ELECTRONICS DEVICE

Reading Material
Primary Text :
Semiconductor Device Fundamentals : R. F. Pierret
(Addison Wesley, 1996)
Semiconductor Integrated Circuit Processing
Technology : Runyan, Bean (Addison Wesley,
1996)
References Text:
Solid State Electronic Devices 4th Edition: B. G.
Stretman, S. Banerjee (Prentice Hall, 2000)
Device Electronics for Integrated Circuits 3rd
Edition: R. Muller, T. Kamins (Wiley & Sons, 2003)

2
 Electronic Device Team
1. Course : Electronics Device

2. Courses Objective :

Mastering in basic concept of integrated-circuit operation devices

specially in silicon-integrated circuits and its Processing Technology

3. Grading (%) :

3
 Pre Test
1. What do you know about insulator,
conductor, semiconductor?
2. What is the different between unipolar
device and bipolar device?
3. What do you know about MOSFET?

10 Minutes Only

4
 Course Organization

Semiconductor Physics; PN-Junction

Metal-Semiconductor Contact

Bipolar Junction Transistor

IC Processing MOSFET

5
 Overview of IC Devices and
Semiconductor Fundamentals

6
Applications of Semiconductor
Devices

MOSFET
gate
source drain

Semiconductor
Devices
n+ n+
p - Si

7
 Evolution of Bipolar Junction Transistors

Point Contact BJT

1947
SiGe BJT
2000 Si Nanowire BJT
2003

8
Today and Tomorrow

9
 State-of-the-art Transistor Size

1m = 10-6m = 10-4 cm = 1000 nm

1 nm =10

10
 Advantages of Technology Scaling
More dies per wafer, lower cost
Higher-speed devices and circuits

11
Roadmap of Transistor

12
13
14
 Moore Law (Gordon Moore 1965)

The number of transistors in a

chip will be doubled every 18
months

15
Bulk Si Wafer to IC Chip

16
CZ (Czochralski) Crystal Growth

17
18
 History

1904 Vacuum Tube

1925 Concept of Field Effect Transistor
1947 Bipolar Transistor
1958 Bipolar IC
1959 MOS Transistor
1961 IC-MOS Technology
1972 MOS Microprocessor

19
 Conductivity in Solid
Resistivity [ cm]
1018 108 10-3 10-8
Glass Ag
Pure
Si
Diamond
Cu
GaAs
Quartz Al
10-18 10-8 103 108
Conductivity [ cm] -1
Insulators Semiconductors Conductors

20
 Semiconductors
Elemental Semiconductor
Si, Ge
Compound Semiconductor
GaAs - Gallium arsenide
GaP - Gallium phosphide
AlAs - Aluminum arsenide
AlP - Aluminum phosphide
InP - Indium Phosphide
ZnO Zinc Oxide
CdSe Cadmium selenide
Etc.
Alloys
Si1-xGex, AlxGa1-xAs

21
22
Important Unit Cells

23
 Crystallographic Planes and Si
Wafers

Silicon wafers are usually cut along the (100)

plane with a flat or notch to orient the wafer
during IC fabrication

24
Miller Indices
Crystallographic Notation

h: inverse x-intercept
k: inverse y-intercept
l: inverse z-intercept
(Intercept values are in multiples of the lattice constant;
h, k and l are reduced to 3 integers having the same
ratio.)

25
Crystallographic Planes

26
Si (100)

27
Si (111)

28
Si (100) and Si (110)

29
Si (100) and Si (110)

30
 Silicon Atom
1s, 2s, 2p orbitals filled by 10
4 nearest neighbors
electrons
unit cell length = 5.43
3s, 3p orbitals filled by 4 5 1022 atoms/cm3
electrons
The Si Atom The Si Crystal

diamond cubic structure

31
Bohr Model

32
33
 Conduction Band and Valence Band

Electron
Potential
Energy

34
The Simplified Energy Band
Diagram

35
 Semiconductors, Insulators, and
Conductors

Totally filled band and totally empty bands do not allow

current flow. (just as there is no motion of liquid in a
totally filled or totally empty bottle
Metal conduction band is half-filled
Semiconductors have lower Egs than insulators and
can be doped

36
Density of States

37
Density of States at Conduction Band:
The Greek Theater Analogy

38
 Concept of a hole
An unoccupied electronic state in
the valence band is called a hole
Treat as positively charge mobile particle in the semiconductors

39
Bond Model of Electrons and Holes

40
Electrons and Holes

41