4N25(G)V/ 4N35(G)V Series

Vishay Telefunken

Optocoupler with Phototransistor Output

Description
The 4N25(G)V/ 4N35(G)V series consists of a photo-
transistor optically coupled to a gallium arsenide
infrared-emitting diode in a 6-lead plastic dual inline
package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.

Applications
14827
Circuits for safe protective separation against
electrical shock according to safety class II
(reinforced isolation):

D For appl. class I – IV at mains voltage ≤ 300 V

D For appl. class I – III at mains voltage ≤ 600 V
according to VDE 0884, table 2, suitable for:

Switch-mode power supplies, line receiver,

computer peripheral interface, microprocessor
B C E
system interface.
6 5 4

VDE Standards 95 10805

These couplers perform safety functions according

to the following equipment standards:
1 2 3
D VDE 0884 A (+) C (–) n.c.
Optocoupler for electrical safety requirements
D IEC 950/EN 60950
Office machines (applied for reinforced isolation
for mains voltage ≤ 400 VRMS)
D VDE 0804
Telecommunication apparatus and data
processing
D IEC 65
Safety for mains-operated electronic and related
household apparatus

Order Instruction
Ordering Code CTR Ranking Remarks
4N25V/ 4N25GV1) >20%
4N35V/ 4N35GV1) >100%
1) G = Leadform 10.16 mm; G is not market on the body

86 Rev. A4, 11–Jan–99

 4N25(G)V/ 4N35(G)V Series
Vishay Telefunken

Features
Approvals: D Rated recurring peak voltage (repetitive)
D BSI: BS EN 41003, BS EN 60095 (BS 415), VIORM = 600 VRMS
BS EN 60950 (BS 7002), D Creepage current resistance according to
Certificate number 7081 and 7402 VDE 0303/IEC 112
D FIMKO (SETI): EN 60950, Comparative Tracking Index: CTI = 275
Certificate number 12399 D Thickness through insulation ≥ 0.75 mm
D Underwriters Laboratory (UL) 1577 recognized, General features:
file number E-76222
D VDE 0884, Certificate number 94778 D Isolation materials according to UL94-VO
D Pollution degree 2
VDE 0884 related features: (DIN/VDE 0110 part 1 resp. IEC 664)
D Rated impulse voltage (transient overvoltage) D Climatic classification 55/100/21 (IEC 68 part 1)
VIOTM = 6 kV peak D Special construction:
D Isolation test voltage Therefore, extra low coupling capacity of
(partial discharge test voltage) Vpd = 1.6 kV typical 0.2 pF, high Common Mode Rejection
D Rated isolation voltage (RMS includes DC) D Low temperature coefficient of CTR
VIOWM = 600 VRMS (848 V peak) D Coupling System A

Absolute Maximum Ratings

Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage VR 5 V
Forward current IF 60 mA
Forward surge current tp ≤ 10 ms IFSM 3 A
Power dissipation Tamb ≤ 25°C PV 100 mW
Junction temperature Tj 125 °C

Output (Detector)
Parameter Test Conditions Symbol Value Unit
Collector emitter voltage VCEO 32 V
Emitter collector voltage VCEO 7 V
Collector current IC 50 mA
Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA
Power dissipation Tamb ≤ 25°C PV 150 mW
Junction temperature Tj 125 °C

Coupler
Parameter Test Conditions Symbol Value Unit
Isolation test voltage (RMS) t = 1 min VIO 3.75 kV
Total power dissipation Tamb ≤ 25°C Ptot 250 mW
Ambient temperature range Tamb –55 to +100 °C
Storage temperature range Tstg –55 to +125 °C
Soldering temperature 2 mm from case, t ≤ 10 s Tsd 260 °C

Rev. A4, 11–Jan–99 87

4N25(G)V/ 4N35(G)V Series
Vishay Telefunken

Electrical Characteristics (Tamb = 25°C)

Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 50 mA VF 1.2 1.4 V
Tamb = 100°C
Junction capacitance VR = 0, f = 1 MHz Cj 50 pF

Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter voltage IC = 1 mA VCEO 32 V
Emitter collector voltage IE = 100 mA VECO 7 V
Collector emitter cut-off VCE = 10 V, IF = 0, ICEO 50 nA
current Tamb = 100°C
VCE = 30 V, IF = 0, ICEO 500 mA
Tamb = 100°C

