68 "'ELECTRIC
FU-01 LD-N (o.a5), FU-27LD (o.a5)
LD Module types FU-OILD-N (0.85) and FU-

27LD (0.85) contain AIGaAs LDs (Laser diodes)
for 0.85,um band and are used as light source
for intermediate and high speed local area network
systems.
FEATURES
• Emission wavelength is in O.85,um wavelength
band
(FU-OILD-N (0.85))
• With photodiode. for optical output monitor
ABSOLUTE MAXIMUM RATINGS (Tc=25 "C)

Ratings
FU-01LD-N(0.85) FU-27LD (0.85)
(Note 1) PF CW 3 3 mW
Operating case temperature Tc - - 20-60 -20-60 'c
Storage temperature Tstg - -40-70 -40-70 'C
Note 1) Fiber: GI type with core dia. 50pm and N.A.O.2
2 I
pol b
~K
15.5 1.5 (Case)
22
~
15
2 I
~
PO~D
!O.
~ i.
~
II I II
3 (C ••e)
III 1;-111 ~
FU-01 LO-N (0.85) 2.5
7
If
5
18
d 15 37 l000+~
FU-27LO (0.85)
•. MITSUBISHI
. . . . ELECTRIC 7 - 69
FU-01 LD~N{O.85), FU-27LD (O.85)
CHARACTERISTICS. (Tc=25 °c, unless otherwise noted)

FU-OILD-N (0.85) FU-27LD (0.85)
Items Symbols· Conditions Units
Operating voltage Vap CW, IF = lop (Note 1) - 1.5 2 - 1.5 2 V
end (Note 2) PF CW, IF = lop 1 1.8 - 1 1.8 - mW
Central wavelength .I.e CW, JF = lop 800 850 900 800 850 900 nm
Rise and fall times tr, tf 18 = Ith, 10-90 % (Note 3) - 0.4 - - 0.4 - ns
Tracking error . (Note 4) Er TC = - 20-60 "C,APC - 0.2 - - 0.2 - dB
Differential efficiency (Note 2) 1/ - - 0.25 - - 0.25 - mW/mA
Monitor current Imon CW, IF = lop, VRO = 5V 0.1 0.3 - 0.1 0.3 - rnA
Dark current (Photodiode) 10 VRo=5V - - 0.5 - - 0.5 JJ.A
Capacitance (Photodidde) Ct VRO = 5V, f = 1MHz - 7 - - 7 - pF

Note 1) IF..• Forward current (LD)
Note 2) Fiber: GI type with core dia. 50pm and N.A.0.2
Note 4) Er = MAX 110 . log _P_F_.
PF (25'C)
_I
Note 5) FU-01LD-N (0.85) only
FIBER PIGTAIL SPECIFICATIONS (FU-27LD (0,85) only)

Type GI -
Core dia. 50±3 JJ.m
N.A. 0.2 -
Cladding dia. 125 ±3 JJ.m
Jacket dia. 0.9 mm
• MITSUBISHI
7.-70 "'ELECTRlC
FU-01 LD-N (O.8S), FU-27LD (O.8S)
2.or---------------------------__ TC~25"C
IF=lop
>- 1
.~
<: 0.8
.~ 0.6
1.5 -••
.~ 0.4
~
0.2
0844
846 848 850 852 854
Wavelength (nm)
1.0 Light-emission spectrum
..
:::J
S-
:::J
o
·10 0.5
~
0~0--------~1~0--~--~~~------~ 2 3
Forward current (rnA) Time (nsec,)

Forward current VB. Optical output power Pulse response
• MITSUBISHI
..... ELECTRIC 7-71
FU-23LD
0.85 1.1 m LD Module with Multlmode Fiber Pigtail
Module type FU-23LD has been developed for

coupling a multimode optical fiber and a 0.85
.urn wavelength AlGaAs LD (Laser diode). The
package is incorporated with dual-in-line pins
for electrical connection.
use in short and medium haul digital or analog
FEATURES
• Emission wavelength is in 0.85.um band FU-23LD
ABSOLUTE MAXIMUM RATINGS (TLD=25'C)

PF mW
Note 1) Pulse condition: Pulse width"" IllS, Duty ratio"" 50 %
Fiber
25.4
~
~-
22.8 25 3.2 19+0.3 PIN FUNCTION

a DOOOOb
1 COOLER ANODE
~ t-- 0>
~ -------
~ ~ ~~
Z NC
r-r- '~1 ~J t ~~~1~1 .~

000000"
1000+ 200
3 NC
4 NC
5 LD ANODE. GND
;+:, ::lJ dl BOTTOM VIEW 0
~~I
~
2-¢3.2 6 NC
7 PD CATHODE
8 PD ANODE .
U¢0.45
1tj.1eI air
2.54 9 LD CATHODE
10 LD ANODE. GND
3.8 15.24
7.62 11 THERMISTOR
PD ~ LD Thermistor ~ .. 12
13
THERMISTOR
NC
o~
14 COOLER CATHODE
7
o -'6 0 0
1
+
BOTTOM VIEW
FU·23LD
. • MITSUBISHI
7-72 . . . . ELECTRIC
FU-23LD
0.851.1 m LD Module with Multlmode Fiber Pigtail
CHARACTERISTICS (Tc=25 °C, TLD=25 "C, unless otherwise noted)

Operating voltage Vap CW.IF= lop (Note 1) - 1.8 - V
Optical output power from fiber end PF CW.IF = lop 2.5 4 - mW
Central wavelength Ae CW.IF = lop 795 850 905 nm
Rise and Fall times tr. tl Is = Ith. 10-90 % (Note 2) - 0.4 - ns
Differential efficiency 1/ - - 0.2 - mW/mA
Monitor current Imon CWo IF = lop. VRD = 5V 0.3 1 - rnA
Dark current (Photodiode) ID VRD=5V - - 0.5 fJ.A
Capacitance (Photodiode) Ct VRD = 5V. f = 1MHz - 7 - pF
Note 2) IB: Bias current (LD)
Note 3) Er = MAXi 10 • log PF
PF (25"C)
THERMAL CHARACTERISTICS (TLD=25 °C, Tc= - 20 OC-65 'C)

Thermistor resistance Rth TLD = 25'C 9.5 10 10.5 kQ
Cooling capacity t.T Tc == 65'C 40 - - 'C
Cooler current Ipe t.T = 4O'C - 0.6 1 A
Cooler voltage Vpe t.T = 4O'C - 1.6 2 V

Type GI -
Core dia. 50±3 fJ.m
N.A. 0.2 -
Jacket dia. 0.9 mm
.•. MITSUBISHI
"'ELECTRIC 7 -73
FU-23LD
0.851.1 m LD Module with Multlmode Fiber Pigtail
TLD=25°C TLD=25°C
IF=lop
3 4 .~
-5 II)
"0
ji 0.8
C
.5
1
Q)
~
0.6
E ~ 0.4
,g
~
0.2
0
0.
2
:; 846 848 850 852 854
S:J
0 Wavelength (nrn)
m
u Light-emission spectrum
''5.
0
0
0 10 40 50
Forward current VS. Optical output power
• MITSUBISHI
7-74 . . . . ELECTRIC
FU-11LD-N
1.31.1 m Connectorlzed LD Module for Multlmode Fiber
Module type FU-llLD- N has been developed

for coupling a multimode optical fiber and a
1.3.um wavelength InGaAsP LD (Laser Diode).
This module is the optimum light source for
use in medium haul digital optical communication
systems.
FEATURES
FU-11LD-N
ABSOLUTE MAXIMUM RATINGS (Tc=25 't)
(Note 1) Pr CW 7.5 mW
monitoring Forward Current IrD - 2 rnA
Operating case temperature Tc - -20-65 -c
Storage temperature Tstg - -40-70 -c
Note 1) Fiber: GI type w:ith core dia. 50# m and N.A.O.2
9.5±O.3 M8XO.75 Thread
15.5 L5
15 22
3 1 (Case) FU-11LD-N
• MlTSUBlSHI
..... ELECTRIC 7-75
FU-11LD-N
1.31J m Connectorlzed LD Module for Multlmode Fiber
CHARACTERISTICS (1c=25°C, unless otherwise noted)

Operating voltage Vap CW.IF=lop (Note 1) - 1.2 1.6 V
(Note 2)
PF CW.IF=1op 2 5 - rnW
Central wavelength Ac CW.IF=1op 1270 1300 1330 nm

Rise and fall times tr. tf IB = Ilh. 10-90 % (Note 3) - 0.3 - ns
Tracking error (Note 4) Er Tc = - 20-65 "c.APC - 0;3 - dB
Differential efficiency (Note 2) 1/ - - 0.2 - rnW/rnA
Monitor current Imon CWo IF = lop. VRD = 5V 0.2 1 - rnA
Dark current (Photodiode) 10 VRD=5V - 0.1 1 IlA
Capacitance (Photodiode) CI VRO = 5V. f = 1MHz - 10 - pF
Note 2) Fiber: GJ type with core dia. 50pm and N.A.O.2
Note 4) E, = MAXj 10 • log PF<J'r,\;) I
Br--------------------------,
O.B
.~
(/)
c:
.'!!
.5 0.6
Q)
>
'';::;
6 ..!l! 0.4
~
0.2
°1~2=90~~12~95~LL~~~~~--~1~31~0--~1~315
4 Wavelength (nrn)
Llght-emlsslon spectrum
...
::I
S- le=Ith
::I
o do
1 1'\
--- -l-\
~
] 2 90-- -- -- -- -- -- r - -
0.
o 1\
\.
'\
°0~~~~--~~----6~0~--~OOO---~100
\
Forwatd current (rnA) 10,--
o%
-- -- -- r-"';: f---
r--\: ~ --
Forward current vs. Optical output power [
500ps/div
Pulse response
7-76
FU-33LD
1.31J1T'1 LD Module with Multlrnode Fiber Pigtail
Module type FU-33LD has been developed for

coupling a multimode optical fiber and a 1.3ttm
wavelength InGaASP LD (Laser diode). The package
is incorporated with dual-in-line pins for electrical
connection.
use in high-SPeed long haul digital optical communi-
cation systems and use in measuring instruments.
FEATURES
• Emission wavelength is in 1.3ttm band
FU-33LD
ABSOLUTE MAXIMUM RATINGS (TLD=25"C)

