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    Module 2 discusses excess carriers in semiconductors. It introduces the concepts of excess electrons and holes, which are additional carriers generated through photo generation beyond the normal thermal-equilibrium concentrations. The module also covers different recombination mechanisms for excess carriers, including direct and indirect band-to-band recombination, Auger recombination, and trap-aided Auger recombination. Additionally, it introduces the concept of quasi-Fermi levels to describe the distribution of excess carriers.

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    Module 2 discusses excess carriers in semiconductors. It introduces the concepts of excess electrons and holes, which are additional carriers generated through photo generation beyond the normal thermal-equilibrium concentrations. The module also covers different recombination mechanisms for excess carriers, including direct and indirect band-to-band recombination, Auger recombination, and trap-aided Auger recombination. Additionally, it introduces the concept of quasi-Fermi levels to describe the distribution of excess carriers.

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    51 views18 pages

    Module 2 SSD

    Uploaded by

    hima
    Module 2 discusses excess carriers in semiconductors. It introduces the concepts of excess electrons and holes, which are additional carriers generated through photo generation beyond the normal thermal-equilibrium concentrations. The module also covers different recombination mechanisms for excess carriers, including direct and indirect band-to-band recombination, Auger recombination, and trap-aided Auger recombination. Additionally, it introduces the concept of quasi-Fermi levels to describe the distribution of excess carriers.

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    © All Rights Reserved
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    Module 2

    Excess Carriers in Semiconductors


    Photo generation

    n0, p0------- Thermal-equilibrium electron and hole concentrations


    (independent of time and also usually position)
    n, p---- Total electron and hole concentrations (may be functions
    of time and/or position)
    δn, δp --Excess electron and hole concentrations
    Recombination mehanisms

     Direct band to band recombination


    Indirect recombination

     Via deep energy levels in the band


    Auger recombination
    Trap-aided auger recombination
    Excess Carrier Generation and
    Recombination
     The additional electrons and holes created are called excess electrons and
    excess holes.
    Quasi –Fermi levels

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