Hard-Switched Silicon IGBTs?

Cut Switching Losses in Half with Silicon Carbide Schottky Diodes

by Jim Richmond
Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide (SiC) Schottky diode reduces the switching losses in the diode by 80% and the switching losses in the IGBT by 50%.

Introduction
The Silicon IGBT, which combines the output and switching characteristics of a bipolar transistor and the ease of control of a MOSFET, has become the power switch of choice for hard-switched, high-voltage (greater than 500 V) and high-power (greater than 500 watts) applications. Typical applications include motor-control inverters, uninterruptible power supplies, welding equipment and switched-mode power supplies (SMPS). The ever-increasing demand in power electronics for improved efficiency, reduced cooling, decreased size and weight, and stricter EMI/RFI and power quality requirements present new challenges to the designer. All of these requirements are greatly influenced by the high transient losses during IGBT turn-on when switching the inductive load found in hard-switched topologies. The reverse-recovery current present at turn-off of the silicon freewheeling diode directly affects this IGBT turn-on transient. To compound matters, the diode reverse-recovery current increases with increasing operating temperature, diode current, and di/dt. The diode reverse-recovery current and the IGBT switching losses can be drastically reduced by replacing the silicon freewheeling PiN diode with a SiC Schottky barrier diode (SBD). Due to the material properties of silicon, silicon Schottky diodes are not possible in the 200-plus volt range.

SiC Schottky Diodes

The SiC SBD is commercially available with 600-volt and 1200-volt ratings. The 600-volt diodes are available with 1-, 4-, 6-, 10-, and 20-amp current ratings. The 1200-volt diodes are available with 5- and 10-amp current ratings. The main advantage of a high-voltage SiC SBD lies in its superior dynamic performance. The reverse-recovery charge in the SiC SBD is extremely low and is the result of junction capacitance, not stored charge. Furthermore, unlike the Si PiN diode, it is independent of di/dt, forward current and temperature. The maximum junction temperature of 175C in the SiC SBD represents the actual useable temperature. The ultralow Qrr in SiC SBDs results in reduced switching losses in a typical hard-switched IGBT based application. This lowers the case temperature of the IGBT, improving the system efficiency and possibly allowing for a reduction in size of the silicon IGBT. In order to measure the benefit of these high-performance rectifiers, an inductive switching test circuit was used to measure the IGBT and diode switching losses. This allowed for a switching-loss comparison between an Ultrafast soft-recovery silicon diode and the Cree Zero recovery SBD, as well as the impact their reverse recovery has on the switching losses of an IGBT.

, Rev. B e: CPWR-AN03 Application Not

Switching Measurement
Figure 1 shows the inductive test circuit used for making the switching measurements. During operation, a double pulse is used to drive the IGBT gate. For the 600-volt device testing, a 10-ohm gate drive resistor is used to set the di/dt to 750 A/s. A 22-ohm resistor was used with the 1200-volt devices for a di/dt of 250 A/s. At time T1, the IGBT is turned on and current through the inductor ramps up until it reaches the desired test current at time T2. At time T2, the IGBT is turned off and the inductor current is transferred to the diode. The IGBT turn-off losses and diode turn-on losses are measured at the T2 transition. The inductor current continues to flow through the diode until the IGBT is turned back on at time T3. Now inductor current is transferred from the diode back to the IGBT. The IGBT turn-on losses and diode turn-off losses are measured at the T3 transition.

Subject to change without notice. www.cree.com/power

measurements. Duringdi/dt of 250 A/s. volt devices for a operation, a double pulse is used to drive the IGBT gate. For the 600 volt device testing a 10 ohm gate drive resistor is used to set the di/dt to 750 A/s. A 22 ohm resistor was used with the 1200 volt devices for a di/dt of 250 A/s.

V diode (volts)

400 300 200 100 0

900 800 700 V diode (volts) 600 500 400 300 200 100 0 -100 20 Power (kW) 15

25 20 15 10 5 0 -5 -10 -15 -20 -50 0 50 100 150 200 -25 250 I diode (A)

-5 -10 -15 -20 -25

-100 20 Power (kW) 15 10 5 0 -100

300

Time (ns)

10 Figure Figure 5 off -100

: 600-volt Si Ultrafast diode turn2. 600 volt Si Ultrafast diode turn-off voltage, current and instantaneous voltage, current and instantaneous power at 0 power at 50C. 150C.
-50 0 50 100 150 200 250 300

Figure 1. Inductive operating waveforms.

Test

Circuit

with

Figure At time T1, the test circuit with and : Inductive IGBT is turned on current through the inductor ramps up until it operating waveforms.

Power (kW)

inductor current is transferred to the diode. 600-Volt SwitchingIGBT is turned diode turn-on At time IGBTthe Comparison on and The T1, turn-off losses and current through the inductor ramps up until it losses are measured at the T2 transition. reaches theinductor test current for time to flow Switching parameters werecurrent continues T2.600-V The desired measured at a 15-A, Ultrafast soft-recovery IGBT is until(similar and is turned At time T2, the silicon diode the IGBT the would through the diode turned off to what be co-packaged in a 40-A transferred to the diode. 600inductor current is Ultrafast IGBT) and a 10-A, back on at time T3. Now inductor current is V SiC SBD, along with the switching losses of a 40-A, 600The IGBT turn-off losses and diode turn-on V silicon IGBT. The losses were measured at a voltage of losses are measured 500 V and current of 20 A. at the T2 transition. The inductor current continues to flow CPWR-AN03, Rev A through the the until the IGBT is turned Figure 2 shows diode turn-off voltage, current and instantaneous at timemeasured at a junction temperature back on power T3. Now inductor current is
of 150C of the Si Ultrafast diode. This shows a peak reverse-recovery current of 23 amps, a recovery time of 100 ns, and a peak instantaneous power of 7 kW. Also shown is the 200-voltRev A CPWR-AN03, overshoot caused by the high di/dt during the reverse-recovery snap-off.

Figure 1. Inductive Test Circuit with At waveforms. operatingtime T2, the IGBT is turned off and the

reaches the desired test current at time T2.

