IGBT

ReverseconductingIGBT

IHW40N60R
ResonantSwitchingSeries

Datasheet

IndustrialPowerControl
 IHW40N60R
ResonantSwitchingSeries

ReverseconductingIGBT

Features: C

•Powerfulmonolithicbodydiodewithlowforwardvoltage
designedforsoftcommutationonly
•TRENCHSTOPTMtechnologyapplicationsoffers:
-verytightparameterdistribution
-highruggedness,temperaturestablebehavior G
-lowVCEsat E
-easyparallelswitchingcapabilityduetopositive
temperaturecoefficientinVCEsat
•LowEMI
•QualifiedaccordingtoJESD-022fortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/

Applications:
G
C
•Inductivecooking E
•Inverterizedmicrowaveovens
•Resonantconverters
•Softswitchingapplications

KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package
IHW40N60R 600V 40A 1.65V 175°C H40R60 PG-TO247-3

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ResonantSwitchingSeries

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

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 IHW40N60R
ResonantSwitchingSeries

MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter Symbol Value Unit

Collector-emittervoltage,Tvj≥25°C VCE 600 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C IC 80.0 A
TC=100°C 40.0
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 120.0 A
Turn off safe operating area
- 120.0 A
VCE≤600V,Tvj≤175°C,tp=1µs
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C IF 80.0 A
TC=100°C 40.0
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 120.0 A
Gate-emitter voltage VGE ±20 V
PowerdissipationTC=25°C 305.0
Ptot W
PowerdissipationTC=100°C 152.5
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
°C
wave soldering 1.6mm (0.063in.) from case for 10s 260
Mounting torque, M3 screw
M 0.6 Nm
Maximum of mounting processes: 3

ThermalResistance
Parameter Symbol Conditions Max.Value Unit
Characteristic
IGBT thermal resistance,
Rth(j-c) 0.49 K/W
junction - case
Diode thermal resistance,
Rth(j-c) 0.49 K/W
junction - case
Thermal resistance
Rth(j-a) 40 K/W
junction - ambient

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ResonantSwitchingSeries

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 600 - - V
VGE=15.0V,IC=40.0A
Collector-emitter saturation voltage VCEsat Tvj=25°C - 1.65 2.05 V
Tvj=175°C - 2.10 -
VGE=0V,IF=40.0A
Diode forward voltage VF Tvj=25°C - 1.65 2.05 V
Tvj=175°C - 1.90 -
Gate-emitter threshold voltage VGE(th) IC=0.58mA,VCE=VGE 4.1 4.9 5.7 V
VCE=600V,VGE=0V
Zero gate voltage collector current ICES Tvj=25°C - - 40.0 µA
Tvj=175°C - - 3000.0
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=40.0A - 19.0 - S
Integrated gate resistor rG none Ω

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
DynamicCharacteristic
Input capacitance Cies - 2370 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 80 - pF
Reverse transfer capacitance Cres - 65 -
VCC=480V,IC=40.0A,
Gate charge QG - 223.0 - nC
VGE=15V
Internal emitter inductance
measured 5mm (0.197 in.) from LE - 13.0 - nH
case

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=25°C
Turn-off delay time td(off) Tvj=25°C, - 193 - ns
Fall time tf VCC=400V,IC=40.0A, - 24 - ns
VGE=0.0/15.0V,
Turn-off energy Eoff RG(on)=5.6Ω,RG(off)=5.6Ω, - 0.75 - mJ
Lσ=90nH,Cσ=67pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.

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ResonantSwitchingSeries

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=175°C
Turn-off delay time td(off) Tvj=175°C, - 227 - ns
Fall time tf VCC=400V,IC=40.0A, - 44 - ns
VGE=0.0/15.0V,
Turn-off energy Eoff RG(on)=5.6Ω,RG(off)=5.6Ω, - 1.22 - mJ
Lσ=90nH,Cσ=67pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.

