ResonantSwitchingSeries

ReverseconductingIGBTwithmonolithicbodydiode

IHW30N110R3

Datasheet

IndustrialPowerControl
 IHW30N110R3
ResonantSwitchingSeries

ReverseconductingIGBTwithmonolithicbodydiode

Features: C

•Powerfulmonolithicbodydiodewithlowforwardvoltage
designedforsoftcommutationonly
•Verytightparameterdistribution
•Highruggedness,temperaturestablebehavior
•LowVCEsat G
•Easyparallelswitchingcapabilityduetopositivetemperature E
coefficientinVCEsat
•LowEMI
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/

Applications:
G
•Inductivecooking C
•Inverterizedmicrowaveovens E
•Resonantconverters
•Softswitchingapplications

KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package
IHW30N110R3 1100V 30A 1.55V 175°C H30R1103 PG-TO247-3

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TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

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ResonantSwitchingSeries

MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter Symbol Value Unit

Collector-emitter voltage VCE 1100 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C IC 60.0 A
TC=100°C 30.0
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 90.0 A
TurnoffsafeoperatingareaVCE≤1100V,Tvj≤175°C - 90.0 A
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C IF 60.0 A
TC=100°C 30.0
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 90.0 A
Gate-emitter voltage ±20
VGE V
TransientGate-emittervoltage(tp≤10µs,D<0.010) ±25
PowerdissipationTC=25°C 333.0
Ptot W
PowerdissipationTC=100°C 166.0
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+175 °C
Soldering temperature,
°C
wave soldering 1.6mm (0.063in.) from case for 10s 260
Mounting torque, M3 screw
M 0.6 Nm
Maximum of mounting processes: 3

ThermalResistance
Parameter Symbol Conditions Max.Value Unit
Characteristic
IGBT thermal resistance,
Rth(j-c) 0.45 K/W
junction - case
Diode thermal resistance,
Rth(j-c) 0.45 K/W
junction - case
Thermal resistance
Rth(j-a) 40 K/W
junction - ambient

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ResonantSwitchingSeries

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 1100 - - V
VGE=15.0V,IC=30.0A
Tvj=25°C - 1.55 1.75
Collector-emitter saturation voltage VCEsat V
Tvj=125°C - 1.85 -
Tvj=175°C - 2.00 -
VGE=0V,IF=30.0A
Tvj=25°C - 1.35 1.55
Diode forward voltage VF V
Tvj=125°C - 1.38 -
Tvj=175°C - 1.41 -
Gate-emitter threshold voltage VGE(th) IC=0.70mA,VCE=VGE 5.1 5.8 6.4 V
VCE=1100V,VGE=0V
Zero gate voltage collector current ICES Tvj=25°C - - 5.0 µA
Tvj=175°C - - 2500.0
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=30.0A - 15.0 - S
Integrated gate resistor rG none Ω

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
DynamicCharacteristic
Input capacitance Cies - 1460 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 55 - pF
Reverse transfer capacitance Cres - 45 -
VCC=880V,IC=30.0A,
Gate charge QG - 180.0 - nC
VGE=15V
Internal emitter inductance
measured 5mm (0.197 in.) from LE - 13.0 - nH
case

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=25°C
Turn-off delay time td(off) Tvj=25°C, - 350 - ns
Fall time tf VCC=600V,IC=30.0A, - 16 - ns
VGE=0.0/15.0V,
Turn-off energy Eoff RG(on)=15.0Ω,RG(off)=15.0Ω, - 1.15 - mJ
Lσ=80nH,Cσ=39pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.

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ResonantSwitchingSeries

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=175°C
Turn-off delay time td(off) Tvj=175°C, - 410 - ns
Fall time tf VCC=600V,IC=30.0A, - 60 - ns
VGE=0.0/15.0V,
Turn-off energy Eoff RG(on)=15.0Ω,RG(off)=15.0Ω, - 1.80 - mJ
Lσ=80nH,Cσ=39pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.