Figure 2 Time (ns) the turn-off voltage, shows Figure 3 is the turn-off waveforms for the SiC SBD at currentshowsinstantaneous power measured of 4 and a peak reverse recovery current 150C. This Figure 2. 600 volt Si Ultrafast diode turn-off at junction of 83%, a recovery time the Si C amps, aareduction temperature of 150 of of 33 ns, a voltage, current and instantaneous power at reduction of 67%, and This shows a peak reverse 0.5 a peak instantaneous power of ultrafast 150C. reductiondiode.to the SiC SBD only having to power is due kW, a recovery of 93%. The 23 amps, a recovery current of drastic reduction in switching dissipate the SiC SBD having voltage, which a power is due shows the capacitive charge, to a small Figure 2 100 ns, and turn-off instantaneous time of a peak to dissipate only small happens while the diode voltage is low. The currentcapacitive7charge, which happens while the diode and instantaneous power measured volt power of voltage is low. ThekW. Also shown is the indiode is voltage overshoot seen 200 Si diode voltage overshoot of seen in of Si the at a junction temperatureby the SiC thethe Siduring C overshoot causedwith 150 SBD. the high di/dt is completely eliminated completely eliminated with the SiC SBD. ultrafast diode. This shows a peak reverse the reverse recovery snap-off. recovery 900 current of 23 amps, a recovery 25 800 time of Figure 3 and a turn-off waveforms for the 100 ns, is the peak instantaneous 20 C. is the 200 a peak powerSiC 7SBD Also shown This showsvolt 15 of 700kW. at 150 600 10 reverse recovery current di/dt 4 amps, a overshoot500 caused by the high of during 5 reduction of 83%, a recovery time of 33 ns, the reverse recovery snap-off. 400 0 a 300 reduction of 67% and a -5 peak Figure 3 is the turn-off waveforms for reduction instantaneous power of 0.5 kW, a the -10 200 SiC SBD 100 150 drastic reductiona inpeak -15 at of 93%. The C. This shows switching 0 reverse recovery current of 4 amps, a -20 reduction -100 83%, a recovery time of 33 ns, -25 of 20 Page a reduction of 67% and a peak 2/9 15 instantaneous power of 0.5 kW, a reduction 10 of 93%. The drastic reduction in switching 5
V diode (volts) I diode (A) 0 -100 -50 0 50 100 Time (ns) 150

I diode (A)

diode (similar to what would be copackaged in a 40 A Comparison a 10 600 volt Switching ultrafast IGBT) and A, 600 V SiC SBD, along with the switching Switching parameters600 V measured for The losses of a 40A, were Silicon IGBT. a 15 A, 600 were measuredrecovery silicon500 V losses V ultrafast soft at a voltage of diode and currentto 20 A. would be co(similar of what packaged in a 40 A ultrafast IGBT) and a 10 25 900 A, 600 V800 SBD, along with the switching 20 SiC losses of700 40A, 600 V Silicon IGBT. The 15 a 600 losses were measured at a voltage of 500 V 10 500 5 and current of 20 A.

pea diss freq cau am

F curr at a IGB SBD 50% pow freq are resu

6 V IGBT (volts)

Page 2/9

200

250

300

Figure 3. 600 volt SiC SiC turn-off voltage, Figure 3: 600-volt SBD SBD turn-off voltage, and instantaneous power at 150 current current and instantaneous power C. at 150C.
800 700 600 V IGBT (volts) 500 400 300 200 45 40 35 25 20 I IGBT (A) 30

-1

-2

Copyright 2003-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree 100 and the Cree logo are registered trademarks of Cree, Inc.

CPWR-AN03, Rev. B

-100 -200

Cree, Inc. 15 4600 Silicon Drive Durham, NC 27703 10 USA Tel: +1.919.313.5300 5 Fax: +1.919.313.5778 www.cree.com/power

-5

Figu

Power (kW)

V IGBT (volts)

0 -100

600
-50 0 50 100 Time (ns) 150 200 250 300

35 30 25 20 15 10 5 I IGBT (A)

500 400 300 200 100 0

Figure 3. 600 volt SiC SBD turn-off voltage, current and instantaneous power at 150 C.
800 700 600 V IGBT (volts) 500 400 300 200 100 0 -100 -200 20 Power (kW) 15 45 40 35 30 25 20 15 10 5 0 -5 I IGBT (A)

Figure 5 shows the turn-on voltage, current and -100 0 instantaneous power measured at a junction temperature -200 -5 of 150C of the IGBT with a SiC SBD. The use of the SiC SBD 20 results in a peak current of 22 amps, a 50% reduction, and 15 a peak instantaneous power of 7.5 kW, a 50% reduction. The 10 high-frequency oscillations in the IGBT voltage are 5 also eliminated with the SiC SBD, resulting in reduced RFI/ 0 EMI generation.
Power (kW) -200 -150 -100 -50 0 50 100 150 200

APPLICATION NOTE

ing to which w. The ode is D.

10 peak instantaneous power of 15 kW is 5 dissipated in the IGBT. Also shown are high 0 frequency oscillations0 in 50 100 150 voltage the IGBT 200 -200 -150 -100 -50 Time (ns) caused when the Si diode snaps off. This is a major 600 volt RFI/EMI generation. Figure 4.cause of IGBT turn-on w/ Si Ultrafast Figure 4: 600-volt IGBT turn-on with Si

A comparison of the switching parameters of the SiC SDB with the Si Ultrafast diode are shown for measurements Figure a junction IGBT turn-on 25C in Table taken at5. 600 volt temperature of w/ SiC SBD, 1 and for voltage, current andat a junction temperature of 150C in measurements taken instantaneous power at 150C. Table 2. The total switching-loss reduction (IGBT + Diode) is calculated to be 52% at 25C and 56% at 150C.