PF mW
Laser diode fiber end Pulse (Note 1) 7.2
Storage temperature T.tg - -40-70 "C
..
Note) Pulse condlllon: Pulse Wldth,. 1 /is, Duty ratIO:; 50 %
Fiber
~
25.4
22.8 25 3.2 19 ±O.3
-
oooooob ~ PIN FUNCTION
..l- ~ ---f ~ 1 COOLER ANODE
~ -~ OOOOO"'~
t ~~h g
2 NC
rr T;::! ~~] ~ ~ +200

1000 0
3
4
NC
NC
I ~~~~ ~
~
U
ij:~
#J,4~il"0
BOTTOM VIEW 5
6
7
LD ANODE, GND
NC
PD CATHODE
thP leY °li

2.54 8 PD ANODE
9 LD CATHODE
3.8 15.24
7.62 10 LD ANODE, GND
~ ~
11 THERMISTOR
CO Them..., 12 THERMISTOR
13 NC
7
o boo 01-
I
+
14 COOLER CATHODE
BOTTOM VIEW
FU-33LD
• MITSUBISHI
"'ELECTRIC 7-77
FU-33LD
1.3 iJIt1 LD Module with Multlmode Fiber Pigtail
CHARACTERISTICS (Tc=25 "C, TLD=25 "C, unless otherwise noted)

Optical output power· from fiber end PF CW.IF= lop 1.5 2.5 - mW
Central wavelength ).c CW.IF= lop 1270 1300 1330 nm
Spectral bandwidth (RMS) (Note 3) A). CW.IF = lop - 1.4 - nm
Rise and fall times tr. tf IB = Ith. lO-90 % (Note 2) - 0.3 - ns
Tracking error (Note 4) Er Tc = - 20-65 "C APC. ATC - 0.2 - dB
Differential efficiency TJ - - 0.17 - mW/mA
Monitor current Imon CWo IF = lop, VRD = 5V 0.1 0.6 - rnA
Dark current (Photodiode) ID VRD=5V - 0.1 1 I1A
Capacitance (Photodiode) Ct VRD = 5V. f = 1MHz - 10 - pF
Note 1) IF: Forward current (LD) Note 3) ~ l = V Eal (AI - Ac) 2

E81 ai : Relative intensity of laser spectral
Note 2) 18 : Bias current (LD) (ai <: ap x 0.01) emission modes
Note 1) Er=MAXIIO'IOgPF r~"C) I
ap : Peak of laser spectral emission modes
THERMAL CHARACTERISTICS (TLD=25 °C, Tc= - 20 "C-65 °C)

Thermistor resistance Rth TLD = 25"C 9.5 lO 10.5 kQ
Cooling capacity AT Tc=65"C 40 - - "C
Cooler current lpe AT = 4O"C - 0.6 1 A
Cooler voltage Vpe AT = 4O"C - 1.6 2 V

Type Gl -
Core dia. 5O±3 11m
N.A. 0.2 -
Cladding dia. 125 ± 3 11m
Jacket dia. 0.9 mm
• MITSUBISHI
7 -' 78 .... ELECTRIC
FU-33LD
1.3 iJrtl LD Module with Multlmode Fiber Pigtail
TLD=2S·C
TLD=25°C
If'=Iop
~
'iii 0,8
~ c
Q)
-5 .S 0,6
"0
cQ) 2 Q)
> 0,4
l;;
.,
''::;
..c CD 0,2
~
a:
E olL.29:-:-0----,,12:'::954NS~1300 1305 1310 1315
.g Wavelength (nm)
~
0
light-emission spectrum
a.
~
is=!th
:J
Jo ~
a.
:;
0
90 - -- --/- -- - ---- - -
(ij
,\,1
I
0. It
0
\
0 \
0 10 20 30 40 50 10
%
- -
r-x -
Forward current (mA) [
500ps!dlv
Pulse response
• MITSUBISHI
. . . . ELECTRIC 7 -79
FU-02LE-N,FU-23LE
0.851-1 m LED Module for Multlmode Fiber
LED Module, FU-OZLE- Nand FU-Z3LE contain

a highly-reliable O.85/1m band AlGaAs/Ga Light-
emitting diode and are used as light source for
both digital and analog optical communication
systems.
FEATURES
• High optical output power FU·02LE·N
• High - speed modulation
• Superior linearity between current and optical
output
• High reliability
ABSOLUTE MAXIMUM RATINGS (Tc=25 °C)

Ratings
FU-02LE-N FU-23LE
Forward current I CW 75 75
IF Tc~50"C rnA
(Note 1) I Pulse (Note 2) 120 120
Reverse voltage VR - 3 3 V
Operating case
temperature
Tc - -20-65 - 20-65 "C
Storage temperature TSlg - -40-70 -40-70 "C

Note 1) Forward current at Tc > 50"(;
IF(Tc)= Ir(Tc;'; 50,,(;) • 100-Tc

- 50
Note 2) Frequency> 100kHz, Duty ratio < 50 %
Fiber
C
1000+ 200 ,\
o
1~2
FU·02LE·N FU·23LE
•.. MITSUBISHI
7-80 . . . . ELECTRIC
FU-02LE-N, FU-23LE
O.85j..l m LED Module for Multlmode Fiber

FU-02LE-N FU-23LE
Central wavelength lc IF=50mA 780 840 880 780 840 880 nm
Spectral bandwidth (FWHM) Lll IF=50mA - 45 - - 45 - nm
PF IF = 75mA 40 65 - 40 65 - /lW
end (Note 1)
Cutoff frequency (- 1.5dB) fc IF = 25mA + 4mAp- P 10 30 - 10 30 - MHz
Forward voltage VF IF = 50mA - 1.6 2.2 - 1.6 2.2 V
Reverse current IR VR=3.0V - - 10 - - 10 /lA
Note 1) Fiber: GI type with core dia. 50ltID and N.A.O.2
Note 2) FU-02LE-N only
FIBER PIGTAIL SPECIFICATIONS (FU-23LE only)

Type GI -
Core dia. 50±3 /lm
N.A. 0.2 -
Cladding dia. 125.± 3 /lm
Jacket dia. 0.9 mm
100
3 ::L Tc=25'C
I,=50mA
"0 1.0
t: 80
Q)
li
;;:::
25'C
~ 0.8
'iii
E t:
,g j!l
,!; 0.6
~
0.
~
'."
..!ll
...:> £ 0.4
0.
S
0
a; 0.2
,!.!
Q. 80 100
0
Forward current vs. Optical output power Wavelength (nm)
..• MITSUBISHI
. . . . ELECTRIC 7 - 81
FU-02LE-N, FU-23LE
0.8511 m LED Module for Multlmode Fiber
O~-------- __ ~-~--------------
@
;g -2.5
51c:
8. -5.0
~
-7.5
Tc=25'C
I,=25mA+4mA,.,
-10; 0 ':--1-~2;----75---:;1"'0- - c2t,,0--+'50;---:;;'.100

Frequency (MHz)
Frequency response
. • MITSUBISHI
7-82 .... ELECTRIC .
FU-13LE-N,FU-34LE
1.3 ~ m LED Module for Multimode Fiber
LED Module, FU -13LE- Nand FU -34LE contain

a highly-reliable 1.3J,tm band InGaAsP /InP Light-
emitting diode and are used as light source for
digital optical communication systems.
FEATURES
• High-speed modulation (fe = 150MHz)
• High reliability FU-13LE-N
FU-34LE
ABSOLUTE MAXIMUM RATINGS (Tc=25 ·C)
Ratings
FU-13LE-N FU-34LE
Forward current
IF Tc ~ 5O"C I CW 120 120
rnA
(Note 1)
I Pulse (Note 2) 150 150
Reverse voltage VR - 2 2 V
Operating case -
Tc -20-65 -20-65 "C
temperature
Storage temperature Tstg - -40-70 -40-70 "C
Note 1) Forward current at Te > 5O'C
l00-Tc
IF(Tc)= IF (Tc" 50'C) '----so-
Note 2) Frequency> 100kHz, Duty ratio < 50 %
M8xO.75 Thread 3
Fiber
C
1000+ 200
o .1
,-"If
1~2
11
",I,"
1~2 3 (Case)
'J'
3 (Case)
FU-13LE-N FU-34LE
• . MITSUBISHI
"'ELECTRIC 7-83
FU-13LE-N,FU-34LE
1.31..1 m LED Module for Multimode Fiber

FU-13LE~N FU-34LE
Central wavelength .l.c IF= 100mA 1260 1300 1340 1260 1300 1340 nm
Spectral bandwidth (FWHM) t..:I IF= loomA - 130 150 - 130 150 nm
(Note 1) PF IF = loomA 10 15 - 10 15 - /.lW
end
Cutoff frequency (- 1.5dB) fc IF = lOOmA + 4mAp- P - 150 - - 150 - MHz
Forward voltage VF IF = lOOmA - 1.5 2 - 1.5 2 V
Reverse current .. IR VR=2V - 300 - - 300 - /.lA
Note 1) Fiber: GI type with core dia. 501lm· and N.A.O.2
Note 2) FU-13LE-N only
FIBER PIGTAIL SPECIFICATIONS (FU-34LE only)

Type GI -
Core dia. 50±3 /.lm
N.A. 0.2 -
Cladding dia, 125 ±3 /.lm
Jacket dia. 0.9 ·mm
3::1. Tc=Z5"C
Tc=25'C
-g
Q)
20 1.0 IF=100mA
il ~
'iii
""E c
....e
.~
g!
';; 0.5
~
OL-~~ __~__- L__~~~~__~

