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Si Atomic Structure
Electron Configuration:
Doping Process
Doping: The process of adding impurities to the intrinsic material
giving the material a Positive or Negative characteristic.
N
SI
SI
SI
SI
SI
SI
N
SI
SI
SI
SI
SI
SI
SI
SI
SI
SI
SI
SI
P
SI
SI
SI
SI
SI
SI
SI
SI
SI
SI
Covalent
Bonding;
Pentavalent
Doping;
Trivalent Doping;
Undoped Material
Shares its 4 electrons
w/other atoms and
forms a pure crystal.
Donor Material
Acceptor Material
n-type material
N
SI
N
SI
SI
SI
N
SI
SI
N
SI
SI
SI
SI
SI
SI
SI
N
SI
SI
SI
N
SI
SI
p-type material
P
SI
SI
P
SI
SI
SI
P
SI
SI
SI
SI
SI
SI
SI
P
SI
SI
SI
P
SI
SI
SI
I
P
Remember
Majority Current Carriers, Holes or
Electrons.
Electrons
N Type Material:
Material
covalent
charge.
P Type Material:
Material
covalent
charge.
2 Current Carriers:
Carriers
Depletion region
anode
anode
FORWARD
BIASED
REVERSED
BIASED
-Depletion
+
Region
Depletion
+
Region
Depletion
-Region
-
+
+
Region
I
+
+
+
+
+
+
+
+
+
Depletion Region
Zero bias conditions
p more heavily doped
than n (NA > NB)
Electric field gives rise
to potential difference in
the junction, known as
the built-in potential
hole diffusion
electron diffusion
p
n
hole drift
electron drift
Charge
Density
x
Distance
Electrical
Field
Potential
-W 1
W2
(d) Electrostatic
potential.
Built-in Potential
N AND
0 T ln
2
n
i
kT
T
26mV (at 300 K )
q
ni is the intrinsic carrier concentration for
1
1
16
,
N
10
,
B
3
3
cm
cm
15
pure Si (1.5 X 10 cm at 300K), so for N A 10
10
0 26 ln
-3
10151016
10 2
1.5 *10
mV 638mV
ID = IS(eV D/T 1)
VD
+
+
VD
ID
VDon
Diffusion coefficient
minority carrier concentration
ID = IS(eV D/T 1)
Dn=25 cm2/sec
q=1.6*10-19 coulombs
Dp=10cm2/sec
pn0=0.3*10 /cm
Wn=5 m
np0=0.6*104/cm3
Wp=0.7 m
W2=0.15 m
W1=0.03 m
D p
D n
I S qAD ( WnpWn 02 W pn Wp 01 )
typical value
I S 10 17 A / m 2
Two types
Avalanche breakdown
ID (A)
Above mechanism
Zener breakdown
More complicated
0.1
25.0
15.0
5.0
VD (V)
5.0
I D I S (eVD /nT 1)
RS
+
VD
-
ID
CD