Time (ns)

5 I diode (A)

current and instantaneous power measured at a junction shows the of 150 of the temperature C Figure Figure 4 the turn-on turn-on voltage, and 4 voltage, current IGBT shows SiC SBD. The use measured with current andainstantaneous power of the SiC instantaneous power measured at a junction temperature SBD the IGBT a peak current 150 amps, a at ofresults with a Si Ultrafast 22C During of 150Ca junctionintemperature of of diode.of the the 50% with diode reverse-recovery current is added IGBT IGBT reduction, ultrafast diode. During the turn-on, the a Si and a peak instantaneous power of 7.5 kW, a 50% inreverse The high to the IGBT turn-on the diodereduction. recovery 44 a peak current of IGBT current, resulting amps.frequency oscillationspower of IGBT voltage A peak instantaneous in the 15 kW is dissipated current is added to the IGBT current, in theare also eliminated high-frequency oscillations in IGBT. Also shown are with resulting in a peak current the SiC SBD, the IGBT voltage caused when the Siof 44 amps.off. This diode snaps A resulting inof RFI/EMIRFI/EMI generation. reduced generation. is a major cause
800 45 40 35 30 25 20 15 10 5 0 -5 I IGBT (A)

Ultrafast diode, current and instantaneous diode, voltage, current and instantaneous Figure 5 shows the turn-on voltage, power at 150 power at 150C. C.

A comparison of the switching = 20A, V parameters of Ithe SiC= 500V, Rg = 10 ohmthe Si SDB with Parameter Units Si Pin SiC % ultrafast diode are shown for measurements Reduction Peak Reverse a junction Ipr (A) 13 4 C taken at current temperature of 25 in 69% Reverse 1 and for Trr (nS) 83 30 Table recovery time measurements taken at a 64% Recovery Charge Qrr (nC) 150 560 78 junction temperature of C in Table 2. 86% Diode total switching Diode (mJ) Eoff loss reduction (IGBT + 0.11 0.02 82% The loss turn-off Diode loss turn-on Eon to (mJ) 0.03 0.02 Diode) is calculated Diodebe 52% at 25 and 33% C Diode at 150 0.14 0.04 71% 56% loss total C. Ets Diode (mJ)
C CC

IGBT loss turn-on IGBT loss turn-off IGBT loss total loss total

Eon IGBT (mJ) Eoff IGBT (mJ) Ets IGBT (mJ) Ets (mJ)

0.63 0.46 1.09 1.23

0.23 0.32 0.55 0.59

63% 30% 50% 52%

Table : 600 volt-switching parameter comparison between Si Ultrafast and SiC SBD at 5C.
IC = 20A, VCC = 500V, Rg = 10 ohm Parameter Peak Reverse current Reverse recovery time Recovery Charge Diode loss turn-off Diode loss turn-on Diode loss total IGBT loss turn-on IGBT loss turn-off IGBT loss total loss total Units Ipr (A) Trr (nS) Qrr (nC) Eoff Diode (mJ) Eon Diode (mJ) Ets Diode (mJ) Eon IGBT (mJ) Eoff IGBT (mJ) Ets IGBT (mJ) Ets (mJ) Si Pin 23 100 1220 0.23 0.03 0.26 0.94 0.89 0.89 2.09 SiC % Page 3/9 Reduction 4 83% 67% 93% 91% 33% 85% 74% 28% 28% 56% 33 82 0.02 0.02 0.04 0.24 0.64 0.64 0.92

CPWR-AN03, Rev A
700 600 500 400 300 200 100 0 -100 -200 20 Power (kW) I IGBT (A) 15 10 5 0 -200 -150 -100 -50 0 Time (ns) 50 100 150 V IGBT (volts)

oltage, C.
45 40 35 30 25 20 15 10 5 0 -5

Table : 600-volt switching parameter comparison between Si Ultrafast and SiC SBD at 50C.
200

Figure 5. 600 volt IGBT turn-on w/ SiC SBD, Figure 5: 600-volt IGBT turn-on w/ SiC SBD, voltage, current and instantaneous voltage, current and instantaneous power at power at 50C. 150C.

Figure 6 shows the turn-off currents of the Si Ultrafast diode and the SiC SBD at 25C and 150C superimposed on one plot. The SiC SBD is unchanged with temperature, with a peak reverse current of 5 amps. The Si Ultrafast diode shows strong temperature dependence, increasing from 13 amps at 25C to 23 amps at 150C.

A comparison of the switching parameters of the SiC SDB with the Si 0 ultrafast diode are shown for measurements taken at a junction temperature of 25 in C Table 1 and for measurements taken at a rafast junction temperature reserved. The in Table 2. C neous Copyright 2003-2006 Cree, Inc. All rightsof 150 information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. The total switching loss reduction (IGBT + 3 CPWR-AN03, Rev. B Diode) is calculated to be 52% at 25 and C ltage, 56% at 150 C.

Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/power

APPLICATION NOTE
Diode Switching Losses (watts) Diode Switching Losses (watts)
30 25 20 15 10 I Diode (A) 5 30 0 25 -5 20 -10 15 -15 10 -20 I Diode (A) 5 -25 0 -30 -200 -5 -10
Si Ultrafast Diode @ 150C Si Ultrafast Diode @ 25C SiC SBD @ 25C and 150C SiC SBD @ 25C and 150C

duction 9% 4% 6% 2% 3% 1% 3% 0% 0% eduction 2% 69% 64% meter 86% 82% d SiC 33% 71% 63% 30% 50% duction 52% 3%

APPLICATION NOTE

Figure 8 shows the total diode switching losses (turn-on Si Ultrafast Diode and turn-off) in watts 150C switching frequencies from 10 at 25 kHz to 100 kHz and 100C temperatures of 50, 100 and 150C. The SBD has significantly lower switching losses (up to 20 50C an 85% reduction) and shows no change with increased temperature. 15
30 10 25 5 20 0 15 10 10 20
50C 150C 100C Si Ultrafast Diode

30

1200

SiC SBD

30

40

50

60

70

80

90

100

Switching Frequency (kHz)

nts of BD at plot. meter with d SiC ent of trong from nts of BD at nts of e plot. a with SiC ed on ent of T with strong with from IGBT trong nts of verse a SiC f the ed on T with with IGBT strong verse f the

I IGBT (A)

25 50 20 45 15 40 10 35 5 30 0
w/ Si Ultrafast Diode @ 25C w/ SBD @ 25C and 150C w/ Si Ultrafast Diode @ 150C

V diode (volts)

7% 3% meter 1% d SiC 3% 5% 4% 8% 2% eduction 6% 83% 67% meter 93% 91% d SiC 33% 85% 74% 28% 52% 56%

-150

-100

-50

0 Time (ns)

50

100

150

200

Figure 8: 600 volt switching power loss of the 5Si Ultrafast diode and theSiC SBD at 50 SBD C, 100C, and 150 C.