1000 1200 1600
Wavelength (nm)
Forward current VS. Optical output power Llght.emlsslon spectrum
• . MITSUBISHI
7-84 . . . . ELECTRIC
FU-13LE-N,FU-34LE
1.31..1 m LED Module for Multimode Fiber
0
@
;g
II>
~ -2
..
&
d!
-4 Tc=2S·C
IF=100mAdc+4mAp-p
10 20 30 50 100 200 300

Frequency (MHz)
Frequency response
7-85
FU-04PO-N, FU-21 PO
PO Module for Short Wavelength Band
FU-04PD-N and FU-21PD are detector modules

containing highly reliable Si photodiode' for short
wavelength band (O.5-1,ILm).
These modules are used as light-receiving devices
for short and medium haul optical communication
systems.
FEATURES FU-04PD-N
• High-responsivity
• Easy handling
• Receptacle type (FU - 04PD- N)
FU-21PO
Ratings
Items Symbols Units
FU-04PD-N FU-21PD
Reverse voltage VR 50 50 V
:Power consumption Pm 50 50 mW
Operating case
Tc - 20-60 - 20-60 'C
temperature
Storage temperature Tstg - 40-70 -40-70 'C
Tightening torque < OAKgf.cm >

M8xO.75 Thread 2-</>2.6
2- M2.6 Thread
en
~
Metal mount
1.3
Fiber
2.2
12
15.5 9 \\
1~2
I
3(Case)
FU-04PD-N FU-21PO
'"" ' MITSUBISHI

7-86 . . . . ELECTRIC
FU-04PD-N, FU-21 PD

FU-04PD-N FU-21PD
Detection range - - 430-1060 430-1060 nm
Responsivity (Note 1) R .l. =850nm 0.45 0.55 - 0.45 0.55 - A/W
Noise equivalent power NEP VR = 5V, .l. = 850nm - 5X 10-16 - - 5 X 10-16 - W/.(Hz
Dark current 1D VR=5V - 0.1 2 - 0.1 2 nA
Cutoff frequency (- 3dB) fc RL=50Q, VR=40V - 150 - - 150 - MHz
Capacitance Ct f = 1MHz, VR = 5V - 3 - - 3 - pF
.,
Note 1) Floer: GI type with core dla. 50llm and N.A. 0.2
Note 2) FU -04PD- N only
FIBER PIGTAIL SPECIFICATIONS (FU-21 PO'only)

Type G1 -
Core dia. 50±3 /.lm
N.A. 0.2 -
Cladding dia. 125 ± 3 /.lm
Jacket dia. 0.9 mm
0,7 10-5
10-6
0.6
0.5 / /\ 10-7 ./
./
3
......
~ 0.4 / \ VR 40V
../
../
.s:~
'iii
t: 0.3 / 1\ -'"
8 10-
"- y./../
./
/ \
0
0- 10 ././
w ./
(1) .... VR 5V
a: 0.2
V
0.1
/
I \ \
10-
10- 12
11
././
0
-20 o 20 40 60 80
400 600 800 1000 Temperature CC)
Wavelength (nm)
Temperature vs. Dark current
Wavelength responslvlty
• . MITSUBISHI
FU-04PO-N, FU-21 PO
1.5
,-..
P RL=50n
...... 1.0
~
.-c:
.!!!
0.5 i
.~
~0
../ /
0 ./
u
~
::l -0.5
~
~
E -1 0
~ .
400 600 800 1000 a 100 200 300
Wavelength (nm) Frequency (MHz)
Temperature responslvlty coefficient Frequency response
'. MITSUBISH.I
7-88 ..... ELECTRIC
FU-15PD-N, FU-16PD-N
PO Module for Long Wavelength Band
FU - 15PD - Nand FU - 16PD - N are detector

modules containing highly reliable InGaAs
photodiode for long wavelength band (l-1.6tLm).
InGaAs photo diode has very low dark current.
These modules are used as detector for high-
speed and long haul optical communication systems.
FEATURES
• High - responsivity
• Low dark current (lnA max)
• Easy handling
• Receptacle type
FU·15PD·N FU·16PD·N
Ratings
Items Symbols Units
FU-15PD-N FU-16PD-N
Reverse voltage VR 20 20 V
Reverse current IR 500 500 f,lA
Forward current IF 2 2 rnA
Operating case
Tc -30-70 -30-70 "C
temperature
Storage temperature Tstg -40-70 -40-70 "C
2-",2.6 x ",4. 4 Depth 1

Reverse side M8xO.75
M8xO.75
Thread
M
ci
- +1 ~
en
en
9. 5±0. 3
1-'---,l:-~1.5
5 1.5 14.5 20 15
14.5 20
\\ \\
l0--fDt+---02 1~2
r
3 (Case)
'[
3 (Case)
FU·15PD·N FU·16PD·N
• MITSUBISHI
"'ELECTRIC 7-89
FU-15PD-N, FU-16PD-N
CHARACTERISTICS (Tc=2S qC, unless otherwise noted)

FU-15PD-N FU-16PD-N
Responsivity (Note 1) R A = 1300nm 0.65 0.8 ~
0.65 0.8 - A/W
Dark current ID VR=5V - - 1 - - 1 nA
Cutoff frequency (- 3dB) fe RL=50Q. VR=5V 1 1.5 - 1. 1.5 - GHz
Capacitance Ct VR = 5V. f = IMHz - 1 2 - 1 2 pF
Note 1) FIber: GI type wIth core dla. 50llm and N.A. 0.2
1. o.-----------------,
10- 10
:;(
S
...c
~
:::J
<.l 10- 11
~
'"
0
~OhO~0~1~10~0~1~20~0~1~3~00~~1~40~0~~15~00~~1600
Wavelength (nm) Temperature ee)
Wavelength responsivity Temperature vs. Dark current
VR=5V
f=lMHz Rl=50n
1\
VR=5v O~------+-----~~---_l
m
::s
------- -------
-4~---+_-------r------_l
~
Q)
(fJ
c
o
0.
(fJ -8~------+_------4-------4
~
-12~---+_---_+---___I
-16~--~_+----+_---~
O~----------~----------~
o 10 20 o 0.5 1.0 1.5
Reverse voltage (V) Frequency (GHz)
Reverse voltage VS. Capacitance Frequency response
.• MITSUBISHI
7-90 "'ELECTRIC
FU-35PD
PD Module for Long Wavelength Band
FU-35PD is detector module containing highly-

reliable InGaAs photodiode for long wavelength
band (l-1.6.um).
InGaAs photodiode has very low dark current.
This module is used as detector for high-speed
and long haul optical communication systems.
FEATURES
• Low dark current (lnA max)
• Easy handling
• Compact package FU·35PD

Items Symbols Ratings Units
Reverse voltage VR 20 V
Reverse current IR 500 f.lA
Forward current IF 2 rnA
Operating case
Tc - 30-70 "C
temperature
Storage temperature Tstg -40-70 "C