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 IHW40N60R
ResonantSwitchingSeries

140

100
120

tp=1µs
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
100 5µs
TC=80°
20µs
TC=110° 10
80 100µs

1ms
60 10ms

DC
1
40

20

0 0.1
10 100 1000 1E+4 1E+5 1E+6 1 10 100 1000
f,SWITCHINGFREQUENCY[Hz] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Collectorcurrentasafunctionofswitching Figure 2. Forwardbiassafeoperatingarea
frequency (D=0,TC=25°C,Tj≤175°C;VGE=15V)
(Tj≤175°C,D=0.5,VCE=400V,VGE=0/15V,
RG=5.6Ω)

350 80

70
300

60
IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]

250

50
200

40

150
30

100
20

50
10

0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C] TC,CASETEMPERATURE[°C]
Figure 3. Powerdissipationasafunctionofcase Figure 4. Collectorcurrentasafunctionofcase
temperature temperature
(Tj≤175°C) (VGE≥15V,Tj≤175°C)

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ResonantSwitchingSeries

120
VGE=20V VGE=20V

17V 17V
120
100
15V 15V

13V 13V
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
100
11V 80 11V

9V 9V
80
7V 7V
60

60

40
40

20
20

0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6
VCE,COLLECTOR-EMITTERVOLTAGE[V] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic Figure 6. Typicaloutputcharacteristic
(Tj=25°C) (Tj=175°C)

120 3.5
Tj=25°C IC=20A
Tj=175°C IC=40A
VCE(sat),COLLECTOR-EMITTERSATURATION[V]

IC=80A
100
3.0
IC,COLLECTORCURRENT[A]

80

2.5

60

2.0

40

1.5
20

0 1.0
0 2 4 6 8 10 12 0 25 50 75 100 125 150 175
VGE,GATE-EMITTERVOLTAGE[V] Tj,JUNCTIONTEMPERATURE[°C]
Figure 7. Typicaltransfercharacteristic Figure 8. Typicalcollector-emittersaturationvoltageas
(VCE=20V) afunctionofjunctiontemperature
(VGE=15V)

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ResonantSwitchingSeries

1000
td(off) td(off)
tf tf
1000
t,SWITCHINGTIMES[ns]

t,SWITCHINGTIMES[ns]
100

100

10 10
0 20 40 60 80 0 10 20 30 40 50
IC,COLLECTORCURRENT[A] RG,GATERESISTANCE[Ω]
Figure 9. Typicalswitchingtimesasafunctionof Figure 10. Typicalswitchingtimesasafunctionofgate
collectorcurrent resistance
(inductiveload,Tj=175°C,VCE=400V, (inductiveload,Tj=175°C,VCE=400V,
VGE=0/15V,RG(on)=5.6Ω,RG(off)=5.6Ω, VGE=0/15V,IC=40A,dynamictestcircuitin
dynamic test circuit in Figure E) Figure E)

1000 7
td(off) typ.
tf min.
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]

max.
6
t,SWITCHINGTIMES[ns]

100 4

10 1
25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
Tj,JUNCTIONTEMPERATURE[°C] Tj,JUNCTIONTEMPERATURE[°C]
Figure 11. Typicalswitchingtimesasafunctionof Figure 12. Gate-emitterthresholdvoltageasafunction
junctiontemperature ofjunctiontemperature
(inductiveload,VCE=400V,VGE=0/15V, (IC=0.58mA)
IC=40A,RG(on)=5.6Ω,RG(off)=5.6Ω,dynamic
test circuit in Figure E)
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ResonantSwitchingSeries

3.0 3.00
Eoff Eoff

2.75
2.5
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]
2.50

2.0
2.25

1.5 2.00

1.75
1.0

1.50

0.5
1.25

0.0 1.00
0 10 20 30 40 50 60 70 80 0 10 20 30 40 50
IC,COLLECTORCURRENT[A] RG,GATERESISTANCE[Ω]
Figure 13. Typicalswitchingenergylossesasa Figure 14. Typicalswitchingenergylossesasa
functionofcollectorcurrent functionofgateresistance
(inductiveload,Tj=175°C,VCE=400V, (inductiveload,Tj=175°C,VCE=400V,
VGE=0/15V,RG(on)=5.6Ω,RG(off)=5.6Ω, VGE=0/15V,dynamictestcircuitinFigureE)
dynamic test circuit in Figure E)