Si Ultrafast Diode @ 25C

-15 Figure 6: 600-volt turn-off current the Si Figure 6: 600 volt turn off current of of the Si Ultrafast diode the SiC SBD at 25 5C Ultrafast diode andand the SiC SBD atC and -20 and 50C. 150C. Si Ultrafast Diode @ 150C -25

Figure 7 50-200 -150 -100 -50 currents of the IGBT with shows the turn-on 0 50 100 150 200 w/ Si Ultrafast Diode SiC 150C a Si Ultrafast diode and a @Time SBD at 25C and 150C, (ns) 45 superimposed on one plot. The peak current in the IGBT w/ 40 with the SiC SBD Si Ultrafast Diode @ 25Coff current of the Si peak is unchanged Figure 6: 600 volt turn with temperature. The current of the IGBT with the Si Ultrafast diode shows strong 35 Ultrafast diode and the SiC SBD at 25 and C temperature dependence due to the reverse-recovery 150C. 30 temperature dependence of the diode.

-30

20 -10 -200 15 10

-150

-100

-50

0 Time (ns)

50

100

150

200

IGBT Switching Losses IGBT Switching Losses (watts) (watts)

I IGBT (A)

25 -5

Figure 930 40 the total IGBT switching shows 50 60 70 80 90 100 10 20 Switching turn-off) losses (turn-on and Frequency (kHz)in watts at switching frequencies from 10 kHz to 100 Figure 8: 600 volt switching power loss of Figure 8: 600-volt switching power loss of kHz at 50, 100 and 150 C. The IGBT the Si Ultrafast diode and the the Si Ultrafast diode and the SBD at 50C, at 50 C, switching loss C. with the SiC SBD is about 00C, and 50C. 100C, and 150 half that of the IGBT with the Si ultrafast Figure 9 shows the total with total IGBT SBD also Figure shows the switching losses (turn-on diode. The9 IGBT IGBT the SiC switching and turn-off) (turn-on and turn-off) in watts from 10 in losses less watts at switching frequencieswith shows increase in switching losses at kHz to 100 kHz at 50, 100 and 150C. The IGBT switching switching frequencies from 10 dependence with kHz to 100 temperature. The about half that loss with the SiC SBD is temperature of the IGBT kHz atswitching The IGBTthe the SiC the C. of the 50, 100 and in with The IGBT the Si Ultrafast diode. losses 150 IGBT with SBD also switching is due tothe losses within about shows lessSBD lossin switchingSiC SBD istemperature. SiC increase with the increase IGBT The temperature dependence withthe switching losses in half that timethe IGBT of the Si ultrafast turn-off of since the turn-on losses are the IGBT with the IGBT with due toSiC increase in IGBT diode. The with SBD is the the SBD also unchanged SiC temperature. This dramatic turn-off time since the turn-on losses are unchanged with shows less increase in switching losses with improvement in the IGBT switching temperature. This dramatic improvement in the IGBT temperature. is due due solely to the absence of performance The temperature dependence switching performance is solely to the absence of of recovery in the SiC SBD. SBD. reverse recovery in the SiC reverse the switching losses in the IGBT with the SiC SBD is due to the increase in IGBT 200 turn-off time since the turn-on Diode losses are Si Ultrafast 180 150C unchanged with temperature. This dramatic 160 improvement 100C the IGBT switching in 140 performance50C due solely to the absence of is 120 reverse recovery in the SiC SBD.
100 200 80 180 60 160 40
150C Si Ultrafast Diode

meas recov be co and 1200 switc The l meas 1000 recov temp be co since and a runaw switch The l curre 1000 at a j tempe ultraf since recov runaw of 14 of 2.8 curre the 6 at a ju due t ultrafa lower recov 1400 of 14 1200 of 2.8 1000 the 60 800 due to 600 lower

400 1400 200 1200 0 1000 -200 800 12 600 10 8 400 6 4 200 2 0 0

100C SiC SBD Figure 8 shows the total diode 140 20 -10 50C switching losses (turn-on and turn-off) in 120 0 0 -200 -150 -100 -50 0 50 100 150 200 watts at switching frequencies from 10 kHz 20 30 40 50 60 70 80 90 100 100 10 Time (ns) to 100 7: 600 volttemperatures ofof the100 and kHz and turn-on current 50, IGBT w/ Switching Frequency (kHz) 80 Figure Figure 7:The SBD turn-on current of the 600-volt has 150 Ultrafast diode and the significantly lower C. the Si SiC SBD at 25 and C 60 Figure 9: 600-volt IGBT switching power Figure 9: 600 volt IGBT switching power loss IGBT w/ Figure switching the Si Ultrafastan 85% reduction) losses (up to diode and the SiC 150 C. 40 loss with the Si Ultrafast diode and SBD at SBD at 5C and 50C. w/ the Si Ultrafast diode and theSBD the SiC SiC off vo SiC and shows no change with increased SBD 100 and 150 and 5020 at 50C, 00C, C. 50C. C, C, Figure 8 shows the total diode at 125 temperature. 0 switching losses (turn-on and turn-off) in 10 20 30 40 50 60 70 80 90 100 watts at switching frequencies from 10 kHz Switching Frequency (kHz) to 100 kHz and temperatures of 50, 100 and Figure 9: 600 volt IGBT switching power loss 150 C. The SBD has significantly lower Cree, w/ the Si Ultrafast diode and the SiC SBD Silicon Drive at Inc. switching losses (up to an 85% reduction) 4600 CPWR-AN03, Rev C. A Copyright 2003-2006 Cree, Inc. All rights reserved. The information in4/9document is subject50 to change without notice. 150 Durham, NC 27703 C, 100 and Cree C, and shows no change with Page this increased and the Cree logo are registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 temperature. www.cree.com/power

-5

Figur 8 6 off vo 4 at 125 2

CPWR-AN03, Rev. B

Power (kW)

w/ SBD @ the IGBT Figure 7: 600 volt turn-on current of 25C and 150C w/ 5 the Si Ultrafast diode and the SiC SBD at 25 and C 150 0 C.