Coupler
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter IF = 50 mA, IC = 2 mA VCEsat 0.3 V
saturation voltage
Cut-off frequency VCE = 5 V, IF = 10 mA, fc 110 kHz
RL = 100 W
Coupling capacitance f = 1 MHz Ck 1 pF

Current Transfer Ratio (CTR)

Parameter Test Conditions Type Symbol Min. Typ. Max. Unit
IC/IF VCE = 10 V, IF = 10 mA 4N25(G)V CTR 0.20 1
4N35(G)V CTR 1.00 1.5
VCE = 10 V, IF = 10 mA, 4N35(G)V CTR 0.40
Tamb = 100°C

88 Rev. A4, 11–Jan–99

 4N25(G)V/ 4N35(G)V Series
Vishay Telefunken

Maximum Safety Ratings (according to VDE 0884) see figure 1

This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters Test Conditions Symbol Value Unit
Forward current Isi 130 mA

Output (Detector)
Parameters Test Conditions Symbol Value Unit
Power dissipation Tamb ≤ 25°C Psi 265 mW

Coupler
Parameters Test Conditions Symbol Value Unit
Rated impulse voltage VIOTM 6 kV
Safety temperature Tsi 150

Insulation Rated Parameters (according to VDE 0884)

Parameter Test Conditions Symbol Min. Typ. Max. Unit
Partial discharge test voltage – 100%, ttest = 1 s Vpd 1.6 kV
Routine test
Partial discharge
g test voltage
g – tTr = 60 s, ttest = 10 s, VIOTM 6 kV
Lot test (sample test) (see figure 2) Vpd 1.3 kV
Insulation resistance VIO = 500 V RIO 1012 W
VIO = 500 V, RIO 1011 W
Tamb = 100°C
VIO = 500 V, RIO 109 W
Tamb = 150°C
(construction test only)
VIOTM
300
– Total Power Dissipation ( mW )

V t1, t2 = 1 to 10 s
250 Phototransistor t3, t4 = 1 s
Psi ( mW ) ttest = 10 s
tstres = 12 s
200
VPd

150 VIOWM
VIORM
100

50 IR-Diode
tot

Isi ( mA )
P

0
0 t3 ttest t4
0 25 50 75 100 125 150 t1 tTr = 60 s t2 tstres
94 9182 Tsi – Safety Temperature ( °C ) 13930
t

Figure 1. Derating diagram Figure 2. Test pulse diagram for sample test according to
DIN VDE 0884

Rev. A4, 11–Jan–99 89

4N25(G)V/ 4N35(G)V Series
Vishay Telefunken

Switching Characteristics of 4N25(G)V

Parameter Test Conditions Symbol Typ. Unit
Delay time VS = 5 V, IC = 5 mA, RL = 100 W ((see figure
g 3)) td 4.0 ms
Rise time tr 7.0 ms
Fall time tf 6.7 ms
Storage time ts 0.3 ms
Turn-on time ton 11.0 ms
Turn-off time toff 7.0 ms
Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kW ((see figure
g 4)) ton 25.0 ms
Turn-off time toff 42.5 ms
Switching Characteristics of 4N35(G)V
Parameter Test Conditions Symbol Typ. Unit
Delay time VS = 5 V, IC = 2 mA, RL = 100 W ((see figure
g 3)) td 2.5 ms
Rise time tr 3.0 ms
Fall time tf 4.2 ms
Storage time ts 0.3 ms
Turn-on time ton <10.0 ms
Turn-off time toff <10.0 ms
Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kW ((see figure
g 4)) ton 9.0 ms
Turn-off time toff 25.0 ms
IF IF +5V
0
IC = 5 mA/ 2 mA;
RG = 50 W
Adjusted through 96 11698
input amplitude IF
tp
T
+
0.01

tp = 50 ms
0
t
tp
Channel I
Oscilloscope
Channel II RL ≥ 1 M W IC

50 W 100 W
CL ≤ 20 pF 100%
90%
14950

Figure 3. Test circuit, non-saturated operation

IF IF = 10 mA +5V
0 10%
IC 0
RG = 50 W
t
tr
tp
T
+ 0.01 td ts tf

tp = 50 ms
ton toff
Channel I
Oscilloscope tp pulse dura- ts storage time
tion tf fall time
Channel II
RL ≥ 1 M W td delay time toff (= ts + tf) turn-off time
50 W 1 kW
CL ≤ 20 pF tr rise time
95 10844 ton (= td + tr) turn-on time