LD
""
d ""
"El- en Fiber
, "El-
I
~I> M en
~~~~. d
"El-
It ~ 1 ~ CD II
"El-
~ t(J
II
V
0.7 4.5 11
20 11.7 1000+600
3 (Case)
~-02
1
1
/)j
FU·35PD
• MITSUBISHI
..... ELECTRIC 7 - 91
FU-35PD
CHARACTERISTICS (Tc=25 'C, unless otherwise noted)

Detection range - - 1000-1600 nm
Responsivity (Note 1) R A = 1300nm. VR = 5V 0.65 0.8 - A/W
Dark current ID VR=5V - - 1 nA
Cutoff frequency (- 3dB) fc RL = 50 Q, VR = 5V 1 1.5 - GHz
Capacitance Ct VR = 5V, f = IMHz - 1 2 pF
Note 1) FIber: GI type wah core dla. 50 f.lm and N.A. 0.2

Type GI -
Core dia. 50±3 .urn
N.A. 0.2 -
Cladding dia. 125 ± 3 .urn
Jacket dia. 0.9 mm
1.0...---------------,
10- 10
~
S
E
\':! 10- 11
:;
U
.>.t.
0
ro
10- 12
o~_~_~ __ ~_~_~_~
1000 1100 1200 1300 1400 1500 1600

Wavelength (nm) Temperature (OC)
Wavelength responslvlty Temperature VB. Dark current
• . MITSUBISHI
7-92 "'ELECTRIC
FU-35PD
2r-----------.-----------~
VR=5V
f=IMHz RL=50n
VR=5v O~------+-----=_~~------~
------- ------- ------~

-4~-------+--------~-------~
-8~-------+--------~------~
-12 f-----+-------+----~
-16 ~------_+--------~------___j
o~ ____________~----------~.
o 10 20 o 0.5 1.0 1.5
Reverse voltage (V) Frequency (GHz)
Reverse voltage vs. capacitance Frequency response
• MITSUBISHI
. . . . ELECTRIC 7 - 93
FU-05AP-N, FU-25AP
APD Module for Short Wavelength Band
FU-05AP-N and FU-25AP are detector modules

containing highly reliable Si APD (Avalanche
photodiode) with high - speed response.
These modules are used as detector for high-
speed optical communication systems.
FEATURES
• High - speed response (fe = 2GHz)
• Low noise level
• Can be connected to optical fiber with high
efficiency
• Compact package FU·05AP·N FU·25AP

Ratings
FU-05AP-N FU-25AP
Reverse current IR Tc;:;;70"C 200 200 /lA
Forward current IF Tc;:;; 70"C 10 10 rnA
Operating case
Tc - - 20-70 - 20-70 "C
temperature
Storage temperature TSlg - - 40-70 -40-70 "C
2-",2.6 x ",4. 4 Depth 1

Reverse
M8x O. 75
Thread
14.5
1.5
20
1 (Case)
\\ 1~2
/'~
r
10--@-02
3 (Case)
/
FU·05AP-N FU·25AP
• MITSUBISHI
7 - 94 . . . . ELECTRIC
FU-05AP-N, FU-25AP
CHARACTERISTICS (Tc=25 "C, unless otherwise noted)

FU-05AP-N FU-25AP
Responsivity (Note 1) R ,1, = 850nm, VR = 50V 0.33 0.4 - 0.33 0.4 - A/W
Breakdown voltage VBR 1D = 100 I/.A 100 150 200 100 150 200 V
Temperature coefficient of
breakdown voltage
{3 - - 0.12 - - 0.12 - %/'C
Dark current 1D VR=50V - 0.3 1 - 0.3 1 nA

Noise equivalent power NEP ,1, =800nm - Ix 10-14 - - IX 10-1' - W/-JRz
Excess noise factor F M = 100 (Note 2) - MQ.25 - - MO." - -
Maximum multiplication rate Mmax 100 = 10nA, RL = 1k Q - 1000 - - 1000 - -
Cutoff frequency (- 3dB) fc M= 100,RL=50Q ~

2 - - 2 - GHz
Capacitance Ct VR = O.9VBR, f = 1MHz - 1.5 2 - 1.5 2 pF
Note I) Fiber: GI type with core dla. 50 11m and N.A. 0.2
Note 2) M. Multiplication rate
Note 3) FU-05AP-N only
FIBER PIGTAIL SPECIFICATIONS (FU-25AP only)

Type G1 -
Core dia. 50±3 I/.m
N.A. 0.2 -
Cladding dia. 125 ±3 pm
Jacket dia. 0.9 mm
'" . MITSUBISHI
"'ELECTRIC 7 - 95
FU-05AP-N, FU-25AP
0.8.----------------, 1000,.----Tc-=-25-0C--------y--,
Tc=25°C
3 500
~ 0.6
~
:~ 0.4
c:
o
0.
C/)
&. 0.2
o500 600 700 800 900 1000 1100

Wavelength (nm)
Wavelength responsivlty
0.6 0.7 0.8 0.9 1.0

Normalized bias voltage
,....,
OJ
;g -3d8 Multiplication rate
CD
C/)
c:
o
~ -10
&.
M=100
-1.=890nm
Tc=25°C
-20 "1------.J\o;-----:1:-!:-00;:-----:1=-.*00"'0--1=-'0.000
Frequency (MHz)
Frequency response
• MITSUBISHI
7-96 ...... ELECTRIC
FU-12AP-N, FU-32AP
APD Module for Long Wavelength Band
FU-12AP-N and FU-32AP are deteCtor module

containing highly reliable Ge APD (Avalanche
photo diode) for long wavelength band (0.8-1.5
.urn) and has high - speed response.
These modules are used as detector for high-speed
long and medium haul optical communication
systems.
FEATURES
• High-responsivity
• High - speed response (1 GH~ typ.)
• Low capacitance
• Easy handling
FU-32AP
ABSOLUTE MAXIMUM RATINGS (Tc=25 "C)
Ratings
Items Symbols Units
FU-12AP-N FU-32AP
Reverse current IR 1 1 rnA
Forward current IF 100 100 rnA
Operating case
Tc -30-70 -30-70 "C
temperature
Storage temperature Tstg -40-70 -40-70 "C

2·¢2.6
.C;I;
i-
Ll>
N
c::i
"$.
1.3
22.8 10
FU·12AP·N
....c.c
I I'
7~
= = '==
I L I 14
I
20
1000+ 200
13 20.6 0
//
1~2 FU·32AP
• MlTSUBlSHI
. . . . ELECTRIC 7 - 97
FU-12AP-N, FU-32AP
APD Module for Long Wavelength Band·
CHARACTERISTICS (Tc=25 °C, unless otherwise noted)

FU-12AP-N FU-32AP
Responsivity (Note 1) R A=1300nm. VR=IOV 0.68 0.72 - 0.68 0.72 - A/W
Breakdown voltage VBR 1D = 100l1A 25 30 40 25 30 40 V
Temperature coefficient of
breakdown voltage (Note 2) /3 - - 0.1 - - 0.1 - %/"C
Dark current 1D VR=0.9VBR - 0.3 0.5 - 0.3 0.5 I1A

A = 1300nm. M = 10 - M - - M - -
Excess noise factor F O•95 O•95
1po=2I1A. B=IMHz (Note 3)
Cutoff frequency (- 3dB) fc A=1300nm. M=IO. Rl=50Q 800 1000 - 800 1000 - MHz
Capacitance Ct VR = 20V. f = lMHz - 2 2.5 - 2 2.5 pF
Note 1) FIber: GI type wIth core dla. 50llm and N.A. 0.2
VBR (25"C + l>T) - Vim (25"C)
Note 2) fJ x 100 (%/"C)
VBR(25"C) • l>T
Note 3) M: Multiplication rate
Note 1) FU -12AP- N only

Type G1 -
Core dia. 50±3 11m
N.A. 0.2 -
Cladding dia. 125 ± 3 11m
Jacket dia. 0.9 mm
~ 0
'- ro
:s ~ -2
> Q)
.t:: <J)
> c
'<n. 0 -4
c 0.
<J)
o Q) Tc=25'C
0.
<J) a:: -6 ,t=1300nm
~ 0.2 M=10
-8 RL =500
-10
1000 1200 1400 1600 10 20 50 100 200 500 1000
Frequency (MHz)
Wavelength (nm)
Wavelength responslvity Frequency response
•... MITSUBISHI
7 - 98 . . . . ELECTRIC
FU-12AP-N, FU-32AP
100 10-4
f lMHz
,!
To 25"6
I
u:: 10-5 Tc 75"C
3
~
CD
"c 10 ...
C
~ ~
Ti
ro :; 10-6 145 "C ./
0.
ro
()
"
~
I'-.. ro
Cl
25"C ./
~
10-7
10 100
Reverse voltage (V)
/
Reverse voltage vs. Capacitance ~ I
10-8 0 10 20 30
Reverse voltage (V)
Reverse voltage vs. Dark current
• MITSUBISHI
"'ELECTRIC 7 - 99
FU-13AP-N
FU-13AP- N is detector module containing highly-

reliable InGaAs APD (Avalanche photodiode) module
for the long wavelength band (l-1.6.um) and has
high - speed response.
This module is used as detector for high-speed.
long haul optical communication systems.
FEATURES
• High - speed response (> 1GHz)
• Low capacitance
• Easy handling
FU·13AP·N

Reverse current IR 500 I1A
Operating case
Tc - 30-70 'c
temperature
Storage temperaturE Tstg - 40-70 'C

2-</>2.6 M8 x O. 75 Thread
--
r-
'S-
-
-
eo
'S-
\
~
~
'---'
1.3 15.8
8.8 16 23.8
\\
1 o-----@-o 2
'r3 (Case)
FU·13AP·N
. , MlTSUBISHI
7 -100 ..... ELECTRIC
FU-13AP-N

). = 1300nm. M = 1 (Note 2) - 0.8 -
Responsivity (Note 1) R A/W
,1. = 1550nm. M = 1 (Note 2) - 0.93 -
Breakdown voltage VDR 10 = 100IlA - 70 - V
Breakdown voltage at case temperature VBRt 10 = 100IlA. Tc = - 30-70"C - 0.17 - %/"C
Dark current 10 VR =0.9VDR - - 100 nA
,1. 1300nm
Excess noise factor F M=10 - MO., - -
f= 10MHz
,1. -l300nm
Cutoff frequency (- 3dB) fc M=lO 1 3 - GHz
RL = 50 Q
Capacitance Ct VR = O.9VBR. f = 1MHz - 1 - pF
Note 1) Fiber: GI type with core dia. 50 I'm and N.A. 0.2
Note 2) ,,!: Multiplication ratio
1. 2 r-------------------------------, 10-3
Tc=25"C
M=l
1.0 10-'
3
5 0. 8 ~ 10-5
0
t
>-
E
~
Photo ~rel1 ~ark current ~
.~ 0.6 :; c:
'00 (J 10-6 ..,0
r- /
c:
o
g
Q)
'"
.\,2
0.4 Vl
.a..,
-
Q;
~ > 10-7 100 :;
Q)
a: ~.-Z- ~
0.2
10-8 10
/ ~
10-9 0