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ResonantSwitchingSeries

100 100

90

80
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
70
10 tp=1µs
TC=80°
60 10µs
TC=110°
20µs
50
50µs

40 500µs
1 5ms
30
DC
20

10

0 0.1
1 10 100 1000 1 10 100 1000
f,SWITCHINGFREQUENCY[kHz] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Collectorcurrentasafunctionofswitching Figure 2. Forwardbiassafeoperatingarea
frequency (D=0,TC=25°C,Tj≤175°C;VGE=15V)
(Tj≤175°C,D=0.5,VCE=600V,VGE=0/15V,
RG=15Ω)

350 60

300
IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]

250
40

200

150

20
100

50

0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C] TC,CASETEMPERATURE[°C]
Figure 3. Powerdissipationasafunctionofcase Figure 4. Collectorcurrentasafunctionofcase
temperature temperature
(Tj≤175°C) (VGE≥15V,Tj≤175°C)

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90 90

80 VGE=20V 80 VGE=20V

17V 17V
70 70
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
15V 15V

60 13V 60 13V

11V 11V
50 50
9V 9V

40 7V 40 7V

5V 5V
30 30

20 20

10 10

0 0
0 1 2 3 0 1 2 3 4
VCE,COLLECTOR-EMITTERVOLTAGE[V] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic Figure 6. Typicaloutputcharacteristic
(Tj=25°C) (Tj=175°C)

90
25°C IC=15A
Tj=175°C IC=30A
80
VCE(sat),COLLECTOR-EMITTERSATURATION[V]

IC=60A

3
70
IC,COLLECTORCURRENT[A]

60

50

40
2

30

20

10

0 1
4 6 8 10 12 14 25 50 75 100 125 150 175
VGE,GATE-EMITTERVOLTAGE[V] Tj,JUNCTIONTEMPERATURE[°C]
Figure 7. Typicaltransfercharacteristic Figure 8. Typicalcollector-emittersaturationvoltageas
(VCE=20V) afunctionofjunctiontemperature
(VGE=15V)

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ResonantSwitchingSeries

td(off) td(off)
tf tf
1000 1000
t,SWITCHINGTIMES[ns]

t,SWITCHINGTIMES[ns]
100 100

10 10
10 20 30 40 50 60 10 20 30 40 50
IC,COLLECTORCURRENT[A] RG,GATERESISTANCE[Ω]
Figure 9. Typicalswitchingtimesasafunctionof Figure 10. Typicalswitchingtimesasafunctionofgate
collectorcurrent resistance
(ind.load,Tj=175°C,VCE=600V,VGE=0/15V, (ind.load,Tj=175°C,VCE=600V,VGE=0/15V,
RG(on)=15Ω,RG(off)=15Ω,testcircuitinFig.E) IC=30A,testcircuitinFig.E)

8
td(off) typ.
1000 tf min.
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]

max.
7
t,SWITCHINGTIMES[ns]

6
100

4
10

1 2
25 50 75 100 125 150 175 25 50 75 100 125 150 175
Tj,JUNCTIONTEMPERATURE[°C] Tj,JUNCTIONTEMPERATURE[°C]
Figure 11. Typicalswitchingtimesasafunctionof Figure 12. Gate-emitterthresholdvoltageasafunction
junctiontemperature ofjunctiontemperature
(ind.load,VCE=600V,VGE=0/15V,IC=30A, (IC=0.7mA)
RG(on)=15Ω,RG(off)=15Ω,testcircuitinFig.E)
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4 3
Eoff Eoff
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]
3