1.50 2.0
Eoff
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]

1.6
Eon*
1.25

1.2

1.00

0.8

0.75
0.4

0.50 0.0
25 50 75 100 125 150 175 300 400
Tj,JUNCTIONTEMPERATURE[°C] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa Figure 16. Typicalswitchingenergylossesasa
functionofjunctiontemperature functionofcollectoremittervoltage
(inductiveload,VCE=400V,VGE=0/15V, (inductiveload,Tj=175°C,VGE=0/15V,
IC=40A,RG(on)=5.6Ω,RG(off)=5.6Ω,dynamic IC=40A,RG(on)=5.6Ω,RG(off)=5.6Ω,dynamic
test circuit in Figure E) test circuit in Figure E)
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 IHW40N60R
ResonantSwitchingSeries

16
120V
480V
14
VGE,GATE-EMITTERVOLTAGE[V]

Cies
12 1000 Coes
Cres

C,CAPACITANCE[pF]
10

6 100

0 10
0 50 100 150 200 250 0 10 20 30
QGE,GATECHARGE[nC] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalgatecharge Figure 18. Typicalcapacitanceasafunctionof
(IC=40A) collector-emittervoltage
(VGE=0V,f=1MHz)

1 1
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]

ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]

0.1 D=0.5 0.1 D=0.5

0.2 0.2
0.1 0.1
0.05 0.05
0.02 0.02
0.01 0.01
single pulse single pulse

0.01 0.01

i: 1 2 3 4 i: 1 2 3 4
ri[K/W]: 0.0655 0.1301 0.1899 0.1045 ri[K/W]: 0.0655 0.1301 0.1899 0.1045
τi[s]: 1.4E-4 1.0E-3 0.01054274 0.07949796 τi[s]: 1.4E-4 1.0E-3 0.01054274 0.07949796

0.001 0.001
1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s] tp,PULSEWIDTH[s]
Figure 19. IGBTtransientthermalimpedance Figure 20. Diodetransientthermalimpedanceasa
(D=tp/T) functionofpulsewidth
(D=tp/T)

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ResonantSwitchingSeries

120 3.00
Tj=25°C IF=20A
Tj=175°C IF=40A
2.75 IF=80A
100

2.50

VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]

80
2.25

60 2.00

1.75
40

1.50

20
1.25

0 1.00
0 1 2 3 4 0 25 50 75 100 125 150 175
VF,FORWARDVOLTAGE[V] Tj,JUNCTIONTEMPERATURE[°C]
Figure 21. Typicaldiodeforwardcurrentasafunction Figure 22. Typicaldiodeforwardvoltageasafunction
offorwardvoltage ofjunctiontemperature

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ResonantSwitchingSeries

PG-TO247-3

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ResonantSwitchingSeries

VGE(t)
I,V
90% VGE
t rr = t a + t b
dIF/dt
Q rr = Q a + Q b

a b
10% VGE
t

IC(t) Qa Qb

dI

90% IC
90% IC

10% IC 10% IC
t
Figure C. Definition of diode switching
characteristics
VCE(t)

td(off) tf td(on) tr
t

Figure A.
VGE(t)
90% VGE
Figure D.

10% VGE
t

IC(t)

CC

2% IC
t

VCE(t) Figure E. Dynamic test circuit

Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
t2 t4
(only for ZVT switching)
E = VCE x IC x dt E = VCE x IC x d t
off on
t1 t3 2% VCE
t
t1 t2 t3 t4

Figure B.

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 IHW40N60R
Resonant Switching Series

Revision History
IHW40N60R

Revision: 2015-01-26, Rev. 2.6

Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2007-10-26 -
2.2 2008-07-29 -
2.3 2011-08-03 -
2.4 2013-12-10 New value ICES max limit at 175°C
2.5 2014-03-12 Storage temp -55...+150°C
2.6 2015-01-26 Minor changes

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Published by
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81726 München, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.

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Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life
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and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.

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