Wavelength (nm) 20 40 60 80 100
Wavelength responslvlty Reverse bias (V)
Dark current, Photo current and
Multiplication factor vs. Reverse bias
4
f=lMHZ
vR=0.9v.R
\
\\
1
o
~ ........
20 40
--
60
-
80 100 120
Reverse Voltage (V)
Reverse voltage capacitance
• MITSUBISHI
FU-310AP
APO Module for Long Wavelel:1gth Band
FU-31OAP is detector module containing highly-

r~liable InGaAs APD (Avalanche photodiode) module
for the long wavelength band (l-1.6ttm) and has
high:" speed response.
This module is used as detector for high-speed.
long haul optical communication systems.
FEATURES
• High-speed response (> IGHz)
• Low capacitance
• Easy handling FU·310AP
ABSOLUTE MAXIMUM .RATINGS (Tc=25'C)

Reverse current IR 500 fJ.A
Operating case
Tc - 30-70 "C
temperature
Storage temperature Tstg - 40-70 "C
r
Fiber
CD 7
-e. u-i
-e. m
d
-e.
~== :::::::
,= =
\I r
\I ~
0.4 8.3 11
20 15 1000+600
\\
3 o------B>&--o 1
r2
FU·310AP
,. MITSUBISHI
7 -102 "'ELECTRIC
FU-310AP

A = 1300nm. M = 1 (Note 2) - 0.8 -
Responsivity (Note 1) R A/W
A = 1550nm, M = 1 (Note 2) - 0.93 -
Breakdown voltage VSR 10 = 100tlA - 70 - V
Breakdown voltage at case temperature VBRt 10 = 1ootlA, Tc = - 30-70'C - 0.17 - %/'C
Dark current 10 VR =0.9VBR - - 100 nA
A -1300nm
Excess noise factor F M=lO - M~7 - -
f = 10MHz
A -l300nm
Cu toff frequency (- 3dB) fc M= 10 1 3 - GHz
RL=50Q
Capacitance Ct VR = 0.9VBR, f = 1MHz - 1 - pF
Note 1) Flber. GI type wlth core dla. 50 11m and N.A. 0.2
Note 2) M: Multiplication ratio

Type GI -
Core dia. 50±3 tim
N.A. 0.2 -
Cladding dia. 125 ± 3 ,urn
Jacket dia. 0.9 mm
1.2,------------------, 10- 3
Tc=25"C
M=l
1.0 10-4
~
"-
O.S ~ B
S 10-5 "
~
Photo c:::renj ~ark current
~
C
~
.s; ~ c
0.6 :; 10-6 a
.;:;
'iii
"
c
0
0.
VJ
Q)
0.4
Q)
V>
Q; 10-7 ~
V 100 :;
'"
.!.1
Ci
.;:;
a: >
1
'""Z-
Q)
a: f-- ::;:
0.2
10-8 10
0 1.S
~
~
Wavelength (nm) 1
10-9 0 20 40 60 SO 100
Wavelength responsivity
. Reverse bias (V)
Dark current, Photo current and
Multiplication factor vs. Reverse bias
• MITSUBISHI
. . . . ELECTRIC 7 -103
FU-310AP
4
f=lMHZ
VR=0.9VBR
2
\ \
"-.. ..........
1
--
o 20 40 60 80 100 120
Reverse Voltage (V)
Reverse voltage vs. Capacitance
• MITSUBISHI
7 -104 . . . . ELECTRIC
MF-12SDS-TR113-006
Digital Optical Transceiver Module with Clock Recovery
MF-125DS-TR1l3-006 contains 1300nm lensed

surface-emitting LED and InGaAs PIN photodetector.
This transceiver combines both transmitting and
receiving functions in a single module with 50
micron core Fe-type fiber optic connectors. The
125 Mb / s (NRZ) data link offers clock recovery
and alarm output for link monitoring.
FEATURES
• High power 1300nm LED transmitter
• Wide dynamic range (16dB) receiver
• Loss budget of lldB (10- 10 BER)
• 125 Mb/s operation (NRZ~ MF·125DS·TR113·006
ABSOLUTE MAXIMUM RATINGS (TA=+25 °C)

Ratings
Items Symbols Units
Min. Max.
Power supply voltage VEE 0 -6.0 V
Input signal voltage Vi 0 VEE V
Operating temperature TA 0 +50 "C
Storage temperature Tstg -30 +70 "C
Humidity H 10 90 %
Soldering
I temperature Ts - 260 "C
I time ts - 10 Sec
CHARACTERISTICS (Tc=25 °C)

Signal bit rate BR 4B5B NRZI 125Mb/ s ± 50ppm -
Peak value
Optical output power PF Fiber : core 50um -20 - -15 dBm
NA 0.21
Wavelength ).p - 1270 1300 1380 nm
Spectral width D., - - 140 - nm
BER < 2.5 x 10- 10 -
Optical receiving level (peak value) PR -31 -15 dBm
DATA: PRBS2 1°-1
Input/ output interface - - DIFF. ECL (lOKH) -
Power supply voltage VEE - -5.46 -5.2 -4.94 V

Power supply current lEE VEE = - 5.2V - 650 750 rnA
Optical device - InGaAsP /InP LED/InGaAs PD -
• MITSUBISHI
. . . . ELECTRIC 7 -105
MF-12SDS-TR113-006
Digital Optical Transceiv~r Module with Clock Recovery
PIN FUNCTION
F"""== 1 DATA OUT
0= 2 ClK OUT
ITKOOT
~
3
1-
s;
00
cO
11 4
5
AlM OUT
-5.2V
[QJ
+1 6 DATA IN
~ 2!
::~
~i '"en 7 DATA IN
1-
;0 S 9
8 ENA IN
ENA IN
00
10 DATA OUT
11 GND1
12 GND2
(92) (4.8) 96 ±0.8 13 ACMOiJi
14 GND3
15 GND4
00
cO 16 GND5
-fi 0= =
=®~
+1 17 GND6
~ 18 GND7
-~
;0
d J~ ~ I ('0.635)
(21.9)1' 60.96 ±0.5 (2.54)
N
0
9 18
en
en
cO
+1
-HI- cO
+1
5i;
~
N
<.0
1 10 N
cO M
.".
cO
-B N
II
, .".
en
N
X
~
MF-12S0S-TR113-006
• MITSUBISHI
7 -106 ..... ELECTRIC "
MF-12S0S-TR113-006
BLOCK DIAGRAM
1--- -----1
OPT.II'Jj
I
---i -5.2V
----1 GND
MONITOR-OUT
I--I-----~~ elK-OUT
R-OUT
OPT.od
:=
IlED
d lED DRV I: .:~:'IN
I'
L ____________ --.-l
• MITSUBISHI
. . . . ELECTRIC 7 -107
MF-156DS-TR124-002/003
Dlgltal Optical Transceiver Module ytlth Clock Recovery
MF-156DS-TRI24-002/003 is a highJ>erformance
transceiver for CCITT SDH and ANSI SONET
application. It combines both transmitting' and
receiving function. and its optical devices are
InGaAsP LD and Ge APD.
This transceiver can operate with, single - 5.2V
power supply and offer "ENABLE" input to
shutdown the laser. "REC ALM" for optical
input signal detection and clock recovery.
FEATURES
• Operation I55.52Mb/ s (NRZ)
• CCITT SDH (STM - 1) compliant
• Transmitter and Receiver combines in one
package
• Compact package by monolithic specific IC
technology
• Transmitter- disable option
MF-1 56DS-TR124-003
• Receiver failed alarm option
• Single - 5.2V power supply
• ECL logic interface
ABSOLUTE MAXIMUM RATINGS (TA=+25°C)

Ratings
Items Symbols Units
Min. Max.
Power supply voltage VEE 0 -6 V
Input signal voltage VI 0 VEE V
Soldering
I time ts - 10 Sec
Operating ambient temperature TA +10 +55 "C
Relative Humidity * RH 10 90 %
* wi thou t making drops
• MITSUBISHI
7 -108 . . . . ELECTRIC
MF-1560S-TR124-002/003

PIN ASSIGNMENT
PIN No. FUNCTION
1.29.31.36.38.39.40 NC
2-13.15.16.19.20.
21.24.26.30.32.33. GND
35.37
14 REC AlM
17 VEE 1
18
22 DATA OUT
23 ClK OUT
25 VEE 3
27 ClK iN
100~~5
PC FC TYPE 28 DATA IN
POLISHING CONNECTOR 0_
34 ENABLE
~~
i~~~~~~r--------------',_o+~
+1
~ .I
-e.
380±25 38.3±2 Jtf.54±03'--t-- : ;
f-'---=---+--.:!2.:.:?:::..-~148. 26+0 .3--t;o. 64±0 I
(0000
20
40 21
(00 0 0 00)
MF·156DS·TR124·002/003
'.MITSUBISHI
. . . . ELECTRIC 7 -109
M:F-156DS-TR124-002/003
BLOCK DIAGRAM
28
DATA IN
~~*
27
LD
Driver
?
ClK IN lD·
34
ENABLE f t 1
APC
Circuit
22
DATA OUT DATA Receiver
23 Recovery Amp.
*
ClK OUT Circuit
APD
t
14 REC CLOCK
REC ALM AlM f-- Recovery j
Circuit Circuit
. ' . MITSUBISHI
7 -110 . . . . ELECTRIC
MF-1560S-TR124-002/003
CHARACTERISTICS
~me MF-I56DS-TRI24-()()2 MF-I56DS-TRI24-003
Items
Signal bit rate 155.52Mb / s ± 20ppm
Optical modulation Intensity Modulation
Line pattern/ code PN223 -1 unipolar NRZ
Optical device (transmitter) LD
Center wavelength 1285-1335mm
Spectral width 4nm (rms) 7.7nm (rms)
Optical output power -1--4dBm -9--12dBm
Optical device (receiver) APD
Receiver Sensitivity
-16dBm--37dBm - 9dBm- - 35dBm
(average value) PRBS 223 - 1
Bit error rate ~ 1 x 10-' :;; 1 X 10-'
Electrical interface *1 unipolar NRZ /ECL (lOKH compatible)
Optical interface FC connector SMlOI125
Power supply *2 -5.2V±5%
Power consumption 550mA max (TYP 460mA)
* I . Electrical input and output interface condition.
DATAIN~ DATAOUT~
~ ~
I I I
I I I
r
I I I
I I I
ClK IN
~: ~
t---l r-
~.
ClK O U T S U L J - L
JL td:;;±lns jL td:;; ±1.5nS
• 680 Q / - 5.2V pun down resistance is built in for DATA IN and CLK IN.
• 680 Q / - 5.2V pun down resistance is built in for E~ABLE input.
