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Epileds Technologies, Inc.

- A professional LED chips company you can trust

InGaN LED

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- (LED, Light Emitting Diode):

A Light Emitting Diode (LED) semiconductor device which converts electricity to light

- (Diode): p n , p-n (junction)

-p(n) (p- n- type semiconductor):

- (Semiconductor): ,
III V , III-V

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( )

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InGaN LED

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( )-

=1.24/Eg

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Forward Voltage vs. Bandgap Energy

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Curve for LED Diode

Band Diagram
Ec

Conduction
Band
Ec

Light emitting
donor

acceptor
Ev

-V
Ev

Valence
Band

+V

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InGaN LED ---

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InGaN LED Chip Structure

TYPE :ER- B1212E (for Blue)

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EPI-WAFER
(MOCVD)

InGaN LED Chip

FAB PROCESS
-Anneal
-Photolithography
-Metallization
-Dry & Wet etching
-Visual Inspection

1% Wafer
Probing
Test

Lapping &
Polishing

Scribing &
Breaking

QA Testing

OQC &
Delivery

Counting &
Package

Visual
Inspection

Chip Sorting

100% Chip
Probing
Test

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(EPITAXY)

Substrate

Epi-Wafer

EPITAXY

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, ,

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(MOVPE)

MOVPE (Metal Organic Vapor Phase Epitaxy):

,

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PL

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(Wafer Process)

Epi-Wafer

Wafer Process

, , (chip)
,

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(GaN Blue LED)

p-GaN

p-GaN

p-GaN

p-GaN

p-GaN

n-GaN

n-GaN

n-GaN

n-GaN

n-GaN

Sapphire

Sapphire

Sapphire

Sapphire

Sapphire

Wet Etching:
HNO3/KI Solution

Dry Etching:
Depth = 1um

Anneal : 750 C,20min,N2

TCL Deposition:
Ni(5nm)/Au(5nm)

Photolithography I :
Mask : Mesa

p-GaN

p-GaN

p-GaN

p-GaN

p-GaN

n-GaN

n-GaN

n-GaN

n-GaN

n-GaN

Sapphire

Sapphire

Photoresist Strip :

Heat Treatment:
400 C,10min,Air

p-GaN

p-GaN

n-GaN

n-GaN
Sapphire

Passivation Layer Deposition:

SiO2 (100nm)

Sapphire
Lift-Off :
Aceton

Sapphire
Bonding Pad Deposition:
Ti(0.1um)/Al(2um)

Sapphire
Photolithography II :
Mask : Bonding Pad

Sapphire
Wet Etching :
HF/H3PO4

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/ /
(Etching) :
,

(Deposition) :
,

(Photolithography) :
,
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(METAL)

ITO

ICP ( ) (N-GAN EXPOSED)

,
,

PECVD ( )(SiO2)
,
:SiH4

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PECVD

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boat

( )

5 10 5 torr
1 10 7 torr

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(E-beam gun) E-gun

-
-
-
- ( )

11

-
-
-

12

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(Inductively Coupled Plasma)
ICP RF , ,
(RF POWER), ,
, ,

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, ,
, ,
, ,

RF

RF

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(Coat)
(95 )

, Wafer

(Exprose)

.
, , .
, , .

(100~140)

, ,
, .

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Photolithography

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(Polymer)
,
, , ,

Nitrene
(swelling)

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UV

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4~7%

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( ) ,

(plasma etching)
(physical bomboard) (active
radical) ( ) (chemical reaction)

(1) (sputter etching) (2)

(ion beam etching)
(plasma etching)
(reactive ion etching
RIE)
(anisotropic etching)
(directional properties) (selectivity)

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Mesa

ITO
~2800A or
5600A

Pad

ICP

ITO

SiO2

ICP

ITO
& PR

Anneal clean &

Anneal 500

P/N pad

SiO2

Lift-off

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(Probing Test)

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(probing system),
(Optical and Electrical Characteristics) , (ESD Test)
, ,

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InGaN LED ---

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wafer process

CWT

COW

NG

OK

C O W
chip on wafer

COW

(
)
Reflector

COT

C O T
chip on tape

(
)

COT

PI

COT

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(Grinding & Polishing)

(Grinding)
,
,

(Polishing)
,

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: Sapphire

EPILEDS (Scribing & Breaking)

(Laser Scribing)
,

(Breaking)
, ,

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(1) LOP ( )

LOP factor

(2) WLD ( )

IV-Gain

detector

LOP ( mcd,mW)

p
CIE

WLD
(3)

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mapping
data

( ) ( ) ( )
wafer MAPPING

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(QA Testing)

(Bonding Test)
,,
Bonding Pad
(Reliability Test)
,

(ESD Test)
,

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COT

C O T M
chip on ring

bin

COTM

PSV

AOI

AOI

IPQC

Scanner
Sorter

IPQC

Sorter

sorter

PI

sorter
PI

counter
PSV

counter

PSV

PSV

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(Chip Sorting)

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,
( : , , ) , (SORTER

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(Visual Inspection)

TCL
N-pad

P-pad
Mesa

Lead

(Optical Microscope),
,

Chip size

Tape

<1/4

< 10

<1/5

<1/5

Pad

1.
2.pad :<1/5pad
3.pad :<1/3 pad

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, , (Count,Label,Package)
(Counting)
,
(Labeling)
(Bar Code)
,

(Package)
,

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Thank you----