V diode (volts) Power (kW)

-200

12 10

1200 volt Switching Comparison

The switching parameters were measured for an 8A, 1200 V ultrafast soft recovery silicon diode (similar to what would be co-packaged in an 11 A ultrafast IGBT) and a 5 A, 1200 VComparisonwith the 00-Volt Switching SBD, along switching losses of a 11 A, 1200 V IGBT. The losses were measured at a voltage of The switching parameters were measured for an 8-A, 1000 V and current of 5 A. The maximum 1200-V Ultrafast soft-recovery silicon diode (similar to temperature used in this 11-A Ultrafast IGBT) C what would be co-packaged in an testing was 125 and a 5-A,since the IGBT started the switching thermal an 1200-V SBD, along with going into losses of 11-A, runaway when biased at 150 1200-V IGBT. The losses were measured at a voltage C.
1400 1200 1000 V diode (volts) diode (volts) V 800 1400 600 1200 400 1000 200 800 0 600 -200 400 6 4 2 I diode (A) 0 6 -2 4 -4 2 -6 0 -8 -2 -10 -4

100

Power (kW)

oss of of 1000 V and current of 5 A. The maximum temperature Figure 10 shows the turn-off voltage, 50 C, used in this testing was 125C since the IGBT started going current and instantaneous power measured into thermal runaway when biased at 150C.

V IGBT (volts)V IGBT (volts)

with turnis ad peak with a insta turn-o in the is ad 120 peak 100 insta 80 in the

I diode (A)

tching tts at o 100 IGBT about rafast D also s with dence th the IGBT s are amatic tching nce of

1400 1200 1000 V diode (volts) 800 600 400 200 0 -200 12 10 8 6 4 2 0 -150

6 4 2 I diode (A) 0 -2 -4 -6 -8 -10

F SBD, powe

V IGBT (volts)V IGBT (volts)

800

-100

-50

50

100

150

200

250

1000 400 800 200 600 0 400 -200 200 12 10 0 8 6 -200 4 2 12 0 10 8-200

10 4 8 2 6 0 4 -2 2 0 -2

Time (ns)

Figure 10. 1200 volt Si Si Ultrafast diode Figure 0: 00-volt Ultrafast diode turnturn-off voltage, current and instantaneous off voltage, current and instantaneous power power at 5C.

at 125 C.

Figure 11 is the turn-off waveforms for the SiC SBD at 125C. This shows a peak reverse-recovery current of 1 amp, a reduction of 83%, a recovery time of 30 ns, a er loss reduction of 80%, and a peak instantaneous power of 0.3 SBD at kW, a reduction of 89%. The drastic reduction in switching power is due to the capacitive charge of the SBD dissipating while the diode voltage is low.

100

Power (kW)

Power (kW)

-150

-100

-50

50

100

150

200

6 Time (ns) 4 2 Figure 12. 1200 volt IGBT turn-on with Figure : 00-volt IGBT turn-on w/ Si 0 Ultrafast -150 diode, voltage, current and diode, Si Ultrafast -100 -50 voltage, 100current and -200 0 50 150 200

instantaneous power at(ns) C. instantaneous power at 5C. Time 125

Page 5/9

Figure 13 shows the turn-on voltage, current and Ultrafast diode, power measured at a and and instantaneous voltage,a current instantaneous power power at 125 junction temperature at C. instantaneous measured125 for the IGBT junctionthe IGBT with of SBD.C of 125C for temperature a The use of the SBD

Figure 12. 1200 volt IGBT turn-on w/ Si Figure 12 is the turn-on voltage, current

Figure 12 is the turn-on voltage, current and instantaneous power measured at a CPWR-AN03, Rev of junction temperature A 125 for the IGBT C

Copyright 2003-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.

CPWR-AN03, Rev A

CPWR-AN03, Rev. B

Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/power

I IGBT (A)

I IGBT (A)

1200 600

12 6

IGBT Fi resul curre redu at a of 6.2 IGBT resulF reduc the S of 6.2 25 C The F temp the S 1 am 25 C stron The from temp The 1 am diode stron nS a from the r The temp diode nS a the temp

FF SBD, curre powe at a

Power (kW)

Power (kW)

Figureultrafast diode. This showsvoltage, current and 10 shows the turn-off a peak reverse instantaneous power measured at a junction temperature recovery current of 6 amps, a recovery time of 125C for the Si Ultrafast diode. This shows a peak of 148 ns, current of 6 amps, a recovery time reverse-recovery and a peak instantaneous power of of 2.8 a peak instantaneous power seen kW. 148 ns, and kW. The voltage overshoot of 2.8 with The voltage overshoot seen withis not pronounced here not the 600 volt Si diode the 600-volt Si diode is pronounced here due tovolt testing being done at adone due to the 1200 the 1200-volt testing being at a lower di/dt (250 A/s vs. 750 A/s). lower di/dt (250 A/s vs. 750 A/s).

at a junction temperature of 125 for the Si C

Figure 11 is the turn-off waveforms for Figure : 00-volt This SBD voltage, Figure 11. 1200 volt SiC SBD turn-offturn-off the SiC SBD at 125 SiC shows a peak C. current and instantaneous power at 125 a C voltage, current and instantaneous power reverse recovery current of 1 amp, at 5C. reduction 11 83%, a recoverywaveforms ns, Figure of is the turn-off time of 30 for a SiC reduction 125 This shows peak the is theSBD at of 80% and a a peak C. Figure 12 turn-on voltage, current a instantaneous instantaneous power of 0.3 kW,andreduction reverse recovery current of 1 125C a power measured at a junction temperature ofamp, for the of 89%. The drasticrecovery time switching reduction in IGBT turn-on, IGBT reduction Ultrafast diode. During the of 30 ns, with a Si of 83%, a power is due to of capacitive chargetopeak IGBT the 80% and a ofthe the the diode reduction a reverse-recovery current is added SBD dissipating while the diode voltage A peak current, resulting in a peak current kW, a reduction instantaneous power of 0.3 of 11.7 amps. is instantaneous powerdrastic reduction in switching low. of 89%. The of 11 kW is dissipated in the IGBT. power is due to the capacitive charge of the 1200 12 SBD dissipating while the diode voltage is 1000 10 low.