(ECL "H" disables the optical output power.)
• pun down resistance is not built in for DATA OUT, CLK OUT or REC ALM OUT. Please prepare 680 Q/- 5.2V for each signal by
customer's side.
(When optical input signal shuts down, REC ALM OUT changes from "L" to "H".)
* 2. Please reduce noise or ripple less than 10mVp· p at power supply input.
• MITSUBISHI
. . . . ELECTRIC 7 - 111
MF-622DF-T12-007 -011
Optical Transmitter and Receiver Module
FEATURES
MF-622DF- T12- 007
• 1.3,um multi-mode laser
• Application for interconnect distances less
than 2km
• 1-4 Standard
• Without cooler
MF-622DF-T12-008
• 1.3,um multi-mode laser
• Application for interconnect distances of
approximately 15km MF·622DF·T12·007
• S-4.1 Standard
• Without cooler
MF- 622DF- T12- 009 (without cooler)
MF-622DF-T12-010(with cooler)
• 1.3,um single-mode laserCDFB laser)
approximately 40km
• L-4.1a Standard
MF- 622DF- T12- 011
• 1.55,um single-mode laserCDFB laser)
approximately 60km
• L - 4.2 Standard
• With cooler
ABSOLUTE MAXIMUM RATINGS (TA=+25°C)

Ratings
Items Symbols Units
Min. Max.
Power supply voltage VEE 0 -6 V
Soldering
I time ts - 10 Sec
Storage temperature Tstg -20 +70 'c
* wIthout makmg drops
• .MITSUBISH.I
7 -112 "'ELECTRIC
M F-622DF-T12-007 -011
CHARACTERISTICS
MF-622DF-T12-010 MF-622DF-Il2-011
Items MF-622DF -T12-007 MF -622DF -T12-008 MF-622DF-Tl2-009 Units
(with Isolator) (with Isolator)
Bit Rate 622.08 Mb/s
Code NRZ -
Source MLM-LD MLM-LD DFB DFB DFB -
Optical Output Power ave. -15-- 8 -15--8 -4-0 -4-0 -4-+ 1 dBm
Center Wavelength 1270-1355 1270-1355 1270-1335 1270-1335 1530-1570 nm
Spectral Width ;>;35 ;>;2.5 - - - nm
Optical Fiber SMF -
Extinction Ratio E!; 10 dB
Mask Pattern CCITT Recommended Mask -
Max Dispersion Penalty 1 dB
Dispersion 11 80 110 110 250 ps/nm
Operating Temperature 0-55 0-55 0-55 0-55 0-55 OC
-5.2±5% -5.2±5% -5.2±5% -5.2±5% -5.2±5% V
200 max. 200 max. 200 max. 200max. 200 max. rnA
Power Supply
± 2 (for cooler) ± 2 (for cooler) V
1000 max. 1000 max. rnA
Functions Laser Bias Current Monitor. Laser Backface Monitor. Signal Disable. Optical Loss of Output -
• . MITSUBISHI
..... ELECTRIC 7 - 113
MF-622DF-T12-007-011

PIN ASSIGNMENT
Pin No. Paramete'r
16.2 63
1 GND
2 GND
3 -5.2V
r=== = = p= 4 -5.2V
f=
+ = 5 OPEN
1 12 6 GND
® 7 DATA
1~ 8 GND
{~
~
tEl 9 .
~~
cO GND
r- M
10 GND
11 GND
® 24 13 1+ 12 GND
f= + = 13 GND
'== = = '== 14 LASER BIAS CURRENT MONITOR(.)
l "lijijllij~lllll~ ~l
co 15 LASER BIAS CURRENT MON I TOR (-)
12.54 16 LASER BACKFACE MONITOR (+ )
17 LASER BACKFACE MONITOR (- )
27.94 18 SIGNAL DISABLE
...,1 19 GND
l
20 ALARM OUTPUT
21 TEMPERATURE MON ITOR (.) , /OPEN '
EBf 1/ ~ 22
23
TEMPERATURE MONITOR(-)' /OPEN'
COOLER (+)' /GND'
24 COOLER (-)' /GND'
1 With cooler
MF-622DF-T12-007/008/009 2 Without cooler
101.5
1t
~=
96.5
V-
2.5
M2.5
5.5
=]
r ",3.5
1 12
~[
@I ~
~
...,
0 co
cO
M ...,
cD en ~ co
24 13
:iF 'dr.
Z.54 I
~
co ;":
1-¢
11 N
I 27.94 36.83
r--
M
. .
l-~
co
DWDmDm
==4: 1l~
MF-622DF-T12-01 0/011
. • ... MITSUBISHI
7 -114 "'ELECTRIC
MF-622DS-R13-002/R14-002,003
FEATURES
MF-622DS- R13-002
• Operation is the 1.3 /.I. m wavelength window
• Low cost InGaAs PIN PD
• 1-4.1 Standard
MF-622DS-RI4-002
• Operation is the 1.3 /.I. m wavelength window
• Low cost Ge APD and wide dynamic range
• Both S-4.1 and L-4.1a Standard
MF-622DS- R14- 003
• Operation is the 1.55 f.l m wavelength window
• High sensitivity InGaAs APD
• L-4.2 Standard
ABSOLUTE MAXIMUM RATINGS (TA=+25 DC)

Ratings
Items Symbols Units
Min. Max.
VEE -6
Power supply voltage 0 V
Vee +6
I temperature Ts - 260 'C
Soldering
I time ts - 10 Sec
Storage temperature Tstg -20 +70 'C
* without makmg drops
CHARACTERISTICS
Items MF-622DS-R13-002 MF-622DS- R14-002 MF-622DS- R14-003 Units

I I
Bit Rate 622.08 ± 20ppm Mb/s
Line Pattern PN2 23-1 -
Code NRZ -
Wavelength Window 1310 I 1310 I 1550 nm
Optical Fiber MMF(GI501125)
Sensitivity " -23--8 I -29--8 I - 33--17 dBm
Jitter Tolerance CCITT Recommended Mask -
Operating Temperature 0-55 'C
Power Supply
-5.2±5%
500 max
+ 5.0 ±5%
100 max
I -5.2±5%
750max
+5.0±5%
100 max
V
rnA
Function Loss of Signal Status -
• MITSUBISHI"
"ELECTRIC 7 -115
MF-622DS-R13-002/R14-002,003
OUTLINE ORAWINGS Unit (mm)
PIN ASSIGNMENT
Pin No. Parameter
1 GND
10.9 106 2 LOSS OF SIGNAL
3 GND
4 OPEN
F= S GND
F=
.6 DATA OUTPUT
7 GND
=
i==' 8 OPEN
1 11
9 GND
10 CLOCK OUTPUT
r-
11 GND
en CD
r-
"
~
:.-- 12 GND
13 OPEN
{= 22 12 14 GND
i==' = 15 -S.2V
~
en 16 GND
I 17 OPEN
'== =
l~
18 GND
I 5.08
19 +S.OV
~ ~
28
I~
50.8 20 GND
_~nHHHI. 21 OPEN
22 OPEN
MF-622DS-R13-002
MF-622DS-R14-002,003
• MITSUBISHI
7 - 116 "ELECTRIC .
MF-20DF-TR014-002
Digital Optical Transciver
MF-20DF-TR014-002 is a fiber optic transciver

designed for operation at data rate 5-10Mb/ s
(Manchester code). It combines both transmitting
and resciving function.
FEATURES
• Transmitter and Receiver combines in one
package
• 5-10Mb/s operation (Manchester code. packet
data)
• High power 850nm LED optical output
• Wide dynamic renge (16dB)
• High Sensitivity (MIN-46dBm average value)
• Single + 5V power supply MF-20DF-TR014-002
• TTL input/output interface
ABSOLUTE MAXIMUM RATINGS (TA=+2S ee)
Ratings
Items Symbols Units
Min. Max.
Power supply voltage Vee 0 +6.0 V
Input signal voltage Vi 0 Vee V
Operating ambient temperature Ta 0 +60 "C
Storage temperature Tst -30 +70 "C
Relative Humidity *1 RH 10 85 %
Soldering
I time ts - 10 Sec
Optical input power *2 PA - -24 dBm
NOTES:
*1. without making drops
*2. average value

PIN ASSIGNMENT
PIN No. FUNCTION
13.17-24 RX GND
16 TX DATA
15 Vee (TX)
14 TX GND
4.6 N/C
7-12 RX GND
5 RX DATA
2.3 Vee (RX)
1 CASE GND
FC Type CONNECTOR
13 24
. . ----t-++- - ------+- - --+A
MF-20DF-TR014-002
'. MITSUBISHI
;"ELECTRIC 7 -117
MF-20DF-TR014-002
Digital Optical Transclver
CHARACTERISTICS (Tc::;25 °C)
Items Symbols Min. Typ. Max. Units

Signal bit rate (Manchester code) Br 5 - 10 Mb/s
Optical modulation· - Intensity modulation -
Center wavelength Ae 800 850 910 nm
Spectral width AI. - 45 60 nm
Optical output power (average value) *1 PI -17 -15.5 -14 dBm
Receiver Sensitivity (average value) Pr -46 - -30 dBm
Bit error rate BER 10-' -
Pulse distortion AW - - ± 15% %
Optical connector type - FC -OIPN (PC connector) -
Electrical interface Vi TTL -
Power supply *2 Vee +4.75 +5.0 +5.25 V
Power consumption lee - 250 340 rnA
NOTES:
*1. Test Optical Fiber: core dia. 50 11m. Clad dia. 125 11m. N.A.0.2. length 1m.
*2. Please reduce noise or ripple less than 50mVp- P at power supply input.
APPLICATIONS CASE FOR LOCAL AREA NETWORK
application case to use optical star coupler application case to use optical Divider
LAN node
Optical Divider LAN node

(Repeeter)
• MITSUBISHI
7 -118 "'ELECTRIC .
MF-32DF-T01 /R03
Digital Optical Transmitter/Receiver Module
The MF - 32DF - TO 1 / R03 is a fiber optic

transmitter / receiver pair designed for operation
at data rates from 3 to 32Mb/ s. The transmitter
includes a 850nm lensed LED. The receiver uses
an Si PIN photo detector . Both LED and
photodetector are coupled to a standard 50 micron
core FC - type connector.
MF·32DF·T01
FEATURES
• Dual- in -line - package
• High power 850nm LED transmitter
• Wide dynamic range receiver
