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Kristin Ackerson, Virginia Tech EE Spring 2002
Kristin Ackerson, Virginia Tech EE Spring 2002
Spring 2002
Table of Contents
What are diodes made out of?____________________slide 3
N-type material_________________________________slide 4
P-type material_________________________________slide 5
The pn junction_________________________________slides 6-7
The biased pn junction___________________________slides 8-9
Properties of diodes_____________________________slides 10-11
Diode Circuit Models ____________________________slides 12-16
The Q Point____________________________________slides 17-18
Dynamic Resistance_____________________________slides 19-20
Types of diodes and their uses ___________________ slides 21-24
Sources_______________________________________slide 25
Metallurgical
Junction
Na Nd
- - - - - - + + + + +
+
- - - - - -
P - - - - - -
+ + + +
+
+
n
- - - - - - + + + + +
- - - - - - +
+ +
Space Charge + + +
+
ionized Region ionized
acceptors + + + + + donors
+
E-Field
_ _
+ +
h+ drift = h+ diffusion e- diffusion = e- drift
Kristin Ackerson, Virginia Tech EE
Spring 2002
The PN Junction
Metallurgical
Steady State
Na Junction Nd
- - - - - + + + + +
When no external source
P + + + + + is connected to the pn
n
- - - - -
+ + + + + junction, diffusion and
- - - - -
+ +
Space Charge
+ + +
drift balance each other
ionized
acceptors - - - - -
Region ionized out for both the holes
donors
E-Field and electrons
_ _
+ +
h+ drift == h+ diffusion e- diffusion == e- drift
Space Charge Region: Also called the depletion region. This region
includes the net positively and negatively charged regions. The space
charge region does not have any free carriers. The width of the space charge
region is denoted by W in pn junction formula’s.
Metallurgical Junction: The interface where the p- and n-type materials meet.
Na & Nd: Represent the amount of negative and positive doping in number of
carriers per centimeter cubed. Usually in the range of 1015 to 1020.
Kristin Ackerson, Virginia Tech EE
Spring 2002
The Biased PN Junction
Metal
Contact
“Ohmic
_
Contact” +
(Rs~0)
Applied
P Electric Field n
_
+
Vapplied
The pn junction is considered biased when an external voltage is applied.
There are two types of biasing: Forward bias and Reverse bias.
These are described on then next slide.
Kristin Ackerson, Virginia Tech EE
Spring 2002
The Biased PN Junction
(nA)
Kristin Ackerson, Virginia Tech EE
Spring 2002
Properties of Diodes
The Shockley Equation
• The transconductance curve on the previous slide is characterized by
the following equation:
ID = IS(eVD/VT – 1)
• As described in the last slide, ID is the current through the diode, IS is
the saturation current and VD is the applied biasing voltage.
• VT is the thermal equivalent voltage and is approximately 26 mV at room
temperature. The equation to find VT at various temperatures is:
VT = kT
q
k = 1.38 x 10-23 J/K T = temperature in Kelvin q = 1.6 x 10-19 C
is the emission coefficient for the diode. It is determined by the way
the diode is constructed. It somewhat varies with diode current. For a
silicon diode is around 2 for low currents and goes down to about 1 at
higher currents Kristin Ackerson, Virginia Tech EE
Spring 2002
Properties of Diodes
Example: Assume the diode in the circuit below is ideal. Determine the
value of ID if a) VA = 5 volts (forward bias) and b) VA = -5 volts (reverse
bias)
RS = 50 a) With VA > 0 the diode is in forward bias
and is acting like a perfect conductor so:
ID ID = VA/RS = 5 V / 50 = 100 mA
+
VA b) With VA < 0 the diode is in reverse bias
_ and is acting like a perfect insulator,
therefore no current can flow and ID = 0.
Kristin Ackerson, Virginia Tech EE
Spring 2002
Diode Circuit Models
The Ideal Diode with This model is more accurate than the simple
Barrier Potential ideal diode model because it includes the
approximate barrier potential voltage.
+ Remember the barrier potential voltage is the
V voltage at which appreciable current starts to
flow.
Example: To be more accurate than just using the ideal diode model
include the barrier potential. Assume V = 0.3 volts (typical for a
germanium diode) Determine the value of ID if VA = 5 volts (forward bias).
RS = 50
With VA > 0 the diode is in forward bias
and is acting like a perfect conductor
ID so write a KVL equation to find ID:
+
VA 0 = VA – IDRS - V
_ +
V ID = VA - V = 4.7 V = 94 mA
RS 50
Kristin Ackerson, Virginia Tech EE
Spring 2002
Diode Circuit Models
The Ideal Diode This model is the most accurate of the three. It includes a
with Barrier linear forward resistance that is calculated from the slope of
the linear portion of the transconductance curve. However,
Potential and this is usually not necessary since the RF (forward
Linear Forward resistance) value is pretty constant. For low-power
Resistance germanium and silicon diodes the RF value is usually in the
2 to 5 ohms range, while higher power diodes have a RF
value closer to 1 ohm.
+
ID
V RF Linear Portion of
transconductance
curve
RF = VD ID
I D
VD
V D
Kristin Ackerson, Virginia Tech EE
Spring 2002
Diode Circuit Models
The Ideal Diode Example: Assume the diode is a low-power diode
with Barrier with a forward resistance value of 5 ohms. The
Potential and barrier potential voltage is still: V = 0.3 volts (typical
Linear Forward for a germanium diode) Determine the value of ID if
Resistance VA = 5 volts.
RS = 50
Ideal Diode
Ideal Diode
Model with
Model with
Ideal Diode Barrier
Barrier
Model Potential and
Potential
Linear Forward
Voltage
Resistance
ID 100 mA 94 mA 85.5 mA
VD (Volts)
0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.7
Kristin Ackerson, Virginia Tech EE
Spring 2002
Capacitance and Voltage of PN
Junctions
A K P n
Schematic Symbol for a PN Representative Structure for
Junction Diode a PN Junction Diode
A K
Schematic Symbol for a
Zener Diode
Kristin Ackerson, Virginia Tech EE
Spring 2002
Types of Diodes and Their Uses
A K
Schematic Symbol for a
four-layer Shockley Diode