Power (kW)

200 -6 12 10 0 -8 8 6 -200 -10 4 2 12 0 10 8-150 -100 -50 0 50 100 150 200 250 6 Time (ns) 4 2 Figure 11. 1200 volt SiC SBD turn-off voltage, 0 current and instantaneous power200 125 at 250 C -150 -100 -50 0 50 100 150 Time (ns) Power (kW)

120 60

100 40

80 20

60

40 -20

20 1 1

-20

1 1

APPLICATION NOTE
with a Si ultrafast diode. During the IGBT turn-on the diode reverse recovery current is added to the IGBT current, resulting in a peak current of 11.7 amps. A peak results in a peak current of 6.7 amps, a 42% reduction, and instantaneous power of 11 kW is dissipated a peak instantaneous power of 6.2 kW, a 44% reduction. in the IGBT.
1200 1000 V IGBT (volts) 800 600 400 200 0 -200 12 10 8 6 4 2 0 -200 12 10 8 6 4 2 0 -2 I IGBT (A)

Ultrafast diode and the SiC SBD at 25 and C 125C.

2 I diode (A)

-2

-4

-6

-8

-10

Figure 15 shows the turn on currents of the IGBT with a Si ultrafast diode and the SiC SBD at 25 and 125 superimposed C C Figure 15one plot. The peak current of the IGBT with a on shows the turn-on currents in the IGBT Si Ultrafast the SiC SBDSiC SBD at 25C and 125C with diode and the is unchanged with superimposed on one plot. Thecurrent and reverse IGBT temperature. The peak peak current in the with the SiC SBD is unchanged with temperature. The peak recovery time of the IGBT with the Si current and reverse-recovery time of the IGBT with the Si ultrafast shows a strong temperature dependence Ultrafast diode diode shows a strong temperature dependence due to temperature recovery due to the reverse-recovery the reverse dependence of the diode. temperature dependence of the diode.
14 12
w/ Si Ultrafast Diode @ 125C

Diode Diode Dio IGBT IGBT IGB

Table comp SBD

P Peak r Revers Rec Diode Diode Dio IGBT IGBT IGB

10
w/ Si Ultrafast Diode @ 25C

Power (kW)

I IGBT (A)

ltage, C

8 6 4 2 0 -2 -200
w/ SBD @ 25C and 125C

Table comp SBD

6 4 2 0

I IGBT (A)

ms for peak -150 -100 -50 0 50 100 150 200 mp, a Time (ns) 30 ns, Figure 3: 00-volt IGBT turn-on with SiC peak Figure 13. 1200 volt IGBT turn-on w/SiC SBD, voltage, current and instantaneous uction SBD, voltage, current and instantaneous power at 125 power at 5C. C. ching the turn-off currents of of the Figure 14 shows 13 shows the turn-onthe Si Ultrafast Figure voltage, and the SiC SBD at 25C and 125C superimposed ge is diode current and instantaneous power measured on one plot. The SiC SBD is unchanged with temperature, at a junction current of amp. The Si the C with a peak reversetemperature1 of 125 for Ultrafast diode IGBT with a SBD. The use of the increasing shows a strong temperature dependence, SBD 12 from results in a 25C to 6 amps 6.7150C. The reverse 5 amps at peak current of at amps, a 42% 10 recovery time of and Si Ultrafast diode increases from 100 reduction the a peak instantaneous power 8 ns at 25C to 148 ns at 125C while reverse-recovery time of 6.2 kW, a 44% reduction. of the SiC SBD is unchanged with temperature. Figure 14 shows the turn-off currents of the6 Si ultrafast diode and the SiC SBD at 25 and 125 superimposed on one plot. C C SBD 25C and 125C The SiC SBD SiCis @ unchanged with 4 temperature, with a peak reverse current of 2 1 amp. The Si ultrafast diode shows a strong temperature dependence, increasing 0 from 5 amps at 25 to 6 amps at 150 C C. The reverse recovery time of the Si ultrafast -2 diode increases from 100 nS at 25 to 148 C nS-4at 125 while reverse recovery time of C Si Ultrafast Diode the SiC SBD is unchanged@ 25C with -6 temperature. Si Ultrafast Diode @ 125C
8 I Diode (A) -8 -150 -100 -50 0 50 Time (ns) 100 150 200 250

-150

-100

-50

0 Time (ns)

50

100

150

200

Figure 5: 00-volt turn-on current of the Figure15: 1200 volt turn-on current of the IGBT w/ the Si with the Si and the SiC SBD at 25 and C IGBT Ultrafast diode Ultrafast diode and the 150 C. SiC SBD at 5C and 50C. A comparison of the switching parameters of the SiC SBD APPLICATION NOTE with the Si Ultrafast diode are shown for measurements takenCPWR-AN03, Rev A the of 25C in Table 3, and a junction A atcomparisontemperature of switching for measurements taken at a junction temperature of parameters of the SiC SBD with the Si 125C in Table 4. All measured parameters show a major ultrafast diode are shown for measurements improvement with the SiC SBD. The value of the SBD taken at a are effectively unchanged with C parameters junction temperature of 25 in increased Table 3, and for the Silicon Ultrafast diode parameters temperature while measurements taken at a increase. temperature of 125 in Table 4. All + Diode) junction The total switching-loss reduction (IGBT C is 51% at 25C and 58% at 125C. a major measured parameters show