• ECL input/ output interface
• 3Mb / s to 32Mb / s operation (NRZ)
ABSOLUTE MAXIMUM RATINGS (TA=25°C) MF·32DF·R03

Ratings
Items Symbols Units
Min. Max.
VEEl* 0 -6 V
Power supply voltage VCCI** 0 +6 V
VEE2** 0 -6 V
Input signal voltage Vi VEE 0 V
Operating temperature Tc 0 +50 "C
Soldering
I time ts - 10 Sec
* Transm!lter
* * Receiver
!
(O~
13.1 (R03)
MF·32DF·T01/R03
• MITSUBISHI
. . . . ELECTRIC 7 - 119
MF-32DF-T01/R03
Digital Optical Transmitter/Receiver Module
PIN ARRANGEMENT
n n
a
01
0 "" 0 D
I
"
c_{ "
GND 0 0 OND
0 0 "
BIN
BiN
BOUT
0
0
0
0 ""
0
0 AIN
Am
AOUT
D
a
"a
}"""
GND
SIN AOUT
S~
0
" BOUT "a R·OUT
R-OUT
GND
0
0 "" Vee
JI/tonltQr OUT
GND GND
·5 2V 012 130 GND -52V "a 12 13 + 5 V
(TOP VIEW) (TOP VIEW)
MF-32DF-T01 MF-32DF-R03
CHARACTERISTICS (TC=25 DC)

Signal bit rate BR NRZ(Duty ratio 40~60 %) 3 - 32 Mb/s
Peak value
Optical output power PF Fiber: core 50 {.tm -16 -14 -12 dBm
NAO.2
Wavelength AP - 780 840 880 nrn
Spectral width 6.J. - - 45 - nrn
BER < 10-'
Optical receiving level PR DATA: PRBS2!O-1 - 31 - -13 dBm
PEAK VALUE
Differential
Input/ output interface - ECL OR ECLlOK
IEEl" VEE! = - 5.2V - 200 240
Power supply current Icel"" Veel = 5V - 60 70 rnA
IEE2"" VEE2 = - 5.2V - 60 70
* TransmItter
* * Receiver
• MITSUBISHI
7 -120 ..... ELECTRIC
FC-01 PN-SMF, FC-01 PN·PC-SMF,
FC-01 PN·SPC-SMF,FC-01 RN{S)
Optical Connector with Singlemode Fiber
The optical fiber connector is used for optical fiber connections and also connections of optical fiber
and various components.
FC-01 PN-(L)-SMF, FC-01 PNW-(L)-SMF, FC-01 PN-(L)'PC-SMF, FC-01 PNW-(L)'PC-SMF

FC-01 PN-(L)'SPC-SMF, FC-01 PNW-(L)'SPC-SMF, FC-01 RN(S)
FEATURES
• Low coupling loss
• High reliabilit>:
CHARACTERISTICS
~
. Optical fiber connector plug with singlemode fiber Adapter
FC-OIPN-(L) FC-OIPNW- FC-OIPN-(L) FC-OIPNW- IF'C-OIPN-(L) FC-OIPNW- FC-OIRN(S)
-SMF (L)-SMF 'PC-SMF (L)'PC-SMF 'SPC-SMF (L)'SPC-SMF
Items (Note 2) (Note 3)
Coupling loss IdB Max. IdB Max. IdB Max. -

(Note 1) (Note 1) (Note 1)
Return loss - 27dB Max. 40dB Max. -
Number of times for > 1,000 times
connection
Temperature - 20-60"C
Humidity <95%
End surface of ferrule Flat Sphere (PC connector) ~phere (Super- PC connector) -
Note 1: Thls value lS for two optlcal connectors connected wlth adapter.
The values corresponding to singlemode fiber with mode field dia. 10 it m.
Note 2: L = optical- fiber cord length.
Note 3 : for connector plug with single mode fiber.
M8XO. 75 Thread
2-¢2.2X ¢4 Depth 1.5
FC-01 PN-(L)-SMF
FC-01 PN-(L)'PC-SMF
FC-01 PN-(L)'SPC-SMF
FC-01RN(S)
{ITEEI==.========<E+===LJ===L==--a::::F
I. L(m) 0
FC-01 PNW-(L)-SMF
L<lm: b.L=100mm
FC-01 PNW-(L)'PC-SMF lm;>L<2m: b.L=200mm
FC-01 PNW-(L)'SPC-SMF 2m;> L : b. L = O. 1 X L
• MITSUBISHI
..... ELECTRIC 7 - 121
; FC~01PN-SMF, FC-01 PN-PC-SMF,
FC-D1 PN-SPC-SMF,FC-01RN(S)
Optical Connector with Singlemode Fiber
ORDERING METHOD
Details for ordering are shown below. Please. advise the length of optical fiber cord and the number of units.
Model No. Optical fiber cord length Kinds of 'optical fiber End surface of ferrule
FC-01PN -(l)SMF '. 1m
FC-01PN-(3)SMF 3m
FC-01PN -(5)SMF 5m
FC-01PN -(L)SMF Assigned length Lm
Flat
FC-01PNW-(J)SMF 1m
FC-01PNW -(3)SMF 3m
FC-01PNW -(5)SMF 5m
FC-01PNW -(L)SMF Assigned length Lm
FC-01PN-(1)- PC-SMF 1m
FC-01PN-(3)- PC-SMF 3m
FC-01PN-(5)' PC-SMF 5m If not assigned. singlemode
FC-01PN -(L)- PC-SMF Assigned length Lm fiber with mode field dia. Sphere
FC-01PNW-(J)- PC-SMF 1m 10 J.l m standard will be (PC connector)
FC-01PNW-(3)- PC-SMF 3m supplied.
FC-01PNW-(5)- PC-SMF 5m
FC-01PNW-(L)- PC-SMF Assigned length Lm
FC-01PN-(1)- SPC-SMF 1m
FC-OIPN-(L)- SPC-SMF Assigned length Lm Sphere
FC-01PNW-(J)· SPC-SMF 1m (Super-PC connector)
FC-01PNW-(3)· SPC-SMF 3m
FC-01PNW-(5)· SPC-SMF 5m
FC-OIPNW-(LY· SPC-SMF Assigned length Lm
. .•. MITSUBISHI
7-122 "'ELECTRIC
FC-01 PN, FC-01 PN·PC,
FC-01 PN·SPC, FC-01 RN
Optical Connector with Multlmode Fiber
The optical fiber connector is used for optical fiber connections and also connections of optical fiber
and various components.
FC.01 PN·(L), FC·01 PNW·(L), FC·01 PN·(L)·PC, FC·01 PNW-(L)'PC

FC-01 PN-(L)'SPC, FC-01 PNW-(L)·SPC, FC-01 RN
FEATURES
• Low coupling loss
• High reliability
CHARACTERISTICS
~
Optical fiber connector plug with GI50/125 optical fiber Adapter
fC-OIPN-(L) FC-OIPNW- iFc-OlPN-(L) FC-OIPNW- FC-OIPN-(L) FC-OIPNW- FC-OIRN

Items (Note 2) (L) • PC (L) • PC • SPC (L) • SPC
Coupling loss IdB Max. 0.25dB Max. 0.25dB Max. -

(Note 1) (Note 1) (Note 1)
Return loss - 27dB Max. 40dB Max. -
Number of times for > 1.000 times
connection
Temperature - 20-6O"C
Humidity <95%
End surface of ferrule Flat Sphere (PC connector) ~phere (Super- PC connector) -
Note 1: ThIs value IS for two optlcal connectors connected wIth adapter.
The values corresponding to GI-50/125(core dia. 50 /lm. clad dia. 125/lm. N.A.0.2)optical fiber.
Note 2: L = optical-fiber cord length.
2-~2.2X ~4 Depth 1.5
FC-01 PN-(L)
FC-01 PN-(L)'PC
FC-01 PN-(L)'SPC
FC-01RN
+LlL
L(m) 0
FC-01 PNW-(L) L< 1m : ~L= 100mm

FC-01 PNW-(L)'PC lm;:;;;L<2m : ~L=200mm
FC-01 PNW-(L)'SPC 2m;:;;;L: ~L=O.l XL
'. MITSUBISHI
~ELECTRIC 7-123
FC-01 PN, FC-01 PN-PC, FC-01 PN-SPC, FC-01 RN
Optical Connector with Multimode Fiber
ORDERING METHOD
Details for ordering are shown below. Please. advise the length of optical fiber cord and the number of units.
Model No. Optical fiber cord length Kinds of optical fiber End surface of ferrule
FC-01PN-(1) 1m
FC-01PN-(3) 3m
FC-01PN-(5) 5m
FC-01PN-(L) Assigned length Lm
Flat
FC-OIPNW-(l) 1m
FC- OlPNW -(3) 3m
FC-01PNW-(5) 5m
FC-01PNW-(L) Assigned length Lm
FC-01PN-(1)- PC 1m
FC-01PN-(3)- PC 3m
FC-01PN -(5)- PC 5m
FC-01PN-(L)- PC Assigned length Lm If not assigned. type GI - 50/ Sphere
FC-01PNW-(l)- PC 1m 125 standard will be supplied (PC connector)
FC-01PNW-(3)- PC 3m
FC-01PNW-(5)- PC 5m
FC-OIPNW-(L)- PC Assigned length Lm
FC-01PN -(1)- SPC 1m
FC-01PN-(3)- SPC 3m
FC-01PN-(5)- SPC 5m
FC-01PN-(L)- SPC Assigned length Lm Sphere
FC-01PNW-(l)- SPC 1m (Super- PC connector)
FC-01PNW-(3)- SPC 3m
FC-01PNW-(5)- SPC 5m
FC-01PNW-(L)- SPC Assigned length Lm
• MITSUBISHI
. . . . ELECTRIC
CONTACT ADDRESSES FOR FURTHER INFORMATION
JAPAN==================== SOUTHWEST GERMANY==========
Overseas Marketing Division Mitsubishi Electronics America, Inc. Mitsubishi Electric Europe GmbH
Electronics Products 991 Knox Street Headquarters
Mitsubishi Electric Corporation Torrance, CA 90502 Gothaer Str. 8
2-3, Marunouchi 2-chome Telephone: (213) 515-3993 4030 Ratingen 1, Germany
Chiyoda-ku, Tokyo 100, Japan Facsimile: (213) 217-5781 Telephone: 2102-486-0
Telephone: (03) 3218-2676 Facsimile: 2102-486-367
(03) 3218-2863 SOUTH CENTRAL
Facsimile: (03) 3218-2852 Mitsubishi Electronics America, Inc. Mitsubishi Electric Europe GmbH
1501 Luna Road, Suite 124 Munich Office
HONG KONG =============== Carrollton, TX 75006 Fraunhoferstr. 9
Mitsubishi Electric (H.K.) Ltd. Telephone: (214) 484-1919 8045 Ismaning, Germany
41st fl., Manulife Tower, 169, Facsimile: (214) 243-0207 Telephone: 89-96079430
Electric Road, North Point, Hong Kong Facsimile: 89-96 07 94 11
Telex: 60800 MELCO HX NORTHERN