Figure 4. Test circuit, saturated operation Figure 5. Switching times

90 Rev. A4, 11–Jan–99

 4N25(G)V/ 4N35(G)V Series
Vishay Telefunken

Typical Characteristics (Tamb = 25_C, unless otherwise specified)

300 10000
Coupled device
P tot – Total Power Dissipation ( mW )

VCE=10V
250 IF=0

ICEO– Collector Dark Current,

1000

with open Base ( nA )

200
Phototransistor
150 100
IR-diode
100
10
50

0 1
0 40 80 120 0 10 20 30 40 50 60 70 80 90 100
96 11700 Tamb – Ambient Temperature ( 96 11875 Tamb – Ambient Temperature ( °C
°C ) )
Figure 6. Total Power Dissipation vs. Figure 9. Collector Dark Current vs.
Ambient Temperature Ambient Temperature

1000.0 1.000
VCB=10V
I CB – Collector Base Current ( mA )
I F – Forward Current ( mA )

100.0
0.100

10.0

0.010
1.0

0.1 0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 10 100
96 11862 VF – Forward Voltage ( V ) 96 11876 IF – Forward Current ( mA )
Figure 7. Forward Current vs. Forward Voltage Figure 10. Collector Base Current vs. Forward Current

1.5 100.00
CTR rel – Relative Current Transfer Ratio

1.4 VCE=10V VCE=10V

IF=10mA
1.3
IC – Collector Current ( mA )

10.00
1.2
1.1
1.0 1.00
0.9
0.8
0.10
0.7
0.6
0.5 0.01
–30 –20 –10 0 10 20 30 40 50 60 70 80 0.1 1.0 10.0 100.0
96 11874 Tamb – Ambient Temperature ( °C 96 11904 IF – Forward Current ( mA )
)
Figure 8. Relative Current Transfer Ratio vs. Figure 11. Collector Current vs. Forward Current
Ambient Temperature

Rev. A4, 11–Jan–99 91

4N25(G)V/ 4N35(G)V Series
Vishay Telefunken

100.0 1000

CTR – Current Transfer Ratio ( % )

IF=50mA 20mA VCE=20V
IC – Collector Current ( mA )

10.0 10mA 100

5mA

1.0 2mA 10

1mA

0.1 1
0.1 1.0 10.0 100.0 0.1 1 10 100
96 11905 VCE – Collector Emitter Voltage ( V 95 10976 IF – Forward Current ( mA )
)
Figure 12. Collector Current vs. Collector Emitter Voltage Figure 15. Current Transfer Ratio vs. Forward Current
VCEsat – Collector Emitter Saturation Voltage ( V )

1.0 t on / t off – Turn on / Turn off Time ( m s ) 50

Saturated Operation
0.8 40 VS=5V
RL=1kW
20%
0.6 30
CTR=50% toff
0.4 20

0.2 10
10%
ton
0 0
1 10 100 0 5 10 15 20
95 10972 IC – Collector Current ( mA ) 95 10974 IF – Forward Current ( mA )
Figure 13. Collector Emitter Saturation Voltage vs. Figure 16. Turn on / off Time vs. Forward Current
Collector Current

1000 20
t on / t off – Turn on / Turn off Time ( m s )

Non Saturated
Operation
800 VS=10V
RL=100W
hFE – DC Current Gain

15
VCE=10V
600 toff
5V 10
ton
400

5
200

0 0
0.01 0.1 1 10 100 0 2 4 6 8 10
95 10973 IC – Collector Current ( mA ) 95 10975 IC – Collector Current ( mA )
Figure 14. DC Current Gain vs. Collector Current Figure 17. Turn on / off Time vs. Collector Current

92 Rev. A4, 11–Jan–99

 4N25(G)V/ 4N35(G)V Series
Vishay Telefunken

Type

XXXXXX
Date
Code
918 A TK 63 Production
Location
(YM)
V
D E
0884 Safety
Logo

15090
Coupling Company
System Logo
Indicator
Figure 18. Marking example

Dimensions of 4N25G/ 4N35G in mm

y 8 mm
weight: ca. 0.50 g

y
creepage distance:
air path: 8 mm

after mounting on PC board

14771

Rev. A4, 11–Jan–99 93

4N25(G)V/ 4N35(G)V Series
Vishay Telefunken

Dimensions of 4N25/ 4N35 in mm

y 6 mm
weight: 0.50 g

y
creepage distance:
air path: 6 mm

after mounting on PC board

14770

94 Rev. A4, 11–Jan–99