switc watts to 10 125 C switc and temp IGBT in wa kHz and SBD

-2

w/ Si and

improvement with the SiC SBD. The value of the SBD parameters are effectively unchanged with increased temperature while the Silicon Ultrafast diode parameters increase. The total switching loss reduction (IGBT + Diode) is 51% at 25 and 58% at C 125 C.
Parameter Peak reverse current Reverse recovery time Recovery charge Diode loss turn-off Diode loss turn-on Diode loss total IGBT loss turn-on IGBT loss turn-off IGBT loss total loss total Ic = 5A, Vcc = 1000V, Rg = 22 ohm Units Si Pin SiC % Reduction Ipr (A) 5.5 1 82% Trr (nS) 100 30 70% Qrr (nC) 295 20 93% Eoff Diode (mJ) 0.08 0.02 75% Eon Diode (mJ) 0.03 0.02 33% Ets Diode (mJ) 0.11 0.04 64% Eon IGBT (mJ) 0.73 0.28 62% Eoff IGBT (mJ) 0.33 0.25 24% Ets IGBT (mJ) 1.06 0.53 50% Ets (mJ) 1.17 0.57 51%

ent a GBT

Figure 4: 00-volt turn-off current of the Figure 14: 1200 volt turn-off current of the Si Si Ultrafast diode and the SiC SBD at 5C Ultrafast diode and the SiC SBD at 25 and C and 5C.

125C.

Figure 15 shows the turn on currents of the IGBT with a Si ultrafast diode and the Table 3: 1200 volt switching parameter SiC SBD at 25 and 125 superimposed C C Cree, Inc. comparison between Si Ultrafast and SiC Silicon Drive 4600 on 2003-2006 Cree,TheAllpeakreserved. The informationIGBTdocument is subject to change without notice. Cree one plot. Inc. rights current in the in this Copyright Durham, NC 27703 SBD at 25C. and the with Cree logotheregistered trademarks of Cree, Inc. are USA Tel: +1.919.313.5300 SiC SBD is unchanged with Fax: +1.919.313.5778 www.cree.com/power Ic = 5A, Vcc = 1000V, Rg = 22 ohm 6 temperature. The peak current and reverse CPWR-AN03, Rev. B Parameter Units Si Pin SiC % Reduction recovery time of the IGBT with the Si
Peak reverse current Ipr (A) 6 1 83%

Page 6/9

IC = 5A, VCC = 1000V, Rg = 22 ohm Parameter Peak Reverse current Reverse recovery time Recovery Charge Diode loss turn-off Diode loss turn-on Diode loss total IGBT loss turn-on IGBT loss turn-off IGBT loss total loss total Units Ipr (A) Trr (nS) Qrr (nC) Eoff Diode (mJ) Eon Diode (mJ) Ets Diode (mJ) Eon IGBT (mJ) Eoff IGBT (mJ) Ets IGBT (mJ) Ets (mJ) Si Pin 5.5 100 295 0.08 0.03 0.11 0.73 0.33 1.06 1.17 SiC 1 30 20 0.02 0.02 0.04 0.28 0.25 0.53 0.57 % Reduction 82% 70% 93% 75% 33% 64% 62% 24% 50% 51%

20 20 Diode Switching Losses (watts) Diode Switching Losses (watts)

125C 125C 75C 75C 25C 25C

Si Ultrafast Diode Si Ultrafast Diode

15 15

10 10

5
SiC SBD SiC SBD

Table 3: 00-volt switching parameter comparison between Si Ultrafast and SiC SBD at 5C.
IC = 5A, VCC = 1000V, Rg = 22 ohm Parameter Peak Reverse current Reverse recovery time Recovery Charge Diode loss turn-off Diode loss turn-on Diode loss total IGBT loss turn-on IGBT loss turn-off IGBT loss total loss total Units Ipr (A) Trr (nS) Qrr (nC) Eoff Diode (mJ) Eon Diode (mJ) Ets Diode (mJ) Eon IGBT (mJ) Eoff IGBT (mJ) Ets IGBT (mJ) Ets (mJ) Si Pin 6 148 540 0.16 0.03 0.19 0.98 0.57 1.55 1.74 SiC 1 30 20 0.02 0.02 0.04 0.28 0.41 0.69 0.73 % Reduction 83% 80% 96% 88% 33% 79% 71% 28% 55% 58%

0 10 10

20 20

30 30

40 50 60 70 80 40 50 60 70 80 Switching Frequency (kHz) Switching Frequency (kHz)

90 90

100 100

75 and 125 C, C.
180 180 160 160 140 140 120 120 100 100 80 80 60 60 40 40 20 20 0 0 10 10 IGBT Switching Losses (watts) IGBT Switching Losses (watts)

Figure 6: 00-volt switching-power loss Figure 16: 1200 volt switching power loss of Figure 16: 1200 volt switching power loss of of Si Si Ultrafast diode and the SBD at thethe Ultrafast diode and the SBD at 25 C, the Si Ultrafast diode and the SBD at 25 C, 5C, 75C, and 75 and 125 5C. C, C.
Si Ultrafast Diode Si Ultrafast Diode

Figur Figure 1200 1200 v at 25 at 25 C

125C 125C 75C 75C 25C 25C

Table 4: 00-volt switching-parameter comparison between Si Ultrafast and SiC SBD at 5C. Figure 16 shows the total diode switching losses (turn-on and turn-off) in watts at switching frequencies from 10 kHz to 100 kHz for temperatures of 25, 75 and 125C. The SBD has significantly lower switching losses (up to a 79% reduction) and shows no change with increased temperature. Figure 17 shows the total IGBT switching losses (turn-on and turn-off) in watts at switching frequencies from 10 kHz to 100 kHz for temperatures of 25, 75 and 125C. IGBT switching loss with the SBD is about half that of the IGBT with the Si Ultrafast diode. The IGBT with the SBD also shows less increase in switching losses with temperature. The temperature dependence of the switching losses in the IGBT with the SBD is due to the increase in the IGBT turn-off time, since the turnon losses are unchanged with temperature. This dramatic improvement in the IGBT switching performance is due solely to the absence of reverse recovery in the SiC SBD.

SiC SBD SiC SBD

20 20

30 30

40 50 60 70 80 40 50 60 70 80 Switching Frequency (kHz) Switching Frequency (kHz)

90 90

100 100

Ta Tab losse losses a 50% a 50% 2.5 a 2.5 am devic device used. used. the d the da With With t reduc reduce are re are re loss loss r by sim by sim a SiC a SiC

Figure 7: 00-volt IGBT switching power 17: 1200 volt IGBT Figure Figure 17: 1200 volt IGBT switching-power switching power loss w/ the Si Ultrafast diode and the SBD at loss w/ the Ultrafast diode and the SBD at loss w/ the Si Si Ultrafast diode and the SBD 25 75 and and C. C, at C, 75 C,and 125 255C, 75C, 125 5C. C, C.