Telephone: 510-0555 Mitsubishi Electronics America, Inc. Mitsubishi Electric Europe GmbH
Facsimile: 510-9830,510-9822, 15612 Highway 7 # 243 Stuttgart Office '
510-9803 Minnetonka, MN 55345 Zettachring 12
Telephone: (612) 938-7779 7000 Stuttgart 80, Germany
SINGAPORE . = = = = = = = = = Facsimile: (612) 938-5125 Telephone: 711-728 74 70
MELCO SALES SINGAPORE PTE, Facsimile: 711-72 47 21
LTD. NORTH CENTRAL
307 Alexandra Road # 05-01 /02 Mitsubishi Electronics America, Inc. Mitsubishi Electric Europe GmbH
Mitsubishi Electric Building 800 N. Bierman Circle Heppenheim Office
Singapore 0315 Mt. Prospect, I L 60056 (Power Semiconductors)
Telex: RS 20845 MELCO Telephone: (312) 298-9223 M ozartstr. 80a
Telephone: 4732308 Facsimile: (312) 298-0567 6148 Heppenheim, Germany
Facsimile: 4738944 Telephone: 62 52-730 66
NORTHEAST Facsimile: 62 52-730 68
TAIWAN========== Mitsubishi Electronics America, Inc.
MELCO-TAIWAN CO., Ltd. 200 Unicorn Park Drive FRANCE==========
1 st fl., Chung-Ling Bldg., Woburn, MA 01801 Mitsubishi Electric France S. A.
363, Sec. 2, Fu-Hsing S Road, Telephone: (617) 932-5700 55, Avenue de Colmar
Taipei R.O.C. Facsimile: (617) 938-1075 92563 Rueil Malmaison Cedex, France
Telephone: (02) 735-3030 Telephone: 1-47. 08. 78. 00
Facsimile: (02) 735-6771 MID-ATLANTIC Facsimile: 1-47. 51. 36, 22
Telex: 25433 CHURYO "MELCO- Mitsubishi Electronics America, Inc.
TAIWAN" 800 Cottontail Lane ITALY============
Somerset, NJ 08873 Mitsubishi Electric Europe GmbH
U.S.A.========== Telephone: (201) 469-8833 Milano Branch Office
NORTHWEST Facsimile: (201) 469-1909 Centro Direzionale Colleoni
Mitsubishi Electronics America, Inc. Palazzo Perseo 2
1050 Ellst Arque,s Avenue SOUTH ATLANTIC 20041 Agrate Brianza
Sunnyvale, CA 94086 Mitsubishi Electronics America, Inc. Milano, Italy
Telephone: (408) 730-5900 2500 Gateway Center Blvd., Suite 300 Telephone: 39-605 31
Facsimile: (408) 730-4972 Morrisville. NC 27560 Facsimile: 39-605 32 12
Telephone: (404) 368-4850
SAN DIEGO Facsimile: (404) 662-5208 SWEDEN============
Mitsubishi Electronics America, Inc. Mitsubishi Electric Europe GmbH
16980 Via Tazon, Suite 220 SOUTHEAST Stockholm Office
San Diego, CA 92128 Mitsubishi Electronics America, Inc. Lastbilsvagen 6b
Telephone: (619) 451-9618 Town Executive Center 19149 Sollentuna, Sweden
Facsimile: (619) 592-0242 6100 Glades Road # 21 0 Telephone: 8-96 04 60
Boca Raton, FL 33433 Facsimile: 8-92 76 97
DENVER Telephone: (407) 487-7747
Mitsubishi Electronics America, Inc, Facsimile: (407) 487-2046 U.K. = = = = = = = = = = = = =
4600 South Ulster Street Mitsubishi Electric (U.K.) Ltd.
Metropoint Building, 7th Floor CANADA=============== Travellers Lane
Denver, CO 80237 Mitsubishi Electronics America, Inc. Hatfield
Telephone: (303) 740-6775 6185 Ordan Drive, Unit # 110 Herts AL10 8XB, England, U.K.
Facsimile: (303) 694-0613 Mississauga, Ontario, Canada L5T 2E1 Telephone: 707-27 61 00
Telephone: (416) 670-8711 Facsimile: 707 -27 86 92
Facsimile: (416) 670-8715
AUSTRALIA = = = = = = = = =
Mitsubishi Electronic Sales Canada, Mitsubishi Electric Australia Pty. Ltd.
Inc. 348 Victoria Road
340 March Road, Suite 502 Rydalmere Nsw 2116, Australia
Kanata, Ontario, Canada K2K 2E4 Private Bag No,2 Rydalmere Nsw 2116
Telephone: (613) 591-3348 Telex: MESYDAA 126614
Facsimile: (613) 591-3948 Telephone: (02) 684-7200
Facsimile: (02) 638-7072
• MITSUBISHI
. . . . ELECTRIC
MITSUBISHI OPTOELECTRONICS
OPTICAL SEMICONDUCTOR DEVICES and
OPTICAL-FIBER COMMUNICATION SYSTEMS
DATA BOOK
August. First Edition 1992

Editioned by
Committee of editing of Mitsubishi Semiconductor Data Book
Published by
Mitsubishi Electric Corp., Semiconductor Marketing Division
This book, or parts thereof, may not be reproduced in any form without permission of
Mitsubishi Electric Corporation.
© 1992 MITSUBISHI ELECTRIC CORPORATION Printed in Japan
MITSUBISHI OPTOELECTRONICS
OPTICAL SEMICONDUCTOR DEVICES and
OPTICAL-FIBER COMMUNICATION SYSTEMS
A MITSUBISHI ELECTRIC CORPORATION

HEA D OFFI CE MITSUBISHI DENKI BLDG MAR U NOUCHI. TO KYO 100 TELEX J2 4 532 CAB LE MELCO TOKYO
If these products or technologies

fall under Japanese and /or COCOM
strategic restri cti ons. di version
contrary thereto IS prohibited
New publication , effective Aug . 1992 .

H- OB026- A KI - 9208 Printed in Japan (TOT) Specifications subject to c hange Without notice .

1992 Mitsubishi Optical Semiconductor Devices

Uploaded by

Document Information

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

1992 Mitsubishi Optical Semiconductor Devices

Uploaded by

Copyright:

Available Formats

MITSUBISHI <lioliolYl

LIGHT EMITTING DIODES

OPTICAL-FIBER COMPONENTS GUIDANCE

OPTICAL-FIBER COMPONENTS DATA SHEET

D OPTICAL SEMICONDUCTORS COMPONENTS GUIDANCE page

D LIGHT EMITTING DIODES

II OPTICAL-FIBER COMPONENTS GUIDANCE

D OPTICAL-FIBER COMPONENTS DATA SHEET

" ' MITSUBISHI

Contact Addresses for Further Information

Device type {ML : Laser diode

* 1 Applicable from Jan. 1991.

Light Emitting Diode (LED)

20 ..... 1_~--1 ML5XX4

High Responsivity Photodiode (pinPD. APD)

PD2XXl X InGaAs- 'pinPO

ML5XX4 ......................... Pulse width 2 fJ. s, duty 0.2 %

[Application] [Main use] [ Wavelength] [ Rated optical output ] [ Series name ]

ML4XX3 (low droop)

Po=5mW ML4XX14 (low droop. small dispersion)

Po= BmW ML4XX 19* (":!ediuf!! output. small

ML5XX4 (pulse high output operation)

ML7XX1 A (pulse high output operation)

Information ML7XX3 (pulse high output operation)

ML9XX3 (pulse high output. operation)

Po= 5mW ML4XX5 (shortwave length)

Po= 5mW ML4XX15 (read only)

Po = 20mW ML6XX1 A (for mass-produced machine)

ML6XX 10 (small dispersion)

Po = 60mW ML6XX14** (low lop)

Po= 25mW ML5XX3A (for mass-produced machine)

Po= 35mW ML5XX5 (small dispersion)

*** ::New product

[Application] [Main use] [Wavelength] [Rated optical output] [ Series name ]

ML4XX10(higher reliability, multi-mode)

Po= 3.5mW ML3XXl (higher reliability)

Po= 10mW ML2XXl (higher reliability)

ME' XX3 (AIGaAs- LED, t/J '00 It miens)

Po=6mW ML8XXl (high-temperature operation,

Po= .12mW ML7XX5 (for analog use, DFB-LD)

(If = 120mA) ME7XX2 <lnGaAsP LED)

ML9XXl (high-temperature use,

Po= 12mW ML9XX5* '(for analog use, DFB- LD)

PD1XX2 (t/l200 It m Si-APD)

PD1XX5 (t/J 500 It m Si-APD)

PD2XXl (0500 It m Si-pinPD)

PD7XX5 (t/l80 It m lnGaAs- pinPD)

l000-lS00 PD7XXS (t/l300 It m InGaAs-pinPD)

PD7XX7* (t/l40 It m InGaAs- pinPD)

PD8XX2* (t/l50 It m InGaAs- APD)

r---t._l~480~~--------""i ML9XX4**(high power, high reliability)

*** ::New product

'. -·~I1f~~~;·f;i/':i;·I;'1~}., .~' .. ~~

ML5XX4 AIGaAs 20 '*2

ML6XX11 AIGaAs 35 4,5

*: New Product ** :Under development

• InGaAsP Laser Diodes

ML7XX6** InGaAsP Not specified (under development)

ML9XX1A InGaAsP 20 400mA

ML9XX4** InGaAsP Not specified (under development)

*: New product ** :Under development

*1: Duty;50%,f;100kHz *2: Pf(ilW.GI 50/125 OPtIcal FIber)

Mitsubishi Si avalanche photodiodes are high- performance optical detectors for

Mitsubishi InGaAs avalanche photodiodes are high - performance optical

1: Duty;50%,f;100kHz 2: Pf(ilW.GI 50/125 OPtIcal FIber)

Beam Splitter 1 ~t=======--""'r+=====v:;