0 0
0 15 30 45 60 10 20 30 40 50
IC,COLLECTORCURRENT[A] RG,GATERESISTANCE[Ω]
Figure 13. Typicalswitchingenergylossesasa Figure 14. Typicalswitchingenergylossesasa
functionofcollectorcurrent functionofgateresistance
(ind.load,Tj=175°C,VCE=600V,VGE=0/15V, (ind.load,Tj=175°C,VCE=600V,VGE=0/15V,
RG(on)=15Ω,RG(off)=15Ω,testcircuitinFig.E) test circuit in Fig. E)

2 2.2
Eoff Eoff
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]

2.0

1.8

1.6

1.4

0 1.2
25 50 75 100 125 150 175 300 400 500 600 700 800 900
Tj,JUNCTIONTEMPERATURE[°C] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa Figure 16. Typicalswitchingenergylossesasa
functionofjunctiontemperature functionofcollectoremittervoltage
(indload,VCE=600V,VGE=0/15V,IC=30A, (ind.load,Tj=175°C,VGE=0/15V,IC=30A,
RG(on)=15Ω,RG(off)=15Ω,testcircuitinFig.E) RG(on)=15Ω,RG(off)=15Ω,testcircuitinFig.E)
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ResonantSwitchingSeries

16
220V
880V
14
VGE,GATE-EMITTERVOLTAGE[V]

12 1000
Cies
Coes

C,CAPACITANCE[pF]
Cres
10

6 100

0 10
0 40 80 120 160 200 0 10 20 30
QGE,GATECHARGE[nC] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalgatecharge Figure 18. Typicalcapacitanceasafunctionof
(IC=30A) collector-emittervoltage
(VGE=0V,f=1MHz)

1 1
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]

ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]

D=0.5 D=0.5
0.2 0.2
0.1 0.1 0.1 0.1
0.05 0.05
0.02 0.02
0.01 0.01
single pulse single pulse

0.01 0.01

i: 1 2 3 4 i: 1 2 3 4
ri[K/W]: 4.5E-3 0.1058 0.152 0.1827 ri[K/W]: 4.5E-3 0.1058 0.152 0.1827
τi[s]: 9.8E-6 3.2E-4 2.9E-3 0.01487178 τi[s]: 9.8E-6 3.2E-4 2.9E-3 0.01487178

0.001 0.001
1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s] tp,PULSEWIDTH[s]
Figure 19. IGBTtransientthermalimpedance Figure 20. Diodetransientthermalimpedanceasa
(D=tp/T) functionofpulsewidth
(D=tp/T)

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ResonantSwitchingSeries

60 2
Tj=25°C IF=15A
Tj=175°C IF=30A
IF=60A
50

VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]

40

30

20

10

0 1
0 1 2 25 50 75 100 125 150 175
VF,FORWARDVOLTAGE[V] Tj,JUNCTIONTEMPERATURE[°C]
Figure 21. Typicaldiodeforwardcurrentasafunction Figure 22. Typicaldiodeforwardvoltageasafunction
offorwardvoltage ofjunctiontemperature

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ResonantSwitchingSeries

PG-TO247-3

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ResonantSwitchingSeries

VGE(t)
I,V
90% VGE
t rr = t a + t b
dIF/dt
Q rr = Q a + Q b

a b
10% VGE
t

IC(t) Qa Qb

dI

90% IC
90% IC

10% IC 10% IC
t
Figure C. Definition of diode switching
characteristics
VCE(t)

td(off) tf td(on) tr
t

Figure A.
VGE(t)
90% VGE
Figure D.

10% VGE
t

IC(t)

CC

2% IC
t

VCE(t) Figure E. Dynamic test circuit

Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
t2 t4
(only for ZVT switching)
E = VCE x IC x dt E = VCE x IC x d t
off on
t1 t3 2% VCE
t
t1 t2 t3 t4

Figure B.

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Revision History
IHW30N110R3

Revision: 2015-01-26, Rev. 2.1

Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2009-12-01 -
1.2 2011-01-21 Package drawing Rev. 05
1.3 2013-02-12 Layout change
2.1 2015-01-26 Final data sheet

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81726 München, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.

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Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
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endangered.

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