Conduction and Losses Conduction and TotalTotal Losses Conduction and Total Losses Table Table Figure 18 shows the forward IV of the a con Figure 18 shows the forward IV of the con Figure 18 showsSi ultrafast diode and the SiC Si Ultrafast adiode 1200 volt the forward IV of the 1200-volt SBD 1200 volt SiCultrafast25C and 125C. At 5 amps the diode Si SBD at diode and the SiC SBD diodeat 25 and 125 and the C C. At 5 amps the SiC SBD at 25 and 125 At lower forward drop at C C. SiC SBD diode has 0.75-volt 5 amps the SiC SBD 25C
and 0.18-volt lower forward drop at 125C. This results in reduced conduction losses for the SiC SBD.

CPWR-AN03, Rev A CPWR-AN03, Rev A

Copyright 2003-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.

CPWR-AN03, Rev. B

Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/power

Diode Forward Current (amp) Diode Forward Current (amp)

the IGBT turn-off time, since the turn-on the IGBT turn-off time, since the turn-on losses are unchanged with temperature. losses are unchanged with temperature. This dramatic improvement in the IGBT This dramatic improvement in the IGBT switching performance is due solely to the switching performance is due solely to the absence of reverse recovery in the SiC absence of reverse recovery in the SiC SBD. SBD.

6 6 5 5 4 4 3 3 2 2 1 1

0 0 0 0.0

Diode Diode Diode Diode c To Tota IGBT IGBT IGBT IGBT c To Tota T

APPLICATION NOTE
diode has 0.75 volt lower forward drop at 25 and 0.18 volt lower forward drop at C 125 This results in reduced conduction C. losses for the SiC SBD.
6

Diode Forward Current (amp)

SBD sses ature n the se in rn-on ature. GBT o the SiC

Conclusions
The turn-on switching losses of the IGBT are strongly dependent on the reverse-recovery characteristics of its freewheeling diode. The impact of the SiC SBD on the switching performance of the freewheeling diode and the IGBT is of great importance to the hard-switched circuit designer. Based on the measurements presented above, there are significant advantages offered by SiC Schottky diodes. While the reverse-recovery current of the Si Ultrafast diode shows a strong temperature dependence, the SiC SBD is unaffected. At a high di/dt, the Si Ultrafast diode exhibits a voltage overshoot on turn-off due to snapoff during reverse recovery, but the SiC SBD is unaffected. The snap-off in the Si Ultrafast diode causes oscillations in the IGBT voltage, which generate RFI/EMI. This oscillation is not present with the SiC SBD. The 50% reduction in switching losses can be applied in a number of ways to optimize the circuit design. The reduction in switching losses can be applied to increase efficiency, reduce cooling requirements, or reduce the current rating of the IGBT. The operating frequency can be increased in order to allow the use of smaller passive components or to achieve acoustic requirements. The absence of a voltage overshoot eliminates the need for snubber networks. The absence of the high-frequency oscillation reduces the RFI/EMI filter requirements. The replacement of the Si Ultrafast diode with a SiC Schottky diode such as the Cree Zero recovery SBD results in a substantial reduction in switching losses in both the diode and the IGBT, resulting in a significant system-level performance improvement.

125C

25C

SiC SBD
1

Si Ultrafast Diode
0 0.0
100

0.5

1.0

1.5

2.0

2.5

3.0

Diode Forward Voltage (volt)

ss of 25 C,

Figure 8: Forward voltage and current of Figure 18: Forward voltage and current of the the 00-volt Si Ultrafast diode and the SiC 1200 volt Si Ultrafast diode and the SiC SBD SBD at 5C and 5C. at 25 and 125C. C Table 5 Table the shows theof total losses of a 100-kHz shows 5 calculation calculation for total converter operating at a 50% duty cycle with an average losses for a 100 kHz converter operating at current50% duty cycle with an average currentA device a of 2.5 amps using the 1200-volt devices. of junction temperature of 125C was used. The conduction 2.5 amps using the 1200 volt devices. A loss for the IGBT is the data sheet value of 2.9 volts at 5 device junction temperature of 125 was C amps. With the SiC SBD, the total diode losses are reduced used. The conduction losses for the IGBTby 51%. loss are reduced is by 50% and the total IGBT This the data51% total lossof 2.9 volt for 5 amps. gives a sheet value reduction at the 1200-volt converter by simply changing the diode losses are to a With the SiC SBD, the total Si Ultrafast diode SiC SBD. reduced by 50% and the total IGBT losses

90

100

are reduced by 51%. This Pin SiC SBD % Reduction gives a 51%, total Si loss reduction for the 1200 volt4 converter Diode Switching loss (watt) 19 79% by simply changing the Si ultrafast diode to Diode conduction loss (watt) 12.5 11.7 6% a SiC SBD. Total Diode loss (watt) 31.5 15.7 50%
IGBT Switching loss (watt)

ower BD at

Si PiN SiC SBD % Reduction 155 69 55% Diode Switching loss (watt) 19 4 79% IGBT conduction loss (watt) 14.5 14.5 0% Diode conduction loss (watt) 12.5 11.7 6% Total IGBT loss (watt) loss (watt) 169.5 15.7 83.5 Total Diode 31.5 50% 51% 155 69 99.2 55% 51% Total lossIGBT Switching loss (watt) (watt) 201 IGBT conduction loss (watt) 14.5 14.5 0% Table 5: Comparison of169.5 calculated losses in a Total IGBT loss (watt) 83.5 51% 201 51% converterTotal lossthe 00-volt Si 99.2 with (watt) Ultrafast diode and

the SBD at 5C.

f the SBD SBD

Table 5: Comparison of calculated losses in a converter with the 1200 volt Si Ultrafast diode and the SBD at 125C.

Page 8/9

Copyright 2003-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.

CPWR-AN03, Rev. B

Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/power